Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79578) > Seite 1319 nach 1327
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AP7363-10D-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1V; 1.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.24V Output voltage: 1V Output current: 1.5A Case: DPAK Mounting: SMD Manufacturer series: AP7363 Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 2.2...5.5V |
Produkt ist nicht verfügbar |
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SMAJ15CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
auf Bestellung 26976 Stücke: Lieferzeit 14-21 Tag (e) |
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DFLS1100-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Capacitance: 36pF Max. forward voltage: 0.77V Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 9305 Stücke: Lieferzeit 14-21 Tag (e) |
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B160-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 110pF |
auf Bestellung 9626 Stücke: Lieferzeit 14-21 Tag (e) |
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B350A-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 80A Kind of package: reel; tape Power dissipation: 0.85W Capacitance: 200pF |
auf Bestellung 5309 Stücke: Lieferzeit 14-21 Tag (e) |
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B350AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW Type of diode: Schottky rectifying Max. off-state voltage: 50V Max. forward impulse current: 80A Semiconductor structure: single diode Case: SMA Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Capacitance: 200pF Load current: 3A Max. forward voltage: 0.7V Application: automotive industry Power dissipation: 0.85W |
Produkt ist nicht verfügbar |
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B350AF-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Max. forward impulse current: 80A Semiconductor structure: single diode Case: SMA flat Mounting: SMD Leakage current: 24mA Kind of package: reel; tape Capacitance: 110pF Load current: 3A Max. forward voltage: 0.65V |
Produkt ist nicht verfügbar |
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ZVN2110GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 958 Stücke: Lieferzeit 14-21 Tag (e) |
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BC807-25W-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A Quantity in set/package: 3000pcs. |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ22AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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P6SMAJ22ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS20-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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BAS20DWQ-13 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: double independent Case: SOT363 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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BAS20DW-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.625A Reverse recovery time: 50ns Semiconductor structure: double independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAS20Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.625A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAS20W-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT323 Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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SMBJ22CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ22A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
SMBJ22CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SMBJ22AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7332-1218FM-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,1.8V; 0.3A; SOT26 Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT26 Operating temperature: -40...85°C Output current: 0.3A Voltage drop: 0.6V Number of channels: 2 Tolerance: ±2% Output voltage: 1.2V; 1.8V Input voltage: 2...6V Type of integrated circuit: voltage regulator Manufacturer series: AP7332 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
AP7332-3333W6-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT26; SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT26 Operating temperature: -40...85°C Output current: 0.3A Voltage drop: 0.6V Number of channels: 2 Tolerance: ±2% Output voltage: 3.3V Input voltage: 2...6V Type of integrated circuit: voltage regulator Manufacturer series: AP7332 |
Produkt ist nicht verfügbar |
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BCX5616QTC | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C5V6Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener Type of diode: Zener |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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D5V0L1B2S9-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; bidirectional; SOD923; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: bidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape |
auf Bestellung 5082 Stücke: Lieferzeit 14-21 Tag (e) |
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B340Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Capacitance: 200pF Leakage current: 20mA Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Application: automotive industry Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
B340BQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Capacitance: 200pF Leakage current: 20mA Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Application: automotive industry Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
B340CE-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Capacitance: 140pF Leakage current: 30mA Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
74AHC594T16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Mounting: SMD Case: TSSOP16 Family: AHC Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Operating temperature: -40...150°C Number of channels: 8 Supply voltage: 2...5.5V DC Technology: CMOS |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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B150-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Case: SMA Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
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AL5887JAZW52-13 | DIODES INCORPORATED |
![]() Description: IC: driver; LED driver; I2C,SPI; WQFN52; 70mA; Ch: 36; 2.7÷5.5VDC Interface: I2C; SPI Case: WQFN52 Type of integrated circuit: driver Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output current: 70mA Number of channels: 36 Operating voltage: 2.7...5.5V DC Kind of integrated circuit: LED driver |
Produkt ist nicht verfügbar |
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BZX84B3V0Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 3V; SMD; reel,tape; SOT23; single diode Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.35W Tolerance: ±2% Zener voltage: 3V Application: automotive industry Semiconductor structure: single diode |
auf Bestellung 1760 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84B16Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.35W Tolerance: ±2% Zener voltage: 16V Application: automotive industry Semiconductor structure: single diode |
auf Bestellung 1180 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1004UFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD Case: PowerDI®3333-8 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 5.1mΩ Power dissipation: 0.9W Gate-source voltage: ±8V Drain current: 55A Drain-source voltage: 12V Kind of package: 7 inch reel; tape |
auf Bestellung 836 Stücke: Lieferzeit 14-21 Tag (e) |
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FMMT718TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1.5A Power dissipation: 0.625W Case: SOT23 Pulsed collector current: 6A Current gain: 15...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
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DESD1CAN2SOQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 25.4V; SOT23; Ch: 2; reel,tape Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: TVS array Capacitance: 17pF Leakage current: 50nA Number of channels: 2 Max. off-state voltage: 24V Breakdown voltage: 25.4V |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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DESD1CAN2WQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 25.4V; SOT323; Ch: 2; reel,tape Kind of package: reel; tape Case: SOT323 Mounting: SMD Type of diode: TVS array Capacitance: 12pF Number of channels: 2 Max. off-state voltage: 24V Breakdown voltage: 25.4V |
Produkt ist nicht verfügbar |
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DMP3036SFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: -30V Gate charge: 16.5nC On-state resistance: 29mΩ Power dissipation: 2.3W Drain current: -7A Pulsed drain current: -80A Gate-source voltage: ±25V Kind of channel: enhancement |
auf Bestellung 1979 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3024SFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 8.5A Gate charge: 10.5nC On-state resistance: 33mΩ Power dissipation: 1.4W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement |
auf Bestellung 2348 Stücke: Lieferzeit 14-21 Tag (e) |
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DXTP03100BFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 5A; PowerDI®3333-8 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Case: PowerDI®3333-8 Current gain: 5...300 Mounting: SMD Quantity in set/package: 2000pcs. Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
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DXTP03060BFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5.5A Case: PowerDI®3333-8 Current gain: 10...300 Mounting: SMD Quantity in set/package: 2000pcs. Kind of package: reel; tape Frequency: 120MHz |
Produkt ist nicht verfügbar |
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DXTP03060CFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5.5A Case: PowerDI®3333-8 Current gain: 45...800 Mounting: SMD Quantity in set/package: 2000pcs. Kind of package: reel; tape Frequency: 120MHz |
Produkt ist nicht verfügbar |
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DMP3036SFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: -30V On-state resistance: 29mΩ Power dissipation: 0.9W Drain current: -30A Gate-source voltage: ±25V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMT8012LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 80V On-state resistance: 22mΩ Power dissipation: 2.2W Drain current: 30A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DXTN07045DFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 900mW; PowerDI®3333-8 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 3A Case: PowerDI®3333-8 Mounting: SMD Quantity in set/package: 2000pcs. Kind of package: reel; tape Power dissipation: 0.9W Pulsed collector current: 6A |
Produkt ist nicht verfügbar |
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DXTN07060BFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Case: PowerDI®3333-8 Mounting: SMD Quantity in set/package: 2000pcs. Kind of package: reel; tape Power dissipation: 0.9W Pulsed collector current: 6A |
Produkt ist nicht verfügbar |
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DXTN07100BFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 900mW; PowerDI®3333-8 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Case: PowerDI®3333-8 Mounting: SMD Quantity in set/package: 2000pcs. Kind of package: reel; tape Power dissipation: 0.9W Pulsed collector current: 6A |
Produkt ist nicht verfügbar |
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DMN10H170SFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 100V On-state resistance: 0.133Ω Power dissipation: 1.3W Drain current: 2.7A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMN3009LFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 30V Gate charge: 42nC On-state resistance: 9mΩ Power dissipation: 2W Drain current: 50A Pulsed drain current: 90A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMN3009LFVW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 30V Gate charge: 42nC On-state resistance: 7.4mΩ Power dissipation: 2W Drain current: 48A Pulsed drain current: 90A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMN3009LFVWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 30V Gate charge: 42nC On-state resistance: 7.4mΩ Power dissipation: 2W Drain current: 48A Pulsed drain current: 90A Gate-source voltage: ±20V Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMN6017SFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 60V Gate charge: 55nC On-state resistance: 20mΩ Power dissipation: 2W Drain current: 28A Pulsed drain current: 140A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMT10H009LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 100V Gate charge: 41nC On-state resistance: 12.5mΩ Power dissipation: 2W Drain current: 11A Pulsed drain current: 200A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMT10H015LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 100V Gate charge: 33.3nC On-state resistance: 23.5mΩ Power dissipation: 2W Drain current: 8A Pulsed drain current: 75A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMT10H015LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 100V Gate charge: 33.3nC On-state resistance: 23.5mΩ Power dissipation: 2W Drain current: 8A Pulsed drain current: 75A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMTH8008LFGQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 70A; Idm: 280A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 80V Gate charge: 37.7nC On-state resistance: 6.9mΩ Power dissipation: 50W Drain current: 70A Pulsed drain current: 280A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMN10H170SFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 100V Gate charge: 14.9nC On-state resistance: 0.133Ω Power dissipation: 1.3W Drain current: 3A Pulsed drain current: 16A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMP4013LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: -40V On-state resistance: 13mΩ Power dissipation: 1W Drain current: -8.3A Pulsed drain current: 80A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMP2008UFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: -20V On-state resistance: 8mΩ Power dissipation: 2.4W Drain current: -11A Pulsed drain current: -80A Gate-source voltage: ±8V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMP3011SFVWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -176A; 2.25W; ESD Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: -30V Gate charge: 46nC On-state resistance: 10mΩ Power dissipation: 2.25W Drain current: -50A Pulsed drain current: -176A Gate-source voltage: ±25V Version: ESD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
AP7363-10D-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 1.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 1V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: AP7363
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 1.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 1V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: AP7363
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ15CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 26976 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
266+ | 0.27 EUR |
311+ | 0.23 EUR |
496+ | 0.14 EUR |
596+ | 0.12 EUR |
820+ | 0.087 EUR |
863+ | 0.083 EUR |
5000+ | 0.08 EUR |
DFLS1100-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 36pF
Max. forward voltage: 0.77V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 36pF
Max. forward voltage: 0.77V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 9305 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
463+ | 0.15 EUR |
589+ | 0.12 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
B160-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
auf Bestellung 9626 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
575+ | 0.12 EUR |
709+ | 0.1 EUR |
776+ | 0.092 EUR |
1454+ | 0.049 EUR |
1539+ | 0.046 EUR |
B350A-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: reel; tape
Power dissipation: 0.85W
Capacitance: 200pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: reel; tape
Power dissipation: 0.85W
Capacitance: 200pF
auf Bestellung 5309 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
172+ | 0.42 EUR |
186+ | 0.39 EUR |
250+ | 0.29 EUR |
758+ | 0.094 EUR |
807+ | 0.089 EUR |
B350AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 80A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 200pF
Load current: 3A
Max. forward voltage: 0.7V
Application: automotive industry
Power dissipation: 0.85W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 80A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 200pF
Load current: 3A
Max. forward voltage: 0.7V
Application: automotive industry
Power dissipation: 0.85W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B350AF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 80A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 24mA
Kind of package: reel; tape
Capacitance: 110pF
Load current: 3A
Max. forward voltage: 0.65V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 80A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 24mA
Kind of package: reel; tape
Capacitance: 110pF
Load current: 3A
Max. forward voltage: 0.65V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZVN2110GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
81+ | 0.89 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
BC807-25W-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
410+ | 0.17 EUR |
721+ | 0.099 EUR |
1038+ | 0.069 EUR |
2315+ | 0.031 EUR |
2440+ | 0.029 EUR |
SMAJ22AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMAJ22ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.17 EUR |
BAS20-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS20DWQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS20DW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS20Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS20W-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ22CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
278+ | 0.26 EUR |
321+ | 0.22 EUR |
402+ | 0.17 EUR |
SMBJ22A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ22CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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SMBJ22AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.16 EUR |
AP7332-1218FM-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,1.8V; 0.3A; SOT26
