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CGD65A055S2-T07 CGD65A055S2-T07 Cambridge GaN Devices CGD65A055S2.pdf Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A055S2-T07 CGD65A055S2-T07 Cambridge GaN Devices CGD65A055S2.pdf Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
auf Bestellung 646 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.01 EUR
10+17.71 EUR
100+16.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A055SH2 CGD65A055SH2 Cambridge GaN Devices product-CGD65A055SH2 Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A055SH2 CGD65A055SH2 Cambridge GaN Devices product-CGD65A055SH2 Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
auf Bestellung 3090 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.01 EUR
10+13.25 EUR
100+11.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A130S2-T13 CGD65A130S2-T13 Cambridge GaN Devices Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A130S2-T13 CGD65A130S2-T13 Cambridge GaN Devices Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
auf Bestellung 3306 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.58 EUR
10+7.87 EUR
100+6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A130SH2 CGD65A130SH2 Cambridge GaN Devices CGD65A130SH2.pdf Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A130SH2 CGD65A130SH2 Cambridge GaN Devices CGD65A130SH2.pdf Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
auf Bestellung 3423 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.69 EUR
10+7.92 EUR
100+6.01 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B130S2-T13 CGD65B130S2-T13 Cambridge GaN Devices CGD65B130S2.pdf Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B130S2-T13 CGD65B130S2-T13 Cambridge GaN Devices CGD65B130S2.pdf Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
auf Bestellung 4851 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.91 EUR
10+7.38 EUR
100+5.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B130SH2 CGD65B130SH2 Cambridge GaN Devices product-CGD65B130SH2 Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B130SH2 CGD65B130SH2 Cambridge GaN Devices product-CGD65B130SH2 Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
auf Bestellung 4953 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.98 EUR
10+7.42 EUR
100+5.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B200S2-T13 CGD65B200S2-T13 Cambridge GaN Devices CGD65B200S2.pdf Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
auf Bestellung 4139 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.43 EUR
10+5.63 EUR
100+4.04 EUR
500+3.92 EUR
Mindestbestellmenge: 3
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CGD65B200S2-T13 CGD65B200S2-T13 Cambridge GaN Devices CGD65B200S2.pdf Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B240SH2 CGD65B240SH2 Cambridge GaN Devices product-CGD65B240SH2 Description: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
Produkt ist nicht verfügbar
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CGD65B240SH2 CGD65B240SH2 Cambridge GaN Devices product-CGD65B240SH2 Description: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
auf Bestellung 4715 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.41 EUR
10+5.15 EUR
100+3.81 EUR
500+3.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CGD65C025SP2 CGD65C025SP2 Cambridge GaN Devices CGD_65_C025_SP_2_BHDFN_preliminary_datasheet_eeee687740.pdf Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1489 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.7 EUR
10+27.7 EUR
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CGD65C025SP2 CGD65C025SP2 Cambridge GaN Devices CGD_65_C025_SP_2_BHDFN_preliminary_datasheet_eeee687740.pdf Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A055S2-T07 CGD65A055S2.pdf
CGD65A055S2-T07
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A055S2-T07 CGD65A055S2.pdf
CGD65A055S2-T07
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
auf Bestellung 646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.01 EUR
10+17.71 EUR
100+16.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A055SH2 product-CGD65A055SH2
CGD65A055SH2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A055SH2 product-CGD65A055SH2
CGD65A055SH2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
auf Bestellung 3090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.01 EUR
10+13.25 EUR
100+11.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A130S2-T13
CGD65A130S2-T13
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Produkt ist nicht verfügbar
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CGD65A130S2-T13
CGD65A130S2-T13
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
auf Bestellung 3306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.58 EUR
10+7.87 EUR
100+6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A130SH2 CGD65A130SH2.pdf
CGD65A130SH2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65A130SH2 CGD65A130SH2.pdf
CGD65A130SH2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
auf Bestellung 3423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.69 EUR
10+7.92 EUR
100+6.01 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B130S2-T13 CGD65B130S2.pdf
CGD65B130S2-T13
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B130S2-T13 CGD65B130S2.pdf
CGD65B130S2-T13
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
auf Bestellung 4851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.91 EUR
10+7.38 EUR
100+5.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B130SH2 product-CGD65B130SH2
CGD65B130SH2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B130SH2 product-CGD65B130SH2
CGD65B130SH2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
auf Bestellung 4953 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.98 EUR
10+7.42 EUR
100+5.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B200S2-T13 CGD65B200S2.pdf
CGD65B200S2-T13
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
auf Bestellung 4139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.43 EUR
10+5.63 EUR
100+4.04 EUR
500+3.92 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B200S2-T13 CGD65B200S2.pdf
CGD65B200S2-T13
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
Produkt ist nicht verfügbar
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CGD65B240SH2 product-CGD65B240SH2
CGD65B240SH2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CGD65B240SH2 product-CGD65B240SH2
CGD65B240SH2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
auf Bestellung 4715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.41 EUR
10+5.15 EUR
100+3.81 EUR
500+3.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CGD65C025SP2 CGD_65_C025_SP_2_BHDFN_preliminary_datasheet_eeee687740.pdf
CGD65C025SP2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.7 EUR
10+27.7 EUR
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CGD65C025SP2 CGD_65_C025_SP_2_BHDFN_preliminary_datasheet_eeee687740.pdf
CGD65C025SP2
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH