Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SQ3419EV-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.9A Pulsed drain current: -27A Power dissipation: 1.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 86mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ3426AEEV-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQ3426EV-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2228 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ3427AEEV-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 1.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 178mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ3427EV-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 178mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2624 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ3457EV-T1_BE3 | VISHAY | SQ3457EV-T1-BE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SQ3457EV-T1_GE3 | VISHAY | SQ3457EV-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SQ3461EV-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.6A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ3481EV-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A Case: TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 70mΩ Power dissipation: 4W Polarisation: unipolar Drain current: -7.5A Drain-source voltage: -30V Gate charge: 23.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQ3493EV-T1_GE3 | VISHAY | SQ3493EV-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SQ4050EY-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W Kind of package: reel; tape Mounting: SMD Drain-source voltage: 40V Drain current: 19A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Gate charge: 51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SQ4153EY-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -14A Power dissipation: 2.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 8.32mΩ Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2475 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ4282EY-T1_BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SQ4284EY-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ4850EY-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.9A Power dissipation: 6.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ4940AEY-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A Kind of package: reel; tape Drain-source voltage: 40V Drain current: 5.3A On-state resistance: 29mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 1.3W Polarisation: unipolar Gate charge: 43nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 448 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ4961EY-T1-GE3 | VISHAY | SQ4961EY-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SQ7414CENW-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W Kind of package: reel; tape Drain-source voltage: 60V Drain current: 18A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 62W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 72A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ9945BEY-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.1A Power dissipation: 4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2014 Stücke: Lieferzeit 7-14 Tag (e) |
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SQA401EEJ-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.55A Power dissipation: 4.5W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 113mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQA405CEJW-T1_GE3 | VISHAY | SQA405CEJW-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SQA411CEJW-T1_GE3 | VISHAY | SQA411CEJW-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SQA413CEJW-T1_GE3 | VISHAY | SQA413CEJW-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SQA470EEJ-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.25A Power dissipation: 13.6W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 56mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQD100N04-3M6L-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 136W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SQD19P06-60L_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Power dissipation: 15W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1492 Stücke: Lieferzeit 7-14 Tag (e) |
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SQD25N15-52_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A Power dissipation: 107W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQD30N05-20L_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Pulsed drain current: 120A Power dissipation: 50W Case: TO252 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SQD40031EL_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -94A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1972 Stücke: Lieferzeit 7-14 Tag (e) |
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SQD40052EL_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 30A; Idm: 120A; 62W Case: TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 62W Polarisation: unipolar Gate charge: 52nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Drain-source voltage: 40V Drain current: 30A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SQD45P03-12_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -37A Power dissipation: 23W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 55.3nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQD50N04-4M5L_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 85nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQD50N05-11L-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 32A Power dissipation: 75W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34.6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQD50P06-15L_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W Case: DPAK; TO252 Kind of package: reel; tape Mounting: SMD Power dissipation: 45W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -200A Drain-source voltage: -60V Drain current: -50A On-state resistance: 32mΩ Type of transistor: P-MOSFET Application: automotive industry Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SQD50P08-28_GE3 | VISHAY | SQD50P08-28-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SQJ126EP-T1_GE3 | VISHAY | SQJ126EP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SQJ158EP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Power dissipation: 45W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ164ELP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 75A; Idm: 130A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 130A Power dissipation: 187W Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ170ELP-T1_GE3 | VISHAY | SQJ170ELP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SQJ402EP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ409EP-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -60A Pulsed drain current: -150A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ422EP-T1_BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W Kind of package: reel; tape On-state resistance: 8.9mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 0.1µC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Drain-source voltage: 40V Drain current: 75A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ431AEP-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -9.4A Pulsed drain current: -60A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 763mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ431EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -12A Pulsed drain current: -40A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 527mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ443EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -23A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ457EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -36A Pulsed drain current: -100A Power dissipation: 22W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 50.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ459EP-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 83W Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ459EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ461EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -30A Pulsed drain current: -120A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ463EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Pulsed drain current: -120A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ465EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2875 Stücke: Lieferzeit 7-14 Tag (e) |
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SQJ476EP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerPAK® SO8 Drain-source voltage: 100V Drain current: 13A On-state resistance: 38mΩ Type of transistor: N-MOSFET Power dissipation: 45W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ481EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -9.2A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2993 Stücke: Lieferzeit 7-14 Tag (e) |
