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DMG2302UK-7
+1
 		DMG2302UK-7 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 90mΩ
Power dissipation: 0.66W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 2.2A
Version: ESD
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
auf Bestellung 2955 Stücke:
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209+0.34 EUR
304+0.24 EUR
472+0.15 EUR
573+0.12 EUR
1038+0.069 EUR
1099+0.065 EUR
Mindestbestellmenge: 209
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DMN2056U-7 DMN2056U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3BB87C4EA18BF&compId=DMN2056U.pdf?ci_sign=02858e5a2ae901756f0aa55529d040dd315a3492 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 0.94W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 3.7A
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
auf Bestellung 2588 Stücke:
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193+0.37 EUR
274+0.26 EUR
391+0.18 EUR
459+0.16 EUR
603+0.12 EUR
642+0.11 EUR
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DMG2302UKQ-7 DMG2302UKQ-7 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 2.2A
Type of transistor: N-MOSFET
Application: automotive industry
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMG2302UK-13 DMG2302UK-13 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 2.2A
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 13 inch reel; tape
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DMG2302UKQ-13 DMG2302UKQ-13 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 2.2A
Type of transistor: N-MOSFET
Application: automotive industry
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 13 inch reel; tape
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DMG2302UQ-7 DMG2302UQ-7 DIODES INCORPORATED DMG2302UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Case: SOT23
Mounting: SMD
Gate charge: 4.3nC
On-state resistance: 45mΩ
Power dissipation: 1.2W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 3.8A
Type of transistor: N-MOSFET
Application: automotive industry
Gate-source voltage: ±8V
Pulsed drain current: 25A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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FZT688BTA FZT688BTA DIODES INCORPORATED FZT688.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 225 Stücke:
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98+0.73 EUR
149+0.48 EUR
158+0.45 EUR
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DMN3065LW-7 DMN3065LW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED90BB128E54A18&compId=DMN3065LW.pdf?ci_sign=64395f49275f7994814ea379c2493f36ffcd24f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
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202+0.35 EUR
283+0.25 EUR
329+0.22 EUR
562+0.13 EUR
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ADC114EUQ-7 DIODES INCORPORATED ADC114EUQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Application: automotive industry
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DDC114EH-7 DIODES INCORPORATED ds30421.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
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ADC114EUQ-13 DIODES INCORPORATED ADC114EUQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 10000pcs.
Current gain: 30
Application: automotive industry
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DDC114EUQ-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Pulsed collector current: 0.1A
Quantity in set/package: 3000pcs.
Current gain: 56
Application: automotive industry
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DDTC114ELP-7 DIODES INCORPORATED ds30945.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 10...100
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1SMB5929B-13 1SMB5929B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1339 Stücke:
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152+0.47 EUR
184+0.39 EUR
210+0.34 EUR
329+0.22 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 152
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1SMB5921B-13 1SMB5921B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 799 Stücke:
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152+0.47 EUR
237+0.3 EUR
291+0.25 EUR
321+0.22 EUR
550+0.13 EUR
582+0.12 EUR
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1SMB5922B-13 1SMB5922B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 2675 Stücke:
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152+0.47 EUR
226+0.32 EUR
397+0.18 EUR
532+0.13 EUR
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1SMB5952B-13 1SMB5952B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 130V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 130V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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1SMB5948B-13 1SMB5948B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
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SBR0330CW-7 DIODES INCORPORATED SBR0330CW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape
Mounting: SMD
Load current: 0.3A
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Features of semiconductor devices: small signal
Case: SOT323
Type of diode: switching
Produkt ist nicht verfügbar
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DFLU1200-7 DFLU1200-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF13ABCF2188745&compId=DFLU1200.pdf?ci_sign=1ea382f64970adb9e628efd713d2e31669b3d33b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; PowerDI®123; Ufmax: 0.98V
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 27pF
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: superfast switching
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175+0.41 EUR
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DMN3042L-7 DMN3042L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C970B7E97238BF&compId=DMN3042L.pdf?ci_sign=dc29de961bbfa8e5d871beaa03a4027b9ae91cc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 0.72W
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288+0.25 EUR
338+0.21 EUR
500+0.14 EUR
582+0.12 EUR
715+0.1 EUR
758+0.094 EUR
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SMBJ90A-13-F SMBJ90A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTC143XCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
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DDTC143XE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
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DDTC143XUA-7-F DIODES INCORPORATED ds30322.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMBJ18A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ18AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FZT491TA FZT491TA DIODES INCORPORATED FZT491.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 3W
Collector current: 1A
Collector-emitter voltage: 60V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
auf Bestellung 1003 Stücke:
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61+1.17 EUR
93+0.77 EUR
175+0.41 EUR
186+0.39 EUR
500+0.37 EUR
Mindestbestellmenge: 61
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DDZ9678-7 DDZ9678-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAFA2464FD0F5A0C7&compId=DDZ9689-7.pdf?ci_sign=05597935c68b55bc9ecc5af47c59eeca288462c8 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
auf Bestellung 789 Stücke:
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500+0.14 EUR
673+0.11 EUR
789+0.09 EUR
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DMG2302UK-7 DMG2302UK.pdf
DMG2302UK-7
+1
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 90mΩ
Power dissipation: 0.66W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 2.2A
Version: ESD
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
304+0.24 EUR
472+0.15 EUR
573+0.12 EUR
1038+0.069 EUR
1099+0.065 EUR
Mindestbestellmenge: 209
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DMN2056U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3BB87C4EA18BF&compId=DMN2056U.pdf?ci_sign=02858e5a2ae901756f0aa55529d040dd315a3492
DMN2056U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 0.94W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 3.7A
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
auf Bestellung 2588 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
274+0.26 EUR
391+0.18 EUR
459+0.16 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 193
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DMG2302UKQ-7 DMG2302UKQ.pdf
DMG2302UKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 2.2A
Type of transistor: N-MOSFET
Application: automotive industry
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMG2302UK-13 DMG2302UK.pdf
DMG2302UK-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 2.2A
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMG2302UKQ-13 DMG2302UKQ.pdf
DMG2302UKQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 2.2A
Type of transistor: N-MOSFET
Application: automotive industry
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Case: SOT23
Mounting: SMD
Gate charge: 4.3nC
On-state resistance: 45mΩ
Power dissipation: 1.2W
Kind of channel: enhancement
Polarisation: unipolar
Drain current: 3.8A
Type of transistor: N-MOSFET
Application: automotive industry
Gate-source voltage: ±8V
Pulsed drain current: 25A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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FZT688BTA FZT688.pdf
FZT688BTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
98+0.73 EUR
149+0.48 EUR
158+0.45 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
DMN3065LW-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED90BB128E54A18&compId=DMN3065LW.pdf?ci_sign=64395f49275f7994814ea379c2493f36ffcd24f2
DMN3065LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
202+0.35 EUR
283+0.25 EUR
329+0.22 EUR
562+0.13 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
ADC114EUQ-7 ADC114EUQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Application: automotive industry
Produkt ist nicht verfügbar
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DDC114EH-7 ds30421.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ADC114EUQ-13 ADC114EUQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 10000pcs.
Current gain: 30
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDC114EUQ-7-F DDC_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Pulsed collector current: 0.1A
Quantity in set/package: 3000pcs.
Current gain: 56
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDTC114ELP-7 ds30945.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 10...100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5929B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5929B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
184+0.39 EUR
210+0.34 EUR
329+0.22 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5921B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5921B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 799 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
237+0.3 EUR
291+0.25 EUR
321+0.22 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5922B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5922B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
226+0.32 EUR
397+0.18 EUR
532+0.13 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5952B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5952B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 130V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 130V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5948B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5948B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
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SBR0330CW-7 SBR0330CW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape
Mounting: SMD
Load current: 0.3A
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Features of semiconductor devices: small signal
Case: SOT323
Type of diode: switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DFLU1200-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF13ABCF2188745&compId=DFLU1200.pdf?ci_sign=1ea382f64970adb9e628efd713d2e31669b3d33b
DFLU1200-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; PowerDI®123; Ufmax: 0.98V
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 27pF
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: superfast switching
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
175+0.41 EUR
Mindestbestellmenge: 175
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DMN3042L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C970B7E97238BF&compId=DMN3042L.pdf?ci_sign=dc29de961bbfa8e5d871beaa03a4027b9ae91cc1
DMN3042L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 0.72W
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
288+0.25 EUR
338+0.21 EUR
500+0.14 EUR
582+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 218
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SMBJ90A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ90A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DDTC143XCA-7-F ds30330.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTC143XE-7-F ds30314.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTC143XUA-7-F ds30322.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMBJ18A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ18AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FZT491TA FZT491.pdf
FZT491TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 3W
Collector current: 1A
Collector-emitter voltage: 60V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
auf Bestellung 1003 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
93+0.77 EUR
175+0.41 EUR
186+0.39 EUR
500+0.37 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
DDZ9678-7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAFA2464FD0F5A0C7&compId=DDZ9689-7.pdf?ci_sign=05597935c68b55bc9ecc5af47c59eeca288462c8
DDZ9678-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
auf Bestellung 789 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
500+0.14 EUR
673+0.11 EUR
789+0.09 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
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