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C3D10065E C3D10065E Wolfspeed(CREE) C3D10065E-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 150W
Semiconductor structure: single diode
Case: TO252-2
Manufacturer series: C3D
Produkt ist nicht verfügbar
C3D10065E C3D10065E Wolfspeed(CREE) C3D10065E-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 150W
Semiconductor structure: single diode
Case: TO252-2
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3D10065I C3D10065I Wolfspeed(CREE) C3D10065I-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 60W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.25 EUR
Mindestbestellmenge: 17
C3D10065I C3D10065I Wolfspeed(CREE) C3D10065I-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 60W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.25 EUR
Mindestbestellmenge: 17
C3D12065A C3D12065A Wolfspeed(CREE) C3D12065A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Semiconductor structure: single diode
Max. off-state voltage: 650V
Load current: 12A
Case: TO220-2
Mounting: THT
Manufacturer series: C3D
Power dissipation: 62W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Produkt ist nicht verfügbar
C3D12065A C3D12065A Wolfspeed(CREE) C3D12065A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Semiconductor structure: single diode
Max. off-state voltage: 650V
Load current: 12A
Case: TO220-2
Mounting: THT
Manufacturer series: C3D
Power dissipation: 62W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3D16060D C3D16060D Wolfspeed(CREE) C3D16060D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.48 EUR
11+ 6.61 EUR
14+ 5.13 EUR
Mindestbestellmenge: 10
C3D16060D C3D16060D Wolfspeed(CREE) C3D16060D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.48 EUR
11+ 6.61 EUR
14+ 5.13 EUR
Mindestbestellmenge: 10
C3D16065D C3D16065D Wolfspeed(CREE) C3D16065D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
C3D16065D C3D16065D Wolfspeed(CREE) C3D16065D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Anzahl je Verpackung: 600 Stücke
Produkt ist nicht verfügbar
C3D16065D1 C3D16065D1 Wolfspeed(CREE) c3d16065d1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
C3D16065D1 C3D16065D1 Wolfspeed(CREE) c3d16065d1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3D20060D C3D20060D Wolfspeed(CREE) C3D20060D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.02 EUR
5+ 14.6 EUR
6+ 13.81 EUR
Mindestbestellmenge: 4
C3D20060D C3D20060D Wolfspeed(CREE) C3D20060D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
4+20.02 EUR
5+ 14.6 EUR
6+ 13.81 EUR
Mindestbestellmenge: 4
C3D20065D C3D20065D Wolfspeed(CREE) C3D20065D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.22 EUR
11+ 6.78 EUR
12+ 6.41 EUR
Mindestbestellmenge: 8
C3D20065D C3D20065D Wolfspeed(CREE) C3D20065D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.22 EUR
11+ 6.78 EUR
12+ 6.41 EUR
Mindestbestellmenge: 8
C3D25170H C3D25170H Wolfspeed(CREE) C3D25170H-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; 377W; TO247-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Power dissipation: 377W
Semiconductor structure: single diode
Case: TO247-2
Manufacturer series: C3D
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.84 EUR
C3D30065D Wolfspeed(CREE) c3d30065d.pdf C3D30065D THT Schottky diodes
Produkt ist nicht verfügbar
C3M0015065K Wolfspeed(CREE) C3M0015065K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0015065K Wolfspeed(CREE) C3M0015065K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0016120K Wolfspeed(CREE) c3m0016120k.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0016120K Wolfspeed(CREE) c3m0016120k.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0030090K C3M0030090K Wolfspeed(CREE) C3M0030090K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 62ns
Produkt ist nicht verfügbar
C3M0030090K C3M0030090K Wolfspeed(CREE) C3M0030090K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0060065D Wolfspeed(CREE) C3M0060065D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
C3M0060065D Wolfspeed(CREE) C3M0060065D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0060065J Wolfspeed(CREE) C3M0060065J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0060065J Wolfspeed(CREE) C3M0060065J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0060065K Wolfspeed(CREE) C3M0060065K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0060065K Wolfspeed(CREE) C3M0060065K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0065090D C3M0065090D Wolfspeed(CREE) C3M0065090D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: TO247-3
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.25 EUR
30+ 18.55 EUR
Mindestbestellmenge: 4
C3M0065090D C3M0065090D Wolfspeed(CREE) C3M0065090D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
4+19.25 EUR
30+ 18.55 EUR
Mindestbestellmenge: 4
C3M0065090J C3M0065090J Wolfspeed(CREE) C3M0065090J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: D2PAK-7
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.15 EUR
5+ 17.16 EUR
Mindestbestellmenge: 4
C3M0065090J C3M0065090J Wolfspeed(CREE) C3M0065090J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: D2PAK-7
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.15 EUR
5+ 17.16 EUR
Mindestbestellmenge: 4
C3M0065090J-TR C3M0065090J-TR Wolfspeed(CREE) C3M0065090J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: D2PAK-7
Produkt ist nicht verfügbar
C3M0065090J-TR C3M0065090J-TR Wolfspeed(CREE) C3M0065090J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: D2PAK-7
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
C3M0065100J C3M0065100J Wolfspeed(CREE) c3m0065100j.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
Produkt ist nicht verfügbar
C3M0065100J C3M0065100J Wolfspeed(CREE) c3m0065100j.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0065100K C3M0065100K Wolfspeed(CREE) C3M0065100K-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-4
Produkt ist nicht verfügbar
C3M0065100K C3M0065100K Wolfspeed(CREE) C3M0065100K-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0075120D C3M0075120D Wolfspeed(CREE) c3m0075120d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
4+23.71 EUR
5+ 15.09 EUR
Mindestbestellmenge: 4
C3M0075120D C3M0075120D Wolfspeed(CREE) c3m0075120d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
4+23.71 EUR
5+ 15.09 EUR
Mindestbestellmenge: 4
C3M0075120J C3M0075120J Wolfspeed(CREE) C3M0075120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
C3M0075120J C3M0075120J Wolfspeed(CREE) C3M0075120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0075120K C3M0075120K Wolfspeed(CREE) C3M0075120K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
C3M0075120K C3M0075120K Wolfspeed(CREE) C3M0075120K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0120090D C3M0120090D Wolfspeed(CREE) C3M0120090D-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 23A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 17.3nC
Kind of channel: enhanced
Reverse recovery time: 24ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.76 EUR
7+ 10.27 EUR
8+ 9.7 EUR
Mindestbestellmenge: 6
C3M0120090D C3M0120090D Wolfspeed(CREE) C3M0120090D-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 23A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 17.3nC
Kind of channel: enhanced
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.76 EUR
7+ 10.27 EUR
8+ 9.7 EUR
Mindestbestellmenge: 6
C3M0120090J C3M0120090J Wolfspeed(CREE) C3M0120090J-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 24ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.24 EUR
7+ 11.2 EUR
Mindestbestellmenge: 5
C3M0120090J C3M0120090J Wolfspeed(CREE) C3M0120090J-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.24 EUR
7+ 11.2 EUR
Mindestbestellmenge: 5
C3M0120100J C3M0120100J Wolfspeed(CREE) C3M0120100J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.59 EUR
6+ 12.37 EUR
7+ 11.7 EUR
Mindestbestellmenge: 5
C3M0120100J C3M0120100J Wolfspeed(CREE) C3M0120100J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.59 EUR
6+ 12.37 EUR
7+ 11.7 EUR
Mindestbestellmenge: 5
C3M0120100K C3M0120100K Wolfspeed(CREE) C3M0120100K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13.5A
Power dissipation: 83W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Produkt ist nicht verfügbar
C3M0120100K C3M0120100K Wolfspeed(CREE) C3M0120100K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13.5A
Power dissipation: 83W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0160120D Wolfspeed(CREE) C3M0160120D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
C3M0160120D Wolfspeed(CREE) C3M0160120D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0160120J Wolfspeed(CREE) C3M0160120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0160120J Wolfspeed(CREE) C3M0160120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0280090D C3M0280090D Wolfspeed(CREE) C3M0280090D-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 7.5A; 54W; TO247-3; 20ns
Case: TO247-3
Mounting: THT
Reverse recovery time: 20ns
Drain-source voltage: 900V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 9.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.64 EUR
13+ 5.52 EUR
14+ 5.22 EUR
30+ 5.02 EUR
Mindestbestellmenge: 11
C3M0280090D C3M0280090D Wolfspeed(CREE) C3M0280090D-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 7.5A; 54W; TO247-3; 20ns
Case: TO247-3
Mounting: THT
Reverse recovery time: 20ns
Drain-source voltage: 900V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 9.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.64 EUR
13+ 5.52 EUR
14+ 5.22 EUR
30+ 5.02 EUR
Mindestbestellmenge: 11
C3D10065E C3D10065E-DTE.PDF
C3D10065E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 150W
Semiconductor structure: single diode
Case: TO252-2
Manufacturer series: C3D
Produkt ist nicht verfügbar
C3D10065E C3D10065E-DTE.PDF
C3D10065E
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 150W
Semiconductor structure: single diode
Case: TO252-2
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3D10065I C3D10065I-DTE.PDF
C3D10065I
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 60W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
17+4.25 EUR
Mindestbestellmenge: 17
C3D10065I C3D10065I-DTE.PDF
C3D10065I
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 60W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.25 EUR
Mindestbestellmenge: 17
C3D12065A C3D12065A.pdf
C3D12065A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Semiconductor structure: single diode
Max. off-state voltage: 650V
Load current: 12A
Case: TO220-2
Mounting: THT
Manufacturer series: C3D
Power dissipation: 62W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Produkt ist nicht verfügbar
C3D12065A C3D12065A.pdf
C3D12065A
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Semiconductor structure: single diode
Max. off-state voltage: 650V
Load current: 12A
Case: TO220-2
Mounting: THT
Manufacturer series: C3D
Power dissipation: 62W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3D16060D C3D16060D-DTE.PDF
C3D16060D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.48 EUR
11+ 6.61 EUR
14+ 5.13 EUR
Mindestbestellmenge: 10
C3D16060D C3D16060D-DTE.PDF
C3D16060D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.48 EUR
11+ 6.61 EUR
14+ 5.13 EUR
Mindestbestellmenge: 10
C3D16065D C3D16065D-DTE.PDF
C3D16065D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
C3D16065D C3D16065D-DTE.PDF
C3D16065D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Anzahl je Verpackung: 600 Stücke
Produkt ist nicht verfügbar
C3D16065D1 c3d16065d1.pdf
C3D16065D1
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
C3D16065D1 c3d16065d1.pdf
C3D16065D1
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3D20060D C3D20060D-DTE.PDF
C3D20060D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+20.02 EUR
5+ 14.6 EUR
6+ 13.81 EUR
Mindestbestellmenge: 4
C3D20060D C3D20060D-DTE.PDF
C3D20060D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+20.02 EUR
5+ 14.6 EUR
6+ 13.81 EUR
Mindestbestellmenge: 4
C3D20065D C3D20065D-DTE.PDF
C3D20065D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+9.22 EUR
11+ 6.78 EUR
12+ 6.41 EUR
Mindestbestellmenge: 8
C3D20065D C3D20065D-DTE.PDF
C3D20065D
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.22 EUR
11+ 6.78 EUR
12+ 6.41 EUR
Mindestbestellmenge: 8
C3D25170H C3D25170H-DTE.PDF
C3D25170H
Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; 377W; TO247-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Power dissipation: 377W
Semiconductor structure: single diode
Case: TO247-2
Manufacturer series: C3D
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.84 EUR
C3D30065D c3d30065d.pdf
Hersteller: Wolfspeed(CREE)
C3D30065D THT Schottky diodes
Produkt ist nicht verfügbar
C3M0015065K C3M0015065K.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0015065K C3M0015065K.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0016120K c3m0016120k.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0016120K c3m0016120k.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0030090K C3M0030090K.pdf
C3M0030090K
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 62ns
Produkt ist nicht verfügbar
C3M0030090K C3M0030090K.pdf
C3M0030090K
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 149W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0060065D C3M0060065D.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
C3M0060065D C3M0060065D.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0060065J C3M0060065J.pdf
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0060065J C3M0060065J.pdf
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0060065K C3M0060065K.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0060065K C3M0060065K.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0065090D C3M0065090D.pdf
C3M0065090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: TO247-3
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+19.25 EUR
30+ 18.55 EUR
Mindestbestellmenge: 4
C3M0065090D C3M0065090D.pdf
C3M0065090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Mounting: THT
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+19.25 EUR
30+ 18.55 EUR
Mindestbestellmenge: 4
C3M0065090J C3M0065090J.pdf
C3M0065090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: D2PAK-7
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+18.15 EUR
5+ 17.16 EUR
Mindestbestellmenge: 4
C3M0065090J C3M0065090J.pdf
C3M0065090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: D2PAK-7
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+18.15 EUR
5+ 17.16 EUR
Mindestbestellmenge: 4
C3M0065090J-TR C3M0065090J.pdf
C3M0065090J-TR
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: D2PAK-7
Produkt ist nicht verfügbar
C3M0065090J-TR C3M0065090J.pdf
C3M0065090J-TR
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: D2PAK-7
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
C3M0065100J c3m0065100j.pdf
C3M0065100J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
Produkt ist nicht verfügbar
C3M0065100J c3m0065100j.pdf
C3M0065100J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0065100K C3M0065100K-DTE.pdf
C3M0065100K
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-4
Produkt ist nicht verfügbar
C3M0065100K C3M0065100K-DTE.pdf
C3M0065100K
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0075120D c3m0075120d.pdf
C3M0075120D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+23.71 EUR
5+ 15.09 EUR
Mindestbestellmenge: 4
C3M0075120D c3m0075120d.pdf
C3M0075120D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+23.71 EUR
5+ 15.09 EUR
Mindestbestellmenge: 4
C3M0075120J C3M0075120J.pdf
C3M0075120J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
C3M0075120J C3M0075120J.pdf
C3M0075120J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0075120K C3M0075120K.pdf
C3M0075120K
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
C3M0075120K C3M0075120K.pdf
C3M0075120K
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0120090D C3M0120090D-DTE.pdf
C3M0120090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 23A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 17.3nC
Kind of channel: enhanced
Reverse recovery time: 24ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+13.76 EUR
7+ 10.27 EUR
8+ 9.7 EUR
Mindestbestellmenge: 6
C3M0120090D C3M0120090D-DTE.pdf
C3M0120090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 23A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 17.3nC
Kind of channel: enhanced
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+13.76 EUR
7+ 10.27 EUR
8+ 9.7 EUR
Mindestbestellmenge: 6
C3M0120090J C3M0120090J-DTE.pdf
C3M0120090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 24ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+16.24 EUR
7+ 11.2 EUR
Mindestbestellmenge: 5
C3M0120090J C3M0120090J-DTE.pdf
C3M0120090J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 17.3nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+16.24 EUR
7+ 11.2 EUR
Mindestbestellmenge: 5
C3M0120100J C3M0120100J.pdf
C3M0120100J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+15.59 EUR
6+ 12.37 EUR
7+ 11.7 EUR
Mindestbestellmenge: 5
C3M0120100J C3M0120100J.pdf
C3M0120100J
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.59 EUR
6+ 12.37 EUR
7+ 11.7 EUR
Mindestbestellmenge: 5
C3M0120100K C3M0120100K.pdf
C3M0120100K
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13.5A
Power dissipation: 83W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Produkt ist nicht verfügbar
C3M0120100K C3M0120100K.pdf
C3M0120100K
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13.5A
Power dissipation: 83W
Case: TO247-4
Gate-source voltage: -4...15V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0160120D C3M0160120D.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
C3M0160120D C3M0160120D.pdf
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0160120J C3M0160120J.pdf
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
C3M0160120J C3M0160120J.pdf
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
C3M0280090D C3M0280090D-DTE.pdf
C3M0280090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 7.5A; 54W; TO247-3; 20ns
Case: TO247-3
Mounting: THT
Reverse recovery time: 20ns
Drain-source voltage: 900V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 9.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.64 EUR
13+ 5.52 EUR
14+ 5.22 EUR
30+ 5.02 EUR
Mindestbestellmenge: 11
C3M0280090D C3M0280090D-DTE.pdf
C3M0280090D
Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 7.5A; 54W; TO247-3; 20ns
Case: TO247-3
Mounting: THT
Reverse recovery time: 20ns
Drain-source voltage: 900V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 9.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.64 EUR
13+ 5.52 EUR
14+ 5.22 EUR
30+ 5.02 EUR
Mindestbestellmenge: 11
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