Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78527) > Seite 1309 nach 1309
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ZXTD720MCTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 2.45W Case: DFN3020B-8 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 190MHz |
auf Bestellung 2991 Stücke: Lieferzeit 14-21 Tag (e) |
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SBR6200CTL-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape Case: DPAK Max. off-state voltage: 200V Max. forward voltage: 0.85V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 80A Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RDBF310-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 3A Max. forward impulse current: 100A Case: DBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SMBJ150A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 2.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1675 Stücke: Lieferzeit 14-21 Tag (e) |
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FCX491ATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89 Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 300...900 Collector current: 1A Type of transistor: NPN Polarisation: bipolar Quantity in set/package: 1000pcs. |
auf Bestellung 669 Stücke: Lieferzeit 14-21 Tag (e) |
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FCX591ATA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89 Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 30...800 Collector current: 1A Type of transistor: PNP Polarisation: bipolar Quantity in set/package: 1000pcs. |
auf Bestellung 964 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVP3306A | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -160mA Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTL432BFFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23F Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
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SMBJ120A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 3.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DDTD113ZC-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Current gain: 56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMN30H14DLY-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89 On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1A Mounting: SMD Case: SOT89 Drain-source voltage: 300V Drain current: 0.16A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ZXMN6A08E6TA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A08GQTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A08GQTC | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ200A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 200V Breakdown voltage: 224...247V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SBRT10U60D1Q-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A Type of diode: Schottky rectifying Case: TO252/DPAK Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.52V Leakage current: 80µA Max. forward impulse current: 140A Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP61302QZ6-7 | DIODES INCORPORATED |
![]() Description: IC: PMIC Type of integrated circuit: PMIC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2DC4617R-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT523 Current gain: 180...390 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 180MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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SMCJ13A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 69.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MMDT3904Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MMDT3904VC-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT563 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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GBU806 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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AP1501-K5G-13 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 1.23...37V DC Output current: 3A Case: TO263-5 Mounting: SMD Frequency: 150kHz Topology: buck Operating temperature: -20...85°C Kind of package: reel; tape Efficiency: 73% |
Produkt ist nicht verfügbar |
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AP7167-FNG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1.2A; DFN10 Mounting: SMD Operating temperature: -40...85°C Case: DFN10 Tolerance: ±3% Output voltage: 0.8...5V Output current: 1.2A Voltage drop: 0.8V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.2...5.5V Kind of package: reel; tape Manufacturer series: AP7167 Kind of voltage regulator: adjustable; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ZUMT617TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 15V; 1.5A; 500mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 1.5A Power dissipation: 0.5W Case: SOT323 Pulsed collector current: 5A Current gain: 30...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PDU540-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying Type of diode: rectifying |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD340-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 15W Case: DPAK; TO252 Current gain: 30...240 Mounting: SMD Pulsed collector current: 0.75A Frequency: 10MHz Kind of package: reel; tape Quantity in set/package: 2500pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
74HCT164T14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: push-pull Number of channels: 8 Family: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
ZXTD720MCTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2.45W
Case: DFN3020B-8
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 190MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2.45W
Case: DFN3020B-8
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 190MHz
auf Bestellung 2991 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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53+ | 1.36 EUR |
78+ | 0.93 EUR |
135+ | 0.53 EUR |
143+ | 0.50 EUR |
500+ | 0.49 EUR |
1000+ | 0.48 EUR |
SBR6200CTL-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Case: DPAK
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Case: DPAK
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RDBF310-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ150A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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186+ | 0.39 EUR |
262+ | 0.27 EUR |
329+ | 0.22 EUR |
468+ | 0.15 EUR |
667+ | 0.11 EUR |
705+ | 0.10 EUR |
FCX491ATA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 300...900
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 300...900
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
Quantity in set/package: 1000pcs.
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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109+ | 0.66 EUR |
140+ | 0.51 EUR |
192+ | 0.37 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
FCX591ATA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 30...800
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 30...800
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 1000pcs.
auf Bestellung 964 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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109+ | 0.66 EUR |
157+ | 0.46 EUR |
196+ | 0.37 EUR |
253+ | 0.28 EUR |
268+ | 0.27 EUR |
500+ | 0.26 EUR |
ZVP3306A |
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Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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61+ | 1.17 EUR |
82+ | 0.87 EUR |
159+ | 0.45 EUR |
168+ | 0.43 EUR |
ZTL432BFFTA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ120A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTD113ZC-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN30H14DLY-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1A
Mounting: SMD
Case: SOT89
Drain-source voltage: 300V
Drain current: 0.16A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1A
Mounting: SMD
Case: SOT89
Drain-source voltage: 300V
Drain current: 0.16A
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ZXMN6A08E6TA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.44 EUR |
ZXMN6A08GQTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.50 EUR |
ZXMN6A08GQTC |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.50 EUR |
SMBJ200A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SBRT10U60D1Q-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
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AP61302QZ6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.25 EUR |
2DC4617R-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT523
Current gain: 180...390
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT523
Current gain: 180...390
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ13A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MMDT3904Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMDT3904VC-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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GBU806 |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
60+ | 1.20 EUR |
66+ | 1.09 EUR |
AP1501-K5G-13 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
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AP7167-FNG-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1.2A; DFN10
Mounting: SMD
Operating temperature: -40...85°C
Case: DFN10
Tolerance: ±3%
Output voltage: 0.8...5V
Output current: 1.2A
Voltage drop: 0.8V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.2...5.5V
Kind of package: reel; tape
Manufacturer series: AP7167
Kind of voltage regulator: adjustable; LDO; linear
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1.2A; DFN10
Mounting: SMD
Operating temperature: -40...85°C
Case: DFN10
Tolerance: ±3%
Output voltage: 0.8...5V
Output current: 1.2A
Voltage drop: 0.8V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.2...5.5V
Kind of package: reel; tape
Manufacturer series: AP7167
Kind of voltage regulator: adjustable; LDO; linear
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ZUMT617TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 1.5A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 5A
Current gain: 30...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 1.5A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 5A
Current gain: 30...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
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PDU540-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.56 EUR |
MJD340-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 30...240
Mounting: SMD
Pulsed collector current: 0.75A
Frequency: 10MHz
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 30...240
Mounting: SMD
Pulsed collector current: 0.75A
Frequency: 10MHz
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Produkt ist nicht verfügbar
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74HCT164T14-13 |
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Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of channels: 8
Family: HCT
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of channels: 8
Family: HCT
Produkt ist nicht verfügbar
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