| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SIR5708DP-T1-RE3 | VISHAY |
 SIR5708DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR570DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 77.4A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR572DP-T1-RE3 | VISHAY |
SIR572DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR574DP-T1-RE3 | VISHAY | SIR574DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR576DP-T1-RE3 | VISHAY |
SIR576DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR578DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70.2A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR5802DP-T1-RE3 | VISHAY |
SIR5802DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR580DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Pulsed drain current: 300A Power dissipation: 104W Gate charge: 76nC Polarisation: unipolar Technology: TrenchFET® Drain current: 146A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3.2mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR582DP-T1-RE3 | VISHAY |
SIR582DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR584DP-T1-RE3 | VISHAY |
SIR584DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR606BDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 38.7A Pulsed drain current: 80A Power dissipation: 62.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR606DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 37A Pulsed drain current: 100A Power dissipation: 44.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 36.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR608DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 45V Drain current: 208A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR610DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 35.4A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 33.4mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR616DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20.2A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 53.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR618DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 14.2A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14.2A Pulsed drain current: 30A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR622DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 51.6A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR622DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 51.6A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5984 Stücke: Lieferzeit 7-14 Tag (e) |
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| SiR624DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18.6A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR624DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18.6A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR626ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 165A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 165A Pulsed drain current: 300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR626DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 34.2A; 4W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34.2A Power dissipation: 4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIR626LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 186A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SiR632DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 29A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 29A Pulsed drain current: 50A Power dissipation: 69.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIR638ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR638DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 204nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR638DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 204nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR640ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 350A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR662DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 350A; 66.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 350A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR664DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 50W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 150A Power dissipation: 50W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR668ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 93.6A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 93.6A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR668DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR670DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 200A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR680ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 125A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 83nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR680DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 200A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR680LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 130A On-state resistance: 3.55mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 135nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR681DP-T1-RE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -71.9A; 104W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -80V Drain current: -71.9A Pulsed drain current: -125A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.7mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR688DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 100A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 100A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR690DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 34.4A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR690DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 34.4A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR692DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 24.2A Pulsed drain current: 50A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 67mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiR696DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 24.2A Pulsed drain current: 50A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 67mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR698DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.5A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.5A Pulsed drain current: 10A Power dissipation: 23W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR770DP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 35A Power dissipation: 17.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR800ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 177A Pulsed drain current: 150A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR800ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 177A Pulsed drain current: 150A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR800DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 50A Pulsed drain current: 80A Power dissipation: 69W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR800DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 50A Pulsed drain current: 80A Power dissipation: 69W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR804DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.3mΩ Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR818DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 80A; 69W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 80A Power dissipation: 69W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR820DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 27.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR826ADP-T1-GE3 | VISHAY |
SIR826ADP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR826BDP-T1-RE3 | VISHAY |
SIR826BDP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR826DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 100A; 66.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 60A Pulsed drain current: 100A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR826LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 86A Pulsed drain current: 200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR836DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 50A; 10W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Pulsed drain current: 50A Power dissipation: 10W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR846ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR846BDP-T1-RE3 | VISHAY |
SIR846BDP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIR846DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR862DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 50A; Idm: 70A; 69W Power dissipation: 69W Polarisation: unipolar Kind of package: reel; tape Gate charge: 90nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 25V Drain current: 50A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
| SIR5708DP-T1-RE3 |
|
Hersteller: VISHAY
SIR5708DP-T1-RE3 SMD N channel transistors
SIR5708DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR570DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR572DP-T1-RE3 |
|
Hersteller: VISHAY
SIR572DP-T1-RE3 SMD N channel transistors
SIR572DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR574DP-T1-RE3 |
Hersteller: VISHAY
SIR574DP-T1-RE3 SMD N channel transistors
SIR574DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR576DP-T1-RE3 |
|
Hersteller: VISHAY
SIR576DP-T1-RE3 SMD N channel transistors
SIR576DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR578DP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR5802DP-T1-RE3 |
|
Hersteller: VISHAY
SIR5802DP-T1-RE3 SMD N channel transistors
SIR5802DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR580DP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Pulsed drain current: 300A
Power dissipation: 104W
Gate charge: 76nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 146A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2mΩ
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Pulsed drain current: 300A
Power dissipation: 104W
Gate charge: 76nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 146A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR582DP-T1-RE3 |
|
Hersteller: VISHAY
SIR582DP-T1-RE3 SMD N channel transistors
SIR582DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR584DP-T1-RE3 |
|
Hersteller: VISHAY
SIR584DP-T1-RE3 SMD N channel transistors
SIR584DP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR606BDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.7A
Pulsed drain current: 80A
Power dissipation: 62.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.7A
Pulsed drain current: 80A
Power dissipation: 62.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR606DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 100A
Power dissipation: 44.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 100A
Power dissipation: 44.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR608DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 208A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 208A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR610DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33.4mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33.4mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR616DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20.2A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 53.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20.2A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 53.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR618DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 14.2A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14.2A
Pulsed drain current: 30A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 14.2A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14.2A
Pulsed drain current: 30A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR622DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR622DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5984 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.86 EUR |
| 43+ | 1.67 EUR |
| 57+ | 1.26 EUR |
| 60+ | 1.2 EUR |
| 3000+ | 1.16 EUR |
| SiR624DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18.6A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18.6A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR624DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18.6A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18.6A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR626ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 165A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 165A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 165A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 165A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR626DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.2A; 4W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.2A
Power dissipation: 4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.2A; 4W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.2A
Power dissipation: 4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIR626LDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 186A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 186A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SiR632DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 29A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 29A
Pulsed drain current: 50A
Power dissipation: 69.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 29A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 29A
Pulsed drain current: 50A
Power dissipation: 69.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SIR638ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR638DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR638DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR640ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 350A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 350A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR662DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 350A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 350A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 350A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 350A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR664DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 50W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 50W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR668ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 93.6A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 93.6A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 93.6A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 93.6A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR668DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR670DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR680ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 125A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 125A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR680DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 200A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 200A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR680LDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 130A
On-state resistance: 3.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 135nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 130A
On-state resistance: 3.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 135nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR681DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -71.9A; 104W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -71.9A
Pulsed drain current: -125A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -71.9A; 104W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -71.9A
Pulsed drain current: -125A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR688DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 100A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 100A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR690DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR690DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR692DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24.2A
Pulsed drain current: 50A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24.2A
Pulsed drain current: 50A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SiR696DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24.2A
Pulsed drain current: 50A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24.2A
Pulsed drain current: 50A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR698DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Pulsed drain current: 10A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Pulsed drain current: 10A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR770DP-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 35A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 35A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR800ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 177A
Pulsed drain current: 150A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 177A
Pulsed drain current: 150A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR800ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 177A
Pulsed drain current: 150A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 177A
Pulsed drain current: 150A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR800DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 80A
Power dissipation: 69W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 80A
Power dissipation: 69W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR800DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 80A
Power dissipation: 69W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 80A
Power dissipation: 69W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR804DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.3mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.3mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR818DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 80A; 69W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 80A
Power dissipation: 69W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 80A; 69W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 80A
Power dissipation: 69W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR820DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 27.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 27.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR826ADP-T1-GE3 |
|
Hersteller: VISHAY
SIR826ADP-T1-GE3 SMD N channel transistors
SIR826ADP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR826BDP-T1-RE3 |
|
Hersteller: VISHAY
SIR826BDP-T1-RE3 SMD N channel transistors
SIR826BDP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR826DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 100A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 100A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR826LDP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR836DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 50A; 10W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Pulsed drain current: 50A
Power dissipation: 10W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 50A; 10W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Pulsed drain current: 50A
Power dissipation: 10W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR846ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR846BDP-T1-RE3 |
|
Hersteller: VISHAY
SIR846BDP-T1-RE3 SMD N channel transistors
SIR846BDP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
| SIR846DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| SIR862DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 50A; Idm: 70A; 69W
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 25V
Drain current: 50A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 50A; Idm: 70A; 69W
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 25V
Drain current: 50A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar