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IRL540SPBF VISHAY sihl540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IRL540STRLPBF VISHAY sihl540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZG05C5V1-M3-08 BZG05C5V1-M3-08 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95F822C8D40D80C4&compId=bzg05c-m.pdf?ci_sign=8579dc40e7758d2110e1290847b7a9aea3770ff5 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Kind of package: 7 inch reel
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Quantity in set/package: 1500pcs.
Manufacturer series: BZG05C-M
auf Bestellung 1015 Stücke:
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179+0.4 EUR
220+0.33 EUR
252+0.28 EUR
421+0.17 EUR
538+0.13 EUR
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TS53YJ103MR10 TS53YJ103MR10 VISHAY ts53yj.pdf Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
auf Bestellung 486 Stücke:
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28+2.56 EUR
34+2.16 EUR
38+1.89 EUR
50+1.69 EUR
100+1.52 EUR
200+1.47 EUR
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CRCW12061M00FKTABC CRCW12061M00FKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; 200V; -55÷155°C
Resistance: 1MΩ
Tolerance: ±1%
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 100 Stücke:
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100+0.72 EUR
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1.5KE82CA-E3/54 1.5KE82CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 764 Stücke:
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162+0.44 EUR
182+0.39 EUR
208+0.34 EUR
250+0.32 EUR
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GRC00DD1021CTNL GRC00DD1021CTNL VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Produkt ist nicht verfügbar
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IRFP21N60LPBF VISHAY doc?98237 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Produkt ist nicht verfügbar
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IRFP22N60KPBF VISHAY doc?98239 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IRFP26N60LPBF VISHAY doc?98730 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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GBU4A-E3/45 GBU4A-E3/45 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809ED455A165C0D2&compId=gbu4a.pdf?ci_sign=3d60bb606adf73b80bd40b73a5850af667159d59 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 791 Stücke:
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61+1.17 EUR
69+1.04 EUR
77+0.93 EUR
100+0.84 EUR
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GBU4A-E3/51 GBU4A-E3/51 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809ED455A165C0D2&compId=gbu4a.pdf?ci_sign=3d60bb606adf73b80bd40b73a5850af667159d59 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 397 Stücke:
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28+2.63 EUR
50+1.46 EUR
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100+1.14 EUR
250+1.04 EUR
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IRF540STRLPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
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IRF540STRRPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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AC03000001007JAC00 AC03000001007JAC00 VISHAY ac_ac-at_ac-ni.pdf Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Diameter: 4.8mm
Tolerance: ±5%
Temperature coefficient: 80ppm/°C
Leads: axial
Resistor features: non-flammable
Mounting: THT
Type of resistor: wire-wound
Operating temperature: -50...250°C
Leads dimensions: Ø0.8x25mm
Body dimensions: Ø4.8x13mm
Length: 13mm
Resistance: 0.1Ω
Power: 3W
auf Bestellung 1497 Stücke:
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77+0.93 EUR
129+0.56 EUR
167+0.43 EUR
186+0.38 EUR
207+0.35 EUR
500+0.3 EUR
1000+0.27 EUR
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GSC00AF2211VARL GSC00AF2211VARL VISHAY GSC.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
auf Bestellung 21 Stücke:
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VJ0603A151JXBAC VJ0603A151JXBAC VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880 Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 10500 Stücke:
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295+0.24 EUR
538+0.13 EUR
703+0.1 EUR
781+0.092 EUR
1062+0.067 EUR
2000+0.062 EUR
4000+0.058 EUR
Mindestbestellmenge: 295
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VJ1111D100JXRAJ VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D1D1E64081A0CE&compId=vjhifreqseries.pdf?ci_sign=234717e3b6edbad469f20dccf69f62576d02beab Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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BZX55C3V0-TAP BZX55C3V0-TAP VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19616 Stücke:
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715+0.1 EUR
1021+0.07 EUR
1220+0.059 EUR
1819+0.039 EUR
2539+0.028 EUR
5000+0.026 EUR
10000+0.025 EUR
Mindestbestellmenge: 715
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WSL2512R3300FEA WSL2512R3300FEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BDE7373FBE4371BF&compId=wsl.pdf?ci_sign=31a158112628ae78e76ed7d0d814a84fdfe5b05a Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1570 Stücke:
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97+0.74 EUR
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IRF510STRRPBF VISHAY sihf510s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
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IRF830ALPBF IRF830ALPBF VISHAY sihf830a.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 939 Stücke:
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41+1.77 EUR
45+1.6 EUR
47+1.53 EUR
53+1.36 EUR
100+1.29 EUR
250+1.2 EUR
500+1.12 EUR
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IRF830ASPBF VISHAY sihf830a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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IRF830ASTRLPBF VISHAY sihf830a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF830BPBF VISHAY irf830b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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IRF840ASTRRPBF VISHAY sihf840.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCLPBF VISHAY sihf840l.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCSPBF VISHAY sihf840l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840STRRPBF VISHAY sihf840s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9530STRLPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9530STRRPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFB13N50APBF VISHAY tf-irfb13n50apbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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SISS5808DN-T1-GE3 VISHAY siss5808dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain current: 66.6A
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 65.7W
Produkt ist nicht verfügbar
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BZX85C22-TAP BZX85C22-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 4874 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
472+0.15 EUR
562+0.13 EUR
951+0.075 EUR
1279+0.056 EUR
1413+0.051 EUR
Mindestbestellmenge: 358
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IRF640PBF-BE3 IRF640PBF-BE3 VISHAY sihf640.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
52+1.4 EUR
55+1.3 EUR
59+1.23 EUR
100+1.17 EUR
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IRF640STRRPBF VISHAY sihf640s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
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ZSC00AG6811CARL ZSC00AG6811CARL VISHAY ZSC.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 10mm
Diameter: 10mm
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
190+0.38 EUR
320+0.22 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 190
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IFSC1008ABER100M01 VISHAY s108ab01.pdf Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 10µH
Operating current: 0.9A
Manufacturer series: IFSC
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IFSC1008ABER1R0M01 VISHAY s108ab01.pdf Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 1µH
Operating current: 2.65A
Manufacturer series: IFSC
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GSC00AP4702GARL VISHAY GSC.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Produkt ist nicht verfügbar
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CRCW08057K50JNTABC CRCW08057K50JNTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 1200 Stücke:
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1200+0.06 EUR
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MRS16000C3300FCT00 MRS16000C3300FCT00 VISHAY mrs16m25.pdf Category: THT Resistors
Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; 200V; Ø0.5x29mm; L: 3.6mm
Mounting: THT
Power: 0.4W
Operating temperature: -55...155°C
Leads dimensions: Ø0.5x29mm
Diameter: 1.6mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
Tolerance: ±1%
Resistance: 330Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 200V
Type of resistor: thin film
auf Bestellung 2649 Stücke:
Lieferzeit 14-21 Tag (e)
397+0.18 EUR
460+0.16 EUR
574+0.12 EUR
794+0.09 EUR
1208+0.059 EUR
Mindestbestellmenge: 397
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IRF730APBF VISHAY 91045.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730APBF-BE3 VISHAY 91045.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730ASPBF VISHAY sihf730a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730ASTRLPBF VISHAY sihf730a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730STRLPBF VISHAY sihf730s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VJ0603A180JXACW1BC VJ0603A180JXACW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3026 Stücke:
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715+0.1 EUR
2273+0.031 EUR
3026+0.024 EUR
Mindestbestellmenge: 715
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MAL219367121E3 VISHAY 193pursi.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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VJ0402V104ZXJCW2BC VJ0402V104ZXJCW2BC VISHAY 00306xVJW2BC.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
Kind of capacitor: MLCC
auf Bestellung 7562 Stücke:
Lieferzeit 14-21 Tag (e)
4700+0.015 EUR
Mindestbestellmenge: 4700
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SI7852DP-T1-E3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSOP39438 TSOP39438 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8ACD2A742E9FF6143&compId=TSOP39436.pdf?ci_sign=f10660b5f5c855bf068fb07726f92f5fb97afd4b Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 29 Stücke:
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29+2.46 EUR
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TSOP4138 TSOP4138 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BAF96C32129E27&compId=TSOP4138.pdf?ci_sign=7a03254831903f582a949bd5698a48bc95345eff Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 51 Stücke:
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51+1.4 EUR
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TSOP4438 TSOP4438 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C9820DC80A0A18&compId=TSOP4438.pdf?ci_sign=3322f3cf8b1903174897ca0f14bf4f2d6a424066 Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
89+0.81 EUR
109+0.66 EUR
112+0.64 EUR
Mindestbestellmenge: 58
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TSOP58338 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C97E5F41D76A18&compId=TSOP58336.pdf?ci_sign=b4aecd88e119e00a0500410e8be1df59d3ed764b Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
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TSOP6138TT TSOP6138TT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB45F82B073E27&compId=TSOP6138TT.pdf?ci_sign=444e2347833381a899e8ee26ad28b87b0e86f6bf Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Produkt ist nicht verfügbar
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TSOP6238TT TSOP6238TT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB490C0DEB1E27&compId=TSOP6238TT.pdf?ci_sign=b8dc249dbf5b67662b4df96ca20dcd25d047e783 Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Produkt ist nicht verfügbar
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PA16NP472MAB15 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBD9116D482AE80D5&compId=p16-series.pdf?ci_sign=8b114df350ec09dcb670f4c9ff70a4c3e5d03566 Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
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PE30L0FL472KAB PE30L0FL472KAB VISHAY pe30.pdf Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Shaft surface: smooth
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Potentiometer features: for industrial use; for military use
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.6 EUR
5+24.18 EUR
10+22.98 EUR
20+22.49 EUR
50+22.35 EUR
Mindestbestellmenge: 3
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TS53YJ102MR10 TS53YJ102MR10 VISHAY ts53yj.pdf Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Operating voltage: 200V
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
auf Bestellung 976 Stücke:
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26+2.79 EUR
31+2.33 EUR
50+1.9 EUR
100+1.73 EUR
200+1.56 EUR
250+1.53 EUR
Mindestbestellmenge: 26
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IRL540SPBF sihl540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL540STRLPBF sihl540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZG05C5V1-M3-08 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95F822C8D40D80C4&compId=bzg05c-m.pdf?ci_sign=8579dc40e7758d2110e1290847b7a9aea3770ff5
BZG05C5V1-M3-08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Kind of package: 7 inch reel
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Quantity in set/package: 1500pcs.
Manufacturer series: BZG05C-M
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
220+0.33 EUR
252+0.28 EUR
421+0.17 EUR
538+0.13 EUR
Mindestbestellmenge: 179
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TS53YJ103MR10 ts53yj.pdf
TS53YJ103MR10
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
34+2.16 EUR
38+1.89 EUR
50+1.69 EUR
100+1.52 EUR
200+1.47 EUR
Mindestbestellmenge: 28
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CRCW12061M00FKTABC Data Sheet CRCW_BCe3.pdf
CRCW12061M00FKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; 200V; -55÷155°C
Resistance: 1MΩ
Tolerance: ±1%
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
Mindestbestellmenge: 100
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1.5KE82CA-E3/54 15ke_Ser.pdf
1.5KE82CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
182+0.39 EUR
208+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 162
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GRC00DD1021CTNL GRC.pdf
GRC00DD1021CTNL
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Produkt ist nicht verfügbar
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IRFP21N60LPBF doc?98237
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Produkt ist nicht verfügbar
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IRFP22N60KPBF doc?98239
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP26N60LPBF doc?98730
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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GBU4A-E3/45 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809ED455A165C0D2&compId=gbu4a.pdf?ci_sign=3d60bb606adf73b80bd40b73a5850af667159d59
GBU4A-E3/45
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
69+1.04 EUR
77+0.93 EUR
100+0.84 EUR
Mindestbestellmenge: 61
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GBU4A-E3/51 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809ED455A165C0D2&compId=gbu4a.pdf?ci_sign=3d60bb606adf73b80bd40b73a5850af667159d59
GBU4A-E3/51
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
50+1.46 EUR
59+1.23 EUR
100+1.14 EUR
250+1.04 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF540STRLPBF sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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IRF540STRRPBF sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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AC03000001007JAC00 ac_ac-at_ac-ni.pdf
AC03000001007JAC00
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Diameter: 4.8mm
Tolerance: ±5%
Temperature coefficient: 80ppm/°C
Leads: axial
Resistor features: non-flammable
Mounting: THT
Type of resistor: wire-wound
Operating temperature: -50...250°C
Leads dimensions: Ø0.8x25mm
Body dimensions: Ø4.8x13mm
Length: 13mm
Resistance: 0.1Ω
Power: 3W
auf Bestellung 1497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
129+0.56 EUR
167+0.43 EUR
186+0.38 EUR
207+0.35 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 77
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GSC00AF2211VARL GSC.pdf
GSC00AF2211VARL
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
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VJ0603A151JXBAC pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D20E9810A6C0CE&compId=vjcommercialseries.pdf?ci_sign=d87f0e0cac8bf9ad1412e7908e17227c58cfd880
VJ0603A151JXBAC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
538+0.13 EUR
703+0.1 EUR
781+0.092 EUR
1062+0.067 EUR
2000+0.062 EUR
4000+0.058 EUR
Mindestbestellmenge: 295
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VJ1111D100JXRAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94D1D1E64081A0CE&compId=vjhifreqseries.pdf?ci_sign=234717e3b6edbad469f20dccf69f62576d02beab
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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BZX55C3V0-TAP pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C9DC6FD0F66469&compId=BZX55C10-TAP.pdf?ci_sign=1c457e90db8f9db19431e4453446789e4dc6d20d
BZX55C3V0-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 19616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1021+0.07 EUR
1220+0.059 EUR
1819+0.039 EUR
2539+0.028 EUR
5000+0.026 EUR
10000+0.025 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
WSL2512R3300FEA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BDE7373FBE4371BF&compId=wsl.pdf?ci_sign=31a158112628ae78e76ed7d0d814a84fdfe5b05a
WSL2512R3300FEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 1570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
Mindestbestellmenge: 97
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IRF510STRRPBF sihf510s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Produkt ist nicht verfügbar
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IRF830ALPBF sihf830a.pdf
IRF830ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
45+1.6 EUR
47+1.53 EUR
53+1.36 EUR
100+1.29 EUR
250+1.2 EUR
500+1.12 EUR
Mindestbestellmenge: 41
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IRF830ASPBF sihf830a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF830ASTRLPBF sihf830a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF830BPBF irf830b.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840ASTRRPBF sihf840.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCLPBF description sihf840l.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCSPBF sihf840l.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840STRRPBF sihf840s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9530STRLPBF sihf9530.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9530STRRPBF sihf9530.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB13N50APBF tf-irfb13n50apbf.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SISS5808DN-T1-GE3 siss5808dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain current: 66.6A
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 65.7W
Produkt ist nicht verfügbar
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BZX85C22-TAP BZX85C10-TAP.pdf
BZX85C22-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 4874 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
472+0.15 EUR
562+0.13 EUR
951+0.075 EUR
1279+0.056 EUR
1413+0.051 EUR
Mindestbestellmenge: 358
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IRF640PBF-BE3 sihf640.pdf
IRF640PBF-BE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
52+1.4 EUR
55+1.3 EUR
59+1.23 EUR
100+1.17 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF640STRRPBF sihf640s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZSC00AG6811CARL ZSC.pdf
ZSC00AG6811CARL
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 10mm
Diameter: 10mm
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
190+0.38 EUR
320+0.22 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 190
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IFSC1008ABER100M01 s108ab01.pdf
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 10µH
Operating current: 0.9A
Manufacturer series: IFSC
Produkt ist nicht verfügbar
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IFSC1008ABER1R0M01 s108ab01.pdf
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 1µH
Operating current: 2.65A
Manufacturer series: IFSC
Produkt ist nicht verfügbar
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GSC00AP4702GARL GSC.pdf
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Produkt ist nicht verfügbar
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CRCW08057K50JNTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW08057K50JNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1200+0.06 EUR
Mindestbestellmenge: 1200
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MRS16000C3300FCT00 mrs16m25.pdf
MRS16000C3300FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; 200V; Ø0.5x29mm; L: 3.6mm
Mounting: THT
Power: 0.4W
Operating temperature: -55...155°C
Leads dimensions: Ø0.5x29mm
Diameter: 1.6mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
Tolerance: ±1%
Resistance: 330Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 200V
Type of resistor: thin film
auf Bestellung 2649 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
397+0.18 EUR
460+0.16 EUR
574+0.12 EUR
794+0.09 EUR
1208+0.059 EUR
Mindestbestellmenge: 397
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IRF730APBF 91045.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730APBF-BE3 91045.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730ASPBF sihf730a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730ASTRLPBF sihf730a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF730STRLPBF sihf730s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VJ0603A180JXACW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ0603A180JXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3026 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
2273+0.031 EUR
3026+0.024 EUR
Mindestbestellmenge: 715
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MAL219367121E3 193pursi.pdf
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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VJ0402V104ZXJCW2BC 00306xVJW2BC.pdf
VJ0402V104ZXJCW2BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
Kind of capacitor: MLCC
auf Bestellung 7562 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4700+0.015 EUR
Mindestbestellmenge: 4700
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SI7852DP-T1-E3 si7852dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSOP39438 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8ACD2A742E9FF6143&compId=TSOP39436.pdf?ci_sign=f10660b5f5c855bf068fb07726f92f5fb97afd4b
TSOP39438
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
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TSOP4138 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BAF96C32129E27&compId=TSOP4138.pdf?ci_sign=7a03254831903f582a949bd5698a48bc95345eff
TSOP4138
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.4 EUR
Mindestbestellmenge: 51
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TSOP4438 pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C9820DC80A0A18&compId=TSOP4438.pdf?ci_sign=3322f3cf8b1903174897ca0f14bf4f2d6a424066
TSOP4438
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
89+0.81 EUR
109+0.66 EUR
112+0.64 EUR
Mindestbestellmenge: 58
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TSOP58338 pVersion=0046&contRep=ZT&docId=005056AB752F1ED884C97E5F41D76A18&compId=TSOP58336.pdf?ci_sign=b4aecd88e119e00a0500410e8be1df59d3ed764b
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
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TSOP6138TT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB45F82B073E27&compId=TSOP6138TT.pdf?ci_sign=444e2347833381a899e8ee26ad28b87b0e86f6bf
TSOP6138TT
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Produkt ist nicht verfügbar
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TSOP6238TT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B0BB490C0DEB1E27&compId=TSOP6238TT.pdf?ci_sign=b8dc249dbf5b67662b4df96ca20dcd25d047e783
TSOP6238TT
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 100°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Supply voltage: 2.5...5.5V
Viewing angle: 100°
Connector variant: angled
Produkt ist nicht verfügbar
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PA16NP472MAB15 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBD9116D482AE80D5&compId=p16-series.pdf?ci_sign=8b114df350ec09dcb670f4c9ff70a4c3e5d03566
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±20%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
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PE30L0FL472KAB pe30.pdf
PE30L0FL472KAB
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Shaft surface: smooth
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Potentiometer features: for industrial use; for military use
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.6 EUR
5+24.18 EUR
10+22.98 EUR
20+22.49 EUR
50+22.35 EUR
Mindestbestellmenge: 3
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TS53YJ102MR10 ts53yj.pdf
TS53YJ102MR10
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Operating voltage: 200V
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
auf Bestellung 976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
31+2.33 EUR
50+1.9 EUR
100+1.73 EUR
200+1.56 EUR
250+1.53 EUR
Mindestbestellmenge: 26
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