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SQ3419EV-T1_GE3 SQ3419EV-T1_GE3 VISHAY sq3419ev.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3426AEEV-T1_GE3 VISHAY sq3426eev.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3426EV-T1_GE3 SQ3426EV-T1_GE3 VISHAY sq3426ev.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2228 Stücke:
Lieferzeit 7-14 Tag (e)
68+1.06 EUR
100+ 0.72 EUR
113+ 0.64 EUR
130+ 0.55 EUR
138+ 0.52 EUR
Mindestbestellmenge: 68
SQ3427AEEV-T1_GE3 SQ3427AEEV-T1_GE3 VISHAY sq3427aeev.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3427EV-T1_GE3 SQ3427EV-T1_GE3 VISHAY sq3427ev.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2624 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
112+ 0.64 EUR
124+ 0.58 EUR
155+ 0.46 EUR
164+ 0.44 EUR
3000+ 0.43 EUR
12000+ 0.42 EUR
Mindestbestellmenge: 74
SQ3457EV-T1_BE3 VISHAY SQ3457EV-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3457EV-T1_GE3 VISHAY sq3457ev.pdf SQ3457EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3461EV-T1_GE3 VISHAY SQ3461EV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3481EV-T1_BE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 70mΩ
Power dissipation: 4W
Polarisation: unipolar
Drain current: -7.5A
Drain-source voltage: -30V
Gate charge: 23.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3493EV-T1_GE3 VISHAY sq3493ev.pdf SQ3493EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ4050EY-T1_GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 19A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4153EY-T1_GE3 SQ4153EY-T1_GE3 VISHAY SQ4153EY.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.45 EUR
33+ 2.23 EUR
45+ 1.6 EUR
48+ 1.5 EUR
Mindestbestellmenge: 30
SQ4282EY-T1_BE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4284EY-T1_GE3 SQ4284EY-T1_GE3 VISHAY SQ4284EY.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4850EY-T1_GE3 SQ4850EY-T1_GE3 VISHAY SQ4850EY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.9A
Power dissipation: 6.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4940AEY-T1_GE3 SQ4940AEY-T1_GE3 VISHAY SQ4940AEY.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 5.3A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 43nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 448 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.17 EUR
69+ 1.05 EUR
82+ 0.87 EUR
87+ 0.83 EUR
500+ 0.79 EUR
Mindestbestellmenge: 61
SQ4961EY-T1-GE3 VISHAY SQ4961EY-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQ7414CENW-T1_GE3 VISHAY sq7414cenw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ9945BEY-T1_GE3 SQ9945BEY-T1_GE3 VISHAY SQ9945BEY.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.1A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2014 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
76+ 0.95 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 69
SQA401EEJ-T1_GE3 VISHAY SQA401EEJ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQA405CEJW-T1_GE3 VISHAY sqa405cejw.pdf SQA405CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA411CEJW-T1_GE3 VISHAY sqa411cejw.pdf SQA411CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA413CEJW-T1_GE3 VISHAY sqa413cejw.pdf SQA413CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA470EEJ-T1_GE3 VISHAY sqa470eej.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD100N04-3M6L-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD19P06-60L_GE3 SQD19P06-60L_GE3 VISHAY SQD19P06-60L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1492 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.83 EUR
48+ 1.49 EUR
83+ 0.87 EUR
88+ 0.82 EUR
2000+ 0.79 EUR
Mindestbestellmenge: 40
SQD25N15-52_GE3 SQD25N15-52_GE3 VISHAY SQD25N15-52.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD30N05-20L_GE3 VISHAY sqd30n05-20l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD40031EL_GE3 SQD40031EL_GE3 VISHAY SQD40031EL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1972 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.2 EUR
37+ 1.97 EUR
50+ 1.43 EUR
53+ 1.36 EUR
Mindestbestellmenge: 33
SQD40052EL_GE3 VISHAY sqd40052el.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 30A; Idm: 120A; 62W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 52nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD45P03-12_GE3 SQD45P03-12_GE3 VISHAY SQD45P03-12.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N04-4M5L_GE3 SQD50N04-4M5L_GE3 VISHAY SQD50N04-4M5L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N05-11L-GE3 SQD50N05-11L-GE3 VISHAY SQD50N05-11L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50P06-15L_GE3 SQD50P06-15L_GE3 VISHAY sqd50p06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Case: DPAK; TO252
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -60V
Drain current: -50A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD50P08-28_GE3 VISHAY sqd50p08.pdf SQD50P08-28-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQJ126EP-T1_GE3 VISHAY SQJ126EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ158EP-T1_GE3 VISHAY SQJ158EP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ164ELP-T1_GE3 VISHAY sqj164elp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 75A; Idm: 130A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 130A
