Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79036) > Seite 1297 nach 1318
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74LVC1G86FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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74LVC1G86FW5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: X1-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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74LVC1G86FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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74LVC1G86QW5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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74LVC1G86Z-7 | DIODES INCORPORATED |
![]() Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT553 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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ES3AB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 3A; 25ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Kind of package: reel; tape |
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B1100B-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Case: SMB Capacitance: 80pF Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
auf Bestellung 1206 Stücke: Lieferzeit 14-21 Tag (e) |
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B1100Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape Capacitance: 80pF Max. off-state voltage: 100V Max. forward voltage: 0.79V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 5mA Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SMA |
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TB1100H-13-F | DIODES INCORPORATED |
![]() Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; reel,tape; 100A; bidirectional Type of thyristor: TSS Max. off-state voltage: 90V Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 100A Semiconductor structure: bidirectional Breakover voltage: 130V |
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SMBJ78A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 86.7...99.7V Max. forward impulse current: 4.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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74LVC1G34QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of inputs: 1 |
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74LVC1G34QW5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of inputs: 1 |
Produkt ist nicht verfügbar |
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P6SMAJ54ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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74LVC3G07SS8-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; LVC Type of integrated circuit: digital Operating temperature: -40...150°C Case: SSOP8 Number of inputs: 3 Supply voltage: 1.65...5.5V DC Number of channels: 3 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: buffer; inverter Family: LVC Mounting: SMD |
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AP2141MPG-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD Kind of output: P-Channel Active logical level: low Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: MSOP8EP Supply voltage: 2.7...5.5V DC On-state resistance: 95mΩ Output current: 0.5A Type of integrated circuit: power switch Number of channels: 1 |
auf Bestellung 942 Stücke: Lieferzeit 14-21 Tag (e) |
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SBR2045CT-G | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 45V; 10Ax2; tube; TO220AB; SBR® Type of diode: rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Technology: SBR® Max. load current: 20A |
Produkt ist nicht verfügbar |
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SBR2045CTFP-G | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: ITO220AB Max. load current: 20A Technology: SBR® |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7176BMP-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD Mounting: SMD Case: MSOP8 Kind of package: reel; tape Output voltage: 0.8...3.12V Output current: 3A Voltage drop: 530mV Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 0.8...3.65V Manufacturer series: AP7176B Kind of voltage regulator: adjustable; LDO; linear Operating temperature: -40...85°C Tolerance: ±1.5% |
Produkt ist nicht verfügbar |
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MMBZ5238B-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 8.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 8.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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DCX123JU-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50/50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50/50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ |
auf Bestellung 1218 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ36A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMCJ36AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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FCX619TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 2W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100...165MHz Current gain: 30...400 Pulsed collector current: 6A |
Produkt ist nicht verfügbar |
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FCX605TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 900mW; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 1A Power dissipation: 0.9W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Kind of transistor: Darlington Current gain: 2000...100000 |
auf Bestellung 642 Stücke: Lieferzeit 14-21 Tag (e) |
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FCX617TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 15V; 3A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 3A Power dissipation: 2W Case: SOT89 Pulsed collector current: 12A Current gain: 80...415 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 80...120MHz |
Produkt ist nicht verfügbar |
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FCX658ATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 50MHz Current gain: 35...170 Pulsed collector current: 1A |
Produkt ist nicht verfügbar |
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FCX688BTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 12V; 3A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 3A Power dissipation: 1W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Current gain: 100...500 Pulsed collector current: 10A |
Produkt ist nicht verfügbar |
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ZXMS6004FFQTA | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Control voltage: 60V DC |
Produkt ist nicht verfügbar |
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ZXMS6004FFQ-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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ZXMS6004DGTA | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223 Case: SOT223 On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Supply voltage: 0...5.5V DC Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of integrated circuit: low-side Operating temperature: -40...125°C |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMS6004SGTA | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Control voltage: 60V DC |
Produkt ist nicht verfügbar |
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ZXMS6004DT8TA | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.2A; Ch: 2; N-Channel; SMD; SM8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SM8 On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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ZXMS6004DGQ-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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ZXMS6004N8-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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ZXMS6004N8Q-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Case: SO8 On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 0...5.5V DC Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of integrated circuit: low-side |
Produkt ist nicht verfügbar |
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ZXMS6004SGQTA | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3026SFDE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.4A Pulsed drain current: -50A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±25V On-state resistance: 54mΩ Mounting: SMD Gate charge: 19.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMP3026SFDE-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.4A Pulsed drain current: -50A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±25V On-state resistance: 54mΩ Mounting: SMD Gate charge: 19.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMP3026SFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.3A Pulsed drain current: -50A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±25V On-state resistance: 54mΩ Mounting: SMD Gate charge: 19.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMP3026SFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.3A Pulsed drain current: -50A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±25V On-state resistance: 54mΩ Mounting: SMD Gate charge: 19.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BAV99DWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series x2 Capacitance: 2pF Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN10A07ZTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.1A Power dissipation: 1.5W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1561 Stücke: Lieferzeit 14-21 Tag (e) |
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FCX1047ATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 10V Collector current: 4A Case: SOT89 Current gain: 60...1200 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Pulsed collector current: 20A Power dissipation: 2W |
Produkt ist nicht verfügbar |
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FCX1051ATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Case: SOT89 Current gain: 40...1200 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 155MHz Pulsed collector current: 10A Power dissipation: 2W |
Produkt ist nicht verfügbar |
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FCX1053ATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 75V; 3A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 75V Collector current: 3A Case: SOT89 Current gain: 40...1200 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 140MHz Pulsed collector current: 10A Power dissipation: 2W |
Produkt ist nicht verfügbar |
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AP7365-10YG-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2% Case: SOT89 Mounting: SMD Kind of package: reel; tape Output voltage: 1V Output current: 0.6A Voltage drop: 0.6V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7365 Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...85°C Tolerance: ±2% |
Produkt ist nicht verfügbar |
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ZXTP19100CZTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Case: SOT89 Current gain: 20...500 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 142MHz Pulsed collector current: 3A Power dissipation: 4.46W |
Produkt ist nicht verfügbar |
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BAT54LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: DFN2 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Power dissipation: 0.25W |
auf Bestellung 1255 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ20A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ200A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 200V Breakdown voltage: 224...248V Max. forward impulse current: 1.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 595 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ200AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 200V Breakdown voltage: 224...248V Max. forward impulse current: 1.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
P4SMAJ20ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
P6SMAJ20ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMG2301L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 171000 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C10T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
auf Bestellung 2424 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C10LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.25W; 10V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C10Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 10V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BZT52C10SQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BZT52C10TQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SMAJ78CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 86.7÷95.8V; 2.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 78V Breakdown voltage: 86.7...95.8V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
74LVC1G86FW4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G86FW5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G86FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G86QW5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G86Z-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ES3AB-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B1100B-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Capacitance: 80pF
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Capacitance: 80pF
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 1206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
332+ | 0.22 EUR |
451+ | 0.16 EUR |
695+ | 0.1 EUR |
736+ | 0.097 EUR |
B1100Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Capacitance: 80pF
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 5mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Capacitance: 80pF
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 5mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TB1100H-13-F |
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Hersteller: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 90V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 130V
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 90V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 130V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ78A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G34QSE-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of inputs: 1
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G34QW5-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of inputs: 1
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMAJ54ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC3G07SS8-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SSOP8
Number of inputs: 3
Supply voltage: 1.65...5.5V DC
Number of channels: 3
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Family: LVC
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SSOP8
Number of inputs: 3
Supply voltage: 1.65...5.5V DC
Number of channels: 3
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP2141MPG-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 1
auf Bestellung 942 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
75+ | 0.96 EUR |
278+ | 0.26 EUR |
293+ | 0.24 EUR |
SBR2045CT-G |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR2045CTFP-G |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: ITO220AB
Max. load current: 20A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: ITO220AB
Max. load current: 20A
Technology: SBR®
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
86+ | 0.83 EUR |
113+ | 0.64 EUR |
152+ | 0.47 EUR |
162+ | 0.44 EUR |
AP7176BMP-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Output voltage: 0.8...3.12V
Output current: 3A
Voltage drop: 530mV
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...3.65V
Manufacturer series: AP7176B
Kind of voltage regulator: adjustable; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±1.5%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Output voltage: 0.8...3.12V
Output current: 3A
Voltage drop: 530mV
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...3.65V
Manufacturer series: AP7176B
Kind of voltage regulator: adjustable; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±1.5%
