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ADTC124ECAQ-13 DIODES INCORPORATED ADTC124ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 10000pcs.
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ADTC124ECAQ-7 DIODES INCORPORATED ADTC124ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 3000pcs.
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DDTC124ECA-7-F DDTC124ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
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ZXMS6005DGTA ZXMS6005DGTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC3B1B3B3118BF&compId=ZXMS6005DG.pdf?ci_sign=5504f62be868729aef97012db3267bb1b3cb1d73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Drain current: 2A
Version: ESD
Features of semiconductor devices: logic level
Technology: IntelliFET™
Drain-source voltage: 60V
Kind of channel: enhancement
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108+0.67 EUR
114+0.63 EUR
250+0.62 EUR
500+0.61 EUR
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ZXMS6005SGTA DIODES INCORPORATED ds32249.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6005DGQ-13 DIODES INCORPORATED ZXMS6005DGQ-13.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6005DGQTA DIODES INCORPORATED ZXMS6005DGQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6005DN8Q-13 DIODES INCORPORATED ZXMS6005DN8Q.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.8A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6005DT8TA DIODES INCORPORATED ds32248.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.8A; Ch: 2; N-Channel; SMD; SM8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SM8
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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SBR2A40P1-7 SBR2A40P1-7 DIODES INCORPORATED SBR2A40P1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SBR®; SMD; 40V; 2A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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432+0.17 EUR
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SDM1U100S1F-7 SDM1U100S1F-7 DIODES INCORPORATED SDM1U100S1F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 42pF
Max. forward voltage: 0.77V
Leakage current: 0.5mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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AP3602AKTR-G1 AP3602AKTR-G1 DIODES INCORPORATED AP3602A_B.pdf Category: LED drivers
Description: IC: driver; charge pump; SOT26; 50÷100mA; 4.8÷5.2V; Uin: 2.7÷5V
Case: SOT26
Mounting: SMD
Output voltage: 4.8...5.2V
Output current: 50...100mA
Type of integrated circuit: driver
Input voltage: 2.7...5V
Maximum output current: 0.25A
Kind of integrated circuit: charge pump
Operating temperature: -40...85°C
Frequency: 1.2MHz
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154+0.47 EUR
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295+0.24 EUR
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ZVN4306A ZVN4306A DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C37906A271E749&compId=ZVN4306A.pdf?ci_sign=a8b54d32fc168ee554266f0a07a298b863a9fa84 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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72+1 EUR
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ZVN4310GTA ZVN4310GTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB66EBAD0298BF&compId=ZVN4310G.pdf?ci_sign=32ea766712f51aee48867e3c263a77ec1740bcec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.67A; Idm: 12A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.67A
Pulsed drain current: 12A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZVN4306ASTZ DIODES INCORPORATED ZVN4306A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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ZVN4306AV DIODES INCORPORATED ZVN4306AV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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ZVN4306GTA DIODES INCORPORATED ZVN4306G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.1A; Idm: 15A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.1A
Pulsed drain current: 15A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZVN4306GVTA DIODES INCORPORATED ZVN4306GV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.1A; Idm: 15A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.1A
Pulsed drain current: 15A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DDTC114EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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DDTC114ECA-7-F
+1
 		DDTC114ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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ADTC114ECAQ-13 DIODES INCORPORATED ADTC114ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 10000pcs.
Application: automotive industry
Current gain: 30
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ADTC114ECAQ-7 ADTC114ECAQ-7 DIODES INCORPORATED ADTC114ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
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DDTC114ECAQ-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 35
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DSS5160FDB-7 DIODES INCORPORATED DSS5160FDB.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Case: U-DFN2020-6
Current gain: 70...170
Mounting: SMD
Kind of package: reel; tape
Frequency: 65MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1.5A
Power dissipation: 2.47W
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DMC1029UFDB-7 DIODES INCORPORATED DMC1029UFDB.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 3.7/-2.3A
On-state resistance: 0.065/0.21Ω
Drain-source voltage: 12/-12V
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DMP2065UFDB-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0781A4B2BF8BF&compId=DMP2065UFDB.pdf?ci_sign=8b2ad1fd8bfbfa1edca6943278f37bd348be3e29 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.74W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain current: -3.2A
On-state resistance: 0.1Ω
Drain-source voltage: -20V
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DMC1030UFDB-7 DIODES INCORPORATED DMC1030UFDB.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 23.1/20.8nC
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 5.1/-3.9A
On-state resistance: 34/59mΩ
Drain-source voltage: 12/-12V
Version: ESD
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DMN1029UFDB-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C83C8A641E58BF&compId=DMN1029UFDB.pdf?ci_sign=06a8d04c33c32b3c6cd3e160295c29bb4a2f7bf4 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 3.7A
On-state resistance: 65mΩ
Drain-source voltage: 12V
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DMN2025UFDB-7 DIODES INCORPORATED DMN2025UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 12.3nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 35A
Drain current: 4.8A
On-state resistance: 31mΩ
Drain-source voltage: 20V
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DMN2041UFDB-7 DIODES INCORPORATED DMN2041UFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain current: 4.9A
On-state resistance: 65mΩ
Drain-source voltage: 20V
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DMN2050LFDB-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8EBA4EE8998BF&compId=DMN2050LFDB.pdf?ci_sign=63273a9ed7fc508d54b1fd1cec38eeb6a95a878d Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.73W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain current: 4.1A
On-state resistance: 55mΩ
Drain-source voltage: 20V
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DMN3032LFDB-7 DIODES INCORPORATED DMN3032LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.7W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 10.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain current: 5A
On-state resistance: 42mΩ
Drain-source voltage: 30V
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DMN3055LFDB-7 DIODES INCORPORATED DMN3055LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.87W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 11.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain current: 4A
On-state resistance: 75mΩ
Drain-source voltage: 30V
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DMP1046UFDB-7 DIODES INCORPORATED DMP1046UFDB.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 17.9nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain current: -3.8A
On-state resistance: 61mΩ
Drain-source voltage: -12V
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DMP1055UFDB-7 DIODES INCORPORATED DMP1055UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 20.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Drain current: -4A
On-state resistance: 0.215Ω
Drain-source voltage: -12V
Produkt ist nicht verfügbar
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DMS2220LFDB-7 DIODES INCORPORATED ds31546.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -12A
Drain current: -3.5A
On-state resistance: 0.12Ω
Drain-source voltage: -20V
Produkt ist nicht verfügbar
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DSS45160FDB-7 DIODES INCORPORATED DSS45160FDB.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Collector current: 1A
Pulsed collector current: 1.5A
Power dissipation: 2.47W
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 90...175MHz
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DXTP5820CFDB-7 DIODES INCORPORATED DXTP5820CFDB.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 0.69W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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DDTC123ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Current gain: 20
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDTC123EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Current gain: 20
Frequency: 250MHz
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DDTC123EUA-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Current gain: 20
Frequency: 250MHz
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S3DB-13-F S3DB-13-F DIODES INCORPORATED ds16005.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
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315+0.23 EUR
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428+0.17 EUR
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SMAJ100A-13-F SMAJ100A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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AS331KTR-G1 AS331KTR-G1 DIODES INCORPORATED AS331.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
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348+0.21 EUR
424+0.17 EUR
685+0.1 EUR
725+0.099 EUR
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74AUP2G06DW-7 74AUP2G06DW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8228640D3&compId=74AUP2G06.pdf?ci_sign=7fd91d41cd9e62fffa9e2be98b2da943ad3f46ac Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Case: SOT363
Number of inputs: 1
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
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74AUP1G08FW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68A440D3&compId=74AUP1G08.pdf?ci_sign=8189107f91067d65f95a43f936905ac44260313f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X1-DFN1010-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: AND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
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74AUP1G08FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C76700CA0D3&compId=74AUP1G08.pdf?ci_sign=637d72f37d51fc17d2eb8c40bd1c20ab3f58b2b1 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X2-DFN1410-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: AND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G09FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8227140D3&compId=74AUP1G09.pdf?ci_sign=a2289a5522a468ca721c4c8720239c4afce80482 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X2-DFN1410-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: open drain
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: AND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
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74AUP1G86SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8228140D3&compId=74AUP1G86.pdf?ci_sign=7940de00a8ce48f7735e1fc1e80ea84aebb3de83 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Case: SOT353
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: XOR
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP2G04FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8228440D3&compId=74AUP2G04.pdf?ci_sign=8558f67c066b9265f411f0e7ff291195f918700b Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Kind of output: push-pull
Number of inputs: 1
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Number of channels: 2
Produkt ist nicht verfügbar
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74AUP2G32RA3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70D9D4B5260D3&compId=74AUP2G32.pdf?ci_sign=3895e9aad03929f9e583f321f9fbdbd2fd36cc2d Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X2-DFN1210-8
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: OR
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G00FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BCE06E540D3&compId=74AUP1G00.pdf?ci_sign=56ebfba657496bad266192bec206e5a9da66dd43 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X2-DFN1010-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G00FW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BCE06E640D3&compId=74AUP1G00.pdf?ci_sign=31519b66d17999317d3a895763a4fc0d80f9a408 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X1-DFN1010-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
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AL17150-10BS7-13 DIODES INCORPORATED AL17150-10B.pdf Category: LED drivers
Description: IC: driver; buck-boost,flyback; LED driver; SO7; 300mA; Ch: 1
Type of integrated circuit: driver
Output current: 0.3A
Case: SO7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 8.2...8.8V DC
Kind of integrated circuit: LED driver
Topology: buck-boost; flyback
Produkt ist nicht verfügbar
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DMN6040SSD-13 DMN6040SSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA282298BF8748&compId=DMN6040SSD.pdf?ci_sign=cf649a4e662276bf99a4f263dde1ed28a03c3d0d Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Power dissipation: 0.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN6040SSS-13 DMN6040SSS-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED914734BAC0A18&compId=DMN6040SSS.pdf?ci_sign=64e05d3a711f59694d9cd684613cd3f64c25471c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN6040SK3-13 DMN6040SK3-13 DIODES INCORPORATED DMN6040SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 30A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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244+0.29 EUR
258+0.28 EUR
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DMN6040SE-13 DIODES INCORPORATED DMN6040SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.5A; Idm: 30A; 1.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN6040SFDE-7 DIODES INCORPORATED DMN6040SFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 30A; 0.66W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.66W
Case: U-DFN2020-6 Type E
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN6040SFDEQ-7 DIODES INCORPORATED DMN6040SFDEQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.1A; Idm: 30A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.1A
Pulsed drain current: 30A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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ADTC124ECAQ-13 ADTC124ECAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 10000pcs.
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ADTC124ECAQ-7 ADTC124ECAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTC124ECA-7-F ds30329.pdf
DDTC124ECA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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ZXMS6005DGTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC3B1B3B3118BF&compId=ZXMS6005DG.pdf?ci_sign=5504f62be868729aef97012db3267bb1b3cb1d73
ZXMS6005DGTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Drain current: 2A
Version: ESD
Features of semiconductor devices: logic level
Technology: IntelliFET™
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 549 Stücke:
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Anzahl Preis
52+1.39 EUR
75+0.96 EUR
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108+0.67 EUR
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ZXMS6005SGTA ds32249.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6005DGQ-13 ZXMS6005DGQ-13.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6005DGQTA ZXMS6005DGQ.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6005DN8Q-13 ZXMS6005DN8Q.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.8A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6005DT8TA ds32248.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.8A; Ch: 2; N-Channel; SMD; SM8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SM8
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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SBR2A40P1-7 SBR2A40P1.pdf
SBR2A40P1-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SBR®; SMD; 40V; 2A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
186+0.38 EUR
277+0.26 EUR
432+0.17 EUR
459+0.16 EUR
Mindestbestellmenge: 148
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SDM1U100S1F-7 SDM1U100S1F.pdf
SDM1U100S1F-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 42pF
Max. forward voltage: 0.77V
Leakage current: 0.5mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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AP3602AKTR-G1 AP3602A_B.pdf
AP3602AKTR-G1
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; charge pump; SOT26; 50÷100mA; 4.8÷5.2V; Uin: 2.7÷5V
Case: SOT26
Mounting: SMD
Output voltage: 4.8...5.2V
Output current: 50...100mA
Type of integrated circuit: driver
Input voltage: 2.7...5V
Maximum output current: 0.25A
Kind of integrated circuit: charge pump
Operating temperature: -40...85°C
Frequency: 1.2MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
138+0.52 EUR
154+0.47 EUR
178+0.4 EUR
295+0.24 EUR
311+0.23 EUR
Mindestbestellmenge: 114
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ZVN4306A pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C37906A271E749&compId=ZVN4306A.pdf?ci_sign=a8b54d32fc168ee554266f0a07a298b863a9fa84
ZVN4306A
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 3360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
51+1.42 EUR
68+1.06 EUR
72+1 EUR
250+0.97 EUR
Mindestbestellmenge: 37
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ZVN4310GTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB66EBAD0298BF&compId=ZVN4310G.pdf?ci_sign=32ea766712f51aee48867e3c263a77ec1740bcec
ZVN4310GTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.67A; Idm: 12A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.67A
Pulsed drain current: 12A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ZVN4306ASTZ ZVN4306A.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ZVN4306AV ZVN4306AV.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ZVN4306GTA ZVN4306G.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.1A; Idm: 15A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.1A
Pulsed drain current: 15A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ZVN4306GVTA ZVN4306GV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.1A; Idm: 15A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.1A
Pulsed drain current: 15A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DDTC114EE-7-F ds30313.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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DDTC114ECA-7-F ds30329.pdf
DDTC114ECA-7-F
+1
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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ADTC114ECAQ-13 ADTC114ECAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 10000pcs.
Application: automotive industry
Current gain: 30
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ADTC114ECAQ-7 ADTC114ECAQ.pdf
ADTC114ECAQ-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
Produkt ist nicht verfügbar
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DDTC114ECAQ-7-F ds30329.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 35
Produkt ist nicht verfügbar
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DSS5160FDB-7 DSS5160FDB.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Case: U-DFN2020-6
Current gain: 70...170
Mounting: SMD
Kind of package: reel; tape
Frequency: 65MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1.5A
Power dissipation: 2.47W
Produkt ist nicht verfügbar
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DMC1029UFDB-7 DMC1029UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 3.7/-2.3A
On-state resistance: 0.065/0.21Ω
Drain-source voltage: 12/-12V
Produkt ist nicht verfügbar
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DMP2065UFDB-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0781A4B2BF8BF&compId=DMP2065UFDB.pdf?ci_sign=8b2ad1fd8bfbfa1edca6943278f37bd348be3e29
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.74W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain current: -3.2A
On-state resistance: 0.1Ω
Drain-source voltage: -20V
Produkt ist nicht verfügbar
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DMC1030UFDB-7 DMC1030UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 23.1/20.8nC
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 5.1/-3.9A
On-state resistance: 34/59mΩ
Drain-source voltage: 12/-12V
Version: ESD
Produkt ist nicht verfügbar
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DMN1029UFDB-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C83C8A641E58BF&compId=DMN1029UFDB.pdf?ci_sign=06a8d04c33c32b3c6cd3e160295c29bb4a2f7bf4
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain current: 3.7A
On-state resistance: 65mΩ
Drain-source voltage: 12V
Produkt ist nicht verfügbar
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DMN2025UFDB-7 DMN2025UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 12.3nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 35A
Drain current: 4.8A
On-state resistance: 31mΩ
Drain-source voltage: 20V
Produkt ist nicht verfügbar
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DMN2041UFDB-7 DMN2041UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain current: 4.9A
On-state resistance: 65mΩ
Drain-source voltage: 20V
Produkt ist nicht verfügbar
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DMN2050LFDB-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8EBA4EE8998BF&compId=DMN2050LFDB.pdf?ci_sign=63273a9ed7fc508d54b1fd1cec38eeb6a95a878d
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.73W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain current: 4.1A
On-state resistance: 55mΩ
Drain-source voltage: 20V
Produkt ist nicht verfügbar
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DMN3032LFDB-7 DMN3032LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.7W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 10.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain current: 5A
On-state resistance: 42mΩ
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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DMN3055LFDB-7 DMN3055LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.87W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 11.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain current: 4A
On-state resistance: 75mΩ
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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DMP1046UFDB-7 DMP1046UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 17.9nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain current: -3.8A
On-state resistance: 61mΩ
Drain-source voltage: -12V
Produkt ist nicht verfügbar
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DMP1055UFDB-7 DMP1055UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 20.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Drain current: -4A
On-state resistance: 0.215Ω
Drain-source voltage: -12V
Produkt ist nicht verfügbar
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DMS2220LFDB-7 ds31546.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -12A
Drain current: -3.5A
On-state resistance: 0.12Ω
Drain-source voltage: -20V
Produkt ist nicht verfügbar
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DSS45160FDB-7 DSS45160FDB.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Collector current: 1A
Pulsed collector current: 1.5A
Power dissipation: 2.47W
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 90...175MHz
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DXTP5820CFDB-7 DXTP5820CFDB.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 0.69W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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DDTC123ECA-7-F ds30329.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Current gain: 20
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDTC123EE-7-F ds30313.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Current gain: 20
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDTC123EUA-7-F ds30321.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Current gain: 20
Frequency: 250MHz
Produkt ist nicht verfügbar
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S3DB-13-F ds16005.pdf
S3DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 783 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
264+0.27 EUR
278+0.26 EUR
315+0.23 EUR
404+0.18 EUR
428+0.17 EUR
Mindestbestellmenge: 239
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SMAJ100A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ100A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 2037 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
266+0.27 EUR
321+0.22 EUR
852+0.084 EUR
885+0.081 EUR
937+0.076 EUR
Mindestbestellmenge: 218
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AS331KTR-G1 AS331.pdf
AS331KTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
264+0.27 EUR
298+0.24 EUR
348+0.21 EUR
424+0.17 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 218
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74AUP2G06DW-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8228640D3&compId=74AUP2G06.pdf?ci_sign=7fd91d41cd9e62fffa9e2be98b2da943ad3f46ac
74AUP2G06DW-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Case: SOT363
Number of inputs: 1
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G08FW5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68A440D3&compId=74AUP1G08.pdf?ci_sign=8189107f91067d65f95a43f936905ac44260313f
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X1-DFN1010-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: AND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G08FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C76700CA0D3&compId=74AUP1G08.pdf?ci_sign=637d72f37d51fc17d2eb8c40bd1c20ab3f58b2b1
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X2-DFN1410-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: AND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G09FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8227140D3&compId=74AUP1G09.pdf?ci_sign=a2289a5522a468ca721c4c8720239c4afce80482
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X2-DFN1410-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: open drain
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: AND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G86SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8228140D3&compId=74AUP1G86.pdf?ci_sign=7940de00a8ce48f7735e1fc1e80ea84aebb3de83
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Case: SOT353
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: XOR
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP2G04FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70CC8228440D3&compId=74AUP2G04.pdf?ci_sign=8558f67c066b9265f411f0e7ff291195f918700b
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Kind of output: push-pull
Number of inputs: 1
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Number of channels: 2
Produkt ist nicht verfügbar
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74AUP2G32RA3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70D9D4B5260D3&compId=74AUP2G32.pdf?ci_sign=3895e9aad03929f9e583f321f9fbdbd2fd36cc2d
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X2-DFN1210-8
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: OR
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G00FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BCE06E540D3&compId=74AUP1G00.pdf?ci_sign=56ebfba657496bad266192bec206e5a9da66dd43
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X2-DFN1010-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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74AUP1G00FW5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BCE06E640D3&compId=74AUP1G00.pdf?ci_sign=31519b66d17999317d3a895763a4fc0d80f9a408
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Case: X1-DFN1010-6
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: AUP
Mounting: SMD
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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AL17150-10BS7-13 AL17150-10B.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck-boost,flyback; LED driver; SO7; 300mA; Ch: 1
Type of integrated circuit: driver
Output current: 0.3A
Case: SO7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 8.2...8.8V DC
Kind of integrated circuit: LED driver
Topology: buck-boost; flyback
Produkt ist nicht verfügbar
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DMN6040SSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA282298BF8748&compId=DMN6040SSD.pdf?ci_sign=cf649a4e662276bf99a4f263dde1ed28a03c3d0d
DMN6040SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Power dissipation: 0.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
108+0.67 EUR
149+0.48 EUR
264+0.27 EUR
278+0.26 EUR
Mindestbestellmenge: 85
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DMN6040SSS-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED914734BAC0A18&compId=DMN6040SSS.pdf?ci_sign=64e05d3a711f59694d9cd684613cd3f64c25471c
DMN6040SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
243+0.29 EUR
268+0.27 EUR
319+0.22 EUR
338+0.21 EUR
Mindestbestellmenge: 200
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DMN6040SK3-13 DMN6040SK3.pdf
DMN6040SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 30A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
171+0.42 EUR
205+0.35 EUR
244+0.29 EUR
258+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 114
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DMN6040SE-13 DMN6040SE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.5A; Idm: 30A; 1.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN6040SFDE-7 DMN6040SFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 30A; 0.66W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.66W
Case: U-DFN2020-6 Type E
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN6040SFDEQ-7 DMN6040SFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.1A; Idm: 30A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.1A
Pulsed drain current: 30A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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