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C3M0040120K Wolfspeed(CREE) Wolfspeed_C3M0040120K_data_sheet.pdf C3M0040120K THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
3+26.38 EUR
5+14.47 EUR
6+13.69 EUR
Mindestbestellmenge: 3
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C3M0060065J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE324376D260C7&compId=C3M0060065J.pdf?ci_sign=953fac17f6be9c202c55c1a2bed92d206fbffa48 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Drain-source voltage: 650V
Technology: C3M™; SiC
Produkt ist nicht verfügbar
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C3M0060065K Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE3B5C3D84E0C7&compId=C3M0060065K.pdf?ci_sign=7bd6ebe8302a97f3d782690fd3eab12d91af64ff Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Technology: C3M™; SiC
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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C3M0065090D C3M0065090D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD718264A622469&compId=C3M0065090D.pdf?ci_sign=fde0daf9047d08d1a65bc5ea94c32c1a17dd60c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.18 EUR
5+19.05 EUR
10+17.85 EUR
30+17.09 EUR
Mindestbestellmenge: 4
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C3M0065090D C3M0065090D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD718264A622469&compId=C3M0065090D.pdf?ci_sign=fde0daf9047d08d1a65bc5ea94c32c1a17dd60c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
4+21.18 EUR
5+19.05 EUR
10+17.85 EUR
30+17.09 EUR
Mindestbestellmenge: 4
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C3M0065090J C3M0065090J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD7144ECC456469&compId=C3M0065090J.pdf?ci_sign=69c68af5243345ffa929c454a0a4ce08d0038760 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
5+16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C3M0065090J C3M0065090J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD7144ECC456469&compId=C3M0065090J.pdf?ci_sign=69c68af5243345ffa929c454a0a4ce08d0038760 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
5+16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C3M0065090J-TR C3M0065090J-TR Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7BE615288B5274A&compId=C3M0065090J.pdf?ci_sign=07eabd01493bcf13c325a05201d18b1419128c7b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
Produkt ist nicht verfügbar
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C3M0075120D C3M0075120D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE4421F6CA20C7&compId=c3m0075120d.pdf?ci_sign=4c2ea1493f3c8949a3ea77f9162d43dc7bd0cac5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Drain current: 19.7A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Pulsed drain current: 80A
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.37 EUR
5+14.6 EUR
6+13.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
C3M0075120D C3M0075120D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE4421F6CA20C7&compId=c3m0075120d.pdf?ci_sign=4c2ea1493f3c8949a3ea77f9162d43dc7bd0cac5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Drain current: 19.7A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
3+24.37 EUR
5+14.6 EUR
6+13.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
C3M0075120J C3M0075120J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8BCB34104E1074A&compId=C3M0075120J.pdf?ci_sign=7b0b30cfe1d0c075abd16bebfc1880f04efdedbc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.53 EUR
5+15.09 EUR
Mindestbestellmenge: 4
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C3M0075120J C3M0075120J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8BCB34104E1074A&compId=C3M0075120J.pdf?ci_sign=7b0b30cfe1d0c075abd16bebfc1880f04efdedbc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
4+20.53 EUR
5+15.09 EUR
50+14.67 EUR
500+14.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120090D C3M0120090D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF04C960EF31BF&compId=C3M0120090D-DTE.pdf?ci_sign=b6de96e852929b9963d0f9edee1cbf50d40ddc1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 23A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.68 EUR
30+10.48 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120090D C3M0120090D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF04C960EF31BF&compId=C3M0120090D-DTE.pdf?ci_sign=b6de96e852929b9963d0f9edee1cbf50d40ddc1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 23A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.68 EUR
30+10.48 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120090J C3M0120090J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF05A7818431BF&compId=C3M0120090J-DTE.pdf?ci_sign=a82241ac76a7cb4341ce2cb75b929df080cd7ded Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 24ns
Technology: C3M™; SiC
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.34 EUR
6+11.93 EUR
7+11.27 EUR
10+11.23 EUR
50+10.84 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120090J C3M0120090J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF05A7818431BF&compId=C3M0120090J-DTE.pdf?ci_sign=a82241ac76a7cb4341ce2cb75b929df080cd7ded Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 24ns
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.34 EUR
6+11.93 EUR
7+11.27 EUR
10+11.23 EUR
50+10.84 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120100J C3M0120100J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AA99E471C33D274A&compId=C3M0120100J.pdf?ci_sign=7d2dfed152c90d934ac0e91263da481b3b6216c7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Technology: C3M™; SiC
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.46 EUR
7+11.77 EUR
Mindestbestellmenge: 6
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C3M0120100J C3M0120100J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AA99E471C33D274A&compId=C3M0120100J.pdf?ci_sign=7d2dfed152c90d934ac0e91263da481b3b6216c7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.46 EUR
7+11.77 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
C3M0160120D C3M0160120D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE50A5768EC0C7&compId=C3M0160120D.pdf?ci_sign=edb9e9e6418ea9052476bb84a5c3b4cbb6ff69ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
auf Bestellung 441 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.3 EUR
10+8.35 EUR
30+7.16 EUR
Mindestbestellmenge: 8
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C3M0160120D C3M0160120D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE50A5768EC0C7&compId=C3M0160120D.pdf?ci_sign=edb9e9e6418ea9052476bb84a5c3b4cbb6ff69ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.3 EUR
10+8.35 EUR
30+7.16 EUR
510+6.26 EUR
Mindestbestellmenge: 8
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C3M0280090J C3M0280090J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF0841A2CBB1BF&compId=C3M0280090J-DTE.pdf?ci_sign=88ca97736aa7d9955a7c2277556b0aa39c2517a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Technology: C3M™; SiC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.98 EUR
9+7.95 EUR
Mindestbestellmenge: 8
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C3M0280090J C3M0280090J Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF0841A2CBB1BF&compId=C3M0280090J-DTE.pdf?ci_sign=88ca97736aa7d9955a7c2277556b0aa39c2517a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
8+8.98 EUR
9+7.95 EUR
50+5.32 EUR
Mindestbestellmenge: 8
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C4D02120A C4D02120A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F1B51BF&compId=C4D02120A-DTE.PDF?ci_sign=881f27b355c8c641b46d26cc0bad07ba2c51c1f5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
31+2.32 EUR
36+2.02 EUR
43+1.7 EUR
50+1.53 EUR
100+1.37 EUR
Mindestbestellmenge: 23
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C4D02120A C4D02120A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F1B51BF&compId=C4D02120A-DTE.PDF?ci_sign=881f27b355c8c641b46d26cc0bad07ba2c51c1f5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 670 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.12 EUR
31+2.32 EUR
36+2.02 EUR
43+1.7 EUR
50+1.53 EUR
100+1.37 EUR
Mindestbestellmenge: 23
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C4D02120E C4D02120E Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE580F4112D45014469&compId=C4D02120E.pdf?ci_sign=6a558db1aae32c064aaeb1ef3ed1193836956cea Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.96 EUR
31+2.33 EUR
35+2.07 EUR
44+1.64 EUR
75+1.49 EUR
150+1.43 EUR
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C4D02120E C4D02120E Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE580F4112D45014469&compId=C4D02120E.pdf?ci_sign=6a558db1aae32c064aaeb1ef3ed1193836956cea Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 791 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.96 EUR
31+2.33 EUR
35+2.07 EUR
44+1.64 EUR
75+1.49 EUR
150+1.43 EUR
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C4D05120E Wolfspeed(CREE) Wolfspeed_C4D05120E_data_sheet.pdf C4D05120E SMD Schottky diodes
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.54 EUR
19+3.82 EUR
20+3.6 EUR
Mindestbestellmenge: 10
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C4D10120A C4D10120A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F20D1BF&compId=C4D10120A-DTE.PDF?ci_sign=7bb92391402f1ef6c40cd14568edc5769dd7bf5c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C4D
Power dissipation: 136W
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.31 EUR
10+7.32 EUR
11+6.92 EUR
Mindestbestellmenge: 7
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C4D10120A C4D10120A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F20D1BF&compId=C4D10120A-DTE.PDF?ci_sign=7bb92391402f1ef6c40cd14568edc5769dd7bf5c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C4D
Power dissipation: 136W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.31 EUR
10+7.32 EUR
11+6.92 EUR
50+6.82 EUR
100+6.65 EUR
Mindestbestellmenge: 7
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C4D10120D C4D10120D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F2231BF&compId=C4D10120D-DTE.PDF?ci_sign=68a4300d43e7a2c9a042b9f0d66548b2e760e799 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
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C4D10120D C4D10120D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F2231BF&compId=C4D10120D-DTE.PDF?ci_sign=68a4300d43e7a2c9a042b9f0d66548b2e760e799 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.21 EUR
10+8.31 EUR
30+6.58 EUR
Mindestbestellmenge: 7
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C4D10120E C4D10120E Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F2391BF&compId=C4D10120E-DTE.PDF?ci_sign=ebc5d8f60b140bb3c169cd16b3af24b081e6bdfa Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 170W
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.99 EUR
11+6.54 EUR
75+6.29 EUR
Mindestbestellmenge: 9
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C4D10120E C4D10120E Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F2391BF&compId=C4D10120E-DTE.PDF?ci_sign=ebc5d8f60b140bb3c169cd16b3af24b081e6bdfa Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 170W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.99 EUR
11+6.54 EUR
75+6.29 EUR
Mindestbestellmenge: 9
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C4D15120D Wolfspeed(CREE) Wolfspeed_C4D15120D_data_sheet.pdf C4D15120D THT Schottky diodes
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
5+14.3 EUR
Mindestbestellmenge: 2
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C4D20120A C4D20120A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE580F41582FB702469&compId=C4D20120A.pdf?ci_sign=b649affb025cbb86f7a9e469db650031c84b9882 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 242W
Manufacturer series: C4D
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.77 EUR
10+15.02 EUR
25+13.93 EUR
Mindestbestellmenge: 5
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C4D20120A C4D20120A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE580F41582FB702469&compId=C4D20120A.pdf?ci_sign=b649affb025cbb86f7a9e469db650031c84b9882 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 242W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.77 EUR
10+15.02 EUR
25+13.93 EUR
50+13.57 EUR
Mindestbestellmenge: 5
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C4D20120D C4D20120D Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3D70200131BF&compId=C4D20120D-DTE.PDF?ci_sign=a6ba1a17fbdebbb71ef095d3b3701cc5d4721a17 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 176W
Manufacturer series: C4D
Produkt ist nicht verfügbar
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C4D20120H Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE96D25FD2C0C7&compId=c4d20120h.pdf?ci_sign=9283d57b2162981a88c0f6ba860c7e2f18cabda5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 3V
Max. forward impulse current: 104A
Power dissipation: 106.5W
Manufacturer series: C4D
Produkt ist nicht verfügbar
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C5D10170H Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEB3BD01B340C7&compId=c5d10170h.pdf?ci_sign=1abc45273dcf99a2d6f32bd4fc44340a2bf83dc8 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; 80W; C5D
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Max. forward voltage: 2.5V
Load current: 10A
Max. forward impulse current: 41A
Power dissipation: 80W
Max. off-state voltage: 1.7kV
Manufacturer series: C5D
Produkt ist nicht verfügbar
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C6D04065A C6D04065A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FE3C1C87840C4&compId=c6d04065a.pdf?ci_sign=96514f31e455a17541d4bb7f91042c49e386235a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Power dissipation: 26W
Load current: 4A
Max. off-state voltage: 650V
Manufacturer series: C6D
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.19 EUR
30+2.39 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 23
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C6D04065A C6D04065A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FE3C1C87840C4&compId=c6d04065a.pdf?ci_sign=96514f31e455a17541d4bb7f91042c49e386235a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Power dissipation: 26W
Load current: 4A
Max. off-state voltage: 650V
Manufacturer series: C6D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.19 EUR
30+2.39 EUR
53+1.36 EUR
56+1.29 EUR
1000+1.24 EUR
Mindestbestellmenge: 23
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C6D08065A C6D08065A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEE50ED8DF00C7&compId=c6d08065a.pdf?ci_sign=beb9bebcfbb408a154c38de234334d38dfb6fa1d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
