Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (3950) > Seite 17 nach 66
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DBL207 | Yangjie Technology | Description: DBL 1000V 2.0A Diodes Bridge R |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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DBL207S | Yangjie Technology | Description: DBLS 1000V 2.0A Diodes Bridge |
auf Bestellung 150000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA123YCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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DDTC113ZCA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: NPN Case: SOT23 Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.5A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| DDTC113ZCA | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.5A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC113ZCA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: NPN Case: SOT23 Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.5A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Anzahl je Verpackung: 25 Stücke |
auf Bestellung 1600 Stücke: Lieferzeit 7-14 Tag (e) |
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DF25NA100 | Yangjie Technology |
Description: TSB-5 1000V 25.0A Diodes BridgPackaging: Bulk Part Status: Active |
auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
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DF25NA100 | YANGJIE TECHNOLOGY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT Leads: flat pin Version: flat Type of bridge rectifier: three-phase Electrical mounting: THT Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.4kA Max. off-state voltage: 1kV Case: TSB-5 |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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DF25NA100 | YANGJIE TECHNOLOGY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT Leads: flat pin Version: flat Type of bridge rectifier: three-phase Electrical mounting: THT Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.4kA Max. off-state voltage: 1kV Case: TSB-5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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DF25NA160 | Yangjie Technology |
Description: TSB-5 1600V 25.0A Diodes BridgPackaging: Bulk Part Status: Active |
auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
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DF25NA80 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers TSB-5 Packaging: Bulk Package / Case: 5-SIP, TSB-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TSB-5 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF35NA100 | YANGJIE TECHNOLOGY | DF35NA100-YAN Three phase diode bridge rectifiers |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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DF35NA80 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers TSB-5 Packaging: Bulk Package / Case: 5-SIP, TSB-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TSB-5 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
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DGW15N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A Supplier Device Package: TO-247 IGBT Type: Trench Td (on/off) @ 25°C: 45ns/128ns Switching Energy: 1.5mJ (on), 900µJ (off) Test Condition: 600V, 15A, 33Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 200 W |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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DGW25N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A Supplier Device Package: TO-247 IGBT Type: Trench Td (on/off) @ 25°C: 158ns/331ns Switching Energy: 1.8m (on), 1.4mJ (off) Test Condition: 600V, 25A, 18Ohm, 15V Gate Charge: 200 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 326 W |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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DGW30N65BTH | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 37ns/113ns Switching Energy: 870µJ (on), 260µJ (off) Test Condition: 300V, 30A, 33Ohm, 15V Gate Charge: 150 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 187 W |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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DGW40N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 45ns/180ns Switching Energy: 3.8mJ (on), 1.7mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 428 W |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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DGW50N65CTL1 | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A Supplier Device Package: TO-247AB Td (on/off) @ 25°C: 55ns/319ns Switching Energy: 1.27mJ (on), 650µJ (off) Test Condition: 300V, 50A, 10Ohm, 15V Gate Charge: 450 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 326 W |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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DGW75N65CTL1 | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Supplier Device Package: TO-247AB Td (on/off) @ 25°C: 75ns/468ns Switching Energy: 2.5mJ (on), 1.3mJ (off) Test Condition: 300V, 75A, 10Ohm, 15V Gate Charge: 580 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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DS521-30L2 | Yangjie Technology |
Description: Diodes - Rectifiers - Single DFN Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: DFN1006-2L Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V |
auf Bestellung 1000000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA113ZCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA113ZCA | Yangjie Technology | Description: SOT-23 PNP 0.2W -0.1A Transisto |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA113ZCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Anzahl je Verpackung: 25 Stücke |
auf Bestellung 700 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA113ZE | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA113ZUA | Yangjie Technology | Description: SOT-323 PNP 0.2W -0.1A Transist |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA113ZUA | YANGJIE TECHNOLOGY | DTA113ZUA-YAN PNP SMD transistors |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA114ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA114ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 3700 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Anzahl je Verpackung: 25 Stücke |
auf Bestellung 3700 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA114EUA | Yangjie Technology |
Description: SOT-323 PNP 0.2W -0.1A Transist Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA114EUA | YANGJIE TECHNOLOGY | DTA114EUA-YAN PNP SMD transistors |
auf Bestellung 1825 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA114YCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Anzahl je Verpackung: 25 Stücke |
auf Bestellung 2700 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA123ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Anzahl je Verpackung: 25 Stücke |
auf Bestellung 2375 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA123JCA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123JE | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123JUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA124ECA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA124EUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Power dissipation: 0.2W Frequency: 250MHz |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA124EUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA124EUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Power dissipation: 0.2W Frequency: 250MHz Anzahl je Verpackung: 25 Stücke |
auf Bestellung 2375 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA143ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA143ECA | YANGJIE TECHNOLOGY | DTA143ECA-YAN PNP SMD transistors |
auf Bestellung 4850 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA143EE | Yangjie Technology |
Description: SOT-523 PNP 0.15W -0.1A Transis Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA143EUA | Yangjie Technology |
Description: SOT-323 PNP 0.2W -0.1A Transist Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA143EUA | YANGJIE TECHNOLOGY | DTA143EUA-YAN PNP SMD transistors |
auf Bestellung 2575 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA143XCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 2943 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA143XCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Anzahl je Verpackung: 25 Stücke |
auf Bestellung 2943 Stücke: Lieferzeit 7-14 Tag (e) |
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| DTA143XUA | YANGJIE TECHNOLOGY | DTA143XUA-YAN PNP SMD transistors |
auf Bestellung 2650 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA143ZCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 1650 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA143ZCA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA143ZCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 25 Stücke |
auf Bestellung 1650 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA143ZUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA144ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA144ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DTA144EUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC113ZCA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: NPN Case: SOT23 Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 2875 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC113ZCA | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A Transistor Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DBL207 |
Hersteller: Yangjie Technology
Description: DBL 1000V 2.0A Diodes Bridge R
Description: DBL 1000V 2.0A Diodes Bridge R
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.2 EUR |
| 12500+ | 0.19 EUR |
| 25000+ | 0.18 EUR |
| 50000+ | 0.17 EUR |
| 100000+ | 0.15 EUR |
| 250000+ | 0.14 EUR |
| DBL207S |
Hersteller: Yangjie Technology
Description: DBLS 1000V 2.0A Diodes Bridge
Description: DBLS 1000V 2.0A Diodes Bridge
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.2 EUR |
| 7500+ | 0.19 EUR |
| 15000+ | 0.18 EUR |
| 30000+ | 0.17 EUR |
| 60000+ | 0.15 EUR |
| 150000+ | 0.14 EUR |
| DDTA123YCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC113ZCA |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.5A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.5A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1600+ | 0.044 EUR |
| DDTC113ZCA |
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.5A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 NPN 0.2W 0.5A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.07 EUR |
| 15000+ | 0.067 EUR |
| 30000+ | 0.063 EUR |
| 60000+ | 0.058 EUR |
| 120000+ | 0.053 EUR |
| 300000+ | 0.049 EUR |
| DDTC113ZCA |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.5A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.5A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1600+ | 0.044 EUR |
| 3000+ | 0.032 EUR |
| 15000+ | 0.03 EUR |
| DF25NA100 |
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Hersteller: Yangjie Technology
Description: TSB-5 1000V 25.0A Diodes Bridg
Packaging: Bulk
Part Status: Active
Description: TSB-5 1000V 25.0A Diodes Bridg
Packaging: Bulk
Part Status: Active
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 3.29 EUR |
| 480+ | 3.11 EUR |
| 960+ | 2.93 EUR |
| 1920+ | 2.75 EUR |
| 3840+ | 2.47 EUR |
| 9600+ | 2.29 EUR |
| DF25NA100 |
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Hersteller: YANGJIE TECHNOLOGY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT
Leads: flat pin
Version: flat
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1kV
Case: TSB-5
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT
Leads: flat pin
Version: flat
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1kV
Case: TSB-5
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 38+ | 1.92 EUR |
| 43+ | 1.7 EUR |
| DF25NA100 |
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Hersteller: YANGJIE TECHNOLOGY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT
Leads: flat pin
Version: flat
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1kV
Case: TSB-5
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT
Leads: flat pin
Version: flat
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1kV
Case: TSB-5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 38+ | 1.92 EUR |
| 43+ | 1.7 EUR |
| 96+ | 1.57 EUR |
| DF25NA160 |
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Hersteller: Yangjie Technology
Description: TSB-5 1600V 25.0A Diodes Bridg
Packaging: Bulk
Part Status: Active
Description: TSB-5 1600V 25.0A Diodes Bridg
Packaging: Bulk
Part Status: Active
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 4.02 EUR |
| 480+ | 3.8 EUR |
| 960+ | 3.58 EUR |
| 1920+ | 3.35 EUR |
| 3840+ | 3.02 EUR |
| 9600+ | 2.79 EUR |
| DF25NA80 |
Hersteller: Yangjie Technology
Description: Diodes - Bridge Rectifiers TSB-5
Packaging: Bulk
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: Diodes - Bridge Rectifiers TSB-5
Packaging: Bulk
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 3.29 EUR |
| 480+ | 3.11 EUR |
| 960+ | 2.93 EUR |
| 1920+ | 2.75 EUR |
| 3840+ | 2.47 EUR |
| 9600+ | 2.29 EUR |
| DF35NA100 |
Hersteller: YANGJIE TECHNOLOGY
DF35NA100-YAN Three phase diode bridge rectifiers
DF35NA100-YAN Three phase diode bridge rectifiers
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 23+ | 3.1 EUR |
| 96+ | 2.46 EUR |
| DF35NA80 |
Hersteller: Yangjie Technology
Description: Diodes - Bridge Rectifiers TSB-5
Packaging: Bulk
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: Diodes - Bridge Rectifiers TSB-5
Packaging: Bulk
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 5.13 EUR |
| 480+ | 4.84 EUR |
| 960+ | 4.56 EUR |
| 1920+ | 4.27 EUR |
| 3840+ | 3.85 EUR |
| 9600+ | 3.56 EUR |
| DGW15N120CTL |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/128ns
Switching Energy: 1.5mJ (on), 900µJ (off)
Test Condition: 600V, 15A, 33Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/128ns
Switching Energy: 1.5mJ (on), 900µJ (off)
Test Condition: 600V, 15A, 33Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 3.94 EUR |
| 9000+ | 3.72 EUR |
| 18000+ | 3.5 EUR |
| 36000+ | 3.28 EUR |
| 72000+ | 2.96 EUR |
| 180000+ | 2.74 EUR |
| DGW25N120CTL |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 158ns/331ns
Switching Energy: 1.8m (on), 1.4mJ (off)
Test Condition: 600V, 25A, 18Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 158ns/331ns
Switching Energy: 1.8m (on), 1.4mJ (off)
Test Condition: 600V, 25A, 18Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 5.68 EUR |
| 9000+ | 5.36 EUR |
| 18000+ | 5.05 EUR |
| 36000+ | 4.73 EUR |
| 72000+ | 4.26 EUR |
| 180000+ | 3.94 EUR |
| DGW30N65BTH |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 3.94 EUR |
| 9000+ | 3.72 EUR |
| 18000+ | 3.5 EUR |
| 36000+ | 3.28 EUR |
| 72000+ | 2.95 EUR |
| 180000+ | 2.73 EUR |
| DGW40N120CTL |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 45ns/180ns
Switching Energy: 3.8mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 428 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 45ns/180ns
Switching Energy: 3.8mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 428 W
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 7.57 EUR |
| 9000+ | 7.15 EUR |
| 18000+ | 6.73 EUR |
| 36000+ | 6.31 EUR |
| 72000+ | 5.68 EUR |
| 180000+ | 5.26 EUR |
| DGW50N65CTL1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 55ns/319ns
Switching Energy: 1.27mJ (on), 650µJ (off)
Test Condition: 300V, 50A, 10Ohm, 15V
Gate Charge: 450 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 326 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 55ns/319ns
Switching Energy: 1.27mJ (on), 650µJ (off)
Test Condition: 300V, 50A, 10Ohm, 15V
Gate Charge: 450 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 326 W
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 6.59 EUR |
| 9000+ | 6.22 EUR |
| 18000+ | 5.85 EUR |
| 36000+ | 5.49 EUR |
| 72000+ | 4.94 EUR |
| 180000+ | 4.57 EUR |
| DGW75N65CTL1 |
Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 75ns/468ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 300V, 75A, 10Ohm, 15V
Gate Charge: 580 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 75ns/468ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 300V, 75A, 10Ohm, 15V
Gate Charge: 580 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 11.35 EUR |
| 9000+ | 10.72 EUR |
| 18000+ | 10.09 EUR |
| 36000+ | 9.46 EUR |
| 72000+ | 8.51 EUR |
| 180000+ | 7.88 EUR |
| DS521-30L2 |
Hersteller: Yangjie Technology
Description: Diodes - Rectifiers - Single DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Description: Diodes - Rectifiers - Single DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
auf Bestellung 1000000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.035 EUR |
| 50000+ | 0.033 EUR |
| 100000+ | 0.032 EUR |
| 200000+ | 0.03 EUR |
| 400000+ | 0.026 EUR |
| 1000000+ | 0.025 EUR |
| DTA113ZCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 700+ | 0.1 EUR |
| DTA113ZCA |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Description: SOT-23 PNP 0.2W -0.1A Transisto
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.032 EUR |
| 15000+ | 0.031 EUR |
| 30000+ | 0.029 EUR |
| 60000+ | 0.027 EUR |
| 120000+ | 0.024 EUR |
| 300000+ | 0.023 EUR |
| DTA113ZCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
auf Bestellung 700 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 700+ | 0.1 EUR |
| 3000+ | 0.024 EUR |
| DTA113ZE |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.034 EUR |
| 15000+ | 0.032 EUR |
| 30000+ | 0.031 EUR |
| 60000+ | 0.029 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.024 EUR |
| DTA113ZUA |
Hersteller: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Description: SOT-323 PNP 0.2W -0.1A Transist
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.032 EUR |
| 15000+ | 0.031 EUR |
| 30000+ | 0.029 EUR |
| 60000+ | 0.027 EUR |
| 120000+ | 0.024 EUR |
| 300000+ | 0.023 EUR |
| DTA113ZUA |
Hersteller: YANGJIE TECHNOLOGY
DTA113ZUA-YAN PNP SMD transistors
DTA113ZUA-YAN PNP SMD transistors
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| 1125+ | 0.063 EUR |
| 3075+ | 0.023 EUR |
| 15000+ | 0.015 EUR |
| DTA114ECA |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.032 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.025 EUR |
| DTA114ECA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 3700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2050+ | 0.035 EUR |
| 3700+ | 0.02 EUR |
| DTA114ECA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
auf Bestellung 3700 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2050+ | 0.035 EUR |
| 3700+ | 0.02 EUR |
| DTA114EUA |
Hersteller: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: SOT-323 PNP 0.2W -0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.032 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.025 EUR |
| DTA114EUA |
Hersteller: YANGJIE TECHNOLOGY
DTA114EUA-YAN PNP SMD transistors
DTA114EUA-YAN PNP SMD transistors
auf Bestellung 1825 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1819+ | 0.039 EUR |
| 2400+ | 0.03 EUR |
| 15000+ | 0.018 EUR |
| DTA114YCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2050+ | 0.035 EUR |
| 2700+ | 0.027 EUR |
| DTA114YCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2700 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2050+ | 0.035 EUR |
| 2700+ | 0.027 EUR |
| 3000+ | 0.024 EUR |
| 15000+ | 0.015 EUR |
| DTA123ECA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 2375 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2275+ | 0.031 EUR |
| 2375+ | 0.03 EUR |
| DTA123ECA |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.032 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.025 EUR |
| DTA123ECA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2375 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2275+ | 0.031 EUR |
| 2375+ | 0.03 EUR |
| DTA123JCA |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| 15000+ | 0.04 EUR |
| 30000+ | 0.037 EUR |
| 60000+ | 0.035 EUR |
| 120000+ | 0.032 EUR |
| 300000+ | 0.03 EUR |
| DTA123JE |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.037 EUR |
| 15000+ | 0.035 EUR |
| 30000+ | 0.033 EUR |
| 60000+ | 0.032 EUR |
| 120000+ | 0.028 EUR |
| 300000+ | 0.026 EUR |
| DTA123JUA |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| 15000+ | 0.04 EUR |
| 30000+ | 0.037 EUR |
| 60000+ | 0.035 EUR |
| 120000+ | 0.032 EUR |
| 300000+ | 0.03 EUR |
| DTA124ECA |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| 15000+ | 0.04 EUR |
| 30000+ | 0.037 EUR |
| 60000+ | 0.035 EUR |
| 120000+ | 0.032 EUR |
| 300000+ | 0.03 EUR |
| DTA124EUA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.2W
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.2W
Frequency: 250MHz
auf Bestellung 2375 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2100+ | 0.034 EUR |
| 2375+ | 0.03 EUR |
| DTA124EUA |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.032 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.025 EUR |
| DTA124EUA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.2W
Frequency: 250MHz
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.2W
Frequency: 250MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2375 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2100+ | 0.034 EUR |
| 2375+ | 0.03 EUR |
| DTA143ECA |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.032 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.025 EUR |
| DTA143ECA |
Hersteller: YANGJIE TECHNOLOGY
DTA143ECA-YAN PNP SMD transistors
DTA143ECA-YAN PNP SMD transistors
auf Bestellung 4850 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1563+ | 0.046 EUR |
| 4546+ | 0.016 EUR |
| 4808+ | 0.015 EUR |
| DTA143EE |
Hersteller: Yangjie Technology
Description: SOT-523 PNP 0.15W -0.1A Transis
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: SOT-523 PNP 0.15W -0.1A Transis
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.046 EUR |
| 15000+ | 0.042 EUR |
| 30000+ | 0.04 EUR |
| 60000+ | 0.037 EUR |
| 120000+ | 0.033 EUR |
| 300000+ | 0.032 EUR |
| DTA143EUA |
Hersteller: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: SOT-323 PNP 0.2W -0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 15000+ | 0.033 EUR |
| 30000+ | 0.032 EUR |
| 60000+ | 0.03 EUR |
| 120000+ | 0.026 EUR |
| 300000+ | 0.025 EUR |
| DTA143EUA |
Hersteller: YANGJIE TECHNOLOGY
DTA143EUA-YAN PNP SMD transistors
DTA143EUA-YAN PNP SMD transistors
auf Bestellung 2575 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2263+ | 0.032 EUR |
| 2575+ | 0.027 EUR |
| 15000+ | 0.017 EUR |
| DTA143XCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2943 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2100+ | 0.034 EUR |
| DTA143XCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2943 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2100+ | 0.034 EUR |
| 2950+ | 0.024 EUR |
| DTA143XUA |
Hersteller: YANGJIE TECHNOLOGY
DTA143XUA-YAN PNP SMD transistors
DTA143XUA-YAN PNP SMD transistors
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2263+ | 0.032 EUR |
| 2650+ | 0.027 EUR |
| 15000+ | 0.017 EUR |
| DTA143ZCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1650+ | 0.043 EUR |
| DTA143ZCA |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.032 EUR |
| 15000+ | 0.03 EUR |
| 30000+ | 0.028 EUR |
| 60000+ | 0.026 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |
| DTA143ZCA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 25 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 25 Stücke
auf Bestellung 1650 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1650+ | 0.043 EUR |
| DTA143ZUA |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| 15000+ | 0.04 EUR |
| 30000+ | 0.037 EUR |
| 60000+ | 0.035 EUR |
| 120000+ | 0.032 EUR |
| 300000+ | 0.03 EUR |
| DTA144ECA |
Hersteller: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.043 EUR |
| 15000+ | 0.04 EUR |
| 30000+ | 0.038 EUR |
| 60000+ | 0.035 EUR |
| 120000+ | 0.031 EUR |
| 300000+ | 0.03 EUR |
| DTA144ECA |
Hersteller: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
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| DTA144EUA |
Hersteller: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.04 EUR |
| 15000+ | 0.038 EUR |
| 30000+ | 0.035 EUR |
| 60000+ | 0.033 EUR |
| 120000+ | 0.03 EUR |
| 300000+ | 0.028 EUR |
| DTC113ZCA |
Hersteller: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 0.04 EUR |
| 2875+ | 0.024 EUR |
| DTC113ZCA |
Hersteller: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Description: SOT-23 NPN 0.2W 0.1A Transistor
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.03 EUR |
| 15000+ | 0.028 EUR |
| 30000+ | 0.026 EUR |
| 60000+ | 0.025 EUR |
| 120000+ | 0.023 EUR |
| 300000+ | 0.021 EUR |