Power dissipation: 187W
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ170ELP-T1_GE3 VISHAY sqj170elp.pdf SQJ170ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ402EP-T1_GE3 VISHAY SQJ402EP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ409EP-T1_BE3 VISHAY sqj409ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ422EP-T1_BE3 VISHAY sqj422ep.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431AEP-T1_BE3 VISHAY sqj431aep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431EP-T1_GE3 VISHAY sqj431ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ443EP-T1_GE3 VISHAY sqj443ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ457EP-T1_GE3 VISHAY sqj457ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_BE3 VISHAY sqj459ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_GE3 VISHAY sqj459ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ461EP-T1_GE3 VISHAY sqj461ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ463EP-T1_GE3 VISHAY sqj463ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ465EP-T1_GE3 SQJ465EP-T1_GE3 VISHAY SQJ465EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.56 EUR
51+ 1.42 EUR
64+ 1.13 EUR
68+ 1.06 EUR
500+ 1.04 EUR
Mindestbestellmenge: 46
SQJ476EP-T1_GE3 VISHAY SQJ476Ep.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerPAK® SO8
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ481EP-T1_GE3 SQJ481EP-T1_GE3 VISHAY sqj481ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2993 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.19 EUR
74+ 0.97 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 61
SQJ486EP-T1_GE3 VISHAY SQJ486EP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ858AEP-T1_GE3 VISHAY SQJ858AEP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ868EP-T1_GE3 VISHAY sqj868ep.pdf SQJ868EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 SQJ974EP-T1_GE3 VISHAY SQJ974EP-T1-GE3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2994 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.4 EUR
57+ 1.26 EUR
74+ 0.97 EUR
79+ 0.92 EUR
Mindestbestellmenge: 52
SQJA16EP-T1_GE3 VISHAY sqja16ep.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 278A; Idm: 575A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 575A
Power dissipation: 500W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJB70EP-T1_GE3 VISHAY SQJB70EP-T1-GE3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJQ130EL-T1_GE3 VISHAY sqjq130el.pdf SQJQ130EL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQ3419EV-T1_GE3 sq3419ev.pdf
SQ3419EV-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3426AEEV-T1_GE3 sq3426eev.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3426EV-T1_GE3 sq3426ev.pdf
SQ3426EV-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2228 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
100+ 0.72 EUR
113+ 0.64 EUR
130+ 0.55 EUR
138+ 0.52 EUR
Mindestbestellmenge: 68
SQ3427AEEV-T1_GE3 sq3427aeev.pdf
SQ3427AEEV-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3427EV-T1_GE3 sq3427ev.pdf
SQ3427EV-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2624 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
112+ 0.64 EUR
124+ 0.58 EUR
155+ 0.46 EUR
164+ 0.44 EUR
3000+ 0.43 EUR
12000+ 0.42 EUR
Mindestbestellmenge: 74
SQ3457EV-T1_BE3
Hersteller: VISHAY
SQ3457EV-T1-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3457EV-T1_GE3 sq3457ev.pdf
Hersteller: VISHAY
SQ3457EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ3461EV-T1_GE3 SQ3461EV.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ3481EV-T1_BE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 70mΩ
Power dissipation: 4W
Polarisation: unipolar
Drain current: -7.5A
Drain-source voltage: -30V
Gate charge: 23.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQ3493EV-T1_GE3 sq3493ev.pdf
Hersteller: VISHAY
SQ3493EV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQ4050EY-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 19A; Idm: 75A; 6W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 19A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4153EY-T1_GE3 SQ4153EY.pdf
SQ4153EY-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 2.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 8.32mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.45 EUR
33+ 2.23 EUR
45+ 1.6 EUR
48+ 1.5 EUR
Mindestbestellmenge: 30
SQ4282EY-T1_BE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SQ4284EY-T1_GE3 SQ4284EY.pdf
SQ4284EY-T1_GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4850EY-T1_GE3 SQ4850EY.pdf
SQ4850EY-T1_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.9A; 6.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.9A
Power dissipation: 6.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ4940AEY-T1_GE3 SQ4940AEY.pdf
SQ4940AEY-T1_GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 5.3A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 43nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 448 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.17 EUR
69+ 1.05 EUR
82+ 0.87 EUR
87+ 0.83 EUR
500+ 0.79 EUR
Mindestbestellmenge: 61
SQ4961EY-T1-GE3
Hersteller: VISHAY
SQ4961EY-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SQ7414CENW-T1_GE3 sq7414cenw.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ9945BEY-T1_GE3 SQ9945BEY.pdf
SQ9945BEY-T1_GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.1A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2014 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
76+ 0.95 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 69
SQA401EEJ-T1_GE3 SQA401EEJ.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQA405CEJW-T1_GE3 sqa405cejw.pdf
Hersteller: VISHAY
SQA405CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA411CEJW-T1_GE3 sqa411cejw.pdf
Hersteller: VISHAY
SQA411CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA413CEJW-T1_GE3 sqa413cejw.pdf
Hersteller: VISHAY
SQA413CEJW-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQA470EEJ-T1_GE3 sqa470eej.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD100N04-3M6L-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 136W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD19P06-60L_GE3 SQD19P06-60L.pdf
SQD19P06-60L_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1492 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.83 EUR
48+ 1.49 EUR
83+ 0.87 EUR
88+ 0.82 EUR
2000+ 0.79 EUR
Mindestbestellmenge: 40
SQD25N15-52_GE3 SQD25N15-52.pdf
SQD25N15-52_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD30N05-20L_GE3 sqd30n05-20l.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD40031EL_GE3 SQD40031EL.pdf
SQD40031EL_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1972 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.2 EUR
37+ 1.97 EUR
50+ 1.43 EUR
53+ 1.36 EUR
Mindestbestellmenge: 33
SQD40052EL_GE3 sqd40052el.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 30A; Idm: 120A; 62W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 52nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD45P03-12_GE3 SQD45P03-12.pdf
SQD45P03-12_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N04-4M5L_GE3 SQD50N04-4M5L.pdf
SQD50N04-4M5L_GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50N05-11L-GE3 SQD50N05-11L.pdf
SQD50N05-11L-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 32A
Power dissipation: 75W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQD50P06-15L_GE3 sqd50p06.pdf
SQD50P06-15L_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W
Case: DPAK; TO252
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
Drain-source voltage: -60V
Drain current: -50A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SQD50P08-28_GE3 sqd50p08.pdf
Hersteller: VISHAY
SQD50P08-28-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SQJ126EP-T1_GE3
Hersteller: VISHAY
SQJ126EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ158EP-T1_GE3 SQJ158EP.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ164ELP-T1_GE3 sqj164elp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 75A; Idm: 130A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 130A
Power dissipation: 187W
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ170ELP-T1_GE3 sqj170elp.pdf
Hersteller: VISHAY
SQJ170ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ402EP-T1_GE3 SQJ402EP.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ409EP-T1_BE3 sqj409ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ422EP-T1_BE3 sqj422ep.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431AEP-T1_BE3 sqj431aep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ431EP-T1_GE3 sqj431ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ443EP-T1_GE3 sqj443ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ457EP-T1_GE3 sqj457ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_BE3 sqj459ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ459EP-T1_GE3 sqj459ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ461EP-T1_GE3 sqj461ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ463EP-T1_GE3 sqj463ep.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJ465EP-T1_GE3 SQJ465EP.pdf
SQJ465EP-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
51+ 1.42 EUR
64+ 1.13 EUR
68+ 1.06 EUR
500+ 1.04 EUR
Mindestbestellmenge: 46
SQJ476EP-T1_GE3 SQJ476Ep.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerPAK® SO8
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ481EP-T1_GE3 sqj481ep.pdf
SQJ481EP-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2993 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.19 EUR
74+ 0.97 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 61
SQJ486EP-T1_GE3 SQJ486EP.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ858AEP-T1_GE3 SQJ858AEP.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ868EP-T1_GE3 sqj868ep.pdf
Hersteller: VISHAY
SQJ868EP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 SQJ974EP-T1-GE3.pdf
SQJ974EP-T1_GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2994 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.4 EUR
57+ 1.26 EUR
74+ 0.97 EUR
79+ 0.92 EUR
Mindestbestellmenge: 52
SQJA16EP-T1_GE3 sqja16ep.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 278A; Idm: 575A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 575A
Power dissipation: 500W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SQJB70EP-T1_GE3 SQJB70EP-T1-GE3.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJQ130EL-T1_GE3 sqjq130el.pdf
Hersteller: VISHAY
SQJQ130EL-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
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