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IRF644STRLPBF VISHAY sihf644s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF644STRRPBF VISHAY sihf644s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI2301CDS-T1-E3 VISHAY si2301cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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MRS25000C2324FCT00 MRS25000C2324FCT00 VISHAY MRS25.pdf Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
Resistance: 2.32MΩ
auf Bestellung 9150 Stücke:
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240+0.3 EUR
570+0.13 EUR
1000+0.078 EUR
5000+0.057 EUR
Mindestbestellmenge: 240
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IRL530STRRPBF VISHAY sihl530s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9540STRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1.5KE130CA-E3/54 1.5KE130CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 577 Stücke:
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85+0.84 EUR
107+0.67 EUR
154+0.46 EUR
500+0.37 EUR
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GRC00JE6821A00L GRC00JE6821A00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 6.8mF
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
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IRFR9024TRLPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFR1N60ATRLPBF VISHAY sihfr1n6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
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IRFR1N60ATRPBF VISHAY sihfr1n6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
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IRFU1N60APBF VISHAY sihfr1n6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
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SIHFR1N60A-GE3 SIHFR1N60A-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC458A75FA6A143&compId=IRFR1N60A.pdf?ci_sign=ebfb7bcce254ade9a17457e6b543988683075e31 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
auf Bestellung 79 Stücke:
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79+0.9 EUR
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SI7850ADP-T1-GE3 VISHAY si7850adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 17nC
On-state resistance: 25mΩ
Power dissipation: 35.7W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
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SI7850DP-T1-E3 VISHAY 71625.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
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IRLR014PBF IRLR014PBF VISHAY sihlr014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
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IRLR014TRLPBF VISHAY sihlr014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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VJ1206A102JXACW1BC VJ1206A102JXACW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 2480 Stücke:
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CRCW0805620KJNTABC CRCW0805620KJNTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; 150V; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Resistance: 620kΩ
Case - inch: 0805
auf Bestellung 3500 Stücke:
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2400+0.031 EUR
3500+0.02 EUR
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CRCW0805620RFKTABC CRCW0805620RFKTABC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7 Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 620Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 99 Stücke:
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IRF9610SPBF VISHAY sihf9610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -7A
Drain current: -1A
Gate charge: 11nC
On-state resistance: 3Ω
Power dissipation: 20W
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
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IRF9610STRRPBF VISHAY sihf9610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9630STRLPBF VISHAY IRF9630S_SiHF9630S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -26A
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IRF9640LPBF VISHAY IRF%28SiHF%299640%28S%2CL%29.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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M43P203KB40 M43P203KB40 VISHAY VISHAY-43.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Terminal pitch: 12.7x2.54mm
Potentiometer standard: 19mm
Number of electrical turns: 15
Min. insulation resistance: 1GΩ
Track material: cermet
IP rating: IP67
auf Bestellung 234 Stücke:
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18+4.18 EUR
20+3.6 EUR
25+3.3 EUR
50+3.1 EUR
100+2.9 EUR
200+2.72 EUR
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IRF9Z24STRLPBF VISHAY sihf9z24.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
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BZX85C20-TAP BZX85C20-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 18131 Stücke:
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239+0.3 EUR
345+0.21 EUR
487+0.15 EUR
568+0.13 EUR
814+0.088 EUR
1000+0.076 EUR
2000+0.065 EUR
5000+0.053 EUR
Mindestbestellmenge: 239
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BZX85C68-TAP BZX85C68-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 20370 Stücke:
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540+0.13 EUR
1100+0.065 EUR
1230+0.058 EUR
1350+0.053 EUR
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VJ0402G104KXQCW1BC VJ0402G104KXQCW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 9953 Stücke:
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5435+0.013 EUR
9616+0.0074 EUR
9953+0.0072 EUR
Mindestbestellmenge: 5435
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IRFP350LCPBF VISHAY doc?98240 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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MCT06030C1008FP500 MCT06030C1008FP500 VISHAY mcx0x0xpre.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 75V; 180mm
Type of resistor: thin film
Case - inch: 0603
Case - mm: 1608
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Mounting: SMD
Operating temperature: -55...125°C; -55...155°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Produkt ist nicht verfügbar
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IRF630STRLPBF VISHAY sih630s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
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IRF630STRRPBF VISHAY sih630s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
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IRF720SPBF VISHAY sihf720s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTCS0805E3334JHT NTCS0805E3334JHT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
auf Bestellung 414 Stücke:
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313+0.23 EUR
343+0.21 EUR
350+0.2 EUR
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NTCS0805E3474FXT NTCS0805E3474FXT VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 470kΩ
Power: 0.21W
Tolerance: ±1%
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Material constant B: 4025K
auf Bestellung 1647 Stücke:
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IRLR024PBF VISHAY sihlr024.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
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IRLR024TRLPBF VISHAY sihlr024.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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IRLR024TRPBF VISHAY sihlr024.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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MAL215097601E3 MAL215097601E3 VISHAY 150clz.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
auf Bestellung 816 Stücke:
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33+2.23 EUR
51+1.42 EUR
65+1.1 EUR
100+1.02 EUR
500+0.89 EUR
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P6KE39A-E3/73 P6KE39A-E3/73 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDD89A4C6B48D4FC0D2&compId=p6ke.pdf?ci_sign=eef68df7435691c5e7a990d68d6a3bca2623211c Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 2217 Stücke:
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193+0.37 EUR
244+0.29 EUR
315+0.23 EUR
500+0.18 EUR
1000+0.16 EUR
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PR02000201009JN300 PR02000201009JN300 VISHAY pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Diameter: 3.9mm
Length: 12mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: power metal
Body dimensions: Ø3.9x12mm
auf Bestellung 2290 Stücke:
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300+0.24 EUR
500+0.15 EUR
550+0.13 EUR
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PR02000201009JA100 PR02000201009JA100 VISHAY pr010203.pdf Category: THT Resistors
Description: Resistor: metal film; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x10mm; 250ppm/°C
Mounting: THT
Diameter: 3.9mm
Length: 10mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: metal film
Body dimensions: Ø3.9x10mm
auf Bestellung 1585 Stücke:
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278+0.26 EUR
447+0.16 EUR
517+0.14 EUR
575+0.12 EUR
641+0.11 EUR
739+0.097 EUR
824+0.087 EUR
1000+0.078 EUR
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TCMT1600 TCMT1600 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AEF36FD58FBA7E27&compId=TCMTX60X-DTE.pdf?ci_sign=de8bc37f093d07d48ab144b31caa4d29520460ca Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: Mini-flat 4pin
Turn-on time: 6µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 80-300%@5mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5µs
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97+0.74 EUR
130+0.55 EUR
179+0.4 EUR
500+0.32 EUR
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TS63Y102KT20
+1
 		TS63Y102KT20 VISHAY TS63.pdf Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.85x6.85x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Track material: cermet
Kind of potentiometer: horizontal; multiturn
auf Bestellung 500 Stücke:
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24+3.09 EUR
50+2.87 EUR
200+2.69 EUR
500+2.62 EUR
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WSL2512R1000FEA WSL2512R1000FEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BDE7373FBE4371BF&compId=wsl.pdf?ci_sign=31a158112628ae78e76ed7d0d814a84fdfe5b05a Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 3611 Stücke:
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132+0.54 EUR
180+0.4 EUR
247+0.29 EUR
280+0.26 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 132
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WSL2512R1500FEA WSL2512R1500FEA VISHAY wsl.pdf Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.15Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 403 Stücke:
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107+0.67 EUR
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CNY17-3X009T CNY17-3X009T VISHAY cny17.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
auf Bestellung 425 Stücke:
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88+0.82 EUR
122+0.59 EUR
152+0.47 EUR
168+0.43 EUR
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BFC233620473 BFC233620473 VISHAY mkp3362x2.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 15mm
Body dimensions: 5x11x17.5mm
Kind of capacitor: X2
Leads: 2pin
Lead length: 3.5mm
Climate class: 55/105/56
auf Bestellung 4028 Stücke:
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120+0.6 EUR
241+0.3 EUR
336+0.21 EUR
379+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 120
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IRLZ34PBF VISHAY IRLZ34%2CSiHLZ34.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 70mΩ
Gate-source voltage: ±10V
Pulsed drain current: 110A
Gate charge: 35nC
Kind of package: tube
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SIHP10N40D-GE3 VISHAY sihp10n40d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 23A
Produkt ist nicht verfügbar
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BFC233868418 BFC233868418 VISHAY mkp3386y2.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm
Type of capacitor: polypropylene
Mounting: THT
Kind of capacitor: Y2
Capacitance: 1nF
Terminal pitch: 10mm
Body dimensions: 12.5x4x10mm
Tolerance: ±20%
Operating voltage: 300V AC; 1kV DC
auf Bestellung 1947 Stücke:
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173+0.41 EUR
1400+0.38 EUR
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TDCG1060M TDCG1060M VISHAY TDCG1050M.pdf Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Colour: green
Type of display: LED
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Digit height: 10mm; 0.39"
Operating current: 20mA
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Kind of display: 7-segment
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
30+2.42 EUR
48+1.99 EUR
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T18105KT10 T18105KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Number of electrical turns: 15 ±1
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
Track material: cermet
Kind of potentiometer: multiturn
auf Bestellung 145 Stücke:
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20+3.62 EUR
32+2.3 EUR
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T93YB105KT20 T93YB105KT20 VISHAY t93.pdf Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Resistance: 1MΩ
Power: 0.5W
Tolerance: ±10%
Operating voltage: 250V
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
auf Bestellung 221 Stücke:
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30+2.43 EUR
49+1.47 EUR
54+1.34 EUR
Mindestbestellmenge: 30
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SI2301BDS-T1-E3 VISHAY si2301bds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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VJ0603A331GXACW1BC VJ0603A331GXACW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 330pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.33nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3461 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
1429+0.05 EUR
1786+0.04 EUR
1954+0.037 EUR
2348+0.03 EUR
2526+0.028 EUR
2703+0.026 EUR
Mindestbestellmenge: 500
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IRFDC20PBF VISHAY sihfdc20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GRC00KK1022A00L GRC00KK1022A00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
auf Bestellung 235 Stücke:
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35+2.04 EUR
47+1.54 EUR
58+1.24 EUR
100+1.12 EUR
Mindestbestellmenge: 35
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SMAJ58CA-E3/61 SMAJ58CA-E3/61 VISHAY smaj50a.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; bidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 4740 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
298+0.24 EUR
360+0.2 EUR
770+0.093 EUR
Mindestbestellmenge: 250
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IRF644STRLPBF sihf644s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF644STRRPBF sihf644s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI2301CDS-T1-E3 si2301cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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MRS25000C2324FCT00 MRS25.pdf
MRS25000C2324FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
Resistance: 2.32MΩ
auf Bestellung 9150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.3 EUR
570+0.13 EUR
1000+0.078 EUR
5000+0.057 EUR
Mindestbestellmenge: 240
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IRL530STRRPBF sihl530s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9540STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1.5KE130CA-E3/54 15ke_Ser.pdf
1.5KE130CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
107+0.67 EUR
154+0.46 EUR
500+0.37 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
GRC00JE6821A00L GRC.pdf
GRC00JE6821A00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 6.8mF
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024TRLPBF sihfr902.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR1N60ATRLPBF sihfr1n6.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
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IRFR1N60ATRPBF sihfr1n6.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU1N60APBF sihfr1n6.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFR1N60A-GE3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC458A75FA6A143&compId=IRFR1N60A.pdf?ci_sign=ebfb7bcce254ade9a17457e6b543988683075e31
SIHFR1N60A-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.9 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
SI7850ADP-T1-GE3 si7850adp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 17nC
On-state resistance: 25mΩ
Power dissipation: 35.7W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
Produkt ist nicht verfügbar
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SI7850DP-T1-E3 71625.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRLR014PBF sihlr014.pdf
IRLR014PBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRLR014TRLPBF sihlr014.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ1206A102JXACW1BC vjw1bcbascomseries.pdf
VJ1206A102JXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
CRCW0805620KJNTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW0805620KJNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; 150V; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Resistance: 620kΩ
Case - inch: 0805
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2400+0.031 EUR
3500+0.02 EUR
Mindestbestellmenge: 2400
Im Einkaufswagen  Stück im Wert von  UAH
CRCW0805620RFKTABC pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC299F885208FA8&compId=Data%20Sheet%20CRCW_BCe3.pdf?ci_sign=08ed674bf2e2c4c7c988bbfb6d6d30495f8b11a7
CRCW0805620RFKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 620Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610SPBF sihf9610.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -7A
Drain current: -1A
Gate charge: 11nC
On-state resistance: 3Ω
Power dissipation: 20W
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610STRRPBF sihf9610.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630STRLPBF IRF9630S_SiHF9630S.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -26A
Produkt ist nicht verfügbar
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IRF9640LPBF IRF%28SiHF%299640%28S%2CL%29.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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M43P203KB40 VISHAY-43.pdf
M43P203KB40
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Terminal pitch: 12.7x2.54mm
Potentiometer standard: 19mm
Number of electrical turns: 15
Min. insulation resistance: 1GΩ
Track material: cermet
IP rating: IP67
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
20+3.6 EUR
25+3.3 EUR
50+3.1 EUR
100+2.9 EUR
200+2.72 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24STRLPBF sihf9z24.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX85C20-TAP BZX85C10-TAP.pdf
BZX85C20-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 18131 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
345+0.21 EUR
487+0.15 EUR
568+0.13 EUR
814+0.088 EUR
1000+0.076 EUR
2000+0.065 EUR
5000+0.053 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C68-TAP BZX85C10-TAP.pdf
BZX85C68-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 20370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
540+0.13 EUR
1100+0.065 EUR
1230+0.058 EUR
1350+0.053 EUR
Mindestbestellmenge: 540
Im Einkaufswagen  Stück im Wert von  UAH
VJ0402G104KXQCW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
VJ0402G104KXQCW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
auf Bestellung 9953 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5435+0.013 EUR
9616+0.0074 EUR
9953+0.0072 EUR
Mindestbestellmenge: 5435
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IRFP350LCPBF doc?98240
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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MCT06030C1008FP500 mcx0x0xpre.pdf
MCT06030C1008FP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 75V; 180mm
Type of resistor: thin film
Case - inch: 0603
Case - mm: 1608
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Mounting: SMD
Operating temperature: -55...125°C; -55...155°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Produkt ist nicht verfügbar
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IRF630STRLPBF sih630s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF630STRRPBF sih630s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF720SPBF sihf720s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTCS0805E3334JHT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae
NTCS0805E3334JHT
Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
313+0.23 EUR
343+0.21 EUR
350+0.2 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
NTCS0805E3474FXT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DC3A4ED8AE3E28&compId=ntcs0805e3t.pdf?ci_sign=f55aa810fa710c24b5bf50290de027a7e0905cae
NTCS0805E3474FXT
Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 470kΩ
Power: 0.21W
Tolerance: ±1%
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Material constant B: 4025K
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
133+0.54 EUR
500+0.41 EUR
1000+0.39 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
IRLR024PBF description sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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IRLR024TRLPBF sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR024TRPBF sihlr024.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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MAL215097601E3 150clz.pdf
MAL215097601E3
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
auf Bestellung 816 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
51+1.42 EUR
65+1.1 EUR
100+1.02 EUR
500+0.89 EUR
Mindestbestellmenge: 33
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P6KE39A-E3/73 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD89A4C6B48D4FC0D2&compId=p6ke.pdf?ci_sign=eef68df7435691c5e7a990d68d6a3bca2623211c
P6KE39A-E3/73
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 2217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
244+0.29 EUR
315+0.23 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 193
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PR02000201009JN300 pVersion=0046&contRep=ZT&docId=E2A3660DCA9A34F19A99005056AB752F&compId=PR_Vishay.pdf?ci_sign=589fb1d4e4206506921d35cc618e18cbe2720eaa
PR02000201009JN300
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Diameter: 3.9mm
Length: 12mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: power metal
Body dimensions: Ø3.9x12mm
auf Bestellung 2290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.24 EUR
500+0.15 EUR
550+0.13 EUR
Mindestbestellmenge: 300
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PR02000201009JA100 pr010203.pdf
PR02000201009JA100
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x10mm; 250ppm/°C
Mounting: THT
Diameter: 3.9mm
Length: 10mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: metal film
Body dimensions: Ø3.9x10mm
auf Bestellung 1585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
447+0.16 EUR
517+0.14 EUR
575+0.12 EUR
641+0.11 EUR
739+0.097 EUR
824+0.087 EUR
1000+0.078 EUR
Mindestbestellmenge: 278
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TCMT1600 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AEF36FD58FBA7E27&compId=TCMTX60X-DTE.pdf?ci_sign=de8bc37f093d07d48ab144b31caa4d29520460ca
TCMT1600
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: Mini-flat 4pin
Turn-on time: 6µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 80-300%@5mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5µs
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
130+0.55 EUR
179+0.4 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 97
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TS63Y102KT20 TS63.pdf
TS63Y102KT20
+1
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.85x6.85x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Track material: cermet
Kind of potentiometer: horizontal; multiturn
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
24+3.09 EUR
50+2.87 EUR
200+2.69 EUR
500+2.62 EUR
Mindestbestellmenge: 17
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WSL2512R1000FEA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BDE7373FBE4371BF&compId=wsl.pdf?ci_sign=31a158112628ae78e76ed7d0d814a84fdfe5b05a
WSL2512R1000FEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 3611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
180+0.4 EUR
247+0.29 EUR
280+0.26 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WSL2512R1500FEA wsl.pdf
WSL2512R1500FEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.15Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
Mindestbestellmenge: 107
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CNY17-3X009T cny17.pdf
CNY17-3X009T
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
122+0.59 EUR
152+0.47 EUR
168+0.43 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BFC233620473 mkp3362x2.pdf
BFC233620473
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 15mm
Body dimensions: 5x11x17.5mm
Kind of capacitor: X2
Leads: 2pin
Lead length: 3.5mm
Climate class: 55/105/56
auf Bestellung 4028 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
241+0.3 EUR
336+0.21 EUR
379+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 120
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IRLZ34PBF IRLZ34%2CSiHLZ34.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 70mΩ
Gate-source voltage: ±10V
Pulsed drain current: 110A
Gate charge: 35nC
Kind of package: tube
Produkt ist nicht verfügbar
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SIHP10N40D-GE3 sihp10n40d.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 23A
Produkt ist nicht verfügbar
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BFC233868418 mkp3386y2.pdf
BFC233868418
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm
Type of capacitor: polypropylene
Mounting: THT
Kind of capacitor: Y2
Capacitance: 1nF
Terminal pitch: 10mm
Body dimensions: 12.5x4x10mm
Tolerance: ±20%
Operating voltage: 300V AC; 1kV DC
auf Bestellung 1947 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
1400+0.38 EUR
Mindestbestellmenge: 173
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TDCG1060M TDCG1050M.pdf
TDCG1060M
Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Colour: green
Type of display: LED
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Digit height: 10mm; 0.39"
Operating current: 20mA
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Kind of display: 7-segment
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
30+2.42 EUR
48+1.99 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
T18105KT10 t18.pdf
T18105KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Number of electrical turns: 15 ±1
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
Track material: cermet
Kind of potentiometer: multiturn
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
32+2.3 EUR
Mindestbestellmenge: 20
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T93YB105KT20 t93.pdf
T93YB105KT20
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Resistance: 1MΩ
Power: 0.5W
Tolerance: ±10%
Operating voltage: 250V
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.43 EUR
49+1.47 EUR
54+1.34 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
SI2301BDS-T1-E3 si2301bds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ0603A331GXACW1BC vjw1bcbascomseries.pdf
VJ0603A331GXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 330pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.33nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
1429+0.05 EUR
1786+0.04 EUR
1954+0.037 EUR
2348+0.03 EUR
2526+0.028 EUR
2703+0.026 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
IRFDC20PBF sihfdc20.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GRC00KK1022A00L GRC.pdf
GRC00KK1022A00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
47+1.54 EUR
58+1.24 EUR
100+1.12 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ58CA-E3/61 smaj50a.pdf
SMAJ58CA-E3/61
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; bidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 4740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
298+0.24 EUR
360+0.2 EUR
770+0.093 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
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