Produkte > CENTRAL SEMICONDUCTOR CORP > Alle Produkte des Herstellers CENTRAL SEMICONDUCTOR CORP (7892) > Seite 132 nach 132
| Foto | Bezeichnung | Hersteller | Beschreibung |
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1N3600 TR TIN/LEAD | Central Semiconductor Corp |
 Description: TH DIODE-SWITCHING SINGLEPackaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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CMXD3004SR TR PBFREE | Central Semiconductor Corp |
Description: 200MA 375V SMD DIODE-SWITCHING D Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-26 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 350 V |
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BCY59-IX TIN/LEAD | Central Semiconductor Corp |
Description: 45V 100MA 340MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
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BCY59-VIII TIN/LEAD | Central Semiconductor Corp |
Description: 45V 100MA 340MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
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BCY59-X TIN/LEAD | Central Semiconductor Corp |
Description: 45V 100MA 340MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
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BCY59-VII TIN/LEAD | Central Semiconductor Corp |
Description: 45V 100MA 340MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
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BCY59 PBFREE | Central Semiconductor Corp |
Description: 45V 100MA 340MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) Frequency - Transition: 150MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
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BCY59 TIN/LEAD | Central Semiconductor Corp |
Description: 45V 100MA 340MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) Frequency - Transition: 150MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
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2N4952 TIN/LEAD | Central Semiconductor Corp |
Description: 30V 1A 625MW TH TRANSISTOR-SMALL Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA Current - Collector Cutoff (Max): 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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2N5059 PBFREE | Central Semiconductor Corp |
Description: 250V 150MA 1W TH TRANSISTOR-SMAL Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V Frequency - Transition: 160MHz Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 5 W |
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2N5059 TIN/LEAD | Central Semiconductor Corp |
Description: 250V 150MA 1W TH TRANSISTOR-SMAL Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V Frequency - Transition: 160MHz Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 5 W |
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TIP3055 | Central Semiconductor Corp |
Description: TRANS NPN 100V 15A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 90 W |
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P6SMB22A BK PBFREE | Central Semiconductor Corp |
Description: 600W 18.8V SMD TRANSIENT VOLTAGE Packaging: Box Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20A Voltage - Reverse Standoff (Typ): 18.8V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.9V Power - Peak Pulse: 600W Power Line Protection: No |
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TIP142 | Central Semiconductor Corp |
Description: TRANS NPN 100V 10A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W |
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TIP2955 | Central Semiconductor Corp |
Description: TRANS PNP 100V 15A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 90 W |
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1N747A TR PBFREE | Central Semiconductor Corp |
Description: 3.6V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
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1N747A BK PBFREE | Central Semiconductor Corp |
Description: 3.6V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
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1N5231B BK TIN/LEAD | Central Semiconductor Corp |
Description: 5.1V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
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CUD10-04 TR13 | Central Semiconductor Corp |
Description: DIODE STANDARD 400V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 62pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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CMPZDA4V3 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER ARRAY 4.3V SOT-23 Tolerance: ±6.98% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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P6SMB250A TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 214V SMD TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.7A Voltage - Reverse Standoff (Typ): 214V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 237.5V Power - Peak Pulse: 600W Power Line Protection: No |
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| PN3638A APP PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
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| PN3638A TRC PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Voltage - Collector Emitter Breakdown (Max): 25 V |
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PN3638A PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 25 V |
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PN3638A APM PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 25 V |
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PN3638A TRE PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 25 V |
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| PN3638A APP TIN/LEAD | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
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| PN3638A TRC TIN/LEAD | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Voltage - Collector Emitter Breakdown (Max): 25 V |
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PN3638A TIN/LEAD | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 25 V |
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P6SMB33CA TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 28.2V SMD TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.2A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 600W Power Line Protection: No |
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| CMDSH-3 TR | Central Semiconductor Corp | DIODE SCHOTTKY 30V 100MA SOD323 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| CMDSH05-4 | Central Semiconductor Corp | SOD323 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N3600 TR TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TH DIODE-SWITCHING SINGLE
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: TH DIODE-SWITCHING SINGLE
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| CMXD3004SR TR PBFREE |
Hersteller: Central Semiconductor Corp
Description: 200MA 375V SMD DIODE-SWITCHING D
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 350 V
Description: 200MA 375V SMD DIODE-SWITCHING D
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 350 V
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| BCY59-IX TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| BCY59-VIII TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| BCY59-X TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| BCY59-VII TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| BCY59 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| BCY59 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| 2N4952 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 1A 625MW TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 30V 1A 625MW TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| 2N5059 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
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| 2N5059 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
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| TIP3055 |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
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| P6SMB22A BK PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 600W 18.8V SMD TRANSIENT VOLTAGE
Packaging: Box
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 18.8V SMD TRANSIENT VOLTAGE
Packaging: Box
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Power - Peak Pulse: 600W
Power Line Protection: No
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| TIP142 |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
Description: TRANS NPN 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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| TIP2955 |
|
Hersteller: Central Semiconductor Corp
Description: TRANS PNP 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
Description: TRANS PNP 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
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| 1N747A TR PBFREE |
Hersteller: Central Semiconductor Corp
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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| 1N747A BK PBFREE |
Hersteller: Central Semiconductor Corp
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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Stück im Wert von UAH
| 1N5231B BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 5.1V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: 5.1V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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| CUD10-04 TR13 |
|
Hersteller: Central Semiconductor Corp
Description: DIODE STANDARD 400V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| CMPZDA4V3 TR PBFREE |
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER ARRAY 4.3V SOT-23
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER ARRAY 4.3V SOT-23
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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Stück im Wert von UAH
| P6SMB250A TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 600W 214V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 214V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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| PN3638A APP PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A TRC PBFREE |
Hersteller: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A PBFREE |
Hersteller: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A APM PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A APP TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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Stück im Wert von UAH
| PN3638A TRC TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PN3638A TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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| P6SMB33CA TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 600W 28.2V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 28.2V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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| CMDSH-3 TR |
Hersteller: Central Semiconductor Corp
DIODE SCHOTTKY 30V 100MA SOD323
DIODE SCHOTTKY 30V 100MA SOD323
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| CMDSH05-4 |
Hersteller: Central Semiconductor Corp
SOD323
SOD323
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH