Produkte > CENTRAL SEMICONDUCTOR CORP > Alle Produkte des Herstellers CENTRAL SEMICONDUCTOR CORP (6708) > Seite 66 nach 112
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| P4SMA5.0A TR13 | Central Semiconductor Corp |
 Description: TVS DIODE 5VWM 9.2VC SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| CP304X-MPSA06-CT | Central Semiconductor Corp |
Description: TRANS NPN 80V 0.5A DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: Die Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V |
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| CP304V-MPSA06-CT | Central Semiconductor Corp |
Description: TRANS NPN 80V 0.5A DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V |
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| CZ5334B BK | Central Semiconductor Corp |
Description: DIODE ZENER 3.6V 5W DO201 Tolerance: ±5% Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: DO-201 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 1 V |
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| CZ5335B BK | Central Semiconductor Corp |
Description: DIODE ZENER DO-201 |
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| CZ5336B BK | Central Semiconductor Corp |
Description: DIODE ZENER DO-201 |
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| CZ5337B BK | Central Semiconductor Corp |
Description: DIODE ZENER DO-201 |
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| CZ5335B TR | Central Semiconductor Corp |
Description: DIODE ZENER DO-201 |
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| CZ5336B TR | Central Semiconductor Corp |
Description: DIODE ZENER DO-201 |
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| CZ5337B TR | Central Semiconductor Corp |
Description: DIODE ZENER DO-201 |
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| CZ5337C TR | Central Semiconductor Corp |
Description: DIODE ZENER DO-201 |
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| CZ5337D TR | Central Semiconductor Corp |
Description: DIODE ZENER DO-201 |
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| CBR35-100PW | Central Semiconductor Corp |
Description: BRIDGE RECT 1P 1KV 35A 4CASE FPW Packaging: Box Package / Case: 4-Square, FPW Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-Case FPW Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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| CBR2-100 | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 1KV 2A A CASE Packaging: Box Package / Case: 4-Circular, A Case Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: A Case Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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| CTLDM7120-M621H BK | Central Semiconductor Corp |
Description: MOSFET N-CH 20V DFN6 |
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| CTLDM8002A-M621 BK | Central Semiconductor Corp |
Description: MOSFET P-CH 50V 280MA TLM621 |
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| CTLDM8002A-M621 TR | Central Semiconductor Corp |
Description: MOSFET P-CH 50V 280MA TLM621 |
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| CTLDM8002A-M621H BK | Central Semiconductor Corp |
Description: MOSFET P-CH 50V 280MA TLM621H |
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| CTLDM8002A-M621H TR | Central Semiconductor Corp |
Description: MOSFET P-CH 50V 280MA TLM621H |
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| CTLSH1-40M621H BK | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 40V 1A TLM621H Packaging: Bulk Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TLM621H Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
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| CTLSH1-40M621H TR | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 40V 1A TLM621H Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TLM621H Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
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| CTLSH1-40M322S BK | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 40V 1A TLM322 Packaging: Tube Package / Case: 3-TDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TLM322 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
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| CTLSH1-40M322S TR | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 40V 1A TLM322 Packaging: Tape & Reel (TR) Package / Case: 3-TDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TLM322 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
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| CTLT8099-M322S TR | Central Semiconductor Corp |
Description: TRANS NPN 80V 0.5A TLM322 Packaging: Tape & Reel (TR) Package / Case: 3-TDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TLM322 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.45 W |
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| CP302-MPSH10-WN | Central Semiconductor Corp |
Description: RF TRANS NPNUHF/VHF Packaging: Box Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Frequency - Transition: 650MHz Supplier Device Package: Die Part Status: Obsolete |
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| CP302-MPSH10-CT | Central Semiconductor Corp |
Description: RF TRANS NPNUHF/VHF Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Frequency - Transition: 650MHz Supplier Device Package: Die Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| CP302-MPSH10-CT20 | Central Semiconductor Corp |
Description: RF TRANS NPNUHF/VHF Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Frequency - Transition: 650MHz Supplier Device Package: Die Part Status: Obsolete |
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| CMPFJ310 BK | Central Semiconductor Corp |
Description: JFET N-CH 25V SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V |
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| CMPFJ310 TR | Central Semiconductor Corp |
Description: JFET N-CH 25V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V |
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1N4762A BK | Central Semiconductor Corp |
Description: DIODE ZENER 82V 1W DO41 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-41 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V |
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1N4762A TR | Central Semiconductor Corp |
Description: DIODE ZENER 82V 1W DO41 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-41 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V |
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1N4763A BK | Central Semiconductor Corp |
Description: DIODE ZENER 91V 1W DO41 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 91 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V |
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1N4763A TR | Central Semiconductor Corp |
Description: DIODE ZENER 91V 1W DO41 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 91 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V |
Produkt ist nicht verfügbar |
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1N4764 BK | Central Semiconductor Corp |
Description: DIODE ZENER 100V 1W DO41 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: DO-41 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 76 V |
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1N4764 TR | Central Semiconductor Corp |
Description: DIODE ZENER 100V 1W DO41 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: DO-41 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200 Voltage Coupled to Current - Reverse Leakage @ Vr: 76 Current - Reverse Leakage @ Vr: 5 µA @ 76 V |
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1N4764A BK | Central Semiconductor Corp |
Description: DIODE ZENER 100V 1W DO41 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: DO-41 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 76 V |
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1N4764A TR | Central Semiconductor Corp |
Description: DIODE ZENER 100V 1W DO41 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: DO-41 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 76 V |
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2N5039 | Central Semiconductor Corp |
Description: TRANS NPN 75V 20A TO3 Packaging: Tray Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A Current - Collector Cutoff (Max): 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-3 Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 140 W |
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| CR2-160 BK | Central Semiconductor Corp |
Description: DIODE GEN PURP 1.6KV 2A DO15 Packaging: Box Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
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| CR2-160 TR | Central Semiconductor Corp |
Description: DIODE GEN PURP 1.6KV 2A DO15 Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
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| CPD93V-1N3600-CT | Central Semiconductor Corp |
Description: DIODE GEN PURP 50V 200MA DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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| CPD93V-1N3600-WN | Central Semiconductor Corp |
Description: DIODE GEN PURP 50V 200MA DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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| CPD93V-1N4150-CT | Central Semiconductor Corp |
Description: DIODE GEN PURP 50V 200MA DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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| CPD93V-1N4150-WN | Central Semiconductor Corp |
Description: DIODE GEN PURP 50V 200MA DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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| CP373-CMPDM303-CT20 | Central Semiconductor Corp |
Description: MOSFET TRANSISTOR N-CH CHIP Packaging: Bulk Part Status: Obsolete |
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| CP373-CMPDM303NH-CT | Central Semiconductor Corp |
Description: MOSFET N-CH 30V 3.6A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V |
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| CP373-CMPDM303NH-WN | Central Semiconductor Corp |
Description: MOSFET N-CH 30V 3.6A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V |
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| CP373-CTLDM303N-CT | Central Semiconductor Corp |
Description: MOSFET N-CH 30V 3.6A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V |
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| CP373-CTLDM303N-WN | Central Semiconductor Corp |
Description: MOSFET N-CH 30V 3.6A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V |
Produkt ist nicht verfügbar |
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| 2N5109UB BK | Central Semiconductor Corp |
Description: RF TRANS NPN 20V 1.2GHZ TO39 Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 11dB Power - Max: 1W Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3.5dB @ 200MHz Supplier Device Package: UB Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2N3866 TIN/LEAD | Central Semiconductor Corp |
Description: RF TRANS NPN 30V 500MHZ TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 10dB Power - Max: 5W Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Frequency - Transition: 500MHz Supplier Device Package: TO-39 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| CP229-2N5109-CM | Central Semiconductor Corp |
Description: RF TRANSISTOR TO-39 Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 11dB Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Supplier Device Package: Die Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| CP229-2N5109-WN | Central Semiconductor Corp |
Description: RF TRANSISTOR TO-39 Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 11dB Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Supplier Device Package: Die Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2N3866A TIN/LEAD | Central Semiconductor Corp |
Description: RF TRANS NPN 30V 400MHZ TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 10dB Power - Max: 5W Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Frequency - Transition: 800MHz Supplier Device Package: TO-39 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2N3866A PBFREE | Central Semiconductor Corp |
Description: RF TRANS NPN 30V 400MHZ TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 10dB Power - Max: 5W Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Frequency - Transition: 800MHz Supplier Device Package: TO-39 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| CP229-2N5109-CT20 | Central Semiconductor Corp |
Description: RF TRANSISTOR TO-39 Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 11dB Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Supplier Device Package: Die Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| CP223-2N3866-WN | Central Semiconductor Corp |
