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SISS26DN-T1-GE3 VISHAY siss26dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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SISS26LDN-T1-GE3 VISHAY siss26ldn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TSSS2600 TSSS2600 VISHAY TSSS2600.pdf Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 5565 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
168+0.43 EUR
187+0.38 EUR
205+0.35 EUR
223+0.32 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 117
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IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
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IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
45+1.6 EUR
48+1.52 EUR
54+1.33 EUR
100+1.27 EUR
250+1.19 EUR
Mindestbestellmenge: 29
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IRF840ASTRLPBF IRF840ASTRLPBF VISHAY irf840as_IRF840al.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
49+1.49 EUR
53+1.36 EUR
56+1.29 EUR
100+1.2 EUR
250+1.12 EUR
500+1.06 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
71+1.02 EUR
75+0.96 EUR
Mindestbestellmenge: 62
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IRF840STRLPBF IRF840STRLPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS40-05-E3-08 BAS40-05-E3-08 VISHAY BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Capacitance: 5pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1831 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
562+0.13 EUR
985+0.073 EUR
1356+0.053 EUR
1511+0.047 EUR
Mindestbestellmenge: 385
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1.5KE27CA-E3/54 1.5KE27CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
197+0.36 EUR
230+0.31 EUR
Mindestbestellmenge: 162
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1N5822-E3/54 1N5822-E3/54 VISHAY 1n5820-22.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
auf Bestellung 2220 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
355+0.2 EUR
417+0.17 EUR
Mindestbestellmenge: 250
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BYV26C-TAP BYV26C-TAP VISHAY byv26.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
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BYV26C-TR BYV26C-TR VISHAY byv26.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
204+0.35 EUR
221+0.32 EUR
246+0.29 EUR
262+0.27 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C27-TAP BZX85C27-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 10351 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
455+0.16 EUR
538+0.13 EUR
815+0.088 EUR
966+0.074 EUR
1169+0.061 EUR
1309+0.055 EUR
1374+0.052 EUR
Mindestbestellmenge: 358
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1.5KE400A-E3/54 1.5KE400A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
171+0.42 EUR
193+0.37 EUR
250+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
IRF740APBF IRF740APBF VISHAY IRF740APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
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IRF740ASPBF IRF740ASPBF VISHAY IRF740A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Produkt ist nicht verfügbar
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IRF740LCPBF IRF740LCPBF VISHAY IRF740LC.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
43+1.69 EUR
47+1.54 EUR
50+1.44 EUR
100+1.36 EUR
250+1.2 EUR
500+1.1 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF IRF740PBF VISHAY IRF740PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
72+1 EUR
74+0.97 EUR
76+0.94 EUR
77+0.93 EUR
100+0.9 EUR
150+0.87 EUR
250+0.83 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF740SPBF IRF740SPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.99 EUR
37+1.94 EUR
41+1.77 EUR
50+1.64 EUR
100+1.53 EUR
250+1.39 EUR
500+1.26 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF740STRLPBF IRF740STRLPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1.5KE18CA-E3/54 1.5KE18CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
166+0.43 EUR
250+0.38 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE180CA-E3/54 1.5KE180CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
117+0.61 EUR
159+0.45 EUR
500+0.37 EUR
1000+0.34 EUR
1400+0.32 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18A-E3/54 1.5KE18A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1326 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
179+0.4 EUR
231+0.31 EUR
253+0.28 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
P6KE200A-E3/54 P6KE200A-E3/54 VISHAY p6ke.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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1N4937-E3/54 1N4937-E3/54 VISHAY 1n400x.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
625+0.11 EUR
687+0.1 EUR
811+0.088 EUR
1021+0.07 EUR
1147+0.062 EUR
2000+0.055 EUR
2500+0.052 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/73 1N4937-E3/73 VISHAY 1n4933.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
