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AP2151MPG-13 AP2151MPG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED88397878127F88A18&compId=AP2141-51.pdf?ci_sign=1b5ee9fe832d10aadb25611ee71f4897c5d0609e Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 1
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DMMT3906W-7-f DMMT3906W-7-f DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E321B77DEC00D3&compId=DMMT3906W.pdf?ci_sign=6703cfe3333f3ae1a562653df34346e0c74a201b Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
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DMMT3906-7-F DMMT3906-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E313826D0400D3&compId=DMMT3906.pdf?ci_sign=f770bd8d40be133fdb07f044ffe18a3a04c290e9 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
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DMMT3906WQ-7-F DMMT3906WQ-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E321B77DEC00D3&compId=DMMT3906W.pdf?ci_sign=6703cfe3333f3ae1a562653df34346e0c74a201b Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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D5V0P4UR6SO-7 D5V0P4UR6SO-7 DIODES INCORPORATED D5V0P4UR6SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.5V; 45A; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 4.5V
Max. forward impulse current: 45A
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 3.3V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 3pF
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315+0.23 EUR
358+0.2 EUR
463+0.15 EUR
Mindestbestellmenge: 109
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AM4961GSTR-G1 DIODES INCORPORATED AM4961.pdf Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 3.5÷16VDC
Mounting: SMD
Operating temperature: -30...90°C
Case: SSOP16
Operating voltage: 3.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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AM4962GSTR-G1 DIODES INCORPORATED AM4962.pdf Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 3.5÷16VDC
Mounting: SMD
Operating temperature: -30...90°C
Case: SSOP16
Operating voltage: 3.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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AM4967GSTR-G1 DIODES INCORPORATED AM4967.pdf Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Mounting: SMD
Operating temperature: -30...105°C
Case: SSOP16
Operating voltage: 5.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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AM4967RGSTR-G1 DIODES INCORPORATED AM4967.pdf Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Mounting: SMD
Operating temperature: -30...105°C
Case: SSOP16
Operating voltage: 5.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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AS321KTR-E1 DIODES INCORPORATED AS321.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; SOT25; 3÷36VDC; reel,tape
Mounting: SMT
Case: SOT25
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input offset current: 100nA
Input bias current: 0.2µA
Number of channels: 1
Voltage supply range: 3...36V DC
Input offset voltage: 7mV
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AP39811BS7-13 DIODES INCORPORATED AP39811.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 10...28V
Duty cycle factor: 50...65%
Kind of package: reel; tape
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AP3981B2S7-13 DIODES INCORPORATED Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 10...28V
Duty cycle factor: 45...85%
Kind of package: reel; tape
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AP3783BK6TR-G1 AP3783BK6TR-G1 DIODES INCORPORATED Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 60kHz; Ch: 1; SOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 60kHz
Case: SOT26
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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AP3783RCK6TR-G1 AP3783RCK6TR-G1 DIODES INCORPORATED Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 80kHz
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SOT26
Supply voltage: 25V
Type of integrated circuit: PMIC
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AP3781S-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB0BB2ECAF7BF80D6&compId=AP3781.pdf?ci_sign=08e3d37b86ef968c9bb4df5eb87c2a56bbe3cf6a Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; Ch: 1; SO8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 10...30V DC
Number of channels: 1
Kind of package: reel; tape
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AP3783RBK6TR-G1 AP3783RBK6TR-G1 DIODES INCORPORATED AP3783R.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 25V
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AP3785TMTR-G1 AP3785TMTR-G1 DIODES INCORPORATED AP3785T.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
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PD3Z284C5V6-7 DIODES INCORPORATED PD3Z284C2V4-PD3Z284C39.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; PowerDI®323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®323
Semiconductor structure: single diode
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ZTX694B DIODES INCORPORATED ZTX694B.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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ZTX694BSTZ DIODES INCORPORATED ZTX694B.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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P4SMAJ6.0ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AL8812FDF-13 DIODES INCORPORATED AL8812.pdf Category: LED drivers
Description: Driver; DC/DC converter; U-DFN6040-12; SMD; Topology: boost,buck
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Case: U-DFN6040-12
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 3...20V DC
Kind of package: reel; tape
Topology: boost; buck
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AL8862QFGEAW-7 DIODES INCORPORATED AL8862Q.pdf Category: LED drivers
Description: IC: driver; buck; LED driver; V-DFN3030-8; 1A; Ch: 1; 5÷55VDC; 97%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: V-DFN3030-8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 5...55V DC
Kind of package: reel; tape
Topology: buck
Output current: 1A
Efficiency: 97%
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DMN3023L-13 DMN3023L-13 DIODES INCORPORATED DMN3023L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 18.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Case: SOT23
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BCX5216QTA BCX5216QTA DIODES INCORPORATED BCX5216Q_BCX5316Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
Application: automotive industry
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BCX5216TA BCX5216TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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BCX5216TC DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 4000pcs.
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ZTX853 ZTX853 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=E1FC16C02C771AF1A303005056AB0C4F&compId=ZTX853.pdf?ci_sign=b3baeda746b7790fe74b357217278ebb2f53124d Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Quantity in set/package: 4000pcs.
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ZTX853STZ DIODES INCORPORATED ZTX853.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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APX358SG-13 DIODES INCORPORATED APX321_358.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.5÷5.5V; Ch: 2; SOP8; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Input bias current: 0.25µA
Input offset voltage: 7mV
Mounting: SMT
Slew rate: 1V/μs
Number of channels: 2
Operating voltage: 2.5...5.5V
Type of integrated circuit: operational amplifier
Case: SOP8
Integrated circuit features: low voltage; rail-to-rail
Bandwidth: 1MHz
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HDS20M-13 DIODES INCORPORATED HDS20M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 55A; HDS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 55A
Case: HDS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
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DMPH6050SSD-13 DMPH6050SSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1F857752698BF&compId=DMPH6050SSD.pdf?ci_sign=5162d59bb05289f32adacef9f0c09f5fca24f3e7 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH6050SFGQ-13 DIODES INCORPORATED DMPH6050SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6050SFGQ-7 DIODES INCORPORATED DMPH6050SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6050SK3Q-13 DIODES INCORPORATED DMPH6050SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 3.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6050SPD-13 DIODES INCORPORATED DMPH6050SPD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH6050SPDQ-13 DIODES INCORPORATED DMPH6050SPDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH6050SSDQ-13 DMPH6050SSDQ-13 DIODES INCORPORATED DMPH6050SSDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.7A
Pulsed drain current: -35A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH3010LPS-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1ED3350FF78BF&compId=DMPH3010LPS.pdf?ci_sign=9eceea82d040d2f56bf5d9b41a53930cbbeb35e4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 1.5W; PowerDI®5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 1.5W
Case: PowerDI®5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH1006UPS-13 DIODES INCORPORATED DMPH1006UPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -60A
Pulsed drain current: -140A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 124nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH1006UPSQ-13 DIODES INCORPORATED DMPH1006UPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -60A
Pulsed drain current: -140A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 124nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH3010LK3-13 DIODES INCORPORATED DMPH3010LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH3010LPSQ-13 DIODES INCORPORATED DMPH3010LPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4011SK3-13 DIODES INCORPORATED DMPH4011SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -56A
Pulsed drain current: -316A
Power dissipation: 3.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4011SK3Q-13 DIODES INCORPORATED DMPH4011SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -56A
Pulsed drain current: -316A
Power dissipation: 3.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4015SK3-13 DIODES INCORPORATED DMPH4015SK3.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4015SK3Q-13 DIODES INCORPORATED DMPH4015SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4015SPSQ-13 DIODES INCORPORATED DMPH4015SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -9A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4015SSS-13 DMPH4015SSS-13 DIODES INCORPORATED DMPH4015SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4015SSSQ-13 DMPH4015SSSQ-13 DIODES INCORPORATED DMPH4015SSSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4023SK3-13 DIODES INCORPORATED DMPH4023SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4023SK3Q-13 DIODES INCORPORATED DMPH4023SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4025SFVWQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4025SFVWQ-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4029LFG-13 DIODES INCORPORATED DMPH4029LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4029LFG-7 DIODES INCORPORATED DMPH4029LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMPH4029LFGQ-13 DIODES INCORPORATED DMPH4029LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4029LFGQ-7 DIODES INCORPORATED DMPH4029LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6023SK3-13 DIODES INCORPORATED DMPH6023SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.1A
Pulsed drain current: -60A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH6023SK3Q-13 DIODES INCORPORATED DMPH6023SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.1A
Pulsed drain current: -60A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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AP2151MPG-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED88397878127F88A18&compId=AP2141-51.pdf?ci_sign=1b5ee9fe832d10aadb25611ee71f4897c5d0609e
AP2151MPG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 1
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DMMT3906W-7-f pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E321B77DEC00D3&compId=DMMT3906W.pdf?ci_sign=6703cfe3333f3ae1a562653df34346e0c74a201b
DMMT3906W-7-f
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
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DMMT3906-7-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E313826D0400D3&compId=DMMT3906.pdf?ci_sign=f770bd8d40be133fdb07f044ffe18a3a04c290e9
DMMT3906-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
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DMMT3906WQ-7-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E321B77DEC00D3&compId=DMMT3906W.pdf?ci_sign=6703cfe3333f3ae1a562653df34346e0c74a201b
DMMT3906WQ-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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D5V0P4UR6SO-7 D5V0P4UR6SO.pdf
D5V0P4UR6SO-7
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.5V; 45A; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 4.5V
Max. forward impulse current: 45A
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 3.3V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 3pF
auf Bestellung 1673 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
214+0.33 EUR
315+0.23 EUR
358+0.2 EUR
463+0.15 EUR
Mindestbestellmenge: 109
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AM4961GSTR-G1 AM4961.pdf
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 3.5÷16VDC
Mounting: SMD
Operating temperature: -30...90°C
Case: SSOP16
Operating voltage: 3.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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AM4962GSTR-G1 AM4962.pdf
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 3.5÷16VDC
Mounting: SMD
Operating temperature: -30...90°C
Case: SSOP16
Operating voltage: 3.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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AM4967GSTR-G1 AM4967.pdf
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Mounting: SMD
Operating temperature: -30...105°C
Case: SSOP16
Operating voltage: 5.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
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AM4967RGSTR-G1 AM4967.pdf
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Mounting: SMD
Operating temperature: -30...105°C
Case: SSOP16
Operating voltage: 5.5...16V DC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Produkt ist nicht verfügbar
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AS321KTR-E1 AS321.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; SOT25; 3÷36VDC; reel,tape
Mounting: SMT
Case: SOT25
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input offset current: 100nA
Input bias current: 0.2µA
Number of channels: 1
Voltage supply range: 3...36V DC
Input offset voltage: 7mV
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AP39811BS7-13 AP39811.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 10...28V
Duty cycle factor: 50...65%
Kind of package: reel; tape
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AP3981B2S7-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 10...28V
Duty cycle factor: 45...85%
Kind of package: reel; tape
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AP3783BK6TR-G1
AP3783BK6TR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 60kHz; Ch: 1; SOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 60kHz
Case: SOT26
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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AP3783RCK6TR-G1
AP3783RCK6TR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 80kHz
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SOT26
Supply voltage: 25V
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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AP3781S-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB0BB2ECAF7BF80D6&compId=AP3781.pdf?ci_sign=08e3d37b86ef968c9bb4df5eb87c2a56bbe3cf6a
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; Ch: 1; SO8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 10...30V DC
Number of channels: 1
Kind of package: reel; tape
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AP3783RBK6TR-G1 AP3783R.pdf
AP3783RBK6TR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 25V
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AP3785TMTR-G1 AP3785T.pdf
AP3785TMTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
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PD3Z284C5V6-7 PD3Z284C2V4-PD3Z284C39.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; PowerDI®323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®323
Semiconductor structure: single diode
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ZTX694B ZTX694B.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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ZTX694BSTZ ZTX694B.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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P4SMAJ6.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AL8812FDF-13 AL8812.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter; U-DFN6040-12; SMD; Topology: boost,buck
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Case: U-DFN6040-12
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 3...20V DC
Kind of package: reel; tape
Topology: boost; buck
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AL8862QFGEAW-7 AL8862Q.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck; LED driver; V-DFN3030-8; 1A; Ch: 1; 5÷55VDC; 97%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: V-DFN3030-8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 5...55V DC
Kind of package: reel; tape
Topology: buck
Output current: 1A
Efficiency: 97%
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DMN3023L-13 DMN3023L.pdf
DMN3023L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 18.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
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BCX5216QTA BCX5216Q_BCX5316Q.pdf
BCX5216QTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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BCX5216TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEC3C889FBB3D1&compId=BCX51_52_53.pdf?ci_sign=8792a8d94e47e33071c157a1b519cb1a9a90c54e
BCX5216TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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BCX5216TC
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 4000pcs.
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ZTX853 pVersion=0046&contRep=ZT&docId=E1FC16C02C771AF1A303005056AB0C4F&compId=ZTX853.pdf?ci_sign=b3baeda746b7790fe74b357217278ebb2f53124d
ZTX853
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
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ZTX853STZ ZTX853.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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APX358SG-13 APX321_358.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.5÷5.5V; Ch: 2; SOP8; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Input bias current: 0.25µA
Input offset voltage: 7mV
Mounting: SMT
Slew rate: 1V/μs
Number of channels: 2
Operating voltage: 2.5...5.5V
Type of integrated circuit: operational amplifier
Case: SOP8
Integrated circuit features: low voltage; rail-to-rail
Bandwidth: 1MHz
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HDS20M-13 HDS20M.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 55A; HDS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 55A
Case: HDS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
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DMPH6050SSD-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1F857752698BF&compId=DMPH6050SSD.pdf?ci_sign=5162d59bb05289f32adacef9f0c09f5fca24f3e7
DMPH6050SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH6050SFGQ-13 DMPH6050SFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6050SFGQ-7 DMPH6050SFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH6050SK3Q-13 DMPH6050SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 3.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH6050SPD-13 DMPH6050SPD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH6050SPDQ-13 DMPH6050SPDQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6050SSDQ-13 DMPH6050SSDQ.pdf
DMPH6050SSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.7A
Pulsed drain current: -35A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH3010LPS-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1ED3350FF78BF&compId=DMPH3010LPS.pdf?ci_sign=9eceea82d040d2f56bf5d9b41a53930cbbeb35e4
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 1.5W; PowerDI®5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 1.5W
Case: PowerDI®5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH1006UPS-13 DMPH1006UPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -60A
Pulsed drain current: -140A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 124nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH1006UPSQ-13 DMPH1006UPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -60A
Pulsed drain current: -140A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 124nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH3010LK3-13 DMPH3010LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH3010LPSQ-13 DMPH3010LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4011SK3-13 DMPH4011SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -56A
Pulsed drain current: -316A
Power dissipation: 3.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4011SK3Q-13 DMPH4011SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -56A
Pulsed drain current: -316A
Power dissipation: 3.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH4015SK3-13 DMPH4015SK3.PDF
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH4015SPSQ-13 DMPH4015SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -9A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH4015SSS-13 DMPH4015SSS.pdf
DMPH4015SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4015SSSQ-13 DMPH4015SSSQ.pdf
DMPH4015SSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4023SK3-13 DMPH4023SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMPH4023SK3Q-13 DMPH4023SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4025SFVWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4025SFVWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH4029LFG-13 DMPH4029LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMPH4029LFG-7 DMPH4029LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMPH4029LFGQ-13 DMPH4029LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4029LFGQ-7 DMPH4029LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.7A
Pulsed drain current: -88A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH6023SK3-13 DMPH6023SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.1A
Pulsed drain current: -60A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMPH6023SK3Q-13 DMPH6023SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.1A; Idm: -60A; 3.2W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.1A
Pulsed drain current: -60A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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