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SQA411CEJW-T1_GE3 VISHAY sqa411cejw.pdf SQA411CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA413CEJW-T1_GE3 VISHAY sqa413cejw.pdf SQA413CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA470EEJ-T1_GE3 VISHAY sqa470eej.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD100N04-3M6L-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD19P06-60L_GE3 SQD19P06-60L_GE3 VISHAY SQD19P06-60L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD25N15-52_GE3 SQD25N15-52_GE3 VISHAY SQD25N15-52.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD30N05-20L_GE3 VISHAY sqd30n05-20l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD40031EL_GE3 SQD40031EL_GE3 VISHAY SQD40031EL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1972 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.2 EUR
37+ 1.97 EUR
50+ 1.43 EUR
53+ 1.36 EUR
Mindestbestellmenge: 33
SQD40052EL_GE3 VISHAY sqd40052el.pdf SQD40052EL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQD45P03-12_GE3 SQD45P03-12_GE3 VISHAY SQD45P03-12.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N04-4M5L_GE3 SQD50N04-4M5L_GE3 VISHAY SQD50N04-4M5L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N05-11L-GE3 SQD50N05-11L-GE3 VISHAY SQD50N05-11L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50P06-15L_GE3 SQD50P06-15L_GE3 VISHAY sqd50p06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD50P08-28_GE3 VISHAY sqd50p08.pdf SQD50P08-28-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQJ126EP-T1_GE3 VISHAY SQJ126EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ158EP-T1_GE3 VISHAY SQJ158EP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ164ELP-T1_GE3 VISHAY sqj164elp.pdf SQJ164ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ170ELP-T1_GE3 VISHAY sqj170elp.pdf SQJ170ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ402EP-T1_GE3 VISHAY SQJ402EP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ409EP-T1_BE3 VISHAY sqj409ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ422EP-T1_BE3 VISHAY sqj422ep.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431AEP-T1_BE3 VISHAY sqj431aep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431EP-T1_GE3 VISHAY sqj431ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ443EP-T1_GE3 VISHAY sqj443ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ457EP-T1_GE3 VISHAY sqj457ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_BE3 VISHAY sqj459ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_GE3 VISHAY sqj459ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ461EP-T1_GE3 VISHAY sqj461ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ463EP-T1_GE3 VISHAY sqj463ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ465EP-T1_GE3 SQJ465EP-T1_GE3 VISHAY SQJ465EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.56 EUR
51+ 1.42 EUR
64+ 1.13 EUR
68+ 1.06 EUR
500+ 1.04 EUR
Mindestbestellmenge: 46
SQJ476EP-T1_GE3 VISHAY SQJ476Ep.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ481EP-T1_GE3 SQJ481EP-T1_GE3 VISHAY sqj481ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2993 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.19 EUR
74+ 0.97 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 61
SQJ486EP-T1_GE3 VISHAY SQJ486EP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ858AEP-T1_GE3 VISHAY SQJ858AEP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ868EP-T1_GE3 VISHAY sqj868ep.pdf SQJ868EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 VISHAY SQJ974EP-T1-GE3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJA16EP-T1_GE3 VISHAY sqja16ep.pdf SQJA16EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJB70EP-T1_GE3 VISHAY SQJB70EP-T1-GE3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJQ130EL-T1_GE3 VISHAY sqjq130el.pdf SQJQ130EL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJQ184E-T1_GE3 VISHAY SQJQ184E-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJQ900E-T1_GE3 VISHAY SQJQ900E-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQJQ960EL-T1_GE3 VISHAY sqjq960el.pdf SQJQ960EL-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQM100N04-2m7_GE3 SQM100N04-2m7_GE3 VISHAY sqm100n04-2m7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 98A
Power dissipation: 157W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 95.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
SQM100P10-19L_GE3 SQM100P10-19L_GE3 VISHAY SQM100P10-19L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -53A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -53A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQM120N06-3m5L_GE3 SQM120N06-3m5L_GE3 VISHAY SQM120N06-3M5L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQM120N10-3M8_GE3 SQM120N10-3M8_GE3 VISHAY SQM120N10-3M8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 421 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.92 EUR
17+ 4.43 EUR
23+ 3.22 EUR
24+ 3.05 EUR
Mindestbestellmenge: 15
SQM120P06-07L_GE3 VISHAY sqm120p06-07l.pdf SQM120P06-07L-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQS141ELNW-T1_GE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -79A; Idm: -227A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -79A
Pulsed drain current: -227A
Power dissipation: 119W
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQS142ENW-T1_GE3 VISHAY sqs142enw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 110A; Idm: 271A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 271A
Power dissipation: 113W
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQS401EN-T1_GE3 VISHAY sqs401en.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16A; Idm: -64A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 20W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQSA82CENW-T1_GE3 VISHAY sqsa84cenw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 35A; 27W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 35A
Power dissipation: 27W
Gate-source voltage: ±20V
On-state resistance: 97.1mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQSA84CENW-T1_GE3 VISHAY sqsa84cenw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 16A; Idm: 54A; 27W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 16A
Pulsed drain current: 54A
Power dissipation: 27W
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SS10P3CL-M3/86A VISHAY ss10p3cl.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 5Ax2; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 5A x2
Semiconductor structure: common cathode; double
Capacitance: 560pF
Max. forward voltage: 0.52V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10P6-M3/86A SS10P6-M3/86A VISHAY ss10p5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10P6HM3-A/H VISHAY Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 560pF
Max. forward voltage: 0.67V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH10HM3_A/H VISHAY ss10ph10.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 270pF
Max. forward voltage: 0.88V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH45-M3/86A VISHAY ss10ph45.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH45HM3-A/H VISHAY Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS12-E3/61T SS12-E3/61T VISHAY SS14-E3_61T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3922 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
252+ 0.28 EUR
352+ 0.2 EUR
479+ 0.15 EUR
958+ 0.075 EUR
1013+ 0.071 EUR
Mindestbestellmenge: 179
SS14-E3/5AT SS14-E3/5AT VISHAY ss12.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 9370 Stücke:
Lieferzeit 7-14 Tag (e)
660+0.11 EUR
755+ 0.095 EUR
965+ 0.074 EUR
1020+ 0.07 EUR
Mindestbestellmenge: 660
SQA411CEJW-T1_GE3 sqa411cejw.pdf
Hersteller: VISHAY
SQA411CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA413CEJW-T1_GE3 sqa413cejw.pdf
Hersteller: VISHAY
SQA413CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA470EEJ-T1_GE3 sqa470eej.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD100N04-3M6L-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD19P06-60L_GE3 SQD19P06-60L.pdf
SQD19P06-60L_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD25N15-52_GE3 SQD25N15-52.pdf
SQD25N15-52_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD30N05-20L_GE3 sqd30n05-20l.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD40031EL_GE3 SQD40031EL.pdf
SQD40031EL_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1972 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.2 EUR
37+ 1.97 EUR
50+ 1.43 EUR
53+ 1.36 EUR
Mindestbestellmenge: 33
SQD40052EL_GE3 sqd40052el.pdf
Hersteller: VISHAY
SQD40052EL-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQD45P03-12_GE3 SQD45P03-12.pdf
SQD45P03-12_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N04-4M5L_GE3 SQD50N04-4M5L.pdf
SQD50N04-4M5L_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N05-11L-GE3 SQD50N05-11L.pdf
SQD50N05-11L-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50P06-15L_GE3 sqd50p06.pdf
SQD50P06-15L_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD50P08-28_GE3 sqd50p08.pdf
Hersteller: VISHAY
SQD50P08-28-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQJ126EP-T1_GE3
Hersteller: VISHAY
SQJ126EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ158EP-T1_GE3 SQJ158EP.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ164ELP-T1_GE3 sqj164elp.pdf
Hersteller: VISHAY
SQJ164ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ170ELP-T1_GE3 sqj170elp.pdf
Hersteller: VISHAY
SQJ170ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ402EP-T1_GE3 SQJ402EP.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ409EP-T1_BE3 sqj409ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ422EP-T1_BE3 sqj422ep.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431AEP-T1_BE3 sqj431aep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431EP-T1_GE3 sqj431ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ443EP-T1_GE3 sqj443ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ457EP-T1_GE3 sqj457ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_BE3 sqj459ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_GE3 sqj459ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ461EP-T1_GE3 sqj461ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ463EP-T1_GE3 sqj463ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ465EP-T1_GE3 SQJ465EP.pdf
