Produkte > WOLFSPEED(CREE) > Alle Produkte des Herstellers WOLFSPEED(CREE) (165) > Seite 2 nach 3
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C3D10065E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Power dissipation: 150W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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C3D10065E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Power dissipation: 150W Manufacturer series: C3D Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
C3D10065I | Wolfspeed(CREE) |
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auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D12065A | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3D16060D | Wolfspeed(CREE) |
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auf Bestellung 151 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D16065D | Wolfspeed(CREE) | C3D16065D THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3D16065D1 | Wolfspeed(CREE) | C3D16065D1 THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C3D20060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 250W Manufacturer series: C3D |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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C3D20060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 250W Manufacturer series: C3D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D20065D | Wolfspeed(CREE) |
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auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D30065D | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0015065K | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0016120K | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C3M0021120K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 200A Power dissipation: 469W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 38mΩ Mounting: THT Gate charge: 162nC Kind of channel: enhancement Reverse recovery time: 34ns Features of semiconductor devices: Kelvin terminal |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0030090K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 40A Power dissipation: 149W Case: TO247-4 Gate-source voltage: -4...15V On-state resistance: 37mΩ Mounting: THT Gate charge: 87nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 62ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0030090K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 40A Power dissipation: 149W Case: TO247-4 Gate-source voltage: -4...15V On-state resistance: 37mΩ Mounting: THT Gate charge: 87nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 62ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0040120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 101nC Kind of channel: enhancement Reverse recovery time: 75ns |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0040120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 101nC Kind of channel: enhancement Reverse recovery time: 75ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0040120K | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Mounting: THT Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Drain-source voltage: 650V Technology: C3M™; SiC Case: TO247-3 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Mounting: THT Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Drain-source voltage: 650V Technology: C3M™; SiC Case: TO247-3 Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 26A Pulsed drain current: 99A Power dissipation: 136W Drain-source voltage: 650V Technology: C3M™; SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 26A Pulsed drain current: 99A Power dissipation: 136W Drain-source voltage: 650V Technology: C3M™; SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Case: TO247-4 Mounting: THT Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Drain-source voltage: 650V Technology: C3M™; SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Case: TO247-4 Mounting: THT Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Drain-source voltage: 650V Technology: C3M™; SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C3M0065090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 125W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 30.4nC Reverse recovery time: 30ns On-state resistance: 78mΩ Drain current: 36A Drain-source voltage: 900V Kind of channel: enhancement Type of transistor: N-MOSFET |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0065090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 125W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 30.4nC Reverse recovery time: 30ns On-state resistance: 78mΩ Drain current: 36A Drain-source voltage: 900V Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0065090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 35A Power dissipation: 113W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 78mΩ Mounting: SMD Gate charge: 30.4nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 16ns |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0065090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 35A Power dissipation: 113W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 78mΩ Mounting: SMD Gate charge: 30.4nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 16ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0065090J-TR | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0065100J | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0075120D | Wolfspeed(CREE) |
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auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0075120J | Wolfspeed(CREE) |
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auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0075120K | Wolfspeed(CREE) |
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auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0120090D | Wolfspeed(CREE) |
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auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0120090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 17.3nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 24ns |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0120090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 17.3nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 24ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 136 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0120100J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 21.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 16ns |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0120100J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 21.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 16ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0120100K | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0160120D | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0160120J | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0280090D | Wolfspeed(CREE) |
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auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0280090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 50W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 20ns |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0280090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 50W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 20ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0350120D | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0350120J | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C4D02120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C4D |
auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D02120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C4D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 670 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D02120E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C4D Power dissipation: 52W |
auf Bestellung 811 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D02120E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Technology: SiC; Z-Rec® Manufacturer series: C4D Power dissipation: 52W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 811 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D05120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D Mounting: THT Power dissipation: 81W Max. off-state voltage: 1.2kV Manufacturer series: C4D Technology: SiC; Z-Rec® Semiconductor structure: single diode Type of diode: Schottky rectifying Case: TO220-2 Load current: 5A |
auf Bestellung 491 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D05120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D Mounting: THT Power dissipation: 81W Max. off-state voltage: 1.2kV Manufacturer series: C4D Technology: SiC; Z-Rec® Semiconductor structure: single diode Type of diode: Schottky rectifying Case: TO220-2 Load current: 5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 491 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D05120E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Power dissipation: 97W Manufacturer series: C4D |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D05120E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Power dissipation: 97W Manufacturer series: C4D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 177 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D08120A | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C4D08120E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Power dissipation: 137W Manufacturer series: C4D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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C4D08120E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Power dissipation: 137W Manufacturer series: C4D Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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C4D10120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136W Manufacturer series: C4D |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D10120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136W Manufacturer series: C4D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D10065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Power dissipation: 150W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Power dissipation: 150W
Manufacturer series: C3D
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3D10065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Power dissipation: 150W
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Power dissipation: 150W
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3D10065I |
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Hersteller: Wolfspeed(CREE)
C3D10065I THT Schottky diodes
C3D10065I THT Schottky diodes
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.95 EUR |
10+ | 7.15 EUR |
100+ | 4.93 EUR |
C3D12065A |
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Hersteller: Wolfspeed(CREE)
C3D12065A THT Schottky diodes
C3D12065A THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3D16060D |
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Hersteller: Wolfspeed(CREE)
C3D16060D THT Schottky diodes
C3D16060D THT Schottky diodes
auf Bestellung 151 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.74 EUR |
13+ | 5.56 EUR |
14+ | 5.26 EUR |
C3D16065D |
Hersteller: Wolfspeed(CREE)
C3D16065D THT Schottky diodes
C3D16065D THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3D16065D1 |
Hersteller: Wolfspeed(CREE)
C3D16065D1 THT Schottky diodes
C3D16065D1 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3D20060D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.12 EUR |
C3D20060D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.12 EUR |
C3D20065D |
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Hersteller: Wolfspeed(CREE)
C3D20065D THT Schottky diodes
C3D20065D THT Schottky diodes
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.81 EUR |
11+ | 6.52 EUR |
C3D30065D |
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Hersteller: Wolfspeed(CREE)
C3D30065D THT Schottky diodes
C3D30065D THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0015065K |
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Hersteller: Wolfspeed(CREE)
C3M0015065K THT N channel transistors
C3M0015065K THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0016120K |
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Hersteller: Wolfspeed(CREE)
C3M0016120K THT N channel transistors
C3M0016120K THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0021120K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 200A
Power dissipation: 469W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 162nC
Kind of channel: enhancement
Reverse recovery time: 34ns
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 200A
Power dissipation: 469W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 162nC
Kind of channel: enhancement
Reverse recovery time: 34ns
Features of semiconductor devices: Kelvin terminal
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.56 EUR |
C3M0030090K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 62ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 62ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 45.06 EUR |
30+ | 44 EUR |
C3M0030090K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 45.06 EUR |
30+ | 44 EUR |
C3M0040120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.51 EUR |
5+ | 14.47 EUR |
6+ | 13.67 EUR |
C3M0040120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.51 EUR |
5+ | 14.47 EUR |
6+ | 13.67 EUR |
C3M0040120K |
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Hersteller: Wolfspeed(CREE)
C3M0040120K THT N channel transistors
C3M0040120K THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Drain-source voltage: 650V
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Drain-source voltage: 650V
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Drain-source voltage: 650V
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Drain-source voltage: 650V
Technology: C3M™; SiC
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Drain-source voltage: 650V
Technology: C3M™; SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Drain-source voltage: 650V
Technology: C3M™; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Drain-source voltage: 650V
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Drain-source voltage: 650V
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Drain-source voltage: 650V
Technology: C3M™; SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Drain-source voltage: 650V
Technology: C3M™; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Drain-source voltage: 650V
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Drain-source voltage: 650V
Technology: C3M™; SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0065090D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Reverse recovery time: 30ns
On-state resistance: 78mΩ
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Reverse recovery time: 30ns
On-state resistance: 78mΩ
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.5 EUR |
5+ | 17.5 EUR |
30+ | 17 EUR |
C3M0065090D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Reverse recovery time: 30ns
On-state resistance: 78mΩ
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 30.4nC
Reverse recovery time: 30ns
On-state resistance: 78mΩ
Drain current: 36A
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.5 EUR |
5+ | 17.5 EUR |
30+ | 17 EUR |
90+ | 16.83 EUR |
C3M0065090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.6 EUR |
50+ | 15.96 EUR |
C3M0065090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.6 EUR |
50+ | 15.96 EUR |
C3M0065090J-TR |
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Hersteller: Wolfspeed(CREE)
C3M0065090J-TR SMD N channel transistors
C3M0065090J-TR SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0065100J |
![]() |
Hersteller: Wolfspeed(CREE)
C3M0065100J SMD N channel transistors
C3M0065100J SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0075120D |
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Hersteller: Wolfspeed(CREE)
C3M0075120D THT N channel transistors
C3M0075120D THT N channel transistors
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 25.47 EUR |
5+ | 15.12 EUR |
C3M0075120J |
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Hersteller: Wolfspeed(CREE)
C3M0075120J SMD N channel transistors
C3M0075120J SMD N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 23.05 EUR |
5+ | 16.5 EUR |
C3M0075120K |
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Hersteller: Wolfspeed(CREE)
C3M0075120K THT N channel transistors
C3M0075120K THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 17.32 EUR |
7+ | 10.22 EUR |
C3M0120090D |
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Hersteller: Wolfspeed(CREE)
C3M0120090D THT N channel transistors
C3M0120090D THT N channel transistors
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.09 EUR |
7+ | 10.95 EUR |
C3M0120090J |
![]() |
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.31 EUR |
7+ | 11.23 EUR |
10+ | 11.21 EUR |
50+ | 10.8 EUR |
C3M0120090J |
![]() |
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.31 EUR |
7+ | 11.23 EUR |
10+ | 11.21 EUR |
50+ | 10.8 EUR |
C3M0120100J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.41 EUR |
7+ | 11.73 EUR |
C3M0120100J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.41 EUR |
7+ | 11.73 EUR |
C3M0120100K |
![]() |
Hersteller: Wolfspeed(CREE)
C3M0120100K THT N channel transistors
C3M0120100K THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0160120D |
![]() |
Hersteller: Wolfspeed(CREE)
C3M0160120D THT N channel transistors
C3M0160120D THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0160120J |
![]() |
Hersteller: Wolfspeed(CREE)
C3M0160120J SMD N channel transistors
C3M0160120J SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0280090D |
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Hersteller: Wolfspeed(CREE)
C3M0280090D THT N channel transistors
C3M0280090D THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.21 EUR |
13+ | 5.55 EUR |
14+ | 5.23 EUR |
C3M0280090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.95 EUR |
9+ | 7.95 EUR |
C3M0280090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.95 EUR |
9+ | 7.95 EUR |
50+ | 5.29 EUR |
C3M0350120D |
![]() |
Hersteller: Wolfspeed(CREE)
C3M0350120D THT N channel transistors
C3M0350120D THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0350120J |
![]() |
Hersteller: Wolfspeed(CREE)
C3M0350120J SMD N channel transistors
C3M0350120J SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C4D02120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.15 EUR |
27+ | 2.73 EUR |
30+ | 2.46 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
500+ | 1.37 EUR |
C4D02120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 670 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.15 EUR |
27+ | 2.73 EUR |
30+ | 2.46 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
500+ | 1.37 EUR |
C4D02120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 52W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 52W
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.62 EUR |
31+ | 2.37 EUR |
46+ | 1.56 EUR |
49+ | 1.49 EUR |
C4D02120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 52W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Technology: SiC; Z-Rec®
Manufacturer series: C4D
Power dissipation: 52W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 811 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.62 EUR |
31+ | 2.37 EUR |
46+ | 1.56 EUR |
49+ | 1.49 EUR |
C4D05120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Power dissipation: 81W
Max. off-state voltage: 1.2kV
Manufacturer series: C4D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case: TO220-2
Load current: 5A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Power dissipation: 81W
Max. off-state voltage: 1.2kV
Manufacturer series: C4D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case: TO220-2
Load current: 5A
auf Bestellung 491 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.65 EUR |
20+ | 3.75 EUR |
21+ | 3.55 EUR |
100+ | 3.47 EUR |
200+ | 3.42 EUR |
C4D05120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Power dissipation: 81W
Max. off-state voltage: 1.2kV
Manufacturer series: C4D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case: TO220-2
Load current: 5A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Power dissipation: 81W
Max. off-state voltage: 1.2kV
Manufacturer series: C4D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case: TO220-2
Load current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 491 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.65 EUR |
20+ | 3.75 EUR |
21+ | 3.55 EUR |
100+ | 3.47 EUR |
200+ | 3.42 EUR |
C4D05120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 97W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 97W
Manufacturer series: C4D
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.56 EUR |
19+ | 3.8 EUR |
20+ | 3.6 EUR |
75+ | 3.53 EUR |
150+ | 3.47 EUR |
C4D05120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 97W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 97W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.56 EUR |
19+ | 3.8 EUR |
20+ | 3.6 EUR |
75+ | 3.53 EUR |
150+ | 3.47 EUR |
C4D08120A |
![]() |
Hersteller: Wolfspeed(CREE)
C4D08120A THT Schottky diodes
C4D08120A THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C4D08120E |
![]() |
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 137W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 137W
Manufacturer series: C4D
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C4D08120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 137W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 137W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C4D10120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.21 EUR |
10+ | 7.32 EUR |
11+ | 6.92 EUR |
C4D10120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.21 EUR |
10+ | 7.32 EUR |
11+ | 6.92 EUR |
50+ | 6.75 EUR |
100+ | 6.65 EUR |