Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79578) > Seite 1317 nach 1327
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
1SMB5945B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BZX84C10W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode Kind of package: reel; tape Case: SOT323 Type of diode: Zener Power dissipation: 0.2W Tolerance: ±6% Zener voltage: 10V Semiconductor structure: single diode Mounting: SMD |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
AZ23C10W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323 Kind of package: reel; tape Case: SOT323 Type of diode: Zener Power dissipation: 0.2W Tolerance: ±6% Zener voltage: 10V Semiconductor structure: common anode; double Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BC847B-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BC847BQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Pulsed collector current: 0.2A Application: automotive industry Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DMN2990UFB-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW Mounting: SMD Kind of channel: enhancement Case: X1-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 410pC Drain current: 620mA Power dissipation: 920mW Pulsed drain current: 1.5A On-state resistance: 1.8Ω Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
GBU808-01-LS | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
auf Bestellung 860 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
DFLZ24Q-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode Power dissipation: 1W Case: PowerDI®123 Mounting: SMD Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Application: automotive industry Zener voltage: 24V Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
B140-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 110pF |
auf Bestellung 3180 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BZT52C16-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 16V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 3921 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
1SMB5930B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
GBU606 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 175A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated Case: GBU |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
DMNH6010SCTB-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB Mounting: SMD Case: TO263AB Polarisation: unipolar Gate charge: 46nC On-state resistance: 10mΩ Power dissipation: 5W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 94A Pulsed drain current: 532A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
DFLT27A-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 225W; 30÷33.15V; 5.15A; unidirectional; PowerDI®123 Mounting: SMD Case: PowerDI®123 Max. off-state voltage: 27V Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 5.15A Breakdown voltage: 30...33.15V Peak pulse power dissipation: 225W Kind of package: reel; tape |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
FZT605TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 1.5A Power dissipation: 1.2W Case: SOT223 Current gain: 2000...100000 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
ZTX614 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 1W Case: TO92 Current gain: 5000...10000 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk |
auf Bestellung 3960 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
74AHCT00T14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: AHCT Kind of output: push-pull Kind of package: reel; tape Technology: CMOS; TTL Kind of input: with Schmitt trigger Operating temperature: -40...150°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FZT651QTC | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
SMBJ75CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
SMBJ85CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85V Breakdown voltage: 94.4...108.2V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
SMCJ100A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 100V Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
SMCJ100CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 100V Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMP2035U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A On-state resistance: 62mΩ Power dissipation: 0.81W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
auf Bestellung 3340 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
DMP2033UVT-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 Polarisation: unipolar Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC On-state resistance: 0.2Ω Power dissipation: 1.7W Gate-source voltage: ±8V Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMP2033UVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 Polarisation: unipolar Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC On-state resistance: 0.2Ω Power dissipation: 1.7W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMP2035UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23 Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -20V Drain current: -4A Gate charge: 15.4nC On-state resistance: 62mΩ Power dissipation: 1.2W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMP2035UVT-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -20V Drain current: -5.7A Gate charge: 23.1nC On-state resistance: 62mΩ Power dissipation: 2W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMP2035UVTQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -20V Drain current: -5.7A Gate charge: 23.1nC On-state resistance: 62mΩ Power dissipation: 2W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMP2035UVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -20V Drain current: -5.7A Gate charge: 23.1nC On-state resistance: 62mΩ Power dissipation: 2W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMP2037U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Pulsed drain current: -38A Drain-source voltage: -20V Drain current: -4.8A Gate charge: 14.5nC On-state resistance: 43mΩ Power dissipation: 1.6W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DMP2039UFDE-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6; ESD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Mounting: SMD Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: -25V Drain current: -5.4A On-state resistance: 40mΩ Power dissipation: 0.8W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMP2039UFDE4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: X2-DFN2020-6 Polarisation: unipolar Pulsed drain current: -60A Drain-source voltage: -25V Drain current: -7.3A Gate charge: 28.2nC On-state resistance: 70mΩ Power dissipation: 1.5W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SMBJ12CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() +1 |
DMG2302UK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.66W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2955 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
DMN2056U-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 0.94W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2588 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
DMG2302UKQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMG2302UK-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMG2302UKQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
