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74LVC1G34SE-7 74LVC1G34SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEEA9D53E037E28&compId=74LVC1G34.pdf?ci_sign=5ea66389d29c19de6639775cdfa7e5e92b23919a Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
Manufacturer series: LVC
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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74AUP1G34FS3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68B260D3&compId=74AUP1G34.pdf?ci_sign=7869f58422f18f9e71da58d4d3a6c1fc864a865c Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN0808-4; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74LVC1G34FS3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FA40BDF40D3&compId=74LVC1G34.pdf?ci_sign=5193e3053be9002a88e0ca5faa411c2908976c61 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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SMBJ6.5CA-13-F DIODES INCORPORATED ds19002.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MMDT3946Q-7R DIODES INCORPORATED MMDT3946Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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ES3C-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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ES3CB-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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BZX84C47Q-7-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH6250SQ-7 DMPH6250SQ-7 DIODES INCORPORATED DMPH6250SQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMPH6250SQ-13 DMPH6250SQ-13 DIODES INCORPORATED DMPH6250SQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ22CA-13-F SMAJ22CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ22CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMAJ22A-13-F SMAJ22A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1265 Stücke:
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200+0.36 EUR
302+0.24 EUR
785+0.091 EUR
814+0.088 EUR
861+0.083 EUR
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SMAJ22AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P4SMAJ22ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZX84C22W-7-F BZX84C22W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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74AHCT1G04SE-7 74AHCT1G04SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED880833C2E44E32A18&compId=74AHCT1G04.pdf?ci_sign=50fd0ba927dba6f5d73604e75ef8d79d9e04cc8f Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C; AHC
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: single; 1
Kind of output: totem pole
Kind of gate: NOT
Family: AHC
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
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264+0.27 EUR
379+0.19 EUR
511+0.14 EUR
1009+0.072 EUR
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BZX84C24-7-F BZX84C24-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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417+0.17 EUR
596+0.12 EUR
720+0.099 EUR
1197+0.06 EUR
1909+0.037 EUR
3206+0.022 EUR
3379+0.021 EUR
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BZX84C24Q-7-F BZX84C24Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C24W-7-F DIODES INCORPORATED ds30066.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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DMP1045UFY4-7 DMP1045UFY4-7 DIODES INCORPORATED DMP1045UFY4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Drain-source voltage: -12V
Drain current: -5.1A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 23.7nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Mounting: SMD
Case: X2-DFN2015-3
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122+0.59 EUR
173+0.41 EUR
204+0.35 EUR
407+0.18 EUR
428+0.17 EUR
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DMN1045UFR4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C874A10696D8BF&compId=DMN1045UFR4.pdf?ci_sign=435e8826b216243eaa0c07f81f596d01617f5df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3; ESD
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: X2-DFN1010-3
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DMP2045UFY4-7 DIODES INCORPORATED DMP2045UFY4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1.49W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Mounting: SMD
Case: X2-DFN2015-3
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DMP1245UFCL-7 DIODES INCORPORATED DMP1245UFCL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 26.1nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Mounting: SMD
Case: X1-DFN1616-6
Produkt ist nicht verfügbar
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AP7313-30SAG-7 AP7313-30SAG-7 DIODES INCORPORATED AP7313.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Output voltage: 3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
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SD101CW-7-F SD101CW-7-F DIODES INCORPORATED ds11012.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 15mA; 1ns; reel,tape
Capacitance: 2.2pF
Mounting: SMD
Power dissipation: 0.4W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Max. off-state voltage: 40V
Max. forward voltage: 0.9V
Load current: 15mA
Semiconductor structure: single diode
Reverse recovery time: 1ns
Max. forward impulse current: 2A
auf Bestellung 458 Stücke:
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350+0.2 EUR
427+0.17 EUR
458+0.16 EUR
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SD101CWS-7-F SD101CWS-7-F DIODES INCORPORATED SD101AWS-SD101CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 15mA; 1ns; reel,tape
Capacitance: 2.2pF
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 40V
Max. forward voltage: 0.9V
Load current: 15mA
Semiconductor structure: single diode
Reverse recovery time: 1ns
Max. forward impulse current: 2A
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311+0.23 EUR
468+0.15 EUR
676+0.11 EUR
715+0.1 EUR
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FCX690BTA FCX690BTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C5552E30090749&compId=FCX690B.pdf?ci_sign=56ce3cd2fd89abb8c2fc5773b55fcca327b2b06e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 45V
Collector current: 2A
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135+0.53 EUR
171+0.42 EUR
321+0.22 EUR
341+0.21 EUR
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DXT690BP5-13 DIODES INCORPORATED ds31801.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
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DXT690BP5Q-13 DIODES INCORPORATED ds31801.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
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FZT690BQTA DIODES INCORPORATED FZT690B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 50...500
Pulsed collector current: 6A
Application: automotive industry
Produkt ist nicht verfügbar
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B160-13-F B160-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
auf Bestellung 2171 Stücke:
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385+0.19 EUR
538+0.13 EUR
697+0.1 EUR
787+0.091 EUR
1454+0.049 EUR
1539+0.046 EUR
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B3100-13-F B3100-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE891DDD95DCED5F3D3&compId=B370-B3100.pdf?ci_sign=38dd5e1518239dea05b1c3e44ca5e57d2fd2fa56 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward impulse current: 100A
Kind of package: reel; tape
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428+0.17 EUR
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B330-13-F B330-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE891DDE384AD3893D3&compId=b320-360.pdf?ci_sign=a7c4b845509518010457286ef84ddac7dd4d2bb2 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMC
Capacitance: 200pF
auf Bestellung 2742 Stücke:
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156+0.46 EUR
213+0.34 EUR
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PAM8006ATR DIODES INCORPORATED PAM8006A.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN32
Frequency: 300kHz
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
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PAM8012AZN DIODES INCORPORATED PAM8012.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: WCSP9
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 2W
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S3MB-13-F S3MB-13-F DIODES INCORPORATED ds16005.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Case: SMB
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
auf Bestellung 6412 Stücke:
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206+0.35 EUR
278+0.26 EUR
705+0.1 EUR
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RDBF310-13 DIODES INCORPORATED RDBF31-RDBF310.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
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SMBJ150A-13-F SMBJ150A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1375 Stücke:
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329+0.22 EUR
468+0.15 EUR
658+0.11 EUR
695+0.1 EUR
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ZVP3306A ZVP3306A DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1FCD473F398BF&compId=ZVP3306A.pdf?ci_sign=2463ccb5568b317a4519087ff50ff544fdc13bed Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 641 Stücke:
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82+0.87 EUR
159+0.45 EUR
168+0.43 EUR
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SMBJ120A-13-F SMBJ120A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTD113ZC-7-F DIODES INCORPORATED DDTD_XXXX_C.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
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ZXMN6A08E6TA DIODES INCORPORATED ZXMN6A08E6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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ZXMN6A08GQTA DIODES INCORPORATED ZXMN6A08GQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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1000+0.51 EUR
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ZXMN6A08GQTC DIODES INCORPORATED ZXMN6A08GQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
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SMBJ200A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SBRT10U60D1Q-13 DIODES INCORPORATED SBRT10U60D1Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
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MMDT3904Q-7-F DIODES INCORPORATED MMDT3904Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMDT3904VC-7 DIODES INCORPORATED MMDT3904VC.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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GBU806 GBU806 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC713906BD8748&compId=gbu8005-gbu810.pdf?ci_sign=b3d92291c686ef4b0377879590787a104b2f295a Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 63 Stücke:
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55+1.32 EUR
60+1.2 EUR
63+1.13 EUR
Mindestbestellmenge: 55
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AP1501-K5G-13 AP1501-K5G-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA621F8450DE28&compId=AP1501x-DTE.pdf?ci_sign=2aa117d64e708554a3d2bc14dc84a3bbd1987197 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Case: TO263-5
Mounting: SMD
Kind of package: reel; tape
Frequency: 150kHz
Output voltage: 1.23...37V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 4.5...40V DC
Efficiency: 73%
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -20...85°C
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PDU540-13 DIODES INCORPORATED ds30759.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 5000 Stücke:
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5000+0.56 EUR
Mindestbestellmenge: 5000
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74HCT164T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FBC0D3&compId=74HCT164.pdf?ci_sign=cb4c53cc543bd10d3e5ba41847f244abef166c07 Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of channels: 8
Family: HCT
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LM4041DADJFTA DIODES INCORPORATED LM4041.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4041DFTA DIODES INCORPORATED LM4041.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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SMAJ43CA-13-F SMAJ43CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 1003 Stücke:
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179+0.4 EUR
463+0.15 EUR
620+0.12 EUR
867+0.083 EUR
916+0.078 EUR
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AP2166MPG-13 DIODES INCORPORATED AP2166_76.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
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AP2176MPG-13 DIODES INCORPORATED AP2166_76.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
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ZXMS6004DN8-13 ZXMS6004DN8-13 DIODES INCORPORATED ZXMS6004DN8.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
auf Bestellung 183 Stücke:
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67+1.07 EUR
91+0.79 EUR
100+0.72 EUR
123+0.58 EUR
130+0.55 EUR
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ZXMS6004DN8Q-13 DIODES INCORPORATED ZXMS6004DN8Q.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Kind of integrated circuit: low-side
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74LVC1G34SE-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEEA9D53E037E28&compId=74LVC1G34.pdf?ci_sign=5ea66389d29c19de6639775cdfa7e5e92b23919a
74LVC1G34SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
Manufacturer series: LVC
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
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74AUP1G34FS3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68B260D3&compId=74AUP1G34.pdf?ci_sign=7869f58422f18f9e71da58d4d3a6c1fc864a865c
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN0808-4; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74LVC1G34FS3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FA40BDF40D3&compId=74LVC1G34.pdf?ci_sign=5193e3053be9002a88e0ca5faa411c2908976c61
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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SMBJ6.5CA-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MMDT3946Q-7R MMDT3946Q.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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ES3C-13-F ds14003.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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ES3CB-13-F ds14003.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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BZX84C47Q-7-F ds18001.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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DMPH6250SQ-7 DMPH6250SQ.pdf
DMPH6250SQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMPH6250SQ-13 DMPH6250SQ.pdf
DMPH6250SQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ22CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ22CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ22CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ22A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ22A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
302+0.24 EUR
785+0.091 EUR
814+0.088 EUR
861+0.083 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ22AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4SMAJ22ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C22W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C22W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT1G04SE-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED880833C2E44E32A18&compId=74AHCT1G04.pdf?ci_sign=50fd0ba927dba6f5d73604e75ef8d79d9e04cc8f
74AHCT1G04SE-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C; AHC
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: single; 1
Kind of output: totem pole
Kind of gate: NOT
Family: AHC
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 1009 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
379+0.19 EUR
511+0.14 EUR
1009+0.072 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C24-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C24-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 3622 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
596+0.12 EUR
720+0.099 EUR
1197+0.06 EUR
1909+0.037 EUR
3206+0.022 EUR
3379+0.021 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C24Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C24Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C24W-7-F ds30066.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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DMP1045UFY4-7 DMP1045UFY4.pdf
DMP1045UFY4-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Drain-source voltage: -12V
Drain current: -5.1A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 23.7nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Mounting: SMD
Case: X2-DFN2015-3
auf Bestellung 2369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
173+0.41 EUR
204+0.35 EUR
407+0.18 EUR
428+0.17 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
DMN1045UFR4-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C874A10696D8BF&compId=DMN1045UFR4.pdf?ci_sign=435e8826b216243eaa0c07f81f596d01617f5df3
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3; ESD
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: X2-DFN1010-3
Produkt ist nicht verfügbar
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DMP2045UFY4-7 DMP2045UFY4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1.49W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Mounting: SMD
Case: X2-DFN2015-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP1245UFCL-7 DMP1245UFCL.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 26.1nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Mounting: SMD
Case: X1-DFN1616-6
Produkt ist nicht verfügbar
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AP7313-30SAG-7 AP7313.pdf
AP7313-30SAG-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Output voltage: 3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
Produkt ist nicht verfügbar
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SD101CW-7-F ds11012.pdf
SD101CW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 15mA; 1ns; reel,tape
Capacitance: 2.2pF
Mounting: SMD
Power dissipation: 0.4W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Max. off-state voltage: 40V
Max. forward voltage: 0.9V
Load current: 15mA
Semiconductor structure: single diode
Reverse recovery time: 1ns
Max. forward impulse current: 2A
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
350+0.2 EUR
427+0.17 EUR
458+0.16 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
SD101CWS-7-F SD101AWS-SD101CWS.pdf
SD101CWS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 15mA; 1ns; reel,tape
Capacitance: 2.2pF
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 40V
Max. forward voltage: 0.9V
Load current: 15mA
Semiconductor structure: single diode
Reverse recovery time: 1ns
Max. forward impulse current: 2A
auf Bestellung 2462 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
311+0.23 EUR
468+0.15 EUR
676+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FCX690BTA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C5552E30090749&compId=FCX690B.pdf?ci_sign=56ce3cd2fd89abb8c2fc5773b55fcca327b2b06e
FCX690BTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 45V
Collector current: 2A
auf Bestellung 1068 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
135+0.53 EUR
171+0.42 EUR
321+0.22 EUR
341+0.21 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
DXT690BP5-13 ds31801.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
Produkt ist nicht verfügbar
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DXT690BP5Q-13 ds31801.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
Produkt ist nicht verfügbar
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FZT690BQTA FZT690B.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 50...500
Pulsed collector current: 6A
Application: automotive industry
Produkt ist nicht verfügbar
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B160-13-F b120-160b.pdf
B160-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
auf Bestellung 2171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
538+0.13 EUR
697+0.1 EUR
787+0.091 EUR
1454+0.049 EUR
1539+0.046 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
B3100-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE891DDD95DCED5F3D3&compId=B370-B3100.pdf?ci_sign=38dd5e1518239dea05b1c3e44ca5e57d2fd2fa56
B3100-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2831 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
196+0.37 EUR
246+0.29 EUR
428+0.17 EUR
451+0.16 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
B330-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE891DDE384AD3893D3&compId=b320-360.pdf?ci_sign=a7c4b845509518010457286ef84ddac7dd4d2bb2
B330-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMC
Capacitance: 200pF
auf Bestellung 2742 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
156+0.46 EUR
213+0.34 EUR
575+0.12 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
PAM8006ATR PAM8006A.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN32
Frequency: 300kHz
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Produkt ist nicht verfügbar
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PAM8012AZN PAM8012.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: WCSP9
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 2W
Produkt ist nicht verfügbar
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S3MB-13-F ds16005.pdf
S3MB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Case: SMB
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
auf Bestellung 6412 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
206+0.35 EUR
278+0.26 EUR
705+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 148
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RDBF310-13 RDBF31-RDBF310.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ150A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ150A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
262+0.27 EUR
329+0.22 EUR
468+0.15 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 186
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ZVP3306A pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1FCD473F398BF&compId=ZVP3306A.pdf?ci_sign=2463ccb5568b317a4519087ff50ff544fdc13bed
ZVP3306A
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
82+0.87 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 61
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SMBJ120A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ120A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DDTD113ZC-7-F DDTD_XXXX_C.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
Produkt ist nicht verfügbar
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ZXMN6A08E6TA ZXMN6A08E6.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.44 EUR
Mindestbestellmenge: 3000
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ZXMN6A08GQTA ZXMN6A08GQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.51 EUR
Mindestbestellmenge: 1000
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ZXMN6A08GQTC ZXMN6A08GQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.51 EUR
Mindestbestellmenge: 4000
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SMBJ200A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SBRT10U60D1Q-13 SBRT10U60D1Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
Produkt ist nicht verfügbar
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MMDT3904Q-7-F MMDT3904Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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MMDT3904VC-7 MMDT3904VC.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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GBU806 pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC713906BD8748&compId=gbu8005-gbu810.pdf?ci_sign=b3d92291c686ef4b0377879590787a104b2f295a
GBU806
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
60+1.2 EUR
63+1.13 EUR
Mindestbestellmenge: 55
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AP1501-K5G-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA621F8450DE28&compId=AP1501x-DTE.pdf?ci_sign=2aa117d64e708554a3d2bc14dc84a3bbd1987197
AP1501-K5G-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Case: TO263-5
Mounting: SMD
Kind of package: reel; tape
Frequency: 150kHz
Output voltage: 1.23...37V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 4.5...40V DC
Efficiency: 73%
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -20...85°C
Produkt ist nicht verfügbar
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PDU540-13 ds30759.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.56 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
74HCT164T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FBC0D3&compId=74HCT164.pdf?ci_sign=cb4c53cc543bd10d3e5ba41847f244abef166c07
Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of channels: 8
Family: HCT
Produkt ist nicht verfügbar
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LM4041DADJFTA LM4041.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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LM4041DFTA LM4041.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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SMAJ43CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ43CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 1003 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
463+0.15 EUR
620+0.12 EUR
867+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 179
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AP2166MPG-13 AP2166_76.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
Produkt ist nicht verfügbar
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AP2176MPG-13 AP2166_76.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
Produkt ist nicht verfügbar
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ZXMS6004DN8-13 ZXMS6004DN8.pdf
ZXMS6004DN8-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
91+0.79 EUR
100+0.72 EUR
123+0.58 EUR
130+0.55 EUR
Mindestbestellmenge: 67
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ZXMS6004DN8Q-13 ZXMS6004DN8Q.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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