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CTLDM8002A-M621 BK Central Semiconductor Corp CTLDM8002A-M621_DS.pdf Description: MOSFET P-CH 50V 280MA TLM621
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CTLDM8002A-M621 TR Central Semiconductor Corp CTLDM8002A-M621_DS.pdf Description: MOSFET P-CH 50V 280MA TLM621
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CTLDM8002A-M621H BK Central Semiconductor Corp CTLDM8002A-M621H_DS.pdf Description: MOSFET P-CH 50V 280MA TLM621H
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CTLDM8002A-M621H TR Central Semiconductor Corp CTLDM8002A-M621H_DS.pdf Description: MOSFET P-CH 50V 280MA TLM621H
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CTLSH1-40M621H BK Central Semiconductor Corp CTLSH1-40M621H_DS.pdf Description: DIODE SCHOTTKY 40V 1A TLM621H
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM621H
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CTLSH1-40M621H TR Central Semiconductor Corp CTLSH1-40M621H_DS.pdf Description: DIODE SCHOTTKY 40V 1A TLM621H
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM621H
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CTLSH1-40M322S BK Central Semiconductor Corp CTLSH1-40M322S_DS.pdf Description: DIODE SCHOTTKY 40V 1A TLM322
Packaging: Tube
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM322
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CTLSH1-40M322S TR Central Semiconductor Corp CTLSH1-40M322S_DS.pdf Description: DIODE SCHOTTKY 40V 1A TLM322
Packaging: Tape & Reel (TR)
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM322
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CTLT8099-M322S TR Central Semiconductor Corp CTLSH1-40M322S_DS.pdf Description: TRANS NPN 80V 0.5A TLM322
Packaging: Tape & Reel (TR)
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TLM322
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.45 W
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CP302-MPSH10-WN Central Semiconductor Corp CP302-MPSH10_R2_Apr3%2C2017_DS.pdf Description: RF TRANS NPN 25V 650MHZ DIE
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
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CP302-MPSH10-CT Central Semiconductor Corp CP302-MPSH10_R2_Apr3%2C2017_DS.pdf Description: RF TRANS NPN 25V 650MHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
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CP302-MPSH10-CT20 Central Semiconductor Corp CP302-MPSH10_R2_Apr3%2C2017_DS.pdf Description: RF TRANS NPN 25V 650MHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
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CMPFJ310 BK CMPFJ310 BK Central Semiconductor Corp CMPFJ310.pdf Description: JFET N-CH 25V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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CMPFJ310 TR CMPFJ310 TR Central Semiconductor Corp CMPFJ310.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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1N4762A BK 1N4762A BK Central Semiconductor Corp 1N4728A-1N4764A_DS.pdf Description: DIODE ZENER 82V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
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1N4762A TR 1N4762A TR Central Semiconductor Corp 1N4728A-1N4764A_DS.pdf Description: DIODE ZENER 82V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
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1N4763A BK 1N4763A BK Central Semiconductor Corp 1N4728A-1N4764A_DS.pdf Description: DIODE ZENER 91V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
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1N4763A TR 1N4763A TR Central Semiconductor Corp 1N4728A-1N4764A_DS.pdf Description: DIODE ZENER 91V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
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1N4764 BK 1N4764 BK Central Semiconductor Corp Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
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1N4764 TR 1N4764 TR Central Semiconductor Corp Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 76
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
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1N4764A BK 1N4764A BK Central Semiconductor Corp 1N4728A-1N4764A_DS.pdf Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
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1N4764A TR 1N4764A TR Central Semiconductor Corp 1N4728A-1N4764A_DS.pdf Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
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2N5039 2N5039 Central Semiconductor Corp 2N5038_2N5039.pdf Description: TRANS NPN 75V 20A TO3
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
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CR2-160 BK CR2-160 BK Central Semiconductor Corp CR2-160.pdf Description: DIODE STANDARD 1600V 2A DO15
Packaging: Box
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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CR2-160 TR CR2-160 TR Central Semiconductor Corp CR2-160.pdf Description: DIODE STANDARD 1600V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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CPD93V-1N3600-CT Central Semiconductor Corp CPD93V-1N3600_DS.pdf Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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CPD93V-1N3600-WN Central Semiconductor Corp CPD93V-1N3600_DS.pdf Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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CPD93V-1N4150-CT Central Semiconductor Corp CPD93V-1N4150_DS.pdf Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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CPD93V-1N4150-WN Central Semiconductor Corp CPD93V-1N4150_DS.pdf Description: DIODE STANDARD 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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CP373-CMPDM303-CT20 Central Semiconductor Corp Description: MOSFET TRANSISTOR N-CH CHIP
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP373-CMPDM303NH-CT Central Semiconductor Corp CP373-CMPDM303NH_wpd.pdf Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
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CP373-CMPDM303NH-WN Central Semiconductor Corp CP373-CMPDM303NH_wpd.pdf Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
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CP373-CTLDM303N-CT Central Semiconductor Corp CP373_DS.pdf Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
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CP373-CTLDM303N-WN Central Semiconductor Corp CP373_DS.pdf Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
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2N5109UB BK Central Semiconductor Corp Description: RF TRANS NPN 20V 1.2GHZ TO39
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Power - Max: 1W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3.5dB @ 200MHz
Supplier Device Package: UB
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N3866 TIN/LEAD 2N3866 TIN/LEAD Central Semiconductor Corp Description: RF TRANS NPN 30V 500MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP229-2N5109-CM Central Semiconductor Corp Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP229-2N5109-WN Central Semiconductor Corp Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N3866A TIN/LEAD 2N3866A TIN/LEAD Central Semiconductor Corp Description: RF TRANS NPN 30V 400MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 800MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N3866A PBFREE 2N3866A PBFREE Central Semiconductor Corp Description: RF TRANS NPN 30V 800MHZ TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 800MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP229-2N5109-CT20 Central Semiconductor Corp Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP223-2N3866-WN Central Semiconductor Corp Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 10dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP223-2N3866-CT Central Semiconductor Corp Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 10dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP229-2N5109-CT Central Semiconductor Corp Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N3866 TRAY 2N3866 TRAY Central Semiconductor Corp Description: RF TRANS NPN 30V 500MHZ TO39
Packaging: Tray
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP232V-CEN1308-CT Central Semiconductor Corp Description: TRANS JFET N-CH AMP
Produkt ist nicht verfügbar
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CP210-2N5486-CT Central Semiconductor Corp Description: JFET N-CH
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP232V-2N4416A-CT CP232V-2N4416A-CT Central Semiconductor Corp CP232V-2N4416A.pdf Description: JFET N-CH 35V 5MA SOT23
Packaging: Tray
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 5 mA
Supplier Device Package: SOT-23
Part Status: Active
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Produkt ist nicht verfügbar
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CP210-2N4416A-WN Central Semiconductor Corp Description: JFET N-CH 35V 15MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 15 mA
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Produkt ist nicht verfügbar
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CP232V-2N4416A-WN CP232V-2N4416A-WN Central Semiconductor Corp Description: JFET N-CH 35V 5MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 5 mA
Supplier Device Package: SOT-23
Part Status: Active
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Produkt ist nicht verfügbar
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CP232V-2N4416A-CT20 CP232V-2N4416A-CT20 Central Semiconductor Corp Description: JFET N-CH 35V 5MA SOT23
Packaging: Tray
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 5 mA
Supplier Device Package: SOT-23
Part Status: Active
Drain to Source Voltage (Vdss): 35 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Produkt ist nicht verfügbar
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CP210-2N4416A-CT20 Central Semiconductor Corp Description: JFET N-CH 35V 15MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 15 mA
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Produkt ist nicht verfügbar
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CP210-2N4416A-CT Central Semiconductor Corp CP210-2N4416A_DS.pdf Description: JFET N-CH 35V 15MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 15 mA
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Produkt ist nicht verfügbar
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CP210-CEN1308-CT Central Semiconductor Corp Description: TRANS JFET N-CH AMP
Produkt ist nicht verfügbar
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CP232V-2N5486-CT Central Semiconductor Corp Description: JFET N-CH
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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CP206-2N4856-CT Central Semiconductor Corp cp206-2n4856_wpd.pdf Description: JFET N-CH SWITCH CHOPPER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP216-2N4856-CM Central Semiconductor Corp Description: JFET N-CH 40V 50MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
Produkt ist nicht verfügbar
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CP216-2N4392-CT Central Semiconductor Corp CP216-2N4392_WPD.PDF Description: JFET N-CH SWITCH CHOPPER
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CP206-2N4392-CM Central Semiconductor Corp cp206-2n4392_wpd.pdf Description: JFET N-CH SWITCH CHOPPER
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CP216-2N4392-CM Central Semiconductor Corp CP216-2N4392_WPD.PDF Description: JFET N-CH 40V 50MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
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CTLDM8002A-M621 BK CTLDM8002A-M621_DS.pdf
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 50V 280MA TLM621
Produkt ist nicht verfügbar
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CTLDM8002A-M621 TR CTLDM8002A-M621_DS.pdf
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 50V 280MA TLM621
Produkt ist nicht verfügbar
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CTLDM8002A-M621H BK CTLDM8002A-M621H_DS.pdf
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 50V 280MA TLM621H
Produkt ist nicht verfügbar
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CTLDM8002A-M621H TR CTLDM8002A-M621H_DS.pdf
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 50V 280MA TLM621H
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CTLSH1-40M621H BK CTLSH1-40M621H_DS.pdf
Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 1A TLM621H
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM621H
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CTLSH1-40M621H TR CTLSH1-40M621H_DS.pdf
Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 1A TLM621H
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM621H
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
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CTLSH1-40M322S BK CTLSH1-40M322S_DS.pdf
Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 1A TLM322
Packaging: Tube
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM322
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CTLSH1-40M322S TR CTLSH1-40M322S_DS.pdf
Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 1A TLM322
Packaging: Tape & Reel (TR)
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TLM322
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CTLT8099-M322S TR CTLSH1-40M322S_DS.pdf
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 80V 0.5A TLM322
Packaging: Tape & Reel (TR)
Package / Case: 3-TDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TLM322
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.45 W
Produkt ist nicht verfügbar
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CP302-MPSH10-WN CP302-MPSH10_R2_Apr3%2C2017_DS.pdf
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 25V 650MHZ DIE
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP302-MPSH10-CT CP302-MPSH10_R2_Apr3%2C2017_DS.pdf
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 25V 650MHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP302-MPSH10-CT20 CP302-MPSH10_R2_Apr3%2C2017_DS.pdf
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 25V 650MHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CMPFJ310 BK CMPFJ310.pdf
CMPFJ310 BK
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 25V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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CMPFJ310 TR CMPFJ310.pdf
CMPFJ310 TR
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Produkt ist nicht verfügbar
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1N4762A BK 1N4728A-1N4764A_DS.pdf
1N4762A BK
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 82V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Produkt ist nicht verfügbar
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1N4762A TR 1N4728A-1N4764A_DS.pdf
1N4762A TR
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 82V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Produkt ist nicht verfügbar
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1N4763A BK 1N4728A-1N4764A_DS.pdf
1N4763A BK
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 91V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Produkt ist nicht verfügbar
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1N4763A TR 1N4728A-1N4764A_DS.pdf
1N4763A TR
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 91V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Produkt ist nicht verfügbar
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1N4764 BK
1N4764 BK
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Produkt ist nicht verfügbar
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1N4764 TR
1N4764 TR
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 76
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Produkt ist nicht verfügbar
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1N4764A BK 1N4728A-1N4764A_DS.pdf
1N4764A BK
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Produkt ist nicht verfügbar
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1N4764A TR 1N4728A-1N4764A_DS.pdf
1N4764A TR
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 100V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Produkt ist nicht verfügbar
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2N5039 2N5038_2N5039.pdf
2N5039
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 75V 20A TO3
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
Produkt ist nicht verfügbar
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CR2-160 BK CR2-160.pdf
CR2-160 BK
Hersteller: Central Semiconductor Corp
Description: DIODE STANDARD 1600V 2A DO15
Packaging: Box
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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CR2-160 TR CR2-160.pdf
CR2-160 TR
Hersteller: Central Semiconductor Corp
Description: DIODE STANDARD 1600V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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CPD93V-1N3600-CT CPD93V-1N3600_DS.pdf
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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CPD93V-1N3600-WN CPD93V-1N3600_DS.pdf
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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CPD93V-1N4150-CT CPD93V-1N4150_DS.pdf
Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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CPD93V-1N4150-WN CPD93V-1N4150_DS.pdf
Hersteller: Central Semiconductor Corp
Description: DIODE STANDARD 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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CP373-CMPDM303-CT20
Hersteller: Central Semiconductor Corp
Description: MOSFET TRANSISTOR N-CH CHIP
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP373-CMPDM303NH-CT CP373-CMPDM303NH_wpd.pdf
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
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CP373-CMPDM303NH-WN CP373-CMPDM303NH_wpd.pdf
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
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CP373-CTLDM303N-CT CP373_DS.pdf
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
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CP373-CTLDM303N-WN CP373_DS.pdf
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Produkt ist nicht verfügbar
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2N5109UB BK
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 20V 1.2GHZ TO39
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Power - Max: 1W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3.5dB @ 200MHz
Supplier Device Package: UB
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N3866 TIN/LEAD
2N3866 TIN/LEAD
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 30V 500MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP229-2N5109-CM
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP229-2N5109-WN
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N3866A TIN/LEAD
2N3866A TIN/LEAD
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 30V 400MHZ TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 800MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N3866A PBFREE
2N3866A PBFREE
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 30V 800MHZ TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 800MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP229-2N5109-CT20
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP223-2N3866-WN
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 10dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP223-2N3866-CT
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 10dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP229-2N5109-CT
Hersteller: Central Semiconductor Corp
Description: RF TRANSISTOR TO-39
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 11dB
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N3866 TRAY
2N3866 TRAY
Hersteller: Central Semiconductor Corp
Description: RF TRANS NPN 30V 500MHZ TO39
Packaging: Tray
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 10dB
Power - Max: 5W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Frequency - Transition: 500MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP232V-CEN1308-CT
Hersteller: Central Semiconductor Corp
Description: TRANS JFET N-CH AMP
Produkt ist nicht verfügbar
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CP210-2N5486-CT
Hersteller: Central Semiconductor Corp
Description: JFET N-CH
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP232V-2N4416A-CT CP232V-2N4416A.pdf
CP232V-2N4416A-CT
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 35V 5MA SOT23
Packaging: Tray
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 5 mA
Supplier Device Package: SOT-23
Part Status: Active
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Produkt ist nicht verfügbar
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CP210-2N4416A-WN
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 35V 15MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 15 mA
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Produkt ist nicht verfügbar
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CP232V-2N4416A-WN
CP232V-2N4416A-WN
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 35V 5MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 5 mA
Supplier Device Package: SOT-23
Part Status: Active
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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CP232V-2N4416A-CT20
CP232V-2N4416A-CT20
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 35V 5MA SOT23
Packaging: Tray
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 5 mA
Supplier Device Package: SOT-23
Part Status: Active
Drain to Source Voltage (Vdss): 35 V
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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CP210-2N4416A-CT20
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 35V 15MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 15 mA
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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CP210-2N4416A-CT CP210-2N4416A_DS.pdf
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 35V 15MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Current Drain (Id) - Max: 15 mA
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 35 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Produkt ist nicht verfügbar
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CP210-CEN1308-CT
Hersteller: Central Semiconductor Corp
Description: TRANS JFET N-CH AMP
Produkt ist nicht verfügbar
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CP232V-2N5486-CT
Hersteller: Central Semiconductor Corp
Description: JFET N-CH
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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CP206-2N4856-CT cp206-2n4856_wpd.pdf
Hersteller: Central Semiconductor Corp
Description: JFET N-CH SWITCH CHOPPER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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CP216-2N4856-CM
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 40V 50MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
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CP216-2N4392-CT CP216-2N4392_WPD.PDF
Hersteller: Central Semiconductor Corp
Description: JFET N-CH SWITCH CHOPPER
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CP206-2N4392-CM cp206-2n4392_wpd.pdf
Hersteller: Central Semiconductor Corp
Description: JFET N-CH SWITCH CHOPPER
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CP216-2N4392-CM CP216-2N4392_WPD.PDF
Hersteller: Central Semiconductor Corp
Description: JFET N-CH 40V 50MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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