| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SS25S-E3/5AT | VISHAY |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 50V; 2A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A |
Produkt ist nicht verfügbar |
|||||||||||
| SS25S-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A |
Produkt ist nicht verfügbar |
||||||||||||
 |
DG442DJ-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; -15÷15V; tube Type of integrated circuit: analog switch Case: DIP16 Number of channels: 4 Supply voltage: -15...15V Mounting: THT Kind of package: tube Resistance: 100Ω Output configuration: SPST-NO |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DG444DJ-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NC; Ch: 4; DIP16; 5÷20V,5÷36V; tube Type of integrated circuit: analog switch Case: DIP16 Number of channels: 4 Supply voltage: 5...36V; 5...20V Mounting: THT Kind of package: tube Resistance: 50Ω Output configuration: SPST-NC |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
DG445DJ-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 5÷20V,5÷36V; tube Supply voltage: 5...20V; 5...36V Type of integrated circuit: analog switch Number of channels: 4 Kind of package: tube Output configuration: SPST-NO Mounting: THT Case: DIP16 Resistance: 50Ω |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
GSC00AB2R21HARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 2.2uF; 50VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 2.2µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 4x5.7mm Height: 5.7mm |
auf Bestellung 3770 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
TS53YJ204MR10 | VISHAY |
Category: Single turn SMD trimmers Description: Potentiometer: mounting; single turn; 200kΩ; 250mW; SMD; ±20% Mounting: SMD Resistance: 200kΩ Power: 0.25W Tolerance: ±20% Max. operating voltage: 200V Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C IP rating: IP67 Type of potentiometer: mounting Characteristics: linear Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1,5Ncm Track material: cermet Kind of potentiometer: single turn |
Produkt ist nicht verfügbar |
|||||||||||
| AC04000001501JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 1.5kΩ; 4W; ±5%; Ø5.5x16.5mm; axial Conform to the norm: AEC Q200 Resistance: 1.5kΩ Tolerance: ±5% Body dimensions: Ø5.5x16.5mm Leads: axial Mounting: THT Type of resistor: wire-wound Power: 4W |
Produkt ist nicht verfügbar |
||||||||||||
 |
RCA06031K50FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 1.5kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 1.5kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
|||||||||||
 |
RCA12061K50FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 1.5kΩ; 250mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 1.5kΩ Tolerance: ±1% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Temperature coefficient: 100ppm/°C Case - inch: 1206 Case - mm: 3216 Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
|||||||||||
| SIHL510STRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 18A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
| GSC00AE1011AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 100uF; 10VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 100µF Operating voltage: 10V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 8x6.5mm Height: 6.5mm |
Produkt ist nicht verfügbar |
||||||||||||
 |
MAL202134101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø4.5x10mm; ±20%; 2500h Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 10V DC Body dimensions: Ø4.5x10mm Tolerance: ±20% Leads: axial Service life: 2500h Operating temperature: -40...85°C |
auf Bestellung 504 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| SIR418DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 70A Power dissipation: 39W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
 |
ILD1 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 50V Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 7.5%@10mA Collector-emitter voltage: 50V Case: DIP8 Turn-on time: 8.6µs Turn-off time: 1.6µs |
auf Bestellung 503 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| ILD1206T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 3333V; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 3333V CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: SOIC8 Conform to the norm: UL; VDE Turn-on time: 5µs Turn-off time: 4µs Max. off-state voltage: 6V Manufacturer series: IL120XT |
Produkt ist nicht verfügbar |
||||||||||||
| ILD1207T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 3333V; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 3333V CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SOIC8 Conform to the norm: UL; VDE Turn-on time: 5µs Turn-off time: 4µs Max. off-state voltage: 6V Manufacturer series: IL120XT |
Produkt ist nicht verfügbar |
||||||||||||
 |
SS2H10-E3/52T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.79V Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A |
auf Bestellung 687 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| SS2H10-E3/5BT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A |
Produkt ist nicht verfügbar |
||||||||||||
| SS2H10-M3/52T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A |
Produkt ist nicht verfügbar |
||||||||||||
| SS2H10-M3/5BT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A |
Produkt ist nicht verfügbar |
||||||||||||
| SS2H10HE3_A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||
| SS2H10HE3_A/I | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||
| SS2H10HM3_A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||
| SS2H10HM3_A/I | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Max. forward impulse current: 75A Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||
| SQJ158EP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Power dissipation: 45W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
| SQJ402EP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
| SQJ443EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -23A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
 |
SQJ465EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2875 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| SQJ858AEP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
 |
SI4128DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.7A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
SI4134DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.2A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.2A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 7442 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
SI4174DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13.5A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.5A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2102 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
SI4686DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; 3.3W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.5A Power dissipation: 3.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1261 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
