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ZVN2120GTA DIODES INCORPORATED ZVN2120G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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74AUP1G07FZ4-7 DIODES INCORPORATED 74AUP1G07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Number of inputs: 1
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74AHCT1G07QSE-7 DIODES INCORPORATED 74AHCT1G07Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; AND,configurable,OR; Ch: 1; IN: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AHCT
Kind of gate: AND; configurable; OR
Kind of input: with Schmitt trigger
Number of inputs: 1
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74AHCT1G07QW5-7 DIODES INCORPORATED 74AHCT1G07Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; AND,configurable,OR; Ch: 1; IN: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AHCT
Kind of gate: AND; configurable; OR
Kind of input: with Schmitt trigger
Number of inputs: 1
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ES2G-13-F DIODES INCORPORATED ds30212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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SMCJ14A-13-F SMCJ14A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 64.7A; unidirectional; SMC
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 14V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward impulse current: 64.7A
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 15.6...17.2V
Peak pulse power dissipation: 1.5kW
auf Bestellung 1609 Stücke:
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155+0.46 EUR
169+0.42 EUR
304+0.24 EUR
321+0.22 EUR
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MMSTA56-7-F MMSTA56-7-F DIODES INCORPORATED ds30167.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 500mA; 200mW; SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
Frequency: 50MHz
Collector-emitter voltage: 80V
Collector current: 0.5A
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3.0SMCJ24A-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1FD090BB741D84D880DF&compId=3.0SMCJxx.pdf?ci_sign=66b79dd9e6490985f47e629486c9d364f4777550 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMN2080UCB4-7 DIODES INCORPORATED DMN2080UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Case: X2-WLB0808-4
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 7.4nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 8A
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MMBTA05-7-F DIODES INCORPORATED MMBTA05_MMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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MMBTA05Q-13-F DIODES INCORPORATED MMBTA05_MMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Application: automotive industry
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ZTX649 DIODES INCORPORATED ZTX649.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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ZTX649STZ DIODES INCORPORATED ZTX649.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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DMN3053L-7 DMN3053L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C978F625B818BF&compId=DMN3053L.pdf?ci_sign=feb7beb4f5a3c0a1432a1d2c2ada7e4049275519 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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261+0.27 EUR
304+0.24 EUR
385+0.19 EUR
468+0.15 EUR
496+0.14 EUR
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74LV32AT14-13 74LV32AT14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC720D3&compId=74LV32A.pdf?ci_sign=cdfe4e0131113a32cff8240a7639b5896c8ff070 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LV
Kind of output: push-pull
Kind of input: with Schmitt trigger
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125+0.57 EUR
178+0.4 EUR
226+0.32 EUR
439+0.16 EUR
477+0.15 EUR
506+0.14 EUR
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74LVC32AS14-13 74LVC32AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E711516AD140D3&compId=74LVC32A.pdf?ci_sign=f98f9ce947c301d92bbd503098fc113acfd31611 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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148+0.49 EUR
207+0.35 EUR
256+0.28 EUR
477+0.15 EUR
603+0.12 EUR
633+0.11 EUR
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BZX84B5V1-7-F BZX84B5V1-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
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BZX84B5V1Q-7-F BZX84B5V1Q-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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AP2280-1WG-7 AP2280-1WG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP2280-2FMG-7 DIODES INCORPORATED AP2280.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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ZTX605 DIODES INCORPORATED ZTX604.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
auf Bestellung 3964 Stücke:
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125+0.57 EUR
149+0.48 EUR
158+0.45 EUR
1000+0.44 EUR
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SBRT15U100SP5-7 SBRT15U100SP5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EFA1E35626F6745&compId=SBRT15U100SP5.pdf?ci_sign=9c03364c16406e7d242ba6ddeb16737e65966d9b Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.7V
Max. forward impulse current: 250A
Kind of package: reel; tape
Technology: Trench SBR®
auf Bestellung 445 Stücke:
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82+0.88 EUR
123+0.58 EUR
130+0.55 EUR
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SBR10U200P5-13 SBR10U200P5-13 DIODES INCORPORATED SBR10U200P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 200V; 10A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.88V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 0.1mA
Technology: SBR®
auf Bestellung 4638 Stücke:
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67+1.07 EUR
74+0.97 EUR
98+0.74 EUR
103+0.69 EUR
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SDM1M40LP8-7 DIODES INCORPORATED SDM1M40LP8.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
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SDM1M40LP8Q-7 DIODES INCORPORATED SDM1M40LP8Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Application: automotive industry
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ZTX696B DIODES INCORPORATED ZTX696B.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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ZTX696BSTZ DIODES INCORPORATED ZTX696B.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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ZTX558 DIODES INCORPORATED ZTX558.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 50MHz
Produkt ist nicht verfügbar
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ZTX558STZ DIODES INCORPORATED ZTX558.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 50MHz
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FZT958TA FZT958TA DIODES INCORPORATED FZT958.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 1000 Stücke:
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71+1.02 EUR
87+0.83 EUR
171+0.42 EUR
180+0.4 EUR
1000+0.39 EUR
Mindestbestellmenge: 71
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DDC123JU-7-F DDC123JU-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799ACC38EB73A8749&compId=ddcxxxxU.pdf?ci_sign=ff368cbe4b22d6808dcf08512a4babbb0e526bab Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN x2
auf Bestellung 1059 Stücke:
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625+0.11 EUR
794+0.09 EUR
1059+0.067 EUR
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74AUP1G17FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8227C40D3&compId=74AUP1G17.pdf?ci_sign=76f5c209ad1949818e04841ad66e1dc4fa7232f5 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Technology: CMOS
Kind of integrated circuit: buffer
Family: AUP
Mounting: SMD
Case: X2-DFN1410-6
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMP610DL-7 DMP610DL-7 DIODES INCORPORATED DMP610DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Drain-source voltage: -60V
Drain current: -0.13A
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 560pC
Case: SOT23
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -1.2A
auf Bestellung 2500 Stücke:
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715+0.1 EUR
848+0.084 EUR
1042+0.069 EUR
1656+0.043 EUR
2137+0.033 EUR
2263+0.032 EUR
Mindestbestellmenge: 715
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DMP510DL-7 DMP510DL-7 DIODES INCORPORATED DMP510DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Drain-source voltage: -50V
Drain current: -0.13A
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Case: SOT23
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -1.2A
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250+0.29 EUR
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565+0.13 EUR
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BAT54V-7 BAT54V-7 DIODES INCORPORATED ds30560.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 30V; 0.2A; 5ns; reel,tape
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Leakage current: 2µA
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: double independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
auf Bestellung 3000 Stücke:
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807+0.089 EUR
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BAT40V-7 BAT40V-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E50C6249A22143&compId=BAT40V.pdf?ci_sign=c1bf0670d5ab0cfc6c55459ef92ffb130b696834 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 40V; 0.2A; 5ns; reel,tape
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 40V
Max. forward voltage: 0.33V
Load current: 0.2A
Semiconductor structure: double independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.75A
auf Bestellung 780 Stücke:
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SMCJ58CA-13-F SMCJ58CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 436 Stücke:
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336+0.21 EUR
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GBU808_HF DIODES INCORPORATED Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 7760 Stücke:
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SBR8U60P5-13 SBR8U60P5-13 DIODES INCORPORATED SBR8U60P5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Kind of package: reel; tape
auf Bestellung 3620 Stücke:
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76+0.95 EUR
161+0.44 EUR
171+0.42 EUR
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SBR8U60P5Q-13 DIODES INCORPORATED SBR8U60P5Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 60V; 8A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.1mA
Max. forward impulse current: 280A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP2303MTR-G1 AP2303MTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9AC3710132DB00CE&compId=AP2303.pdf?ci_sign=8c4bd4f4bda38fd849b2de36ba163c02588ec7ac Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 1.75A
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...85°C
Application: for DDR memories
Kind of package: reel; tape
Operating voltage: 1.2...5.5/3...5.5V DC
Output voltage: 0.6...3.3V
Produkt ist nicht verfügbar
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AP2303MPTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9AC3710132DB00CE&compId=AP2303.pdf?ci_sign=8c4bd4f4bda38fd849b2de36ba163c02588ec7ac Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 1.75A
Mounting: SMD
Case: PSOP8
Number of channels: 1
Operating temperature: -40...85°C
Application: for DDR memories
Kind of package: reel; tape
Operating voltage: 1.2...5.5/3...5.5V DC
Output voltage: 0.6...3.3V
Produkt ist nicht verfügbar
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B0520LWQ-7-F B0520LWQ-7-F DIODES INCORPORATED B0520LW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
Leakage current: 8mA
Application: automotive industry
Power dissipation: 0.41W
auf Bestellung 7328 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
407+0.18 EUR
730+0.098 EUR
1034+0.069 EUR
1095+0.065 EUR
3000+0.063 EUR
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BCX5316TC DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
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ZVN4206GVTA DIODES INCORPORATED ZVN4206GV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX84C3V0TS-7-F BZX84C3V0TS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED562773D52CA18&compId=BZX84CxxTS_SER.pdf?ci_sign=279795985b7b261799a4d5784b0bc07db2820585 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
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BZX84C3V0W-7-F BZX84C3V0W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBU25KH GBU25KH DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D5CD67E9880D2&compId=GBU25KH.pdf?ci_sign=3100c9a81cc8d184260435435b8cdf888107918e Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Load current: 25A
Max. forward impulse current: 350A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: GBU
Leads: flat pin
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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FZT751QTA DIODES INCORPORATED FZT751Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Application: automotive industry
Pulsed collector current: 6A
Current gain: 40...300
Frequency: 100...140MHz
Produkt ist nicht verfügbar
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DMN3300U-7 DIODES INCORPORATED ds31181.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 8A
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.6A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMN3300UQ-7 DMN3300UQ-7 DIODES INCORPORATED DMN3300UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 8A
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.6A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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AP2202R-3.3TRE1 AP2202R-3.3TRE1 DIODES INCORPORATED AP2202.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT89; SMD
Manufacturer series: AP2202
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 2.5...13.2V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Tolerance: ±1%
Output voltage: 3.3V
Output current: 0.15A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Produkt ist nicht verfügbar
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BCV47TC DIODES INCORPORATED bcv27%2C47.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
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ZXM61P02FTA ZXM61P02FTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C35493BDBFC749&compId=ZXM61P02F.pdf?ci_sign=814b34e582b88c406996cb3999105ce2ce23f96d description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2152 Stücke:
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200+0.36 EUR
281+0.25 EUR
363+0.2 EUR
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DMN2004K-7 DMN2004K-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F976E61C49E748&compId=DMN2004K.pdf?ci_sign=82eaae16cd30e837359bc5999ad3bf63810b124a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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162+0.44 EUR
205+0.34 EUR
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DMN2046U-13 DMN2046U-13 DIODES INCORPORATED DMN2046U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 20V
Drain current: 2.7A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1.26W
Polarisation: unipolar
Gate charge: 3.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 18A
Produkt ist nicht verfügbar
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ZXMP10A18GTA ZXMP10A18GTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EDAF654EC2E4143&compId=ZXMP10A18G.pdf?ci_sign=aa43785d816a4df446909fad6c1fcfffc418b4a2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 53 Stücke:
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34+2.16 EUR
40+1.82 EUR
50+1.43 EUR
53+1.34 EUR
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ZXMN10A25GTA ZXMN10A25GTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBD5FAD5E4B8BF&compId=ZXMN10A25G.pdf?ci_sign=00b5065226aef5e91d8bd1651effe8e0dfe9b24a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1009 Stücke:
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57+1.26 EUR
64+1.13 EUR
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 57
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TB1500L-13-F DIODES INCORPORATED ds30359.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 140V; SMB; SMD; reel,tape; 30A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 140V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Breakover voltage: 180V
Produkt ist nicht verfügbar
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TB1500H-13-F DIODES INCORPORATED ds30360.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 140V; SMB; SMD; reel,tape; 100A; UBO: 180V
Type of thyristor: TSS
Max. off-state voltage: 140V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 180V
Produkt ist nicht verfügbar
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ZVN2120GTA ZVN2120G.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74AUP1G07FZ4-7 74AUP1G07.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
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74AHCT1G07QSE-7 74AHCT1G07Q.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; AND,configurable,OR; Ch: 1; IN: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AHCT
Kind of gate: AND; configurable; OR
Kind of input: with Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
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74AHCT1G07QW5-7 74AHCT1G07Q.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; AND,configurable,OR; Ch: 1; IN: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AHCT
Kind of gate: AND; configurable; OR
Kind of input: with Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
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ES2G-13-F ds30212.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ14A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ14A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 64.7A; unidirectional; SMC
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 14V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward impulse current: 64.7A
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 15.6...17.2V
Peak pulse power dissipation: 1.5kW
auf Bestellung 1609 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
155+0.46 EUR
169+0.42 EUR
304+0.24 EUR
321+0.22 EUR
Mindestbestellmenge: 100
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MMSTA56-7-F ds30167.pdf
MMSTA56-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 500mA; 200mW; SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
Frequency: 50MHz
Collector-emitter voltage: 80V
Collector current: 0.5A
Produkt ist nicht verfügbar
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3.0SMCJ24A-13 pVersion=0046&contRep=ZT&docId=005056AB281E1FD090BB741D84D880DF&compId=3.0SMCJxx.pdf?ci_sign=66b79dd9e6490985f47e629486c9d364f4777550
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMN2080UCB4-7 DMN2080UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Case: X2-WLB0808-4
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 7.4nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 8A
Produkt ist nicht verfügbar
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MMBTA05-7-F MMBTA05_MMBTA06.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Produkt ist nicht verfügbar
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MMBTA05Q-13-F MMBTA05_MMBTA06.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Application: automotive industry
Produkt ist nicht verfügbar
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ZTX649 ZTX649.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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ZTX649STZ ZTX649.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN3053L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C978F625B818BF&compId=DMN3053L.pdf?ci_sign=feb7beb4f5a3c0a1432a1d2c2ada7e4049275519
DMN3053L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1098 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
261+0.27 EUR
304+0.24 EUR
385+0.19 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
74LV32AT14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC720D3&compId=74LV32A.pdf?ci_sign=cdfe4e0131113a32cff8240a7639b5896c8ff070
74LV32AT14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LV
Kind of output: push-pull
Kind of input: with Schmitt trigger
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
178+0.4 EUR
226+0.32 EUR
439+0.16 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
74LVC32AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E711516AD140D3&compId=74LVC32A.pdf?ci_sign=f98f9ce947c301d92bbd503098fc113acfd31611
74LVC32AS14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
auf Bestellung 2164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
207+0.35 EUR
256+0.28 EUR
477+0.15 EUR
603+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B5V1-7-F BZX84Bxxx.pdf
BZX84B5V1-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Produkt ist nicht verfügbar
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BZX84B5V1Q-7-F BZX84Bxxx.pdf
BZX84B5V1Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP2280-1WG-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47
AP2280-1WG-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP2280-2FMG-7 AP2280.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Produkt ist nicht verfügbar
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ZTX605 ZTX604.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
auf Bestellung 3964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
149+0.48 EUR
158+0.45 EUR
1000+0.44 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
SBRT15U100SP5-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EFA1E35626F6745&compId=SBRT15U100SP5.pdf?ci_sign=9c03364c16406e7d242ba6ddeb16737e65966d9b
SBRT15U100SP5-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.7V
Max. forward impulse current: 250A
Kind of package: reel; tape
Technology: Trench SBR®
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
82+0.88 EUR
123+0.58 EUR
130+0.55 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
SBR10U200P5-13 SBR10U200P5.pdf
SBR10U200P5-13
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 200V; 10A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.88V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 0.1mA
Technology: SBR®
auf Bestellung 4638 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
74+0.97 EUR
98+0.74 EUR
103+0.69 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SDM1M40LP8-7 SDM1M40LP8.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDM1M40LP8Q-7 SDM1M40LP8Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ZTX696B ZTX696B.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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ZTX696BSTZ ZTX696B.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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ZTX558 ZTX558.pdf
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZTX558STZ ZTX558.pdf
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
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FZT958TA FZT958.pdf
FZT958TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
87+0.83 EUR
171+0.42 EUR
180+0.4 EUR
1000+0.39 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
DDC123JU-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE799ACC38EB73A8749&compId=ddcxxxxU.pdf?ci_sign=ff368cbe4b22d6808dcf08512a4babbb0e526bab
DDC123JU-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN x2
auf Bestellung 1059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
410+0.17 EUR
625+0.11 EUR
794+0.09 EUR
1059+0.067 EUR
Mindestbestellmenge: 410
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G17FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8227C40D3&compId=74AUP1G17.pdf?ci_sign=76f5c209ad1949818e04841ad66e1dc4fa7232f5
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Technology: CMOS
Kind of integrated circuit: buffer
Family: AUP
Mounting: SMD
Case: X2-DFN1410-6
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP610DL-7 DMP610DL.pdf
DMP610DL-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Drain-source voltage: -60V
Drain current: -0.13A
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 560pC
Case: SOT23
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -1.2A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
848+0.084 EUR
1042+0.069 EUR
1656+0.043 EUR
2137+0.033 EUR
2263+0.032 EUR
Mindestbestellmenge: 715
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DMP510DL-7 DMP510DL.pdf
DMP510DL-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Drain-source voltage: -50V
Drain current: -0.13A
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Case: SOT23
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -1.2A
auf Bestellung 1321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
407+0.18 EUR
565+0.13 EUR
646+0.11 EUR
1191+0.06 EUR
1260+0.057 EUR
Mindestbestellmenge: 250
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BAT54V-7 ds30560.pdf
BAT54V-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 30V; 0.2A; 5ns; reel,tape
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Leakage current: 2µA
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: double independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
605+0.12 EUR
807+0.089 EUR
969+0.074 EUR
1049+0.068 EUR
Mindestbestellmenge: 605
Im Einkaufswagen  Stück im Wert von  UAH
BAT40V-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E50C6249A22143&compId=BAT40V.pdf?ci_sign=c1bf0670d5ab0cfc6c55459ef92ffb130b696834
BAT40V-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 40V; 0.2A; 5ns; reel,tape
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 40V
Max. forward voltage: 0.33V
Load current: 0.2A
Semiconductor structure: double independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.75A
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
407+0.18 EUR
599+0.12 EUR
780+0.092 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ58CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ58CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
155+0.46 EUR
319+0.22 EUR
336+0.21 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
GBU808_HF
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 7760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.3 EUR
Mindestbestellmenge: 240
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SBR8U60P5-13 SBR8U60P5.pdf
SBR8U60P5-13
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Kind of package: reel; tape
auf Bestellung 3620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
76+0.95 EUR
161+0.44 EUR
171+0.42 EUR
Mindestbestellmenge: 53
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SBR8U60P5Q-13 SBR8U60P5Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 60V; 8A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.1mA
Max. forward impulse current: 280A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP2303MTR-G1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9AC3710132DB00CE&compId=AP2303.pdf?ci_sign=8c4bd4f4bda38fd849b2de36ba163c02588ec7ac
AP2303MTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 1.75A
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...85°C
Application: for DDR memories
Kind of package: reel; tape
Operating voltage: 1.2...5.5/3...5.5V DC
Output voltage: 0.6...3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP2303MPTR-G1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9AC3710132DB00CE&compId=AP2303.pdf?ci_sign=8c4bd4f4bda38fd849b2de36ba163c02588ec7ac
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 1.75A
Mounting: SMD
Case: PSOP8
Number of channels: 1
Operating temperature: -40...85°C
Application: for DDR memories
Kind of package: reel; tape
Operating voltage: 1.2...5.5/3...5.5V DC
Output voltage: 0.6...3.3V
Produkt ist nicht verfügbar
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B0520LWQ-7-F B0520LW.pdf
B0520LWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
Leakage current: 8mA
Application: automotive industry
Power dissipation: 0.41W
auf Bestellung 7328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
407+0.18 EUR
730+0.098 EUR
1034+0.069 EUR
1095+0.065 EUR
3000+0.063 EUR
Mindestbestellmenge: 278
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BCX5316TC
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
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ZVN4206GVTA ZVN4206GV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX84C3V0TS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED562773D52CA18&compId=BZX84CxxTS_SER.pdf?ci_sign=279795985b7b261799a4d5784b0bc07db2820585
BZX84C3V0TS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
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BZX84C3V0W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C3V0W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBU25KH pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D5CD67E9880D2&compId=GBU25KH.pdf?ci_sign=3100c9a81cc8d184260435435b8cdf888107918e
GBU25KH
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Load current: 25A
Max. forward impulse current: 350A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: GBU
Leads: flat pin
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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FZT751QTA FZT751Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Application: automotive industry
Pulsed collector current: 6A
Current gain: 40...300
Frequency: 100...140MHz
Produkt ist nicht verfügbar
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DMN3300U-7 ds31181.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 8A
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.6A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMN3300UQ-7 DMN3300UQ.pdf
DMN3300UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 8A
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.6A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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AP2202R-3.3TRE1 AP2202.pdf
AP2202R-3.3TRE1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT89; SMD
Manufacturer series: AP2202
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 2.5...13.2V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Tolerance: ±1%
Output voltage: 3.3V
Output current: 0.15A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Produkt ist nicht verfügbar
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BCV47TC bcv27%2C47.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 500mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
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ZXM61P02FTA description pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C35493BDBFC749&compId=ZXM61P02F.pdf?ci_sign=814b34e582b88c406996cb3999105ce2ce23f96d
ZXM61P02FTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
281+0.25 EUR
363+0.2 EUR
Mindestbestellmenge: 200
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DMN2004K-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F976E61C49E748&compId=DMN2004K.pdf?ci_sign=82eaae16cd30e837359bc5999ad3bf63810b124a
DMN2004K-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
205+0.34 EUR
Mindestbestellmenge: 162
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DMN2046U-13 DMN2046U.pdf
DMN2046U-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 20V
Drain current: 2.7A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1.26W
Polarisation: unipolar
Gate charge: 3.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 18A
Produkt ist nicht verfügbar
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ZXMP10A18GTA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EDAF654EC2E4143&compId=ZXMP10A18G.pdf?ci_sign=aa43785d816a4df446909fad6c1fcfffc418b4a2
ZXMP10A18GTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
40+1.82 EUR
50+1.43 EUR
53+1.34 EUR
Mindestbestellmenge: 34
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ZXMN10A25GTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBD5FAD5E4B8BF&compId=ZXMN10A25G.pdf?ci_sign=00b5065226aef5e91d8bd1651effe8e0dfe9b24a
ZXMN10A25GTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1009 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
64+1.13 EUR
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 57
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TB1500L-13-F ds30359.pdf
Hersteller: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 140V; SMB; SMD; reel,tape; 30A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 140V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Breakover voltage: 180V
Produkt ist nicht verfügbar
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TB1500H-13-F ds30360.pdf
Hersteller: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 140V; SMB; SMD; reel,tape; 100A; UBO: 180V
Type of thyristor: TSS
Max. off-state voltage: 140V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 180V
Produkt ist nicht verfügbar
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