Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79578) > Seite 1323 nach 1327
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DMP6185SK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -15A; 1.8W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -15A Power dissipation: 1.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 14nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SBR20A200CTB-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; SBR®; reel,tape Semiconductor structure: common cathode; double Technology: SBR® Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Reverse recovery time: 30ns Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 200V Case: D2PAK |
Produkt ist nicht verfügbar |
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SBR20A200CT-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR® Semiconductor structure: common cathode; double Technology: SBR® Type of diode: rectifying Kind of package: tube Mounting: THT Reverse recovery time: 30ns Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 200V Case: TO220AB |
Produkt ist nicht verfügbar |
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SBR20A200CTB | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube Semiconductor structure: common cathode; double Technology: SBR® Type of diode: Schottky rectifying Kind of package: tube Mounting: SMD Max. forward voltage: 0.96V Load current: 10A x2 Max. forward impulse current: 180A Max. off-state voltage: 200V Case: TO263AB |
Produkt ist nicht verfügbar |
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SBR20A200CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; ITO220AB; SBR® Semiconductor structure: common cathode; double Technology: SBR® Type of diode: rectifying Kind of package: tube Mounting: THT Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 200V Case: ITO220AB |
Produkt ist nicht verfügbar |
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D5V0F1U2S9-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923; reel,tape Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Max. forward impulse current: 1.5A |
auf Bestellung 9820 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ120CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 7.9A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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BAV170Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.125A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Capacitance: 2pF Features of semiconductor devices: small signal Application: automotive industry Max. load current: 0.5A |
auf Bestellung 4775 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV170T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT523 Max. forward voltage: 1.1V Kind of package: reel; tape Features of semiconductor devices: small signal |
auf Bestellung 2719 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV170-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: small signal Max. load current: 0.5A |
Produkt ist nicht verfügbar |
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BAV170Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry Max. load current: 0.5A |
Produkt ist nicht verfügbar |
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SMF4L18AQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; DO219AA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: DO219AA Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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FMMT458QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.225A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 50MHz Pulsed collector current: 1A Current gain: 15...300 Application: automotive industry |
Produkt ist nicht verfügbar |
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MMBF170Q-13-F | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry Pulsed drain current: 0.8A On-state resistance: 5.3Ω |
Produkt ist nicht verfügbar |
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MMBF170Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Pulsed drain current: 0.8A On-state resistance: 5.3Ω |
Produkt ist nicht verfügbar |
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MMBF170-13-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C15-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 3129 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C15-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 4542 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C15W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
auf Bestellung 2323 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C15Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C15Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C15S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
Produkt ist nicht verfügbar |
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SB3100-T | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.79V Load current: 3A Max. forward impulse current: 100A Max. off-state voltage: 100V Kind of package: reel; tape Case: DO201AD |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN3A14FQTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 2752 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3024LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 36mΩ Power dissipation: 1.3W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
auf Bestellung 2458 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3085LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -3.1A On-state resistance: 70mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 |
auf Bestellung 434 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3016LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 8.2/-6.2A On-state resistance: 0.028/0.016Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET |
auf Bestellung 577 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC4040SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 7.3/-7.5A On-state resistance: 0.04/0.045Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET |
auf Bestellung 625 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3018SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD Version: ESD Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
auf Bestellung 454 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN4031SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40V Pulsed drain current: 40A Drain current: 5.6A Gate charge: 18.6nC On-state resistance: 50mΩ Power dissipation: 2.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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DMN2029USD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.8A On-state resistance: 35mΩ Power dissipation: 0.7W Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
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DMP6110SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -24A Drain current: -2.7A On-state resistance: 0.105Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |
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DMP3028LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -30A Drain current: -5.8A Gate charge: 22nC On-state resistance: 38mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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DMN3033LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 30A Drain current: 5.8A Gate charge: 13nC On-state resistance: 27mΩ Power dissipation: 2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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DMC4028SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 5.5/-4.2A On-state resistance: 0.028/0.05Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |
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DMG4822SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 60A Drain current: 6.6A Gate charge: 10.5nC On-state resistance: 31mΩ Power dissipation: 1.42W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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DMG6898LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 30A Drain current: 7.1A Gate charge: 26nC On-state resistance: 23mΩ Power dissipation: 1.28W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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DMN2041LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 30A Drain current: 4.92A Gate charge: 15.6nC On-state resistance: 41mΩ Power dissipation: 1.16W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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DMN3015LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 80A Power dissipation: 1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 25.1nC |
Produkt ist nicht verfügbar |
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AP2301SN-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Kind of integrated circuit: high-side; USB switch Active logical level: low Case: U-DFN2020-6 Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
auf Bestellung 2954 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2301AFGE-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Kind of integrated circuit: high-side; USB switch Active logical level: low Case: U-DFN3030-8 Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
auf Bestellung 2321 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2331W-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Mounting: SMD Case: SC59 On-state resistance: 0.25Ω Kind of package: reel; tape Supply voltage: 2.7...5.2V DC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2337SA-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; SOT23 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 0.11Ω Output current: 1A Number of channels: 1 Kind of integrated circuit: high-side Case: SOT23 Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP2311AMP-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Kind of integrated circuit: high-side; USB switch Active logical level: high Case: MSOP8EP Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP2311SN-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Kind of integrated circuit: high-side; USB switch Active logical level: high Case: U-DFN2020-6 Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP2331FJ-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Mounting: SMD Case: U-DFN2020-3 On-state resistance: 0.25Ω Kind of package: reel; tape Supply voltage: 2.7...5.2V DC |
Produkt ist nicht verfügbar |
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D6V3H1U2LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.5µA Max. off-state voltage: 6.3V Breakdown voltage: 6.5V Max. forward impulse current: 90A Case: 0201; 0603 |
Produkt ist nicht verfügbar |
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D5V0S1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.5µA Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 150A Case: 0201; 0603 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
D26V0H1U2LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. off-state voltage: 26V Breakdown voltage: 28V Max. forward impulse current: 50A Case: U-DFN1616-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
D22V0H1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.2µA Max. off-state voltage: 22V Breakdown voltage: 23.5V Max. forward impulse current: 28A Peak pulse power dissipation: 1kW Case: 0201; 0603 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DRTR5V0U4LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Capacitance: 1.5pF Leakage current: 0.1µA Max. off-state voltage: 5.5V Breakdown voltage: 6V Number of channels: 4 Case: U-DFN1616-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMG7408SFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Pulsed drain current: 66A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 17nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DMP2100UFU-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Polarisation: unipolar Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET x2 Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Power dissipation: 0.9W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: U-DFN2030-6 |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2100UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD Polarisation: unipolar Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 75mΩ Power dissipation: 0.8W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Application: automotive industry Case: SOT23 |
auf Bestellung 2295 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C43-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 43V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BZX84C43Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 43V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2DA1797-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89 Polarisation: bipolar Mounting: SMD Type of transistor: PNP Case: SOT89 Kind of package: reel; tape Power dissipation: 2W Collector current: 3A Pulsed collector current: 6A Quantity in set/package: 2500pcs. Collector-emitter voltage: 50V Current gain: 82...270 Frequency: 160MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SDM20N40A-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 50pF Leakage current: 3mA Load current: 0.2A Power dissipation: 0.2W Max. forward voltage: 0.55V Semiconductor structure: common anode; double Max. forward impulse current: 1A Max. off-state voltage: 40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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B330A-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 200pF Power dissipation: 0.85W Load current: 3A Max. off-state voltage: 30V Max. forward impulse current: 80A Case: SMA |
auf Bestellung 3624 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C11-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 11V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 2584 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6185SK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -15A; 1.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -15A; 1.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR20A200CTB-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; SBR®; reel,tape
Semiconductor structure: common cathode; double
Technology: SBR®
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 30ns
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 200V
Case: D2PAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; SBR®; reel,tape
Semiconductor structure: common cathode; double
Technology: SBR®
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 30ns
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 200V
Case: D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR20A200CT-G |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Semiconductor structure: common cathode; double
Technology: SBR®
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Reverse recovery time: 30ns
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 200V
Case: TO220AB
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Semiconductor structure: common cathode; double
Technology: SBR®
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Reverse recovery time: 30ns
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 200V
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR20A200CTB |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Semiconductor structure: common cathode; double
Technology: SBR®
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: SMD
Max. forward voltage: 0.96V
Load current: 10A x2
Max. forward impulse current: 180A
Max. off-state voltage: 200V
Case: TO263AB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Semiconductor structure: common cathode; double
Technology: SBR®
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: SMD
Max. forward voltage: 0.96V
Load current: 10A x2
Max. forward impulse current: 180A
Max. off-state voltage: 200V
Case: TO263AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR20A200CTFP |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; ITO220AB; SBR®
Semiconductor structure: common cathode; double
Technology: SBR®
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 200V
Case: ITO220AB
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; ITO220AB; SBR®
Semiconductor structure: common cathode; double
Technology: SBR®
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 200V
Case: ITO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D5V0F1U2S9-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
auf Bestellung 9820 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
212+ | 0.34 EUR |
506+ | 0.14 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
SMCJ120CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAV170Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
auf Bestellung 4775 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1575+ | 0.046 EUR |
1750+ | 0.041 EUR |
2075+ | 0.034 EUR |
2225+ | 0.032 EUR |
BAV170T-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2719 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
569+ | 0.13 EUR |
610+ | 0.12 EUR |
715+ | 0.1 EUR |
771+ | 0.093 EUR |
1226+ | 0.058 EUR |
1296+ | 0.055 EUR |
BAV170-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAV170Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMF4L18AQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FMMT458QTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Pulsed collector current: 1A
Current gain: 15...300
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Pulsed collector current: 1A
Current gain: 15...300
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBF170Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBF170Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBF170-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.028 EUR |
BZX84C15-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 3129 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
532+ | 0.13 EUR |
1220+ | 0.059 EUR |
1568+ | 0.046 EUR |
1938+ | 0.037 EUR |
3031+ | 0.024 EUR |
3129+ | 0.023 EUR |
BZX84C15-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 4542 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1120+ | 0.064 EUR |
2480+ | 0.029 EUR |
2780+ | 0.026 EUR |
3080+ | 0.023 EUR |
3260+ | 0.022 EUR |
BZX84C15W-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
auf Bestellung 2323 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
288+ | 0.25 EUR |
355+ | 0.2 EUR |
477+ | 0.15 EUR |
915+ | 0.078 EUR |
1684+ | 0.042 EUR |
1780+ | 0.04 EUR |
BZX84C15Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C15Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C15S-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SB3100-T |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Kind of package: reel; tape
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Kind of package: reel; tape
Case: DO201AD
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
120+ | 0.6 EUR |
182+ | 0.39 EUR |
ZXMN3A14FQTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2752 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
118+ | 0.61 EUR |
164+ | 0.44 EUR |
172+ | 0.42 EUR |
174+ | 0.41 EUR |
500+ | 0.4 EUR |
DMN3024LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 36mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 36mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
auf Bestellung 2458 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
110+ | 0.65 EUR |
230+ | 0.31 EUR |
243+ | 0.29 EUR |
DMP3085LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
188+ | 0.38 EUR |
226+ | 0.32 EUR |
343+ | 0.21 EUR |
400+ | 0.18 EUR |
434+ | 0.17 EUR |
DMC3016LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
On-state resistance: 0.028/0.016Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
On-state resistance: 0.028/0.016Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
128+ | 0.56 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
DMC4040SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
auf Bestellung 625 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.4 EUR |
77+ | 0.94 EUR |
151+ | 0.47 EUR |
160+ | 0.45 EUR |
DMN3018SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Version: ESD
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Version: ESD
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
129+ | 0.55 EUR |
266+ | 0.27 EUR |
281+ | 0.25 EUR |
DMN4031SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 40A
Drain current: 5.6A
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 40A
Drain current: 5.6A
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN2029USD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 0.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 0.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP6110SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -24A
Drain current: -2.7A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -24A
Drain current: -2.7A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP3028LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -30A
Drain current: -5.8A
Gate charge: 22nC
On-state resistance: 38mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -30A
Drain current: -5.8A
Gate charge: 22nC
On-state resistance: 38mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN3033LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 30A
Drain current: 5.8A
Gate charge: 13nC
On-state resistance: 27mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 30A
Drain current: 5.8A
Gate charge: 13nC
On-state resistance: 27mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMC4028SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG4822SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 60A
Drain current: 6.6A
Gate charge: 10.5nC
On-state resistance: 31mΩ
Power dissipation: 1.42W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 60A
Drain current: 6.6A
Gate charge: 10.5nC
On-state resistance: 31mΩ
Power dissipation: 1.42W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG6898LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 30A
Drain current: 7.1A
Gate charge: 26nC
On-state resistance: 23mΩ
Power dissipation: 1.28W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 30A
Drain current: 7.1A
Gate charge: 26nC
On-state resistance: 23mΩ
Power dissipation: 1.28W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN2041LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 30A
Drain current: 4.92A
Gate charge: 15.6nC
On-state resistance: 41mΩ
Power dissipation: 1.16W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 30A
Drain current: 4.92A
Gate charge: 15.6nC
On-state resistance: 41mΩ
Power dissipation: 1.16W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN3015LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 80A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 80A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP2301SN-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
auf Bestellung 2954 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
230+ | 0.31 EUR |
258+ | 0.28 EUR |
363+ | 0.2 EUR |
382+ | 0.19 EUR |
AP2301AFGE-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN3030-8
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN3030-8
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
auf Bestellung 2321 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
186+ | 0.38 EUR |
210+ | 0.34 EUR |
260+ | 0.28 EUR |
275+ | 0.26 EUR |
1000+ | 0.25 EUR |
AP2331W-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
202+ | 0.35 EUR |
226+ | 0.32 EUR |
261+ | 0.27 EUR |
290+ | 0.25 EUR |
313+ | 0.23 EUR |
582+ | 0.12 EUR |
AP2337SA-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; SOT23
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 0.11Ω
Output current: 1A
Number of channels: 1
Kind of integrated circuit: high-side
Case: SOT23
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; SOT23
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 0.11Ω
Output current: 1A
Number of channels: 1
Kind of integrated circuit: high-side
Case: SOT23
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP2311AMP-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP2311SN-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP2331FJ-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-3
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-3
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D6V3H1U2LP16-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 6.3V
Breakdown voltage: 6.5V
Max. forward impulse current: 90A
Case: 0201; 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 6.3V
Breakdown voltage: 6.5V
Max. forward impulse current: 90A
Case: 0201; 0603
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D5V0S1U2LP1610-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 150A
Case: 0201; 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 150A
Case: 0201; 0603
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D26V0H1U2LP16-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 26V
Breakdown voltage: 28V
Max. forward impulse current: 50A
Case: U-DFN1616-2
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 26V
Breakdown voltage: 28V
Max. forward impulse current: 50A
Case: U-DFN1616-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D22V0H1U2LP1610-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.2µA
Max. off-state voltage: 22V
Breakdown voltage: 23.5V
Max. forward impulse current: 28A
Peak pulse power dissipation: 1kW
Case: 0201; 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.2µA
Max. off-state voltage: 22V
Breakdown voltage: 23.5V
Max. forward impulse current: 28A
Peak pulse power dissipation: 1kW
Case: 0201; 0603
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DRTR5V0U4LP16-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.5pF
Leakage current: 0.1µA
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Number of channels: 4
Case: U-DFN1616-6
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.5pF
Leakage current: 0.1µA
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Number of channels: 4
Case: U-DFN1616-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG7408SFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 66A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 66A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2100UFU-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
360+ | 0.2 EUR |
382+ | 0.19 EUR |
DMP2100UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
auf Bestellung 2295 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
261+ | 0.27 EUR |
327+ | 0.22 EUR |
447+ | 0.16 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
BZX84C43-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C43Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2DA1797-13 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Case: SOT89
Kind of package: reel; tape
Power dissipation: 2W
Collector current: 3A
Pulsed collector current: 6A
Quantity in set/package: 2500pcs.
Collector-emitter voltage: 50V
Current gain: 82...270
Frequency: 160MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Case: SOT89
Kind of package: reel; tape
Power dissipation: 2W
Collector current: 3A
Pulsed collector current: 6A
Quantity in set/package: 2500pcs.
Collector-emitter voltage: 50V
Current gain: 82...270
Frequency: 160MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SDM20N40A-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B330A-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Power dissipation: 0.85W
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 80A
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Power dissipation: 0.85W
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 80A
Case: SMA
auf Bestellung 3624 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
176+ | 0.41 EUR |
200+ | 0.36 EUR |
247+ | 0.29 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
BZT52C11-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 2584 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
625+ | 0.11 EUR |
758+ | 0.094 EUR |
1025+ | 0.07 EUR |
1707+ | 0.042 EUR |
2513+ | 0.028 EUR |
2584+ | 0.027 EUR |