BZX384C36-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 36V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
|||||||||||
|
|
BZX384C7V5-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
|||||||||||
 |
CRCW08052K37FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 2.37kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 2.37kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 11400 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
CRCW08052R37FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 2.37Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 2.37Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
|||||||||||
 |
PR03000203609JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 36Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 36Ω Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
|||||||||||
 |
SMCJ18A-E3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 20V; 51.4A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 51.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
auf Bestellung 1030 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
RCA0805390RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 390Ω; 125mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 390Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
|||||||||||
|
|
RCA0805680RFHEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 680Ω; 125mW; ±1%; -55÷155°C; 50ppm/°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 680Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
|||||||||||
 |
BZX55C68-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 68V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 68V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
RCA0402100RFKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0402; 100Ω; 63mW; ±1%; -55÷155°C; 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC Q200 Max. operating voltage: 50V Temperature coefficient: 100ppm/°C Tolerance: ±1% Resistance: 100Ω Power: 63mW Type of resistor: thick film Case - mm: 1005 Case - inch: 0402 |
Produkt ist nicht verfügbar |
|||||||||||
 |
VJ1812Y223KXETW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 500V; X7R; ±10%; SMD; 1812 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 500V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||
 |
VJ1206Y223KXETW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 22nF; 500V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 22nF Operating voltage: 500V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||
| SIRA14BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 52A Pulsed drain current: 130A Power dissipation: 23W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 7.02mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
 |
VS-HFA30PB120PBF | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 120A; TO247AC; 47ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO247AC Max. forward voltage: 2.3V Reverse recovery time: 47ns |
Produkt ist nicht verfügbar |
|||||||||||
|
|
RCA0805470KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 470kΩ; 125mW; ±1%; -55÷155°C; 100ppm/°C Resistance: 470kΩ Tolerance: ±1% Power: 0.125W Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Max. operating voltage: 150V Conform to the norm: AEC Q200 Type of resistor: thick film Case - mm: 2012 Case - inch: 0805 |
Produkt ist nicht verfügbar |
|||||||||||
|
|
CRCW0805470KJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 470kΩ; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 470kΩ Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
|||||||||||
 |
P6SMB62A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
|||||||||||
|
|
P6SMB62A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
|||||||||||
|
|
P6SMB62A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
|||||||||||
|
|
P6SMB62A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
|||||||||||
|
|
P6SMB62CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
|||||||||||
|
|
P6SMB62CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 62V; 7.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 7.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
|||||||||||
|
|
P6SMB68A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
|||||||||||
|
|
P6SMB68A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
|||||||||||
 |
VR37000001003FA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 100kΩ; 0.5W; ±1%; Ø4x10mm; 200ppm/°C Type of resistor: metal glaze Mounting: THT Resistance: 100kΩ Power: 0.5W Tolerance: ±1% Max. operating voltage: 3.5kV DC Body dimensions: Ø4x10mm Temperature coefficient: 200ppm/°C Leads: axial |
auf Bestellung 6020 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
CRCW12061K40FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.4kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1.4kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SS25S-E3/5AT |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
| SS25S-E3/61T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Produkt ist nicht verfügbar
| DG442DJ-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; -15÷15V; tube
Type of integrated circuit: analog switch
Case: DIP16
Number of channels: 4
Supply voltage: -15...15V
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Output configuration: SPST-NO
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; -15÷15V; tube
Type of integrated circuit: analog switch
Case: DIP16
Number of channels: 4
Supply voltage: -15...15V
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Output configuration: SPST-NO
Produkt ist nicht verfügbar
| DG444DJ-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 4; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: analog switch
Case: DIP16
Number of channels: 4
Supply voltage: 5...36V; 5...20V
Mounting: THT
Kind of package: tube
Resistance: 50Ω
Output configuration: SPST-NC
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 4; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: analog switch
Case: DIP16
Number of channels: 4
Supply voltage: 5...36V; 5...20V
Mounting: THT
Kind of package: tube
Resistance: 50Ω
Output configuration: SPST-NC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 2.63 EUR |
| 31+ | 2.37 EUR |
| 34+ | 2.1 EUR |
| DG445DJ-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 5÷20V,5÷36V; tube
Supply voltage: 5...20V; 5...36V
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: tube
Output configuration: SPST-NO
Mounting: THT
Case: DIP16
Resistance: 50Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 5÷20V,5÷36V; tube
Supply voltage: 5...20V; 5...36V
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: tube
Output configuration: SPST-NO
Mounting: THT
Case: DIP16
Resistance: 50Ω
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.76 EUR |
| GSC00AB2R21HARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2uF; 50VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 4x5.7mm
