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MAL204272109E3 MAL204272109E3 VISHAY 041042043ash.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 10uF; 450VDC; Ø12.5x30mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...105°C
Height: 30mm
Diameter: 12.5mm
Leads: axial
Kind of capacitor: low ESR
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
22+3.39 EUR
23+3.22 EUR
25+3.06 EUR
50+2.97 EUR
100+2.9 EUR
200+2.83 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SISS54DN-T1-GE3 VISHAY siss54dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Gate-source voltage: -12...16V
Gate charge: 72nC
On-state resistance: 1.5mΩ
Power dissipation: 42W
Drain-source voltage: 30V
Case: PowerPAK® 1212-8
Drain current: 148.5A
Pulsed drain current: 300A
Produkt ist nicht verfügbar
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CRCW120610K0FKEA CRCW120610K0FKEA VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
auf Bestellung 13672 Stücke:
Lieferzeit 14-21 Tag (e)
879+0.081 EUR
2402+0.03 EUR
3735+0.019 EUR
5544+0.013 EUR
6945+0.01 EUR
9524+0.0075 EUR
10184+0.007 EUR
10549+0.0068 EUR
Mindestbestellmenge: 879
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CRCW120610K0FKTABC CRCW120610K0FKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 18150 Stücke:
Lieferzeit 14-21 Tag (e)
5748+0.012 EUR
6878+0.01 EUR
9653+0.0074 EUR
11683+0.0061 EUR
14165+0.005 EUR
16950+0.0042 EUR
17668+0.004 EUR
Mindestbestellmenge: 5748
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CRCW120610K0JNEA CRCW120610K0JNEA VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
auf Bestellung 4360 Stücke:
Lieferzeit 14-21 Tag (e)
607+0.12 EUR
1425+0.05 EUR
1859+0.038 EUR
2253+0.032 EUR
2733+0.026 EUR
4238+0.017 EUR
4360+0.016 EUR
Mindestbestellmenge: 607
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CRCW120610K0JNTABC CRCW120610K0JNTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
2400+0.03 EUR
6000+0.012 EUR
Mindestbestellmenge: 2400
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SFH6156-2 SFH6156-2 VISHAY SFH6156-2.pdf description Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
auf Bestellung 4214 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
224+0.32 EUR
248+0.29 EUR
265+0.27 EUR
285+0.25 EUR
500+0.21 EUR
1000+0.2 EUR
2000+0.19 EUR
Mindestbestellmenge: 120
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SFH6156-2T SFH6156-2T VISHAY SFH6156-1T.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
auf Bestellung 2043 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
234+0.31 EUR
262+0.27 EUR
278+0.26 EUR
500+0.21 EUR
Mindestbestellmenge: 193
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SFH6156-2X001T SFH6156-2X001T VISHAY SFH6156-2X001T.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
Produkt ist nicht verfügbar
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1N4001-E3/54 1N4001-E3/54 VISHAY 1n400x.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
auf Bestellung 5552 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
705+0.1 EUR
782+0.092 EUR
1055+0.068 EUR
1437+0.05 EUR
1640+0.044 EUR
2500+0.037 EUR
5500+0.032 EUR
Mindestbestellmenge: 556
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BAT54WS-E3-08 BAT54WS-E3-08 VISHAY bat54ws.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Max. load current: 0.3A
Quantity in set/package: 3000pcs.
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
372+0.19 EUR
Mindestbestellmenge: 358
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1N4004-E3/54 1N4004-E3/54 VISHAY 1n400x.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
auf Bestellung 10592 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
582+0.12 EUR
787+0.091 EUR
900+0.08 EUR
1007+0.071 EUR
1134+0.063 EUR
1500+0.058 EUR
2500+0.053 EUR
5500+0.044 EUR
Mindestbestellmenge: 455
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1N4004-E3/73 1N4004-E3/73 VISHAY 1n4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 25720 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
376+0.19 EUR
552+0.13 EUR
720+0.099 EUR
1000+0.089 EUR
3000+0.074 EUR
6000+0.066 EUR
9000+0.062 EUR
24000+0.053 EUR
Mindestbestellmenge: 264
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1N4004GP-E3/54 1N4004GP-E3/54 VISHAY 1n400x.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 2µs
Capacitance: 8pF
Quantity in set/package: 5500pcs.
auf Bestellung 4046 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
119+0.6 EUR
179+0.4 EUR
237+0.3 EUR
500+0.21 EUR
Mindestbestellmenge: 90
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IRF640PBF IRF640PBF VISHAY IRF640PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.02 EUR
52+1.39 EUR
60+1.2 EUR
100+1.1 EUR
250+1.02 EUR
300+1 EUR
500+0.96 EUR
1000+0.89 EUR
Mindestbestellmenge: 36
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IRF640SPBF IRF640SPBF VISHAY IRF640S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 1076 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.46 EUR
47+1.53 EUR
52+1.4 EUR
55+1.32 EUR
100+1.23 EUR
500+1.04 EUR
750+1.02 EUR
1000+1 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRF640STRLPBF IRF640STRLPBF VISHAY IRF640S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAT54A-E3-08 BAT54A-E3-08 VISHAY bat54_bat54a_bat54c_bat54s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
794+0.09 EUR
977+0.073 EUR
1139+0.063 EUR
1223+0.058 EUR
Mindestbestellmenge: 625
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BAT54A-HE3-08 BAT54A-HE3-08 VISHAY Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 1630 Stücke:
Lieferzeit 14-21 Tag (e)
785+0.092 EUR
1245+0.057 EUR
1410+0.051 EUR
Mindestbestellmenge: 785
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BAT54S-E3-08 BAT54S-E3-08 VISHAY bat54-vi.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BAT54S-HE3-08 BAT54S-HE3-08 VISHAY BAT54_A_C_S_Rev1.9_3-16-16.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 3595 Stücke:
Lieferzeit 14-21 Tag (e)
705+0.1 EUR
1115+0.064 EUR
1265+0.057 EUR
3000+0.054 EUR
Mindestbestellmenge: 705
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VS-10BQ100-M3/5BT VS-10BQ100-M3/5BT VISHAY VS-10BQ100-M3-5BT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
auf Bestellung 1965 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
224+0.32 EUR
241+0.3 EUR
293+0.24 EUR
323+0.22 EUR
500+0.17 EUR
1000+0.14 EUR
1300+0.13 EUR
Mindestbestellmenge: 200
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VS-10BQ100HM3/5BT VS-10BQ100HM3/5BT VISHAY vs-10bq100hm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
Mindestbestellmenge: 25
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SMAJ15A-E3/61 SMAJ15A-E3/61 VISHAY smajA-CA_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Technology: TransZorb®
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
410+0.17 EUR
521+0.14 EUR
633+0.11 EUR
774+0.092 EUR
1000+0.073 EUR
1800+0.066 EUR
Mindestbestellmenge: 313
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IRFP240PBF IRFP240PBF VISHAY IRFP240PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Produkt ist nicht verfügbar
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T63XB103KT20 T63XB103KT20 VISHAY t63.pdf Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63XB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 13 ±2
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Track material: cermet
IP rating: IP67
Characteristics: linear
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.09 EUR
20+3.76 EUR
21+3.56 EUR
22+3.29 EUR
24+3.02 EUR
Mindestbestellmenge: 18
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T63YB103KT20 T63YB103KT20 VISHAY t63.pdf Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63YB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 13 ±2
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Track material: cermet
IP rating: IP67
Characteristics: linear
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.69 EUR
31+2.32 EUR
33+2.17 EUR
50+2.06 EUR
100+2 EUR
Mindestbestellmenge: 27
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T93XB103KT20 T93XB103KT20 VISHAY t93.pdf Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Operating voltage: 250V
Engineering PN: 64Z; 67Z; 3296Z
Track material: cermet
IP rating: IP67
Characteristics: linear
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T93YB103KT20 T93YB103KT20 VISHAY t93.pdf Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Operating voltage: 250V
Engineering PN: 64Y; 67Y; 3296Y
