Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79585) > Seite 1300 nach 1327
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DMT4004LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2.6W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Gate charge: 82.2nC On-state resistance: 4mΩ Gate-source voltage: ±20V Drain current: 21A Drain-source voltage: 40V Pulsed drain current: 100A Kind of channel: enhancement |
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AP3428KTTR-G1 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: TSOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
auf Bestellung 2772 Stücke: Lieferzeit 14-21 Tag (e) |
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AP3428AKTTR-G1 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: TSOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
auf Bestellung 2689 Stücke: Lieferzeit 14-21 Tag (e) |
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AP3428DNTR-G1 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD Topology: buck Kind of integrated circuit: DC/DC converter Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output voltage: 0.6...5.5V DC Output current: 1A Input voltage: 2.5...5.5V DC Efficiency: 95% Frequency: 1.5MHz Case: U-DFN2020-6 Type of integrated circuit: PMIC |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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AP3428AWT-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: TSOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
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AP3428WT-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: TSOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
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AP61202Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.3...5.5V DC Output voltage: 0.6...3.6V DC Output current: 2A Case: SOT563 Mounting: SMD Frequency: 1.3MHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Integrated circuit features: PFM switching mode; PG output Efficiency: 89% |
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ZXTN19100CFFTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4.5A Power dissipation: 0.84W Case: SOT23F Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150MHz Current gain: 200...500 |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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AP64060WU-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 0.8...26V DC Output current: 0.6A Case: TSOT26 Mounting: SMD Frequency: 2.2MHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape |
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SMAJ40A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
auf Bestellung 2690 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ40AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
Produkt ist nicht verfügbar |
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SMAJ13A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2638 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ13AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
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P4SMAJ13ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAZ12-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Zener voltage: 12V Tolerance: ±5% Zener current: 83mA |
auf Bestellung 1070 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4025SFGQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: -40V On-state resistance: 45mΩ Power dissipation: 0.81W Drain current: -5.4A Gate-source voltage: ±20V Kind of channel: enhancement Application: automotive industry |
auf Bestellung 1469 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4025LSDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8 Mounting: SMD Case: SO8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: -40V Pulsed drain current: -28A Drain current: -6.1A Gate charge: 33.7nC On-state resistance: 45mΩ Power dissipation: 2.14W Application: automotive industry Gate-source voltage: ±20V Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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DMP4025LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8 Mounting: SMD Case: SO8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: -40V Pulsed drain current: -30A Drain current: -6.9A Gate charge: 33.7nC On-state resistance: 45mΩ Power dissipation: 2.4W Gate-source voltage: ±20V Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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DMP4025LSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8 Mounting: SMD Case: SO8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: -40V Pulsed drain current: -30A Drain current: -6.9A Gate charge: 33.7nC On-state resistance: 45mΩ Power dissipation: 2.4W Application: automotive industry Gate-source voltage: ±20V Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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DMP4025SFGQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: -40V On-state resistance: 45mΩ Power dissipation: 0.81W Drain current: -5.4A Gate-source voltage: ±20V Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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DMN26D0UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Kind of package: 7 inch reel; tape Drain current: 0.23A Power dissipation: 0.3W On-state resistance: 15Ω Gate-source voltage: ±10V Kind of channel: enhancement Version: ESD |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN62D0UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 60V Kind of package: 7 inch reel; tape Drain current: 0.26A Gate charge: 0.5nC Power dissipation: 0.34W On-state resistance: 3Ω Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMN2710UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Kind of package: 7 inch reel; tape Drain current: 0.7A Gate charge: 0.6nC Power dissipation: 0.52W On-state resistance: 0.75Ω Gate-source voltage: ±6V Pulsed drain current: 5.6A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMP21D0UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW Type of transistor: P-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Kind of package: 7 inch reel; tape Drain current: -650mA Gate charge: 1.5nC Power dissipation: 0.33W On-state resistance: 960mΩ Gate-source voltage: ±8V Pulsed drain current: -5A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMN31D6UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 30V Kind of package: 7 inch reel; tape Drain current: 0.35A Gate charge: 0.35nC Power dissipation: 0.32W On-state resistance: 2Ω Gate-source voltage: ±12V Pulsed drain current: 0.8A Kind of channel: enhancement |
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DMP22D6UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW Type of transistor: P-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Kind of package: 7 inch reel; tape Drain current: -310mA Power dissipation: 0.15W On-state resistance: 2.6Ω Gate-source voltage: ±8V Pulsed drain current: -0.75A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DESD5V2S2UT-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape Mounting: SMD Case: SOT23 Type of diode: TVS array Kind of package: reel; tape Capacitance: 200pF Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 5.2V Breakdown voltage: 6.4V Max. forward impulse current: 15A |
Produkt ist nicht verfügbar |
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SMAJ8.5A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.4V Max. forward impulse current: 27.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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D1V8L1BS2LP3-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 2.1V; bidirectional; 0201,0603; reel,tape Semiconductor structure: bidirectional Kind of package: reel; tape Mounting: SMD Type of diode: TVS Max. off-state voltage: 1.8V Breakdown voltage: 2.1V Case: 0201; 0603 |
Produkt ist nicht verfügbar |
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D2V5L1BS2LP3-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 2.6V; 15A; bidirectional; 0201,0603; reel,tape Semiconductor structure: bidirectional Kind of package: reel; tape Mounting: SMD Type of diode: TVS Max. off-state voltage: 2.5V Breakdown voltage: 2.6V Max. forward impulse current: 15A Case: 0201; 0603 |
Produkt ist nicht verfügbar |
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D2V5H1BS2LP-7B | DIODES INCORPORATED |
![]() Description: Diode: TVS; 2.6V; 85A; bidirectional; DFN1006-2; reel,tape Semiconductor structure: bidirectional Kind of package: reel; tape Mounting: SMD Type of diode: TVS Max. off-state voltage: 2.5V Breakdown voltage: 2.6V Max. forward impulse current: 85A Case: DFN1006-2 |
Produkt ist nicht verfügbar |
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SMAJ8.0A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 29.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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DMP6023LEQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -50A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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DMP6023LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.2A Pulsed drain current: -55A Power dissipation: 1W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SMAJ40CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
auf Bestellung 4877 Stücke: Lieferzeit 14-21 Tag (e) |
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AL5815W5-7 | DIODES INCORPORATED |
![]() Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SOT25 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 4.5...60V DC Kind of package: reel; tape Output current: 15mA Number of channels: 1 |
Produkt ist nicht verfügbar |
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AP5725WUG-7 | DIODES INCORPORATED |
![]() Description: Driver; DC/DC converter,LED driver; TSOT23-6; SMD; 1÷1.4MHz Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Case: TSOT23-6 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...5.5V DC Frequency: 1...1.4MHz Integrated circuit features: soft-start function; UVLO (UnderVoltage LockOut) Topology: boost |
Produkt ist nicht verfügbar |
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DMP2045U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2466 Stücke: Lieferzeit 14-21 Tag (e) |
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D3V3H1B2LP-7B | DIODES INCORPORATED |
![]() Description: Diode: TVS; 3.8V; 40A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 3.8V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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D3V3L1B2LP3-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 3.8V; 12A; bidirectional; 0201,0603; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 3.8V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: 0201; 0603 Mounting: SMD Leakage current: 0.2µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAS116-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
auf Bestellung 4550 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS116Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
auf Bestellung 3550 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS116T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT523 Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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BAS116Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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BAS116V-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: double independent Case: SOT563 Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BAS116LPH4-7B | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; DFN2; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: DFN2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX84C13-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 13V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 2957 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C13W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 13V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 13V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84C13Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 13V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBJ610G | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 170A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 170A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMN3404L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 82mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 8999 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3125L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.65W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.65W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2392 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2161DFMG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2018-6 On-state resistance: 95mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AH1806-Z-7 | DIODES INCORPORATED |
![]() Description: AH1806-Z-7 |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SDT10A45P5-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape Mounting: SMD Case: PowerDI®5 Type of diode: Schottky rectifying Leakage current: 80mA Max. forward voltage: 0.47V Load current: 10A Max. off-state voltage: 45V Max. forward impulse current: 180A Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AZ386MTR-E1 | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; 4÷16VDC; SO8 Operating temperature: 0...70°C Kind of package: reel; tape Case: SO8 Mounting: SMD Supply voltage: 4...16V DC Type of integrated circuit: audio amplifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FZT851QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 130MHz Current gain: 25...300 Pulsed collector current: 20A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZT52C2V7-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 2.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 2018 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C2V7S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2120GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.32A Pulsed drain current: 2A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
DMT4004LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP3428KTTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2772 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