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT26
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.6V
Number of channels: 2
Tolerance: ±2%
Output voltage: 1.2V; 1.8V
Input voltage: 2...6V
Type of integrated circuit: voltage regulator
Manufacturer series: AP7332
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,1.8V; 0.3A; SOT26
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT26
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.6V
Number of channels: 2
Tolerance: ±2%
Output voltage: 1.2V; 1.8V
Input voltage: 2...6V
Type of integrated circuit: voltage regulator
Manufacturer series: AP7332
Produkt ist nicht verfügbar
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AP7332-3333W6-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT26; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT26
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.6V
Number of channels: 2
Tolerance: ±2%
Output voltage: 3.3V
Input voltage: 2...6V
Type of integrated circuit: voltage regulator
Manufacturer series: AP7332
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT26; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT26
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.6V
Number of channels: 2
Tolerance: ±2%
Output voltage: 3.3V
Input voltage: 2...6V
Type of integrated circuit: voltage regulator
Manufacturer series: AP7332
Produkt ist nicht verfügbar
Im Einkaufswagen
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BCX5616QTC |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.084 EUR |
BZX84C5V6Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.026 EUR |
D5V0L1B2S9-7 |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
auf Bestellung 5082 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
396+ | 0.18 EUR |
794+ | 0.09 EUR |
1629+ | 0.044 EUR |
1725+ | 0.041 EUR |
B340Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B340BQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B340CE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 140pF
Leakage current: 30mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 140pF
Leakage current: 30mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AHC594T16-13 |
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Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: TSSOP16
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Technology: CMOS
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: TSSOP16
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Technology: CMOS
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
205+ | 0.35 EUR |
231+ | 0.31 EUR |
266+ | 0.27 EUR |
313+ | 0.23 EUR |
527+ | 0.14 EUR |
556+ | 0.13 EUR |
B150-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
292+ | 0.24 EUR |
AL5887JAZW52-13 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; I2C,SPI; WQFN52; 70mA; Ch: 36; 2.7÷5.5VDC
Interface: I2C; SPI
Case: WQFN52
Type of integrated circuit: driver
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output current: 70mA
Number of channels: 36
Operating voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; LED driver; I2C,SPI; WQFN52; 70mA; Ch: 36; 2.7÷5.5VDC
Interface: I2C; SPI
Case: WQFN52
Type of integrated circuit: driver
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output current: 70mA
Number of channels: 36
Operating voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84B3V0Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 3V
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 3V
Application: automotive industry
Semiconductor structure: single diode
auf Bestellung 1760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1760+ | 0.04 EUR |
BZX84B16Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 16V
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 16V
Application: automotive industry
Semiconductor structure: single diode
auf Bestellung 1180 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1180+ | 0.06 EUR |
DMN1004UFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain current: 55A
Drain-source voltage: 12V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain current: 55A
Drain-source voltage: 12V
Kind of package: 7 inch reel; tape
auf Bestellung 836 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
99+ | 0.73 EUR |
112+ | 0.64 EUR |
152+ | 0.47 EUR |
242+ | 0.3 EUR |
257+ | 0.28 EUR |
FMMT718TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23
Pulsed collector current: 6A
Current gain: 15...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23
Pulsed collector current: 6A
Current gain: 15...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DESD1CAN2SOQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT23; Ch: 2; reel,tape
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: TVS array
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT23; Ch: 2; reel,tape
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: TVS array
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
186+ | 0.39 EUR |
208+ | 0.34 EUR |
338+ | 0.21 EUR |
486+ | 0.15 EUR |
516+ | 0.14 EUR |
DESD1CAN2WQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT323; Ch: 2; reel,tape
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: TVS array
Capacitance: 12pF
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; SOT323; Ch: 2; reel,tape
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: TVS array
Capacitance: 12pF
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 25.4V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP3036SFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Drain current: -7A
Pulsed drain current: -80A
Gate-source voltage: ±25V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Drain current: -7A
Pulsed drain current: -80A
Gate-source voltage: ±25V
Kind of channel: enhancement
auf Bestellung 1979 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
115+ | 0.62 EUR |
262+ | 0.27 EUR |
277+ | 0.26 EUR |
DMN3024SFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
auf Bestellung 2348 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
161+ | 0.45 EUR |
296+ | 0.24 EUR |
313+ | 0.23 EUR |
DXTP03100BFG-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Case: PowerDI®3333-8
Current gain: 5...300
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Case: PowerDI®3333-8
Current gain: 5...300
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DXTP03060BFG-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DXTP03060CFG-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Current gain: 45...800
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Current gain: 45...800
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP3036SFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
On-state resistance: 29mΩ
Power dissipation: 0.9W
Drain current: -30A
Gate-source voltage: ±25V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
On-state resistance: 29mΩ
Power dissipation: 0.9W
Drain current: -30A
Gate-source voltage: ±25V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT8012LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 80V
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 30A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 80V
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 30A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DXTN07045DFG-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
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DXTN07060BFG-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
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DXTN07100BFG-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: PowerDI®3333-8
Mounting: SMD
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Power dissipation: 0.9W
Pulsed collector current: 6A
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DMN10H170SFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 100V
On-state resistance: 0.133Ω
Power dissipation: 1.3W
Drain current: 2.7A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 100V
On-state resistance: 0.133Ω
Power dissipation: 1.3W
Drain current: 2.7A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN3009LFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 9mΩ
Power dissipation: 2W
Drain current: 50A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 9mΩ
Power dissipation: 2W
Drain current: 50A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN3009LFVW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 7.4mΩ
Power dissipation: 2W
Drain current: 48A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 7.4mΩ
Power dissipation: 2W
Drain current: 48A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN3009LFVWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 7.4mΩ
Power dissipation: 2W
Drain current: 48A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Gate charge: 42nC
On-state resistance: 7.4mΩ
Power dissipation: 2W
Drain current: 48A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
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DMN6017SFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Gate charge: 55nC
On-state resistance: 20mΩ
Power dissipation: 2W
Drain current: 28A
Pulsed drain current: 140A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Gate charge: 55nC
On-state resistance: 20mΩ
Power dissipation: 2W
Drain current: 28A
Pulsed drain current: 140A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMT10H009LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 41nC
On-state resistance: 12.5mΩ
Power dissipation: 2W
Drain current: 11A
Pulsed drain current: 200A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 41nC
On-state resistance: 12.5mΩ
Power dissipation: 2W
Drain current: 11A
Pulsed drain current: 200A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMT10H015LFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 100V
Gate charge: 33.3nC
On-state resistance: 23.5mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 100V
Gate charge: 33.3nC
On-state resistance: 23.5mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMT10H015LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 33.3nC
On-state resistance: 23.5mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 33.3nC
On-state resistance: 23.5mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMTH8008LFGQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 70A; Idm: 280A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 80V
Gate charge: 37.7nC
On-state resistance: 6.9mΩ
Power dissipation: 50W
Drain current: 70A
Pulsed drain current: 280A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 70A; Idm: 280A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 80V
Gate charge: 37.7nC
On-state resistance: 6.9mΩ
Power dissipation: 50W
Drain current: 70A
Pulsed drain current: 280A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN10H170SFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 14.9nC
On-state resistance: 0.133Ω
Power dissipation: 1.3W
Drain current: 3A
Pulsed drain current: 16A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 100V
Gate charge: 14.9nC
On-state resistance: 0.133Ω
Power dissipation: 1.3W
Drain current: 3A
Pulsed drain current: 16A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMP4013LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 13mΩ
Power dissipation: 1W
Drain current: -8.3A
Pulsed drain current: 80A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 13mΩ
Power dissipation: 1W
Drain current: -8.3A
Pulsed drain current: 80A
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMP2008UFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -20V
On-state resistance: 8mΩ
Power dissipation: 2.4W
Drain current: -11A
Pulsed drain current: -80A
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -20V
On-state resistance: 8mΩ
Power dissipation: 2.4W
Drain current: -11A
Pulsed drain current: -80A
Gate-source voltage: ±8V
Kind of channel: enhancement
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DMP3011SFVWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -176A; 2.25W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 2.25W
Drain current: -50A
Pulsed drain current: -176A
Gate-source voltage: ±25V
Version: ESD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -176A; 2.25W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 2.25W
Drain current: -50A
Pulsed drain current: -176A
Gate-source voltage: ±25V
Version: ESD
Kind of channel: enhancement
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