Height: 5.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 2.2uF; 50VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 2.2µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 4x5.7mm
Height: 5.7mm
auf Bestellung 3770 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 410+ | 0.18 EUR |
| 680+ | 0.11 EUR |
| 1200+ | 0.06 EUR |
| 1270+ | 0.057 EUR |
| TS53YJ204MR10 |
|
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 200kΩ; 250mW; SMD; ±20%
Mounting: SMD
Resistance: 200kΩ
Power: 0.25W
Tolerance: ±20%
Max. operating voltage: 200V
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 200kΩ; 250mW; SMD; ±20%
Mounting: SMD
Resistance: 200kΩ
Power: 0.25W
Tolerance: ±20%
Max. operating voltage: 200V
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Produkt ist nicht verfügbar
| AC04000001501JAC00 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 1.5kΩ; 4W; ±5%; Ø5.5x16.5mm; axial
Conform to the norm: AEC Q200
Resistance: 1.5kΩ
Tolerance: ±5%
Body dimensions: Ø5.5x16.5mm
Leads: axial
Mounting: THT
Type of resistor: wire-wound
Power: 4W
Category: Power resistors
Description: Resistor: wire-wound; THT; 1.5kΩ; 4W; ±5%; Ø5.5x16.5mm; axial
Conform to the norm: AEC Q200
Resistance: 1.5kΩ
Tolerance: ±5%
Body dimensions: Ø5.5x16.5mm
Leads: axial
Mounting: THT
Type of resistor: wire-wound
Power: 4W
Produkt ist nicht verfügbar
| RCA06031K50FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 1.5kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 1.5kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 1.5kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 1.5kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| RCA12061K50FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 1.5kΩ; 250mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 1.5kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 1.5kΩ; 250mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 1.5kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| SIHL510STRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| GSC00AE1011AARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 10VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 10V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x6.5mm
Height: 6.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 10VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 10V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x6.5mm
Height: 6.5mm
Produkt ist nicht verfügbar
| MAL202134101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø4.5x10mm; ±20%; 2500h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 10V DC
Body dimensions: Ø4.5x10mm
Tolerance: ±20%
Leads: axial
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 10VDC; Ø4.5x10mm; ±20%; 2500h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 10V DC
Body dimensions: Ø4.5x10mm
Tolerance: ±20%
Leads: axial
Service life: 2500h
Operating temperature: -40...85°C
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.97 EUR |
| 57+ | 1.26 EUR |
| 92+ | 0.78 EUR |
| 97+ | 0.74 EUR |
| SIR418DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ILD1 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 50V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 7.5%@10mA
Collector-emitter voltage: 50V
Case: DIP8
Turn-on time: 8.6µs
Turn-off time: 1.6µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 50V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 7.5%@10mA
Collector-emitter voltage: 50V
Case: DIP8
Turn-on time: 8.6µs
Turn-off time: 1.6µs
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 93+ | 0.77 EUR |
| 110+ | 0.65 EUR |
| 136+ | 0.53 EUR |
| 152+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| ILD1206T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 3333V; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 3333V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Conform to the norm: UL; VDE
Turn-on time: 5µs
Turn-off time: 4µs
Max. off-state voltage: 6V
Manufacturer series: IL120XT
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 3333V; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 3333V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Conform to the norm: UL; VDE
Turn-on time: 5µs
Turn-off time: 4µs
Max. off-state voltage: 6V
Manufacturer series: IL120XT
Produkt ist nicht verfügbar
| ILD1207T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 3333V; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 3333V
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Conform to the norm: UL; VDE
Turn-on time: 5µs
Turn-off time: 4µs
Max. off-state voltage: 6V
Manufacturer series: IL120XT
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 3333V; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 3333V
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Conform to the norm: UL; VDE
Turn-on time: 5µs
Turn-off time: 4µs
Max. off-state voltage: 6V
Manufacturer series: IL120XT
Produkt ist nicht verfügbar
| SS2H10-E3/52T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
auf Bestellung 687 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 260+ | 0.28 EUR |
| 355+ | 0.2 EUR |
| 400+ | 0.18 EUR |
| 485+ | 0.15 EUR |
| 515+ | 0.14 EUR |
| SS2H10-E3/5BT |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Produkt ist nicht verfügbar
| SS2H10-M3/52T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Produkt ist nicht verfügbar
| SS2H10-M3/5BT |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Produkt ist nicht verfügbar
| SS2H10HE3_A/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Produkt ist nicht verfügbar
| SS2H10HE3_A/I |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Produkt ist nicht verfügbar
| SS2H10HM3_A/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Produkt ist nicht verfügbar
| SS2H10HM3_A/I |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Produkt ist nicht verfügbar
| SQJ158EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQJ402EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQJ443EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQJ465EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.56 EUR |
| 51+ | 1.42 EUR |
| 64+ | 1.13 EUR |
| 68+ | 1.06 EUR |
| 500+ | 1.04 EUR |
| SQJ858AEP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4128DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.7A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.7A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4134DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.2A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.2A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.2A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.2A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 7442 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 1.04 EUR |
| 164+ | 0.44 EUR |
| 183+ | 0.39 EUR |
| 251+ | 0.29 EUR |
| 266+ | 0.27 EUR |
| SI4174DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.5A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.5A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2102 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 97+ | 0.74 EUR |
| 111+ | 0.64 EUR |
| 135+ | 0.53 EUR |
| 143+ | 0.5 EUR |
| SI4686DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; 3.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Power dissipation: 3.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; 3.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Power dissipation: 3.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1261 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 1.16 EUR |
| 102+ | 0.71 EUR |
| 117+ | 0.61 EUR |
| 136+ | 0.53 EUR |
| 143+ | 0.5 EUR |
| BZX384C36-E3-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| BZX384C7V5-E3-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| CRCW08052K37FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.37kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.37kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.37kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.37kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 11400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2200+ | 0.034 EUR |
| 4000+ | 0.018 EUR |
| 6500+ | 0.011 EUR |
| 11400+ | 0.0063 EUR |
| CRCW08052R37FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.37Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.37Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.37Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.37Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| PR03000203609JAC00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 36Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 36Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 36Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 36Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| SMCJ18A-E3/57T |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 20V; 51.4A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 20V; 51.4A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 228+ | 0.31 EUR |
| 298+ | 0.24 EUR |
| 316+ | 0.23 EUR |
| RCA0805390RFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 390Ω; 125mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 390Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0805; 390Ω; 125mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 390Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| RCA0805680RFHEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 680Ω; 125mW; ±1%; -55÷155°C; 50ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 680Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0805; 680Ω; 125mW; ±1%; -55÷155°C; 50ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 680Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| BZX55C68-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 68V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 68V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.19 EUR |
| RCA0402100RFKED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 100Ω; 63mW; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Tolerance: ±1%
Resistance: 100Ω
Power: 63mW
Type of resistor: thick film
Case - mm: 1005
Case - inch: 0402
Category: SMD resistors
Description: Resistor: thick film; 0402; 100Ω; 63mW; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Max. operating voltage: 50V
Temperature coefficient: 100ppm/°C
Tolerance: ±1%
Resistance: 100Ω
Power: 63mW
Type of resistor: thick film
Case - mm: 1005
Case - inch: 0402
Produkt ist nicht verfügbar
| VJ1812Y223KXETW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 500V; X7R; ±10%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 500V; X7R; ±10%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ1206Y223KXETW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22nF; 500V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 22nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22nF; 500V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 22nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| SIRA14BDP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 52A
Pulsed drain current: 130A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.02mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 52A
Pulsed drain current: 130A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.02mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| VS-HFA30PB120PBF |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 120A; TO247AC; 47ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO247AC
Max. forward voltage: 2.3V
Reverse recovery time: 47ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 120A; TO247AC; 47ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO247AC
Max. forward voltage: 2.3V
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
| RCA0805470KFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 470kΩ; 125mW; ±1%; -55÷155°C; 100ppm/°C
Resistance: 470kΩ
Tolerance: ±1%
Power: 0.125W
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Max. operating voltage: 150V
Conform to the norm: AEC Q200
Type of resistor: thick film
Case - mm: 2012
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; 0805; 470kΩ; 125mW; ±1%; -55÷155°C; 100ppm/°C
Resistance: 470kΩ
Tolerance: ±1%
Power: 0.125W
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Max. operating voltage: 150V
Conform to the norm: AEC Q200
Type of resistor: thick film
Case - mm: 2012
Case - inch: 0805
Produkt ist nicht verfügbar
| CRCW0805470KJNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 470kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 470kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 470kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 470kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| P6SMB62A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB62A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB62A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB62A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB62CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB62CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 62V; 7.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB68A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB68A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| VR37000001003FA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 100kΩ; 0.5W; ±1%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±1%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal glaze; THT; 100kΩ; 0.5W; ±1%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±1%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
auf Bestellung 6020 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 440+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 570+ | 0.13 EUR |
| 660+ | 0.11 EUR |
| 1000+ | 0.099 EUR |
| CRCW12061K40FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.4kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.4kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.4kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.4kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1700+ | 0.044 EUR |
| 2200+ | 0.033 EUR |