SQJ465EP-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
51+ 1.42 EUR
64+ 1.13 EUR
68+ 1.06 EUR
500+ 1.04 EUR
Mindestbestellmenge: 46
SQJ476EP-T1_GE3 SQJ476Ep.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ481EP-T1_GE3 sqj481ep.pdf
SQJ481EP-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2993 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.19 EUR
74+ 0.97 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 61
SQJ486EP-T1_GE3 SQJ486EP.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ858AEP-T1_GE3 SQJ858AEP.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ868EP-T1_GE3 sqj868ep.pdf
Hersteller: VISHAY
SQJ868EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 SQJ974EP-T1-GE3.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJA16EP-T1_GE3 sqja16ep.pdf
Hersteller: VISHAY
SQJA16EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJB70EP-T1_GE3 SQJB70EP-T1-GE3.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJQ130EL-T1_GE3 sqjq130el.pdf
Hersteller: VISHAY
SQJQ130EL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJQ184E-T1_GE3
Hersteller: VISHAY
SQJQ184E-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJQ900E-T1_GE3
Hersteller: VISHAY
SQJQ900E-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQJQ960EL-T1_GE3 sqjq960el.pdf
Hersteller: VISHAY
SQJQ960EL-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQM100N04-2m7_GE3 sqm100n04-2m7.pdf
SQM100N04-2m7_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 98A
Power dissipation: 157W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 95.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
SQM100P10-19L_GE3 SQM100P10-19L.pdf
SQM100P10-19L_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -53A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -53A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQM120N06-3m5L_GE3 SQM120N06-3M5L.pdf
SQM120N06-3m5L_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQM120N10-3M8_GE3 SQM120N10-3M8.pdf
SQM120N10-3M8_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 421 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.92 EUR
17+ 4.43 EUR
23+ 3.22 EUR
24+ 3.05 EUR
Mindestbestellmenge: 15
SQM120P06-07L_GE3 sqm120p06-07l.pdf
Hersteller: VISHAY
SQM120P06-07L-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQS141ELNW-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -79A; Idm: -227A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -79A
Pulsed drain current: -227A
Power dissipation: 119W
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQS142ENW-T1_GE3 sqs142enw.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 110A; Idm: 271A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 271A
Power dissipation: 113W
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQS401EN-T1_GE3 sqs401en.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16A; Idm: -64A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 20W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQSA82CENW-T1_GE3 sqsa84cenw.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 35A; 27W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 35A
Power dissipation: 27W
Gate-source voltage: ±20V
On-state resistance: 97.1mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQSA84CENW-T1_GE3 sqsa84cenw.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 16A; Idm: 54A; 27W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 16A
Pulsed drain current: 54A
Power dissipation: 27W
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SS10P3CL-M3/86A ss10p3cl.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 5Ax2; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 5A x2
Semiconductor structure: common cathode; double
Capacitance: 560pF
Max. forward voltage: 0.52V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10P6-M3/86A ss10p5.pdf
SS10P6-M3/86A
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10P6HM3-A/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 560pF
Max. forward voltage: 0.67V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH10HM3_A/H ss10ph10.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 270pF
Max. forward voltage: 0.88V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH45-M3/86A ss10ph45.pdf
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS10PH45HM3-A/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SS12-E3/61T SS14-E3_61T.pdf
SS12-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3922 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
252+ 0.28 EUR
352+ 0.2 EUR
479+ 0.15 EUR
958+ 0.075 EUR
1013+ 0.071 EUR
Mindestbestellmenge: 179
SS14-E3/5AT ss12.pdf
SS14-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 9370 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
660+0.11 EUR
755+ 0.095 EUR
965+ 0.074 EUR
1020+ 0.07 EUR
Mindestbestellmenge: 660
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