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BXIR-85090BA-1300 BXIR-85090BA-1300 Bridgelux DS301%20Bridgelux%20IR%203535%203W%20Rev.%20A%2020160721.pdf Description: EMITTER IR 850NM SMD
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BXIR-85120AA-0900 BXIR-85120AA-0900 Bridgelux DS300%20Bridgelux%20IR%203535%201W%20Rev.%20A%2020160721.pdf Description: IR 3535 SMD, 0900MW MIN, 850NM,
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BXP10N60F BXP10N60F BRIDGELUX BXP10N60F-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
93+0.78 EUR
103+0.69 EUR
116+0.62 EUR
250+0.55 EUR
Mindestbestellmenge: 81
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BXP10N60F BXP10N60F BRIDGELUX BXP10N60F-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 681 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
93+0.78 EUR
103+0.69 EUR
116+0.62 EUR
250+0.55 EUR
1000+0.54 EUR
Mindestbestellmenge: 81
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BXP10N65CF BXP10N65CF BRIDGELUX BXP10N65C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
auf Bestellung 665 Stücke:
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91+0.79 EUR
119+0.6 EUR
137+0.52 EUR
149+0.48 EUR
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BXP10N65CF BXP10N65CF BRIDGELUX BXP10N65C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 665 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
119+0.6 EUR
137+0.52 EUR
149+0.48 EUR
Mindestbestellmenge: 91
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BXP10N80F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
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BXP10N90F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP12N65F BXP12N65F BRIDGELUX BXP12N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
auf Bestellung 342 Stücke:
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54+1.34 EUR
67+1.08 EUR
75+0.96 EUR
100+0.81 EUR
250+0.73 EUR
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BXP12N65F BXP12N65F BRIDGELUX BXP12N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 342 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
67+1.08 EUR
75+0.96 EUR
100+0.81 EUR
250+0.73 EUR
500+0.64 EUR
1000+0.61 EUR
Mindestbestellmenge: 54
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BXP13N50F BXP13N50F BRIDGELUX BXP13N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.26 EUR
72+1.01 EUR
80+0.9 EUR
100+0.76 EUR
250+0.68 EUR
500+0.6 EUR
Mindestbestellmenge: 57
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BXP13N50F BXP13N50F BRIDGELUX BXP13N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 953 Stücke:
Lieferzeit 7-14 Tag (e)
57+1.26 EUR
72+1.01 EUR
80+0.9 EUR
100+0.76 EUR
250+0.68 EUR
500+0.6 EUR
1000+0.59 EUR
Mindestbestellmenge: 57
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BXP13N50P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP16N65F BXP16N65F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5DED9C90C0D2&compId=BXP16N65.pdf?ci_sign=3f2dd72d3cc9b160890d51a3df4ac4ba5a020111 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP18N20D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
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BXP18N20H BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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BXP18N20P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
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BXP18N50F BXP18N50F BRIDGELUX BXP18N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
50+1.44 EUR
56+1.29 EUR
100+1.08 EUR
250+0.98 EUR
500+0.86 EUR
Mindestbestellmenge: 40
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BXP18N50F BXP18N50F BRIDGELUX BXP18N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 876 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.8 EUR
50+1.44 EUR
56+1.29 EUR
100+1.08 EUR
250+0.98 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 40
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BXP20N50F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP20N50H BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP2N20L BRIDGELUX BXP2N20L SMD N channel transistors
auf Bestellung 2234 Stücke:
Lieferzeit 7-14 Tag (e)
424+0.17 EUR
848+0.084 EUR
910+0.079 EUR
3000+0.076 EUR
Mindestbestellmenge: 424
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BXP2N65D BXP2N65D BRIDGELUX BXP2N65.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
371+0.19 EUR
417+0.17 EUR
496+0.14 EUR
550+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 295
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BXP2N65D BXP2N65D BRIDGELUX BXP2N65.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1628 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
371+0.19 EUR
417+0.17 EUR
496+0.14 EUR
550+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP2N65N BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP2N65U BXP2N65U BRIDGELUX BXP2N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
auf Bestellung 1467 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
341+0.21 EUR
379+0.19 EUR
451+0.16 EUR
500+0.14 EUR
569+0.13 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65U BXP2N65U BRIDGELUX BXP2N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1467 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
341+0.21 EUR
379+0.19 EUR
451+0.16 EUR
500+0.14 EUR
569+0.13 EUR
Mindestbestellmenge: 278
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BXP3N1KD BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; Idm: 12A; 90W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP3N1KF BXP3N1KF BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7556B47F40D2&compId=BXP3N1K.pdf?ci_sign=738fa789b68c7f6001f34af0687d8fe147cc0c16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 12A
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
88+0.82 EUR
110+0.65 EUR
147+0.49 EUR
250+0.44 EUR
500+0.39 EUR
Mindestbestellmenge: 77
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BXP3N1KF BXP3N1KF BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7556B47F40D2&compId=BXP3N1K.pdf?ci_sign=738fa789b68c7f6001f34af0687d8fe147cc0c16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)
77+0.93 EUR
88+0.82 EUR
110+0.65 EUR
147+0.49 EUR
250+0.44 EUR
500+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N60D BXP4N60D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
169+0.42 EUR
190+0.38 EUR
226+0.32 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N60D BXP4N60D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1281 Stücke:
Lieferzeit 7-14 Tag (e)
136+0.53 EUR
169+0.42 EUR
190+0.38 EUR
226+0.32 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65D BXP4N65D BRIDGELUX BXP4N65.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1942 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
232+0.31 EUR
260+0.28 EUR
309+0.23 EUR
343+0.21 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65D BXP4N65D BRIDGELUX BXP4N65.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1942 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
232+0.31 EUR
260+0.28 EUR
309+0.23 EUR
343+0.21 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65F BXP4N65F BRIDGELUX BXP4N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
221+0.32 EUR
247+0.29 EUR
293+0.24 EUR
327+0.22 EUR
480+0.19 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65F BXP4N65F BRIDGELUX BXP4N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1650 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
221+0.32 EUR
247+0.29 EUR
293+0.24 EUR
327+0.22 EUR
480+0.19 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65U BXP4N65U BRIDGELUX BXP4N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
248+0.29 EUR
278+0.26 EUR
329+0.22 EUR
368+0.19 EUR
525+0.17 EUR
975+0.15 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65U BXP4N65U BRIDGELUX BXP4N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1587 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
248+0.29 EUR
278+0.26 EUR
329+0.22 EUR
368+0.19 EUR
525+0.17 EUR
975+0.15 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N80D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N80F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP6N60D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60U BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65CF BXP7N65CF BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
114+0.63 EUR
141+0.51 EUR
167+0.43 EUR
250+0.39 EUR
500+0.34 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65CF BXP7N65CF BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 509 Stücke:
Lieferzeit 7-14 Tag (e)
88+0.82 EUR
114+0.63 EUR
141+0.51 EUR
167+0.43 EUR
250+0.39 EUR
500+0.34 EUR
1000+0.33 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65D BXP7N65D BRIDGELUX BXP7N65.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2419 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
105+0.69 EUR
130+0.55 EUR
154+0.46 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65D BXP7N65D BRIDGELUX BXP7N65.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2419 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
105+0.69 EUR
130+0.55 EUR
154+0.46 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65P BXP7N65P BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 689 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
96+0.75 EUR
107+0.67 EUR
128+0.56 EUR
250+0.5 EUR
500+0.45 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65P BXP7N65P BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 689 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
96+0.75 EUR
107+0.67 EUR
128+0.56 EUR
250+0.5 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65U BXP7N65U BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N80F BXP7N80F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7FA5A62B40D2&compId=BXP7N80.pdf?ci_sign=7c5bcea4c5325f52eb91e75b26644dcccc8f4f44 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 28A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N50D BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE81F1F08300D2&compId=BXP8N50.pdf?ci_sign=f98aa5d24627c912e27ad64f7c9a10ecfaf4f7d9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N50P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N90F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E04T60DD-0000 BRIDGELUX Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; TO252
Mounting: SMD
Kind of package: reel
Case: TO252
Collector current: 4A
Type of transistor: IGBT
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E06T60DD-0000 BRIDGELUX Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; TO252
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Case: TO252
Mounting: SMD
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E75T65HD-0000 BXPD-E75T65HD-0000 BRIDGELUX BXPD-E75T65HD-0000.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 65A; 333W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 65A
Power dissipation: 333W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 327nC
Kind of package: tube
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
28+2.59 EUR
32+2.3 EUR
120+2.06 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BXIR-85090BA-1300 DS301%20Bridgelux%20IR%203535%203W%20Rev.%20A%2020160721.pdf
BXIR-85090BA-1300
Hersteller: Bridgelux
Description: EMITTER IR 850NM SMD
Produkt ist nicht verfügbar
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BXIR-85120AA-0900 DS300%20Bridgelux%20IR%203535%201W%20Rev.%20A%2020160721.pdf
BXIR-85120AA-0900
Hersteller: Bridgelux
Description: IR 3535 SMD, 0900MW MIN, 850NM,
Produkt ist nicht verfügbar
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BXP10N60F BXP10N60F-DTE.pdf
BXP10N60F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
93+0.78 EUR
103+0.69 EUR
116+0.62 EUR
250+0.55 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N60F BXP10N60F-DTE.pdf
BXP10N60F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 681 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
81+0.89 EUR
93+0.78 EUR
103+0.69 EUR
116+0.62 EUR
250+0.55 EUR
1000+0.54 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N65CF BXP10N65C.pdf
BXP10N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
119+0.6 EUR
137+0.52 EUR
149+0.48 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N65CF BXP10N65C.pdf
BXP10N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 665 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
91+0.79 EUR
119+0.6 EUR
137+0.52 EUR
149+0.48 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N80F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N90F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP12N65F BXP12N65.pdf
BXP12N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
67+1.08 EUR
75+0.96 EUR
100+0.81 EUR
250+0.73 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
BXP12N65F BXP12N65.pdf
BXP12N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 342 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
54+1.34 EUR
67+1.08 EUR
75+0.96 EUR
100+0.81 EUR
250+0.73 EUR
500+0.64 EUR
1000+0.61 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
BXP13N50F BXP13N50.pdf
BXP13N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
72+1.01 EUR
80+0.9 EUR
100+0.76 EUR
250+0.68 EUR
500+0.6 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
BXP13N50F BXP13N50.pdf
BXP13N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 953 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
57+1.26 EUR
72+1.01 EUR
80+0.9 EUR
100+0.76 EUR
250+0.68 EUR
500+0.6 EUR
1000+0.59 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
BXP13N50P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP16N65F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5DED9C90C0D2&compId=BXP16N65.pdf?ci_sign=3f2dd72d3cc9b160890d51a3df4ac4ba5a020111
BXP16N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20H
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N50F BXP18N50.pdf
BXP18N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
50+1.44 EUR
56+1.29 EUR
100+1.08 EUR
250+0.98 EUR
500+0.86 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N50F BXP18N50.pdf
BXP18N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 876 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.8 EUR
50+1.44 EUR
56+1.29 EUR
100+1.08 EUR
250+0.98 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BXP20N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP20N50H
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N20L
Hersteller: BRIDGELUX
BXP2N20L SMD N channel transistors
auf Bestellung 2234 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
424+0.17 EUR
848+0.084 EUR
910+0.079 EUR
3000+0.076 EUR
Mindestbestellmenge: 424
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65D BXP2N65.pdf
BXP2N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
371+0.19 EUR
417+0.17 EUR
496+0.14 EUR
550+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65D BXP2N65.pdf
BXP2N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1628 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
295+0.24 EUR
371+0.19 EUR
417+0.17 EUR
496+0.14 EUR
550+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65N
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65U BXP2N65.pdf
BXP2N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
auf Bestellung 1467 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
341+0.21 EUR
379+0.19 EUR
451+0.16 EUR
500+0.14 EUR
569+0.13 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65U BXP2N65.pdf
BXP2N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1467 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
278+0.26 EUR
341+0.21 EUR
379+0.19 EUR
451+0.16 EUR
500+0.14 EUR
569+0.13 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N1KD
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; Idm: 12A; 90W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N1KF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7556B47F40D2&compId=BXP3N1K.pdf?ci_sign=738fa789b68c7f6001f34af0687d8fe147cc0c16
BXP3N1KF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 12A
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
88+0.82 EUR
110+0.65 EUR
147+0.49 EUR
250+0.44 EUR
500+0.39 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N1KF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7556B47F40D2&compId=BXP3N1K.pdf?ci_sign=738fa789b68c7f6001f34af0687d8fe147cc0c16
BXP3N1KF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
77+0.93 EUR
88+0.82 EUR
110+0.65 EUR
147+0.49 EUR
250+0.44 EUR
500+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N60D
BXP4N60D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
169+0.42 EUR
190+0.38 EUR
226+0.32 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N60D
BXP4N60D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1281 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
136+0.53 EUR
169+0.42 EUR
190+0.38 EUR
226+0.32 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65D BXP4N65.pdf
BXP4N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1942 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
232+0.31 EUR
260+0.28 EUR
309+0.23 EUR
343+0.21 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65D BXP4N65.pdf
BXP4N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1942 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
186+0.39 EUR
232+0.31 EUR
260+0.28 EUR
309+0.23 EUR
343+0.21 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65F BXP4N65.pdf
BXP4N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
221+0.32 EUR
247+0.29 EUR
293+0.24 EUR
327+0.22 EUR
480+0.19 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65F BXP4N65.pdf
BXP4N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1650 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
173+0.41 EUR
221+0.32 EUR
247+0.29 EUR
293+0.24 EUR
327+0.22 EUR
480+0.19 EUR
Mindestbestellmenge: 173
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BXP4N65U BXP4N65.pdf
BXP4N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
248+0.29 EUR
278+0.26 EUR
329+0.22 EUR
368+0.19 EUR
525+0.17 EUR
975+0.15 EUR
Mindestbestellmenge: 200
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BXP4N65U BXP4N65.pdf
BXP4N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1587 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
200+0.36 EUR
248+0.29 EUR
278+0.26 EUR
329+0.22 EUR
368+0.19 EUR
525+0.17 EUR
975+0.15 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N80D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N80F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP6N60D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BXP7N65CF BXP7N65.pdf
BXP7N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
114+0.63 EUR
141+0.51 EUR
167+0.43 EUR
250+0.39 EUR
500+0.34 EUR
Mindestbestellmenge: 88
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BXP7N65CF BXP7N65.pdf
BXP7N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 509 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
88+0.82 EUR
114+0.63 EUR
141+0.51 EUR
167+0.43 EUR
250+0.39 EUR
500+0.34 EUR
1000+0.33 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65D BXP7N65.pdf
BXP7N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
105+0.69 EUR
130+0.55 EUR
154+0.46 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65D BXP7N65.pdf
BXP7N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2419 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
72+1 EUR
105+0.69 EUR
130+0.55 EUR
154+0.46 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65P BXP7N65.pdf
BXP7N65P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 689 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
96+0.75 EUR
107+0.67 EUR
128+0.56 EUR
250+0.5 EUR
500+0.45 EUR
Mindestbestellmenge: 65
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BXP7N65P BXP7N65.pdf
BXP7N65P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 689 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
65+1.1 EUR
96+0.75 EUR
107+0.67 EUR
128+0.56 EUR
250+0.5 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65U BXP7N65.pdf
BXP7N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N80F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7FA5A62B40D2&compId=BXP7N80.pdf?ci_sign=7c5bcea4c5325f52eb91e75b26644dcccc8f4f44
BXP7N80F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 28A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N50D pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE81F1F08300D2&compId=BXP8N50.pdf?ci_sign=f98aa5d24627c912e27ad64f7c9a10ecfaf4f7d9
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N50P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N90F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E04T60DD-0000
Hersteller: BRIDGELUX
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; TO252
Mounting: SMD
Kind of package: reel
Case: TO252
Collector current: 4A
Type of transistor: IGBT
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E06T60DD-0000
Hersteller: BRIDGELUX
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; TO252
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Case: TO252
Mounting: SMD
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E75T65HD-0000 BXPD-E75T65HD-0000.pdf
BXPD-E75T65HD-0000
Hersteller: BRIDGELUX
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 65A; 333W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 65A
Power dissipation: 333W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 327nC
Kind of package: tube
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.59 EUR
32+2.3 EUR
120+2.06 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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