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BZT52C51-7-F BZT52C51-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 51V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5900 Stücke:
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564+0.13 EUR
834+0.086 EUR
1021+0.07 EUR
1839+0.039 EUR
2067+0.035 EUR
2315+0.031 EUR
2794+0.026 EUR
2942+0.024 EUR
Mindestbestellmenge: 564
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BZT52C51S-13 BZT52C51S-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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BZT52C51S-7 BZT52C51S-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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BAV23AQ-13-F DIODES INCORPORATED BAV23AQ_CQ_SQ.pdf Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 20000 Stücke:
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10000+0.045 EUR
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DDZ19-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
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ZTX653QSTZ DIODES INCORPORATED ZTX652.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
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BCM857BS-7-F BCM857BS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE9869A80BBE2F178BF&compId=BCM857BS.pdf?ci_sign=7ab31c9d7af72863753e00cc4a1bd9a20392832f Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 3087 Stücke:
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417+0.17 EUR
658+0.11 EUR
864+0.083 EUR
1516+0.047 EUR
1603+0.045 EUR
Mindestbestellmenge: 417
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DDTA123ECA-7-F DDTA123ECA-7-F DIODES INCORPORATED ds30333.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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DDTA123EE-7-F DIODES INCORPORATED ds30317.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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DDTA123JE-7-F DIODES INCORPORATED ds30318.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Quantity in set/package: 3000pcs.
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DDTA123JUA-7-F DIODES INCORPORATED ds30326.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Quantity in set/package: 3000pcs.
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DDTA123TCA-7-F DIODES INCORPORATED DDTA_R1-ONLY_SERIES_CA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTA123YCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTA123YUA-7-F DDTA123YUA-7-F DIODES INCORPORATED ds30326.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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74LVC1G58FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BCE0D3&compId=74LVC1G58.pdf?ci_sign=578b66d8f2cfa7421771c685f9b16c354d39914e Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter
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74LVC1G58FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BBE0D3&compId=74LVC1G58.pdf?ci_sign=87534fb331da3d04c65c5947e9d7e6360e298fbe Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter
Produkt ist nicht verfügbar
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74LVC1G58W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BDE0D3&compId=74LVC1G58.pdf?ci_sign=307f14995eb1bf81294e62f421d1f16cf2b0a9a4 Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter
Produkt ist nicht verfügbar
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ZXLD1356QET5TA DIODES INCORPORATED ZXLD1356Q.pdf Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.77 EUR
Mindestbestellmenge: 3000
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ZXMP6A13GTA ZXMP6A13GTA DIODES INCORPORATED ZXMP6A13G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.595Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -7.8A
auf Bestellung 397 Stücke:
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99+0.73 EUR
110+0.65 EUR
141+0.51 EUR
215+0.33 EUR
227+0.32 EUR
Mindestbestellmenge: 99
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ZXMP6A17GTA ZXMP6A17GTA DIODES INCORPORATED ZXMP6A17G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -13.7A
Drain current: -3A
On-state resistance: 0.125Ω
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1392 Stücke:
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80+0.9 EUR
104+0.69 EUR
133+0.54 EUR
221+0.32 EUR
233+0.31 EUR
Mindestbestellmenge: 80
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ZXMP6A18KTC ZXMP6A18KTC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2E501A9AD98BF&compId=ZXMP6A18K.pdf?ci_sign=9ce587467aac6cf0c48ed137b5a8436941ac98ce Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10.4A
Power dissipation: 4.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1488 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
82+0.88 EUR
86+0.83 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 64
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ZXMP6A18DN8TA ZXMP6A18DN8TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EDADAA770140143&compId=ZXMP6A18DN8.pdf?ci_sign=dfbe70487ac575f0dff5a5775629a2cf50ce002d Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.8A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 99 Stücke:
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30+2.42 EUR
61+1.19 EUR
86+0.83 EUR
91+0.79 EUR
Mindestbestellmenge: 30
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ZXMP6A16KTC ZXMP6A16KTC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2C4370D4C58BF&compId=ZXMP6A16K.pdf?ci_sign=a2f2b443ef393aba7e6ad7cb988c058d9b768e12 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1917 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.27 EUR
78+0.92 EUR
87+0.83 EUR
155+0.46 EUR
163+0.44 EUR
Mindestbestellmenge: 57
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ZXMP6A17GQTA ZXMP6A17GQTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2DA472AF5F8BF&compId=ZXMP6A17GQ.pdf?ci_sign=80e9c9a1e273f2f43a428c1da77223fe5ae6fd37 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2W; SOT223
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
On-state resistance: 0.19Ω
Power dissipation: 2W
Application: automotive industry
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
129+0.56 EUR
164+0.44 EUR
172+0.42 EUR
174+0.41 EUR
