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DESD1CAN2WQ-7 DIODES INCORPORATED DESD1CAN2WQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT323; Ch: 2; reel,tape
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: TVS array
Capacitance: 12pF
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Produkt ist nicht verfügbar
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DMP3036SFV-7 DIODES INCORPORATED DMP3036SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Drain current: -7A
Pulsed drain current: -80A
Gate-source voltage: ±25V
Kind of channel: enhancement
auf Bestellung 1979 Stücke:
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88+0.82 EUR
115+0.62 EUR
262+0.27 EUR
277+0.26 EUR
Mindestbestellmenge: 88
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DMN3024SFG-13 DMN3024SFG-13 DIODES INCORPORATED DMN3024SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
auf Bestellung 2348 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
161+0.45 EUR
296+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 143
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DXTP03100BFG-7 DIODES INCORPORATED DXTP03100BFG.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Case: PowerDI®3333-8
Current gain: 5...300
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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DXTP03060BFG-7 DIODES INCORPORATED DXTP03060BFG.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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DXTP03060CFG-7 DIODES INCORPORATED DXTP03060CFG.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Current gain: 45...800
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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DMP3036SFG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0EF28252A98BF&compId=DMP3036SFG.pdf?ci_sign=cc8d54bce64c90c85792844fd19ddc8f71d54472 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
On-state resistance: 29mΩ
Power dissipation: 0.9W
Drain current: -30A
Gate-source voltage: ±25V
Kind of channel: enhancement
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DMT8012LFG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CA98713DFC98BF&compId=DMT8012LFG.pdf?ci_sign=2f394e548e5183562151e1b893b891c5d29b54aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 80V
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 30A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DXTN07045DFG-7 DIODES INCORPORATED DXTN07045DFG.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
Produkt ist nicht verfügbar
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DXTN07060BFG-7 DIODES INCORPORATED DXTN07060BFG.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
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DXTN07100BFG-7 DIODES INCORPORATED DXTN07100BFG.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
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DMN10H170SFG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C884DCA4B818BF&compId=DMN10H170SFG.pdf?ci_sign=2a63843c6e47a1780b34bcc744d2e4ee8147f5a7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 100V
On-state resistance: 0.133Ω
Power dissipation: 1.3W
Drain current: 2.7A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN3009LFV-7 DIODES INCORPORATED DMN3009LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 9mΩ
Power dissipation: 2W
Drain current: 50A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN3009LFVW-7 DIODES INCORPORATED DMN3009LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 7.4mΩ
Power dissipation: 2W
Drain current: 48A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN3009LFVWQ-7 DIODES INCORPORATED DMN3009LFVWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 7.4mΩ
Power dissipation: 2W
Drain current: 48A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
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DMN6017SFV-7 DIODES INCORPORATED DMN6017SFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Gate charge: 55nC
On-state resistance: 20mΩ
Power dissipation: 2W
Drain current: 28A
Pulsed drain current: 140A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMT10H009LFG-7 DIODES INCORPORATED DMT10H009LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 41nC
On-state resistance: 12.5mΩ
Power dissipation: 2W
Drain current: 11A
Pulsed drain current: 200A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMT10H015LFG-13 DIODES INCORPORATED DMT10H015LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 100V
Gate charge: 33.3nC
On-state resistance: 23.5mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMT10H015LFG-7 DIODES INCORPORATED DMT10H015LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 33.3nC
On-state resistance: 23.5mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMTH8008LFGQ-7 DIODES INCORPORATED DMTH8008LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 70A; Idm: 280A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 80V
Gate charge: 37.7nC
On-state resistance: 6.9mΩ
Power dissipation: 50W
Drain current: 70A
Pulsed drain current: 280A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN10H170SFG-7 DIODES INCORPORATED DMN10H170SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 14.9nC
On-state resistance: 0.133Ω
Power dissipation: 1.3W
Drain current: 3A
Pulsed drain current: 16A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP4013LFG-7 DIODES INCORPORATED DMP4013LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 13mΩ
Power dissipation: 1W
Drain current: -8.3A
Pulsed drain current: 80A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2008UFG-7 DIODES INCORPORATED DMP2008UFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -20V
On-state resistance: 8mΩ
Power dissipation: 2.4W
Drain current: -11A
Pulsed drain current: -80A
Gate-source voltage: ±8V
Kind of channel: enhancement
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DMP3011SFVWQ-7 DIODES INCORPORATED DMP3011SFVWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -176A; 2.25W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 2.25W
Drain current: -50A
Pulsed drain current: -176A
Gate-source voltage: ±25V
Version: ESD
Kind of channel: enhancement
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DF01S-T DF01S-T DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 66 Stücke:
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66+1.09 EUR
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T12S5A-7 DIODES INCORPORATED T3V3S5A_T5V0S5A_T6V0S5A_T12S5A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 14.1V; 12A; unidirectional; SOD523; -65÷150°C
Operating temperature: -65...150°C
Mounting: SMD
Capacitance: 85pF
Leakage current: 10nA
Case: SOD523
Number of channels: 1
Semiconductor structure: unidirectional
Max. forward impulse current: 12A
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Peak pulse power dissipation: 0.3kW
Application: general purpose
Type of diode: TVS
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.036 EUR
Mindestbestellmenge: 3000
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SMAJ48CA-13-F SMAJ48CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ48CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.14 EUR
Mindestbestellmenge: 5000
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AH49FDNTR-G1 DIODES INCORPORATED AH49F.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.29 EUR
Mindestbestellmenge: 3000
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DXTN58100CFDB-7 DIODES INCORPORATED DXTN58100CFDB.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.23 EUR
Mindestbestellmenge: 3000
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SMAJ10CA-13-F SMAJ10CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10µA
Features of semiconductor devices: glass passivated
auf Bestellung 2754 Stücke:
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193+0.37 EUR
256+0.28 EUR
321+0.22 EUR
725+0.099 EUR
981+0.073 EUR
1042+0.069 EUR
Mindestbestellmenge: 193
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SMAJ10CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.14 EUR
Mindestbestellmenge: 5000
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SMAJ100CA-13-F SMAJ100CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ8.0CA-13-F SMAJ8.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2914 Stücke:
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218+0.33 EUR
275+0.26 EUR
332+0.22 EUR
443+0.16 EUR
642+0.11 EUR
820+0.087 EUR
863+0.083 EUR
Mindestbestellmenge: 218
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SMAJ8.5CA-13-F SMAJ8.5CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3124 Stücke:
Lieferzeit 14-21 Tag (e)
305+0.24 EUR
670+0.11 EUR
750+0.096 EUR
865+0.083 EUR
915+0.078 EUR
Mindestbestellmenge: 305
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SMAJ85A-13-F SMAJ85A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2929 Stücke:
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319+0.22 EUR
562+0.13 EUR
834+0.086 EUR
878+0.082 EUR
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SMAJ85CA-13-F SMAJ85CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ8.5CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DFLZ5V1-7 DFLZ5V1-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 414 Stücke:
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GBJ2508-F GBJ2508-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB2E1F1154D63E0D6&compId=GBJ25_ser.pdf?ci_sign=92e996aa69040eb55685153c969914b7434799a7 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Electrical mounting: THT
Kind of package: tube
Leads: flat pin
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Case: GBJ
auf Bestellung 46 Stücke:
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30+2.45 EUR
35+2.06 EUR
44+1.63 EUR
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SBR8U60P5-7 DIODES INCORPORATED SBR8U60P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 33000 Stücke:
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1500+0.44 EUR
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SBR8U60P5Q-13D DIODES INCORPORATED SBR8U60P5Q.pdf Category: Diodes - Unclassified
Description: SBR8U60P5Q-13D
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.59 EUR
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74HCT138T16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F8C0D3&compId=74HCT138.pdf?ci_sign=50ca252984f838069f1cdd7bc362472180881949 Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Number of inputs: 6
Technology: CMOS; TTL
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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74HCT138S16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F7C0D3&compId=74HCT138.pdf?ci_sign=5049214ed0155bd6174afa4cdfbf87e78716a93a Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: SO16
Family: HCT
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Number of inputs: 6
Technology: CMOS; TTL
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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ZXTN2007GTA DIODES INCORPORATED ZXTN2007G.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.56 EUR
Mindestbestellmenge: 1000
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ZXTC6720MCTA DIODES INCORPORATED ZXTC6720MC.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80/70V; 4/3A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80/70V
Collector current: 4/3A
Power dissipation: 2.45W
Case: WDFN3020-8
Pulsed collector current: 5A
Current gain: 10...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...160MHz
Produkt ist nicht verfügbar
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AL5890-40D-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 40mA; Ch: 1
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AL5890-10P1-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 10mA; Ch: 1
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AL5890-20D-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 20mA; Ch: 1
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SMBJ64CA-13-F SMBJ64CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1289 Stücke:
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179+0.4 EUR
228+0.31 EUR
258+0.28 EUR
407+0.18 EUR
575+0.12 EUR
1000+0.11 EUR
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SMBJ64A-13-F SMBJ64A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1413 Stücke:
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193+0.37 EUR
298+0.24 EUR
516+0.14 EUR
676+0.11 EUR
715+0.1 EUR
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AS78L05MTR-G1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: AS78LXX
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Kind of package: reel; tape
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AS78L05MTR-E1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: AS78LXX
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Kind of package: reel; tape
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DMT2005UDV-13 DIODES INCORPORATED DMT2005UDV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 12mΩ
Power dissipation: 1.9W
Gate-source voltage: ±12V
Drain-source voltage: 24V
Drain current: 40A
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 46.7nC
Produkt ist nicht verfügbar
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74AHC1G32SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02D20D3&compId=74AHC1G32.pdf?ci_sign=72e80d9ea8b3d9a1c3c63c8a61cb363053559b6a Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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SMAJ16CA-13-F SMAJ16CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1796 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
463+0.15 EUR
569+0.13 EUR
916+0.078 EUR
969+0.074 EUR
Mindestbestellmenge: 455
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SMAJ16CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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FZT1048ATA FZT1048ATA DIODES INCORPORATED FZT1048A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
86+0.84 EUR
152+0.47 EUR
161+0.45 EUR
500+0.44 EUR
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ZDT1048TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7FE10BB8720D2&compId=ZDT1048.pdf?ci_sign=a291fb71195cc7c7462bd2fb66def58f22b03396 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Current gain: 250
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ZTX1048A DIODES INCORPORATED ZTX1048A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 17.5V; 4A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 4A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 20A
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Produkt ist nicht verfügbar
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DESD1CAN2WQ-7 DESD1CAN2WQ.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT323; Ch: 2; reel,tape
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: TVS array
Capacitance: 12pF
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
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DMP3036SFV-7 DMP3036SFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Drain current: -7A
Pulsed drain current: -80A
Gate-source voltage: ±25V
Kind of channel: enhancement
auf Bestellung 1979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
115+0.62 EUR
262+0.27 EUR
277+0.26 EUR
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DMN3024SFG-13 DMN3024SFG.pdf
DMN3024SFG-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
auf Bestellung 2348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
161+0.45 EUR
296+0.24 EUR
313+0.23 EUR
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DXTP03100BFG-7 DXTP03100BFG.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Case: PowerDI®3333-8
Current gain: 5...300
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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DXTP03060BFG-7 DXTP03060BFG.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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DXTP03060CFG-7 DXTP03060CFG.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Current gain: 45...800
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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DMP3036SFG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0EF28252A98BF&compId=DMP3036SFG.pdf?ci_sign=cc8d54bce64c90c85792844fd19ddc8f71d54472
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
On-state resistance: 29mΩ
Power dissipation: 0.9W
Drain current: -30A
Gate-source voltage: ±25V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT8012LFG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986CA98713DFC98BF&compId=DMT8012LFG.pdf?ci_sign=2f394e548e5183562151e1b893b891c5d29b54aa
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 80V
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 30A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DXTN07045DFG-7 DXTN07045DFG.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
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DXTN07060BFG-7 DXTN07060BFG.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
Produkt ist nicht verfügbar
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DXTN07100BFG-7 DXTN07100BFG.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
Produkt ist nicht verfügbar
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DMN10H170SFG-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C884DCA4B818BF&compId=DMN10H170SFG.pdf?ci_sign=2a63843c6e47a1780b34bcc744d2e4ee8147f5a7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 100V
On-state resistance: 0.133Ω
Power dissipation: 1.3W
Drain current: 2.7A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3009LFV-7 DMN3009LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 9mΩ
Power dissipation: 2W
Drain current: 50A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3009LFVW-7 DMN3009LFVW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 7.4mΩ
Power dissipation: 2W
Drain current: 48A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3009LFVWQ-7 DMN3009LFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 7.4mΩ
Power dissipation: 2W
Drain current: 48A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMN6017SFV-7 DMN6017SFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Gate charge: 55nC
On-state resistance: 20mΩ
Power dissipation: 2W
Drain current: 28A
Pulsed drain current: 140A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT10H009LFG-7 DMT10H009LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 41nC
On-state resistance: 12.5mΩ
Power dissipation: 2W
Drain current: 11A
Pulsed drain current: 200A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT10H015LFG-13 DMT10H015LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 100V
Gate charge: 33.3nC
On-state resistance: 23.5mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT10H015LFG-7 DMT10H015LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 33.3nC
On-state resistance: 23.5mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMTH8008LFGQ-7 DMTH8008LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 70A; Idm: 280A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 80V
Gate charge: 37.7nC
On-state resistance: 6.9mΩ
Power dissipation: 50W
Drain current: 70A
Pulsed drain current: 280A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN10H170SFG-7 DMN10H170SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 14.9nC
On-state resistance: 0.133Ω
Power dissipation: 1.3W
Drain current: 3A
Pulsed drain current: 16A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP4013LFG-7 DMP4013LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 13mΩ
Power dissipation: 1W
Drain current: -8.3A
Pulsed drain current: 80A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2008UFG-7 DMP2008UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -20V
On-state resistance: 8mΩ
Power dissipation: 2.4W
Drain current: -11A
Pulsed drain current: -80A
Gate-source voltage: ±8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3011SFVWQ-7 DMP3011SFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -176A; 2.25W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 2.25W
Drain current: -50A
Pulsed drain current: -176A
Gate-source voltage: ±25V
Version: ESD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DF01S-T pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f
DF01S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
Mindestbestellmenge: 66
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T12S5A-7 T3V3S5A_T5V0S5A_T6V0S5A_T12S5A.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 14.1V; 12A; unidirectional; SOD523; -65÷150°C
Operating temperature: -65...150°C
Mounting: SMD
Capacitance: 85pF
Leakage current: 10nA
Case: SOD523
Number of channels: 1
Semiconductor structure: unidirectional
Max. forward impulse current: 12A
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Peak pulse power dissipation: 0.3kW
Application: general purpose
Type of diode: TVS
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.036 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ48CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ48CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ48CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
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AH49FDNTR-G1 AH49F.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.29 EUR
Mindestbestellmenge: 3000
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DXTN58100CFDB-7 DXTN58100CFDB.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ10CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ10CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10µA
Features of semiconductor devices: glass passivated
auf Bestellung 2754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
256+0.28 EUR
321+0.22 EUR
725+0.099 EUR
981+0.073 EUR
1042+0.069 EUR
Mindestbestellmenge: 193
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SMAJ10CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ100CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ100CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ8.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ8.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2914 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
275+0.26 EUR
332+0.22 EUR
443+0.16 EUR
642+0.11 EUR
820+0.087 EUR
863+0.083 EUR
Mindestbestellmenge: 218
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SMAJ8.5CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ8.5CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
305+0.24 EUR
670+0.11 EUR
750+0.096 EUR
865+0.083 EUR
915+0.078 EUR
Mindestbestellmenge: 305
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SMAJ85A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ85A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
319+0.22 EUR
562+0.13 EUR
834+0.086 EUR
878+0.082 EUR
Mindestbestellmenge: 209
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SMAJ85CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ85CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ8.5CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DFLZ5V1-7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1
DFLZ5V1-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
414+0.17 EUR
Mindestbestellmenge: 313
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GBJ2508-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB2E1F1154D63E0D6&compId=GBJ25_ser.pdf?ci_sign=92e996aa69040eb55685153c969914b7434799a7
GBJ2508-F
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Electrical mounting: THT
Kind of package: tube
Leads: flat pin
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Case: GBJ
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
30+2.45 EUR
35+2.06 EUR
44+1.63 EUR
46+1.56 EUR
Mindestbestellmenge: 28
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SBR8U60P5-7 SBR8U60P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+0.44 EUR
Mindestbestellmenge: 1500
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SBR8U60P5Q-13D SBR8U60P5Q.pdf
Hersteller: DIODES INCORPORATED
Category: Diodes - Unclassified
Description: SBR8U60P5Q-13D
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.59 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74HCT138T16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F8C0D3&compId=74HCT138.pdf?ci_sign=50ca252984f838069f1cdd7bc362472180881949
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Number of inputs: 6
Technology: CMOS; TTL
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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74HCT138S16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F7C0D3&compId=74HCT138.pdf?ci_sign=5049214ed0155bd6174afa4cdfbf87e78716a93a
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: SO16
Family: HCT
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Number of inputs: 6
Technology: CMOS; TTL
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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ZXTN2007GTA ZXTN2007G.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.56 EUR
Mindestbestellmenge: 1000
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ZXTC6720MCTA ZXTC6720MC.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80/70V; 4/3A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80/70V
Collector current: 4/3A
Power dissipation: 2.45W
Case: WDFN3020-8
Pulsed collector current: 5A
Current gain: 10...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...160MHz
Produkt ist nicht verfügbar
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AL5890-40D-13 AL5890.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 40mA; Ch: 1
Produkt ist nicht verfügbar
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AL5890-10P1-13 AL5890.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 10mA; Ch: 1
Produkt ist nicht verfügbar
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AL5890-20D-13 AL5890.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 20mA; Ch: 1
Produkt ist nicht verfügbar
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SMBJ64CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ64CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
228+0.31 EUR
258+0.28 EUR
407+0.18 EUR
575+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 179
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SMBJ64A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ64A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1413 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
298+0.24 EUR
516+0.14 EUR
676+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 193
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AS78L05MTR-G1 AS78Lxx_Aug2013_DS.pdf
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: AS78LXX
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AS78L05MTR-E1 AS78Lxx_Aug2013_DS.pdf
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: AS78LXX
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMT2005UDV-13 DMT2005UDV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 12mΩ
Power dissipation: 1.9W
Gate-source voltage: ±12V
Drain-source voltage: 24V
Drain current: 40A
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 46.7nC
Produkt ist nicht verfügbar
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74AHC1G32SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02D20D3&compId=74AHC1G32.pdf?ci_sign=72e80d9ea8b3d9a1c3c63c8a61cb363053559b6a
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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SMAJ16CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ16CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
463+0.15 EUR
569+0.13 EUR
916+0.078 EUR
969+0.074 EUR
Mindestbestellmenge: 455
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SMAJ16CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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FZT1048ATA FZT1048A.pdf
FZT1048ATA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
86+0.84 EUR
152+0.47 EUR
161+0.45 EUR
500+0.44 EUR
Mindestbestellmenge: 52
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ZDT1048TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7FE10BB8720D2&compId=ZDT1048.pdf?ci_sign=a291fb71195cc7c7462bd2fb66def58f22b03396
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Current gain: 250
Produkt ist nicht verfügbar
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ZTX1048A ZTX1048A.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 17.5V; 4A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 4A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 20A
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Produkt ist nicht verfügbar
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