auf Bestellung 2593 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
625+0.11 EUR
789+0.091 EUR
942+0.076 EUR
1021+0.07 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C3V6-TAP BZX55C3V6-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 7561 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
676+0.11 EUR
848+0.084 EUR
1471+0.049 EUR
2326+0.031 EUR
Mindestbestellmenge: 500
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BZX85C3V6-TAP BZX85C3V6-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)
550+0.13 EUR
1110+0.065 EUR
1240+0.058 EUR
1260+0.057 EUR
Mindestbestellmenge: 550
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1N5817-E3/54 1N5817-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3080 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
295+0.24 EUR
321+0.22 EUR
434+0.17 EUR
503+0.14 EUR
572+0.13 EUR
1000+0.11 EUR
2000+0.096 EUR
Mindestbestellmenge: 250
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1N5817-E3/73 1N5817-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7464 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
358+0.2 EUR
447+0.16 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/54 1N5819-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
auf Bestellung 1408 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
305+0.23 EUR
334+0.21 EUR
451+0.16 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/73 1N5819-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
auf Bestellung 1604 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
323+0.22 EUR
468+0.15 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 239
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BAV99-E3-08
+1
 		BAV99-E3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 2496 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
705+0.1 EUR
788+0.091 EUR
1025+0.07 EUR
1363+0.052 EUR
1548+0.046 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-HE3-08 BAV99-HE3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10 Stücke:
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1N4007GP-E3/54 1N4007GP-E3/54 VISHAY 1n4001gp.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 12251 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
249+0.29 EUR
275+0.26 EUR
327+0.22 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
P6KE15CA-E3/54 P6KE15CA-E3/54 VISHAY p6ke.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 4023 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
213+0.34 EUR
268+0.27 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 167
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357B0102MXB251S22 357B0102MXB251S22 VISHAY 357.pdf Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Potentiometer features: without limiters
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Linearity tolerance: ±2%
Mechanical durability: 10000000 cycles
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
auf Bestellung 68 Stücke:
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2+43.44 EUR
3+37.88 EUR
10+34.53 EUR
25+32.76 EUR
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357B2102MAB251S22 357B2102MAB251S22 VISHAY 357.pdf Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Linearity tolerance: ±2%
Electrical rotation angle: 340°
Mechanical durability: 10000000 cycles
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
2+41.2 EUR
3+36.35 EUR
10+35.65 EUR
Mindestbestellmenge: 2
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VJ1206A100KXAAC VJ1206A100KXAAC VISHAY vjcommercialseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
310+0.23 EUR
460+0.16 EUR
1000+0.11 EUR
Mindestbestellmenge: 310
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CRCW1206100KFKEA CRCW1206100KFKEA VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷125°C
Resistance: 100kΩ
Tolerance: ±1%
Operating temperature: -55...125°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 7577 Stücke:
Lieferzeit 14-21 Tag (e)
663+0.11 EUR
1425+0.05 EUR
2223+0.032 EUR
2689+0.027 EUR
3425+0.021 EUR
4099+0.017 EUR
4902+0.015 EUR
5435+0.013 EUR
Mindestbestellmenge: 663
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CRCW1206100KFKTABC CRCW1206100KFKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 107199 Stücke:
Lieferzeit 14-21 Tag (e)
6519+0.011 EUR
7452+0.0096 EUR
8432+0.0085 EUR
12377+0.0058 EUR
15674+0.0046 EUR
16892+0.0042 EUR
Mindestbestellmenge: 6519
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SFH6156-3X001T SFH6156-3X001T VISHAY SFH6156-1T.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
CTR@If: 100-200%@10mA
auf Bestellung 439 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
190+0.38 EUR
249+0.29 EUR
309+0.23 EUR
355+0.2 EUR
Mindestbestellmenge: 132
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BAS85-GS08 BAS85-GS08 VISHAY bas85.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Max. load current: 0.3A
auf Bestellung 34730 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
407+0.18 EUR
1005+0.071 EUR
1254+0.057 EUR
1345+0.053 EUR
2500+0.048 EUR
5000+0.046 EUR
12500+0.044 EUR
25000+0.043 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BAS85-GS18 BAS85-GS18 VISHAY bas85.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
auf Bestellung 9762 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
910+0.079 EUR
1191+0.06 EUR
1389+0.051 EUR
1471+0.049 EUR
2500+0.045 EUR
Mindestbestellmenge: 556
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NTCLE100E3472JB0 NTCLE100E3472JB0 VISHAY ntcle100.pdf Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Operating temperature: -40...125°C
Power: 0.5W
Mounting: THT
Material constant B: 3977K
Type of sensor: NTC thermistor
auf Bestellung 2863 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
173+0.41 EUR
188+0.38 EUR
212+0.34 EUR
233+0.31 EUR
253+0.28 EUR
269+0.27 EUR
Mindestbestellmenge: 152
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1.5KE47CA-E3/54 1.5KE47CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
170+0.42 EUR
183+0.39 EUR
190+0.38 EUR
500+0.36 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
SIHA25N50E-GE3 VISHAY siha25n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHB25N50E-GE3 VISHAY sihb25n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG25N50E-GE3 VISHAY sihg25n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP25N50E-GE3 VISHAY tf-sihp25n50e-ge3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR10100-E3/4W MBR10100-E3/4W VISHAY MBR10100-E3-4W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
auf Bestellung 696 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
105+0.68 EUR
Mindestbestellmenge: 81
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BZX85C12-TAP BZX85C12-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
auf Bestellung 593 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
593+0.12 EUR
Mindestbestellmenge: 455
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BZX85C5V1-TAP BZX85C5V1-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
197+0.36 EUR
Mindestbestellmenge: 197
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IRF540PBF IRF540PBF VISHAY IRF540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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IRF540SPBF IRF540SPBF VISHAY irf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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2N7002-T1-GE3
+1
 		2N7002-T1-GE3 VISHAY 2N7002.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
auf Bestellung 1085 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
440+0.16 EUR
485+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 250
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TLLR4400 TLLR4400 VISHAY TLLx440x-DTE.pdf Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 0.63...1.2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
auf Bestellung 1277 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
214+0.33 EUR
265+0.27 EUR
311+0.23 EUR
358+0.2 EUR
410+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 157
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SISS26DN-T1-GE3 siss26dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SISS26LDN-T1-GE3 siss26ldn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSSS2600 TSSS2600.pdf
TSSS2600
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 5565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
168+0.43 EUR
187+0.38 EUR
205+0.35 EUR
223+0.32 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
45+1.6 EUR
48+1.52 EUR
54+1.33 EUR
100+1.27 EUR
250+1.19 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ASTRLPBF irf840as_IRF840al.pdf
IRF840ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
49+1.49 EUR
53+1.36 EUR
56+1.29 EUR
100+1.2 EUR
250+1.12 EUR
500+1.06 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
71+1.02 EUR
75+0.96 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
IRF840STRLPBF IRF840SPBF.pdf
IRF840STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-05-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-05-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Capacitance: 5pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1831 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
562+0.13 EUR
985+0.073 EUR
1356+0.053 EUR
1511+0.047 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE27CA-E3/54 15ke_Ser.pdf
1.5KE27CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
197+0.36 EUR
230+0.31 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
1N5822-E3/54 1n5820-22.pdf
1N5822-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
auf Bestellung 2220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
355+0.2 EUR
417+0.17 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TR description byv26.pdf
BYV26C-TR
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
204+0.35 EUR
221+0.32 EUR
246+0.29 EUR
262+0.27 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C27-TAP BZX85C10-TAP.pdf
BZX85C27-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 10351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
455+0.16 EUR
538+0.13 EUR
815+0.088 EUR
966+0.074 EUR
1169+0.061 EUR
1309+0.055 EUR
1374+0.052 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE400A-E3/54 15ke_Ser.pdf
1.5KE400A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
171+0.42 EUR
193+0.37 EUR
250+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
IRF740APBF IRF740APBF.pdf
IRF740APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF740ASPBF IRF740A.pdf
IRF740ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740LCPBF description IRF740LC.pdf
IRF740LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
43+1.69 EUR
47+1.54 EUR
50+1.44 EUR
100+1.36 EUR
250+1.2 EUR
500+1.1 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF IRF740PBF.pdf
IRF740PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
72+1 EUR
74+0.97 EUR
76+0.94 EUR
77+0.93 EUR
100+0.9 EUR
150+0.87 EUR
250+0.83 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF740SPBF IRF740SPBF.pdf
IRF740SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
37+1.94 EUR
41+1.77 EUR
50+1.64 EUR
100+1.53 EUR
250+1.39 EUR
500+1.26 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF740STRLPBF IRF740SPBF.pdf
IRF740STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18CA-E3/54 15ke_Ser.pdf
1.5KE18CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
166+0.43 EUR
250+0.38 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE180CA-E3/54 15ke_Ser.pdf
1.5KE180CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
117+0.61 EUR
159+0.45 EUR
500+0.37 EUR
1000+0.34 EUR
1400+0.32 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18A-E3/54 15ke_Ser.pdf
1.5KE18A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
179+0.4 EUR
231+0.31 EUR
253+0.28 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
P6KE200A-E3/54 p6ke.pdf
P6KE200A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/54 1n400x.pdf
1N4937-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
625+0.11 EUR
687+0.1 EUR
811+0.088 EUR
1021+0.07 EUR
1147+0.062 EUR
2000+0.055 EUR
2500+0.052 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/73 1n4933.pdf
1N4937-E3/73
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
auf Bestellung 2593 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
625+0.11 EUR
789+0.091 EUR
942+0.076 EUR
1021+0.07 EUR
Mindestbestellmenge: 417
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BZX55C3V6-TAP BZX55C10-TAP.pdf
BZX55C3V6-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 7561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
848+0.084 EUR
1471+0.049 EUR
2326+0.031 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C3V6-TAP BZX85C10-TAP.pdf
BZX85C3V6-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
550+0.13 EUR
1110+0.065 EUR
1240+0.058 EUR
1260+0.057 EUR
Mindestbestellmenge: 550
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/54 1n5817-19.pdf
1N5817-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
295+0.24 EUR
321+0.22 EUR
434+0.17 EUR
503+0.14 EUR
572+0.13 EUR
1000+0.11 EUR
2000+0.096 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/73 1n5817-19.pdf
1N5817-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
358+0.2 EUR
447+0.16 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/54 1n5817-19.pdf
1N5819-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
auf Bestellung 1408 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
334+0.21 EUR
451+0.16 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/73 1n5817-19.pdf
1N5819-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
auf Bestellung 1604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
323+0.22 EUR
468+0.15 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-E3-08 bav99.pdf
BAV99-E3-08
+1
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 2496 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
705+0.1 EUR
788+0.091 EUR
1025+0.07 EUR
1363+0.052 EUR
1548+0.046 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-HE3-08 bav99.pdf
BAV99-HE3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1N4007GP-E3/54 1n4001gp.pdf
1N4007GP-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 12251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
249+0.29 EUR
275+0.26 EUR
327+0.22 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
P6KE15CA-E3/54 p6ke.pdf
P6KE15CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
auf Bestellung 4023 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
213+0.34 EUR
268+0.27 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
357B0102MXB251S22 357.pdf
357B0102MXB251S22
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Potentiometer features: without limiters
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Linearity tolerance: ±2%
Mechanical durability: 10000000 cycles
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.44 EUR
3+37.88 EUR
10+34.53 EUR
25+32.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
357B2102MAB251S22 357.pdf
357B2102MAB251S22
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Linearity tolerance: ±2%
Electrical rotation angle: 340°
Mechanical durability: 10000000 cycles
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.2 EUR
3+36.35 EUR
10+35.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VJ1206A100KXAAC vjcommercialseries.pdf
VJ1206A100KXAAC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
310+0.23 EUR
460+0.16 EUR
1000+0.11 EUR
Mindestbestellmenge: 310
Im Einkaufswagen  Stück im Wert von  UAH
CRCW1206100KFKEA dcrcwe3.pdf
CRCW1206100KFKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷125°C
Resistance: 100kΩ
Tolerance: ±1%
Operating temperature: -55...125°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
auf Bestellung 7577 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
663+0.11 EUR
1425+0.05 EUR
2223+0.032 EUR
2689+0.027 EUR
3425+0.021 EUR
4099+0.017 EUR
4902+0.015 EUR
5435+0.013 EUR
Mindestbestellmenge: 663
Im Einkaufswagen  Stück im Wert von  UAH
CRCW1206100KFKTABC Data Sheet CRCW_BCe3.pdf
CRCW1206100KFKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 107199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6519+0.011 EUR
7452+0.0096 EUR
8432+0.0085 EUR
12377+0.0058 EUR
15674+0.0046 EUR
16892+0.0042 EUR
Mindestbestellmenge: 6519
Im Einkaufswagen  Stück im Wert von  UAH
SFH6156-3X001T SFH6156-1T.pdf
SFH6156-3X001T
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
CTR@If: 100-200%@10mA
auf Bestellung 439 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
190+0.38 EUR
249+0.29 EUR
309+0.23 EUR
355+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
BAS85-GS08 bas85.pdf
BAS85-GS08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Max. load current: 0.3A
auf Bestellung 34730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
407+0.18 EUR
1005+0.071 EUR
1254+0.057 EUR
1345+0.053 EUR
2500+0.048 EUR
5000+0.046 EUR
12500+0.044 EUR
25000+0.043 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BAS85-GS18 bas85.pdf
BAS85-GS18
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
auf Bestellung 9762 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
910+0.079 EUR
1191+0.06 EUR
1389+0.051 EUR
1471+0.049 EUR
2500+0.045 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
NTCLE100E3472JB0 ntcle100.pdf
NTCLE100E3472JB0
Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Operating temperature: -40...125°C
Power: 0.5W
Mounting: THT
Material constant B: 3977K
Type of sensor: NTC thermistor
auf Bestellung 2863 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
173+0.41 EUR
188+0.38 EUR
212+0.34 EUR
233+0.31 EUR
253+0.28 EUR
269+0.27 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE47CA-E3/54 15ke_Ser.pdf
1.5KE47CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
170+0.42 EUR
183+0.39 EUR
190+0.38 EUR
500+0.36 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
SIHA25N50E-GE3 siha25n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHB25N50E-GE3 sihb25n50e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHG25N50E-GE3 sihg25n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP25N50E-GE3 tf-sihp25n50e-ge3.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR10100-E3/4W MBR10100-E3-4W.pdf
MBR10100-E3/4W
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
auf Bestellung 696 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
105+0.68 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C12-TAP BZX85C10-TAP.pdf
BZX85C12-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
auf Bestellung 593 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
593+0.12 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C5V1-TAP BZX85C10-TAP.pdf
BZX85C5V1-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
197+0.36 EUR
Mindestbestellmenge: 197
Im Einkaufswagen  Stück im Wert von  UAH
IRF540PBF IRF540PBF.pdf
IRF540PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540SPBF irf540s.pdf
IRF540SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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2N7002-T1-GE3 2N7002.pdf
2N7002-T1-GE3
+1
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
auf Bestellung 1085 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
440+0.16 EUR
485+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 250
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TLLR4400 TLLx440x-DTE.pdf
TLLR4400
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 0.63...1.2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
auf Bestellung 1277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
214+0.33 EUR
265+0.27 EUR
311+0.23 EUR
358+0.2 EUR
410+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 157
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