| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| BXIB-L0305W-30G1200-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 305MM, Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0305W-30G120M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0305W-40G1200-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 305MM, Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0305W-40G120M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0305W-50E1200-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 305MM, Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0305W-50E120M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0508A-30G2000-A-13 | Bridgelux |
Description: LED MOD IB WHT LNR STRP 3000K Packaging: Tray Color: White, Warm Size / Dimension: 508.00mm L x 25.00mm W Type: LED Module Configuration: Linear Light Strip, Plug and Play Voltage - Forward (Vf) (Typ): 28.6V Height: 19.00mm Current - Test: 500mA Viewing Angle: 240° Lens Type: Flat Current - Max: 700mA Lumens/Watt @ Current - Test: 117 lm/W CCT (K): 3000K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 90 Light Emitting Surface (LES): 463.00mm L x 25.00mm W Temperature - Test: 40°C Luminous Flux @ Current/Temperature: 1680lm (Typ) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0508A-40H2000-A-13 | Bridgelux |
Description: LED MOD IB WHT LNR STRIP 4000K Packaging: Tray Color: White, Neutral Size / Dimension: 508.00mm L x 25.00mm W Type: LED Module Configuration: Linear Light Strip, Plug and Play Voltage - Forward (Vf) (Typ): 28.6V Height: 19.00mm Current - Test: 500mA Viewing Angle: 240° Lens Type: Flat Current - Max: 700mA Lumens/Watt @ Current - Test: 113 lm/W CCT (K): 4000K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 95 Light Emitting Surface (LES): 463.00mm L x 25.00mm W Temperature - Test: 40°C Luminous Flux @ Current/Temperature: 1620lm (Typ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0554W-50E2500-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 554MM, Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L0554W-50E250M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L1092A-27G3000-A-13 | Bridgelux |
Description: LED MOD IB WM WHT LNR STRP 2700K Packaging: Tray Color: White, Warm Size / Dimension: 1090.00mm L x 25.00mm W Type: LED Module Configuration: Linear Light Strip, Plug and Play Voltage - Forward (Vf) (Typ): 42.9V Height: 19.00mm Current - Test: 500mA Viewing Angle: 240° Lens Type: Flat Current - Max: 700mA Lumens/Watt @ Current - Test: 114 lm/W CCT (K): 2700K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 90 Light Emitting Surface (LES): 1041.00mm L x 25.00mm W Temperature - Test: 40°C Luminous Flux @ Current/Temperature: 2450lm (Typ) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L1092W-50E3000-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 1092MM Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXIB-L1092W-50E300M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXIR-85090BA-1300 | Bridgelux |
Description: EMITTER IR 850NM SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXIR-85090BA-1300 | Bridgelux |
Description: EMITTER IR 850NM SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXIR-85120AA-0900 | Bridgelux |
Description: IR 3535 SMD, 0900MW MIN, 850NM, |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXP10N60F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 48W Case: TO220F On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A |
auf Bestellung 469 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP10N65CF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 32nC |
auf Bestellung 576 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXP10N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 44W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 71nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXP10N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXP12N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 39nC |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP13N50F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Pulsed drain current: 52A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP13N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 52A Power dissipation: 158W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXP16N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Power dissipation: 43W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A Gate charge: 35nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BXP18N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252 Case: TO252 Mounting: SMD On-state resistance: 0.18Ω Drain current: 18A Gate-source voltage: ±30V Power dissipation: 90W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tube Polarisation: unipolar Gate charge: 23nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXP18N20F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F Case: TO220F Mounting: THT On-state resistance: 0.18Ω Drain current: 11A Gate-source voltage: ±30V Power dissipation: 55W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 23nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BXP18N20H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Mounting: THT Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXP18N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220 Case: TO220 Mounting: THT On-state resistance: 0.18Ω Drain current: 18A Gate-source voltage: ±30V Power dissipation: 95W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 23nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXP18N50F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 679 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXP20N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 39W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXP20N50H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXP2N20L | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3 Power dissipation: 2W Kind of package: reel; tape Case: SOT23-3 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.5nC On-state resistance: 1.8Ω Drain current: 1.2A Pulsed drain current: 8A Gate-source voltage: ±30V Drain-source voltage: 185V |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP2N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Power dissipation: 44W Case: TO252 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 8A Gate charge: 8.5nC |
auf Bestellung 1199 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXP2N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Case: TO220F Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BXP2N65N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 3W Case: SOT223-3L Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Pulsed drain current: 8A Gate charge: 8.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXP2N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Power dissipation: 44W Case: TO251 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 8A Gate charge: 8.5nC |
auf Bestellung 1425 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP4N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 13.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXP4N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 77W Gate charge: 13nC |
auf Bestellung 11888 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP4N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 37W Gate charge: 13nC |
auf Bestellung 2261 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP4N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 77W Gate charge: 13nC |
auf Bestellung 1565 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BXP4N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Case: TO220F Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXP6N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 24A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXP7N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 21nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BXP7N60F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 45W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 21nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXP7N60P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 166W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 21nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BXP7N60U | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 145W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 21nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXP7N65CF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 46W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 356 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP7N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP7N65P | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 167W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 673 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP7N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXP7N80F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Power dissipation: 43.9W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 40nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXP8N50D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 32A Power dissipation: 100W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BXP8N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 105W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BXP8N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 8A Case: TO220F Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BXPD-E75T65HD-0000 | BRIDGELUX |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 65A; 333W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 65A Power dissipation: 333W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 327nC Kind of package: tube |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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BXPR-WN-01-A | BRIDGELUX |
Description: BRIDGELUX - BXPR-WN-01-A - Handheld Wand, USB Cable, NFC Programmer, Vesta Flex BXPR SeriestariffCode: 94054099 Art des Zubehörs: Lesestift, tragbar, mit USB-Kabel productTraceability: No SVHC: No SVHC (21-Jan-2025) rohsCompliant: YES euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Zur Verwendung mit: NFC-Programmierer der Produktreihe Vesta Flex BXPR von Bridgelux Produktpalette: Vesta Flex BXPR |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXPR-WN-01-A | Bridgelux |
Description: NFC PROGRAMMING TOOLPackaging: Bulk For Use With/Related Products: LED Driver Type: Programmer Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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BXPX-27E0400-A-0300 | Bridgelux |
Description: LED SM4 380LM WM WHT 2725K 1X4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BXPX-27E0400-A-0300-SB | Bridgelux | Description: LED SM4 380LM WM WHT 2725K 1X4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BXIB-L0508A-30G2000-A-13 |
Hersteller: Bridgelux
Description: LED MOD IB WHT LNR STRP 3000K
Packaging: Tray
Color: White, Warm
Size / Dimension: 508.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 28.6V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 117 lm/W
CCT (K): 3000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 463.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1680lm (Typ)
Part Status: Obsolete
Description: LED MOD IB WHT LNR STRP 3000K
Packaging: Tray
Color: White, Warm
Size / Dimension: 508.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 28.6V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 117 lm/W
CCT (K): 3000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 463.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1680lm (Typ)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXIB-L0508A-40H2000-A-13 |
Hersteller: Bridgelux
Description: LED MOD IB WHT LNR STRIP 4000K
Packaging: Tray
Color: White, Neutral
Size / Dimension: 508.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 28.6V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 113 lm/W
CCT (K): 4000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 95
Light Emitting Surface (LES): 463.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1620lm (Typ)
Description: LED MOD IB WHT LNR STRIP 4000K
Packaging: Tray
Color: White, Neutral
Size / Dimension: 508.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 28.6V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 113 lm/W
CCT (K): 4000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 95
Light Emitting Surface (LES): 463.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1620lm (Typ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXIB-L1092A-27G3000-A-13 |
Hersteller: Bridgelux
Description: LED MOD IB WM WHT LNR STRP 2700K
Packaging: Tray
Color: White, Warm
Size / Dimension: 1090.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 42.9V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 114 lm/W
CCT (K): 2700K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 1041.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 2450lm (Typ)
Part Status: Obsolete
Description: LED MOD IB WM WHT LNR STRP 2700K
Packaging: Tray
Color: White, Warm
Size / Dimension: 1090.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 42.9V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 114 lm/W
CCT (K): 2700K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 1041.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 2450lm (Typ)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXIR-85090BA-1300 |
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Hersteller: Bridgelux
Description: EMITTER IR 850NM SMD
Description: EMITTER IR 850NM SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BXIR-85090BA-1300 |
![]() |
Hersteller: Bridgelux
Description: EMITTER IR 850NM SMD
Description: EMITTER IR 850NM SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXIR-85120AA-0900 |
![]() |
Hersteller: Bridgelux
Description: IR 3535 SMD, 0900MW MIN, 850NM,
Description: IR 3535 SMD, 0900MW MIN, 850NM,
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP10N60F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 1.09 EUR |
| 89+ | 0.96 EUR |
| 99+ | 0.86 EUR |
| 112+ | 0.76 EUR |
| 250+ | 0.69 EUR |
| BXP10N65CF |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 32nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 32nC
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 0.98 EUR |
| 116+ | 0.74 EUR |
| 134+ | 0.64 EUR |
| 147+ | 0.58 EUR |
| BXP10N80F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 71nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 71nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP10N90F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP12N65F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 1.65 EUR |
| 65+ | 1.33 EUR |
| 73+ | 1.18 EUR |
| 100+ | 0.99 EUR |
| BXP13N50F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 1.54 EUR |
| 70+ | 1.23 EUR |
| 78+ | 1.09 EUR |
| 100+ | 0.93 EUR |
| 250+ | 0.83 EUR |
| 500+ | 0.73 EUR |
| BXP13N50P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP16N65F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 35nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 35nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BXP18N20D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP18N20F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 11A
Gate-source voltage: ±30V
Power dissipation: 55W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 11A
Gate-source voltage: ±30V
Power dissipation: 55W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BXP18N20H |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP18N20P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP18N50F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 2.19 EUR |
| 49+ | 1.75 EUR |
| 55+ | 1.57 EUR |
| 100+ | 1.32 EUR |
| 250+ | 1.19 EUR |
| 500+ | 1.05 EUR |
| BXP20N50F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP20N50H |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP2N20L |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Power dissipation: 2W
Kind of package: reel; tape
Case: SOT23-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.5nC
On-state resistance: 1.8Ω
Drain current: 1.2A
Pulsed drain current: 8A
Gate-source voltage: ±30V
Drain-source voltage: 185V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Power dissipation: 2W
Kind of package: reel; tape
Case: SOT23-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.5nC
On-state resistance: 1.8Ω
Drain current: 1.2A
Pulsed drain current: 8A
Gate-source voltage: ±30V
Drain-source voltage: 185V
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 532+ | 0.15 EUR |
| 596+ | 0.14 EUR |
| 705+ | 0.12 EUR |
| 794+ | 0.11 EUR |
| 893+ | 0.095 EUR |
| 1000+ | 0.09 EUR |
| BXP2N65D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
auf Bestellung 1199 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 295+ | 0.29 EUR |
| 363+ | 0.24 EUR |
| 407+ | 0.21 EUR |
| 486+ | 0.18 EUR |
| 538+ | 0.15 EUR |
| 610+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| BXP2N65F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP2N65N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP2N65U |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
auf Bestellung 1425 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 264+ | 0.32 EUR |
| 332+ | 0.26 EUR |
| 371+ | 0.23 EUR |
| 443+ | 0.19 EUR |
| 491+ | 0.18 EUR |
| 556+ | 0.15 EUR |
| 975+ | 0.14 EUR |
| BXP4N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 13.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 13.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP4N65D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
auf Bestellung 11888 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.46 EUR |
| 228+ | 0.37 EUR |
| 256+ | 0.33 EUR |
| 304+ | 0.29 EUR |
| 336+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.19 EUR |
| BXP4N65F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 37W
Gate charge: 13nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 37W
Gate charge: 13nC
auf Bestellung 2261 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 217+ | 0.39 EUR |
| 243+ | 0.35 EUR |
| 290+ | 0.3 EUR |
| 321+ | 0.26 EUR |
| 480+ | 0.24 EUR |
| 960+ | 0.21 EUR |
| BXP4N65U |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
auf Bestellung 1565 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| 244+ | 0.35 EUR |
| 274+ | 0.31 EUR |
| 325+ | 0.26 EUR |
| 360+ | 0.24 EUR |
| 525+ | 0.2 EUR |
| 975+ | 0.19 EUR |
| BXP4N80D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP4N80F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP6N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP7N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP7N60F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP7N60P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP7N60U |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP7N65CF |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.99 EUR |
| 110+ | 0.77 EUR |
| 137+ | 0.62 EUR |
| 162+ | 0.52 EUR |
| 250+ | 0.48 EUR |
| BXP7N65D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 1.21 EUR |
| 102+ | 0.84 EUR |
| 126+ | 0.68 EUR |
| 150+ | 0.57 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| BXP7N65P |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 673 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 64+ | 1.34 EUR |
| 93+ | 0.92 EUR |
| 104+ | 0.82 EUR |
| 124+ | 0.69 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.55 EUR |
| BXP7N65U |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXP7N80F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 40nC
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| BXP8N50D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BXP8N50P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| BXP8N90F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
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| BXPD-E75T65HD-0000 |
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Hersteller: BRIDGELUX
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 65A; 333W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 65A
Power dissipation: 333W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 327nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 65A; 333W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 65A
Power dissipation: 333W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 327nC
Kind of package: tube
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.45 EUR |
| 28+ | 3.09 EUR |
| 32+ | 2.74 EUR |
| 120+ | 2.46 EUR |
| BXPR-WN-01-A |
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Hersteller: BRIDGELUX
Description: BRIDGELUX - BXPR-WN-01-A - Handheld Wand, USB Cable, NFC Programmer, Vesta Flex BXPR Series
tariffCode: 94054099
Art des Zubehörs: Lesestift, tragbar, mit USB-Kabel
productTraceability: No
SVHC: No SVHC (21-Jan-2025)
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Zur Verwendung mit: NFC-Programmierer der Produktreihe Vesta Flex BXPR von Bridgelux
Produktpalette: Vesta Flex BXPR
Description: BRIDGELUX - BXPR-WN-01-A - Handheld Wand, USB Cable, NFC Programmer, Vesta Flex BXPR Series
tariffCode: 94054099
Art des Zubehörs: Lesestift, tragbar, mit USB-Kabel
productTraceability: No
SVHC: No SVHC (21-Jan-2025)
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Zur Verwendung mit: NFC-Programmierer der Produktreihe Vesta Flex BXPR von Bridgelux
Produktpalette: Vesta Flex BXPR
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 380.75 EUR |
| BXPR-WN-01-A |
![]() |
Hersteller: Bridgelux
Description: NFC PROGRAMMING TOOL
Packaging: Bulk
For Use With/Related Products: LED Driver
Type: Programmer
Contents: Board(s)
Description: NFC PROGRAMMING TOOL
Packaging: Bulk
For Use With/Related Products: LED Driver
Type: Programmer
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 211.93 EUR |
| BXPX-27E0400-A-0300 |
![]() |
Hersteller: Bridgelux
Description: LED SM4 380LM WM WHT 2725K 1X4
Description: LED SM4 380LM WM WHT 2725K 1X4
Produkt ist nicht verfügbar
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| BXPX-27E0400-A-0300-SB |
Hersteller: Bridgelux
Description: LED SM4 380LM WM WHT 2725K 1X4
Description: LED SM4 380LM WM WHT 2725K 1X4
Produkt ist nicht verfügbar
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