Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79399) > Seite 1319 nach 1324
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DCX123JU-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Case: SOT363 Mounting: SMD Frequency: 250MHz Kind of package: reel; tape Collector current: 0.1A Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP |
auf Bestellung 1133 Stücke: Lieferzeit 14-21 Tag (e) |
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AZ23C36-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Zener voltage: 36V Semiconductor structure: common anode; double Type of diode: Zener |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3415UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
auf Bestellung 1092 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3415UFY4Q-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -16V Drain current: -2.2A Power dissipation: 1.35W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 10nC Pulsed drain current: -12A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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VN10LFTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1440 Stücke: Lieferzeit 14-21 Tag (e) |
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VN10LP | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; 0.625W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 1223 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3418L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.4W Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Gate-source voltage: ±12V Drain-source voltage: 30V Kind of channel: enhancement On-state resistance: 70mΩ Drain current: 3.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMG3418L-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.9W Case: SOT23 Mounting: SMD Kind of package: 13 inch reel; tape Gate-source voltage: ±12V Pulsed drain current: 15A Drain-source voltage: 30V Kind of channel: enhancement Gate charge: 5.5nC On-state resistance: 0.15Ω Drain current: 3.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
74LV06AS14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: LV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
74LV06AT14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: LV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DDTC123JE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DDTC123JLP-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 50...180 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DDTC123JUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DDTC124EE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DDTC124EUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DDTC124EUAQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Application: automotive industry Current gain: 56 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
DDTC124TCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Current gain: 100...600 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DDTC124TE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Current gain: 100...600 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DDTC124TEQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Application: automotive industry Current gain: 100...600 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PAM2312AABADJ | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz Frequency: 1.5MHz Operating temperature: -40...85°C Mounting: SMD Kind of package: reel; tape Output current: 1A Input voltage: 2.5...5.5V DC Efficiency: 96% Topology: buck Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TSOT25 |
auf Bestellung 8801 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXT10N50DE6TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ10A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ10CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ100CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
SMBJ100CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ZXTN5551FLTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTN5551GTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTN5551ZTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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DT1140-04LPQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array Type of diode: TVS array |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AC817-40Q-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 310mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed collector current: 1A Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ZXSC300E5TA | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2016UFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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B340AX-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G04QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7315DQ-11W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.15A; SOT25; SMD Tolerance: ±1% Output voltage: 1.1V Input voltage: 1.7...5.25V Type of integrated circuit: voltage regulator Application: automotive industry Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Integrated circuit features: output discharge; shutdown mode control input Mounting: SMD Case: SOT25 Manufacturer series: AP7315Q Operating temperature: -40...125°C Output current: 0.15A Voltage drop: 0.32V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
74LVC1G00QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SD03C-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape; ESD Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 3.3V Breakdown voltage: 4V Max. forward impulse current: 55A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Kind of package: reel; tape Capacitance: 150pF Version: ESD |
auf Bestellung 1579 Stücke: Lieferzeit 14-21 Tag (e) |
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SBR10200CTL-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; SBR®; SMD; 200V; 10A Type of diode: Schottky rectifying Case: TO252/DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.94V Max. forward impulse current: 110A Kind of package: reel; tape Technology: SBR® |
Produkt ist nicht verfügbar |
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MBR10200CT-G1 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: tube Leakage current: 15mA |
Produkt ist nicht verfügbar |
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SBR10200CTB-13-G | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 5Ax2; 20ns; D2PAK; SBR®; reel,tape Type of diode: rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Technology: SBR® Reverse recovery time: 20ns Max. load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SBR10200CTB | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 5Ax2; 20ns; D2PAK; SBR®; tube Type of diode: rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Kind of package: tube Technology: SBR® Reverse recovery time: 20ns Max. load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SBR10200CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Case: ITO220AB Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Kind of package: tube Technology: SBR® Max. load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MBRD10200CT-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 200V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252/DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.91V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ZXLD1360QET5TA | DIODES INCORPORATED |
![]() Description: ZXLD1360QET5TA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431BQFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431AQE5TA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7311-33WG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Case: SOT25 Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output current: 0.15A Voltage drop: 0.3V Number of channels: 1 Tolerance: ±2% Input voltage: 2...6V Output voltage: 3.3V Manufacturer series: AP7311 |
Produkt ist nicht verfügbar |
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BZT52C2V0S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 2V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2V Mounting: SMD Tolerance: ±4.5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
auf Bestellung 3435 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT595T16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 8bit; parallel out; serial input; shift register Kind of output: 3-state Family: HCT Technology: CMOS; TTL Case: TSSOP16 Type of integrated circuit: digital Mounting: SMD Kind of input: with Schmitt trigger Number of channels: 8 |
auf Bestellung 2211 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT4401Q-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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FL2400022 | DIODES INCORPORATED |
![]() Description: Resonator: quartz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMHT10H032LFJ-13 | DIODES INCORPORATED |
![]() Description: DMHT10H032LFJ-13 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84WQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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ULN62003AS16-13 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZLLS2000QTA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54AWQ-13-F | DIODES INCORPORATED |
![]() Description: BAT54AWQ-13-F |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ120CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 3.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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PAM2306AYPKE | DIODES INCORPORATED |
![]() Description: IC: PMIC Type of integrated circuit: PMIC |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SBR02U100LPQ-7B | DIODES INCORPORATED |
![]() Description: Diode: switching Type of diode: switching |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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AL9910AS-13 | DIODES INCORPORATED |
![]() Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO8 Number of channels: 1 Mounting: SMD Operating voltage: 10V DC Integrated circuit features: linear dimming; PWM |
auf Bestellung 1706 Stücke: Lieferzeit 14-21 Tag (e) |
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DCX123JU-7-F |
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Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
auf Bestellung 1133 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
439+ | 0.16 EUR |
506+ | 0.14 EUR |
771+ | 0.093 EUR |
1133+ | 0.063 EUR |
AZ23C36-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 36V
Semiconductor structure: common anode; double
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 36V
Semiconductor structure: common anode; double
Type of diode: Zener
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
374+ | 0.19 EUR |
428+ | 0.17 EUR |
735+ | 0.097 EUR |
1397+ | 0.051 EUR |
1475+ | 0.048 EUR |
DMG3415UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
auf Bestellung 1092 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
143+ | 0.5 EUR |
160+ | 0.45 EUR |
241+ | 0.3 EUR |
463+ | 0.15 EUR |
DMG3415UFY4Q-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -2.2A
Power dissipation: 1.35W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 10nC
Pulsed drain current: -12A
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -2.2A
Power dissipation: 1.35W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 10nC
Pulsed drain current: -12A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VN10LFTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
134+ | 0.54 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
VN10LP |
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Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 1223 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
84+ | 0.86 EUR |
157+ | 0.46 EUR |
167+ | 0.43 EUR |
DMG3418L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of channel: enhancement
On-state resistance: 70mΩ
Drain current: 3.1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of channel: enhancement
On-state resistance: 70mΩ
Drain current: 3.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG3418L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.9W
Case: SOT23
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Kind of channel: enhancement
Gate charge: 5.5nC
On-state resistance: 0.15Ω
Drain current: 3.1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.9W
Case: SOT23
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Kind of channel: enhancement
Gate charge: 5.5nC
On-state resistance: 0.15Ω
Drain current: 3.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LV06AS14-13 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: LV
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: LV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LV06AT14-13 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: LV
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: LV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC123JE-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC123JLP-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 50...180
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 50...180
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC123JUA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124EE-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124EUA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124EUAQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124TCA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124TE-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC124TEQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Current gain: 100...600
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Current gain: 100...600
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PAM2312AABADJ |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Frequency: 1.5MHz
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Topology: buck
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TSOT25
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Frequency: 1.5MHz
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Topology: buck
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TSOT25
auf Bestellung 8801 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
178+ | 0.4 EUR |
200+ | 0.36 EUR |
232+ | 0.31 EUR |
254+ | 0.28 EUR |
358+ | 0.2 EUR |
376+ | 0.19 EUR |
ZXT10N50DE6TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.35 EUR |
SMBJ10A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.52 EUR |
SMBJ10CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
266+ | 0.27 EUR |
371+ | 0.19 EUR |
SMBJ100CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
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SMBJ100CAQ-13-F |
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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ZXTN5551FLTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.096 EUR |
ZXTN5551GTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.24 EUR |
ZXTN5551ZTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.2 EUR |
DT1140-04LPQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.13 EUR |
AC817-40Q-7 |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXSC300E5TA |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.39 EUR |
DMP2016UFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.21 EUR |
B340AX-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.062 EUR |
74LVC1G04QSE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.097 EUR |
AP7315DQ-11W5-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.15A; SOT25; SMD
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.7...5.25V
Type of integrated circuit: voltage regulator
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: output discharge; shutdown mode control input
Mounting: SMD
Case: SOT25
Manufacturer series: AP7315Q
Operating temperature: -40...125°C
Output current: 0.15A
Voltage drop: 0.32V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.15A; SOT25; SMD
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.7...5.25V
Type of integrated circuit: voltage regulator
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: output discharge; shutdown mode control input
Mounting: SMD
Case: SOT25
Manufacturer series: AP7315Q
Operating temperature: -40...125°C
Output current: 0.15A
Voltage drop: 0.32V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G00QSE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.097 EUR |
SD03C-7 |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 55A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Capacitance: 150pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 55A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Capacitance: 150pF
Version: ESD
auf Bestellung 1579 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
424+ | 0.17 EUR |
481+ | 0.15 EUR |
695+ | 0.1 EUR |
820+ | 0.087 EUR |
981+ | 0.073 EUR |
1042+ | 0.069 EUR |
SBR10200CTL-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SBR®; SMD; 200V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.94V
Max. forward impulse current: 110A
Kind of package: reel; tape
Technology: SBR®
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SBR®; SMD; 200V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.94V
Max. forward impulse current: 110A
Kind of package: reel; tape
Technology: SBR®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR10200CT-G1 |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 15mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 15mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR10200CTB-13-G |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 20ns; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Reverse recovery time: 20ns
Max. load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 20ns; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Reverse recovery time: 20ns
Max. load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR10200CTB |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 20ns; D2PAK; SBR®; tube
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Reverse recovery time: 20ns
Max. load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 20ns; D2PAK; SBR®; tube
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Reverse recovery time: 20ns
Max. load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR10200CTFP |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Max. load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBRD10200CT-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 200V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 200V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXLD1360QET5TA |
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Hersteller: DIODES INCORPORATED
Category: Integrated circuits - Unclassified
Description: ZXLD1360QET5TA
Category: Integrated circuits - Unclassified
Description: ZXLD1360QET5TA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 2.35 EUR |
TLV431BQFTA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.23 EUR |
TLV431AQE5TA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.25 EUR |
AP7311-33WG-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Case: SOT25
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 3.3V
Manufacturer series: AP7311
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Case: SOT25
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 3.3V
Manufacturer series: AP7311
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZT52C2V0S-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±4.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±4.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 3435 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
511+ | 0.14 EUR |
575+ | 0.12 EUR |
658+ | 0.11 EUR |
949+ | 0.075 EUR |
1359+ | 0.053 EUR |
2591+ | 0.028 EUR |
2748+ | 0.026 EUR |
74HCT595T16-13 |
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Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Kind of output: 3-state
Family: HCT
Technology: CMOS; TTL
Case: TSSOP16
Type of integrated circuit: digital
Mounting: SMD
Kind of input: with Schmitt trigger
Number of channels: 8
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Kind of output: 3-state
Family: HCT
Technology: CMOS; TTL
Case: TSSOP16
Type of integrated circuit: digital
Mounting: SMD
Kind of input: with Schmitt trigger
Number of channels: 8
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
166+ | 0.43 EUR |
187+ | 0.38 EUR |
217+ | 0.33 EUR |
338+ | 0.21 EUR |
360+ | 0.2 EUR |
MMBT4401Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.034 EUR |
FL2400022 |
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Hersteller: DIODES INCORPORATED
Category: SMD ceramic filters and resonators
Description: Resonator: quartz
Category: SMD ceramic filters and resonators
Description: Resonator: quartz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMHT10H032LFJ-13 |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.82 EUR |
BSS84WQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.045 EUR |
ULN62003AS16-13 |
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Hersteller: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.4 EUR |
ZLLS2000QTA |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.46 EUR |
BAT54AWQ-13-F |
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auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.051 EUR |
SMBJ120CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2860 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
465+ | 0.15 EUR |
520+ | 0.14 EUR |
585+ | 0.12 EUR |
625+ | 0.11 EUR |
PAM2306AYPKE |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.26 EUR |
SBR02U100LPQ-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.22 EUR |
AL9910AS-13 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Mounting: SMD
Operating voltage: 10V DC
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Mounting: SMD
Operating voltage: 10V DC
Integrated circuit features: linear dimming; PWM
auf Bestellung 1706 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
50+ | 1.43 EUR |
57+ | 1.27 EUR |
65+ | 1.12 EUR |
68+ | 1.06 EUR |
69+ | 1.04 EUR |
100+ | 1.02 EUR |