Produkte > WOLFSPEED(CREE) > Alle Produkte des Herstellers WOLFSPEED(CREE) (155) > Seite 2 nach 3
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C3D12065A | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C3D16060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D Type of diode: Schottky rectifying Case: TO247-3 Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Power dissipation: 100W Manufacturer series: C3D |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
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C3D16060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D Type of diode: Schottky rectifying Case: TO247-3 Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Power dissipation: 100W Manufacturer series: C3D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 141 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D16065D | Wolfspeed(CREE) | C3D16065D THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3D16065D1 | Wolfspeed(CREE) | C3D16065D1 THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C3D20060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Power dissipation: 250W Case: TO247-3 Mounting: THT Load current: 10A x2 Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Manufacturer series: C3D Technology: SiC; Z-Rec® Max. off-state voltage: 0.6kV |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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C3D20060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Power dissipation: 250W Case: TO247-3 Mounting: THT Load current: 10A x2 Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Manufacturer series: C3D Technology: SiC; Z-Rec® Max. off-state voltage: 0.6kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D20065D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W Power dissipation: 250W Case: TO247-3 Mounting: THT Load current: 10A x2 Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Manufacturer series: C3D Technology: SiC; Z-Rec® Max. off-state voltage: 650V |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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C3D20065D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W Power dissipation: 250W Case: TO247-3 Mounting: THT Load current: 10A x2 Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Manufacturer series: C3D Technology: SiC; Z-Rec® Max. off-state voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D30065D | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0015065K | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0016120K | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C3M0030090K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 40A Power dissipation: 149W Case: TO247-4 Gate-source voltage: -4...15V On-state resistance: 37mΩ Mounting: THT Gate charge: 87nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 62ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0030090K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 40A Power dissipation: 149W Case: TO247-4 Gate-source voltage: -4...15V On-state resistance: 37mΩ Mounting: THT Gate charge: 87nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 62ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0040120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Case: TO247-3 Mounting: THT Reverse recovery time: 75ns Drain-source voltage: 1.2kV Drain current: 48A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 326W Polarisation: unipolar Gate charge: 101nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Pulsed drain current: 223A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0040120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Case: TO247-3 Mounting: THT Reverse recovery time: 75ns Drain-source voltage: 1.2kV Drain current: 48A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 326W Polarisation: unipolar Gate charge: 101nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Pulsed drain current: 223A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0040120K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Case: TO247-4 Mounting: THT Reverse recovery time: 30ns Drain-source voltage: 1.2kV Drain current: 48A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 326W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 99nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Pulsed drain current: 223A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0040120K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Case: TO247-4 Mounting: THT Reverse recovery time: 30ns Drain-source voltage: 1.2kV Drain current: 48A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 326W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 99nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Pulsed drain current: 223A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0045065D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065D | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065J | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0060065K | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C3M0065090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Case: TO247-3 Reverse recovery time: 30ns Drain-source voltage: 900V Drain current: 36A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Mounting: THT |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0065090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Case: TO247-3 Reverse recovery time: 30ns Drain-source voltage: 900V Drain current: 36A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0065090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Case: D2PAK-7 Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Mounting: SMD |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0065090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Case: D2PAK-7 Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0065090J-TR | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Case: D2PAK-7 Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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C3M0065090J-TR | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Case: D2PAK-7 Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhancement Gate-source voltage: -8...19V Mounting: SMD Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
C3M0065100J | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C3M0075120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Case: TO247-3 Technology: C3M™; SiC Mounting: THT Power dissipation: 113.6W Gate charge: 54nC Kind of channel: enhancement Gate-source voltage: -8...19V Pulsed drain current: 80A Drain-source voltage: 1.2kV Drain current: 19.7A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0075120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Case: TO247-3 Technology: C3M™; SiC Mounting: THT Power dissipation: 113.6W Gate charge: 54nC Kind of channel: enhancement Gate-source voltage: -8...19V Pulsed drain current: 80A Drain-source voltage: 1.2kV Drain current: 19.7A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0075120J | Wolfspeed(CREE) |
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auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0075120K | Wolfspeed(CREE) |
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auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0120090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Case: TO247-3 Technology: C3M™; SiC Mounting: THT Power dissipation: 97W Gate charge: 17.3nC Kind of channel: enhancement Gate-source voltage: -8...19V Reverse recovery time: 24ns Drain-source voltage: 900V Drain current: 23A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0120090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Case: TO247-3 Technology: C3M™; SiC Mounting: THT Power dissipation: 97W Gate charge: 17.3nC Kind of channel: enhancement Gate-source voltage: -8...19V Reverse recovery time: 24ns Drain-source voltage: 900V Drain current: 23A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0120090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 17.3nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 24ns |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0120090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 17.3nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 24ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 136 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0120100J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 21.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 16ns |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0120100J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 21.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 16ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0120100K | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
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C3M0160120D | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0160120J | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0280090D | Wolfspeed(CREE) |
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auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0280090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 50W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 20ns |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0280090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 50W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 20ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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C3M0350120D | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
C3M0350120J | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C4D02120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D Type of diode: Schottky rectifying Case: TO220-2 Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Power dissipation: 60W Manufacturer series: C4D |
auf Bestellung 1114 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D02120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D Type of diode: Schottky rectifying Case: TO220-2 Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Power dissipation: 60W Manufacturer series: C4D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1114 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D02120E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Power dissipation: 52W Manufacturer series: C4D |
auf Bestellung 851 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D02120E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Power dissipation: 52W Manufacturer series: C4D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 851 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D05120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D Mounting: THT Case: TO220-2 Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Power dissipation: 81W Type of diode: Schottky rectifying Manufacturer series: C4D Technology: SiC; Z-Rec® |
auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D05120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D Mounting: THT Case: TO220-2 Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Power dissipation: 81W Type of diode: Schottky rectifying Manufacturer series: C4D Technology: SiC; Z-Rec® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 521 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D05120E | Wolfspeed(CREE) |
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auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D08120A | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
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C4D08120E | Wolfspeed(CREE) |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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C4D10120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Case: TO220-2 Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Power dissipation: 136W Manufacturer series: C4D |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D10120A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Case: TO220-2 Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Power dissipation: 136W Manufacturer series: C4D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D10120D | Wolfspeed(CREE) |
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auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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C4D10120E | Wolfspeed(CREE) |
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auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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C3D12065A |
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Hersteller: Wolfspeed(CREE)
C3D12065A THT Schottky diodes
C3D12065A THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3D16060D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Case: TO247-3
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Case: TO247-3
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Manufacturer series: C3D
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.88 EUR |
14+ | 5.32 EUR |
15+ | 5.02 EUR |
C3D16060D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Case: TO247-3
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Case: TO247-3
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 141 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.88 EUR |
14+ | 5.32 EUR |
15+ | 5.02 EUR |
C3D16065D |
Hersteller: Wolfspeed(CREE)
C3D16065D THT Schottky diodes
C3D16065D THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3D16065D1 |
Hersteller: Wolfspeed(CREE)
C3D16065D1 THT Schottky diodes
