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Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
CS218-55B	Central Semiconductor Corp	Description: DIODE RECT 55A 200V TO-218	Produkt ist nicht verfügbar
CS218-55D	Central Semiconductor Corp	Description: DIODE RECT 55A 400V TO-218	Produkt ist nicht verfügbar
CS218-55M	Central Semiconductor Corp	Description: DIODE RECT 55A 600V TO-218	Produkt ist nicht verfügbar
CS218-55N	Central Semiconductor Corp	Description: DIODE RECT 55A 800V TO-218	Produkt ist nicht verfügbar
CS218-55P	Central Semiconductor Corp	Description: DIODE RECT 55A 1000V TO-218	Produkt ist nicht verfügbar
CS218-55PB	Central Semiconductor Corp	Description: DIODE RECT 55A 1200V TO-218	Produkt ist nicht verfügbar
CS218I-30B	Central Semiconductor Corp	Description: DIODE RECT 30A 200V TO-218	Produkt ist nicht verfügbar
CS218I-30D	Central Semiconductor Corp	Description: DIODE RECT 30A 400V TO-218	Produkt ist nicht verfügbar
CS218I-30M	Central Semiconductor Corp	Description: DIODE RECT 30A 600V TO-218	Produkt ist nicht verfügbar
CS218I-30N	Central Semiconductor Corp	Description: DIODE RECT 30A 800V TO-218	Produkt ist nicht verfügbar
CS218I-30P	Central Semiconductor Corp	Description: DIODE RECT 30A 1000V TO-218	Produkt ist nicht verfügbar
CS218I-30PB	Central Semiconductor Corp	Description: DIODE RECT 30A 1200V TO-218	Produkt ist nicht verfügbar
CS218I-50B	Central Semiconductor Corp	Description: DIODE RECT 50A 200V TO-218	Produkt ist nicht verfügbar
CS218I-50D	Central Semiconductor Corp	Description: DIODE RECT 50A 400V TO-218	Produkt ist nicht verfügbar
CS218I-50M	Central Semiconductor Corp	Description: DIODE RECT 50A 600V TO-218	Produkt ist nicht verfügbar
CS218I-50N	Central Semiconductor Corp	Description: DIODE RECT 50A 800V TO-218	Produkt ist nicht verfügbar
CS218I-50P	Central Semiconductor Corp	Description: DIODE RECT 50A 1000V TO-218	Produkt ist nicht verfügbar
CS218I-50PB	Central Semiconductor Corp	Description: DIODE RECT 50A 1200V TO-218	Produkt ist nicht verfügbar
TIP35C SL	Central Semiconductor Corp	Description: TRANS NPN 100V 25A TO218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W	Produkt ist nicht verfügbar
TIP36	Central Semiconductor Corp	Description: TRANS PNP 40V 25A TO218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 125 W	Produkt ist nicht verfügbar
TIP36B SL	Central Semiconductor Corp	Description: TRANS PNP 80V 25A TO218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 125 W	Produkt ist nicht verfügbar
TIP36C SL	Central Semiconductor Corp	Description: TRANS PNP 100V 25A TO218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W	Produkt ist nicht verfügbar
BDW84C	Central Semiconductor Corp	Description: TRANS PNP 100V 15A TO218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V Supplier Device Package: TO-218 Part Status: Obsolete Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 130 W	Produkt ist nicht verfügbar
CS48-35B	Central Semiconductor Corp	Description: SCR 200V 35A TO48	Produkt ist nicht verfügbar
CS48-35D	Central Semiconductor Corp	Description: SCR 400V 35A TO48	Produkt ist nicht verfügbar
CS48-35N	Central Semiconductor Corp	Description: SCR PHASE CONTROL TO48	Produkt ist nicht verfügbar
2N685A	Central Semiconductor Corp	Description: SCR 200V 25A TO48	Produkt ist nicht verfügbar
CMUT5401E TR	Central Semiconductor Corp	Description: TRANS PNP 220V 0.6A SOT523 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-523 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 220 V Power - Max: 250 mW	Produkt ist nicht verfügbar
CMUT5551E TR	Central Semiconductor Corp	Description: TRANS NPN 220V 0.6A SOT523 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-523 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 220 V Power - Max: 250 mW	Produkt ist nicht verfügbar
CXT5551E TR	Central Semiconductor Corp	Description: TRANS PNP	Produkt ist nicht verfügbar
CZT5551E TR	Central Semiconductor Corp	Description: TRANS NPN 220V 0.6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 220 V Power - Max: 2 W	Produkt ist nicht verfügbar
CMUT5401E BK	Central Semiconductor Corp	Description: TRANS PNP 220V 0.6A SOT523 Packaging: Bulk Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-523 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 220 V Power - Max: 250 mW	Produkt ist nicht verfügbar
CMUT5551E BK	Central Semiconductor Corp	Description: TRANS NPN 220V 0.6A SOT523 Packaging: Bulk Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-523 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 220 V Power - Max: 250 mW	Produkt ist nicht verfügbar
CXT5551E BK	Central Semiconductor Corp	Description: TRANS PNP	Produkt ist nicht verfügbar
CZT5551E BK	Central Semiconductor Corp	Description: TRANS NPN 220V 0.6A SOT223 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 220 V Power - Max: 2 W	Produkt ist nicht verfügbar
CBR6-010	Central Semiconductor Corp	Description: BRIDGE RECT 1PHASE 100V 6A CM Packaging: Bulk Package / Case: 4-Square, CM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: CM Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V	Produkt ist nicht verfügbar
CBR6-100	Central Semiconductor Corp	Description: BRIDGE RECT 1PHASE 1KV 6A CM Packaging: Bulk Package / Case: 4-Square, CM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: CM Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V	Produkt ist nicht verfügbar
CN4157 TR	Central Semiconductor Corp	Description: DIODE MULTI CHIP DO-35	Produkt ist nicht verfügbar
CN4157 BK	Central Semiconductor Corp	Description: DIODE MULTI CHIP DO-35	Produkt ist nicht verfügbar
CN5179 BK	Central Semiconductor Corp	Description: DIODE MULTI CHIP DO-35	Produkt ist nicht verfügbar
CDM2206-800LR SL PBFREE	Central Semiconductor Corp	Description: MOSFET N-CH 800V 6A TO220	auf Bestellung 839 Stücke: Lieferzeit 10-14 Tag (e)
1N4007 TR	Central Semiconductor Corp	Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V	Produkt ist nicht verfügbar
1N4007 BK	Central Semiconductor Corp	Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V	Produkt ist nicht verfügbar
CPD65-BAV45-CT	Central Semiconductor Corp	Description: DIODE GEN PURP 20V 50MA DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 600 ns Technology: Standard Capacitance @ Vr, F: 1.3pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 pA @ 5 V	Produkt ist nicht verfügbar
1N4004GPP BK	Central Semiconductor Corp	Description: DIODE GEN PURP 400V 1A DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V	Produkt ist nicht verfügbar
1N4005GPP BK	Central Semiconductor Corp	Description: DIODE GEN PURP 600V 1A DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V	Produkt ist nicht verfügbar
1N4007GPP BK	Central Semiconductor Corp	Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V	Produkt ist nicht verfügbar
1N4003GL TR	Central Semiconductor Corp	Description: DIODE GEN PURP 200V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V	Produkt ist nicht verfügbar
1N4004GPP TR	Central Semiconductor Corp	Description: DIODE GEN PURP 400V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V	Produkt ist nicht verfügbar
1N4005GPP TR	Central Semiconductor Corp	Description: DIODE GEN PURP 600V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V	Produkt ist nicht verfügbar
1N4007GPP TR	Central Semiconductor Corp	Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V	Produkt ist nicht verfügbar
H11C4M	Central Semiconductor Corp	Description: OPTOISOLATOR 5KV SCR 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: SCR Mounting Type: Through Hole Operating Temperature: -30°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Voltage - Isolation: 5000Vrms Current - Hold (Ih): 500µA Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 20mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 150 mA Voltage - Off State: 400 V Current - DC Forward (If) (Max): 50 mA	Produkt ist nicht verfügbar
2N5192 SL H	Central Semiconductor Corp	Description: TRANS NPN 80V 4A TO126 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-126 Part Status: Last Time Buy Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W	Produkt ist nicht verfügbar
2N5195 SL H	Central Semiconductor Corp	Description: TRANS PNP 80V 4A TO126 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W	Produkt ist nicht verfügbar
2N5190	Central Semiconductor Corp	Description: TRANS NPN 40V 4A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 40 W	Produkt ist nicht verfügbar
2N5192R	Central Semiconductor Corp	Description: TRANS NPN 80V 4A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W	Produkt ist nicht verfügbar
1N4001G BK	Central Semiconductor Corp	Description: DIODE GEN PURPOSE DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Supplier Device Package: DO-41	Produkt ist nicht verfügbar
1N4003G BK	Central Semiconductor Corp	Description: DIODE GEN PURPOSE DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Supplier Device Package: DO-41	Produkt ist nicht verfügbar
1N4004G BK	Central Semiconductor Corp	Description: DIODE GEN PURP 400V 1A DO41	Produkt ist nicht verfügbar
TIP47 SL	Central Semiconductor Corp	Description: TRANS NPN 250V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 40 W	Produkt ist nicht verfügbar

CS218-55B

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 55A 200V TO-218

Produkt ist nicht verfügbar

CS218-55D

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 55A 400V TO-218

Produkt ist nicht verfügbar

CS218-55M

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 55A 600V TO-218

Produkt ist nicht verfügbar

CS218-55N

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 55A 800V TO-218

Produkt ist nicht verfügbar

CS218-55P

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 55A 1000V TO-218

Produkt ist nicht verfügbar

CS218-55PB

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 55A 1200V TO-218

Produkt ist nicht verfügbar

CS218I-30B

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 30A 200V TO-218

Produkt ist nicht verfügbar

CS218I-30D

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 30A 400V TO-218

Produkt ist nicht verfügbar

CS218I-30M

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 30A 600V TO-218

Produkt ist nicht verfügbar

CS218I-30N

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 30A 800V TO-218

Produkt ist nicht verfügbar

CS218I-30P

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 30A 1000V TO-218

Produkt ist nicht verfügbar

CS218I-30PB

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 30A 1200V TO-218

Produkt ist nicht verfügbar

CS218I-50B

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 50A 200V TO-218

Produkt ist nicht verfügbar

CS218I-50D

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 50A 400V TO-218

Produkt ist nicht verfügbar

CS218I-50M

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 50A 600V TO-218

Produkt ist nicht verfügbar

CS218I-50N

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 50A 800V TO-218

Produkt ist nicht verfügbar

CS218I-50P

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 50A 1000V TO-218

Produkt ist nicht verfügbar

CS218I-50PB

Hersteller: Central Semiconductor Corp
Description: DIODE RECT 50A 1200V TO-218

Produkt ist nicht verfügbar

TIP35C SL

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 100V 25A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W

Produkt ist nicht verfügbar

TIP36

Hersteller: Central Semiconductor Corp
Description: TRANS PNP 40V 25A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 125 W

Produkt ist nicht verfügbar

TIP36B SL

Hersteller: Central Semiconductor Corp
Description: TRANS PNP 80V 25A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W

Produkt ist nicht verfügbar

TIP36C SL

Hersteller: Central Semiconductor Corp
Description: TRANS PNP 100V 25A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W

Produkt ist nicht verfügbar

BDW84C

Hersteller: Central Semiconductor Corp
Description: TRANS PNP 100V 15A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 130 W

Produkt ist nicht verfügbar

CS48-35B

Hersteller: Central Semiconductor Corp
Description: SCR 200V 35A TO48

Produkt ist nicht verfügbar

CS48-35D

Hersteller: Central Semiconductor Corp
Description: SCR 400V 35A TO48

Produkt ist nicht verfügbar

CS48-35N

Hersteller: Central Semiconductor Corp
Description: SCR PHASE CONTROL TO48

Produkt ist nicht verfügbar

2N685A

Hersteller: Central Semiconductor Corp
Description: SCR 200V 25A TO48

Produkt ist nicht verfügbar

CMUT5401E TR

Hersteller: Central Semiconductor Corp
Description: TRANS PNP 220V 0.6A SOT523
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW

Produkt ist nicht verfügbar

CMUT5551E TR

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 220V 0.6A SOT523
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW

Produkt ist nicht verfügbar

CXT5551E TR

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Hersteller: Central Semiconductor Corp
Description: TRANS PNP

Produkt ist nicht verfügbar

CZT5551E TR

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 220V 0.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 2 W

Produkt ist nicht verfügbar

CMUT5401E BK

Hersteller: Central Semiconductor Corp
Description: TRANS PNP 220V 0.6A SOT523
Packaging: Bulk
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW

Produkt ist nicht verfügbar

CMUT5551E BK

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 220V 0.6A SOT523
Packaging: Bulk
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW

Produkt ist nicht verfügbar

CXT5551E BK

Hersteller: Central Semiconductor Corp
Description: TRANS PNP

Produkt ist nicht verfügbar

CZT5551E BK

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 220V 0.6A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 2 W

Produkt ist nicht verfügbar

CBR6-010

Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 100V 6A CM
Packaging: Bulk
Package / Case: 4-Square, CM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: CM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V

Produkt ist nicht verfügbar

CBR6-100

Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 1KV 6A CM
Packaging: Bulk
Package / Case: 4-Square, CM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: CM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V

Produkt ist nicht verfügbar

CN4157 TR

Hersteller: Central Semiconductor Corp
Description: DIODE MULTI CHIP DO-35

Produkt ist nicht verfügbar

CN4157 BK

Hersteller: Central Semiconductor Corp
Description: DIODE MULTI CHIP DO-35

Produkt ist nicht verfügbar

CN5179 BK

Hersteller: Central Semiconductor Corp
Description: DIODE MULTI CHIP DO-35

Produkt ist nicht verfügbar

CDM2206-800LR SL PBFREE

Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 800V 6A TO220

auf Bestellung 839 Stücke:

Lieferzeit 10-14 Tag (e)

1N4007 TR

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

Produkt ist nicht verfügbar

1N4007 BK

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

Produkt ist nicht verfügbar

CPD65-BAV45-CT

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 20V 50MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 1.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 pA @ 5 V

Produkt ist nicht verfügbar

1N4004GPP BK

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V

Produkt ist nicht verfügbar

1N4005GPP BK

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Produkt ist nicht verfügbar

1N4007GPP BK

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

Produkt ist nicht verfügbar

1N4003GL TR

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V

Produkt ist nicht verfügbar

1N4004GPP TR

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V

Produkt ist nicht verfügbar

1N4005GPP TR

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Produkt ist nicht verfügbar

1N4007GPP TR

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

Produkt ist nicht verfügbar

H11C4M

Hersteller: Central Semiconductor Corp
Description: OPTOISOLATOR 5KV SCR 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: SCR
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Voltage - Isolation: 5000Vrms
Current - Hold (Ih): 500µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 20mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA

Produkt ist nicht verfügbar

2N5192 SL H

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 80V 4A TO126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W

Produkt ist nicht verfügbar

2N5195 SL H

Hersteller: Central Semiconductor Corp
Description: TRANS PNP 80V 4A TO126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W

Produkt ist nicht verfügbar

2N5190

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W

Produkt ist nicht verfügbar

2N5192R

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W

Produkt ist nicht verfügbar

1N4001G BK

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURPOSE DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41

Produkt ist nicht verfügbar

1N4003G BK

Produkt ist nicht verfügbar

1N4004G BK

Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 400V 1A DO41

Produkt ist nicht verfügbar

TIP47 SL

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 250V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W

Produkt ist nicht verfügbar

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