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DMT4004LPS-13 DIODES INCORPORATED DMT4004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AP3428KTTR-G1 AP3428KTTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B797BE7FC0497E28&compId=AP3428x-DTE.pdf?ci_sign=70638f42e3a2b113f60a578778387d11a13bdab9 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2772 Stücke:
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209+0.34 EUR
246+0.29 EUR
272+0.26 EUR
281+0.25 EUR
360+0.2 EUR
382+0.19 EUR
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AP3428AKTTR-G1 AP3428AKTTR-G1 DIODES INCORPORATED AP3428_A.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2689 Stücke:
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120+0.6 EUR
194+0.37 EUR
230+0.31 EUR
360+0.2 EUR
382+0.19 EUR
500+0.18 EUR
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AP3428DNTR-G1 AP3428DNTR-G1 DIODES INCORPORATED AP3428_A.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Topology: buck
Kind of integrated circuit: DC/DC converter
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Case: U-DFN2020-6
Type of integrated circuit: PMIC
auf Bestellung 2975 Stücke:
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157+0.46 EUR
193+0.37 EUR
217+0.33 EUR
253+0.28 EUR
388+0.18 EUR
410+0.17 EUR
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AP3428AWT-7 AP3428AWT-7 DIODES INCORPORATED AP3428_A.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
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AP3428WT-7 DIODES INCORPORATED AP3428_A.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
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AP61202Z6-7 DIODES INCORPORATED AP61200_AP61201_AP61202_AP61203.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.3...5.5V DC
Output voltage: 0.6...3.6V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PFM switching mode; PG output
Efficiency: 89%
Produkt ist nicht verfügbar
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ZXTN19100CFFTA ZXTN19100CFFTA DIODES INCORPORATED ZXTN19100CFF.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 0.84W
Case: SOT23F
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 200...500
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AP64060WU-7 DIODES INCORPORATED AP64060_AP64062.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 0.8...26V DC
Output current: 0.6A
Case: TSOT26
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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SMAJ40A-13-F SMAJ40A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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239+0.3 EUR
298+0.24 EUR
353+0.2 EUR
603+0.12 EUR
893+0.08 EUR
944+0.076 EUR
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SMAJ40AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ13A-13-F SMAJ13A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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218+0.33 EUR
258+0.28 EUR
327+0.22 EUR
910+0.079 EUR
962+0.074 EUR
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SMAJ13AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P4SMAJ13ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAZ12-13-F SMAZ12-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AFB86DDAF826E0C4&compId=SMAZx-13-F.pdf?ci_sign=b12d4006ba65a472eaab9a6f640870a647181c64 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Zener voltage: 12V
Tolerance: ±5%
Zener current: 83mA
auf Bestellung 1070 Stücke:
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250+0.29 EUR
302+0.24 EUR
400+0.18 EUR
455+0.16 EUR
782+0.092 EUR
834+0.086 EUR
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DMP4025SFGQ-7 DMP4025SFGQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Drain current: -5.4A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1469 Stücke:
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63+1.14 EUR
98+0.74 EUR
221+0.32 EUR
233+0.31 EUR
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DMP4025LSDQ-13 DMP4025LSDQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -28A
Drain current: -6.1A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.14W
Application: automotive industry
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
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DMP4025LSS-13 DMP4025LSS-13 DIODES INCORPORATED DMP4025LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -30A
Drain current: -6.9A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
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DMP4025LSSQ-13 DMP4025LSSQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -30A
Drain current: -6.9A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Application: automotive industry
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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DMP4025SFGQ-13 DMP4025SFGQ-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Drain current: -5.4A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMN26D0UT-7 DMN26D0UT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED9079072966A18&compId=DMN26D0UT.pdf?ci_sign=18d90f9daedebc14577cd2d97c57545b057eefd2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
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DMN62D0UT-7 DMN62D0UT-7 DIODES INCORPORATED DMN62D0UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Drain current: 0.26A
Gate charge: 0.5nC
Power dissipation: 0.34W
On-state resistance:
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhancement
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DMN2710UT-7 DMN2710UT-7 DIODES INCORPORATED DMN2710UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.7A
Gate charge: 0.6nC
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Pulsed drain current: 5.6A
Kind of channel: enhancement
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DMP21D0UT-7 DMP21D0UT-7 DIODES INCORPORATED DMP21D0UT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -650mA
Gate charge: 1.5nC
Power dissipation: 0.33W
On-state resistance: 960mΩ
Gate-source voltage: ±8V
Pulsed drain current: -5A
Kind of channel: enhancement
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DMN31D6UT-7 DMN31D6UT-7 DIODES INCORPORATED DMN31D6UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Drain current: 0.35A
Gate charge: 0.35nC
Power dissipation: 0.32W
On-state resistance:
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Kind of channel: enhancement
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DMP22D6UT-7 DMP22D6UT-7 DIODES INCORPORATED ds31585.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -310mA
Power dissipation: 0.15W
On-state resistance: 2.6Ω
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DESD5V2S2UT-7 DIODES INCORPORATED ds31791.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Kind of package: reel; tape
Capacitance: 200pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 5.2V
Breakdown voltage: 6.4V
Max. forward impulse current: 15A
Produkt ist nicht verfügbar
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SMAJ8.5A-13-F SMAJ8.5A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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D1V8L1BS2LP3-7 DIODES INCORPORATED D1V8L1BS2LP3.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.1V; bidirectional; 0201,0603; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 1.8V
Breakdown voltage: 2.1V
Case: 0201; 0603
Produkt ist nicht verfügbar
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D2V5L1BS2LP3-7 DIODES INCORPORATED D2V5L1BS2LP3.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6V; 15A; bidirectional; 0201,0603; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6V
Max. forward impulse current: 15A
Case: 0201; 0603
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D2V5H1BS2LP-7B DIODES INCORPORATED D2V5H1BS2LP.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6V; 85A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6V
Max. forward impulse current: 85A
Case: DFN1006-2
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SMAJ8.0A-13-F SMAJ8.0A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP6023LEQ-13 DIODES INCORPORATED DMP6023LEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP6023LFG-13 DIODES INCORPORATED DMP6023LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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SMAJ40CA-13-F SMAJ40CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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AL5815W5-7 DIODES INCORPORATED AL5815-AL5816.pdf Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
Output current: 15mA
Number of channels: 1
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AP5725WUG-7 DIODES INCORPORATED AP5725.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; TSOT23-6; SMD; 1÷1.4MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT23-6
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Integrated circuit features: soft-start function; UVLO (UnderVoltage LockOut)
Topology: boost
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DMP2045U-7 DMP2045U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0728254C5B8BF&compId=DMP2045U.pdf?ci_sign=4a68cf4b053e1bdfe9c706f8e52f8f365553d101 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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D3V3H1B2LP-7B DIODES INCORPORATED D3V3H1B2LP.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 40A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
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D3V3L1B2LP3-7 DIODES INCORPORATED D3V3L1B2LP3.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 12A; bidirectional; 0201,0603; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
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BAS116-7-F BAS116-7-F DIODES INCORPORATED ds30233.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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1441+0.05 EUR
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BAS116Q-13-F BAS116Q-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9ABAD948387E28&compId=BAS116.pdf?ci_sign=b92f56b362e0e28fb11c1bb3e9ba90fcf4cfe602 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
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BAS116T-7-F DIODES INCORPORATED ds30258.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS116Q-7-F DIODES INCORPORATED ds30233.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS116V-7 DIODES INCORPORATED ds30562.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double independent
Case: SOT563
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS116LPH4-7B DIODES INCORPORATED BAS116LPH4.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; DFN2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BZX84C13-7-F BZX84C13-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84C13W-7-F BZX84C13W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BZX84C13Q-7-F BZX84C13Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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KBJ610G KBJ610G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8DC6185B653D7&compId=KBJ6005G_ser.pdf?ci_sign=94bc25e6854f58339aa548e88fa603f92be3d412 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 170A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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DMN3404L-7 DMN3404L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F990459F186748&compId=DMN3404L.pdf?ci_sign=4f363a10b568db54e6fe5a8fa65cec1aeb331181 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3125L-7 DMP3125L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E109C82DC218BF&compId=DMP3125L.pdf?ci_sign=81f18b8a2c8bf4a79506e3a264fc997a066316e7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.65W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AP2161DFMG-7 DIODES INCORPORATED AP2161D_71D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AH1806-Z-7 DIODES INCORPORATED AH1806.pdf Category: Sensors and Transducers - Unclassified
Description: AH1806-Z-7
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SDT10A45P5-7 DIODES INCORPORATED SDT10A45P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
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AZ386MTR-E1 DIODES INCORPORATED AZ386.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 4÷16VDC; SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Supply voltage: 4...16V DC
Type of integrated circuit: audio amplifier
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FZT851QTA DIODES INCORPORATED FZT851.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 25...300
Pulsed collector current: 20A
Application: automotive industry
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BZT52C2V7-7-F BZT52C2V7-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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556+0.13 EUR
794+0.09 EUR
1534+0.047 EUR
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BZT52C2V7S-7-F BZT52C2V7S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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ZVN2120GTA DIODES INCORPORATED ZVN2120G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMT4004LPS-13 DMT4004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
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AP3428KTTR-G1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B797BE7FC0497E28&compId=AP3428x-DTE.pdf?ci_sign=70638f42e3a2b113f60a578778387d11a13bdab9
AP3428KTTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
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209+0.34 EUR
246+0.29 EUR
272+0.26 EUR
281+0.25 EUR
360+0.2 EUR
382+0.19 EUR
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AP3428AKTTR-G1 AP3428_A.pdf
AP3428AKTTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2689 Stücke:
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120+0.6 EUR
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230+0.31 EUR
360+0.2 EUR
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500+0.18 EUR
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AP3428DNTR-G1 AP3428_A.pdf
AP3428DNTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Topology: buck
Kind of integrated circuit: DC/DC converter
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Case: U-DFN2020-6
Type of integrated circuit: PMIC
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
193+0.37 EUR
217+0.33 EUR
253+0.28 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 157
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AP3428AWT-7 AP3428_A.pdf
AP3428AWT-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
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AP3428WT-7 AP3428_A.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
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AP61202Z6-7 AP61200_AP61201_AP61202_AP61203.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.3...5.5V DC
Output voltage: 0.6...3.6V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PFM switching mode; PG output
Efficiency: 89%
Produkt ist nicht verfügbar
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ZXTN19100CFFTA ZXTN19100CFF.pdf
ZXTN19100CFFTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 0.84W
Case: SOT23F
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 200...500
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.12 EUR
Mindestbestellmenge: 64
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AP64060WU-7 AP64060_AP64062.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 0.8...26V DC
Output current: 0.6A
Case: TSOT26
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ40A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ40A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 2690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
298+0.24 EUR
353+0.2 EUR
603+0.12 EUR
893+0.08 EUR
944+0.076 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ40AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Produkt ist nicht verfügbar
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SMAJ13A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ13A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2638 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
258+0.28 EUR
327+0.22 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 218
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SMAJ13AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P4SMAJ13ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAZ12-13-F pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AFB86DDAF826E0C4&compId=SMAZx-13-F.pdf?ci_sign=b12d4006ba65a472eaab9a6f640870a647181c64
SMAZ12-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Zener voltage: 12V
Tolerance: ±5%
Zener current: 83mA
auf Bestellung 1070 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
302+0.24 EUR
400+0.18 EUR
455+0.16 EUR
782+0.092 EUR
834+0.086 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
DMP4025SFGQ-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1
DMP4025SFGQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Drain current: -5.4A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
98+0.74 EUR
221+0.32 EUR
233+0.31 EUR
Mindestbestellmenge: 63
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DMP4025LSDQ-13
DMP4025LSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -28A
Drain current: -6.1A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.14W
Application: automotive industry
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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DMP4025LSS-13 DMP4025LSS.pdf
DMP4025LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -30A
Drain current: -6.9A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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DMP4025LSSQ-13
DMP4025LSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -30A
Drain current: -6.9A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Application: automotive industry
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP4025SFGQ-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1
DMP4025SFGQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Drain current: -5.4A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMN26D0UT-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED9079072966A18&compId=DMN26D0UT.pdf?ci_sign=18d90f9daedebc14577cd2d97c57545b057eefd2
DMN26D0UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.47 EUR
Mindestbestellmenge: 150
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DMN62D0UT-7 DMN62D0UT.pdf
DMN62D0UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Drain current: 0.26A
Gate charge: 0.5nC
Power dissipation: 0.34W
On-state resistance:
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2710UT-7 DMN2710UT.pdf
DMN2710UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.7A
Gate charge: 0.6nC
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Pulsed drain current: 5.6A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP21D0UT-7 DMP21D0UT.pdf
DMP21D0UT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -650mA
Gate charge: 1.5nC
Power dissipation: 0.33W
On-state resistance: 960mΩ
Gate-source voltage: ±8V
Pulsed drain current: -5A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Drain current: 0.35A
Gate charge: 0.35nC
Power dissipation: 0.32W
On-state resistance:
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP22D6UT-7 ds31585.pdf
DMP22D6UT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -310mA
Power dissipation: 0.15W
On-state resistance: 2.6Ω
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DESD5V2S2UT-7 ds31791.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Kind of package: reel; tape
Capacitance: 200pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 5.2V
Breakdown voltage: 6.4V
Max. forward impulse current: 15A
Produkt ist nicht verfügbar
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SMAJ8.5A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ8.5A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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D1V8L1BS2LP3-7 D1V8L1BS2LP3.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.1V; bidirectional; 0201,0603; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 1.8V
Breakdown voltage: 2.1V
Case: 0201; 0603
Produkt ist nicht verfügbar
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D2V5L1BS2LP3-7 D2V5L1BS2LP3.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6V; 15A; bidirectional; 0201,0603; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6V
Max. forward impulse current: 15A
Case: 0201; 0603
Produkt ist nicht verfügbar
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D2V5H1BS2LP-7B D2V5H1BS2LP.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6V; 85A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6V
Max. forward impulse current: 85A
Case: DFN1006-2
Produkt ist nicht verfügbar
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SMAJ8.0A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ8.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMP6023LEQ-13 DMP6023LEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMP6023LFG-13 DMP6023LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMAJ40CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ40CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 4877 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
410+0.17 EUR
527+0.14 EUR
867+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 358
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AL5815W5-7 AL5815-AL5816.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
Output current: 15mA
Number of channels: 1
Produkt ist nicht verfügbar
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AP5725WUG-7 AP5725.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; TSOT23-6; SMD; 1÷1.4MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT23-6
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Integrated circuit features: soft-start function; UVLO (UnderVoltage LockOut)
Topology: boost
Produkt ist nicht verfügbar
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DMP2045U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0728254C5B8BF&compId=DMP2045U.pdf?ci_sign=4a68cf4b053e1bdfe9c706f8e52f8f365553d101
DMP2045U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
350+0.2 EUR
419+0.17 EUR
454+0.16 EUR
827+0.087 EUR
875+0.082 EUR
Mindestbestellmenge: 295
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D3V3H1B2LP-7B D3V3H1B2LP.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 40A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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D3V3L1B2LP3-7 D3V3L1B2LP3.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 12A; bidirectional; 0201,0603; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS116-7-F ds30233.pdf
BAS116-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 4550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
834+0.086 EUR
1161+0.062 EUR
1441+0.05 EUR
2565+0.028 EUR
2703+0.026 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BAS116Q-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9ABAD948387E28&compId=BAS116.pdf?ci_sign=b92f56b362e0e28fb11c1bb3e9ba90fcf4cfe602
BAS116Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 3550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2375+0.03 EUR
2600+0.028 EUR
2950+0.024 EUR
3350+0.021 EUR
3550+0.02 EUR
Mindestbestellmenge: 2375
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BAS116T-7-F ds30258.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116Q-7-F ds30233.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAS116V-7 ds30562.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double independent
Case: SOT563
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAS116LPH4-7B BAS116LPH4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; DFN2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BZX84C13-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C13-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 2957 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
658+0.11 EUR
794+0.09 EUR
1000+0.072 EUR
1749+0.041 EUR
2565+0.028 EUR
2957+0.024 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C13W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C13W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C13Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C13Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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KBJ610G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8DC6185B653D7&compId=KBJ6005G_ser.pdf?ci_sign=94bc25e6854f58339aa548e88fa603f92be3d412
KBJ610G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 170A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMN3404L-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F990459F186748&compId=DMN3404L.pdf?ci_sign=4f363a10b568db54e6fe5a8fa65cec1aeb331181
DMN3404L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 8999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
286+0.25 EUR
400+0.18 EUR
463+0.15 EUR
1069+0.067 EUR
1132+0.063 EUR
Mindestbestellmenge: 193
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DMP3125L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E109C82DC218BF&compId=DMP3125L.pdf?ci_sign=81f18b8a2c8bf4a79506e3a264fc997a066316e7
DMP3125L-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.65W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2392 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
468+0.15 EUR
538+0.13 EUR
581+0.12 EUR
879+0.081 EUR
930+0.077 EUR
Mindestbestellmenge: 417
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AP2161DFMG-7 AP2161D_71D.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
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AH1806-Z-7 AH1806.pdf
Hersteller: DIODES INCORPORATED
Category: Sensors and Transducers - Unclassified
Description: AH1806-Z-7
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.33 EUR
Mindestbestellmenge: 3000
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SDT10A45P5-7 SDT10A45P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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AZ386MTR-E1 AZ386.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 4÷16VDC; SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Supply voltage: 4...16V DC
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
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FZT851QTA FZT851.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 25...300
Pulsed collector current: 20A
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C2V7-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C2V7-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 2018 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
794+0.09 EUR
1534+0.047 EUR
2018+0.036 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C2V7S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C2V7S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
511+0.14 EUR
589+0.12 EUR
999+0.072 EUR
1276+0.056 EUR
2874+0.025 EUR
2945+0.024 EUR
Mindestbestellmenge: 455
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ZVN2120GTA ZVN2120G.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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