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74LVC2G17FW4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Operating temperature: -40...150°C
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74LVC2G17FX4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Operating temperature: -40...150°C
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74LVC2G17FZ4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74LVC2G17W6-7 74LVC2G17W6-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT26; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT26
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Quiescent current: 40µA
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: LVC
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 2600 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
146+0.49 EUR
186+0.39 EUR
397+0.18 EUR
650+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 99
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74LVC1G11DW-7 74LVC1G11DW-7 DIODES INCORPORATED 74LVC1G11.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of inputs: 3
Kind of output: push-pull
auf Bestellung 3000 Stücke:
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239+0.30 EUR
391+0.18 EUR
524+0.14 EUR
596+0.12 EUR
711+0.10 EUR
1413+0.05 EUR
1493+0.05 EUR
Mindestbestellmenge: 239
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74LVC1G08SE-7 74LVC1G08SE-7 DIODES INCORPORATED 74LVC1G08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Family: LVC
Kind of output: push-pull
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
272+0.26 EUR
332+0.22 EUR
525+0.14 EUR
633+0.11 EUR
967+0.07 EUR
Mindestbestellmenge: 186
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DMN2025UFDF-7 DIODES INCORPORATED DMN2025UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 12.3nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 30A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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BZT52C15-7-F BZT52C15-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5898 Stücke:
Lieferzeit 14-21 Tag (e)
583+0.12 EUR
834+0.09 EUR
1017+0.07 EUR
1437+0.05 EUR
2294+0.03 EUR
3356+0.02 EUR
3547+0.02 EUR
Mindestbestellmenge: 583
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BZT52C15S-7-F BZT52C15S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 3590 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
556+0.13 EUR
1117+0.06 EUR
2778+0.03 EUR
2942+0.02 EUR
Mindestbestellmenge: 385
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BZT52C15SQ-7-F BZT52C15SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 920 Stücke:
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599+0.12 EUR
834+0.09 EUR
920+0.08 EUR
Mindestbestellmenge: 599
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AP3211KTR-G1 AP3211KTR-G1 DIODES INCORPORATED AP3211x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷18VDC; Uout: 0.81÷15VDC; 1.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...18V DC
Output voltage: 0.81...15V DC
Output current: 1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 92%
auf Bestellung 360 Stücke:
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109+0.66 EUR
143+0.50 EUR
295+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 109
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PAM8407DR DIODES INCORPORATED PAM8407.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SOP16; 2.5÷6VDC
Type of integrated circuit: audio amplifier
Output power: 3W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: SOP16
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...6V DC
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PAM8408DR DIODES INCORPORATED PAM8408.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SO16L; 2.5÷6VDC
Type of integrated circuit: audio amplifier
Output power: 3W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: SO16L
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...6V DC
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AS7805AT-E1 AS7805AT-E1 DIODES INCORPORATED AS78XXA.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA
Mounting: THT
Kind of package: tube
Case: TO220-3
Output voltage: 5V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 7.5...20V
Manufacturer series: AS78XXA
Kind of voltage regulator: fixed; linear
Operating temperature: -40...125°C
Tolerance: ±4%
auf Bestellung 1104 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
171+0.42 EUR
196+0.37 EUR
325+0.22 EUR
345+0.21 EUR
Mindestbestellmenge: 105
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DF10M DF10M DIODES INCORPORATED DF005_10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Case: DFM
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
168+0.43 EUR
194+0.37 EUR
282+0.26 EUR
Mindestbestellmenge: 88
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AP22966DC8-7 AP22966DC8-7 DIODES INCORPORATED AP22966.pdf Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 6A; Ch: 2; N-Channel; SMD; reel,tape
Case: VDFN3020-14
Supply voltage: 0.8...5.5V DC
On-state resistance: 18mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: load switch
Mounting: SMD
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APX803L40-16SA-7 APX803L40-16SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Kind of package: reel; tape
Delay time: 450ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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BZT52C5V1-13-F BZT52C5V1-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3567 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
705+0.10 EUR
1334+0.05 EUR
1993+0.04 EUR
3031+0.02 EUR
3206+0.02 EUR
Mindestbestellmenge: 500
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BZT52C5V1-7-F BZT52C5V1-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3070 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
736+0.10 EUR
893+0.08 EUR
1539+0.05 EUR
3070+0.02 EUR
Mindestbestellmenge: 500
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BZT52C5V1LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C5V1S-7-F BZT52C5V1S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 1923 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
610+0.12 EUR
944+0.08 EUR
1153+0.06 EUR
1923+0.04 EUR
Mindestbestellmenge: 455
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BZT52C5V1SQ-7-F BZT52C5V1SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
Mindestbestellmenge: 320
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BCX5410TA BCX5410TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
193+0.37 EUR
253+0.28 EUR
481+0.15 EUR
582+0.12 EUR
794+0.09 EUR
834+0.09 EUR
Mindestbestellmenge: 125
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BCX5416TA BCX5416TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 1508 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
233+0.31 EUR
352+0.20 EUR
422+0.17 EUR
792+0.09 EUR
837+0.09 EUR
Mindestbestellmenge: 157
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FZT653TA FZT653TA DIODES INCORPORATED FZT653.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 175MHz
auf Bestellung 1128 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
96+0.75 EUR
122+0.59 EUR
214+0.33 EUR
227+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 77
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DF04S-T DF04S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 1780 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.70 EUR
160+0.45 EUR
391+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 103
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DF08S-T DF08S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 1387 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
136+0.53 EUR
247+0.29 EUR
261+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 105
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SBR12A45SP5-13 DIODES INCORPORATED SBR12A45SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 12A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 280A
Kind of package: reel; tape
Capacitance: 1nF
Leakage current: 75mA
Produkt ist nicht verfügbar
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GBJ1510-F DIODES INCORPORATED GBJ15_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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DMT3020LFDBQ-7 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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DMT6002LPS-13 DIODES INCORPORATED DMT6002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 130.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
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DMT6004LPS-13 DIODES INCORPORATED DMT6004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 78.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
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DMT6004SCT DMT6004SCT DIODES INCORPORATED DMT6004SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 180A
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DMT6004SPS-13 DIODES INCORPORATED DMT6004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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DMT6005LFG-13 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
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DMT6005LFG-7 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
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DMT6005LPS-13 DIODES INCORPORATED DMT6005LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 500A
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DMT6006LK3-13 DIODES INCORPORATED DMT6006LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
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DMT6006LSS-13 DMT6006LSS-13 DIODES INCORPORATED DMT6006LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
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DMT6006SPS-13 DIODES INCORPORATED DMT6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 390A
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DMT6007LFG-13 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
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DMT6007LFG-7 DMT6007LFG-7 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Mounting: SMD
Case: PowerDI®3333-8
Drain-source voltage: 60V
Drain current: 70A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1987 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
66+1.09 EUR
93+0.78 EUR
98+0.73 EUR
500+0.70 EUR
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DMT6007LFGQ-13 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
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DMT6007LFGQ-7 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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DMT6008LFG-13 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
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DMT6008LFG-7 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
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SMBJ30A-13-F SMBJ30A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 1829 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
230+0.31 EUR
421+0.17 EUR
705+0.10 EUR
736+0.10 EUR
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AP2112K-1.2TRG1 AP2112K-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Case: SOT23-5
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 1.2V
Output current: 0.6A
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AP2112K-2.5TRG1 AP2112K-2.5TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Operating temperature: -40...85°C
Case: SOT23-5
Tolerance: ±1.5%
Output voltage: 2.5V
Output current: 0.6A
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
162+0.44 EUR
200+0.36 EUR
391+0.18 EUR
642+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 114
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SMBJ16A-13-F SMBJ16A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 643 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
213+0.34 EUR
275+0.26 EUR
417+0.17 EUR
610+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 162
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SMAJ58A-13-F SMAJ58A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 3826 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
309+0.23 EUR
467+0.15 EUR
554+0.13 EUR
920+0.08 EUR
971+0.07 EUR
Mindestbestellmenge: 193
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DMC3021LSD-13 DMC3021LSD-13 DIODES INCORPORATED DMC3021LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 136 Stücke:
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100+0.72 EUR
136+0.53 EUR
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SMAJ6.5A-13-F SMAJ6.5A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3230 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
302+0.24 EUR
388+0.18 EUR
755+0.10 EUR
958+0.08 EUR
1025+0.07 EUR
1053+0.07 EUR
Mindestbestellmenge: 218
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BSS127S-7 BSS127S-7 DIODES INCORPORATED BSS127.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 600V
Drain current: 70mA
On-state resistance: 160Ω
Type of transistor: N-MOSFET
Power dissipation: 0.61W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2911 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
196+0.37 EUR
249+0.29 EUR
532+0.13 EUR
808+0.09 EUR
855+0.08 EUR
Mindestbestellmenge: 132
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SMBJ58A-13-F SMBJ58A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2585 Stücke:
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280+0.26 EUR
465+0.15 EUR
530+0.14 EUR
605+0.12 EUR
645+0.11 EUR
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SMBJ26A-13-F SMBJ26A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3110 Stücke:
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200+0.36 EUR
262+0.27 EUR
343+0.21 EUR
550+0.13 EUR
715+0.10 EUR
758+0.09 EUR
1000+0.09 EUR
Mindestbestellmenge: 200
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DDTC114ECA-7-F
+1
 		DDTC114ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
auf Bestellung 3330 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
685+0.10 EUR
1386+0.05 EUR
1530+0.05 EUR
1846+0.04 EUR
3013+0.02 EUR
3185+0.02 EUR
Mindestbestellmenge: 500
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74HCT125S14-13 74HCT125S14-13 DIODES INCORPORATED 74HCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: HCT
auf Bestellung 585 Stücke:
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317+0.23 EUR
463+0.15 EUR
527+0.14 EUR
585+0.12 EUR
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TL431ASA-7 TL431ASA-7 DIODES INCORPORATED TL431_432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
183+0.39 EUR
223+0.32 EUR
290+0.25 EUR
421+0.17 EUR
764+0.09 EUR
Mindestbestellmenge: 132
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PAM8902HKER DIODES INCORPORATED PAM8902H.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Operating temperature: -40...125°C
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN16
Type of integrated circuit: audio amplifier
Number of channels: 1
Produkt ist nicht verfügbar
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74LVC2G17FW4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74LVC2G17FX4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Operating temperature: -40...150°C
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74LVC2G17FZ4-7 74LVC2G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Operating temperature: -40...150°C
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74LVC2G17W6-7 74LVC2G17.pdf
74LVC2G17W6-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT26; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT26
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Quiescent current: 40µA
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: LVC
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 2600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
146+0.49 EUR
186+0.39 EUR
397+0.18 EUR
650+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 99
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74LVC1G11DW-7 74LVC1G11.pdf
74LVC1G11DW-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of inputs: 3
Kind of output: push-pull
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.30 EUR
391+0.18 EUR
524+0.14 EUR
596+0.12 EUR
711+0.10 EUR
1413+0.05 EUR
1493+0.05 EUR
Mindestbestellmenge: 239
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74LVC1G08SE-7 74LVC1G08.pdf
74LVC1G08SE-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Family: LVC
Kind of output: push-pull
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
272+0.26 EUR
332+0.22 EUR
525+0.14 EUR
633+0.11 EUR
967+0.07 EUR
Mindestbestellmenge: 186
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DMN2025UFDF-7 DMN2025UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 12.3nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 30A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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BZT52C15-7-F BZT52Cxx_ser.pdf
BZT52C15-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5898 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
583+0.12 EUR
834+0.09 EUR
1017+0.07 EUR
1437+0.05 EUR
2294+0.03 EUR
3356+0.02 EUR
3547+0.02 EUR
Mindestbestellmenge: 583
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BZT52C15S-7-F BZT52CxxS_ser.pdf
BZT52C15S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 3590 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
556+0.13 EUR
1117+0.06 EUR
2778+0.03 EUR
2942+0.02 EUR
Mindestbestellmenge: 385
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BZT52C15SQ-7-F BZT52CxxS_ser.pdf
BZT52C15SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
599+0.12 EUR
834+0.09 EUR
920+0.08 EUR
Mindestbestellmenge: 599
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AP3211KTR-G1 AP3211x-DTE.pdf
AP3211KTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷18VDC; Uout: 0.81÷15VDC; 1.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...18V DC
Output voltage: 0.81...15V DC
Output current: 1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 92%
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
143+0.50 EUR
295+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 109
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PAM8407DR PAM8407.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SOP16; 2.5÷6VDC
Type of integrated circuit: audio amplifier
Output power: 3W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: SOP16
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...6V DC
Produkt ist nicht verfügbar
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PAM8408DR PAM8408.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SO16L; 2.5÷6VDC
Type of integrated circuit: audio amplifier
Output power: 3W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: SO16L
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...6V DC
Produkt ist nicht verfügbar
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AS7805AT-E1 AS78XXA.pdf
AS7805AT-E1
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA
Mounting: THT
Kind of package: tube
Case: TO220-3
Output voltage: 5V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 7.5...20V
Manufacturer series: AS78XXA
Kind of voltage regulator: fixed; linear
Operating temperature: -40...125°C
Tolerance: ±4%
auf Bestellung 1104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
171+0.42 EUR
196+0.37 EUR
325+0.22 EUR
345+0.21 EUR
Mindestbestellmenge: 105
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DF10M DF005_10M.pdf
DF10M
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Case: DFM
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
168+0.43 EUR
194+0.37 EUR
282+0.26 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
AP22966DC8-7 AP22966.pdf
AP22966DC8-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 6A; Ch: 2; N-Channel; SMD; reel,tape
Case: VDFN3020-14
Supply voltage: 0.8...5.5V DC
On-state resistance: 18mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: load switch
Mounting: SMD
Produkt ist nicht verfügbar
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APX803L40-16SA-7 APX803L.pdf
APX803L40-16SA-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Kind of package: reel; tape
Delay time: 450ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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BZT52C5V1-13-F BZT52Cxx_ser.pdf
BZT52C5V1-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3567 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
705+0.10 EUR
1334+0.05 EUR
1993+0.04 EUR
3031+0.02 EUR
3206+0.02 EUR
Mindestbestellmenge: 500
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BZT52C5V1-7-F BZT52Cxx_ser.pdf
BZT52C5V1-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3070 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
736+0.10 EUR
893+0.08 EUR
1539+0.05 EUR
3070+0.02 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C5V1LP-7 BZT52CxxLP_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C5V1S-7-F BZT52CxxS_ser.pdf
BZT52C5V1S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 1923 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
610+0.12 EUR
944+0.08 EUR
1153+0.06 EUR
1923+0.04 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C5V1SQ-7-F BZT52CxxS_ser.pdf
BZT52C5V1SQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
320+0.23 EUR
Mindestbestellmenge: 320
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BCX5410TA BCX54x-DTE.pdf
BCX5410TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
193+0.37 EUR
253+0.28 EUR
481+0.15 EUR
582+0.12 EUR
794+0.09 EUR
834+0.09 EUR
Mindestbestellmenge: 125
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BCX5416TA BCX54x-DTE.pdf
BCX5416TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 1508 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
233+0.31 EUR
352+0.20 EUR
422+0.17 EUR
792+0.09 EUR
837+0.09 EUR
Mindestbestellmenge: 157
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FZT653TA FZT653.pdf
FZT653TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 175MHz
auf Bestellung 1128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
96+0.75 EUR
122+0.59 EUR
214+0.33 EUR
227+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
DF04S-T DF005_10S.pdf
DF04S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 1780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.70 EUR
160+0.45 EUR
391+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
DF08S-T DF005_10S.pdf
DF08S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
auf Bestellung 1387 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
136+0.53 EUR
247+0.29 EUR
261+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
SBR12A45SP5-13 SBR12A45SP5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 12A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 280A
Kind of package: reel; tape
Capacitance: 1nF
Leakage current: 75mA
Produkt ist nicht verfügbar
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GBJ1510-F GBJ15_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Produkt ist nicht verfügbar
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DMT3020LFDBQ-7 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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DMT6002LPS-13 DMT6002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 130.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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DMT6004LPS-13 DMT6004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 78.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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DMT6004SCT DMT6004SCT.pdf
DMT6004SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 180A
Produkt ist nicht verfügbar
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DMT6004SPS-13 DMT6004SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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DMT6005LFG-13 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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DMT6005LFG-7 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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DMT6005LPS-13 DMT6005LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 500A
Produkt ist nicht verfügbar
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DMT6006LK3-13 DMT6006LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
Produkt ist nicht verfügbar
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DMT6006LSS-13 DMT6006LSS.pdf
DMT6006LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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DMT6006SPS-13 DMT6006SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 390A
Produkt ist nicht verfügbar
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DMT6007LFG-13 DMT6007LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Mounting: SMD
Case: PowerDI®3333-8
Drain-source voltage: 60V
Drain current: 70A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1987 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
66+1.09 EUR
93+0.78 EUR
98+0.73 EUR
500+0.70 EUR
Mindestbestellmenge: 55
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DMT6007LFGQ-13 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-7 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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DMT6008LFG-13 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6008LFG-7 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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SMBJ30A-13-F SMBJ_ser.pdf
SMBJ30A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 1829 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
230+0.31 EUR
421+0.17 EUR
705+0.10 EUR
736+0.10 EUR
Mindestbestellmenge: 139
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AP2112K-1.2TRG1 AP2112.pdf
AP2112K-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Case: SOT23-5
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 1.2V
Output current: 0.6A
Produkt ist nicht verfügbar
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AP2112K-2.5TRG1 AP2112.pdf
AP2112K-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Operating temperature: -40...85°C
Case: SOT23-5
Tolerance: ±1.5%
Output voltage: 2.5V
Output current: 0.6A
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
162+0.44 EUR
200+0.36 EUR
391+0.18 EUR
642+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ16A-13-F SMBJ_ser.pdf
SMBJ16A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 643 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
213+0.34 EUR
275+0.26 EUR
417+0.17 EUR
610+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ58A-13-F SMAJ_ser.pdf
SMAJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 3826 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
309+0.23 EUR
467+0.15 EUR
554+0.13 EUR
920+0.08 EUR
971+0.07 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
DMC3021LSD-13 DMC3021LSD-13.pdf
DMC3021LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
136+0.53 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ6.5A-13-F SMAJ_ser.pdf
SMAJ6.5A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
302+0.24 EUR
388+0.18 EUR
755+0.10 EUR
958+0.08 EUR
1025+0.07 EUR
1053+0.07 EUR
Mindestbestellmenge: 218
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BSS127S-7 BSS127.pdf
BSS127S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 600V
Drain current: 70mA
On-state resistance: 160Ω
Type of transistor: N-MOSFET
Power dissipation: 0.61W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2911 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
196+0.37 EUR
249+0.29 EUR
532+0.13 EUR
808+0.09 EUR
855+0.08 EUR
Mindestbestellmenge: 132
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SMBJ58A-13-F SMBJ_ser.pdf
SMBJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
280+0.26 EUR
465+0.15 EUR
530+0.14 EUR
605+0.12 EUR
645+0.11 EUR
Mindestbestellmenge: 280
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ26A-13-F SMBJ_ser.pdf
SMBJ26A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
262+0.27 EUR
343+0.21 EUR
550+0.13 EUR
715+0.10 EUR
758+0.09 EUR
1000+0.09 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
DDTC114ECA-7-F ds30329.pdf
DDTC114ECA-7-F
+1
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
auf Bestellung 3330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
685+0.10 EUR
1386+0.05 EUR
1530+0.05 EUR
1846+0.04 EUR
3013+0.02 EUR
3185+0.02 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
74HCT125S14-13 74HCT125.pdf
74HCT125S14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: HCT
auf Bestellung 585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
317+0.23 EUR
463+0.15 EUR
527+0.14 EUR
585+0.12 EUR
Mindestbestellmenge: 317
Im Einkaufswagen  Stück im Wert von  UAH
TL431ASA-7 TL431_432.pdf
TL431ASA-7
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
183+0.39 EUR
223+0.32 EUR
290+0.25 EUR
421+0.17 EUR
764+0.09 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
PAM8902HKER PAM8902H.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Operating temperature: -40...125°C
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN16
Type of integrated circuit: audio amplifier
Number of channels: 1
Produkt ist nicht verfügbar
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