Track material: cermet
IP rating: IP67
Characteristics: linear
auf Bestellung 3763 Stücke:
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50+1.44 EUR
57+1.27 EUR
100+1.2 EUR
200+1.1 EUR
500+1.06 EUR
1000+1.02 EUR
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1N5400-E3/54 1N5400-E3/54 VISHAY 1n5400_08.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
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VS-36MT60 VS-36MT60 VISHAY VS-26MT_36MT.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
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5+15.39 EUR
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SIHB12N60E-GE3 SIHB12N60E-GE3 VISHAY sihb12n60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB12N60ET1-GE3 VISHAY doc?91486 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHF12N60E-GE3 VISHAY sihf12n6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP12N60E-GE3 VISHAY sihp12n6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP22N50APBF IRFP22N50APBF VISHAY IRFP22N50APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 277W
Case: TO247AC
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
On-state resistance: 0.23Ω
Drain current: 14A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP250PBF IRFP250PBF VISHAY IRFP250PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
auf Bestellung 289 Stücke:
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25+2.96 EUR
27+2.75 EUR
28+2.62 EUR
30+2.46 EUR
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IRFP260PBF IRFP260PBF VISHAY IRFP260.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 434 Stücke:
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20+3.58 EUR
25+3.2 EUR
50+3.03 EUR
100+2.92 EUR
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IRFP264PBF IRFP264PBF VISHAY irfp264.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1.5KE6.8CA-E3/54 1.5KE6.8CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 489 Stücke:
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120+0.6 EUR
138+0.52 EUR
177+0.4 EUR
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SS34-E3/57T SS34-E3/57T VISHAY ss32_ss36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Kind of package: 7 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
auf Bestellung 720 Stücke:
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152+0.47 EUR
184+0.39 EUR
256+0.28 EUR
291+0.25 EUR
305+0.23 EUR
500+0.2 EUR
Mindestbestellmenge: 152
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SS34-E3/9AT VISHAY ss32_ss36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Kind of package: 13 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 20mA
Max. forward voltage: 0.5V
Produkt ist nicht verfügbar
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MBR20100CT-E3/4W MBR20100CT-E3/4W VISHAY mbr20100.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
auf Bestellung 394 Stücke:
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48+1.52 EUR
54+1.34 EUR
57+1.26 EUR
65+1.12 EUR
70+1.03 EUR
100+0.94 EUR
Mindestbestellmenge: 48
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2N7002K-T1-E3 2N7002K-T1-E3 VISHAY 2n7002k.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4350 Stücke:
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264+0.27 EUR
428+0.17 EUR
585+0.12 EUR
668+0.11 EUR
788+0.091 EUR
890+0.08 EUR
1000+0.072 EUR
3000+0.06 EUR
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2N7002K-T1-GE3 2N7002K-T1-GE3 VISHAY 2n7002k.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4911 Stücke:
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250+0.29 EUR
363+0.2 EUR
518+0.14 EUR
610+0.12 EUR
908+0.079 EUR
3000+0.057 EUR
Mindestbestellmenge: 250
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SIHB15N65E-GE3 VISHAY sihb15n65e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHF15N65E-GE3 VISHAY sihf15n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP15N65E-GE3 VISHAY sihp15n65e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SS16-E3/5AT SS16-E3/5AT VISHAY ss12.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
auf Bestellung 5086 Stücke:
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500+0.14 EUR
569+0.13 EUR
698+0.1 EUR
837+0.086 EUR
1000+0.078 EUR
2500+0.068 EUR
5000+0.064 EUR
Mindestbestellmenge: 500
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SS16-E3/61T SS16-E3/61T VISHAY ss12.pdf description Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
auf Bestellung 4913 Stücke:
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358+0.2 EUR
417+0.17 EUR
455+0.16 EUR
569+0.13 EUR
632+0.11 EUR
827+0.087 EUR
1000+0.076 EUR
1300+0.072 EUR
1800+0.067 EUR
Mindestbestellmenge: 358
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SS16HE3_B/H SS16HE3_B/H VISHAY ss12.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
auf Bestellung 6429 Stücke:
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313+0.23 EUR
376+0.19 EUR
394+0.18 EUR
468+0.15 EUR
527+0.14 EUR
618+0.12 EUR
725+0.099 EUR
1000+0.094 EUR
Mindestbestellmenge: 313
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CRCW0603240RFKTABC CRCW0603240RFKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C
Mounting: SMD
Case - inch: 0603
Resistance: 240Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.1W
Operating voltage: 75V
Case - mm: 1608
Type of resistor: thick film
auf Bestellung 19100 Stücke:
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2200+0.034 EUR
4100+0.018 EUR
6900+0.01 EUR
17200+0.0042 EUR
Mindestbestellmenge: 2200
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IRF840PBF IRF840PBF VISHAY IRF840PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 2256 Stücke:
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36+2.02 EUR
42+1.73 EUR
48+1.52 EUR
62+1.16 EUR
93+0.77 EUR
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BZX55B10-TAP BZX55B10-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
auf Bestellung 29345 Stücke:
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1370+0.052 EUR
2305+0.031 EUR
2605+0.027 EUR
2720+0.026 EUR
Mindestbestellmenge: 1370
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GRC00JG4702W00L GRC00JG4702W00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
auf Bestellung 1317 Stücke:
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57+1.26 EUR
99+0.73 EUR
124+0.58 EUR
150+0.53 EUR
300+0.5 EUR
600+0.49 EUR
Mindestbestellmenge: 57
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GRC00JG3321E00L GRC00JG3321E00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Dimensions: 16x25mm
auf Bestellung 204 Stücke:
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67+1.07 EUR
115+0.62 EUR
143+0.5 EUR
179+0.4 EUR
Mindestbestellmenge: 67
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IRF530PBF IRF530PBF VISHAY IRF530PBF.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Gate charge: 26nC
auf Bestellung 2941 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
113+0.64 EUR
122+0.59 EUR
142+0.51 EUR
148+0.49 EUR
500+0.46 EUR
Mindestbestellmenge: 91
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IRF530SPBF IRF530SPBF VISHAY irf530s.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Gate charge: 26nC
Pulsed drain current: 56A
auf Bestellung 522 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
71+1.02 EUR
100+0.96 EUR
250+0.89 EUR
500+0.84 EUR
Mindestbestellmenge: 64
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BZX55C10-TAP BZX55C10-TAP VISHAY BZX55C10-TAP.pdf description Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 420 Stücke:
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420+0.17 EUR
Mindestbestellmenge: 420
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BZX55C12-TAP BZX55C12-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 8138 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
758+0.094 EUR
1238+0.058 EUR
1548+0.046 EUR
1793+0.04 EUR
2075+0.034 EUR
2500+0.029 EUR
5000+0.027 EUR
Mindestbestellmenge: 556
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MAL204272109E3 041042043ash.pdf
MAL204272109E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 10uF; 450VDC; Ø12.5x30mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...105°C
Height: 30mm
Diameter: 12.5mm
Leads: axial
Kind of capacitor: low ESR
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
22+3.39 EUR
23+3.22 EUR
25+3.06 EUR
50+2.97 EUR
100+2.9 EUR
200+2.83 EUR
Mindestbestellmenge: 16
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SISS54DN-T1-GE3 siss54dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Gate-source voltage: -12...16V
Gate charge: 72nC
On-state resistance: 1.5mΩ
Power dissipation: 42W
Drain-source voltage: 30V
Case: PowerPAK® 1212-8
Drain current: 148.5A
Pulsed drain current: 300A
Produkt ist nicht verfügbar
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CRCW120610K0FKEA dcrcwe3.pdf
CRCW120610K0FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
auf Bestellung 13672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
879+0.081 EUR
2402+0.03 EUR
3735+0.019 EUR
5544+0.013 EUR
6945+0.01 EUR
9524+0.0075 EUR
10184+0.007 EUR
10549+0.0068 EUR
Mindestbestellmenge: 879
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CRCW120610K0FKTABC Data Sheet CRCW_BCe3.pdf
CRCW120610K0FKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 18150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5748+0.012 EUR
6878+0.01 EUR
9653+0.0074 EUR
11683+0.0061 EUR
14165+0.005 EUR
16950+0.0042 EUR
17668+0.004 EUR
Mindestbestellmenge: 5748
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CRCW120610K0JNEA dcrcwe3.pdf
CRCW120610K0JNEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
auf Bestellung 4360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
607+0.12 EUR
1425+0.05 EUR
1859+0.038 EUR
2253+0.032 EUR
2733+0.026 EUR
4238+0.017 EUR
4360+0.016 EUR
Mindestbestellmenge: 607
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CRCW120610K0JNTABC Data Sheet CRCW_BCe3.pdf
CRCW120610K0JNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2400+0.03 EUR
6000+0.012 EUR
Mindestbestellmenge: 2400
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SFH6156-2 description SFH6156-2.pdf
SFH6156-2
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
auf Bestellung 4214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
224+0.32 EUR
248+0.29 EUR
265+0.27 EUR
285+0.25 EUR
500+0.21 EUR
1000+0.2 EUR
2000+0.19 EUR
Mindestbestellmenge: 120
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SFH6156-2T SFH6156-1T.pdf
SFH6156-2T
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
auf Bestellung 2043 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
234+0.31 EUR
262+0.27 EUR
278+0.26 EUR
500+0.21 EUR
Mindestbestellmenge: 193
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SFH6156-2X001T SFH6156-2X001T.pdf
SFH6156-2X001T
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
Produkt ist nicht verfügbar
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1N4001-E3/54 1n400x.pdf
1N4001-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
auf Bestellung 5552 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
705+0.1 EUR
782+0.092 EUR
1055+0.068 EUR
1437+0.05 EUR
1640+0.044 EUR
2500+0.037 EUR
5500+0.032 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BAT54WS-E3-08 bat54ws.pdf
BAT54WS-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Max. load current: 0.3A
Quantity in set/package: 3000pcs.
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
372+0.19 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
1N4004-E3/54 1n400x.pdf
1N4004-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
auf Bestellung 10592 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
582+0.12 EUR
787+0.091 EUR
900+0.08 EUR
1007+0.071 EUR
1134+0.063 EUR
1500+0.058 EUR
2500+0.053 EUR
5500+0.044 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
1N4004-E3/73 1n4001.pdf
1N4004-E3/73
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 25720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
376+0.19 EUR
552+0.13 EUR
720+0.099 EUR
1000+0.089 EUR
3000+0.074 EUR
6000+0.066 EUR
9000+0.062 EUR
24000+0.053 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
1N4004GP-E3/54 1n400x.pdf
1N4004GP-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 2µs
Capacitance: 8pF
Quantity in set/package: 5500pcs.
auf Bestellung 4046 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
119+0.6 EUR
179+0.4 EUR
237+0.3 EUR
500+0.21 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IRF640PBF IRF640PBF.pdf
IRF640PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
52+1.39 EUR
60+1.2 EUR
100+1.1 EUR
250+1.02 EUR
300+1 EUR
500+0.96 EUR
1000+0.89 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF640SPBF IRF640S.pdf
IRF640SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 1076 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
47+1.53 EUR
52+1.4 EUR
55+1.32 EUR
100+1.23 EUR
500+1.04 EUR
750+1.02 EUR
1000+1 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRF640STRLPBF IRF640S.pdf
IRF640STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54A-E3-08 bat54_bat54a_bat54c_bat54s.pdf
BAT54A-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
794+0.09 EUR
977+0.073 EUR
1139+0.063 EUR
1223+0.058 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAT54A-HE3-08
BAT54A-HE3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 1630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
785+0.092 EUR
1245+0.057 EUR
1410+0.051 EUR
Mindestbestellmenge: 785
Im Einkaufswagen  Stück im Wert von  UAH
BAT54S-E3-08 bat54-vi.pdf
BAT54S-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54S-HE3-08 BAT54_A_C_S_Rev1.9_3-16-16.pdf
BAT54S-HE3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 3595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
705+0.1 EUR
1115+0.064 EUR
1265+0.057 EUR
3000+0.054 EUR
Mindestbestellmenge: 705
Im Einkaufswagen  Stück im Wert von  UAH
VS-10BQ100-M3/5BT VS-10BQ100-M3-5BT.pdf
VS-10BQ100-M3/5BT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
auf Bestellung 1965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
224+0.32 EUR
241+0.3 EUR
293+0.24 EUR
323+0.22 EUR
500+0.17 EUR
1000+0.14 EUR
1300+0.13 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
VS-10BQ100HM3/5BT vs-10bq100hm3.pdf
VS-10BQ100HM3/5BT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ15A-E3/61 smajA-CA_ser.pdf
SMAJ15A-E3/61
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Technology: TransZorb®
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
410+0.17 EUR
521+0.14 EUR
633+0.11 EUR
774+0.092 EUR
1000+0.073 EUR
1800+0.066 EUR
Mindestbestellmenge: 313
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IRFP240PBF IRFP240PBF.pdf
IRFP240PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Produkt ist nicht verfügbar
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T63XB103KT20 t63.pdf
T63XB103KT20
Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63XB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 13 ±2
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Track material: cermet
IP rating: IP67
Characteristics: linear
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.09 EUR
20+3.76 EUR
21+3.56 EUR
22+3.29 EUR
24+3.02 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
T63YB103KT20 t63.pdf
T63YB103KT20
Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63YB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 13 ±2
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Track material: cermet
IP rating: IP67
Characteristics: linear
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.69 EUR
31+2.32 EUR
33+2.17 EUR
50+2.06 EUR
100+2 EUR
Mindestbestellmenge: 27
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T93XB103KT20 t93.pdf
T93XB103KT20
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Operating voltage: 250V
Engineering PN: 64Z; 67Z; 3296Z
Track material: cermet
IP rating: IP67
Characteristics: linear
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
57+1.26 EUR
61+1.17 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
T93YB103KT20 t93.pdf
T93YB103KT20
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Operating voltage: 250V
Engineering PN: 64Y; 67Y; 3296Y
Track material: cermet
IP rating: IP67
Characteristics: linear
auf Bestellung 3763 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
46+1.57 EUR
50+1.44 EUR
57+1.27 EUR
100+1.2 EUR
200+1.1 EUR
500+1.06 EUR
1000+1.02 EUR
Mindestbestellmenge: 35
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1N5400-E3/54 1n5400_08.pdf
1N5400-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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VS-36MT60 VS-26MT_36MT.pdf
VS-36MT60
Hersteller: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.39 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHB12N60E-GE3 sihb12n60.pdf
SIHB12N60E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHB12N60ET1-GE3 doc?91486
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHF12N60E-GE3 sihf12n6.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP12N60E-GE3 sihp12n6.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP22N50APBF IRFP22N50APBF.pdf
IRFP22N50APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 277W
Case: TO247AC
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
On-state resistance: 0.23Ω
Drain current: 14A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP250PBF IRFP250PBF.pdf
IRFP250PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
27+2.75 EUR
28+2.62 EUR
30+2.46 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260PBF description IRFP260.pdf
IRFP260PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
25+3.2 EUR
50+3.03 EUR
100+2.92 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFP264PBF irfp264.pdf
IRFP264PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE6.8CA-E3/54 15ke_Ser.pdf
1.5KE6.8CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
138+0.52 EUR
177+0.4 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
SS34-E3/57T ss32_ss36.pdf
SS34-E3/57T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Kind of package: 7 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
184+0.39 EUR
256+0.28 EUR
291+0.25 EUR
305+0.23 EUR
500+0.2 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
SS34-E3/9AT ss32_ss36.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Kind of package: 13 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 20mA
Max. forward voltage: 0.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR20100CT-E3/4W mbr20100.pdf
MBR20100CT-E3/4W
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
54+1.34 EUR
57+1.26 EUR
65+1.12 EUR
70+1.03 EUR
100+0.94 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
2N7002K-T1-E3 2n7002k.pdf
2N7002K-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
428+0.17 EUR
585+0.12 EUR
668+0.11 EUR
788+0.091 EUR
890+0.08 EUR
1000+0.072 EUR
3000+0.06 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
2N7002K-T1-GE3 2n7002k.pdf
2N7002K-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4911 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
363+0.2 EUR
518+0.14 EUR
610+0.12 EUR
908+0.079 EUR
3000+0.057 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SIHB15N65E-GE3 sihb15n65e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHF15N65E-GE3 sihf15n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP15N65E-GE3 sihp15n65e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS16-E3/5AT ss12.pdf
SS16-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
auf Bestellung 5086 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
569+0.13 EUR
698+0.1 EUR
837+0.086 EUR
1000+0.078 EUR
2500+0.068 EUR
5000+0.064 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
SS16-E3/61T description ss12.pdf
SS16-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
auf Bestellung 4913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
417+0.17 EUR
455+0.16 EUR
569+0.13 EUR
632+0.11 EUR
827+0.087 EUR
1000+0.076 EUR
1300+0.072 EUR
1800+0.067 EUR
Mindestbestellmenge: 358
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SS16HE3_B/H ss12.pdf
SS16HE3_B/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
auf Bestellung 6429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
376+0.19 EUR
394+0.18 EUR
468+0.15 EUR
527+0.14 EUR
618+0.12 EUR
725+0.099 EUR
1000+0.094 EUR
Mindestbestellmenge: 313
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CRCW0603240RFKTABC Data Sheet CRCW_BCe3.pdf
CRCW0603240RFKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C
Mounting: SMD
Case - inch: 0603
Resistance: 240Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.1W
Operating voltage: 75V
Case - mm: 1608
Type of resistor: thick film
auf Bestellung 19100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2200+0.034 EUR
4100+0.018 EUR
6900+0.01 EUR
17200+0.0042 EUR
Mindestbestellmenge: 2200
Im Einkaufswagen  Stück im Wert von  UAH
IRF840PBF IRF840PBF.pdf
IRF840PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 2256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
42+1.73 EUR
48+1.52 EUR
62+1.16 EUR
93+0.77 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B10-TAP BZX55C10-TAP.pdf
BZX55B10-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
auf Bestellung 29345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1370+0.052 EUR
2305+0.031 EUR
2605+0.027 EUR
2720+0.026 EUR
Mindestbestellmenge: 1370
Im Einkaufswagen  Stück im Wert von  UAH
GRC00JG4702W00L GRC.pdf
GRC00JG4702W00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
auf Bestellung 1317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
99+0.73 EUR
124+0.58 EUR
150+0.53 EUR
300+0.5 EUR
600+0.49 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
GRC00JG3321E00L GRC.pdf
GRC00JG3321E00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Dimensions: 16x25mm
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
115+0.62 EUR
143+0.5 EUR
179+0.4 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
IRF530PBF description IRF530PBF.pdf
IRF530PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Gate charge: 26nC
auf Bestellung 2941 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
113+0.64 EUR
122+0.59 EUR
142+0.51 EUR
148+0.49 EUR
500+0.46 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IRF530SPBF description irf530s.pdf
IRF530SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Gate charge: 26nC
Pulsed drain current: 56A
auf Bestellung 522 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
71+1.02 EUR
100+0.96 EUR
250+0.89 EUR
500+0.84 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C10-TAP description BZX55C10-TAP.pdf
BZX55C10-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
420+0.17 EUR
Mindestbestellmenge: 420
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C12-TAP BZX55C10-TAP.pdf
BZX55C12-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 8138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
758+0.094 EUR
1238+0.058 EUR
1548+0.046 EUR
1793+0.04 EUR
2075+0.034 EUR
2500+0.029 EUR
5000+0.027 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
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