Description: RF TRANSISTOR TO-39 Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Gain: 10dB Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Frequency - Transition: 500MHz Supplier Device Package: Die Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| CP223-2N3866-CT | Central Semiconductor Corp |
Description: RF TRANSISTOR TO-39 Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Gain: 10dB Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Frequency - Transition: 500MHz Supplier Device Package: Die Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| CP229-2N5109-CT | Central Semiconductor Corp |
Description: RF TRANSISTOR TO-39 Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 11dB Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Supplier Device Package: Die Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2N3866 TRAY | Central Semiconductor Corp |
Description: RF TRANS NPN 30V 500MHZ TO39 Packaging: Tray Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 10dB Power - Max: 5W Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Frequency - Transition: 500MHz Supplier Device Package: TO-39 Part Status: Obsolete |
Produkt ist nicht verfügbar |
| P4SMA5.0A TR13 |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 5VWM 9.2VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 9.2VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP304X-MPSA06-CT |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 80V 0.5A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: TRANS NPN 80V 0.5A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Produkt ist nicht verfügbar
| CP304V-MPSA06-CT |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 80V 0.5A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: TRANS NPN 80V 0.5A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Produkt ist nicht verfügbar
| CZ5334B BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 3.6V 5W DO201
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Description: DIODE ZENER 3.6V 5W DO201
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Produkt ist nicht verfügbar
| CZ5335B BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER DO-201
Description: DIODE ZENER DO-201
Produkt ist nicht verfügbar
| CZ5336B BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER DO-201
Description: DIODE ZENER DO-201
Produkt ist nicht verfügbar
| CZ5337B BK |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER DO-201
Description: DIODE ZENER DO-201
Produkt ist nicht verfügbar
| CZ5335B TR |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER DO-201
Description: DIODE ZENER DO-201
Produkt ist nicht verfügbar
| CZ5336B TR |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER DO-201
Description: DIODE ZENER DO-201
Produkt ist nicht verfügbar
| CZ5337B TR |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER DO-201
Description: DIODE ZENER DO-201
Produkt ist nicht verfügbar
| CZ5337C TR |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER DO-201
Description: DIODE ZENER DO-201
Produkt ist nicht verfügbar
| CZ5337D TR |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER DO-201
Description: DIODE ZENER DO-201
Produkt ist nicht verfügbar
| CBR35-100PW |
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Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1P 1KV 35A 4CASE FPW
Packaging: Box
Package / Case: 4-Square, FPW
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-Case FPW
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 35A 4CASE FPW
Packaging: Box
Package / Case: 4-Square, FPW
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-Case FPW
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
| CBR2-100 |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 1KV 2A A CASE
Packaging: Box
Package / Case: 4-Circular, A Case
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: A Case
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A A CASE
Packaging: Box
Package / Case: 4-Circular, A Case
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: A Case
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
| CTLDM7120-M621H BK |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V DFN6
Description: MOSFET N-CH 20V DFN6
Produkt ist nicht verfügbar
| CTLDM8002A-M621 BK |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 50V 280MA TLM621
Description: MOSFET P-CH 50V 280MA TLM621
Produkt ist nicht verfügbar
| CTLDM8002A-M621 TR |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 50V 280MA TLM621
Description: MOSFET P-CH 50V 280MA TLM621
Produkt ist nicht verfügbar
| CTLDM8002A-M621H BK |
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Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 50V 280MA TLM621H
Description: MOSFET P-CH 50V 280MA TLM621H
Produkt ist nicht verfügbar
| CTLDM8002A-M621H TR |
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Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 50V 280MA TLM621H
Description: MOSFET P-CH 50V 280MA TLM621H
Produkt ist nicht verfügbar
| CTLSH1-40M621H BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 1A TLM621H
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM621H
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A TLM621H
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM621H
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
| CTLSH1-40M621H TR |
|
Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 1A TLM621H
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM621H
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A TLM621H
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM621H
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
| CTLSH1-40M322S BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 1A TLM322
Packaging: Tube
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM322
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A TLM322
Packaging: Tube
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM322
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
| CTLSH1-40M322S TR |
|
Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 1A TLM322
Packaging: Tape & Reel (TR)
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM322
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A TLM322
Packaging: Tape & Reel (TR)
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM322
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
| CTLT8099-M322S TR |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 80V 0.5A TLM322
Packaging: Tape & Reel (TR)
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TLM322
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.45 W
Description: TRANS NPN 80V 0.5A TLM322
Packaging: Tape & Reel (TR)
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TLM322
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.45 W
Produkt ist nicht verfügbar
| CP302-MPSH10-WN |
|
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPNUHF/VHF
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANS NPNUHF/VHF
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP302-MPSH10-CT |
|
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPNUHF/VHF
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANS NPNUHF/VHF
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP302-MPSH10-CT20 |
|
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPNUHF/VHF
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANS NPNUHF/VHF
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| CMPFJ310 BK |
|
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 25V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Description: JFET N-CH 25V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Produkt ist nicht verfügbar
| CMPFJ310 TR |
|
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Produkt ist nicht verfügbar
| 1N4762A BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 82V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Description: DIODE ZENER 82V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Produkt ist nicht verfügbar
| 1N4762A TR |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 82V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Description: DIODE ZENER 82V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Produkt ist nicht verfügbar
| 1N4763A BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 91V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Description: DIODE ZENER 91V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Produkt ist nicht verfügbar
| 1N4763A TR |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 91V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Description: DIODE ZENER 91V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Produkt ist nicht verfügbar
| 1N4764 BK |
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Produkt ist nicht verfügbar
| 1N4764 TR |
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 76
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 76
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Produkt ist nicht verfügbar
| 1N4764A BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Produkt ist nicht verfügbar
| 1N4764A TR |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Produkt ist nicht verfügbar
| 2N5039 |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 75V 20A TO3
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
Description: TRANS NPN 75V 20A TO3
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
Produkt ist nicht verfügbar
| CR2-160 BK |
|
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 1.6KV 2A DO15
Packaging: Box
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 2A DO15
Packaging: Box
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
| CR2-160 TR |
|
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 1.6KV 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
| CPD93V-1N3600-CT |
|
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
| CPD93V-1N3600-WN |
|
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
| CPD93V-1N4150-CT |
|
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
| CPD93V-1N4150-WN |
|
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
| CP373-CMPDM303-CT20 |
Hersteller: Central Semiconductor Corp
Description: MOSFET TRANSISTOR N-CH CHIP
Packaging: Bulk
Part Status: Obsolete
Description: MOSFET TRANSISTOR N-CH CHIP
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP373-CMPDM303NH-CT |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
| CP373-CMPDM303NH-WN |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
| CP373-CTLDM303N-CT |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
| CP373-CTLDM303N-WN |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
| 2N5109UB BK |
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 20V 1.2GHZ TO39
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Power - Max: 1W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3.5dB @ 200MHz
Supplier Device Package: UB
Part Status: Obsolete
Description: RF TRANS NPN 20V 1.2GHZ TO39
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Power - Max: 1W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3.5dB @ 200MHz
Supplier Device Package: UB
Part Status: Obsolete
Produkt ist nicht verfügbar
| 2N3866 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 30V 500MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Description: RF TRANS NPN 30V 500MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP229-2N5109-CM |
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP229-2N5109-WN |
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| 2N3866A TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 30V 400MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 800MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Description: RF TRANS NPN 30V 400MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 800MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
| 2N3866A PBFREE |
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 30V 400MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 800MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Description: RF TRANS NPN 30V 400MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 800MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP229-2N5109-CT20 |
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP223-2N3866-WN |
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 10dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 10dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP223-2N3866-CT |
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 10dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 10dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| CP229-2N5109-CT |
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
| 2N3866 TRAY |
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 30V 500MHZ TO39
Packaging: Tray
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Description: RF TRANS NPN 30V 500MHZ TO39
Packaging: Tray
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar