| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SI7615CDN-T1-GE3 | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Power dissipation: 21.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SQA401EEJ-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.55A Power dissipation: 4.5W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 113mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SQA470EEJ-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.25A Power dissipation: 13.6W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 56mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| SI7611DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -18A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -18A Pulsed drain current: -20A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA459EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -40A Power dissipation: 10W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHH070N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 93A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 93A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 71mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| KMKP 900-1.0IA | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 1uF; Ø35x52mm; ±10%; 900VAC; 16A Type of capacitor: polypropylene Capacitance: 1µF Body dimensions: Ø35x52mm Tolerance: ±10% Operating voltage: 900V AC Max. operating current: 16A |
Produkt ist nicht verfügbar |
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| AC03000003908JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 3.9Ω; 3W; ±5%; Ø4.8x13mm Type of resistor: wire-wound Mounting: THT Resistance: 3.9Ω Power: 3W Tolerance: ±5% Body dimensions: Ø4.8x13mm |
Produkt ist nicht verfügbar |
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PR03000203908JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 3.9Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 3.9Ω Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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IRFL210PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.6A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MBB02070C2702FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 27kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 27kΩ Tolerance: ±1% Power: 0.6W Operating temperature: -55...155°C Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm Leads: axial |
auf Bestellung 1386 Stücke: Lieferzeit 14-21 Tag (e) |
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| Si8410DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A Technology: TrenchFET® Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.8W On-state resistance: 68mΩ Pulsed drain current: 20A Drain current: 5.7A Polarisation: unipolar Gate charge: 16nC Drain-source voltage: 20V Gate-source voltage: ±8V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| SIR410DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® SO8 Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 36W |
Produkt ist nicht verfügbar |
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| SISH410DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W Mounting: SMD Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar |
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| AC10000003909JAB00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 39Ω; 10W; ±5%; Ø8x44mm; axial Power: 10W Resistance: 39Ω Tolerance: ±5% Body dimensions: Ø8x44mm Leads: axial Conform to the norm: AEC Q200 Mounting: THT Type of resistor: wire-wound |
Produkt ist nicht verfügbar |
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MBB02070C3909FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 39Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Max. operating voltage: 350V Leads: axial Mounting: THT Operating temperature: -55...155°C Type of resistor: metal film Power: 0.6W Resistance: 39Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 860 Stücke: Lieferzeit 14-21 Tag (e) |
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MRS25000C3909FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 39Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Max. operating voltage: 350V Mounting: THT Type of resistor: thin film Power: 0.6W Resistance: 39Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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PR03000201208JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 1.2Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 1.2Ω Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHJ690N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 11A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 11A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| AC03000001507JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 150Ω; 3W; ±5%; Ø4.8x13mm Type of resistor: wire-wound Mounting: THT Resistance: 150Ω Power: 3W Tolerance: ±5% Body dimensions: Ø4.8x13mm |
Produkt ist nicht verfügbar |
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BYS12-90-E3/TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SMA Max. off-state voltage: 90V Max. forward voltage: 0.75V Load current: 1.5A Semiconductor structure: single diode Max. forward impulse current: 40A |
auf Bestellung 2717 Stücke: Lieferzeit 14-21 Tag (e) |
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| MAL219359479E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 47uF; 500VDC; Ø22x25mm; ±20% Operating voltage: 500V DC Operating temperature: -25...105°C Mounting: SNAP-IN Terminal pitch: 10mm Tolerance: ±20% Body dimensions: Ø22x25mm Type of capacitor: electrolytic Capacitance: 47µF Service life: 5000h |
Produkt ist nicht verfügbar |
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| SI7613DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -60A Power dissipation: 52.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±16V On-state resistance: 14mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7623DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Mounting: SMD Kind of package: reel; tape Power dissipation: 52W Polarisation: unipolar Gate charge: 180nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -80A Case: PowerPAK® 1212-8 Drain-source voltage: -20V Drain current: -35A On-state resistance: 9mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| SI7629DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 177nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7633DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7686DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 50A Power dissipation: 37.9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7686DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 50A Power dissipation: 37.9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SISH625DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| KMKP600-100IBR | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 100uF; Ø84x190mm; 600VAC; 80A Type of capacitor: polypropylene Capacitance: 100µF Body dimensions: Ø84x190mm Operating voltage: 600V AC Max. operating current: 80A |
Produkt ist nicht verfügbar |
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| 1N5253B-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 25V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 25V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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CRCW040215R0FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 15Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 15Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
auf Bestellung 7196 Stücke: Lieferzeit 14-21 Tag (e) |
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RCA060368K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 68kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 68kΩ Tolerance: ±1% Power: 0.1W Operating temperature: -55...155°C Max. operating voltage: 75V Temperature coefficient: 100ppm/°C Case - inch: 0603 Case - mm: 1608 Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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VJ0603A221FXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 220pF; 100V; C0G (NP0); ±1%; SMD; 0603 Mounting: SMD Operating temperature: -55...125°C Tolerance: ±1% Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 220pF Operating voltage: 100V Case - mm: 1608 Case - inch: 0603 |
Produkt ist nicht verfügbar |
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| SIJA52DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 48W On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SUP53P06-20-E3 | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -46.8A Power dissipation: 66.7W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 611 Stücke: Lieferzeit 14-21 Tag (e) |
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DG445DY-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; tube Supply voltage: 5...20V; 5...36V Type of integrated circuit: analog switch Number of channels: 4 Kind of package: tube Output configuration: SPST-NO Mounting: SMD Case: SO16 Resistance: 50Ω |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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DG445DY-T1-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; reel,tape Supply voltage: 5...20V; 5...36V Type of integrated circuit: analog switch Number of channels: 4 Kind of package: reel; tape Output configuration: SPST-NO Mounting: SMD Case: SO16 Resistance: 50Ω |
auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIR403EDP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A Kind of package: reel; tape Drain-source voltage: -30V Drain current: -40A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 56.8W Polarisation: unipolar Gate charge: 153nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -60A Mounting: SMD Case: PowerPAK® SO8 |
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VJ0603A1R2CXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603 Type of capacitor: ceramic Capacitance: 1.2pF Operating voltage: 100V Dielectric: C0G (NP0) Capacitance tolerance: ±0.25pF Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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VJ0603A1R2CXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 1.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1.2pF Operating voltage: 50V Dielectric: C0G (NP0) Capacitance tolerance: ±0.25pF Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 4100 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08055R11FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 5.11Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 5.11Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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| IL213AT | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8 Collector-emitter voltage: 30V Case: SOIC8 Mounting: SMD Manufacturer series: IL21XAT Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Number of channels: 1 Kind of output: transistor Insulation voltage: 4kV CTR@If: 100-130%@10mA Conform to the norm: UL Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
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| SUM85N15-19-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 85A Pulsed drain current: 180A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SUP85N15-21-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 85A Pulsed drain current: 180A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TZMC33-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR422DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 70A Power dissipation: 22.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02040D8450BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 845Ω; 0.4W; ±0.1% Operating temperature: -55...155°C Mounting: SMD Type of resistor: thin film Case: 0204 MiniMELF Power: 0.4W Resistance: 845Ω Tolerance: ±0.1% Body dimensions: Ø1.5x3.6mm Temperature coefficient: 25ppm/°C Max. operating voltage: 200V |
Produkt ist nicht verfügbar |
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293D337X96R3D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 330uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 330µF Operating voltage: 6.3V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
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P6SMB22A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 18.8A Breakdown voltage: 22V Max. off-state voltage: 18.8V |
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P6SMB22A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 18.8A Breakdown voltage: 22V Max. off-state voltage: 18.8V |
Produkt ist nicht verfügbar |
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P6SMB22A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 18.8A Breakdown voltage: 22V Max. off-state voltage: 18.8V |
Produkt ist nicht verfügbar |
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P6SMB22A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 18.8A Breakdown voltage: 22V Max. off-state voltage: 18.8V |
Produkt ist nicht verfügbar |
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P6SMB22CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 18.8A Breakdown voltage: 22V Max. off-state voltage: 18.8V |
Produkt ist nicht verfügbar |
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P6SMB22CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 18.8A Breakdown voltage: 22V Max. off-state voltage: 18.8V |
Produkt ist nicht verfügbar |
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P6SMB22CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 18.8A Breakdown voltage: 22V Max. off-state voltage: 18.8V |
Produkt ist nicht verfügbar |
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P6SMB22CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 18.8A Breakdown voltage: 22V Max. off-state voltage: 18.8V |
Produkt ist nicht verfügbar |
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| SQ4282EY-T1_BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BYT56M | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 80A Case: SOD64 Max. forward voltage: 1.4V Reverse recovery time: 100ns |
auf Bestellung 699 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7862ADP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W Case: PowerPAK® SO8 Drain-source voltage: 16V Drain current: 29A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD |
Produkt ist nicht verfügbar |
| SI7615CDN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Power dissipation: 21.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Power dissipation: 21.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQA401EEJ-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQA470EEJ-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| SI7611DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
Pulsed drain current: -20A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
Pulsed drain current: -20A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA459EDJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHH070N60EF-T1GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 93A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 93A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 93A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 93A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| KMKP 900-1.0IA |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; Ø35x52mm; ±10%; 900VAC; 16A
Type of capacitor: polypropylene
Capacitance: 1µF
Body dimensions: Ø35x52mm
Tolerance: ±10%
Operating voltage: 900V AC
Max. operating current: 16A
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; Ø35x52mm; ±10%; 900VAC; 16A
Type of capacitor: polypropylene
Capacitance: 1µF
Body dimensions: Ø35x52mm
Tolerance: ±10%
Operating voltage: 900V AC
Max. operating current: 16A
Produkt ist nicht verfügbar
| AC03000003908JAC00 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9Ω; 3W; ±5%; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9Ω; 3W; ±5%; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Produkt ist nicht verfügbar
| PR03000203908JAC00 |
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Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 3.9Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 3.9Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 3.9Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 3.9Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| IRFL210PBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MBB02070C2702FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 27kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 27kΩ
Tolerance: ±1%
Power: 0.6W
Operating temperature: -55...155°C
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 27kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 27kΩ
Tolerance: ±1%
Power: 0.6W
Operating temperature: -55...155°C
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Leads: axial
auf Bestellung 1386 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 264+ | 0.27 EUR |
| 443+ | 0.16 EUR |
| 561+ | 0.13 EUR |
| 618+ | 0.12 EUR |
| 1226+ | 0.058 EUR |
| 1297+ | 0.055 EUR |
| Si8410DB-T2-E1 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A
Technology: TrenchFET®
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.8W
On-state resistance: 68mΩ
Pulsed drain current: 20A
Drain current: 5.7A
Polarisation: unipolar
Gate charge: 16nC
Drain-source voltage: 20V
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A
Technology: TrenchFET®
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.8W
On-state resistance: 68mΩ
Pulsed drain current: 20A
Drain current: 5.7A
Polarisation: unipolar
Gate charge: 16nC
Drain-source voltage: 20V
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SIR410DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Produkt ist nicht verfügbar
| SISH410DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
| AC10000003909JAB00 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 10W; ±5%; Ø8x44mm; axial
Power: 10W
Resistance: 39Ω
Tolerance: ±5%
Body dimensions: Ø8x44mm
Leads: axial
Conform to the norm: AEC Q200
Mounting: THT
Type of resistor: wire-wound
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 10W; ±5%; Ø8x44mm; axial
Power: 10W
Resistance: 39Ω
Tolerance: ±5%
Body dimensions: Ø8x44mm
Leads: axial
Conform to the norm: AEC Q200
Mounting: THT
Type of resistor: wire-wound
Produkt ist nicht verfügbar
| MBB02070C3909FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 39Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: metal film; THT; 39Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 300+ | 0.24 EUR |
| 860+ | 0.084 EUR |
| MRS25000C3909FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 39Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Max. operating voltage: 350V
Mounting: THT
Type of resistor: thin film
Power: 0.6W
Resistance: 39Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 39Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Max. operating voltage: 350V
Mounting: THT
Type of resistor: thin film
Power: 0.6W
Resistance: 39Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| PR03000201208JAC00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 1.2Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 1.2Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 1.2Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 1.2Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)| SIHJ690N60E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 11A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 11A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 11A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 11A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AC03000001507JAC00 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 150Ω; 3W; ±5%; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 150Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Category: Power resistors
Description: Resistor: wire-wound; THT; 150Ω; 3W; ±5%; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 150Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Produkt ist nicht verfügbar
| BYS12-90-E3/TR |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
Max. off-state voltage: 90V
Max. forward voltage: 0.75V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
Max. off-state voltage: 90V
Max. forward voltage: 0.75V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 40A
auf Bestellung 2717 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 199+ | 0.36 EUR |
| 358+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 458+ | 0.16 EUR |
| 484+ | 0.15 EUR |
| MAL219359479E3 |
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 47uF; 500VDC; Ø22x25mm; ±20%
Operating voltage: 500V DC
Operating temperature: -25...105°C
Mounting: SNAP-IN
Terminal pitch: 10mm
Tolerance: ±20%
Body dimensions: Ø22x25mm
Type of capacitor: electrolytic
Capacitance: 47µF
Service life: 5000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 47uF; 500VDC; Ø22x25mm; ±20%
Operating voltage: 500V DC
Operating temperature: -25...105°C
Mounting: SNAP-IN
Terminal pitch: 10mm
Tolerance: ±20%
Body dimensions: Ø22x25mm
Type of capacitor: electrolytic
Capacitance: 47µF
Service life: 5000h
Produkt ist nicht verfügbar
| SI7613DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7623DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| SI7629DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7633DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7686DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 50A
Power dissipation: 37.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 50A
Power dissipation: 37.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7686DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 50A
Power dissipation: 37.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 50A
Power dissipation: 37.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISH625DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| KMKP600-100IBR |
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100uF; Ø84x190mm; 600VAC; 80A
Type of capacitor: polypropylene
Capacitance: 100µF
Body dimensions: Ø84x190mm
Operating voltage: 600V AC
Max. operating current: 80A
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100uF; Ø84x190mm; 600VAC; 80A
Type of capacitor: polypropylene
Capacitance: 100µF
Body dimensions: Ø84x190mm
Operating voltage: 600V AC
Max. operating current: 80A
Produkt ist nicht verfügbar
| 1N5253B-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 25V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 25V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 25V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 25V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| CRCW040215R0FKTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 15Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 15Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 15Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 15Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
auf Bestellung 7196 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.018 EUR |
| RCA060368K0FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 68kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 68kΩ
Tolerance: ±1%
Power: 0.1W
Operating temperature: -55...155°C
Max. operating voltage: 75V
Temperature coefficient: 100ppm/°C
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 68kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 68kΩ
Tolerance: ±1%
Power: 0.1W
Operating temperature: -55...155°C
Max. operating voltage: 75V
Temperature coefficient: 100ppm/°C
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| VJ0603A221FXBAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 100V; C0G (NP0); ±1%; SMD; 0603
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±1%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 220pF
Operating voltage: 100V
Case - mm: 1608
Case - inch: 0603
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 100V; C0G (NP0); ±1%; SMD; 0603
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±1%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 220pF
Operating voltage: 100V
Case - mm: 1608
Case - inch: 0603
Produkt ist nicht verfügbar
| SIJA52DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SUP53P06-20-E3 |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 611 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.1 EUR |
| 26+ | 2.79 EUR |
| 36+ | 2.03 EUR |
| 38+ | 1.92 EUR |
| DG445DY-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; tube
Supply voltage: 5...20V; 5...36V
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: tube
Output configuration: SPST-NO
Mounting: SMD
Case: SO16
Resistance: 50Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; tube
Supply voltage: 5...20V; 5...36V
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: tube
Output configuration: SPST-NO
Mounting: SMD
Case: SO16
Resistance: 50Ω
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.54 EUR |
| 52+ | 1.39 EUR |
| 59+ | 1.23 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| DG445DY-T1-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; reel,tape
Supply voltage: 5...20V; 5...36V
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: reel; tape
Output configuration: SPST-NO
Mounting: SMD
Case: SO16
Resistance: 50Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; reel,tape
Supply voltage: 5...20V; 5...36V
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: reel; tape
Output configuration: SPST-NO
Mounting: SMD
Case: SO16
Resistance: 50Ω
auf Bestellung 799 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.54 EUR |
| 52+ | 1.39 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| SIR403EDP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -40A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 56.8W
Polarisation: unipolar
Gate charge: 153nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -60A
Mounting: SMD
Case: PowerPAK® SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -40A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 56.8W
Polarisation: unipolar
Gate charge: 153nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -60A
Mounting: SMD
Case: PowerPAK® SO8
Produkt ist nicht verfügbar
| VJ0603A1R2CXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 1.2pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 1.2pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603A1R2CXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1.2pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1.2pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 4100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3800+ | 0.019 EUR |
| 4100+ | 0.017 EUR |
| CRCW08055R11FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 5.11Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 5.11Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 5.11Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 5.11Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| IL213AT |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8
Collector-emitter voltage: 30V
Case: SOIC8
Mounting: SMD
Manufacturer series: IL21XAT
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 100-130%@10mA
Conform to the norm: UL
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8
Collector-emitter voltage: 30V
Case: SOIC8
Mounting: SMD
Manufacturer series: IL21XAT
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 100-130%@10mA
Conform to the norm: UL
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
| SUM85N15-19-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SUP85N15-21-E3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TZMC33-GS08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1299+ | 0.055 EUR |
| 2451+ | 0.029 EUR |
| 2778+ | 0.026 EUR |
| 3179+ | 0.022 EUR |
| 3363+ | 0.021 EUR |
| SIR422DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2590 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 59+ | 1.22 EUR |
| 77+ | 0.93 EUR |
| 82+ | 0.87 EUR |
| SMM02040D8450BB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 845Ω; 0.4W; ±0.1%
Operating temperature: -55...155°C
Mounting: SMD
Type of resistor: thin film
Case: 0204 MiniMELF
Power: 0.4W
Resistance: 845Ω
Tolerance: ±0.1%
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 845Ω; 0.4W; ±0.1%
Operating temperature: -55...155°C
Mounting: SMD
Type of resistor: thin film
Case: 0204 MiniMELF
Power: 0.4W
Resistance: 845Ω
Tolerance: ±0.1%
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
Produkt ist nicht verfügbar
| 293D337X96R3D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 330uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 330µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 330uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 330µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Produkt ist nicht verfügbar
| P6SMB22A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Produkt ist nicht verfügbar
| P6SMB22A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Produkt ist nicht verfügbar
| P6SMB22A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Produkt ist nicht verfügbar
| P6SMB22A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Produkt ist nicht verfügbar
| P6SMB22CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Produkt ist nicht verfügbar
| P6SMB22CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Produkt ist nicht verfügbar
| P6SMB22CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Produkt ist nicht verfügbar
| P6SMB22CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Max. off-state voltage: 18.8V
Produkt ist nicht verfügbar
| SQ4282EY-T1_BE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BYT56M |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 92+ | 0.78 EUR |
| 97+ | 0.74 EUR |
| 125+ | 0.57 EUR |
| 133+ | 0.54 EUR |
| SI7862ADP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Case: PowerPAK® SO8
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Case: PowerPAK® SO8
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Produkt ist nicht verfügbar