Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78996) > Seite 1313 nach 1317
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| AM4962GSTR-G1 | DIODES INCORPORATED |
 Category: Motor and PWM driversDescription: IC: driver; motor controller; SSOP16; 3.5÷16VDC Mounting: SMD Operating temperature: -30...90°C Case: SSOP16 Operating voltage: 3.5...16V DC Type of integrated circuit: driver Kind of integrated circuit: motor controller |
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| AM4967GSTR-G1 | DIODES INCORPORATED |
Category: Motor and PWM drivers Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC Mounting: SMD Operating temperature: -30...105°C Case: SSOP16 Operating voltage: 5.5...16V DC Type of integrated circuit: driver Kind of integrated circuit: motor controller |
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| AM4967RGSTR-G1 | DIODES INCORPORATED |
Category: Motor and PWM drivers Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC Mounting: SMD Operating temperature: -30...105°C Case: SSOP16 Operating voltage: 5.5...16V DC Type of integrated circuit: driver Kind of integrated circuit: motor controller |
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| AS321KTR-E1 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 1; SOT25; 3÷36VDC; reel,tape Mounting: SMT Case: SOT25 Kind of package: reel; tape Type of integrated circuit: operational amplifier Operating temperature: -40...85°C Input offset current: 100nA Input bias current: 0.2µA Number of channels: 1 Voltage supply range: 3...36V DC Input offset voltage: 7mV |
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| AP39811BS7-13 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC switcher; PWM controller Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...85°C Topology: flyback Supply voltage: 10...28V Duty cycle factor: 50...65% Kind of package: reel; tape |
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| AP3981B2S7-13 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC switcher; PWM controller Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...85°C Topology: flyback Supply voltage: 10...28V Duty cycle factor: 45...85% Kind of package: reel; tape |
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AP3783BK6TR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC switcher,PWM controller; 60kHz; Ch: 1; SOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC switcher; PWM controller Frequency: 60kHz Case: SOT26 Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
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AP3783RCK6TR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC switcher; PWM controller Frequency: 80kHz Case: SOT26 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 25V |
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| AP3781S-13 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; Ch: 1; SO8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Case: SO8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 10...30V DC Number of channels: 1 Kind of package: reel; tape |
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AP3783RBK6TR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC switcher; PWM controller Frequency: 80kHz Case: SOT26 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 25V |
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AP3785TMTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC switcher; PWM controller Frequency: 80kHz Case: SO8 Mounting: SMD Operating temperature: -40...85°C |
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| PD3Z284C5V6-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; PowerDI®323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: PowerDI®323 Semiconductor structure: single diode |
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| ZTX694B | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 0.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
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| ZTX694BSTZ | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 0.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
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| P4SMAJ6.0ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 0.4mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| AL8812FDF-13 | DIODES INCORPORATED |
Category: LED drivers Description: Driver; DC/DC converter; U-DFN6040-12; SMD; Topology: boost,buck Operating temperature: -40...105°C Case: U-DFN6040-12 Operating voltage: 3...20V DC Type of integrated circuit: driver Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: boost; buck Mounting: SMD |
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| AL8862QFGEAW-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; buck; LED driver; V-DFN3030-8; 1A; Ch: 1; 5÷55VDC; 97% Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED driver Case: V-DFN3030-8 Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 5...55V DC Kind of package: reel; tape Efficiency: 97% Output current: 1A |
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DMN3023L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 18.4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 44A Mounting: SMD Case: SOT23 |
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BCX5216QTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: PNP Application: automotive industry Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 1000pcs. Mounting: SMD |
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BCX5216TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 1000pcs. Mounting: SMD |
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| BCX5216TC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 4000pcs. Mounting: SMD |
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ZTX853 | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: bulk Quantity in set/package: 4000pcs. |
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| ZTX853STZ | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
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| APX358SG-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; 2.5÷5.5V; Ch: 2; SOP8; reel,tape Kind of package: reel; tape Operating temperature: -40...85°C Mounting: SMT Case: SOP8 Operating voltage: 2.5...5.5V Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1MHz Input offset voltage: 7mV Integrated circuit features: low voltage; rail-to-rail Slew rate: 1V/μs Input bias current: 0.25µA |
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| HDS20M-13 | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 55A; HDS Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 55A Case: HDS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
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DMPH6050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH6050SFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.2A Pulsed drain current: -32A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH6050SFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.2A Pulsed drain current: -32A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH6050SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6A Pulsed drain current: -40A Power dissipation: 3.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 25nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH6050SPD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Pulsed drain current: -40A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH6050SPDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Pulsed drain current: -40A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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DMPH6050SSDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.7A Pulsed drain current: -35A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH3010LPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 1.5W; PowerDI®5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Power dissipation: 1.5W Case: PowerDI®5060-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH1006UPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -60A Pulsed drain current: -140A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±8V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 124nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH1006UPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -60A Pulsed drain current: -140A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±8V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 124nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH3010LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Pulsed drain current: -100A Power dissipation: 3.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 139nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH3010LPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Pulsed drain current: -100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 139nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH4011SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -56A Pulsed drain current: -316A Power dissipation: 3.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 104nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH4011SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -56A Pulsed drain current: -316A Power dissipation: 3.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 104nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH4015SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -10A Pulsed drain current: -100A Power dissipation: 3.3W Case: TO252 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH4015SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -10A Pulsed drain current: -100A Power dissipation: 3.3W Case: TO252 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH4015SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -9A Pulsed drain current: -100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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DMPH4015SSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.1A Pulsed drain current: -85A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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DMPH4015SSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.1A Pulsed drain current: -85A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH4023SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -35A Pulsed drain current: -70A Power dissipation: 3.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 18.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH4023SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -35A Pulsed drain current: -70A Power dissipation: 3.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 18.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH4025SFVWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.3A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 38.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH4025SFVWQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.3A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 38.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH4029LFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.7A Pulsed drain current: -88A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH4029LFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.7A Pulsed drain current: -88A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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| DMPH4029LFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.7A Pulsed drain current: -88A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH4029LFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.7A Pulsed drain current: -88A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMPH6023SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.1A Pulsed drain current: -60A Power dissipation: 3.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMPH6023SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.1A Pulsed drain current: -60A Power dissipation: 3.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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|
DMPH6250S-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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|
|
BAT400D-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape; 450mW Semiconductor structure: single diode Max. off-state voltage: 40V Load current: 0.5A Case: SOT23 Max. forward voltage: 0.55V Max. forward impulse current: 3A Capacitance: 125pF Leakage current: 50µA Power dissipation: 0.45W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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| DMT4002LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 116.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD |
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 |
DMT4003SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB Case: TO220AB Drain-source voltage: 40V Drain current: 164A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: tube Gate charge: 75.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 350A Mounting: THT |
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| DMT4004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 21A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 82.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD |
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|
DMT4005SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB Case: TO220AB Drain-source voltage: 40V Drain current: 85A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Gate charge: 49.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: THT |
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| AM4962GSTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 3.5÷16VDC
Mounting: SMD
Operating temperature: -30...90°C
Case: SSOP16
Operating voltage: 3.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 3.5÷16VDC
Mounting: SMD
Operating temperature: -30...90°C
Case: SSOP16
Operating voltage: 3.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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| AM4967GSTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Mounting: SMD
Operating temperature: -30...105°C
Case: SSOP16
Operating voltage: 5.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Mounting: SMD
Operating temperature: -30...105°C
Case: SSOP16
Operating voltage: 5.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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| AM4967RGSTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Mounting: SMD
Operating temperature: -30...105°C
Case: SSOP16
Operating voltage: 5.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Mounting: SMD
Operating temperature: -30...105°C
Case: SSOP16
Operating voltage: 5.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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| AS321KTR-E1 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; SOT25; 3÷36VDC; reel,tape
Mounting: SMT
Case: SOT25
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input offset current: 100nA
Input bias current: 0.2µA
Number of channels: 1
Voltage supply range: 3...36V DC
Input offset voltage: 7mV
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; SOT25; 3÷36VDC; reel,tape
Mounting: SMT
Case: SOT25
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input offset current: 100nA
Input bias current: 0.2µA
Number of channels: 1
Voltage supply range: 3...36V DC
Input offset voltage: 7mV
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| AP39811BS7-13 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 10...28V
Duty cycle factor: 50...65%
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 10...28V
Duty cycle factor: 50...65%
Kind of package: reel; tape
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| AP3981B2S7-13 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 10...28V
Duty cycle factor: 45...85%
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 10...28V
Duty cycle factor: 45...85%
Kind of package: reel; tape
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| AP3783BK6TR-G1 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 60kHz; Ch: 1; SOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 60kHz
Case: SOT26
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 60kHz; Ch: 1; SOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 60kHz
Case: SOT26
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| AP3783RCK6TR-G1 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 25V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 25V
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| AP3781S-13 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; Ch: 1; SO8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 10...30V DC
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; Ch: 1; SO8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 10...30V DC
Number of channels: 1
Kind of package: reel; tape
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| AP3783RBK6TR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 25V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 25V
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| AP3785TMTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
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| PD3Z284C5V6-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; PowerDI®323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; PowerDI®323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®323
Semiconductor structure: single diode
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| ZTX694B |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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| ZTX694BSTZ |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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| P4SMAJ6.0ADF-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| AL8812FDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter; U-DFN6040-12; SMD; Topology: boost,buck
Operating temperature: -40...105°C
Case: U-DFN6040-12
Operating voltage: 3...20V DC
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: boost; buck
Mounting: SMD
Category: LED drivers
Description: Driver; DC/DC converter; U-DFN6040-12; SMD; Topology: boost,buck
Operating temperature: -40...105°C
Case: U-DFN6040-12
Operating voltage: 3...20V DC
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: boost; buck
Mounting: SMD
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| AL8862QFGEAW-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck; LED driver; V-DFN3030-8; 1A; Ch: 1; 5÷55VDC; 97%
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: V-DFN3030-8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 5...55V DC
Kind of package: reel; tape
Efficiency: 97%
Output current: 1A
Category: LED drivers
Description: IC: driver; buck; LED driver; V-DFN3030-8; 1A; Ch: 1; 5÷55VDC; 97%
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: V-DFN3030-8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 5...55V DC
Kind of package: reel; tape
Efficiency: 97%
Output current: 1A
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| DMN3023L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 18.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 18.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Case: SOT23
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| BCX5216QTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Mounting: SMD
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| BCX5216TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Mounting: SMD
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| BCX5216TC |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 4000pcs.
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 4000pcs.
Mounting: SMD
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| ZTX853 |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Quantity in set/package: 4000pcs.
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Quantity in set/package: 4000pcs.
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| ZTX853STZ |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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| APX358SG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.5÷5.5V; Ch: 2; SOP8; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Mounting: SMT
Case: SOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1MHz
Input offset voltage: 7mV
Integrated circuit features: low voltage; rail-to-rail
Slew rate: 1V/μs
Input bias current: 0.25µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.5÷5.5V; Ch: 2; SOP8; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Mounting: SMT
Case: SOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1MHz
Input offset voltage: 7mV
Integrated circuit features: low voltage; rail-to-rail
Slew rate: 1V/μs
Input bias current: 0.25µA
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| HDS20M-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 55A; HDS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 55A
Case: HDS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 55A; HDS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 55A
Case: HDS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
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| DMPH6050SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH6050SFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH6050SFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH6050SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 3.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 3.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH6050SPD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH6050SPDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH6050SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.7A
Pulsed drain current: -35A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.7A
Pulsed drain current: -35A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH3010LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 1.5W; PowerDI®5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 1.5W
Case: PowerDI®5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 1.5W; PowerDI®5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 1.5W
Case: PowerDI®5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH1006UPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -60A
Pulsed drain current: -140A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 124nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -60A
Pulsed drain current: -140A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 124nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH1006UPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -60A
Pulsed drain current: -140A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 124nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -60A
Pulsed drain current: -140A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 124nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH3010LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH3010LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4011SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -56A
Pulsed drain current: -316A
Power dissipation: 3.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -56A
Pulsed drain current: -316A
Power dissipation: 3.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH4011SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -56A
Pulsed drain current: -316A
Power dissipation: 3.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -56A
Pulsed drain current: -316A
Power dissipation: 3.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4015SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| DMPH4015SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4015SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -9A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -9A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4015SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH4015SSSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4023SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH4023SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4025SFVWQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4025SFVWQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4029LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH4029LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMPH4029LFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH4029LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH6023SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.1A
Pulsed drain current: -60A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.1A
Pulsed drain current: -60A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMPH6023SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.1A
Pulsed drain current: -60A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.1A
Pulsed drain current: -60A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH6250S-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| BAT400D-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape; 450mW
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 0.5A
Case: SOT23
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Capacitance: 125pF
Leakage current: 50µA
Power dissipation: 0.45W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape; 450mW
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 0.5A
Case: SOT23
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Capacitance: 125pF
Leakage current: 50µA
Power dissipation: 0.45W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| DMT4002LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
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| DMT4003SCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 164A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: tube
Gate charge: 75.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 164A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: tube
Gate charge: 75.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
Mounting: THT
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| DMT4004LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 21A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 21A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
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| DMT4005SCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: THT
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