18+3.99 EUR
22+3.37 EUR
Mindestbestellmenge: 16
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C6D08065A C6D08065A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEE50ED8DF00C7&compId=c6d08065a.pdf?ci_sign=beb9bebcfbb408a154c38de234334d38dfb6fa1d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.75 EUR
18+3.99 EUR
22+3.37 EUR
50+2.4 EUR
Mindestbestellmenge: 16
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C6D08065E Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEEFE934E460C7&compId=C6D08065E.pdf?ci_sign=d24caac4d2a93aed0464759272de58a7574eaf03 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 57A
Power dissipation: 37W
Manufacturer series: C6D
Produkt ist nicht verfügbar
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C6D10065A C6D10065A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEFA5BF62E00C7&compId=c6d10065a.pdf?ci_sign=8d86b92f34663fad7ba8246a81225de9f65d7362 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 47W; C6D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 75A
Power dissipation: 47W
Manufacturer series: C6D
Produkt ist nicht verfügbar
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C6D10065E C6D10065E Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDF05666165E0C7&compId=C6D10065E.pdf?ci_sign=2fed657eaad203327cab1189f6ef2e9167f31f69 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 68A
Power dissipation: 43W
Manufacturer series: C6D
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.33 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065E C6D10065E Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDF05666165E0C7&compId=C6D10065E.pdf?ci_sign=2fed657eaad203327cab1189f6ef2e9167f31f69 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 68A
Power dissipation: 43W
Manufacturer series: C6D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.33 EUR
21+3.43 EUR
23+3.25 EUR
150+3.13 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
CAB450M12XM3 Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A1FD5E1321E1E0E1&compId=CAB450M12XM3.pdf?ci_sign=8d503546f669052f5734b3c74a84705e0a0e28b0 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 438A; screw; Idm: 900A; SiC
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...175°C
Gate-source voltage: -4...15V
On-state resistance: 4.7mΩ
Drain current: 438A
Pulsed drain current: 900A
Power dissipation: 1.67kW
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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CAS120M12BM2 CAS120M12BM2 Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA60E1D00BE2469&compId=CAS120M12BM2.pdf?ci_sign=6c509c2605ac641670e5d72a5fce9e583b9b8e93 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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CAS300M12BM2 CAS300M12BM2 Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA619473C5E4469&compId=CAS300M12BM2.pdf?ci_sign=476acf97c80a74106e4d33004ebf6da1823c0367 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 285A; 62MM; screw; Idm: 1.5kA
Case: 62MM
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 5mΩ
Drain current: 285A
Drain-source voltage: 1.2kV
Pulsed drain current: 1.5kA
Power dissipation: 1.66kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CCB016M12GM3T Wolfspeed(CREE) Wolfspeed_CCB016M12GM3_data_sheet.pdf Category: Transistors - Unclassified
Description: CCB016M12GM3T
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+331.09 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060A CSD01060A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAFB56304A0D1BF&compId=CSD01060A-DTE.pdf?ci_sign=456f5a062a1c15eb3742ebe4fdfac316203ca7b4 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 21.4W
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.46 EUR
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060A CSD01060A Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAFB56304A0D1BF&compId=CSD01060A-DTE.pdf?ci_sign=456f5a062a1c15eb3742ebe4fdfac316203ca7b4 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 21.4W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.46 EUR
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
100+1.03 EUR
250+0.96 EUR
500+0.87 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060E CSD01060E Wolfspeed(CREE) pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAFB56304A0D1BF&compId=CSD01060A-DTE.pdf?ci_sign=456f5a062a1c15eb3742ebe4fdfac316203ca7b4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Power dissipation: 21.4W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MOD-PWR-MM-C3M0060065K Wolfspeed(CREE) Wolfspeed_SpeedVal_Kit_TO-247-4_Power_Daughter_Card_User_Guide.pdf Category: Unclassified
Description: MOD-PWR-MM-C3M0060065K
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+205.08 EUR
3+184.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WAS300M12BM2 Wolfspeed(CREE) Category: Unclassified
Description: WAS300M12BM2
auf Bestellung 2761 Stücke:
Lieferzeit 14-21 Tag (e)
1+800.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C3M0040120K Wolfspeed_C3M0040120K_data_sheet.pdf
Hersteller: Wolfspeed(CREE)
C3M0040120K THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+26.38 EUR
5+14.47 EUR
6+13.69 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
C3M0060065J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE324376D260C7&compId=C3M0060065J.pdf?ci_sign=953fac17f6be9c202c55c1a2bed92d206fbffa48
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Drain-source voltage: 650V
Technology: C3M™; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C3M0060065K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE3B5C3D84E0C7&compId=C3M0060065K.pdf?ci_sign=7bd6ebe8302a97f3d782690fd3eab12d91af64ff
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Technology: C3M™; SiC
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C3M0065090D pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD718264A622469&compId=C3M0065090D.pdf?ci_sign=fde0daf9047d08d1a65bc5ea94c32c1a17dd60c2
C3M0065090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.18 EUR
5+19.05 EUR
10+17.85 EUR
30+17.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
C3M0065090D pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD718264A622469&compId=C3M0065090D.pdf?ci_sign=fde0daf9047d08d1a65bc5ea94c32c1a17dd60c2
C3M0065090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 30ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 125W
Drain current: 36A
Drain-source voltage: 900V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+21.18 EUR
5+19.05 EUR
10+17.85 EUR
30+17.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
C3M0065090J pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD7144ECC456469&compId=C3M0065090J.pdf?ci_sign=69c68af5243345ffa929c454a0a4ce08d0038760
C3M0065090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C3M0065090J pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD7144ECC456469&compId=C3M0065090J.pdf?ci_sign=69c68af5243345ffa929c454a0a4ce08d0038760
C3M0065090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C3M0065090J-TR pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7BE615288B5274A&compId=C3M0065090J.pdf?ci_sign=07eabd01493bcf13c325a05201d18b1419128c7b
C3M0065090J-TR
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Gate charge: 30.4nC
On-state resistance: 78mΩ
Power dissipation: 113W
Drain current: 35A
Drain-source voltage: 900V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C3M0075120D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE4421F6CA20C7&compId=c3m0075120d.pdf?ci_sign=4c2ea1493f3c8949a3ea77f9162d43dc7bd0cac5
C3M0075120D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Drain current: 19.7A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Pulsed drain current: 80A
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.37 EUR
5+14.6 EUR
6+13.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
C3M0075120D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE4421F6CA20C7&compId=c3m0075120d.pdf?ci_sign=4c2ea1493f3c8949a3ea77f9162d43dc7bd0cac5
C3M0075120D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 54nC
On-state resistance: 0.105Ω
Drain current: 19.7A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+24.37 EUR
5+14.6 EUR
6+13.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
C3M0075120J pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8BCB34104E1074A&compId=C3M0075120J.pdf?ci_sign=7b0b30cfe1d0c075abd16bebfc1880f04efdedbc
C3M0075120J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.53 EUR
5+15.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
C3M0075120J pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8BCB34104E1074A&compId=C3M0075120J.pdf?ci_sign=7b0b30cfe1d0c075abd16bebfc1880f04efdedbc
C3M0075120J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Technology: C3M™; SiC
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 14nC
Reverse recovery time: 18ns
On-state resistance: 75mΩ
Drain current: 30A
Power dissipation: 113.6W
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+20.53 EUR
5+15.09 EUR
50+14.67 EUR
500+14.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120090D pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF04C960EF31BF&compId=C3M0120090D-DTE.pdf?ci_sign=b6de96e852929b9963d0f9edee1cbf50d40ddc1b
C3M0120090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 23A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.68 EUR
30+10.48 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120090D pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF04C960EF31BF&compId=C3M0120090D-DTE.pdf?ci_sign=b6de96e852929b9963d0f9edee1cbf50d40ddc1b
C3M0120090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 23A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.68 EUR
30+10.48 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120090J pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF05A7818431BF&compId=C3M0120090J-DTE.pdf?ci_sign=a82241ac76a7cb4341ce2cb75b929df080cd7ded
C3M0120090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 24ns
Technology: C3M™; SiC
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.34 EUR
6+11.93 EUR
7+11.27 EUR
10+11.23 EUR
50+10.84 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120090J pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF05A7818431BF&compId=C3M0120090J-DTE.pdf?ci_sign=a82241ac76a7cb4341ce2cb75b929df080cd7ded
C3M0120090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 24ns
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.34 EUR
6+11.93 EUR
7+11.27 EUR
10+11.23 EUR
50+10.84 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120100J pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AA99E471C33D274A&compId=C3M0120100J.pdf?ci_sign=7d2dfed152c90d934ac0e91263da481b3b6216c7
C3M0120100J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Technology: C3M™; SiC
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.46 EUR
7+11.77 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
C3M0120100J pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AA99E471C33D274A&compId=C3M0120100J.pdf?ci_sign=7d2dfed152c90d934ac0e91263da481b3b6216c7
C3M0120100J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.46 EUR
7+11.77 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
C3M0160120D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE50A5768EC0C7&compId=C3M0160120D.pdf?ci_sign=edb9e9e6418ea9052476bb84a5c3b4cbb6ff69ce
C3M0160120D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
auf Bestellung 441 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.3 EUR
10+8.35 EUR
30+7.16 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
C3M0160120D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE50A5768EC0C7&compId=C3M0160120D.pdf?ci_sign=edb9e9e6418ea9052476bb84a5c3b4cbb6ff69ce
C3M0160120D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Mounting: THT
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 38nC
On-state resistance: 256mΩ
Power dissipation: 97W
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.3 EUR
10+8.35 EUR
30+7.16 EUR
510+6.26 EUR
Mindestbestellmenge: 8
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C3M0280090J pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF0841A2CBB1BF&compId=C3M0280090J-DTE.pdf?ci_sign=88ca97736aa7d9955a7c2277556b0aa39c2517a8
C3M0280090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Technology: C3M™; SiC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.98 EUR
9+7.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
C3M0280090J pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAF0841A2CBB1BF&compId=C3M0280090J-DTE.pdf?ci_sign=88ca97736aa7d9955a7c2277556b0aa39c2517a8
C3M0280090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+8.98 EUR
9+7.95 EUR
50+5.32 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
C4D02120A pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F1B51BF&compId=C4D02120A-DTE.PDF?ci_sign=881f27b355c8c641b46d26cc0bad07ba2c51c1f5
C4D02120A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
31+2.32 EUR
36+2.02 EUR
43+1.7 EUR
50+1.53 EUR
100+1.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
C4D02120A pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F1B51BF&compId=C4D02120A-DTE.PDF?ci_sign=881f27b355c8c641b46d26cc0bad07ba2c51c1f5
C4D02120A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 670 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.12 EUR
31+2.32 EUR
36+2.02 EUR
43+1.7 EUR
50+1.53 EUR
100+1.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
C4D02120E pVersion=0046&contRep=ZT&docId=005056AB752F1EE580F4112D45014469&compId=C4D02120E.pdf?ci_sign=6a558db1aae32c064aaeb1ef3ed1193836956cea
C4D02120E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
31+2.33 EUR
35+2.07 EUR
44+1.64 EUR
75+1.49 EUR
150+1.43 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
C4D02120E pVersion=0046&contRep=ZT&docId=005056AB752F1EE580F4112D45014469&compId=C4D02120E.pdf?ci_sign=6a558db1aae32c064aaeb1ef3ed1193836956cea
C4D02120E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 791 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.96 EUR
31+2.33 EUR
35+2.07 EUR
44+1.64 EUR
75+1.49 EUR
150+1.43 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
C4D05120E Wolfspeed_C4D05120E_data_sheet.pdf
Hersteller: Wolfspeed(CREE)
C4D05120E SMD Schottky diodes
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.54 EUR
19+3.82 EUR
20+3.6 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120A pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F20D1BF&compId=C4D10120A-DTE.PDF?ci_sign=7bb92391402f1ef6c40cd14568edc5769dd7bf5c
C4D10120A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C4D
Power dissipation: 136W
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.31 EUR
10+7.32 EUR
11+6.92 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120A pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F20D1BF&compId=C4D10120A-DTE.PDF?ci_sign=7bb92391402f1ef6c40cd14568edc5769dd7bf5c
C4D10120A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C4D
Power dissipation: 136W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.31 EUR
10+7.32 EUR
11+6.92 EUR
50+6.82 EUR
100+6.65 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120D pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F2231BF&compId=C4D10120D-DTE.PDF?ci_sign=68a4300d43e7a2c9a042b9f0d66548b2e760e799
C4D10120D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120D pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F2231BF&compId=C4D10120D-DTE.PDF?ci_sign=68a4300d43e7a2c9a042b9f0d66548b2e760e799
C4D10120D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 187W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 187W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.21 EUR
10+8.31 EUR
30+6.58 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120E pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F2391BF&compId=C4D10120E-DTE.PDF?ci_sign=ebc5d8f60b140bb3c169cd16b3af24b081e6bdfa
C4D10120E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 170W
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.99 EUR
11+6.54 EUR
75+6.29 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120E pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3CB10F2391BF&compId=C4D10120E-DTE.PDF?ci_sign=ebc5d8f60b140bb3c169cd16b3af24b081e6bdfa
C4D10120E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 170W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+7.99 EUR
11+6.54 EUR
75+6.29 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
C4D15120D Wolfspeed_C4D15120D_data_sheet.pdf
Hersteller: Wolfspeed(CREE)
C4D15120D THT Schottky diodes
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+35.75 EUR
5+14.3 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120A pVersion=0046&contRep=ZT&docId=005056AB752F1EE580F41582FB702469&compId=C4D20120A.pdf?ci_sign=b649affb025cbb86f7a9e469db650031c84b9882
C4D20120A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 242W
Manufacturer series: C4D
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.77 EUR
10+15.02 EUR
25+13.93 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120A pVersion=0046&contRep=ZT&docId=005056AB752F1EE580F41582FB702469&compId=C4D20120A.pdf?ci_sign=b649affb025cbb86f7a9e469db650031c84b9882
C4D20120A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; 242W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.8V
Power dissipation: 242W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+16.77 EUR
10+15.02 EUR
25+13.93 EUR
50+13.57 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120D pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3D70200131BF&compId=C4D20120D-DTE.PDF?ci_sign=a6ba1a17fbdebbb71ef095d3b3701cc5d4721a17
C4D20120D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 176W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 176W
Manufacturer series: C4D
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120H pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDE96D25FD2C0C7&compId=c4d20120h.pdf?ci_sign=9283d57b2162981a88c0f6ba860c7e2f18cabda5
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 3V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 3V
Max. forward impulse current: 104A
Power dissipation: 106.5W
Manufacturer series: C4D
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C5D10170H pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEB3BD01B340C7&compId=c5d10170h.pdf?ci_sign=1abc45273dcf99a2d6f32bd4fc44340a2bf83dc8
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; 80W; C5D
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Max. forward voltage: 2.5V
Load current: 10A
Max. forward impulse current: 41A
Power dissipation: 80W
Max. off-state voltage: 1.7kV
Manufacturer series: C5D
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D04065A pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FE3C1C87840C4&compId=c6d04065a.pdf?ci_sign=96514f31e455a17541d4bb7f91042c49e386235a
C6D04065A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Power dissipation: 26W
Load current: 4A
Max. off-state voltage: 650V
Manufacturer series: C6D
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
30+2.39 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
C6D04065A pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FE3C1C87840C4&compId=c6d04065a.pdf?ci_sign=96514f31e455a17541d4bb7f91042c49e386235a
C6D04065A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 26W; C6D
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Power dissipation: 26W
Load current: 4A
Max. off-state voltage: 650V
Manufacturer series: C6D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.19 EUR
30+2.39 EUR
53+1.36 EUR
56+1.29 EUR
1000+1.24 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065A pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEE50ED8DF00C7&compId=c6d08065a.pdf?ci_sign=beb9bebcfbb408a154c38de234334d38dfb6fa1d