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SQJ486EP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 17A Power dissipation: 56W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ858AEP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ868EP-T1_GE3 | VISHAY | SQJ868EP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SQJ974EP-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 16W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25.5mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2994 Stücke: Lieferzeit 7-14 Tag (e) |
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SQJA16EP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 278A; Idm: 575A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 575A Power dissipation: 500W Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJB70EP-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Power dissipation: 9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJQ130EL-T1_GE3 | VISHAY | SQJQ130EL-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
SQ3419EV-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3426AEEV-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3426EV-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2228 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
68+ | 1.06 EUR |
100+ | 0.72 EUR |
113+ | 0.64 EUR |
130+ | 0.55 EUR |
138+ | 0.52 EUR |
SQ3427AEEV-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3427EV-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2624 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
74+ | 0.97 EUR |
112+ | 0.64 EUR |
124+ | 0.58 EUR |
155+ | 0.46 EUR |
164+ | 0.44 EUR |
3000+ | 0.43 EUR |
12000+ | 0.42 EUR |
SQ3457EV-T1_BE3 |
Hersteller: VISHAY
SQ3457EV-T1-BE3 SMD P channel transistors
SQ3457EV-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3457EV-T1_GE3 |
Hersteller: VISHAY
SQ3457EV-T1-GE3 SMD P channel transistors
SQ3457EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3461EV-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3481EV-T1_BE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 70mΩ
Power dissipation: 4W
Polarisation: unipolar
Drain current: -7.5A
Drain-source voltage: -30V
Gate charge: 23.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 70mΩ
Power dissipation: 4W
Polarisation: unipolar
Drain current: -7.5A
Drain-source voltage: -30V
Gate charge: 23.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3493EV-T1_GE3 |
Hersteller: VISHAY
SQ3493EV-T1-GE3 SMD P channel transistors
SQ3493EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ4050EY-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 19A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 19A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4153EY-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.45 EUR |
33+ | 2.23 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
SQ4282EY-T1_BE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4284EY-T1_GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4850EY-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.9A
Power dissipation: 6.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.9A
Power dissipation: 6.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4940AEY-T1_GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 5.3A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 43nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 5.3A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 43nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 448 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.17 EUR |
69+ | 1.05 EUR |
82+ | 0.87 EUR |
87+ | 0.83 EUR |
500+ | 0.79 EUR |
SQ4961EY-T1-GE3 |
Hersteller: VISHAY
SQ4961EY-T1-GE3 Multi channel transistors
SQ4961EY-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQ7414CENW-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ9945BEY-T1_GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.1A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.1A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2014 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 1.04 EUR |
76+ | 0.95 EUR |
99+ | 0.73 EUR |
105+ | 0.69 EUR |
SQA401EEJ-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQA405CEJW-T1_GE3 |
Hersteller: VISHAY
SQA405CEJW-T1-GE3 SMD P channel transistors
SQA405CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA411CEJW-T1_GE3 |
Hersteller: VISHAY
SQA411CEJW-T1-GE3 SMD P channel transistors
SQA411CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA413CEJW-T1_GE3 |
Hersteller: VISHAY
SQA413CEJW-T1-GE3 SMD P channel transistors
SQA413CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA470EEJ-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD100N04-3M6L-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD19P06-60L_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1492 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.83 EUR |
48+ | 1.49 EUR |
83+ | 0.87 EUR |
88+ | 0.82 EUR |
2000+ | 0.79 EUR |
SQD25N15-52_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD30N05-20L_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD40031EL_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1972 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 2.2 EUR |
37+ | 1.97 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
SQD40052EL_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 30A; Idm: 120A; 62W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 52nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 30A; Idm: 120A; 62W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 52nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD45P03-12_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N04-4M5L_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N05-11L-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50P06-15L_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Case: DPAK; TO252
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -60V
Drain current: -50A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Case: DPAK; TO252
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -60V
Drain current: -50A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD50P08-28_GE3 |
Hersteller: VISHAY
SQD50P08-28-GE3 SMD P channel transistors
SQD50P08-28-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQJ126EP-T1_GE3 |
Hersteller: VISHAY
SQJ126EP-T1-GE3 SMD N channel transistors
SQJ126EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ158EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ164ELP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 75A; Idm: 130A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 130A
Power dissipation: 187W
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 75A; Idm: 130A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 130A
Power dissipation: 187W
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ170ELP-T1_GE3 |
Hersteller: VISHAY
SQJ170ELP-T1-GE3 SMD N channel transistors
SQJ170ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ402EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ409EP-T1_BE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ422EP-T1_BE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431AEP-T1_BE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ443EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ457EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_BE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ461EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ463EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ465EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.56 EUR |
51+ | 1.42 EUR |
64+ | 1.13 EUR |
68+ | 1.06 EUR |
500+ | 1.04 EUR |
SQJ476EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerPAK® SO8
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerPAK® SO8
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ481EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2993 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.19 EUR |
74+ | 0.97 EUR |
103+ | 0.7 EUR |
107+ | 0.67 EUR |
SQJ486EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ858AEP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ868EP-T1_GE3 |
Hersteller: VISHAY
SQJ868EP-T1-GE3 SMD N channel transistors
SQJ868EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2994 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
52+ | 1.4 EUR |
57+ | 1.26 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
SQJA16EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 278A; Idm: 575A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 575A
Power dissipation: 500W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 278A; Idm: 575A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 575A
Power dissipation: 500W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJB70EP-T1_GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJQ130EL-T1_GE3 |
Hersteller: VISHAY
SQJQ130EL-T1-GE3 SMD N channel transistors
SQJQ130EL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar