Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BXP10N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 44W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 71nC Pulsed drain current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP10N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 44W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 71nC Pulsed drain current: 40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP10N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP10N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BXP12N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 39nC Pulsed drain current: 48A |
auf Bestellung 439 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP12N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 39nC Pulsed drain current: 48A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 439 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP13N50F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Pulsed drain current: 52A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 953 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP13N50F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Pulsed drain current: 52A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 953 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP13N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 52A Power dissipation: 158W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP13N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 52A Power dissipation: 158W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BXP16N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Pulsed drain current: 64A Power dissipation: 43W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BXP16N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Pulsed drain current: 64A Power dissipation: 43W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BXP18N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP18N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BXP18N20F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F Case: TO220F Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP18N20F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F Case: TO220F Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 302 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP18N20H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Mounting: THT Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP18N20H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Mounting: THT Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP18N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220 Case: TO220 Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP18N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220 Case: TO220 Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BXP18N50F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BXP18N50F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BXP20N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 39W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP20N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 39W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP20N50H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP20N50H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP2N20L | BRIDGELUX | BXP2N20L SMD N channel transistors |
auf Bestellung 2435 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP2N65A | BRIDGELUX | BXP2N65A THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BXP2N65D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Power dissipation: 44W Case: TO252 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8.5nC Pulsed drain current: 8A |
auf Bestellung 1688 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP2N65D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Power dissipation: 44W Case: TO252 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8.5nC Pulsed drain current: 8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1688 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP2N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Case: TO220F Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP2N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Case: TO220F Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP2N65N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 3W Case: SOT223-3L Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP2N65N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 3W Case: SOT223-3L Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BXP2N65U | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Power dissipation: 44W Case: TO251 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 8.5nC Pulsed drain current: 8A |
auf Bestellung 1555 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP2N65U | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Power dissipation: 44W Case: TO251 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 8.5nC Pulsed drain current: 8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1555 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP3N1K2D | BRIDGELUX | BXP3N1K2D SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP3N1KD | BRIDGELUX | BXP3N1KD SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP3N1KF | BRIDGELUX | BXP3N1KF THT N channel transistors |
auf Bestellung 807 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP3N50D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Power dissipation: 50W Gate charge: 9nC Pulsed drain current: 12A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP3N50D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Power dissipation: 50W Gate charge: 9nC Pulsed drain current: 12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BXP4N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1306 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP4N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1306 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP4N65D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP4N65D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10000 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP4N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 37W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1783 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP4N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 37W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1783 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP4N65U | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1707 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP4N65U | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1707 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP4N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Case: TO220F Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP4N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Case: TO220F Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP5N20D | BRIDGELUX | BXP5N20D SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP5N20P | BRIDGELUX | BXP5N20P THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP6N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 24A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP6N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 24A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP7N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP7N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BXP7N60F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 28A Power dissipation: 45W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BXP10N80F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP10N80F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP10N90F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP10N90F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP12N65F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
auf Bestellung 439 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
60+ | 1.20 EUR |
67+ | 1.07 EUR |
109+ | 0.66 EUR |
115+ | 0.62 EUR |
BXP12N65F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 439 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
60+ | 1.20 EUR |
67+ | 1.07 EUR |
109+ | 0.66 EUR |
115+ | 0.62 EUR |
BXP13N50F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.39 EUR |
65+ | 1.12 EUR |
72+ | 1.00 EUR |
112+ | 0.64 EUR |
119+ | 0.60 EUR |
BXP13N50F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 953 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.39 EUR |
65+ | 1.12 EUR |
72+ | 1.00 EUR |
112+ | 0.64 EUR |
119+ | 0.60 EUR |
BXP13N50P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP13N50P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP16N65F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP16N65F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1000 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP18N20D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP18N20D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP18N20F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.10 EUR |
82+ | 0.87 EUR |
92+ | 0.78 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
BXP18N20F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 302 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.10 EUR |
82+ | 0.87 EUR |
92+ | 0.78 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
1000+ | 0.50 EUR |
BXP18N20H |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP18N20H |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP18N20P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP18N20P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP18N50F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP18N50F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP20N50F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 80A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP20N50F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP20N50H |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP20N50H |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP2N20L |
Hersteller: BRIDGELUX
BXP2N20L SMD N channel transistors
BXP2N20L SMD N channel transistors
auf Bestellung 2435 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
807+ | 0.09 EUR |
848+ | 0.08 EUR |
BXP2N65A |
Hersteller: BRIDGELUX
BXP2N65A THT N channel transistors
BXP2N65A THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP2N65D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
auf Bestellung 1688 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
336+ | 0.21 EUR |
376+ | 0.19 EUR |
447+ | 0.16 EUR |
610+ | 0.12 EUR |
650+ | 0.11 EUR |
BXP2N65D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1688 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
336+ | 0.21 EUR |
376+ | 0.19 EUR |
447+ | 0.16 EUR |
610+ | 0.12 EUR |
650+ | 0.11 EUR |
BXP2N65F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP2N65F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP2N65N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP2N65N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP2N65U |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
auf Bestellung 1555 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
329+ | 0.22 EUR |
368+ | 0.19 EUR |
439+ | 0.16 EUR |
527+ | 0.14 EUR |
556+ | 0.13 EUR |
975+ | 0.12 EUR |
BXP2N65U |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 8.5nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1555 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
329+ | 0.22 EUR |
368+ | 0.19 EUR |
439+ | 0.16 EUR |
527+ | 0.14 EUR |
556+ | 0.13 EUR |
975+ | 0.12 EUR |
BXP3N1K2D |
Hersteller: BRIDGELUX
BXP3N1K2D SMD N channel transistors
BXP3N1K2D SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP3N1KD |
Hersteller: BRIDGELUX
BXP3N1KD SMD N channel transistors
BXP3N1KD SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP3N1KF |
Hersteller: BRIDGELUX
BXP3N1KF THT N channel transistors
BXP3N1KF THT N channel transistors
auf Bestellung 807 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.28 EUR |
164+ | 0.44 EUR |
174+ | 0.41 EUR |
BXP3N50D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP3N50D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP4N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1306 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
157+ | 0.46 EUR |
176+ | 0.41 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
BXP4N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1306 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
157+ | 0.46 EUR |
176+ | 0.41 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
BXP4N65D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
211+ | 0.34 EUR |
236+ | 0.30 EUR |
407+ | 0.18 EUR |
432+ | 0.17 EUR |
BXP4N65D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
211+ | 0.34 EUR |
236+ | 0.30 EUR |
407+ | 0.18 EUR |
432+ | 0.17 EUR |
BXP4N65F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1783 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
200+ | 0.36 EUR |
225+ | 0.32 EUR |
345+ | 0.21 EUR |
365+ | 0.20 EUR |
1000+ | 0.19 EUR |
BXP4N65F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1783 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
200+ | 0.36 EUR |
225+ | 0.32 EUR |
345+ | 0.21 EUR |
365+ | 0.20 EUR |
1000+ | 0.19 EUR |
BXP4N65U |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1707 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
262+ | 0.27 EUR |
293+ | 0.24 EUR |
350+ | 0.20 EUR |
451+ | 0.16 EUR |
477+ | 0.15 EUR |
BXP4N65U |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1707 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
262+ | 0.27 EUR |
293+ | 0.24 EUR |
350+ | 0.20 EUR |
451+ | 0.16 EUR |
477+ | 0.15 EUR |
BXP4N80D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP4N80D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP4N80F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP4N80F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP5N20D |
Hersteller: BRIDGELUX
BXP5N20D SMD N channel transistors
BXP5N20D SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP5N20P |
Hersteller: BRIDGELUX
BXP5N20P THT N channel transistors
BXP5N20P THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP6N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP6N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP7N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP7N60D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXP7N60F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH