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1SMB5945B-13 1SMB5945B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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BZX84C10W-7-F BZX84C10W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Kind of package: reel; tape
Case: SOT323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±6%
Zener voltage: 10V
Semiconductor structure: single diode
Mounting: SMD
auf Bestellung 3000 Stücke:
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358+0.2 EUR
521+0.14 EUR
944+0.076 EUR
1684+0.042 EUR
1780+0.04 EUR
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AZ23C10W-7-F DIODES INCORPORATED ds30257.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323
Kind of package: reel; tape
Case: SOT323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±6%
Zener voltage: 10V
Semiconductor structure: common anode; double
Mounting: SMD
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BC847B-13-F BC847B-13-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BC847BQ-7-F BC847BQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
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DMN2990UFB-7B DIODES INCORPORATED DMN2990UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW
Mounting: SMD
Kind of channel: enhancement
Case: X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 410pC
Drain current: 620mA
Power dissipation: 920mW
Pulsed drain current: 1.5A
On-state resistance: 1.8Ω
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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GBU808-01-LS DIODES INCORPORATED Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 860 Stücke:
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DFLZ24Q-7 DIODES INCORPORATED DFLZxxQ.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Power dissipation: 1W
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Application: automotive industry
Zener voltage: 24V
Tolerance: ±5%
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B140-13-F B140-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AD316779632748&compId=b120-160b.pdf?ci_sign=f87bf2f6a532754517c8bf5f6b5010781b1840db Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
auf Bestellung 3180 Stücke:
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313+0.23 EUR
414+0.17 EUR
525+0.14 EUR
584+0.12 EUR
1454+0.049 EUR
1539+0.046 EUR
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BZT52C16-7-F BZT52C16-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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556+0.13 EUR
807+0.089 EUR
1169+0.061 EUR
1389+0.051 EUR
2858+0.025 EUR
3013+0.024 EUR
3125+0.023 EUR
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1SMB5930B-13 1SMB5930B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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GBU606 GBU606 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBU
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DMNH6010SCTB-13 DIODES INCORPORATED DMNH6010SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DFLT27A-7 DFLT27A-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531ED99FC285B072CB9820&compId=DFLTxxxA_ser.pdf?ci_sign=fc08915929b24b3415a635a6eb35851ec3a39da3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 225W; 30÷33.15V; 5.15A; unidirectional; PowerDI®123
Mounting: SMD
Case: PowerDI®123
Max. off-state voltage: 27V
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 5.15A
Breakdown voltage: 30...33.15V
Peak pulse power dissipation: 225W
Kind of package: reel; tape
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FZT605TA FZT605TA DIODES INCORPORATED FZT605.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 2000...100000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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61+1.19 EUR
94+0.77 EUR
214+0.33 EUR
227+0.32 EUR
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ZTX614 ZTX614 DIODES INCORPORATED ZTX614.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
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105+0.69 EUR
122+0.59 EUR
176+0.41 EUR
186+0.39 EUR
2000+0.37 EUR
Mindestbestellmenge: 105
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74AHCT00T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E1E0D3&compId=74AHCT00.pdf?ci_sign=a9c506f14a6f92ea1df082435e097d5449e794bb Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: AHCT
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
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FZT651QTC DIODES INCORPORATED FZT651Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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4000+0.3 EUR
Mindestbestellmenge: 4000
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SMBJ75CA-13-F SMBJ75CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ85CA-13-F SMBJ85CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ100A-13-F SMCJ100A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ100CA-13-F SMCJ100CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP2035U-7 DMP2035U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED89A9967C2CA18&compId=DMP2035U.pdf?ci_sign=cabb7bd9788d193bfd681e481be2f6257b4bb2ad Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Power dissipation: 0.81W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
auf Bestellung 3340 Stücke:
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143+0.5 EUR
205+0.35 EUR
336+0.21 EUR
848+0.084 EUR
893+0.08 EUR
Mindestbestellmenge: 143
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DMP2033UVT-13 DMP2033UVT-13 DIODES INCORPORATED DMP2033UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
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DMP2033UVT-7 DMP2033UVT-7 DIODES INCORPORATED DMP2033UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.7W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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DMP2035UQ-7 DMP2035UQ-7 DIODES INCORPORATED DMP2035U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -4A
Gate charge: 15.4nC
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
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DMP2035UVT-13 DMP2035UVT-13 DIODES INCORPORATED DMP2035UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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DMP2035UVTQ-13 DMP2035UVTQ-13 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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DMP2035UVTQ-7 DMP2035UVTQ-7 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
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DMP2037U-7 DMP2037U-7 DIODES INCORPORATED DMP2037U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4.8A
Gate charge: 14.5nC
On-state resistance: 43mΩ
Power dissipation: 1.6W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
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DMP2039UFDE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E06887B11E98BF&compId=DMP2039UFDE.pdf?ci_sign=baef1c36c4e6b6088423d9eb6d6f60369b607996 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -5.4A
On-state resistance: 40mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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DMP2039UFDE4-7 DIODES INCORPORATED DMP2039UFDE4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: X2-DFN2020-6
Polarisation: unipolar
Pulsed drain current: -60A
Drain-source voltage: -25V
Drain current: -7.3A
Gate charge: 28.2nC
On-state resistance: 70mΩ
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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SMBJ12CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 54000 Stücke:
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DMG2302UK-7
+1
DMG2302UK-7 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN2056U-7 DMN2056U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3BB87C4EA18BF&compId=DMN2056U.pdf?ci_sign=02858e5a2ae901756f0aa55529d040dd315a3492 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMG2302UKQ-7 DMG2302UKQ-7 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG2302UK-13 DMG2302UK-13 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG2302UKQ-13 DMG2302UKQ-13 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG2302UQ-7 DMG2302UQ-7 DIODES INCORPORATED DMG2302UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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FZT688BTA FZT688BTA DIODES INCORPORATED FZT688.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 225 Stücke:
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DMN3065LW-7 DMN3065LW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED90BB128E54A18&compId=DMN3065LW.pdf?ci_sign=64395f49275f7994814ea379c2493f36ffcd24f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
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ADC114EUQ-7 DIODES INCORPORATED ADC114EUQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Application: automotive industry
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DDC114EH-7 DIODES INCORPORATED ds30421.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
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ADC114EUQ-13 DIODES INCORPORATED ADC114EUQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 10000pcs.
Current gain: 30
Application: automotive industry
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DDC114EUQ-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Pulsed collector current: 0.1A
Quantity in set/package: 3000pcs.
Current gain: 56
Application: automotive industry
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DDTC114ELP-7 DIODES INCORPORATED ds30945.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 10...100
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1SMB5929B-13 1SMB5929B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1339 Stücke:
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1SMB5921B-13 1SMB5921B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 799 Stücke:
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550+0.13 EUR
582+0.12 EUR
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1SMB5922B-13 1SMB5922B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 2675 Stücke:
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1SMB5952B-13 1SMB5952B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 130V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 130V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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1SMB5948B-13 1SMB5948B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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SBR0330CW-7 DIODES INCORPORATED SBR0330CW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape
Mounting: SMD
Load current: 0.3A
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Features of semiconductor devices: small signal
Case: SOT323
Type of diode: switching
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DFLU1200-7 DFLU1200-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF13ABCF2188745&compId=DFLU1200.pdf?ci_sign=1ea382f64970adb9e628efd713d2e31669b3d33b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; PowerDI®123; Ufmax: 0.98V
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 27pF
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: superfast switching
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DMN3042L-7 DMN3042L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C970B7E97238BF&compId=DMN3042L.pdf?ci_sign=dc29de961bbfa8e5d871beaa03a4027b9ae91cc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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500+0.14 EUR
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758+0.094 EUR
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SMBJ90A-13-F SMBJ90A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTC143XCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
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DDTC143XE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
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DDTC143XUA-7-F DIODES INCORPORATED ds30322.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
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SMBJ18A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ18AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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1SMB5945B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5945B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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BZX84C10W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C10W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Kind of package: reel; tape
Case: SOT323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±6%
Zener voltage: 10V
Semiconductor structure: single diode
Mounting: SMD
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Anzahl Preis
358+0.2 EUR
521+0.14 EUR
944+0.076 EUR
1684+0.042 EUR
1780+0.04 EUR
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AZ23C10W-7-F ds30257.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323
Kind of package: reel; tape
Case: SOT323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±6%
Zener voltage: 10V
Semiconductor structure: common anode; double
Mounting: SMD
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BC847B-13-F ds11108.pdf
BC847B-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BC847BQ-7-F ds11108.pdf
BC847BQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2990UFB-7B DMN2990UFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW
Mounting: SMD
Kind of channel: enhancement
Case: X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 410pC
Drain current: 620mA
Power dissipation: 920mW
Pulsed drain current: 1.5A
On-state resistance: 1.8Ω
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU808-01-LS
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
320+0.33 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
DFLZ24Q-7 DFLZxxQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Power dissipation: 1W
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Application: automotive industry
Zener voltage: 24V
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B140-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AD316779632748&compId=b120-160b.pdf?ci_sign=f87bf2f6a532754517c8bf5f6b5010781b1840db
B140-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
auf Bestellung 3180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
414+0.17 EUR
525+0.14 EUR
584+0.12 EUR
1454+0.049 EUR
1539+0.046 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C16-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C16-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3921 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
807+0.089 EUR
1169+0.061 EUR
1389+0.051 EUR
2858+0.025 EUR
3013+0.024 EUR
3125+0.023 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5930B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5930B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU606 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42
GBU606
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBU
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DMNH6010SCTB-13 DMNH6010SCTB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DFLT27A-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FC285B072CB9820&compId=DFLTxxxA_ser.pdf?ci_sign=fc08915929b24b3415a635a6eb35851ec3a39da3
DFLT27A-7
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 225W; 30÷33.15V; 5.15A; unidirectional; PowerDI®123
Mounting: SMD
Case: PowerDI®123
Max. off-state voltage: 27V
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 5.15A
Breakdown voltage: 30...33.15V
Peak pulse power dissipation: 225W
Kind of package: reel; tape
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
FZT605TA FZT605.pdf
FZT605TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 2000...100000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
94+0.77 EUR
214+0.33 EUR
227+0.32 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
ZTX614 ZTX614.pdf
ZTX614
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
auf Bestellung 3960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
122+0.59 EUR
176+0.41 EUR
186+0.39 EUR
2000+0.37 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT00T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E1E0D3&compId=74AHCT00.pdf?ci_sign=a9c506f14a6f92ea1df082435e097d5449e794bb
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: AHCT
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZT651QTC FZT651Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.3 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ75CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ75CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ85CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ85CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ100A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ100A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ100CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ100CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2035U-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED89A9967C2CA18&compId=DMP2035U.pdf?ci_sign=cabb7bd9788d193bfd681e481be2f6257b4bb2ad
DMP2035U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Power dissipation: 0.81W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
auf Bestellung 3340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
205+0.35 EUR
336+0.21 EUR
848+0.084 EUR
893+0.08 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
DMP2033UVT-13 DMP2033UVT.pdf
DMP2033UVT-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMP2033UVT-7 DMP2033UVT.pdf
DMP2033UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.7W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMP2035UQ-7 DMP2035U.pdf
DMP2035UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -4A
Gate charge: 15.4nC
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMP2035UVT-13 DMP2035UVT.pdf
DMP2035UVT-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMP2035UVTQ-13 DMP2035UVTQ.pdf
DMP2035UVTQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMP2035UVTQ-7 DMP2035UVTQ.pdf
DMP2035UVTQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2037U-7 DMP2037U.pdf
DMP2037U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4.8A
Gate charge: 14.5nC
On-state resistance: 43mΩ
Power dissipation: 1.6W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2039UFDE-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E06887B11E98BF&compId=DMP2039UFDE.pdf?ci_sign=baef1c36c4e6b6088423d9eb6d6f60369b607996
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -5.4A
On-state resistance: 40mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2039UFDE4-7 DMP2039UFDE4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: X2-DFN2020-6
Polarisation: unipolar
Pulsed drain current: -60A
Drain-source voltage: -25V
Drain current: -7.3A
Gate charge: 28.2nC
On-state resistance: 70mΩ
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ12CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 54000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UK-7 DMG2302UK.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
304+0.24 EUR
472+0.15 EUR
573+0.12 EUR
1040+0.069 EUR
1099+0.065 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
DMN2056U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3BB87C4EA18BF&compId=DMN2056U.pdf?ci_sign=02858e5a2ae901756f0aa55529d040dd315a3492
DMN2056U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2588 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
274+0.26 EUR
391+0.18 EUR
459+0.16 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UKQ-7 DMG2302UKQ.pdf
DMG2302UKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMG2302UK-13 DMG2302UK.pdf
DMG2302UK-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMG2302UKQ-13 DMG2302UKQ.pdf
DMG2302UKQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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FZT688BTA FZT688.pdf
FZT688BTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
98+0.73 EUR
149+0.48 EUR
158+0.45 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
DMN3065LW-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED90BB128E54A18&compId=DMN3065LW.pdf?ci_sign=64395f49275f7994814ea379c2493f36ffcd24f2
DMN3065LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
202+0.35 EUR
283+0.25 EUR
329+0.22 EUR
562+0.13 EUR
Mindestbestellmenge: 143
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ADC114EUQ-7 ADC114EUQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Application: automotive industry
Produkt ist nicht verfügbar
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DDC114EH-7 ds30421.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Produkt ist nicht verfügbar
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ADC114EUQ-13 ADC114EUQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 10000pcs.
Current gain: 30
Application: automotive industry
Produkt ist nicht verfügbar
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DDC114EUQ-7-F DDC_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Pulsed collector current: 0.1A
Quantity in set/package: 3000pcs.
Current gain: 56
Application: automotive industry
Produkt ist nicht verfügbar
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DDTC114ELP-7 ds30945.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 10...100
Produkt ist nicht verfügbar
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1SMB5929B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5929B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
184+0.39 EUR
210+0.34 EUR
329+0.22 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5921B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5921B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 799 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
237+0.3 EUR
291+0.25 EUR
321+0.22 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 152
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1SMB5922B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5922B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
226+0.32 EUR
397+0.18 EUR
532+0.13 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5952B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5952B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 130V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 130V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
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1SMB5948B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5948B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
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SBR0330CW-7 SBR0330CW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape
Mounting: SMD
Load current: 0.3A
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Features of semiconductor devices: small signal
Case: SOT323
Type of diode: switching
Produkt ist nicht verfügbar
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DFLU1200-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF13ABCF2188745&compId=DFLU1200.pdf?ci_sign=1ea382f64970adb9e628efd713d2e31669b3d33b
DFLU1200-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; PowerDI®123; Ufmax: 0.98V
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 27pF
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: superfast switching
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
175+0.41 EUR
Mindestbestellmenge: 175
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DMN3042L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C970B7E97238BF&compId=DMN3042L.pdf?ci_sign=dc29de961bbfa8e5d871beaa03a4027b9ae91cc1
DMN3042L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
288+0.25 EUR
338+0.21 EUR
500+0.14 EUR
582+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 218
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SMBJ90A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ90A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DDTC143XCA-7-F ds30330.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTC143XE-7-F ds30314.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTC143XUA-7-F ds30322.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMBJ18A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ18AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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