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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C6D06065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 30W; C6D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.6V Power dissipation: 30W Max. forward impulse current: 42A Manufacturer series: C6D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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C6D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 63A Power dissipation: 40.1W Manufacturer series: C6D |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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| C6D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.6V Power dissipation: 37W Max. forward impulse current: 57A Manufacturer series: C6D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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C6D10065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Power dissipation: 43W Max. forward impulse current: 68A Manufacturer series: C6D |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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CAS120M12BM2 | Wolfspeed(CREE) |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A Mechanical mounting: screw Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor Electrical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor Polarisation: unipolar Operating temperature: -40...125°C Gate-source voltage: -5...20V On-state resistance: 13mΩ Drain current: 138A Pulsed drain current: 480A Power dissipation: 925W Case: 62MM Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| CAS310M17BM3 | Wolfspeed(CREE) |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.7kV; 310A; 62MM; screw; Idm: 620A Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 310A Pulsed drain current: 620A Power dissipation: 1.63kW Case: 62MM Gate-source voltage: -8...19V On-state resistance: 4.29mΩ Topology: MOSFET half-bridge Electrical mounting: screw Mechanical mounting: screw Operating temperature: -40...150°C Semiconductor structure: transistor/transistor Type of semiconductor module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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CSD01060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W Mounting: THT Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Semiconductor structure: single diode Load current: 1A Max. off-state voltage: 0.6kV Power dissipation: 21.4W Case: TO220-2 |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD01060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 21.4W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| WAS300M12BM2 | Wolfspeed(CREE) |
Category: Transistor modules MOSFET Description: Module; 1.2kV; 423A; 1.786kW; SiC Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 423A Power dissipation: 1.786kW Technology: SiC |
auf Bestellung 1381 Stücke: Lieferzeit 14-21 Tag (e) |
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| C6D06065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 30W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 30W
Max. forward impulse current: 42A
Manufacturer series: C6D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 30W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 30W
Max. forward impulse current: 42A
Manufacturer series: C6D
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C6D08065A |
![]() |
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 63A
Power dissipation: 40.1W
Manufacturer series: C6D
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.38 EUR |
| 26+ | 2.76 EUR |
| C6D08065E |
![]() |
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 37W
Max. forward impulse current: 57A
Manufacturer series: C6D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 37W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 37W
Max. forward impulse current: 57A
Manufacturer series: C6D
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C6D10065E |
![]() |
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 43W
Max. forward impulse current: 68A
Manufacturer series: C6D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 43W; C6D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Power dissipation: 43W
Max. forward impulse current: 68A
Manufacturer series: C6D
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.36 EUR |
| CAS120M12BM2 |
![]() |
Hersteller: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 138A; 62MM; screw; Idm: 480A
Mechanical mounting: screw
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Operating temperature: -40...125°C
Gate-source voltage: -5...20V
On-state resistance: 13mΩ
Drain current: 138A
Pulsed drain current: 480A
Power dissipation: 925W
Case: 62MM
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAS310M17BM3 |
![]() |
Hersteller: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.7kV; 310A; 62MM; screw; Idm: 620A
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 310A
Pulsed drain current: 620A
Power dissipation: 1.63kW
Case: 62MM
Gate-source voltage: -8...19V
On-state resistance: 4.29mΩ
Topology: MOSFET half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Operating temperature: -40...150°C
Semiconductor structure: transistor/transistor
Type of semiconductor module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.7kV; 310A; 62MM; screw; Idm: 620A
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 310A
Pulsed drain current: 620A
Power dissipation: 1.63kW
Case: 62MM
Gate-source voltage: -8...19V
On-state resistance: 4.29mΩ
Topology: MOSFET half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Operating temperature: -40...150°C
Semiconductor structure: transistor/transistor
Type of semiconductor module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CSD01060A |
![]() |
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Load current: 1A
Max. off-state voltage: 0.6kV
Power dissipation: 21.4W
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 1A; TO220-2; 21.4W
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Load current: 1A
Max. off-state voltage: 0.6kV
Power dissipation: 21.4W
Case: TO220-2
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 48+ | 1.5 EUR |
| 56+ | 1.29 EUR |
| 61+ | 1.17 EUR |
| CSD01060E |
![]() |
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 21.4W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 1A; 21.4W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 21.4W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WAS300M12BM2 |
Hersteller: Wolfspeed(CREE)
Category: Transistor modules MOSFET
Description: Module; 1.2kV; 423A; 1.786kW; SiC
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 423A
Power dissipation: 1.786kW
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; 1.2kV; 423A; 1.786kW; SiC
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 423A
Power dissipation: 1.786kW
Technology: SiC
auf Bestellung 1381 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 720.51 EUR |
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