DMG2302UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FZT688BTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223 Polarisation: bipolar Case: SOT223 Mounting: SMD Type of transistor: NPN Power dissipation: 3W Collector current: 4A Collector-emitter voltage: 12V Quantity in set/package: 1000pcs. Frequency: 150MHz Kind of package: reel; tape |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
DMN3065LW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Polarisation: unipolar Case: SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 85mΩ Power dissipation: 0.77W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of package: 7 inch reel; tape |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
ADC114EUQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.27W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Current gain: 30 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DDC114EH-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Current gain: 30 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ADC114EUQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.27W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 10000pcs. Current gain: 30 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DDC114EUQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 50mA Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Pulsed collector current: 0.1A Quantity in set/package: 3000pcs. Current gain: 56 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DDTC114ELP-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Current gain: 10...100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
1SMB5929B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 1339 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
1SMB5921B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 5uA Type of diode: Zener Power dissipation: 3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
1SMB5922B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode; 5uA Type of diode: Zener Power dissipation: 3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 2675 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
1SMB5952B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 130V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 130V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
1SMB5948B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 91V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SBR0330CW-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape Mounting: SMD Load current: 0.3A Max. off-state voltage: 30V Semiconductor structure: common cathode; double Kind of package: reel; tape Technology: SBR® Features of semiconductor devices: small signal Case: SOT323 Type of diode: switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
DFLU1200-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 25ns; PowerDI®123; Ufmax: 0.98V Case: PowerDI®123 Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Capacitance: 27pF Reverse recovery time: 25ns Max. forward voltage: 0.98V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 200V Features of semiconductor devices: superfast switching |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
DMN3042L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SMBJ90A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 90V Breakdown voltage: 100...115.5V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DDTC143XCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DDTC143XE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DDTC143XUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SMBJ18A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SMBJ18AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
1SMB5945B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C10W-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Kind of package: reel; tape
Case: SOT323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±6%
Zener voltage: 10V
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Kind of package: reel; tape
Case: SOT323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±6%
Zener voltage: 10V
Semiconductor structure: single diode
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
521+ | 0.14 EUR |
944+ | 0.076 EUR |
1684+ | 0.042 EUR |
1780+ | 0.04 EUR |
AZ23C10W-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323
Kind of package: reel; tape
Case: SOT323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±6%
Zener voltage: 10V
Semiconductor structure: common anode; double
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323
Kind of package: reel; tape
Case: SOT323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±6%
Zener voltage: 10V
Semiconductor structure: common anode; double
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847B-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847BQ-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN2990UFB-7B |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW
Mounting: SMD
Kind of channel: enhancement
Case: X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 410pC
Drain current: 620mA
Power dissipation: 920mW
Pulsed drain current: 1.5A
On-state resistance: 1.8Ω
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW
Mounting: SMD
Kind of channel: enhancement
Case: X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 410pC
Drain current: 620mA
Power dissipation: 920mW
Pulsed drain current: 1.5A
On-state resistance: 1.8Ω
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GBU808-01-LS |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
320+ | 0.33 EUR |
DFLZ24Q-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Power dissipation: 1W
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Application: automotive industry
Zener voltage: 24V
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Power dissipation: 1W
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Application: automotive industry
Zener voltage: 24V
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B140-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
auf Bestellung 3180 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
414+ | 0.17 EUR |
525+ | 0.14 EUR |
584+ | 0.12 EUR |
1454+ | 0.049 EUR |
1539+ | 0.046 EUR |
BZT52C16-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3921 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
807+ | 0.089 EUR |
1169+ | 0.061 EUR |
1389+ | 0.051 EUR |
2858+ | 0.025 EUR |
3013+ | 0.024 EUR |
3125+ | 0.023 EUR |
1SMB5930B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GBU606 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBU
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.1 EUR |
DMNH6010SCTB-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DFLT27A-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 225W; 30÷33.15V; 5.15A; unidirectional; PowerDI®123
Mounting: SMD
Case: PowerDI®123
Max. off-state voltage: 27V
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 5.15A
Breakdown voltage: 30...33.15V
Peak pulse power dissipation: 225W
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 225W; 30÷33.15V; 5.15A; unidirectional; PowerDI®123
Mounting: SMD
Case: PowerDI®123
Max. off-state voltage: 27V
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 5.15A
Breakdown voltage: 30...33.15V
Peak pulse power dissipation: 225W
Kind of package: reel; tape
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
FZT605TA |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 2000...100000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 2000...100000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
94+ | 0.77 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
ZTX614 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
auf Bestellung 3960 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
122+ | 0.59 EUR |
176+ | 0.41 EUR |
186+ | 0.39 EUR |
2000+ | 0.37 EUR |
74AHCT00T14-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: AHCT
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: AHCT
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FZT651QTC |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.3 EUR |
SMBJ75CA-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ85CA-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMCJ100A-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMCJ100CA-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2035U-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Power dissipation: 0.81W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Power dissipation: 0.81W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
auf Bestellung 3340 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
205+ | 0.35 EUR |
336+ | 0.21 EUR |
848+ | 0.084 EUR |
893+ | 0.08 EUR |
DMP2033UVT-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2033UVT-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.7W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.7W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2035UQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -4A
Gate charge: 15.4nC
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -4A
Gate charge: 15.4nC
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2035UVT-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2035UVTQ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2035UVTQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2037U-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4.8A
Gate charge: 14.5nC
On-state resistance: 43mΩ
Power dissipation: 1.6W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4.8A
Gate charge: 14.5nC
On-state resistance: 43mΩ
Power dissipation: 1.6W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2039UFDE-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -5.4A
On-state resistance: 40mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -5.4A
On-state resistance: 40mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2039UFDE4-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: X2-DFN2020-6
Polarisation: unipolar
Pulsed drain current: -60A
Drain-source voltage: -25V
Drain current: -7.3A
Gate charge: 28.2nC
On-state resistance: 70mΩ
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: X2-DFN2020-6
Polarisation: unipolar
Pulsed drain current: -60A
Drain-source voltage: -25V
Drain current: -7.3A
Gate charge: 28.2nC
On-state resistance: 70mΩ
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ12CAQ-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 54000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.18 EUR |
DMG2302UK-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
304+ | 0.24 EUR |
472+ | 0.15 EUR |
573+ | 0.12 EUR |
1040+ | 0.069 EUR |
1099+ | 0.065 EUR |
DMN2056U-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2588 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
274+ | 0.26 EUR |
391+ | 0.18 EUR |
459+ | 0.16 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
DMG2302UKQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG2302UK-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG2302UKQ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG2302UQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FZT688BTA |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.17 EUR |
98+ | 0.73 EUR |
149+ | 0.48 EUR |
158+ | 0.45 EUR |
DMN3065LW-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
202+ | 0.35 EUR |
283+ | 0.25 EUR |
329+ | 0.22 EUR |
562+ | 0.13 EUR |
ADC114EUQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDC114EH-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 30
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ADC114EUQ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 10000pcs.
Current gain: 30
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.27W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 10000pcs.
Current gain: 30
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDC114EUQ-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Pulsed collector current: 0.1A
Quantity in set/package: 3000pcs.
Current gain: 56
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Pulsed collector current: 0.1A
Quantity in set/package: 3000pcs.
Current gain: 56
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC114ELP-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 10...100
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 10...100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SMB5929B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1339 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
184+ | 0.39 EUR |
210+ | 0.34 EUR |
329+ | 0.22 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
1SMB5921B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 799 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
237+ | 0.3 EUR |
291+ | 0.25 EUR |
321+ | 0.22 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
1SMB5922B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
226+ | 0.32 EUR |
397+ | 0.18 EUR |
532+ | 0.13 EUR |
1SMB5952B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 130V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 130V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 130V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 130V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SMB5948B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR0330CW-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape
Mounting: SMD
Load current: 0.3A
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Features of semiconductor devices: small signal
Case: SOT323
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape
Mounting: SMD
Load current: 0.3A
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Features of semiconductor devices: small signal
Case: SOT323
Type of diode: switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DFLU1200-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; PowerDI®123; Ufmax: 0.98V
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 27pF
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; PowerDI®123; Ufmax: 0.98V
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 27pF
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: superfast switching
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
175+ | 0.41 EUR |
DMN3042L-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
288+ | 0.25 EUR |
338+ | 0.21 EUR |
500+ | 0.14 EUR |
582+ | 0.12 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
SMBJ90A-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC143XCA-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC143XE-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC143XUA-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ18A-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ18AQ-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH