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BAT54LPQ-7 DIODES INCORPORATED BAT54LPQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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SB140-T DIODES INCORPORATED ds23022.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
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TT8M_HF DIODES INCORPORATED TT8M_LS.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 1500 Stücke:
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1500+0.22 EUR
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SB180-T DIODES INCORPORATED ds30116.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel; tape
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DMC4050SSDQ-13 DIODES INCORPORATED DMC4050SSDQ_Web.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Gate charge: 37.56/33.66nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN4008LFG-13 DIODES INCORPORATED DMN4008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
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DMN4008LFG-7 DIODES INCORPORATED DMN4008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
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DMT4008LFV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 70A
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DMTH4008LFDFW-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
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DMTH4008LPS-13 DIODES INCORPORATED DMTH4008LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
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DMTH4008LFDFWQ-13 DIODES INCORPORATED DMTH4008LFDFWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
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DMTH4008LFDFWQ-7 DIODES INCORPORATED DMTH4008LFDFWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
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DMTH4008LPSQ-13 DIODES INCORPORATED DMTH4008LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Application: automotive industry
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DMP4050SSDQ-13 DMP4050SSDQ-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1A38704F1F8BF&compId=DMP4050SSD.pdf?ci_sign=4349ede70acdcca9e2d1332e334f6cfdb2c63352 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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SMAJ54A-13-F SMAJ54A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3094 Stücke:
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264+0.27 EUR
382+0.19 EUR
779+0.092 EUR
903+0.079 EUR
955+0.075 EUR
1000+0.072 EUR
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ZXMHC10A07T8TA DIODES INCORPORATED ZXMHC10A07T8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
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DMG6602SVTQ-7 DMG6602SVTQ-7 DIODES INCORPORATED DMG6602SVTQ_Rev1-2_Dec2014.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2227 Stücke:
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136+0.53 EUR
210+0.34 EUR
293+0.24 EUR
338+0.21 EUR
625+0.11 EUR
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SMAZ12-13-F SMAZ12-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AFB86DDAF826E0C4&compId=SMAZx-13-F.pdf?ci_sign=b12d4006ba65a472eaab9a6f640870a647181c64 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Zener current: 83mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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313+0.23 EUR
365+0.2 EUR
463+0.15 EUR
521+0.14 EUR
782+0.092 EUR
834+0.086 EUR
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1SMB5927B-13 1SMB5927B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
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200+0.36 EUR
307+0.23 EUR
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AZ23C6V2-7-F AZ23C6V2-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 6.2V
Semiconductor structure: common anode; double
Type of diode: Zener
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455+0.16 EUR
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APX823-26W5G-7 APX823-26W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
auf Bestellung 3000 Stücke:
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186+0.39 EUR
234+0.31 EUR
261+0.27 EUR
304+0.24 EUR
410+0.17 EUR
435+0.16 EUR
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DDTB114EC-7-F DIODES INCORPORATED DDTB_XXXX_C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
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BZT52C13T-7 BZT52C13T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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848+0.084 EUR
1774+0.04 EUR
1825+0.039 EUR
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BZT52C13Q-7-F BZT52C13Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C13LP-7 DIODES INCORPORATED DS_31_BZT52C2V4LP-BZT52C39LP.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C13LPQ-7 DIODES INCORPORATED BZT52C6V8LPQ-BZT52C16LPQ.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Application: automotive industry
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BZT52C13TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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SMAJ10CA-13-F SMAJ10CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 4993 Stücke:
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250+0.29 EUR
305+0.23 EUR
410+0.17 EUR
596+0.12 EUR
794+0.09 EUR
848+0.084 EUR
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SMAJ10CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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ZVN4525E6TA ZVN4525E6TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B180CEA9C28000C4&compId=ZVN4525E6TA.pdf?ci_sign=7831f48c8344e2b8cc6c2283f41e2441730705f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Pulsed drain current: 1.44A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 242 Stücke:
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89+0.81 EUR
101+0.71 EUR
128+0.56 EUR
135+0.53 EUR
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DMN3023L-13 DMN3023L-13 DIODES INCORPORATED DMN3023L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 18.4nC
Pulsed drain current: 44A
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KBP06G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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BAT54LPQ-7 BAT54LPQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
Produkt ist nicht verfügbar
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SB140-T ds23022.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TT8M_HF TT8M_LS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+0.22 EUR
Mindestbestellmenge: 1500
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SB180-T ds30116.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMC4050SSDQ-13 DMC4050SSDQ_Web.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Gate charge: 37.56/33.66nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN4008LFG-13 DMN4008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Produkt ist nicht verfügbar
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DMN4008LFG-7 DMN4008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Produkt ist nicht verfügbar
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DMT4008LFV-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 70A
Produkt ist nicht verfügbar
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DMTH4008LFDFW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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DMTH4008LPS-13 DMTH4008LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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DMTH4008LFDFWQ-13 DMTH4008LFDFWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH4008LPSQ-13 DMTH4008LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP4050SSDQ-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1A38704F1F8BF&compId=DMP4050SSD.pdf?ci_sign=4349ede70acdcca9e2d1332e334f6cfdb2c63352
DMP4050SSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ54A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ54A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3094 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
382+0.19 EUR
779+0.092 EUR
903+0.079 EUR
955+0.075 EUR
1000+0.072 EUR
Mindestbestellmenge: 264
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ZXMHC10A07T8TA ZXMHC10A07T8.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
Produkt ist nicht verfügbar
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DMG6602SVTQ-7 DMG6602SVTQ_Rev1-2_Dec2014.pdf
DMG6602SVTQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
210+0.34 EUR
293+0.24 EUR
338+0.21 EUR
625+0.11 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
SMAZ12-13-F pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AFB86DDAF826E0C4&compId=SMAZx-13-F.pdf?ci_sign=b12d4006ba65a472eaab9a6f640870a647181c64
SMAZ12-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Zener current: 83mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 4840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
365+0.2 EUR
463+0.15 EUR
521+0.14 EUR
782+0.092 EUR
834+0.086 EUR
Mindestbestellmenge: 313
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1SMB5927B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5927B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
307+0.23 EUR
412+0.17 EUR
Mindestbestellmenge: 200
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AZ23C6V2-7-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8
AZ23C6V2-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 6.2V
Semiconductor structure: common anode; double
Type of diode: Zener
auf Bestellung 1050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
863+0.083 EUR
1050+0.069 EUR
Mindestbestellmenge: 455
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APX823-26W5G-7 APX823_824_825A.pdf
APX823-26W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
234+0.31 EUR
261+0.27 EUR
304+0.24 EUR
410+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 186
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DDTB114EC-7-F DDTB_XXXX_C.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BZT52C13T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C13T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 1854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
848+0.084 EUR
1774+0.04 EUR
1825+0.039 EUR
Mindestbestellmenge: 556
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BZT52C13Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C13Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C13LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C13LPQ-7 BZT52C6V8LPQ-BZT52C16LPQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C13TQ-7-F ds30502.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ10CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ10CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 4993 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
250+0.29 EUR
305+0.23 EUR
410+0.17 EUR
596+0.12 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 186
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SMAJ10CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
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ZVN4525E6TA pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B180CEA9C28000C4&compId=ZVN4525E6TA.pdf?ci_sign=7831f48c8344e2b8cc6c2283f41e2441730705f2
ZVN4525E6TA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Pulsed drain current: 1.44A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
89+0.81 EUR
101+0.71 EUR
128+0.56 EUR
135+0.53 EUR
Mindestbestellmenge: 61
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DMN3023L-13 DMN3023L.pdf
DMN3023L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 18.4nC
Pulsed drain current: 44A
Produkt ist nicht verfügbar
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KBP06G ds21203.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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