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MMDT2907V-7 DIODES INCORPORATED ds30564.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Current gain: 50...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
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1N5406G-T DIODES INCORPORATED ds29003.pdf Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 1200 Stücke:
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BSS138K-13 DIODES INCORPORATED BSS138K.pdf Category: Transistors - Unclassified
Description: BSS138K-13
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BSS138K-7 DIODES INCORPORATED BSS138K.pdf Category: Transistors - Unclassified
Description: BSS138K-7
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BSS138DWQ-13 DIODES INCORPORATED BSS138DWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
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BSS138DWK-13 DIODES INCORPORATED BSS138DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
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BSS138DWQ-7 DIODES INCORPORATED BSS138DWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 12000 Stücke:
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DMP6110SFDF-7 DIODES INCORPORATED DMP6110SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDF-13 DIODES INCORPORATED DMP6110SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDFQ-13 DIODES INCORPORATED DMP6110SFDFQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDFQ-7 DIODES INCORPORATED DMP6110SFDFQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP10H400SK3-13 DMP10H400SK3-13 DIODES INCORPORATED DMP10H400SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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155+0.46 EUR
195+0.37 EUR
206+0.35 EUR
500+0.34 EUR
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P4SMAJ70ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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ZXTP4003GTA DIODES INCORPORATED ZXTP4003G.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 3A
Current gain: 60...133
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
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BC807-16W-7 DIODES INCORPORATED BC807-16W_-25W_-40W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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ULN2003V12T16-13 DIODES INCORPORATED ULN2003V12_ULN2003F12.pdf Category: Unclassified
Description: ULN2003V12T16-13
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GBJ2008-F DIODES INCORPORATED GBJ20005%7EGBJ2010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.24kA
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Case: GBJ
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MJD32CQ-13 MJD32CQ-13 DIODES INCORPORATED MJD32C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Current gain: 10...50
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MJD32C-13 DIODES INCORPORATED ds31624.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
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MJD32CUQ-13 DIODES INCORPORATED MJD32CUQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
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DMP45H4D9HK3-13 DIODES INCORPORATED DMP45H4D9HK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -12A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
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DMP45H4D9HJ3 DMP45H4D9HJ3 DIODES INCORPORATED DMP45H4D9HJ3.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
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DMP45H21DHE-13 DIODES INCORPORATED DMP45H21DHE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -1.2A
Power dissipation: 8W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 21Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
Drain current: -0.4A
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DMP610DL-7 DMP610DL-7 DIODES INCORPORATED DMP610DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 560pC
Drain current: -130mA
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DMP45H150DHE-13 DIODES INCORPORATED DMP45H150DHE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -0.45A
Power dissipation: 13.9W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 150Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
Drain current: -200mA
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DMP510DL-13 DMP510DL-13 DIODES INCORPORATED DMP510DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain current: -130mA
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DMP610DL-13 DMP610DL-13 DIODES INCORPORATED DMP610DL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 560pC
Drain current: -130mA
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DMP3056LSD-13 DMP3056LSD-13 DIODES INCORPORATED DMP3056LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1964 Stücke:
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57+1.27 EUR
91+0.79 EUR
286+0.25 EUR
304+0.24 EUR
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BZX84C16W-7-F BZX84C16W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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1160+0.06 EUR
1340+0.05 EUR
1400+0.05 EUR
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BZX84C16-7-F BZX84C16-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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500+0.14 EUR
758+0.09 EUR
819+0.09 EUR
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BZX84C16S-7-F BZX84C16S-7-F DIODES INCORPORATED BZX84CxxS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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10+7.15 EUR
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BZX84C16Q-7-F BZX84C16Q-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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AZ1117H-1.5TRE1 AZ1117H-1.5TRE1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT223
Tolerance: ±1%
Output voltage: 1.5V
Output current: 1A
Voltage drop: 1.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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BCW68HTA BCW68HTA DIODES INCORPORATED BCW68H.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5048 Stücke:
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148+0.49 EUR
204+0.35 EUR
252+0.28 EUR
522+0.14 EUR
811+0.09 EUR
858+0.08 EUR
3000+0.08 EUR
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ZXMP6A16KTC ZXMP6A16KTC DIODES INCORPORATED ZXMP6A16K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1929 Stücke:
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67+1.07 EUR
77+0.93 EUR
155+0.46 EUR
164+0.44 EUR
1000+0.42 EUR
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BSS84WQ-7-F DIODES INCORPORATED BSS84W.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
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3000+0.05 EUR
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BSS8402DWQ-7 DIODES INCORPORATED ds30380.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 6000 Stücke:
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3000+0.19 EUR
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BSS84-13-F DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 10000 Stücke:
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10000+0.03 EUR
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MMBTA05-7-F DIODES INCORPORATED MMBTA05_MMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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MMBTA05Q-13-F DIODES INCORPORATED MMBTA05_MMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Application: automotive industry
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DMN1004UFV-7 DMN1004UFV-7 DIODES INCORPORATED DMN1004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Drain-source voltage: 12V
Drain current: 55A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: PowerDI®3333-8
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FES1JE DIODES INCORPORATED FES1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
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MBRD20150CT-13 DIODES INCORPORATED MBRD20150CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 150V; 10Ax2
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
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MBRD10200CT-13 DIODES INCORPORATED MBRD10200CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 200V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ20CA-13-F SMCJ20CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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ZXTR2005ZQ-13 ZXTR2005ZQ-13 DIODES INCORPORATED ZXTR2005ZQ.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Application: automotive industry
Input voltage: 10...100V
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AP7381-50Y-13 AP7381-50Y-13 DIODES INCORPORATED AP7381.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Voltage drop: 1V
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ZXTP25020DFLTA ZXTP25020DFLTA DIODES INCORPORATED ZXTP25020DFL.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 290MHz
auf Bestellung 1970 Stücke:
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200+0.36 EUR
253+0.28 EUR
317+0.23 EUR
336+0.21 EUR
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ZXMN10B08E6TA ZXMN10B08E6TA DIODES INCORPORATED ZXMN10B08E6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.1W
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 1.5A
On-state resistance: 0.5Ω
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 392 Stücke:
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96+0.75 EUR
166+0.43 EUR
175+0.41 EUR
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DMN2004WKQ-7 DMN2004WKQ-7 DIODES INCORPORATED DMN2004WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.39A
On-state resistance: 0.9Ω
Application: automotive industry
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Produkt ist nicht verfügbar
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DMN2004WK-7 DMN2004WK-7 DIODES INCORPORATED DMN2004WK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.39A
On-state resistance: 0.9Ω
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Produkt ist nicht verfügbar
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1SMB5926B-13 1SMB5926B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
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DMN2710UTQ-7 DIODES INCORPORATED DMN2710UTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.09 EUR
Mindestbestellmenge: 3000
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TLV431AE5TA DIODES INCORPORATED TLV431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.22 EUR
Mindestbestellmenge: 3000
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SMBJ180A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 180V
Semiconductor structure: unidirectional
Max. forward impulse current: 2.06A
Breakdown voltage: 200...220V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Case: SMB
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ZHCS506TA ZHCS506TA DIODES INCORPORATED ZHCS506.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Power dissipation: 0.33W
auf Bestellung 626 Stücke:
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97+0.74 EUR
151+0.47 EUR
291+0.25 EUR
307+0.23 EUR
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ZHCS500TA ZHCS500TA DIODES INCORPORATED ZHCS500.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Max. forward voltage: 0.55V
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ZHCS500QTA ZHCS500QTA DIODES INCORPORATED ZHCS500.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Power dissipation: 0.33W
Max. forward voltage: 1.05V
Reverse recovery time: 10ns
Leakage current: 40µA
Application: automotive industry
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ZHCS506QTA ZHCS506QTA DIODES INCORPORATED ZHCS506Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Max. forward voltage: 1.35V
Reverse recovery time: 10ns
Leakage current: 40µA
Application: automotive industry
Produkt ist nicht verfügbar
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DMG1012T-13 DMG1012T-13 DIODES INCORPORATED DMG1012TQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
Produkt ist nicht verfügbar
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MMDT2907V-7 ds30564.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Current gain: 50...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
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1N5406G-T ds29003.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 1200 Stücke:
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Anzahl Preis
1200+0.13 EUR
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BSS138K-13 BSS138K.pdf
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: BSS138K-13
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.04 EUR
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BSS138K-7 BSS138K.pdf
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: BSS138K-7
auf Bestellung 15000 Stücke:
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Anzahl Preis
3000+0.04 EUR
Mindestbestellmenge: 3000
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BSS138DWQ-13 BSS138DWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.15 EUR
Mindestbestellmenge: 10000
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BSS138DWK-13 BSS138DWK.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.04 EUR
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BSS138DWQ-7 BSS138DWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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DMP6110SFDF-7 DMP6110SFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDF-13 DMP6110SFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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DMP6110SFDFQ-13 DMP6110SFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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DMP6110SFDFQ-7 DMP6110SFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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DMP10H400SK3-13 DMP10H400SK3.pdf
DMP10H400SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
155+0.46 EUR
195+0.37 EUR
206+0.35 EUR
500+0.34 EUR
Mindestbestellmenge: 122
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P4SMAJ70ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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ZXTP4003GTA ZXTP4003G.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 3A
Current gain: 60...133
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC807-16W-7 BC807-16W_-25W_-40W.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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ULN2003V12T16-13 ULN2003V12_ULN2003F12.pdf
Hersteller: DIODES INCORPORATED
Category: Unclassified
Description: ULN2003V12T16-13
auf Bestellung 67500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.19 EUR
Mindestbestellmenge: 2500
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GBJ2008-F GBJ20005%7EGBJ2010.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.24kA
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Case: GBJ
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MJD32CQ-13 MJD32C.pdf
MJD32CQ-13
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Current gain: 10...50
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MJD32C-13 ds31624.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
Produkt ist nicht verfügbar
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MJD32CUQ-13 MJD32CUQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMP45H4D9HK3-13 DMP45H4D9HK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -12A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
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DMP45H4D9HJ3 DMP45H4D9HJ3.pdf
DMP45H4D9HJ3
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
Produkt ist nicht verfügbar
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DMP45H21DHE-13 DMP45H21DHE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -1.2A
Power dissipation: 8W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 21Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
Drain current: -0.4A
Produkt ist nicht verfügbar
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DMP610DL-7 DMP610DL.pdf
DMP610DL-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 560pC
Drain current: -130mA
Produkt ist nicht verfügbar
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DMP45H150DHE-13 DMP45H150DHE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -0.45A
Power dissipation: 13.9W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 150Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
Drain current: -200mA
Produkt ist nicht verfügbar
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DMP510DL-13 DMP510DL.pdf
DMP510DL-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain current: -130mA
Produkt ist nicht verfügbar
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DMP610DL-13 DMP610DL.pdf
DMP610DL-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 560pC
Drain current: -130mA
Produkt ist nicht verfügbar
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DMP3056LSD-13 DMP3056LSD.pdf
DMP3056LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
91+0.79 EUR
286+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C16W-7-F BZX84CxxW_SER.pdf
BZX84C16W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1160+0.06 EUR
1340+0.05 EUR
1400+0.05 EUR
Mindestbestellmenge: 1160
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BZX84C16-7-F BZX84Cxx_SER.pdf
BZX84C16-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
758+0.09 EUR
819+0.09 EUR
Mindestbestellmenge: 500
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BZX84C16S-7-F BZX84CxxS_SER.pdf
BZX84C16S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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BZX84C16Q-7-F BZX84Cxx_SER.pdf
BZX84C16Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AZ1117H-1.5TRE1 AZ1117_Rev5.3_Jan2019_DS.pdf
AZ1117H-1.5TRE1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Manufacturer series: AZ1117
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT223
Tolerance: ±1%
Output voltage: 1.5V
Output current: 1A
Voltage drop: 1.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCW68HTA BCW68H.pdf
BCW68HTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5048 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
204+0.35 EUR
252+0.28 EUR
522+0.14 EUR
811+0.09 EUR
858+0.08 EUR
3000+0.08 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A16KTC ZXMP6A16K.pdf
ZXMP6A16KTC
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
77+0.93 EUR
155+0.46 EUR
164+0.44 EUR
1000+0.42 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
BSS84WQ-7-F BSS84W.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 57000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSS8402DWQ-7 ds30380.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSS84-13-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.03 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA05-7-F MMBTA05_MMBTA06.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA05Q-13-F MMBTA05_MMBTA06.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN1004UFV-7 DMN1004UFV.pdf
DMN1004UFV-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Drain-source voltage: 12V
Drain current: 55A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: PowerDI®3333-8
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
212+0.34 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
FES1JE FES1JE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 160000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.05 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
MBRD20150CT-13 MBRD20150CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 150V; 10Ax2
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRD10200CT-13 MBRD10200CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 200V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ20CA-13-F SMCJ_ser.pdf
SMCJ20CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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ZXTR2005ZQ-13 ZXTR2005ZQ.pdf
ZXTR2005ZQ-13
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Application: automotive industry
Input voltage: 10...100V
Produkt ist nicht verfügbar
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AP7381-50Y-13 AP7381.pdf
AP7381-50Y-13
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Voltage drop: 1V
Produkt ist nicht verfügbar
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ZXTP25020DFLTA ZXTP25020DFL.pdf
ZXTP25020DFLTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 290MHz
auf Bestellung 1970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
253+0.28 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN10B08E6TA ZXMN10B08E6.pdf
ZXMN10B08E6TA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.1W
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 1.5A
On-state resistance: 0.5Ω
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
96+0.75 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
DMN2004WKQ-7 DMN2004WKQ.pdf
DMN2004WKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.39A
On-state resistance: 0.9Ω
Application: automotive industry
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2004WK-7 DMN2004WK.pdf
DMN2004WK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Drain current: 0.39A
On-state resistance: 0.9Ω
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Produkt ist nicht verfügbar
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1SMB5926B-13 1SMB59xxB_ser.pdf
1SMB5926B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UTQ-7 DMN2710UTQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TLV431AE5TA TLV431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ180A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 180V
Semiconductor structure: unidirectional
Max. forward impulse current: 2.06A
Breakdown voltage: 200...220V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Case: SMB
Produkt ist nicht verfügbar
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ZHCS506TA ZHCS506.pdf
ZHCS506TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Power dissipation: 0.33W
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
151+0.47 EUR
291+0.25 EUR
307+0.23 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
ZHCS500TA ZHCS500.pdf
ZHCS500TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Max. forward voltage: 0.55V
Produkt ist nicht verfügbar
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ZHCS500QTA ZHCS500.pdf
ZHCS500QTA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Power dissipation: 0.33W
Max. forward voltage: 1.05V
Reverse recovery time: 10ns
Leakage current: 40µA
Application: automotive industry
Produkt ist nicht verfügbar
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ZHCS506QTA ZHCS506Q.pdf
ZHCS506QTA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Max. forward voltage: 1.35V
Reverse recovery time: 10ns
Leakage current: 40µA
Application: automotive industry
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DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
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