Produkte > WOLFSPEED(CREE) > Alle Produkte des Herstellers WOLFSPEED(CREE) (80) > Seite 1 nach 2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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C2M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns Technology: SiC; Z-FET™ Mounting: THT Case: TO247-3 Power dissipation: 330W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...25V On-state resistance: 40mΩ Reverse recovery time: 54ns Gate charge: 115nC Polarisation: unipolar Drain current: 60A |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C2M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3 Technology: SiC; Z-FET™ Mounting: THT Case: TO247-3 Power dissipation: 125W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...25V On-state resistance: 196mΩ Reverse recovery time: 23ns Gate charge: 34nC Polarisation: unipolar Drain current: 17.7A |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D02060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 39.5W Manufacturer series: C3D |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| C3D02060E-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 17W Manufacturer series: C3D Max. forward impulse current: 15A Max. forward voltage: 1.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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C3D02060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 10.8W Manufacturer series: C3D |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D02065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 39.5W Manufacturer series: C3D Max. forward voltage: 1.8V |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D03060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 53W Manufacturer series: C3D |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D03060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 12.5W Manufacturer series: C3D |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D04060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 75W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D04060E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D Mounting: SMD Manufacturer series: C3D Power dissipation: 75W Technology: SiC; Z-Rec® Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO252-2 Type of diode: Schottky rectifying |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D04060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.7V Power dissipation: 13.1W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D04065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 52W Manufacturer series: C3D Max. forward voltage: 1.8V |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D04065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D06060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 79W Manufacturer series: C3D |
auf Bestellung 2209 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D06060F | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Power dissipation: 17W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| C3D06060G-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 2V Power dissipation: 39W Max. forward impulse current: 49A Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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C3D06065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 100W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D06065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Power dissipation: 100W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D08060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 110W Manufacturer series: C3D |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D08060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Power dissipation: 107W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D08065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 107W Manufacturer series: C3D |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D08065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 120W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D10060A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D Max. off-state voltage: 0.6kV Load current: 10A Case: TO220-2 Mounting: THT Manufacturer series: C3D Power dissipation: 136W Technology: SiC; Z-Rec® Semiconductor structure: single diode Type of diode: Schottky rectifying |
auf Bestellung 147 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D10060G | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO263-2 Power dissipation: 136W Manufacturer series: C3D |
auf Bestellung 406 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| C3D10060G-TR | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D Type of diode: Schottky rectifying Case: TO263-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 71A Power dissipation: 54W Manufacturer series: C3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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C3D10065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136.5W Manufacturer series: C3D |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D10065E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D Technology: SiC; Z-Rec® Semiconductor structure: single diode Mounting: SMD Case: TO252-2 Load current: 10A Power dissipation: 150W Max. off-state voltage: 650V Manufacturer series: C3D Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D10065I | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C3D Max. forward voltage: 1.8V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D12065A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 62W Manufacturer series: C3D Max. forward voltage: 1.8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D16060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 100W Manufacturer series: C3D |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D16065D1 | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO247-3 Power dissipation: 75W Manufacturer series: C3D Max. forward voltage: 1.8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3D20060D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 250W Manufacturer series: C3D |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3D20065D | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Power dissipation: 250W Manufacturer series: C3D |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| C3M0015065D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 416W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| C3M0015065K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 96A Pulsed drain current: 418A Power dissipation: 416W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 20mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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C3M0021120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W Technology: C3M™; SiC Mounting: THT Case: TO247-4 Power dissipation: 469W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 38mΩ Reverse recovery time: 34ns Pulsed drain current: 200A Gate charge: 162nC Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 74A |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| C3M0032120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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C3M0040120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 48A Pulsed drain current: 223A Power dissipation: 326W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 68mΩ Mounting: THT Gate charge: 101nC Kind of channel: enhancement Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
