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DGD0280WTQ-7 DIODES INCORPORATED DGD0280WTQ.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.76 EUR
Mindestbestellmenge: 3000
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DGD0590AFU-7 DIODES INCORPORATED DGD0590A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
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DGD0506AM10-13 DIODES INCORPORATED DGD0506A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: MSOP10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
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DGD0506AFN-7 DIODES INCORPORATED DGD0506A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
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DGD0503FN-7 DIODES INCORPORATED DGD0503.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 170ns
Pulse fall time: 90ns
Kind of package: reel; tape
Supply voltage: 10...20V
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DGD05473FN-7 DIODES INCORPORATED DGD05473.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VDFN10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
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DGD0504FN-7 DIODES INCORPORATED DGD0504.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
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DGD0507AFN-7 DIODES INCORPORATED DGD0507A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
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DGD05463FN-7 DIODES INCORPORATED DGD05463.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2.5÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
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DGD05473FNQ-7 DIODES INCORPORATED DGD05473FNQ.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: U-DFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.4...14V
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DGD05463M10-13 DIODES INCORPORATED DGD05463.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.43 EUR
Mindestbestellmenge: 2500
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DMN3055LFDB-13 DIODES INCORPORATED DMN3055LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Gate charge: 11.2nC
On-state resistance: 75mΩ
Power dissipation: 0.87W
Drain current: 4A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
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DMN3055LFDBQ-7 DIODES INCORPORATED DMN3055LFDBQ.pdf Category: Unclassified
Description: DMN3055LFDBQ-7
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
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74LVC04AT14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F85B00D3&compId=74LVC04A.pdf?ci_sign=5112c4f09ba3beb60ea48cb08c9348156d912f18 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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74LVC04AS14-13 DIODES INCORPORATED 74LVC04A.pdf Category: Integrated circuits - Unclassified
Description: 74LVC04AS14-13
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.1 EUR
Mindestbestellmenge: 2500
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SMCJ36CA-13-F SMCJ36CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36A-13-F SMCJ36A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMCJ36CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DMP2110U-7 DMP2110U-7 DIODES INCORPORATED DMP2110U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2110UVT-13 DMP2110UVT-13 DIODES INCORPORATED DMP2110UVT.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -15A
Power dissipation: 0.74W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2110UW-7 DMP2110UW-7 DIODES INCORPORATED DMP2110UW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -15A; 650mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -15A
Power dissipation: 0.65W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2110U-13 DIODES INCORPORATED DMP2110U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 20V; 3.5A; 1.2W; SOT23
Type of transistor: P-MOSFET
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: 10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 10000 Stücke:
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10000+0.09 EUR
Mindestbestellmenge: 10000
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DMP2110UFDB-7 DIODES INCORPORATED DMP2110UFDB.pdf Category: Multi channel transistors
Description: DMP2110UFDB-7
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Lieferzeit 14-21 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
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DMP2110UFDBQ-7 DIODES INCORPORATED DMP2110UFDBQ.pdf Category: Transistors - Unclassified
Description: DMP2110UFDBQ-7
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
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DMP1555UFA-7B DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E043C3931EB8BF&compId=DMP1555UFA.pdf?ci_sign=ab286bdf5831761a51fb8ed4077e67484a06d6f4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Case: X2-DFN0806-3
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -0.2A
Power dissipation: 0.36W
On-state resistance: 5Ω
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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SDMK0340L-7-F SDMK0340L-7-F DIODES INCORPORATED ds30239.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.16W
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
544+0.13 EUR
676+0.11 EUR
746+0.096 EUR
890+0.08 EUR
932+0.077 EUR
942+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 455
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BZX84B4V7-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84B4V7Q-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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DZ23C4V7-7-F DIODES INCORPORATED DZ23C2V7-DZ23C51.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
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MMBZ5230B-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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AZ2185D-ADJTRG1 DIODES INCORPORATED AZ2185.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3A; TO252; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.5V
Output current: 3A
Case: TO252
Mounting: SMD
Manufacturer series: AZ2185
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...12V
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BZX84C8V2-7-F BZX84C8V2-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 3008 Stücke:
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556+0.13 EUR
1087+0.066 EUR
1961+0.036 EUR
2605+0.027 EUR
3008+0.024 EUR
Mindestbestellmenge: 556
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BZX84C8V2-13-F BZX84C8V2-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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1480+0.049 EUR
2720+0.026 EUR
3080+0.023 EUR
3360+0.021 EUR
3560+0.02 EUR
Mindestbestellmenge: 1480
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AZ23C8V2-7-F AZ23C8V2-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 5980 Stücke:
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313+0.23 EUR
379+0.19 EUR
459+0.16 EUR
983+0.073 EUR
1401+0.051 EUR
1480+0.048 EUR
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DZ23C8V2-7-F DIODES INCORPORATED DZ23C2V7-DZ23C51.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
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BZX84B8V2-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84B8V2Q-7-F DIODES INCORPORATED Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C8V2Q-7-F BZX84C8V2Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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DDZX8V2C-7 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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MMBZ5237B-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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DESD5V0S1BA-7 DESD5V0S1BA-7 DIODES INCORPORATED DESD5V0S1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 1485 Stücke:
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239+0.3 EUR
334+0.21 EUR
521+0.14 EUR
642+0.11 EUR
1053+0.068 EUR
1117+0.064 EUR
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RS3BB-13-F DIODES INCORPORATED RS3A_B%7ERS3M_B.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Reverse recovery time: 150ns
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SMCJ54A-13-F SMCJ54A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1961 Stücke:
Lieferzeit 14-21 Tag (e)
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136+0.53 EUR
145+0.49 EUR
336+0.21 EUR
355+0.2 EUR
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SMCJ54CA-13-F SMCJ54CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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LM4040B50FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZXMN2F30FHTA ZXMN2F30FHTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBE954944878BF&compId=ZXMN2F30FH.pdf?ci_sign=884ba43bd7f5999465428915f88a6714937b5ae8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
225+0.32 EUR
397+0.18 EUR
435+0.16 EUR
Mindestbestellmenge: 152
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ZXMN2F30FHQTA ZXMN2F30FHQTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBE31D939418BF&compId=ZXMN2F30FHQ.pdf?ci_sign=54859c72506a1314355b49c979b086780f411010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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APX803-26SAG-7 APX803-26SAG-7 DIODES INCORPORATED APX803_D_Rev_3.3.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Delay time: 200ms
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
164+0.44 EUR
206+0.35 EUR
286+0.25 EUR
463+0.15 EUR
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DMN3730U-7 DMN3730U-7 DIODES INCORPORATED DMN3730U_Mar2022.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.45W
On-state resistance: 0.46Ω
Drain current: 0.75A
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain-source voltage: 30V
Case: SOT23
Kind of package: 7 inch reel; tape
auf Bestellung 1404 Stücke:
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157+0.46 EUR
247+0.29 EUR
353+0.2 EUR
407+0.18 EUR
596+0.12 EUR
633+0.11 EUR
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AZ23C5V6W-7-F DIODES INCORPORATED ds30257.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
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DMP2003UPS-13 DIODES INCORPORATED DMP2003UPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -350A
Drain current: -120A
Drain-source voltage: -20V
Gate charge: 177nC
On-state resistance: 4mΩ
Power dissipation: 2.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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KBP306G DIODES INCORPORATED KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf KBP304G-KBP310G.pdf kbp302g.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 3A; Ifsm: 90A; flat
Leads: flat pin
Version: flat
Case: KBP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 90A
Kind of package: tube
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AP2171MPG-13 AP2171MPG-13 DIODES INCORPORATED AP2161_71.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
111+0.65 EUR
121+0.59 EUR
252+0.28 EUR
266+0.27 EUR
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AP2141MPG-13
+1
 		AP2141MPG-13 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
auf Bestellung 942 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
119+0.6 EUR
129+0.55 EUR
277+0.26 EUR
293+0.24 EUR
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AP1539SDPG-13 AP1539SDPG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA85B2FF9ADE28&compId=AP1539x-DTE.pdf?ci_sign=e8e94eca2420bc5b7400f1e78c21de61f48fafc8 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 4A; SMD
Operating temperature: -20...85°C
Output current: 4A
Output voltage: 0.8...18V DC
Input voltage: 3.6...18V DC
Efficiency: 92%
Frequency: 300kHz
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: SOP-8L-DEP
Type of integrated circuit: PMIC
Mounting: SMD
auf Bestellung 2456 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.22 EUR
47+1.52 EUR
63+1.15 EUR
102+0.7 EUR
108+0.66 EUR
110+0.65 EUR
250+0.64 EUR
Mindestbestellmenge: 33
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AP7173-SPG-13 AP7173-SPG-13 DIODES INCORPORATED AP7173.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; SMD
Manufacturer series: AP7173
Operating temperature: -40...85°C
Voltage drop: 1.7V
Output current: 1.5A
Output voltage: 1...5.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.7...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: SO8-EP
Type of integrated circuit: voltage regulator
Mounting: SMD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
99+0.73 EUR
113+0.63 EUR
260+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 61
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AP8802SPG-13 AP8802SPG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98693AE34B06ED8BF&compId=AP8802.pdf?ci_sign=62fea9875785d207bb7d1d9f60c3477da7596d12 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷48VDC; 1A; SO8-EP; SMD; 700kHz; 92%
Operating temperature: -40...105°C
Output current: 1A
Input voltage: 8...48V DC
Efficiency: 92%
Frequency: 700kHz
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: SO8-EP
Type of integrated circuit: PMIC
Mounting: SMD
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AP2151MPG-13 AP2151MPG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED88397878127F88A18&compId=AP2141-51.pdf?ci_sign=1b5ee9fe832d10aadb25611ee71f4897c5d0609e Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
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AP2156MPG-13 DIODES INCORPORATED AP2146_56.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
On-state resistance: 90mΩ
Output current: 0.5A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Produkt ist nicht verfügbar
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DGD0280WTQ-7 DGD0280WTQ.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.76 EUR
Mindestbestellmenge: 3000
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DGD0590AFU-7 DGD0590A.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
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DGD0506AM10-13 DGD0506A.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: MSOP10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
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DGD0506AFN-7 DGD0506A.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
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DGD0503FN-7 DGD0503.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 170ns
Pulse fall time: 90ns
Kind of package: reel; tape
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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DGD05473FN-7 DGD05473.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VDFN10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
Produkt ist nicht verfügbar
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DGD0504FN-7 DGD0504.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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DGD0507AFN-7 DGD0507A.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
Produkt ist nicht verfügbar
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DGD05463FN-7 DGD05463.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2.5÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
Produkt ist nicht verfügbar
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DGD05473FNQ-7 DGD05473FNQ.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: U-DFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.4...14V
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DGD05463M10-13 DGD05463.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.43 EUR
Mindestbestellmenge: 2500
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DMN3055LFDB-13 DMN3055LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Gate charge: 11.2nC
On-state resistance: 75mΩ
Power dissipation: 0.87W
Drain current: 4A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
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DMN3055LFDBQ-7 DMN3055LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unclassified
Description: DMN3055LFDBQ-7
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74LVC04AT14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F85B00D3&compId=74LVC04A.pdf?ci_sign=5112c4f09ba3beb60ea48cb08c9348156d912f18
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74LVC04AS14-13 74LVC04A.pdf
Hersteller: DIODES INCORPORATED
Category: Integrated circuits - Unclassified
Description: 74LVC04AS14-13
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.1 EUR
Mindestbestellmenge: 2500
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SMCJ36CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ36CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMCJ36A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ36A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMCJ36AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ36CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DMP2110U-7 DMP2110U.pdf
DMP2110U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2110UVT-13 DMP2110UVT.pdf
DMP2110UVT-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -15A
Power dissipation: 0.74W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2110UW-7 DMP2110UW.pdf
DMP2110UW-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -15A; 650mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -15A
Power dissipation: 0.65W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2110U-13 DMP2110U.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 20V; 3.5A; 1.2W; SOT23
Type of transistor: P-MOSFET
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: 10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.09 EUR
Mindestbestellmenge: 10000
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DMP2110UFDB-7 DMP2110UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: DMP2110UFDB-7
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMP2110UFDBQ-7 DMP2110UFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: DMP2110UFDBQ-7
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMP1555UFA-7B pVersion=0046&contRep=ZT&docId=005056AB82531EE986E043C3931EB8BF&compId=DMP1555UFA.pdf?ci_sign=ab286bdf5831761a51fb8ed4077e67484a06d6f4
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Case: X2-DFN0806-3
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -0.2A
Power dissipation: 0.36W
On-state resistance: 5Ω
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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SDMK0340L-7-F ds30239.pdf
SDMK0340L-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.16W
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
544+0.13 EUR
676+0.11 EUR
746+0.096 EUR
890+0.08 EUR
932+0.077 EUR
942+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 455
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BZX84B4V7-7-F BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B4V7Q-7-F BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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DZ23C4V7-7-F DZ23C2V7-DZ23C51.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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MMBZ5230B-7-F MMBZ5221B-MMBZ5259B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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AZ2185D-ADJTRG1 AZ2185.pdf
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3A; TO252; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.5V
Output current: 3A
Case: TO252
Mounting: SMD
Manufacturer series: AZ2185
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...12V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C8V2-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 3008 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
1087+0.066 EUR
1961+0.036 EUR
2605+0.027 EUR
3008+0.024 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C8V2-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 4920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1480+0.049 EUR
2720+0.026 EUR
3080+0.023 EUR
3360+0.021 EUR
3560+0.02 EUR
Mindestbestellmenge: 1480
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AZ23C8V2-7-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8
AZ23C8V2-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 5980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
379+0.19 EUR
459+0.16 EUR
983+0.073 EUR
1401+0.051 EUR
1480+0.048 EUR
Mindestbestellmenge: 313
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DZ23C8V2-7-F DZ23C2V7-DZ23C51.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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BZX84B8V2-7-F BZX84Bxxx.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84B8V2Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C8V2Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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DDZX8V2C-7 ds30408.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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MMBZ5237B-7-F MMBZ5221B-MMBZ5259B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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DESD5V0S1BA-7 DESD5V0S1BA.pdf
DESD5V0S1BA-7
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 1485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
334+0.21 EUR
521+0.14 EUR
642+0.11 EUR
1053+0.068 EUR
1117+0.064 EUR
Mindestbestellmenge: 239
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RS3BB-13-F RS3A_B%7ERS3M_B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ54A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ54A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1961 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
136+0.53 EUR
145+0.49 EUR
336+0.21 EUR
355+0.2 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ54CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ54CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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LM4040B50FTA LM4040.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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ZXMN2F30FHTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBE954944878BF&compId=ZXMN2F30FH.pdf?ci_sign=884ba43bd7f5999465428915f88a6714937b5ae8
ZXMN2F30FHTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
225+0.32 EUR
397+0.18 EUR
435+0.16 EUR
Mindestbestellmenge: 152
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ZXMN2F30FHQTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBE31D939418BF&compId=ZXMN2F30FHQ.pdf?ci_sign=54859c72506a1314355b49c979b086780f411010
ZXMN2F30FHQTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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APX803-26SAG-7 APX803_D_Rev_3.3.pdf
APX803-26SAG-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Delay time: 200ms
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
164+0.44 EUR
206+0.35 EUR
286+0.25 EUR
463+0.15 EUR
Mindestbestellmenge: 103
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DMN3730U-7 DMN3730U_Mar2022.pdf
DMN3730U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.45W
On-state resistance: 0.46Ω
Drain current: 0.75A
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain-source voltage: 30V
Case: SOT23
Kind of package: 7 inch reel; tape
auf Bestellung 1404 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
247+0.29 EUR
353+0.2 EUR
407+0.18 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 157
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AZ23C5V6W-7-F ds30257.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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DMP2003UPS-13 DMP2003UPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -350A
Drain current: -120A
Drain-source voltage: -20V
Gate charge: 177nC
On-state resistance: 4mΩ
Power dissipation: 2.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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KBP306G KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf KBP304G-KBP310G.pdf kbp302g.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 3A; Ifsm: 90A; flat
Leads: flat pin
Version: flat
Case: KBP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 90A
Kind of package: tube
Produkt ist nicht verfügbar
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AP2171MPG-13 AP2161_71.pdf
AP2171MPG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
111+0.65 EUR
121+0.59 EUR
252+0.28 EUR
266+0.27 EUR
Mindestbestellmenge: 77
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AP2141MPG-13 AP2141-51.pdf
AP2141MPG-13
+1
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
auf Bestellung 942 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
119+0.6 EUR
129+0.55 EUR
277+0.26 EUR
293+0.24 EUR
Mindestbestellmenge: 84
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AP1539SDPG-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA85B2FF9ADE28&compId=AP1539x-DTE.pdf?ci_sign=e8e94eca2420bc5b7400f1e78c21de61f48fafc8
AP1539SDPG-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 4A; SMD
Operating temperature: -20...85°C
Output current: 4A
Output voltage: 0.8...18V DC
Input voltage: 3.6...18V DC
Efficiency: 92%
Frequency: 300kHz
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: SOP-8L-DEP
Type of integrated circuit: PMIC
Mounting: SMD
auf Bestellung 2456 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
47+1.52 EUR
63+1.15 EUR
102+0.7 EUR
108+0.66 EUR
110+0.65 EUR
250+0.64 EUR
Mindestbestellmenge: 33
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AP7173-SPG-13 AP7173.pdf
AP7173-SPG-13
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; SMD
Manufacturer series: AP7173
Operating temperature: -40...85°C
Voltage drop: 1.7V
Output current: 1.5A
Output voltage: 1...5.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.7...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: SO8-EP
Type of integrated circuit: voltage regulator
Mounting: SMD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
99+0.73 EUR
113+0.63 EUR
260+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 61
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AP8802SPG-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE98693AE34B06ED8BF&compId=AP8802.pdf?ci_sign=62fea9875785d207bb7d1d9f60c3477da7596d12
AP8802SPG-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷48VDC; 1A; SO8-EP; SMD; 700kHz; 92%
Operating temperature: -40...105°C
Output current: 1A
Input voltage: 8...48V DC
Efficiency: 92%
Frequency: 700kHz
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: SO8-EP
Type of integrated circuit: PMIC
Mounting: SMD
Produkt ist nicht verfügbar
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AP2151MPG-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED88397878127F88A18&compId=AP2141-51.pdf?ci_sign=1b5ee9fe832d10aadb25611ee71f4897c5d0609e
AP2151MPG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Produkt ist nicht verfügbar
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AP2156MPG-13 AP2146_56.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
On-state resistance: 90mΩ
Output current: 0.5A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Produkt ist nicht verfügbar
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