250+0.4 EUR
Mindestbestellmenge: 81
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ZXMP6A17E6QTA DIODES INCORPORATED ZXMP6A17E6Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.6A; 1.92W; SOT26
Type of transistor: P-MOSFET
Kind of package: reel
Mounting: SMD
Case: SOT26
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -13.6A
Drain current: -3A
Gate charge: 17.7nC
On-state resistance: 0.125Ω
Power dissipation: 1.92W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
126+0.57 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 82
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ZXMP6A17KTC DIODES INCORPORATED ZXMP6A17K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.44 EUR
Mindestbestellmenge: 2500
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ZXMP6A17DN8QTC DIODES INCORPORATED ZXMP6A17DN8.pdf Category: Multi channel transistors
Description: ZXMP6A17DN8QTC
auf Bestellung 2500 Stücke:
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2500+0.6 EUR
Mindestbestellmenge: 2500
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ZXMP6A18DN8QTC DIODES INCORPORATED Category: Multi channel transistors
Description: ZXMP6A18DN8QTC
auf Bestellung 2500 Stücke:
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2500+0.84 EUR
Mindestbestellmenge: 2500
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DMTH48M3SFVWQ-13 DIODES INCORPORATED DMTH48M3SFVWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-7 DIODES INCORPORATED DMTH48M3SFVWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
Produkt ist nicht verfügbar
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BCX52TA BCX52TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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DSS2540M-7 DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.082 EUR
Mindestbestellmenge: 3000
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ZXGD3003E6QTA DIODES INCORPORATED ZXGD3003E6Q.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.41 EUR
Mindestbestellmenge: 3000
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ZXGD3004E6QTA DIODES INCORPORATED Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.46 EUR
Mindestbestellmenge: 3000
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E27836A9B598BF&compId=ZXMHC10A07N8.pdf?ci_sign=d45da52fa173af0a6bbffdf7ee5dcfbf562892fc Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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91+0.79 EUR
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BZT52HC11WF-7 DIODES INCORPORATED BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
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74AHC86T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E0E0D3&compId=74AHC86.pdf?ci_sign=fc6955a127f689e8318d943d3bc768e9306ad43c Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
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74AHC1G32W5-7 74AHC1G32W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BAC092560D3&compId=74AHC1G32.pdf?ci_sign=d27a8986553bcec59373afa7c273b9c9306d954d Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
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400+0.18 EUR
545+0.13 EUR
623+0.11 EUR
1409+0.051 EUR
1489+0.048 EUR
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FMMT617 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5618BF5C4B5EA&compId=FMMT617.pdf?ci_sign=1a2b192d78c4d8f4839921e9f8d36b87c3ce8def Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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DMP2900UT-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
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GBJ606-F DIODES INCORPORATED ds21216.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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DMTH4004LPS-13 DIODES INCORPORATED DMTH4004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
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DMTH4004SPS-13 DIODES INCORPORATED DMTH4004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Kind of channel: enhancement
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DMTH4004LPSQ-13 DIODES INCORPORATED DMTH4004LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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DMTH4004SPSQ-13 DIODES INCORPORATED DMTH4004SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ16CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ60CA-13-F SMBJ60CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2570 Stücke:
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532+0.13 EUR
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SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
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250+0.29 EUR
305+0.23 EUR
345+0.21 EUR
506+0.14 EUR
550+0.13 EUR
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2N7002DWK-7 DIODES INCORPORATED 2N7002DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
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2N7002DWQ-7-F 2N7002DWQ-7-F DIODES INCORPORATED 2N7002DW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Application: automotive industry
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2N7002DWS-7 DIODES INCORPORATED 2N7002DWS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
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FMMT619TC DIODES INCORPORATED FMMT619.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
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10000+0.21 EUR
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ZXMN6A08KTC DIODES INCORPORATED ZXMN6A08K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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2500+0.37 EUR
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AP7341-30FS4-7 DIODES INCORPORATED AP7341.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; X2DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.27V
Output voltage: 3V
Output current: 0.3A
Case: X2DFN4
Mounting: SMD
Manufacturer series: AP7341
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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SMAJ130CA-13-F SMAJ130CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMA6J30CAQ-13 DIODES INCORPORATED SMA6J5.0CAQ-SMA6J70CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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5000+0.18 EUR
Mindestbestellmenge: 5000
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S1J-13-F S1J-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
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39+1.83 EUR
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DMG7430LFG-7 DMG7430LFG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C82326CD4B98BF&compId=DMG7430LFG.pdf?ci_sign=46a2dbeca1b150f07f6094f0e0e434e8cf49cb4f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
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228+0.31 EUR
261+0.27 EUR
321+0.22 EUR
397+0.18 EUR
421+0.17 EUR
435+0.16 EUR
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KBJ4005G KBJ4005G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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KBJ402G KBJ402G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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BZT52C51-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C51-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 51V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
564+0.13 EUR
834+0.086 EUR
1021+0.07 EUR
1839+0.039 EUR
2067+0.035 EUR
2315+0.031 EUR
2794+0.026 EUR
2942+0.024 EUR
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BZT52C51S-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C51S-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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BZT52C51S-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C51S-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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BAV23AQ-13-F BAV23AQ_CQ_SQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
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10000+0.045 EUR
Mindestbestellmenge: 10000
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DDZ19-7 DDZ5V1B-DDZ43.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
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ZTX653QSTZ ZTX652.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
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BCM857BS-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE9869A80BBE2F178BF&compId=BCM857BS.pdf?ci_sign=7ab31c9d7af72863753e00cc4a1bd9a20392832f
BCM857BS-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 3087 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
658+0.11 EUR
864+0.083 EUR
1516+0.047 EUR
1603+0.045 EUR
Mindestbestellmenge: 417
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DDTA123ECA-7-F ds30333.pdf
DDTA123ECA-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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DDTA123EE-7-F ds30317.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTA123JE-7-F ds30318.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123JUA-7-F ds30326.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123TCA-7-F DDTA_R1-ONLY_SERIES_CA.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123YCA-7-F ds30334.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123YUA-7-F ds30326.pdf
DDTA123YUA-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G58FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BCE0D3&compId=74LVC1G58.pdf?ci_sign=578b66d8f2cfa7421771c685f9b16c354d39914e
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G58FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BBE0D3&compId=74LVC1G58.pdf?ci_sign=87534fb331da3d04c65c5947e9d7e6360e298fbe
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G58W6-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BDE0D3&compId=74LVC1G58.pdf?ci_sign=307f14995eb1bf81294e62f421d1f16cf2b0a9a4
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXLD1356QET5TA ZXLD1356Q.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.77 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A13GTA ZXMP6A13G.pdf
ZXMP6A13GTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.595Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -7.8A
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
110+0.65 EUR
141+0.51 EUR
215+0.33 EUR
227+0.32 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17GTA ZXMP6A17G.pdf
ZXMP6A17GTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -13.7A
Drain current: -3A
On-state resistance: 0.125Ω
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1392 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
104+0.69 EUR
133+0.54 EUR
221+0.32 EUR
233+0.31 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A18KTC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2E501A9AD98BF&compId=ZXMP6A18K.pdf?ci_sign=9ce587467aac6cf0c48ed137b5a8436941ac98ce
ZXMP6A18KTC
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10.4A
Power dissipation: 4.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1488 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
82+0.88 EUR
86+0.83 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A18DN8TA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EDADAA770140143&compId=ZXMP6A18DN8.pdf?ci_sign=dfbe70487ac575f0dff5a5775629a2cf50ce002d
ZXMP6A18DN8TA
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.8A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
61+1.19 EUR
86+0.83 EUR
91+0.79 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A16KTC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2C4370D4C58BF&compId=ZXMP6A16K.pdf?ci_sign=a2f2b443ef393aba7e6ad7cb988c058d9b768e12
ZXMP6A16KTC
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1917 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
78+0.92 EUR
87+0.83 EUR
155+0.46 EUR
163+0.44 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17GQTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2DA472AF5F8BF&compId=ZXMP6A17GQ.pdf?ci_sign=80e9c9a1e273f2f43a428c1da77223fe5ae6fd37
ZXMP6A17GQTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2W; SOT223
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
On-state resistance: 0.19Ω
Power dissipation: 2W
Application: automotive industry
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
129+0.56 EUR
164+0.44 EUR
172+0.42 EUR
174+0.41 EUR
250+0.4 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17E6QTA ZXMP6A17E6Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.6A; 1.92W; SOT26
Type of transistor: P-MOSFET
Kind of package: reel
Mounting: SMD
Case: SOT26
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -13.6A
Drain current: -3A
Gate charge: 17.7nC
On-state resistance: 0.125Ω
Power dissipation: 1.92W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
126+0.57 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17KTC ZXMP6A17K.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.44 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17DN8QTC ZXMP6A17DN8.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: ZXMP6A17DN8QTC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.6 EUR
Mindestbestellmenge: 2500
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ZXMP6A18DN8QTC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: ZXMP6A18DN8QTC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.84 EUR
Mindestbestellmenge: 2500
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DMTH48M3SFVWQ-13 DMTH48M3SFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-7 DMTH48M3SFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX52TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX52TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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DSS2540M-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.082 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXGD3003E6QTA ZXGD3003E6Q.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.41 EUR
Mindestbestellmenge: 3000
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ZXGD3004E6QTA
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.46 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMHC10A07N8TC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E27836A9B598BF&compId=ZXMHC10A07N8.pdf?ci_sign=d45da52fa173af0a6bbffdf7ee5dcfbf562892fc
ZXMHC10A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2063 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
70+1.03 EUR
86+0.83 EUR
91+0.79 EUR
500+0.76 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
BZT52HC11WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHC86T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E0E0D3&compId=74AHC86.pdf?ci_sign=fc6955a127f689e8318d943d3bc768e9306ad43c
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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74AHC1G32W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BAC092560D3&compId=74AHC1G32.pdf?ci_sign=d27a8986553bcec59373afa7c273b9c9306d954d
74AHC1G32W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
400+0.18 EUR
545+0.13 EUR
623+0.11 EUR
1409+0.051 EUR
1489+0.048 EUR
Mindestbestellmenge: 186
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FMMT617 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5618BF5C4B5EA&compId=FMMT617.pdf?ci_sign=1a2b192d78c4d8f4839921e9f8d36b87c3ce8def
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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DMP2900UT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ606-F ds21216.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMTH4004LPS-13 DMTH4004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMTH4004SPS-13 DMTH4004SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMTH4004LPSQ-13 DMTH4004LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMTH4004SPSQ-13 DMTH4004SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ16CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ60CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ60CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
329+0.22 EUR
368+0.19 EUR
532+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 264
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SMBJ6.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ6.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
345+0.21 EUR
506+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 250
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2N7002DWK-7 2N7002DWK.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Produkt ist nicht verfügbar
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2N7002DWQ-7-F 2N7002DW.pdf
2N7002DWQ-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002DWS-7 2N7002DWS.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Produkt ist nicht verfügbar
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FMMT619TC FMMT619.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.21 EUR
Mindestbestellmenge: 10000
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ZXMN6A08KTC ZXMN6A08K.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.37 EUR
Mindestbestellmenge: 2500
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AP7341-30FS4-7 AP7341.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; X2DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.27V
Output voltage: 3V
Output current: 0.3A
Case: X2DFN4
Mounting: SMD
Manufacturer series: AP7341
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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SMAJ130CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ130CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMA6J30CAQ-13 SMA6J5.0CAQ-SMA6J70CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.18 EUR
Mindestbestellmenge: 5000
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S1J-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1J-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.83 EUR
Mindestbestellmenge: 39
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DMG7430LFG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C82326CD4B98BF&compId=DMG7430LFG.pdf?ci_sign=46a2dbeca1b150f07f6094f0e0e434e8cf49cb4f
DMG7430LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
auf Bestellung 1872 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
228+0.31 EUR
261+0.27 EUR
321+0.22 EUR
397+0.18 EUR
421+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 186
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KBJ4005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ4005G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBJ402G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ402G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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