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BXP10N65CF BXP10N65CF BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE52C1527DE0D2&compId=BXP10N65C.pdf?ci_sign=4216791ca9da7753a90cedb4c265b4ff5403c768 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 32nC
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
117+0.61 EUR
135+0.53 EUR
148+0.49 EUR
250+0.48 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N65CF BXP10N65CF BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE52C1527DE0D2&compId=BXP10N65C.pdf?ci_sign=4216791ca9da7753a90cedb4c265b4ff5403c768 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 32nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 701 Stücke:
Lieferzeit 7-14 Tag (e)
90+0.8 EUR
117+0.61 EUR
135+0.53 EUR
148+0.49 EUR
250+0.48 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N80F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N90F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP12N65F BXP12N65F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE574E24AC40D2&compId=BXP12N65.pdf?ci_sign=7ee93f96259d83057e67ec78c2ebaca459d28b6c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Pulsed drain current: 48A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
65+1.11 EUR
73+0.99 EUR
100+0.83 EUR
250+0.75 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
BXP12N65F BXP12N65F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE574E24AC40D2&compId=BXP12N65.pdf?ci_sign=7ee93f96259d83057e67ec78c2ebaca459d28b6c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Pulsed drain current: 48A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 347 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
65+1.11 EUR
73+0.99 EUR
100+0.83 EUR
250+0.75 EUR
500+0.66 EUR
1000+0.6 EUR
Mindestbestellmenge: 52
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BXP13N50F BXP13N50F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5AAEF10620D2&compId=BXP13N50.pdf?ci_sign=80f0289890f2193954309ae2ac8df37b7313d44f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
70+1.03 EUR
78+0.92 EUR
100+0.77 EUR
250+0.69 EUR
500+0.61 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BXP13N50F BXP13N50F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5AAEF10620D2&compId=BXP13N50.pdf?ci_sign=80f0289890f2193954309ae2ac8df37b7313d44f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 953 Stücke:
Lieferzeit 7-14 Tag (e)
56+1.29 EUR
70+1.03 EUR
78+0.92 EUR
100+0.77 EUR
250+0.69 EUR
500+0.61 EUR
1000+0.58 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BXP13N50P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP16N65F BXP16N65F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5DED9C90C0D2&compId=BXP16N65.pdf?ci_sign=3f2dd72d3cc9b160890d51a3df4ac4ba5a020111 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 64A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20F BXP18N20F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE61875DDB20D2&compId=BXP18N20.pdf?ci_sign=8c4cdc310516fe000dbb7cfe17b9136ef07c2d6c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 11A
Gate-source voltage: ±30V
Power dissipation: 55W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
86+0.84 EUR
96+0.75 EUR
131+0.55 EUR
139+0.52 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20H BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N50F BXP18N50F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE695C4936E0D2&compId=BXP18N50.pdf?ci_sign=02ea48af69631a49103d191b5a7c943710a60986 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 881 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
49+1.47 EUR
55+1.31 EUR
100+1.11 EUR
250+1 EUR
500+0.88 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N50F BXP18N50F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE695C4936E0D2&compId=BXP18N50.pdf?ci_sign=02ea48af69631a49103d191b5a7c943710a60986 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 881 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.83 EUR
49+1.47 EUR
55+1.31 EUR
100+1.11 EUR
250+1 EUR
500+0.88 EUR
1000+0.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BXP20N50F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP20N50H BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N20L BXP2N20L BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE6C9DC7B100D2&compId=BXP2N20L.pdf?ci_sign=2bc7871620dc1fe11b3350c518952bc3ba1dc075 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 185V
Drain current: 1.2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: SOT23-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2274 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
550+0.13 EUR
610+0.12 EUR
725+0.099 EUR
863+0.083 EUR
926+0.077 EUR
1000+0.076 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N20L BXP2N20L BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE6C9DC7B100D2&compId=BXP2N20L.pdf?ci_sign=2bc7871620dc1fe11b3350c518952bc3ba1dc075 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 185V
Drain current: 1.2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: SOT23-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2274 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
550+0.13 EUR
610+0.12 EUR
725+0.099 EUR
863+0.083 EUR
926+0.077 EUR
1000+0.076 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65D BXP2N65D BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE716468AD80D2&compId=BXP2N65.pdf?ci_sign=6cbd6c9803d57b74b61c2b32c453835bb7299010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
365+0.2 EUR
410+0.17 EUR
486+0.15 EUR
538+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65D BXP2N65D BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE716468AD80D2&compId=BXP2N65.pdf?ci_sign=6cbd6c9803d57b74b61c2b32c453835bb7299010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1628 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
365+0.2 EUR
410+0.17 EUR
486+0.15 EUR
538+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65N BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65U BXP2N65U BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE716468AD80D2&compId=BXP2N65.pdf?ci_sign=6cbd6c9803d57b74b61c2b32c453835bb7299010 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
334+0.21 EUR
374+0.19 EUR
443+0.16 EUR
491+0.15 EUR
556+0.13 EUR
975+0.12 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65U BXP2N65U BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE716468AD80D2&compId=BXP2N65.pdf?ci_sign=6cbd6c9803d57b74b61c2b32c453835bb7299010 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1495 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
334+0.21 EUR
374+0.19 EUR
443+0.16 EUR
491+0.15 EUR
556+0.13 EUR
975+0.12 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N1KF BXP3N1KF BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7556B47F40D2&compId=BXP3N1K.pdf?ci_sign=738fa789b68c7f6001f34af0687d8fe147cc0c16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
89+0.81 EUR
111+0.65 EUR
174+0.41 EUR
184+0.39 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N1KF BXP3N1KF BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7556B47F40D2&compId=BXP3N1K.pdf?ci_sign=738fa789b68c7f6001f34af0687d8fe147cc0c16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 795 Stücke:
Lieferzeit 7-14 Tag (e)
77+0.93 EUR
89+0.81 EUR
111+0.65 EUR
174+0.41 EUR
184+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N50D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N60D BXP4N60D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
169+0.42 EUR
190+0.38 EUR
226+0.32 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N60D BXP4N60D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1281 Stücke:
Lieferzeit 7-14 Tag (e)
136+0.53 EUR
169+0.42 EUR
190+0.38 EUR
226+0.32 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65D BXP4N65D BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
229+0.31 EUR
257+0.28 EUR
305+0.23 EUR
338+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65D BXP4N65D BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1945 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
229+0.31 EUR
257+0.28 EUR
305+0.23 EUR
338+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65F BXP4N65F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1661 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
218+0.33 EUR
244+0.29 EUR
291+0.25 EUR
323+0.22 EUR
480+0.2 EUR
960+0.19 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65F BXP4N65F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1661 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
218+0.33 EUR
244+0.29 EUR
291+0.25 EUR
323+0.22 EUR
480+0.2 EUR
960+0.19 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65U BXP4N65U BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1601 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
247+0.29 EUR
275+0.26 EUR
327+0.22 EUR
363+0.2 EUR
525+0.17 EUR
975+0.16 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65U BXP4N65U BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1601 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
247+0.29 EUR
275+0.26 EUR
327+0.22 EUR
363+0.2 EUR
525+0.17 EUR
975+0.16 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N80D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N80F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP5N20D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Gate charge: 9nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP5N20P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP6N60D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60D BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60U BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65CF BXP7N65CF BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
111+0.65 EUR
137+0.52 EUR
163+0.44 EUR
250+0.39 EUR
500+0.35 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65CF BXP7N65CF BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 769 Stücke:
Lieferzeit 7-14 Tag (e)
87+0.83 EUR
111+0.65 EUR
137+0.52 EUR
163+0.44 EUR
250+0.39 EUR
500+0.35 EUR
1000+0.33 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65D BXP7N65D BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2429 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
102+0.7 EUR
126+0.57 EUR
151+0.48 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65D BXP7N65D BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2429 Stücke:
Lieferzeit 7-14 Tag (e)
71+1.02 EUR
102+0.7 EUR
126+0.57 EUR
151+0.48 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65P BXP7N65P BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 689 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
94+0.77 EUR
105+0.68 EUR
125+0.57 EUR
250+0.52 EUR
500+0.46 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65P BXP7N65P BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 689 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.12 EUR
94+0.77 EUR
105+0.68 EUR
125+0.57 EUR
250+0.52 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65U BXP7N65U BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N80F BXP7N80F BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7FA5A62B40D2&compId=BXP7N80.pdf?ci_sign=7c5bcea4c5325f52eb91e75b26644dcccc8f4f44 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 28A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N50D BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE81F1F08300D2&compId=BXP8N50.pdf?ci_sign=f98aa5d24627c912e27ad64f7c9a10ecfaf4f7d9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N50P BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N90F BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E06T60DD-0000 BRIDGELUX Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; TO252
Mounting: SMD
Case: TO252
Kind of package: reel
Collector current: 6A
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E75T65HD-0000 BXPD-E75T65HD-0000 BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E0902638E7E0D6&compId=BXPD-E75T65HD-0000.pdf?ci_sign=296bb3c929deedeffcdda0dd27d6ee8741ec59e5 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 65A; 333W; TO247
Type of transistor: IGBT
Power dissipation: 333W
Case: TO247
Mounting: THT
Gate charge: 327nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 65A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
28+2.63 EUR
31+2.33 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E75T65HD-0000 BXPD-E75T65HD-0000 BRIDGELUX pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E0902638E7E0D6&compId=BXPD-E75T65HD-0000.pdf?ci_sign=296bb3c929deedeffcdda0dd27d6ee8741ec59e5 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 65A; 333W; TO247
Type of transistor: IGBT
Power dissipation: 333W
Case: TO247
Mounting: THT
Gate charge: 327nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 65A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.93 EUR
28+2.63 EUR
31+2.33 EUR
120+2.1 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N65CF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE52C1527DE0D2&compId=BXP10N65C.pdf?ci_sign=4216791ca9da7753a90cedb4c265b4ff5403c768
BXP10N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 32nC
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
117+0.61 EUR
135+0.53 EUR
148+0.49 EUR
250+0.48 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N65CF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE52C1527DE0D2&compId=BXP10N65C.pdf?ci_sign=4216791ca9da7753a90cedb4c265b4ff5403c768
BXP10N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 32nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 701 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
90+0.8 EUR
117+0.61 EUR
135+0.53 EUR
148+0.49 EUR
250+0.48 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N80F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP10N90F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP12N65F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE574E24AC40D2&compId=BXP12N65.pdf?ci_sign=7ee93f96259d83057e67ec78c2ebaca459d28b6c
BXP12N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Pulsed drain current: 48A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
65+1.11 EUR
73+0.99 EUR
100+0.83 EUR
250+0.75 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
BXP12N65F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE574E24AC40D2&compId=BXP12N65.pdf?ci_sign=7ee93f96259d83057e67ec78c2ebaca459d28b6c
BXP12N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Pulsed drain current: 48A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 347 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
52+1.39 EUR
65+1.11 EUR
73+0.99 EUR
100+0.83 EUR
250+0.75 EUR
500+0.66 EUR
1000+0.6 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
BXP13N50F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5AAEF10620D2&compId=BXP13N50.pdf?ci_sign=80f0289890f2193954309ae2ac8df37b7313d44f
BXP13N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
70+1.03 EUR
78+0.92 EUR
100+0.77 EUR
250+0.69 EUR
500+0.61 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BXP13N50F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5AAEF10620D2&compId=BXP13N50.pdf?ci_sign=80f0289890f2193954309ae2ac8df37b7313d44f
BXP13N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 953 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
56+1.29 EUR
70+1.03 EUR
78+0.92 EUR
100+0.77 EUR
250+0.69 EUR
500+0.61 EUR
1000+0.58 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BXP13N50P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP16N65F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5DED9C90C0D2&compId=BXP16N65.pdf?ci_sign=3f2dd72d3cc9b160890d51a3df4ac4ba5a020111
BXP16N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 64A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE61875DDB20D2&compId=BXP18N20.pdf?ci_sign=8c4cdc310516fe000dbb7cfe17b9136ef07c2d6c
BXP18N20F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 11A
Gate-source voltage: ±30V
Power dissipation: 55W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
86+0.84 EUR
96+0.75 EUR
131+0.55 EUR
139+0.52 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20H
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N20P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N50F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE695C4936E0D2&compId=BXP18N50.pdf?ci_sign=02ea48af69631a49103d191b5a7c943710a60986
BXP18N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 881 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
49+1.47 EUR
55+1.31 EUR
100+1.11 EUR
250+1 EUR
500+0.88 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BXP18N50F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE695C4936E0D2&compId=BXP18N50.pdf?ci_sign=02ea48af69631a49103d191b5a7c943710a60986
BXP18N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 881 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.83 EUR
49+1.47 EUR
55+1.31 EUR
100+1.11 EUR
250+1 EUR
500+0.88 EUR
1000+0.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BXP20N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP20N50H
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N20L pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE6C9DC7B100D2&compId=BXP2N20L.pdf?ci_sign=2bc7871620dc1fe11b3350c518952bc3ba1dc075
BXP2N20L
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 185V
Drain current: 1.2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: SOT23-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
550+0.13 EUR
610+0.12 EUR
725+0.099 EUR
863+0.083 EUR
926+0.077 EUR
1000+0.076 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N20L pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE6C9DC7B100D2&compId=BXP2N20L.pdf?ci_sign=2bc7871620dc1fe11b3350c518952bc3ba1dc075
BXP2N20L
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 185V
Drain current: 1.2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: SOT23-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2274 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
550+0.13 EUR
610+0.12 EUR
725+0.099 EUR
863+0.083 EUR
926+0.077 EUR
1000+0.076 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65D pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE716468AD80D2&compId=BXP2N65.pdf?ci_sign=6cbd6c9803d57b74b61c2b32c453835bb7299010
BXP2N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
365+0.2 EUR
410+0.17 EUR
486+0.15 EUR
538+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65D pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE716468AD80D2&compId=BXP2N65.pdf?ci_sign=6cbd6c9803d57b74b61c2b32c453835bb7299010
BXP2N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1628 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
295+0.24 EUR
365+0.2 EUR
410+0.17 EUR
486+0.15 EUR
538+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65N
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65U pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE716468AD80D2&compId=BXP2N65.pdf?ci_sign=6cbd6c9803d57b74b61c2b32c453835bb7299010
BXP2N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
334+0.21 EUR
374+0.19 EUR
443+0.16 EUR
491+0.15 EUR
556+0.13 EUR
975+0.12 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BXP2N65U pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE716468AD80D2&compId=BXP2N65.pdf?ci_sign=6cbd6c9803d57b74b61c2b32c453835bb7299010
BXP2N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1495 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
278+0.26 EUR
334+0.21 EUR
374+0.19 EUR
443+0.16 EUR
491+0.15 EUR
556+0.13 EUR
975+0.12 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N1KF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7556B47F40D2&compId=BXP3N1K.pdf?ci_sign=738fa789b68c7f6001f34af0687d8fe147cc0c16
BXP3N1KF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
89+0.81 EUR
111+0.65 EUR
174+0.41 EUR
184+0.39 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N1KF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7556B47F40D2&compId=BXP3N1K.pdf?ci_sign=738fa789b68c7f6001f34af0687d8fe147cc0c16
BXP3N1KF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 795 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
77+0.93 EUR
89+0.81 EUR
111+0.65 EUR
174+0.41 EUR
184+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BXP3N50D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N60D
BXP4N60D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
169+0.42 EUR
190+0.38 EUR
226+0.32 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N60D
BXP4N60D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1281 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
136+0.53 EUR
169+0.42 EUR
190+0.38 EUR
226+0.32 EUR
250+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65D pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2
BXP4N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
229+0.31 EUR
257+0.28 EUR
305+0.23 EUR
338+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65D pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2
BXP4N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1945 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
186+0.39 EUR
229+0.31 EUR
257+0.28 EUR
305+0.23 EUR
338+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2
BXP4N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1661 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
218+0.33 EUR
244+0.29 EUR
291+0.25 EUR
323+0.22 EUR
480+0.2 EUR
960+0.19 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2
BXP4N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1661 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
173+0.41 EUR
218+0.33 EUR
244+0.29 EUR
291+0.25 EUR
323+0.22 EUR
480+0.2 EUR
960+0.19 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65U pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2
BXP4N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1601 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
247+0.29 EUR
275+0.26 EUR
327+0.22 EUR
363+0.2 EUR
525+0.17 EUR
975+0.16 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N65U pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE78BBCAA640D2&compId=BXP4N65.pdf?ci_sign=bca81f280c6c373166a3d0564ebf20543beb77b2
BXP4N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1601 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
193+0.37 EUR
247+0.29 EUR
275+0.26 EUR
327+0.22 EUR
363+0.2 EUR
525+0.17 EUR
975+0.16 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N80D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP4N80F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP5N20D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Gate charge: 9nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP5N20P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP6N60D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N60U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65CF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846
BXP7N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
111+0.65 EUR
137+0.52 EUR
163+0.44 EUR
250+0.39 EUR
500+0.35 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65CF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846
BXP7N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 769 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
87+0.83 EUR
111+0.65 EUR
137+0.52 EUR
163+0.44 EUR
250+0.39 EUR
500+0.35 EUR
1000+0.33 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65D pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846
BXP7N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
102+0.7 EUR
126+0.57 EUR
151+0.48 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65D pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846
BXP7N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2429 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
71+1.02 EUR
102+0.7 EUR
126+0.57 EUR
151+0.48 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65P pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846
BXP7N65P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 689 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
94+0.77 EUR
105+0.68 EUR
125+0.57 EUR
250+0.52 EUR
500+0.46 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65P pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846
BXP7N65P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 689 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
65+1.12 EUR
94+0.77 EUR
105+0.68 EUR
125+0.57 EUR
250+0.52 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N65U pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7BE2EC8580D2&compId=BXP7N65.pdf?ci_sign=61e4d534adddd9cf1a31c189e552bd288826b846
BXP7N65U
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP7N80F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7FA5A62B40D2&compId=BXP7N80.pdf?ci_sign=7c5bcea4c5325f52eb91e75b26644dcccc8f4f44
BXP7N80F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 28A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N50D pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE81F1F08300D2&compId=BXP8N50.pdf?ci_sign=f98aa5d24627c912e27ad64f7c9a10ecfaf4f7d9
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N50P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXP8N90F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E06T60DD-0000
Hersteller: BRIDGELUX
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; TO252
Mounting: SMD
Case: TO252
Kind of package: reel
Collector current: 6A
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E75T65HD-0000 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E0902638E7E0D6&compId=BXPD-E75T65HD-0000.pdf?ci_sign=296bb3c929deedeffcdda0dd27d6ee8741ec59e5
BXPD-E75T65HD-0000
Hersteller: BRIDGELUX
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 65A; 333W; TO247
Type of transistor: IGBT
Power dissipation: 333W
Case: TO247
Mounting: THT
Gate charge: 327nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 65A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
28+2.63 EUR
31+2.33 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BXPD-E75T65HD-0000 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E0902638E7E0D6&compId=BXPD-E75T65HD-0000.pdf?ci_sign=296bb3c929deedeffcdda0dd27d6ee8741ec59e5
BXPD-E75T65HD-0000
Hersteller: BRIDGELUX
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 65A; 333W; TO247
Type of transistor: IGBT
Power dissipation: 333W
Case: TO247
Mounting: THT
Gate charge: 327nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 65A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.93 EUR
28+2.63 EUR
31+2.33 EUR
120+2.1 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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