246+ | 0.29 EUR |
272+ | 0.26 EUR |
281+ | 0.25 EUR |
360+ | 0.2 EUR |
382+ | 0.19 EUR |
AP3428AKTTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2689 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
194+ | 0.37 EUR |
230+ | 0.31 EUR |
360+ | 0.2 EUR |
382+ | 0.19 EUR |
500+ | 0.18 EUR |
AP3428DNTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Topology: buck
Kind of integrated circuit: DC/DC converter
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Case: U-DFN2020-6
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Topology: buck
Kind of integrated circuit: DC/DC converter
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Case: U-DFN2020-6
Type of integrated circuit: PMIC
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
193+ | 0.37 EUR |
217+ | 0.33 EUR |
253+ | 0.28 EUR |
388+ | 0.18 EUR |
410+ | 0.17 EUR |
AP3428AWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP3428WT-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP61202Z6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.3...5.5V DC
Output voltage: 0.6...3.6V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PFM switching mode; PG output
Efficiency: 89%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.3...5.5V DC
Output voltage: 0.6...3.6V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PFM switching mode; PG output
Efficiency: 89%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXTN19100CFFTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 0.84W
Case: SOT23F
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 200...500
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 0.84W
Case: SOT23F
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 200...500
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.12 EUR |
AP64060WU-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 0.8...26V DC
Output current: 0.6A
Case: TSOT26
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 0.8...26V DC
Output current: 0.6A
Case: TSOT26
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ40A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 2690 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
298+ | 0.24 EUR |
353+ | 0.2 EUR |
603+ | 0.12 EUR |
893+ | 0.08 EUR |
944+ | 0.076 EUR |
SMAJ40AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ13A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2638 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
258+ | 0.28 EUR |
327+ | 0.22 EUR |
910+ | 0.079 EUR |
962+ | 0.074 EUR |
SMAJ13AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P4SMAJ13ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAZ12-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Zener voltage: 12V
Tolerance: ±5%
Zener current: 83mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Zener voltage: 12V
Tolerance: ±5%
Zener current: 83mA
auf Bestellung 1070 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
302+ | 0.24 EUR |
400+ | 0.18 EUR |
455+ | 0.16 EUR |
782+ | 0.092 EUR |
834+ | 0.086 EUR |
DMP4025SFGQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Drain current: -5.4A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Drain current: -5.4A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1469 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
98+ | 0.74 EUR |
221+ | 0.32 EUR |
233+ | 0.31 EUR |
DMP4025LSDQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -28A
Drain current: -6.1A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.14W
Application: automotive industry
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -28A
Drain current: -6.1A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.14W
Application: automotive industry
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
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DMP4025LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -30A
Drain current: -6.9A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -30A
Drain current: -6.9A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
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DMP4025LSSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -30A
Drain current: -6.9A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Application: automotive industry
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Mounting: SMD
Case: SO8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -30A
Drain current: -6.9A
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Application: automotive industry
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
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DMP4025SFGQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Drain current: -5.4A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Drain current: -5.4A
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
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DMN26D0UT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
150+ | 0.47 EUR |
DMN62D0UT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Drain current: 0.26A
Gate charge: 0.5nC
Power dissipation: 0.34W
On-state resistance: 3Ω
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Drain current: 0.26A
Gate charge: 0.5nC
Power dissipation: 0.34W
On-state resistance: 3Ω
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhancement
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DMN2710UT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.7A
Gate charge: 0.6nC
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Pulsed drain current: 5.6A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.7A
Gate charge: 0.6nC
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Pulsed drain current: 5.6A
Kind of channel: enhancement
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DMP21D0UT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -650mA
Gate charge: 1.5nC
Power dissipation: 0.33W
On-state resistance: 960mΩ
Gate-source voltage: ±8V
Pulsed drain current: -5A
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -650mA
Gate charge: 1.5nC
Power dissipation: 0.33W
On-state resistance: 960mΩ
Gate-source voltage: ±8V
Pulsed drain current: -5A
Kind of channel: enhancement
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DMN31D6UT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Drain current: 0.35A
Gate charge: 0.35nC
Power dissipation: 0.32W
On-state resistance: 2Ω
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Drain current: 0.35A
Gate charge: 0.35nC
Power dissipation: 0.32W
On-state resistance: 2Ω
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Kind of channel: enhancement
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DMP22D6UT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -310mA
Power dissipation: 0.15W
On-state resistance: 2.6Ω
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -310mA
Power dissipation: 0.15W
On-state resistance: 2.6Ω
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Kind of channel: enhancement
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DESD5V2S2UT-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Kind of package: reel; tape
Capacitance: 200pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 5.2V
Breakdown voltage: 6.4V
Max. forward impulse current: 15A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Kind of package: reel; tape
Capacitance: 200pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 5.2V
Breakdown voltage: 6.4V
Max. forward impulse current: 15A
Produkt ist nicht verfügbar
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SMAJ8.5A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.44÷10.4V; 27.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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D1V8L1BS2LP3-7 |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.1V; bidirectional; 0201,0603; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 1.8V
Breakdown voltage: 2.1V
Case: 0201; 0603
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.1V; bidirectional; 0201,0603; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 1.8V
Breakdown voltage: 2.1V
Case: 0201; 0603
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D2V5L1BS2LP3-7 |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6V; 15A; bidirectional; 0201,0603; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6V
Max. forward impulse current: 15A
Case: 0201; 0603
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6V; 15A; bidirectional; 0201,0603; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6V
Max. forward impulse current: 15A
Case: 0201; 0603
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D2V5H1BS2LP-7B |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6V; 85A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6V
Max. forward impulse current: 85A
Case: DFN1006-2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6V; 85A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6V
Max. forward impulse current: 85A
Case: DFN1006-2
Produkt ist nicht verfügbar
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SMAJ8.0A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP6023LEQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP6023LFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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SMAJ40CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 4877 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
410+ | 0.17 EUR |
527+ | 0.14 EUR |
867+ | 0.083 EUR |
916+ | 0.078 EUR |
AL5815W5-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
Output current: 15mA
Number of channels: 1
Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
Output current: 15mA
Number of channels: 1
Produkt ist nicht verfügbar
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AP5725WUG-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; TSOT23-6; SMD; 1÷1.4MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT23-6
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Integrated circuit features: soft-start function; UVLO (UnderVoltage LockOut)
Topology: boost
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; TSOT23-6; SMD; 1÷1.4MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT23-6
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Integrated circuit features: soft-start function; UVLO (UnderVoltage LockOut)
Topology: boost
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DMP2045U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
350+ | 0.2 EUR |
419+ | 0.17 EUR |
454+ | 0.16 EUR |
827+ | 0.087 EUR |
875+ | 0.082 EUR |
D3V3H1B2LP-7B |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 40A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 40A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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D3V3L1B2LP3-7 |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 12A; bidirectional; 0201,0603; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 12A; bidirectional; 0201,0603; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS116-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 4550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
834+ | 0.086 EUR |
1161+ | 0.062 EUR |
1441+ | 0.05 EUR |
2565+ | 0.028 EUR |
2703+ | 0.026 EUR |
BAS116Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 3550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2375+ | 0.03 EUR |
2600+ | 0.028 EUR |
2950+ | 0.024 EUR |
3350+ | 0.021 EUR |
3550+ | 0.02 EUR |
BAS116T-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAS116Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS116V-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double independent
Case: SOT563
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double independent
Case: SOT563
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAS116LPH4-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; DFN2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; DFN2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BZX84C13-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 2957 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
658+ | 0.11 EUR |
794+ | 0.09 EUR |
1000+ | 0.072 EUR |
1749+ | 0.041 EUR |
2565+ | 0.028 EUR |
2957+ | 0.024 EUR |
BZX84C13W-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C13Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KBJ610G |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 170A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 170A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMN3404L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 8999 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
286+ | 0.25 EUR |
400+ | 0.18 EUR |
463+ | 0.15 EUR |
1069+ | 0.067 EUR |
1132+ | 0.063 EUR |
DMP3125L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.65W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.65W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2392 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
468+ | 0.15 EUR |
538+ | 0.13 EUR |
581+ | 0.12 EUR |
879+ | 0.081 EUR |
930+ | 0.077 EUR |
AP2161DFMG-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AH1806-Z-7 |
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Hersteller: DIODES INCORPORATED
Category: Sensors and Transducers - Unclassified
Description: AH1806-Z-7
Category: Sensors and Transducers - Unclassified
Description: AH1806-Z-7
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.33 EUR |
SDT10A45P5-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AZ386MTR-E1 |
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Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 4÷16VDC; SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Supply voltage: 4...16V DC
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 4÷16VDC; SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Supply voltage: 4...16V DC
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FZT851QTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 25...300
Pulsed collector current: 20A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 25...300
Pulsed collector current: 20A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZT52C2V7-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 2018 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
794+ | 0.09 EUR |
1534+ | 0.047 EUR |
2018+ | 0.036 EUR |
BZT52C2V7S-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
511+ | 0.14 EUR |
589+ | 0.12 EUR |
999+ | 0.072 EUR |
1276+ | 0.056 EUR |
2874+ | 0.025 EUR |
2945+ | 0.024 EUR |
ZVN2120GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH