Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78996) > Seite 1309 nach 1317
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AP2127K-3.0TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input Manufacturer series: AP2127 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
DDZ5V6B-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±2.5% Semiconductor structure: single diode Leakage current: 50nA |
auf Bestellung 4087 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
UDZ5V6B-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD323 Mounting: SMD Semiconductor structure: single diode |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
AZ23C5V6-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double |
auf Bestellung 2130 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
AP2171DWG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT25 On-state resistance: 95mΩ Supply voltage: 2.7...5.5V DC Active logical level: high Kind of integrated circuit: high-side; USB switch Kind of package: reel; tape |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
AP2171MPG-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: MSOP8EP Supply voltage: 2.7...5.5V DC On-state resistance: 95mΩ Output current: 1A Type of integrated circuit: power switch Number of channels: 1 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
![]() |
BSR43TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89 Frequency: 100MHz Mounting: SMD Collector-emitter voltage: 80V Current gain: 30...300 Collector current: 1A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 1000pcs. Case: SOT89 |
auf Bestellung 2356 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
KBP08G | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ZVN4525GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.31A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±40V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.44A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
BZX84C39-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 39V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 3620 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
BZX84C39S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 39V; SMD; reel,tape; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 39V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
BZX84C39W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 39V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
AP7361C-Y5-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; SOT89-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.7V Output voltage: 0.8...5V Output current: 1A Case: SOT89-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.2...6V Integrated circuit features: shutdown mode control input Manufacturer series: AP7361C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP7361C-25Y5-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 2.5V Output current: 1A Case: SOT89-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.2...6V Integrated circuit features: shutdown mode control input Manufacturer series: AP7361C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP7361C-33Y5-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 3.3V Output current: 1A Case: SOT89-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.2...6V Integrated circuit features: shutdown mode control input Manufacturer series: AP7361C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP7361C-12Y5-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 1.2V Output current: 1A Case: SOT89-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.2...6V Integrated circuit features: shutdown mode control input Manufacturer series: AP7361C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BAS16VVQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: small signal Case: SOT563 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BAS16VV-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: small signal Case: SOT563 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
D6V3H1U2LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape Case: 0201; 0603 Max. off-state voltage: 6.3V Semiconductor structure: unidirectional Max. forward impulse current: 90A Breakdown voltage: 6.5V Leakage current: 0.5µA Kind of package: reel; tape Type of diode: TVS Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
D3V3S1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape Case: 0201; 0603 Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Max. forward impulse current: 200A Breakdown voltage: 3.8V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
D5V0M5B6LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape Case: U-DFN1616-6 Capacitance: 40pF Max. off-state voltage: 5V Max. forward impulse current: 12A Breakdown voltage: 5.5V Leakage current: 0.1µA Number of channels: 5 Kind of package: reel; tape Type of diode: TVS array Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
D5V0S1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape Case: 0201; 0603 Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 150A Breakdown voltage: 6V Leakage current: 0.5µA Kind of package: reel; tape Type of diode: TVS Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
D12V0H1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1kW; 13V; 50A; unidirectional; 0201,0603; reel,tape Case: 0201; 0603 Max. off-state voltage: 12V Semiconductor structure: unidirectional Max. forward impulse current: 50A Breakdown voltage: 13V Leakage current: 0.1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1kW Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
D22V0H1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape Case: 0201; 0603 Max. off-state voltage: 22V Semiconductor structure: unidirectional Max. forward impulse current: 28A Breakdown voltage: 23.5V Leakage current: 0.2µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1kW Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
D33V0S1U2LP1608-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 36V; 19A; unidirectional; U-DFN1608-2; reel,tape Case: U-DFN1608-2 Max. off-state voltage: 33V Semiconductor structure: unidirectional Max. forward impulse current: 19A Breakdown voltage: 36V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DRTR5V0U4LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape Case: U-DFN1616-6 Capacitance: 1.5pF Max. off-state voltage: 5.5V Breakdown voltage: 6V Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape Type of diode: TVS array Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
ZTX453 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1W Case: TO92 Current gain: 40...200 Mounting: THT Kind of package: bulk Frequency: 150MHz Quantity in set/package: 4000pcs. |
auf Bestellung 2581 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
ZTX453STZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1W Case: TO92 Current gain: 40...200 Mounting: THT Kind of package: Ammo Pack Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP2281-1FMG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 2A Case: U-DFN2018-6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Active logical level: high Kind of output: P-Channel On-state resistance: 80mΩ Supply voltage: 2.7...5.5V DC Kind of integrated circuit: high-side; USB switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
SDT20A120CT | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 120V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.79V |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
DT2042-04SO-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; 10A; SOT23-6; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.5V Case: SOT23-6 Kind of package: reel; tape Capacitance: 1.5pF Max. forward impulse current: 10A Breakdown voltage: 6V Leakage current: 1µA Number of channels: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DT2042-04TS-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; 10A; TSOT26; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.5V Case: TSOT26 Kind of package: reel; tape Capacitance: 1.5pF Max. forward impulse current: 10A Breakdown voltage: 6V Leakage current: 1µA Number of channels: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SDT20A100CT | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 200A Leakage current: 20mA Max. forward voltage: 0.67V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SDT20B100D1-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 100A Leakage current: 16mA Max. forward voltage: 0.82V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMN4008LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 15.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 74nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMN4008LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 40V Drain current: 15.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 74nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMTH4008LFDFW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 7 inch reel; tape Drain-source voltage: 40V Drain current: 8.2A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 2.35W Polarisation: unipolar Gate charge: 14.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMTH4008LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 10.2A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.99W Polarisation: unipolar Gate charge: 15.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMTH4008LFDFWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 8.2A On-state resistance: 18mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.35W Polarisation: unipolar Gate charge: 14.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMTH4008LFDFWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 7 inch reel; tape Drain-source voltage: 40V Drain current: 8.2A On-state resistance: 18mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.35W Polarisation: unipolar Gate charge: 14.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMTH4008LPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 10.2A On-state resistance: 13mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.99W Polarisation: unipolar Gate charge: 15.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
SMBJ17CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 18.9÷21.7V; 21.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17V Breakdown voltage: 18.9...21.7V Max. forward impulse current: 21.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DMP1045U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
1N5407G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Capacitance: 40pF Reverse recovery time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
BCX38C | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk Current gain: 5000...10000 Pulsed collector current: 2A Quantity in set/package: 4000pcs. |
auf Bestellung 3974 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
FZT1048ATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 17.5V Collector current: 5A Type of transistor: NPN Power dissipation: 3W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 1000pcs. Case: SOT223 |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
SMBJ100A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
RS1G-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RS1GB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DMP2075UFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Drain current: -3A On-state resistance: 137mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -25A Mounting: SMD Case: U-DFN2020-6 Drain-source voltage: -20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP61302QZ6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Operating temperature: -40...85°C Case: SOT563 Frequency: 2.2MHz Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Application: automotive industry Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
1N5401G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 125A; DO201AD; 2us Mounting: THT Case: DO201AD Capacitance: 40pF Max. off-state voltage: 50V Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 2µs Max. forward impulse current: 125A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
B350AF-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Max. forward impulse current: 80A Semiconductor structure: single diode Case: SMA flat Mounting: SMD Leakage current: 24mA Kind of package: reel; tape Load current: 3A Capacitance: 110pF Max. forward voltage: 0.65V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
B350AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW Type of diode: Schottky rectifying Max. off-state voltage: 50V Max. forward impulse current: 80A Semiconductor structure: single diode Case: SMA Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Load current: 3A Capacitance: 200pF Application: automotive industry Power dissipation: 0.85W Max. forward voltage: 0.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
DFLZ24-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Kind of package: reel; tape Case: PowerDI®123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 2315 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
DGD0590AFU-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: VQFN8 Output current: -3...1A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 27ns Pulse fall time: 29ns Kind of package: reel; tape Supply voltage: 4.5...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DGD0507AFN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side Case: WDFN3030-10 Output current: -2...1.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 25ns Kind of package: reel; tape Supply voltage: 8...14V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
DDZ20ASF-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; single diode; 70nA Leakage current: 70nA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD323F Semiconductor structure: single diode Zener voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DMHT6016LFJ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W Drain-source voltage: 60V Drain current: 11.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 2.7W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A Mounting: SMD Case: V-DFN5045-12 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DDTC123YE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 33 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
AP2127K-3.0TRG1 |
![]() |
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP2127
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP2127
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDZ5V6B-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Leakage current: 50nA
auf Bestellung 4087 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
562+ | 0.13 EUR |
740+ | 0.097 EUR |
1257+ | 0.057 EUR |
2253+ | 0.032 EUR |
2381+ | 0.03 EUR |
UDZ5V6B-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
550+ | 0.13 EUR |
672+ | 0.11 EUR |
1270+ | 0.056 EUR |
1701+ | 0.042 EUR |
1799+ | 0.04 EUR |
AZ23C5V6-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
589+ | 0.12 EUR |
738+ | 0.097 EUR |
817+ | 0.088 EUR |
1397+ | 0.051 EUR |
1475+ | 0.048 EUR |
AP2171DWG-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
256+ | 0.28 EUR |
400+ | 0.18 EUR |
424+ | 0.17 EUR |
1000+ | 0.16 EUR |
AP2171MPG-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
112+ | 0.64 EUR |
252+ | 0.28 EUR |
266+ | 0.27 EUR |
BSR43TA |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Frequency: 100MHz
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Case: SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Frequency: 100MHz
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Case: SOT89
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
180+ | 0.4 EUR |
230+ | 0.31 EUR |
363+ | 0.2 EUR |
385+ | 0.19 EUR |
KBP08G |
![]() |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZVN4525GTA |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.31A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.31A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.44A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C39-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 39V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 39V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 3620 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
554+ | 0.13 EUR |
944+ | 0.076 EUR |
1866+ | 0.038 EUR |
2858+ | 0.025 EUR |
3031+ | 0.024 EUR |
BZX84C39S-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 39V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 39V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C39W-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 39V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 39V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP7361C-Y5-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; SOT89-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.7V
Output voltage: 0.8...5V
Output current: 1A
Case: SOT89-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; SOT89-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.7V
Output voltage: 0.8...5V
Output current: 1A
Case: SOT89-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP7361C-25Y5-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 1A
Case: SOT89-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 1A
Case: SOT89-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP7361C-33Y5-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 1A
Case: SOT89-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 1A
Case: SOT89-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP7361C-12Y5-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.2V
Output current: 1A
Case: SOT89-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.2V
Output current: 1A
Case: SOT89-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS16VVQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS16VV-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D6V3H1U2LP16-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 6.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 6.5V
Leakage current: 0.5µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 6.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 6.5V
Leakage current: 0.5µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D3V3S1U2LP1610-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 200A
Breakdown voltage: 3.8V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 200A
Breakdown voltage: 3.8V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D5V0M5B6LP16-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape
Case: U-DFN1616-6
Capacitance: 40pF
Max. off-state voltage: 5V
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 5
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape
Case: U-DFN1616-6
Capacitance: 40pF
Max. off-state voltage: 5V
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 5
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D5V0S1U2LP1610-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 150A
Breakdown voltage: 6V
Leakage current: 0.5µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 150A
Breakdown voltage: 6V
Leakage current: 0.5µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D12V0H1U2LP1610-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 13V; 50A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Max. forward impulse current: 50A
Breakdown voltage: 13V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 13V; 50A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Max. forward impulse current: 50A
Breakdown voltage: 13V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D22V0H1U2LP1610-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 28A
Breakdown voltage: 23.5V
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape
Case: 0201; 0603
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 28A
Breakdown voltage: 23.5V
Leakage current: 0.2µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D33V0S1U2LP1608-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 36V; 19A; unidirectional; U-DFN1608-2; reel,tape
Case: U-DFN1608-2
Max. off-state voltage: 33V
Semiconductor structure: unidirectional
Max. forward impulse current: 19A
Breakdown voltage: 36V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 36V; 19A; unidirectional; U-DFN1608-2; reel,tape
Case: U-DFN1608-2
Max. off-state voltage: 33V
Semiconductor structure: unidirectional
Max. forward impulse current: 19A
Breakdown voltage: 36V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DRTR5V0U4LP16-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape
Case: U-DFN1616-6
Capacitance: 1.5pF
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape
Case: U-DFN1616-6
Capacitance: 1.5pF
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZTX453 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Quantity in set/package: 4000pcs.
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Quantity in set/package: 4000pcs.
auf Bestellung 2581 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
113+ | 0.64 EUR |
195+ | 0.37 EUR |
206+ | 0.35 EUR |
1000+ | 0.34 EUR |
ZTX453STZ |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP2281-1FMG-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Case: U-DFN2018-6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Active logical level: high
Kind of output: P-Channel
On-state resistance: 80mΩ
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Case: U-DFN2018-6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Active logical level: high
Kind of output: P-Channel
On-state resistance: 80mΩ
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SDT20A120CT |
![]() |
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.79V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.79V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.52 EUR |
DT2042-04SO-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Max. forward impulse current: 10A
Breakdown voltage: 6V
Leakage current: 1µA
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Max. forward impulse current: 10A
Breakdown voltage: 6V
Leakage current: 1µA
Number of channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DT2042-04TS-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Case: TSOT26
Kind of package: reel; tape
Capacitance: 1.5pF
Max. forward impulse current: 10A
Breakdown voltage: 6V
Leakage current: 1µA
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Case: TSOT26
Kind of package: reel; tape
Capacitance: 1.5pF
Max. forward impulse current: 10A
Breakdown voltage: 6V
Leakage current: 1µA
Number of channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SDT20A100CT |
![]() |
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Leakage current: 20mA
Max. forward voltage: 0.67V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Leakage current: 20mA
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SDT20B100D1-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 100A
Leakage current: 16mA
Max. forward voltage: 0.82V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 100A
Leakage current: 16mA
Max. forward voltage: 0.82V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN4008LFG-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 74nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 74nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN4008LFG-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 74nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 74nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMTH4008LFDFW-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Drain-source voltage: 40V
Drain current: 8.2A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.35W
Polarisation: unipolar
Gate charge: 14.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Drain-source voltage: 40V
Drain current: 8.2A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.35W
Polarisation: unipolar
Gate charge: 14.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMTH4008LPS-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 10.2A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.99W
Polarisation: unipolar
Gate charge: 15.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 10.2A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.99W
Polarisation: unipolar
Gate charge: 15.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMTH4008LFDFWQ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 8.2A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.35W
Polarisation: unipolar
Gate charge: 14.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 8.2A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.35W
Polarisation: unipolar
Gate charge: 14.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMTH4008LFDFWQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Drain-source voltage: 40V
Drain current: 8.2A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.35W
Polarisation: unipolar
Gate charge: 14.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Drain-source voltage: 40V
Drain current: 8.2A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.35W
Polarisation: unipolar
Gate charge: 14.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMTH4008LPSQ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 10.2A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.99W
Polarisation: unipolar
Gate charge: 15.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 10.2A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.99W
Polarisation: unipolar
Gate charge: 15.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ17CA-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 18.9÷21.7V; 21.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 21.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 18.9÷21.7V; 21.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 21.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
254+ | 0.28 EUR |
300+ | 0.24 EUR |
DMP1045U-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
200+ | 0.36 EUR |
1N5407G-T |
![]() |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCX38C |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Current gain: 5000...10000
Pulsed collector current: 2A
Quantity in set/package: 4000pcs.
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Current gain: 5000...10000
Pulsed collector current: 2A
Quantity in set/package: 4000pcs.
auf Bestellung 3974 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
100+ | 0.72 EUR |
195+ | 0.37 EUR |
206+ | 0.35 EUR |
2000+ | 0.33 EUR |
FZT1048ATA |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 17.5V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Case: SOT223
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 17.5V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Case: SOT223
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
87+ | 0.83 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
500+ | 0.43 EUR |
SMBJ100A-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
240+ | 0.3 EUR |
296+ | 0.24 EUR |
428+ | 0.17 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
RS1G-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RS1GB-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2075UFDB-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Drain current: -3A
On-state resistance: 137mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Drain current: -3A
On-state resistance: 137mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: -20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP61302QZ6-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5401G-T |
![]() |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 125A; DO201AD; 2us
Mounting: THT
Case: DO201AD
Capacitance: 40pF
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 2µs
Max. forward impulse current: 125A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 125A; DO201AD; 2us
Mounting: THT
Case: DO201AD
Capacitance: 40pF
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 2µs
Max. forward impulse current: 125A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B350AF-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 80A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 24mA
Kind of package: reel; tape
Load current: 3A
Capacitance: 110pF
Max. forward voltage: 0.65V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 80A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 24mA
Kind of package: reel; tape
Load current: 3A
Capacitance: 110pF
Max. forward voltage: 0.65V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B350AQ-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 80A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Load current: 3A
Capacitance: 200pF
Application: automotive industry
Power dissipation: 0.85W
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 80A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Load current: 3A
Capacitance: 200pF
Application: automotive industry
Power dissipation: 0.85W
Max. forward voltage: 0.7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DFLZ24-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2315 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
264+ | 0.27 EUR |
414+ | 0.17 EUR |
569+ | 0.13 EUR |
603+ | 0.12 EUR |
DGD0590AFU-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DGD0507AFN-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDZ20ASF-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; single diode; 70nA
Leakage current: 70nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Zener voltage: 20V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; single diode; 70nA
Leakage current: 70nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Zener voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMHT6016LFJ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: V-DFN5045-12
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: V-DFN5045-12
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC123YE-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH