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ZXMP6A18DN8QTC DIODES INCORPORATED Category: Multi channel transistors
Description: ZXMP6A18DN8QTC
auf Bestellung 2500 Stücke:
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2500+0.84 EUR
Mindestbestellmenge: 2500
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DMTH48M3SFVWQ-13 DIODES INCORPORATED DMTH48M3SFVWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
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DMTH48M3SFVWQ-7 DIODES INCORPORATED DMTH48M3SFVWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
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BCX52TA BCX52TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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DSS2540M-7 DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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3000+0.082 EUR
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ZXGD3003E6QTA DIODES INCORPORATED ZXGD3003E6Q.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
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ZXGD3004E6QTA DIODES INCORPORATED Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
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Lieferzeit 14-21 Tag (e)
3000+0.47 EUR
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E27836A9B598BF&compId=ZXMHC10A07N8.pdf?ci_sign=d45da52fa173af0a6bbffdf7ee5dcfbf562892fc Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2063 Stücke:
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59+1.23 EUR
70+1.03 EUR
86+0.84 EUR
91+0.79 EUR
500+0.76 EUR
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BZT52HC11WF-7 DIODES INCORPORATED BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
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74AHC86T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E0E0D3&compId=74AHC86.pdf?ci_sign=fc6955a127f689e8318d943d3bc768e9306ad43c Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74AHC1G32W5-7 74AHC1G32W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BAC092560D3&compId=74AHC1G32.pdf?ci_sign=d27a8986553bcec59373afa7c273b9c9306d954d Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
404+0.18 EUR
548+0.13 EUR
625+0.11 EUR
1417+0.05 EUR
1502+0.048 EUR
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FMMT617 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5618BF5C4B5EA&compId=FMMT617.pdf?ci_sign=1a2b192d78c4d8f4839921e9f8d36b87c3ce8def Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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DMP2900UT-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
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GBJ606-F DIODES INCORPORATED ds21216.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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DMTH4004LPS-13 DIODES INCORPORATED DMTH4004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
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DMTH4004SPS-13 DIODES INCORPORATED DMTH4004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Kind of channel: enhancement
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DMTH4004LPSQ-13 DIODES INCORPORATED DMTH4004LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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DMTH4004SPSQ-13 DIODES INCORPORATED DMTH4004SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Application: automotive industry
Kind of channel: enhancement
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SMBJ16CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ60CA-13-F SMBJ60CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2575 Stücke:
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264+0.27 EUR
334+0.21 EUR
371+0.19 EUR
538+0.13 EUR
618+0.12 EUR
658+0.11 EUR
Mindestbestellmenge: 264
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SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
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264+0.27 EUR
309+0.23 EUR
348+0.21 EUR
511+0.14 EUR
538+0.13 EUR
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2N7002DWK-7 DIODES INCORPORATED 2N7002DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
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2N7002DWQ-7-F 2N7002DWQ-7-F DIODES INCORPORATED 2N7002DW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Application: automotive industry
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2N7002DWS-7 DIODES INCORPORATED 2N7002DWS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
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FMMT619TC DIODES INCORPORATED FMMT619.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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10000+0.21 EUR
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ZXMN6A08KTC DIODES INCORPORATED ZXMN6A08K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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AP7341-30FS4-7 DIODES INCORPORATED AP7341.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; X2DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.27V
Output voltage: 3V
Output current: 0.3A
Case: X2DFN4
Mounting: SMD
Manufacturer series: AP7341
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: shutdown mode control input
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SMAJ130CA-13-F SMAJ130CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMA6J30CAQ-13 DIODES INCORPORATED SMA6J5.0CAQ-SMA6J70CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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5000+0.18 EUR
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S1J-13-F S1J-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
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39+1.83 EUR
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DMG7430LFG-7 DMG7430LFG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C82326CD4B98BF&compId=DMG7430LFG.pdf?ci_sign=46a2dbeca1b150f07f6094f0e0e434e8cf49cb4f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Kind of channel: enhancement
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228+0.31 EUR
261+0.27 EUR
321+0.22 EUR
397+0.18 EUR
421+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 186
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KBJ4005G KBJ4005G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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KBJ402G KBJ402G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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KBJ404G KBJ404G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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BCX5516TA BCX5516TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 60V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
auf Bestellung 1035 Stücke:
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179+0.4 EUR
261+0.27 EUR
428+0.17 EUR
983+0.073 EUR
1035+0.069 EUR
Mindestbestellmenge: 179
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BCX55TA BCX55TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 60V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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BCX55TC DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.066 EUR
Mindestbestellmenge: 4000
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DMC2004DWK-7 DMC2004DWK-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B2FB6F6A6F1BF&compId=DMC2004DWK-7.pdf?ci_sign=afbebe9ab6716376fede0e29698f74fc7980be84 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOT363
Polarisation: unipolar
Power dissipation: 0.25W
On-state resistance: 0.55/0.9Ω
Drain current: 0.43/-0.54A
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
176+0.41 EUR
224+0.32 EUR
338+0.21 EUR
358+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 125
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74LVC1G57FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FA40BE040D3&compId=74LVC1G57.pdf?ci_sign=834416900bfe1be6da3783bf8a3374bf602ae8aa Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Supply voltage: 1.65...5.5V DC
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74LVC1G57FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80B9E0D3&compId=74LVC1G57.pdf?ci_sign=8af9be2d1eac7732431ee81fca037aff0391b624 Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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74LVC1G57W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BAE0D3&compId=74LVC1G57.pdf?ci_sign=1893eb76823f157d2b718ef8f01a5cc5e6a21493 Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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SD05C-7 DIODES INCORPORATED SD05C.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 640W; 6V; 40A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 640W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Capacitance: 200pF
Produkt ist nicht verfügbar
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SMAJ14A-13-F SMAJ14A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3866 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
379+0.19 EUR
435+0.16 EUR
814+0.088 EUR
867+0.083 EUR
921+0.078 EUR
Mindestbestellmenge: 334
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SMAJ14CA-13-F SMAJ14CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3708 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
317+0.23 EUR
382+0.19 EUR
806+0.089 EUR
842+0.085 EUR
890+0.08 EUR
Mindestbestellmenge: 264
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SMBJ14CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
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BZT52C6V2S-7-F BZT52C6V2S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 2438 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
747+0.096 EUR
1516+0.047 EUR
2438+0.03 EUR
Mindestbestellmenge: 500
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MMSZ5232BS-7-F MMSZ5232BS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC255BC912F3D1&compId=mmsz52xxbs_ser.pdf?ci_sign=218b9115e55264e4f4c937414324349184fc03e4 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
Mindestbestellmenge: 417
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DDZ5V1BS-7 DDZ5V1BS-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD66400194B98BF&compId=DDZxxxS.pdf?ci_sign=5a592f3f576f597125a2ba554bf22bab1bcd9580 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 470 Stücke:
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470+0.16 EUR
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MMSZ5230BS-7-F MMSZ5230BS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC255BC912F3D1&compId=mmsz52xxbs_ser.pdf?ci_sign=218b9115e55264e4f4c937414324349184fc03e4 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Tolerance: ±5%
auf Bestellung 6430 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
544+0.13 EUR
633+0.11 EUR
776+0.092 EUR
1306+0.055 EUR
1832+0.039 EUR
2273+0.031 EUR
2404+0.03 EUR
Mindestbestellmenge: 500
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BZT52C3V9S-7-F BZT52C3V9S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 565 Stücke:
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556+0.13 EUR
Mindestbestellmenge: 556
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UDZ8V2B-7 UDZ8V2B-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EEE5ADC6D804143&compId=udz3v6b_15b_ser.pdf?ci_sign=8f811bae3629a1ef00a8a6fa90da64d4a1b8838c Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 4380 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
820+0.087 EUR
981+0.073 EUR
1397+0.051 EUR
1737+0.041 EUR
2794+0.026 EUR
2959+0.024 EUR
Mindestbestellmenge: 455
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DMN3008SCP10-7 DIODES INCORPORATED DMN3008SCP10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.61 EUR
Mindestbestellmenge: 3000
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74LVC541AQ20-13 DIODES INCORPORATED 74LVC541A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit,buffer; Ch: 8; IN: 10; CMOS; SMD; V-QFN4525-20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: V-QFN4525-20
Kind of output: push-pull
Supply voltage: 1.65...3.6V DC
Family: LVC
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Number of inputs: 10
Produkt ist nicht verfügbar
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LMV393M8-13 LMV393M8-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F4718282001E28&compId=LMV3xx.pdf?ci_sign=b4a18ac5a1f46262c64085b52789b425d42b6e8a Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Produkt ist nicht verfügbar
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BZT52C7V5-7-F BZT52C7V5-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 1742 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
610+0.12 EUR
705+0.1 EUR
845+0.085 EUR
1153+0.062 EUR
1690+0.042 EUR
1742+0.041 EUR
Mindestbestellmenge: 556
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DMC4029SSD-13 DMC4029SSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B5B084B72B1BF&compId=DMC4029SSD-13.pdf?ci_sign=e2277353b6106028baf363f0021aed1255723ec1 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.5/-9A
On-state resistance: 0.024/0.045Ω
Power dissipation: 1.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
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DMG1029SVQ-7 DMG1029SVQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B6DF947C011BF&compId=DMG1029SV-7.pdf?ci_sign=34e6d4d6832ed216cad05067e32d43d9440d3ab5 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 0.4/-0.28A
Power dissipation: 0.66W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 1.7/4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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DMC4029SK4-13 DIODES INCORPORATED DMC4029SK4.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.32 EUR
Mindestbestellmenge: 2500
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DDZ12B-7 DDZ12B-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
auf Bestellung 3373 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
736+0.097 EUR
1334+0.054 EUR
1713+0.042 EUR
2326+0.031 EUR
2464+0.029 EUR
Mindestbestellmenge: 500
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ZRB500F01TA ZRB500F01TA DIODES INCORPORATED ZRB500.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 1547 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
118+0.61 EUR
131+0.55 EUR
134+0.54 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 84
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ZXMP6A18DN8QTC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: ZXMP6A18DN8QTC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.84 EUR
Mindestbestellmenge: 2500
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DMTH48M3SFVWQ-13 DMTH48M3SFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-7 DMTH48M3SFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
Produkt ist nicht verfügbar
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BCX52TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX52TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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DSS2540M-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.082 EUR
Mindestbestellmenge: 3000
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ZXGD3003E6QTA ZXGD3003E6Q.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.41 EUR
Mindestbestellmenge: 3000
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ZXGD3004E6QTA
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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ZXMHC10A07N8TC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E27836A9B598BF&compId=ZXMHC10A07N8.pdf?ci_sign=d45da52fa173af0a6bbffdf7ee5dcfbf562892fc
ZXMHC10A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2063 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
70+1.03 EUR
86+0.84 EUR
91+0.79 EUR
500+0.76 EUR
Mindestbestellmenge: 59
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BZT52HC11WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHC86T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E0E0D3&compId=74AHC86.pdf?ci_sign=fc6955a127f689e8318d943d3bc768e9306ad43c
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Produkt ist nicht verfügbar
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74AHC1G32W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BAC092560D3&compId=74AHC1G32.pdf?ci_sign=d27a8986553bcec59373afa7c273b9c9306d954d
74AHC1G32W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
404+0.18 EUR
548+0.13 EUR
625+0.11 EUR
1417+0.05 EUR
1502+0.048 EUR
Mindestbestellmenge: 193
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FMMT617 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5618BF5C4B5EA&compId=FMMT617.pdf?ci_sign=1a2b192d78c4d8f4839921e9f8d36b87c3ce8def
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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DMP2900UT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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GBJ606-F ds21216.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMTH4004LPS-13 DMTH4004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMTH4004SPS-13 DMTH4004SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMTH4004LPSQ-13 DMTH4004LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4004SPSQ-13 DMTH4004SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ16CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ60CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ60CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
334+0.21 EUR
371+0.19 EUR
538+0.13 EUR
618+0.12 EUR
658+0.11 EUR
Mindestbestellmenge: 264
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SMBJ6.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ6.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
309+0.23 EUR
348+0.21 EUR
511+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWK-7 2N7002DWK.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Produkt ist nicht verfügbar
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2N7002DWQ-7-F 2N7002DW.pdf
2N7002DWQ-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002DWS-7 2N7002DWS.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Produkt ist nicht verfügbar
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FMMT619TC FMMT619.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.21 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A08KTC ZXMN6A08K.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.37 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
AP7341-30FS4-7 AP7341.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; X2DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.27V
Output voltage: 3V
Output current: 0.3A
Case: X2DFN4
Mounting: SMD
Manufacturer series: AP7341
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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SMAJ130CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ130CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMA6J30CAQ-13 SMA6J5.0CAQ-SMA6J70CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.18 EUR
Mindestbestellmenge: 5000
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S1J-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1J-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.83 EUR
Mindestbestellmenge: 39
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DMG7430LFG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C82326CD4B98BF&compId=DMG7430LFG.pdf?ci_sign=46a2dbeca1b150f07f6094f0e0e434e8cf49cb4f
DMG7430LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1872 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
228+0.31 EUR
261+0.27 EUR
321+0.22 EUR
397+0.18 EUR
421+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 186
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KBJ4005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ4005G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBJ402G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ402G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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KBJ404G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ404G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BCX5516TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX5516TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 60V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
261+0.27 EUR
428+0.17 EUR
983+0.073 EUR
1035+0.069 EUR
Mindestbestellmenge: 179
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BCX55TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX55TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 60V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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BCX55TC
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.066 EUR
Mindestbestellmenge: 4000
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DMC2004DWK-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B2FB6F6A6F1BF&compId=DMC2004DWK-7.pdf?ci_sign=afbebe9ab6716376fede0e29698f74fc7980be84
DMC2004DWK-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOT363
Polarisation: unipolar
Power dissipation: 0.25W
On-state resistance: 0.55/0.9Ω
Drain current: 0.43/-0.54A
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
176+0.41 EUR
224+0.32 EUR
338+0.21 EUR
358+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 125
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74LVC1G57FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FA40BE040D3&compId=74LVC1G57.pdf?ci_sign=834416900bfe1be6da3783bf8a3374bf602ae8aa
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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74LVC1G57FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80B9E0D3&compId=74LVC1G57.pdf?ci_sign=8af9be2d1eac7732431ee81fca037aff0391b624
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G57W6-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BAE0D3&compId=74LVC1G57.pdf?ci_sign=1893eb76823f157d2b718ef8f01a5cc5e6a21493
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD05C-7 SD05C.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 640W; 6V; 40A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 640W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Capacitance: 200pF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ14A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ14A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3866 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
379+0.19 EUR
435+0.16 EUR
814+0.088 EUR
867+0.083 EUR
921+0.078 EUR
Mindestbestellmenge: 334
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SMAJ14CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ14CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3708 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
317+0.23 EUR
382+0.19 EUR
806+0.089 EUR
842+0.085 EUR
890+0.08 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ14CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C6V2S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C6V2S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 2438 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
747+0.096 EUR
1516+0.047 EUR
2438+0.03 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5232BS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC255BC912F3D1&compId=mmsz52xxbs_ser.pdf?ci_sign=218b9115e55264e4f4c937414324349184fc03e4
MMSZ5232BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
Mindestbestellmenge: 417
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DDZ5V1BS-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD66400194B98BF&compId=DDZxxxS.pdf?ci_sign=5a592f3f576f597125a2ba554bf22bab1bcd9580
DDZ5V1BS-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
470+0.16 EUR
Mindestbestellmenge: 470
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MMSZ5230BS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC255BC912F3D1&compId=mmsz52xxbs_ser.pdf?ci_sign=218b9115e55264e4f4c937414324349184fc03e4
MMSZ5230BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Tolerance: ±5%
auf Bestellung 6430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
544+0.13 EUR
633+0.11 EUR
776+0.092 EUR
1306+0.055 EUR
1832+0.039 EUR
2273+0.031 EUR
2404+0.03 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C3V9S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C3V9S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
Mindestbestellmenge: 556
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UDZ8V2B-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EEE5ADC6D804143&compId=udz3v6b_15b_ser.pdf?ci_sign=8f811bae3629a1ef00a8a6fa90da64d4a1b8838c
UDZ8V2B-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 4380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
820+0.087 EUR
981+0.073 EUR
1397+0.051 EUR
1737+0.041 EUR
2794+0.026 EUR
2959+0.024 EUR
Mindestbestellmenge: 455
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DMN3008SCP10-7 DMN3008SCP10.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.61 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74LVC541AQ20-13 74LVC541A.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit,buffer; Ch: 8; IN: 10; CMOS; SMD; V-QFN4525-20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: V-QFN4525-20
Kind of output: push-pull
Supply voltage: 1.65...3.6V DC
Family: LVC
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Number of inputs: 10
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LMV393M8-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F4718282001E28&compId=LMV3xx.pdf?ci_sign=b4a18ac5a1f46262c64085b52789b425d42b6e8a
LMV393M8-13
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C7V5-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C7V5-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 1742 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
610+0.12 EUR
705+0.1 EUR
845+0.085 EUR
1153+0.062 EUR
1690+0.042 EUR
1742+0.041 EUR
Mindestbestellmenge: 556
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DMC4029SSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B5B084B72B1BF&compId=DMC4029SSD-13.pdf?ci_sign=e2277353b6106028baf363f0021aed1255723ec1
DMC4029SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.5/-9A
On-state resistance: 0.024/0.045Ω
Power dissipation: 1.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
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DMG1029SVQ-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B6DF947C011BF&compId=DMG1029SV-7.pdf?ci_sign=34e6d4d6832ed216cad05067e32d43d9440d3ab5
DMG1029SVQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 0.4/-0.28A
Power dissipation: 0.66W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 1.7/4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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DMC4029SK4-13 DMC4029SK4.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.32 EUR
Mindestbestellmenge: 2500
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DDZ12B-7 DDZ5V1B-DDZ43.pdf
DDZ12B-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
auf Bestellung 3373 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
736+0.097 EUR
1334+0.054 EUR
1713+0.042 EUR
2326+0.031 EUR
2464+0.029 EUR
Mindestbestellmenge: 500
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ZRB500F01TA ZRB500.pdf
ZRB500F01TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 1547 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
118+0.61 EUR
131+0.55 EUR
134+0.54 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 84
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