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MMBZ5238B-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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DCX123JU-7-F |
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Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50/50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50/50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50/50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50/50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
auf Bestellung 1218 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
447+ | 0.16 EUR |
725+ | 0.099 EUR |
848+ | 0.084 EUR |
1099+ | 0.065 EUR |
1218+ | 0.059 EUR |
SMCJ36A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FCX619TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100...165MHz
Current gain: 30...400
Pulsed collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100...165MHz
Current gain: 30...400
Pulsed collector current: 6A
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FCX605TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 900mW; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 0.9W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Kind of transistor: Darlington
Current gain: 2000...100000
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 900mW; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 0.9W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Kind of transistor: Darlington
Current gain: 2000...100000
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
102+ | 0.71 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
FCX617TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 12A
Current gain: 80...415
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80...120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 12A
Current gain: 80...415
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80...120MHz
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FCX658ATA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 35...170
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 35...170
Pulsed collector current: 1A
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FCX688BTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 3A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 3A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 100...500
Pulsed collector current: 10A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 3A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 3A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 100...500
Pulsed collector current: 10A
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ZXMS6004FFQTA |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Produkt ist nicht verfügbar
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ZXMS6004FFQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004DGTA |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Operating temperature: -40...125°C
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.82 EUR |
61+ | 1.18 EUR |
97+ | 0.74 EUR |
103+ | 0.7 EUR |
1000+ | 0.67 EUR |
ZXMS6004SGTA |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Produkt ist nicht verfügbar
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ZXMS6004DT8TA |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.2A; Ch: 2; N-Channel; SMD; SM8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SM8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.2A; Ch: 2; N-Channel; SMD; SM8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SM8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6004DGQ-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6004N8-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6004N8Q-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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ZXMS6004SGQTA |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.59 EUR |
DMP3026SFDE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3026SFDE-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3026SFDF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
DMP3026SFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAV99DWQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Capacitance: 2pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Capacitance: 2pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
311+ | 0.23 EUR |
396+ | 0.18 EUR |
625+ | 0.11 EUR |
1070+ | 0.067 EUR |
1131+ | 0.063 EUR |
3000+ | 0.061 EUR |
ZXMN10A07ZTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.5W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.5W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1561 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
130+ | 0.55 EUR |
164+ | 0.44 EUR |
227+ | 0.32 EUR |
240+ | 0.3 EUR |
500+ | 0.29 EUR |
FCX1047ATA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 10V
Collector current: 4A
Case: SOT89
Current gain: 60...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 20A
Power dissipation: 2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 10V
Collector current: 4A
Case: SOT89
Current gain: 60...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 20A
Power dissipation: 2W
Produkt ist nicht verfügbar
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FCX1051ATA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 155MHz
Pulsed collector current: 10A
Power dissipation: 2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 155MHz
Pulsed collector current: 10A
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCX1053ATA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Pulsed collector current: 10A
Power dissipation: 2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Pulsed collector current: 10A
Power dissipation: 2W
Produkt ist nicht verfügbar
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AP7365-10YG-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2%
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1V
Output current: 0.6A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7365
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2%
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1V
Output current: 0.6A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7365
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±2%
Produkt ist nicht verfügbar
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ZXTP19100CZTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 142MHz
Pulsed collector current: 3A
Power dissipation: 4.46W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 142MHz
Pulsed collector current: 3A
Power dissipation: 4.46W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BAT54LP-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
auf Bestellung 1255 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
355+ | 0.2 EUR |
652+ | 0.11 EUR |
1255+ | 0.057 EUR |
SMAJ20A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
SMAJ200A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
374+ | 0.19 EUR |
589+ | 0.12 EUR |
SMAJ200AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P4SMAJ20ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMAJ20ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
DMG2301L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 171000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.046 EUR |
BZT52C10T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 2424 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
432+ | 0.17 EUR |
496+ | 0.14 EUR |
731+ | 0.098 EUR |
870+ | 0.082 EUR |
1856+ | 0.039 EUR |
1962+ | 0.036 EUR |
BZT52C10LP-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 10V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 10V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
222+ | 0.32 EUR |
240+ | 0.3 EUR |
BZT52C10Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C10SQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZT52C10TQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ78CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 86.7÷95.8V; 2.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 86.7÷95.8V; 2.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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Stück im Wert von UAH