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C3M0040120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W Technology: C3M™; SiC Mounting: THT Case: TO247-4 Power dissipation: 326W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 68mΩ Reverse recovery time: 30ns Pulsed drain current: 223A Gate charge: 99nC Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 48A |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| C3M0060065D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: THT Gate charge: 46nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| C3M0060065J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 46nC On-state resistance: 80mΩ Drain current: 26A Pulsed drain current: 99A Drain-source voltage: 650V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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C3M0065090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 125W Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 78mΩ Reverse recovery time: 30ns Gate charge: 30.4nC Polarisation: unipolar Drain current: 36A |
auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3M0065090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 35A Power dissipation: 113W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 78mΩ Mounting: SMD Gate charge: 30.4nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 16ns |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3M0065090J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 35A Power dissipation: 113W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 78mΩ Mounting: SMD Gate charge: 30.4nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 16ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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C3M0065100J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 113.5W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 9nC Reverse recovery time: 14ns On-state resistance: 65mΩ Drain current: 35A Drain-source voltage: 1kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3M0075120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 113.6W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 0.105Ω Pulsed drain current: 80A Gate charge: 54nC Polarisation: unipolar Drain current: 19.7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3M0075120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Case: D2PAK-7 Power dissipation: 113.6W Gate charge: 14nC Polarisation: unipolar Technology: C3M™; SiC Features of semiconductor devices: Kelvin terminal Drain current: 30A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 75mΩ Reverse recovery time: 18ns Mounting: SMD |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3M0075120K | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4 Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 113.6W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 75mΩ Mounting: THT Gate charge: 14nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 18ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3M0120090D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 97W Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 0.12Ω Reverse recovery time: 24ns Gate charge: 17.3nC Polarisation: unipolar Drain current: 23A |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C3M0120090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 83W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 17.3nC Reverse recovery time: 24ns On-state resistance: 0.12Ω Drain current: 22A Drain-source voltage: 900V Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C3M0160120D | Wolfspeed(CREE) |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Technology: C3M™; SiC Mounting: THT Case: TO247-3 Power dissipation: 97W Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -8...19V On-state resistance: 256mΩ Pulsed drain current: 34A Gate charge: 38nC Polarisation: unipolar Drain current: 12A |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| C3M0160120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 90W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 24nC On-state resistance: 256mΩ Drain current: 12A Pulsed drain current: 34A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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C3M0280090J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 50W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Reverse recovery time: 20ns |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| C3M0350120J | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W Case: D2PAK-7 Technology: C3M™; SiC Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate-source voltage: -8...19V Gate charge: 13nC On-state resistance: 525mΩ Drain current: 5A Pulsed drain current: 20A Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| C3M0350120J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate charge: 13nC Drain current: 7.2A Drain-source voltage: 1.2kV Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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C4D02120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 52W Manufacturer series: C4D |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C4D05120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 81W Manufacturer series: C4D |
auf Bestellung 723 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D05120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 97W Manufacturer series: C4D |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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C4D08120E | Wolfspeed(CREE) |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 3V Power dissipation: 137W Manufacturer series: C4D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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C4D10120A | Wolfspeed(CREE) |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136W Manufacturer series: C4D |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| C2M0040120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 330W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Reverse recovery time: 54ns
Gate charge: 115nC
Polarisation: unipolar
Drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 330W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 40mΩ
Reverse recovery time: 54ns
Gate charge: 115nC
Polarisation: unipolar
Drain current: 60A
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| C2M0160120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 196mΩ
Reverse recovery time: 23ns
Gate charge: 34nC
Polarisation: unipolar
Drain current: 17.7A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
Technology: SiC; Z-FET™
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
On-state resistance: 196mΩ
Reverse recovery time: 23ns
Gate charge: 34nC
Polarisation: unipolar
Drain current: 17.7A
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D02060E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D02060E-TR |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 17W
Manufacturer series: C3D
Max. forward impulse current: 15A
Max. forward voltage: 1.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 2A; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 17W
Manufacturer series: C3D
Max. forward impulse current: 15A
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| C3D02060F |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 2A; TO220FP-2; 10.8W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 10.8W
Manufacturer series: C3D
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D02065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 2A; 39.5W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 39.5W
Manufacturer series: C3D
Max. forward voltage: 1.8V
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D03060E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 53W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 3A; 53W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 53W
Manufacturer series: C3D
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D03060F |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 12.5W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220FP-2; 12.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 12.5W
Manufacturer series: C3D
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D04060A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220-2; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 75W
Manufacturer series: C3D
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| C3D04060E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Mounting: SMD
Manufacturer series: C3D
Power dissipation: 75W
Technology: SiC; Z-Rec®
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 600V; 4A; 75W; C3D
Mounting: SMD
Manufacturer series: C3D
Power dissipation: 75W
Technology: SiC; Z-Rec®
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Type of diode: Schottky rectifying
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D04060F |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Power dissipation: 13.1W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; TO220FP-2; 13.1W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Power dissipation: 13.1W
Manufacturer series: C3D
Produkt ist nicht verfügbar
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| C3D04065A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 52W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.8V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 52W
Manufacturer series: C3D
Max. forward voltage: 1.8V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D04065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D06060A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220-2; 79W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 79W
Manufacturer series: C3D
auf Bestellung 2209 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D06060F |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 17W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220FP-2; 17W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Power dissipation: 17W
Manufacturer series: C3D
Produkt ist nicht verfügbar
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| C3D06060G-TR |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2V
Power dissipation: 39W
Max. forward impulse current: 49A
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 6A; 39W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2V
Power dissipation: 39W
Max. forward impulse current: 49A
Manufacturer series: C3D
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| C3D06065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 100W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 100W
Manufacturer series: C3D
Produkt ist nicht verfügbar
Im Einkaufswagen
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| C3D06065I |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Power dissipation: 100W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Power dissipation: 100W
Manufacturer series: C3D
Produkt ist nicht verfügbar
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| C3D08060A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 110W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220-2; 110W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 110W
Manufacturer series: C3D
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D08060G |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 107W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 8A; 107W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Power dissipation: 107W
Manufacturer series: C3D
Produkt ist nicht verfügbar
Im Einkaufswagen
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| C3D08065A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 107W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 107W
Manufacturer series: C3D
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D08065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; 120W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 120W
Manufacturer series: C3D
Produkt ist nicht verfügbar
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| C3D10060A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Max. off-state voltage: 0.6kV
Load current: 10A
Case: TO220-2
Mounting: THT
Manufacturer series: C3D
Power dissipation: 136W
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220-2; 136W; C3D
Max. off-state voltage: 0.6kV
Load current: 10A
Case: TO220-2
Mounting: THT
Manufacturer series: C3D
Power dissipation: 136W
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Type of diode: Schottky rectifying
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D10060G |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 136W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263-2
Power dissipation: 136W
Manufacturer series: C3D
auf Bestellung 406 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D10060G-TR |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 71A
Power dissipation: 54W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 600V; 10A; 54W; C3D
Type of diode: Schottky rectifying
Case: TO263-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 71A
Power dissipation: 54W
Manufacturer series: C3D
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| C3D10065A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 136.5W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D10065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO252-2
Load current: 10A
Power dissipation: 150W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; 150W; C3D
Technology: SiC; Z-Rec®
Semiconductor structure: single diode
Mounting: SMD
Case: TO252-2
Load current: 10A
Power dissipation: 150W
Max. off-state voltage: 650V
Manufacturer series: C3D
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
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| C3D10065I |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; 60W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
Max. forward voltage: 1.8V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D12065A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 62W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; 62W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 62W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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| C3D16060D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 100W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; TO247-3; 100W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 100W
Manufacturer series: C3D
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D16065D1 |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO247-3
Power dissipation: 75W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 75W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO247-3
Power dissipation: 75W
Manufacturer series: C3D
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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| C3D20060D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| C3D20065D |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 250W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Power dissipation: 250W
Manufacturer series: C3D
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0015065D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 416W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 120A; 416W; TO247-3
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 416W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| C3M0015065K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| C3M0021120K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 469W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Reverse recovery time: 34ns
Pulsed drain current: 200A
Gate charge: 162nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 74A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 200A; 469W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 469W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 38mΩ
Reverse recovery time: 34ns
Pulsed drain current: 200A
Gate charge: 162nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 74A
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0032120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| C3M0040120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 48A
Pulsed drain current: 223A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 101nC
Kind of channel: enhancement
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| C3M0040120K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 326W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Reverse recovery time: 30ns
Pulsed drain current: 223A
Gate charge: 99nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 223A; 326W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-4
Power dissipation: 326W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 68mΩ
Reverse recovery time: 30ns
Pulsed drain current: 223A
Gate charge: 99nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 48A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0060065D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0060065J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Drain-source voltage: 650V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 46nC
On-state resistance: 80mΩ
Drain current: 26A
Pulsed drain current: 99A
Drain-source voltage: 650V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0065090D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Reverse recovery time: 30ns
Gate charge: 30.4nC
Polarisation: unipolar
Drain current: 36A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Reverse recovery time: 30ns
Gate charge: 30.4nC
Polarisation: unipolar
Drain current: 36A
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0065090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0065090J-TR |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 35A
Power dissipation: 113W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 30.4nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 16ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
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| C3M0065100J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.5W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9nC
Reverse recovery time: 14ns
On-state resistance: 65mΩ
Drain current: 35A
Drain-source voltage: 1kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 113.5W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 9nC
Reverse recovery time: 14ns
On-state resistance: 65mΩ
Drain current: 35A
Drain-source voltage: 1kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0075120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 113.6W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Pulsed drain current: 80A
Gate charge: 54nC
Polarisation: unipolar
Drain current: 19.7A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 113.6W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Pulsed drain current: 80A
Gate charge: 54nC
Polarisation: unipolar
Drain current: 19.7A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0075120J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Power dissipation: 113.6W
Gate charge: 14nC
Polarisation: unipolar
Technology: C3M™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Reverse recovery time: 18ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Case: D2PAK-7
Power dissipation: 113.6W
Gate charge: 14nC
Polarisation: unipolar
Technology: C3M™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Reverse recovery time: 18ns
Mounting: SMD
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0075120K |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0120090D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Reverse recovery time: 24ns
Gate charge: 17.3nC
Polarisation: unipolar
Drain current: 23A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Reverse recovery time: 24ns
Gate charge: 17.3nC
Polarisation: unipolar
Drain current: 23A
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0120090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 17.3nC
Reverse recovery time: 24ns
On-state resistance: 0.12Ω
Drain current: 22A
Drain-source voltage: 900V
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0160120D |
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Hersteller: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Pulsed drain current: 34A
Gate charge: 38nC
Polarisation: unipolar
Drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Technology: C3M™; SiC
Mounting: THT
Case: TO247-3
Power dissipation: 97W
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Pulsed drain current: 34A
Gate charge: 38nC
Polarisation: unipolar
Drain current: 12A
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0160120J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 90W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 24nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 90W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 24nC
On-state resistance: 256mΩ
Drain current: 12A
Pulsed drain current: 34A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0280090J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 11A; 50W; D2PAK-7; 20ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 50W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 20ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0350120J |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 13nC
On-state resistance: 525mΩ
Drain current: 5A
Pulsed drain current: 20A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W
Case: D2PAK-7
Technology: C3M™; SiC
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate-source voltage: -8...19V
Gate charge: 13nC
On-state resistance: 525mΩ
Drain current: 5A
Pulsed drain current: 20A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0350120J-TR |
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Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| C4D02120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; 52W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 52W
Manufacturer series: C4D
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| C4D05120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 81W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 81W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 81W
Manufacturer series: C4D
auf Bestellung 723 Stücke:
Lieferzeit 14-21 Tag (e)
| C4D05120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 97W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; 97W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 97W
Manufacturer series: C4D
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
| C4D08120E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 3V
Power dissipation: 137W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; 137W; C4D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 3V
Power dissipation: 137W
Manufacturer series: C4D
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C4D10120A |
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Hersteller: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 136W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136W
Manufacturer series: C4D
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)

