C6D08065A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
18+3.99 EUR
22+3.37 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065A pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEE50ED8DF00C7&compId=c6d08065a.pdf?ci_sign=beb9bebcfbb408a154c38de234334d38dfb6fa1d
C6D08065A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.75 EUR
18+3.99 EUR
22+3.37 EUR
50+2.4 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEEFE934E460C7&compId=C6D08065E.pdf?ci_sign=d24caac4d2a93aed0464759272de58a7574eaf03
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 57A
Power dissipation: 37W
Manufacturer series: C6D
Produkt ist nicht verfügbar
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C6D10065A pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDEFA5BF62E00C7&compId=c6d10065a.pdf?ci_sign=8d86b92f34663fad7ba8246a81225de9f65d7362
C6D10065A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 47W; C6D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 75A
Power dissipation: 47W
Manufacturer series: C6D
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDF05666165E0C7&compId=C6D10065E.pdf?ci_sign=2fed657eaad203327cab1189f6ef2e9167f31f69
C6D10065E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 68A
Power dissipation: 43W
Manufacturer series: C6D
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.33 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CDF05666165E0C7&compId=C6D10065E.pdf?ci_sign=2fed657eaad203327cab1189f6ef2e9167f31f69
C6D10065E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 68A
Power dissipation: 43W
Manufacturer series: C6D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.33 EUR
21+3.43 EUR
23+3.25 EUR
150+3.13 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
CAB450M12XM3 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A1FD5E1321E1E0E1&compId=CAB450M12XM3.pdf?ci_sign=8d503546f669052f5734b3c74a84705e0a0e28b0
Hersteller: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 438A; screw; Idm: 900A; SiC
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...175°C
Gate-source voltage: -4...15V
On-state resistance: 4.7mΩ
Drain current: 438A
Pulsed drain current: 900A
Power dissipation: 1.67kW
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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CAS120M12BM2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA60E1D00BE2469&compId=CAS120M12BM2.pdf?ci_sign=6c509c2605ac641670e5d72a5fce9e583b9b8e93
CAS120M12BM2
Hersteller: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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CAS300M12BM2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA619473C5E4469&compId=CAS300M12BM2.pdf?ci_sign=476acf97c80a74106e4d33004ebf6da1823c0367
CAS300M12BM2
Hersteller: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 285A; 62MM; screw; Idm: 1.5kA
Case: 62MM
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 5mΩ
Drain current: 285A
Drain-source voltage: 1.2kV
Pulsed drain current: 1.5kA
Power dissipation: 1.66kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CCB016M12GM3T Wolfspeed_CCB016M12GM3_data_sheet.pdf
Hersteller: Wolfspeed(CREE)
Category: Transistors - Unclassified
Description: CCB016M12GM3T
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+331.09 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060A pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAFB56304A0D1BF&compId=CSD01060A-DTE.pdf?ci_sign=456f5a062a1c15eb3742ebe4fdfac316203ca7b4
CSD01060A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 21.4W
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060A pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAFB56304A0D1BF&compId=CSD01060A-DTE.pdf?ci_sign=456f5a062a1c15eb3742ebe4fdfac316203ca7b4
CSD01060A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 21.4W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.46 EUR
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
100+1.03 EUR
250+0.96 EUR
500+0.87 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060E pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BFAFB56304A0D1BF&compId=CSD01060A-DTE.pdf?ci_sign=456f5a062a1c15eb3742ebe4fdfac316203ca7b4
CSD01060E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Power dissipation: 21.4W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MOD-PWR-MM-C3M0060065K Wolfspeed_SpeedVal_Kit_TO-247-4_Power_Daughter_Card_User_Guide.pdf
Hersteller: Wolfspeed(CREE)
Category: Unclassified
Description: MOD-PWR-MM-C3M0060065K
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+205.08 EUR
3+184.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WAS300M12BM2
Hersteller: Wolfspeed(CREE)
Category: Unclassified
Description: WAS300M12BM2
auf Bestellung 2761 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+800.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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