C3D16065D1 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3D20060D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Max. off-state voltage: 0.6kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Max. off-state voltage: 0.6kV
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.54 EUR |
8+ | 9.12 EUR |
C3D20060D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.54 EUR |
8+ | 9.12 EUR |
C3D20065D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Max. off-state voltage: 650V
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.85 EUR |
11+ | 6.56 EUR |
30+ | 6.31 EUR |
C3D20065D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Manufacturer series: C3D
Technology: SiC; Z-Rec®
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.85 EUR |
11+ | 6.56 EUR |
30+ | 6.31 EUR |
C3D30065D |
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Hersteller: Wolfspeed(CREE)
C3D30065D THT Schottky diodes
C3D30065D THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0015065K |
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Hersteller: Wolfspeed(CREE)
C3M0015065K THT N channel transistors
C3M0015065K THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0016120K |
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Hersteller: Wolfspeed(CREE)
C3M0016120K THT N channel transistors
C3M0016120K THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0030090K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 62ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 62ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 45.32 EUR |
C3M0030090K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 45.32 EUR |
C3M0040120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Case: TO247-3
Mounting: THT
Reverse recovery time: 75ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Gate charge: 101nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 223A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Case: TO247-3
Mounting: THT
Reverse recovery time: 75ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Gate charge: 101nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 223A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0040120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Case: TO247-3
Mounting: THT
Reverse recovery time: 75ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Gate charge: 101nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 223A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Case: TO247-3
Mounting: THT
Reverse recovery time: 75ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Gate charge: 101nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 223A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0040120K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Case: TO247-4
Mounting: THT
Reverse recovery time: 30ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 223A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Case: TO247-4
Mounting: THT
Reverse recovery time: 30ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 223A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0040120K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Case: TO247-4
Mounting: THT
Reverse recovery time: 30ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 223A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Case: TO247-4
Mounting: THT
Reverse recovery time: 30ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 223A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0045065D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065D |
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Hersteller: Wolfspeed(CREE)
C3M0060065D THT N channel transistors
C3M0060065D THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065J |
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Hersteller: Wolfspeed(CREE)
C3M0060065J SMD N channel transistors
C3M0060065J SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0060065K |
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Hersteller: Wolfspeed(CREE)
C3M0060065K THT N channel transistors
C3M0060065K THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0065090D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Case: TO247-3
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Case: TO247-3
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: THT
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.18 EUR |
C3M0065090D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Case: TO247-3
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Case: TO247-3
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.18 EUR |
120+ | 17.46 EUR |
C3M0065090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: SMD
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.69 EUR |
10+ | 16.57 EUR |
C3M0065090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.69 EUR |
10+ | 16.57 EUR |
C3M0065090J-TR |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0065090J-TR |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0065100J |
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Hersteller: Wolfspeed(CREE)
C3M0065100J SMD N channel transistors
C3M0065100J SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0075120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Case: TO247-3
Technology: C3M™; SiC
Mounting: THT
Power dissipation: 113.6W
Gate charge: 54nC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 19.7A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Case: TO247-3
Technology: C3M™; SiC
Mounting: THT
Power dissipation: 113.6W
Gate charge: 54nC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 19.7A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 22.64 EUR |
5+ | 15.04 EUR |
6+ | 14.23 EUR |
C3M0075120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Case: TO247-3
Technology: C3M™; SiC
Mounting: THT
Power dissipation: 113.6W
Gate charge: 54nC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 19.7A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Case: TO247-3
Technology: C3M™; SiC
Mounting: THT
Power dissipation: 113.6W
Gate charge: 54nC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 19.7A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 22.64 EUR |
5+ | 15.04 EUR |
6+ | 14.23 EUR |
C3M0075120J |
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Hersteller: Wolfspeed(CREE)
C3M0075120J SMD N channel transistors
C3M0075120J SMD N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 23.05 EUR |
5+ | 16.50 EUR |
C3M0075120K |
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Hersteller: Wolfspeed(CREE)
C3M0075120K THT N channel transistors
C3M0075120K THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 17.32 EUR |
7+ | 10.22 EUR |
C3M0120090D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Case: TO247-3
Technology: C3M™; SiC
Mounting: THT
Power dissipation: 97W
Gate charge: 17.3nC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Case: TO247-3
Technology: C3M™; SiC
Mounting: THT
Power dissipation: 97W
Gate charge: 17.3nC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.29 EUR |
7+ | 10.71 EUR |
30+ | 10.58 EUR |
C3M0120090D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Case: TO247-3
Technology: C3M™; SiC
Mounting: THT
Power dissipation: 97W
Gate charge: 17.3nC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Case: TO247-3
Technology: C3M™; SiC
Mounting: THT
Power dissipation: 97W
Gate charge: 17.3nC
Kind of channel: enhancement
Gate-source voltage: -8...19V
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.29 EUR |
7+ | 10.71 EUR |
30+ | 10.58 EUR |
C3M0120090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.86 EUR |
6+ | 11.93 EUR |
7+ | 11.27 EUR |
50+ | 10.87 EUR |
C3M0120090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.86 EUR |
6+ | 11.93 EUR |
7+ | 11.27 EUR |
50+ | 10.87 EUR |
C3M0120100J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.46 EUR |
7+ | 11.78 EUR |
C3M0120100J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.46 EUR |
7+ | 11.78 EUR |
30+ | 11.31 EUR |
C3M0120100K |
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Hersteller: Wolfspeed(CREE)
C3M0120100K THT N channel transistors
C3M0120100K THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0160120D |
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Hersteller: Wolfspeed(CREE)
C3M0160120D THT N channel transistors
C3M0160120D THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0160120J |
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Hersteller: Wolfspeed(CREE)
C3M0160120J SMD N channel transistors
C3M0160120J SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0280090D |
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Hersteller: Wolfspeed(CREE)
C3M0280090D THT N channel transistors
C3M0280090D THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.21 EUR |
13+ | 5.55 EUR |
14+ | 5.23 EUR |
C3M0280090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.30 EUR |
13+ | 5.52 EUR |
C3M0280090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 20ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.30 EUR |
13+ | 5.52 EUR |
50+ | 5.32 EUR |
C3M0350120D |
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Hersteller: Wolfspeed(CREE)
C3M0350120D THT N channel transistors
C3M0350120D THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C3M0350120J |
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Hersteller: Wolfspeed(CREE)
C3M0350120J SMD N channel transistors
C3M0350120J SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C4D02120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Power dissipation: 60W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Power dissipation: 60W
Manufacturer series: C4D
auf Bestellung 1114 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
250+ | 1.40 EUR |
500+ | 1.37 EUR |
C4D02120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Power dissipation: 60W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 60W; C4D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Power dissipation: 60W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1114 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
250+ | 1.40 EUR |
500+ | 1.37 EUR |
C4D02120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Power dissipation: 52W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Power dissipation: 52W
Manufacturer series: C4D
auf Bestellung 851 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
30+ | 2.46 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
525+ | 1.47 EUR |
C4D02120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Power dissipation: 52W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Power dissipation: 52W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 851 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
30+ | 2.46 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
525+ | 1.47 EUR |
1050+ | 1.43 EUR |
C4D05120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Case: TO220-2
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 81W
Type of diode: Schottky rectifying
Manufacturer series: C4D
Technology: SiC; Z-Rec®
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Case: TO220-2
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 81W
Type of diode: Schottky rectifying
Manufacturer series: C4D
Technology: SiC; Z-Rec®
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
20+ | 3.76 EUR |
21+ | 3.56 EUR |
250+ | 3.52 EUR |
500+ | 3.50 EUR |
C4D05120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Case: TO220-2
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 81W
Type of diode: Schottky rectifying
Manufacturer series: C4D
Technology: SiC; Z-Rec®
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Mounting: THT
Case: TO220-2
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Power dissipation: 81W
Type of diode: Schottky rectifying
Manufacturer series: C4D
Technology: SiC; Z-Rec®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
20+ | 3.76 EUR |
21+ | 3.56 EUR |
250+ | 3.52 EUR |
500+ | 3.50 EUR |
C4D05120E |
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Hersteller: Wolfspeed(CREE)
C4D05120E SMD Schottky diodes
C4D05120E SMD Schottky diodes
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.36 EUR |
19+ | 3.86 EUR |
20+ | 3.65 EUR |
C4D08120A |
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Hersteller: Wolfspeed(CREE)
C4D08120A THT Schottky diodes
C4D08120A THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C4D08120E |
![]() |
Hersteller: Wolfspeed(CREE)
C4D08120E SMD Schottky diodes
C4D08120E SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C4D10120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Power dissipation: 136W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Power dissipation: 136W
Manufacturer series: C4D
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.92 EUR |
10+ | 7.34 EUR |
11+ | 6.94 EUR |
C4D10120A |
![]() |
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Power dissipation: 136W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Power dissipation: 136W
Manufacturer series: C4D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.92 EUR |
10+ | 7.34 EUR |
11+ | 6.94 EUR |
C4D10120D |
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Hersteller: Wolfspeed(CREE)
C4D10120D THT Schottky diodes
C4D10120D THT Schottky diodes
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.95 EUR |
10+ | 7.18 EUR |
11+ | 6.79 EUR |
C4D10120E |
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Hersteller: Wolfspeed(CREE)
C4D10120E SMD Schottky diodes
C4D10120E SMD Schottky diodes
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.34 EUR |
10+ | 7.35 EUR |
75+ | 7.26 EUR |