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MJD31CUQ-13 DIODES INCORPORATED MJD31CUQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
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AP61200Z6-7 AP61200Z6-7 DIODES INCORPORATED AP61200_AP61201_AP61202_AP61203.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Topology: buck
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Integrated circuit features: PFM switching mode
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: SOT563
Operating temperature: -40...125°C
Output voltage: 0.6...3.6V DC
Output current: 2A
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Frequency: 1.3MHz
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222+0.32 EUR
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DMP34M4SPS-13 DIODES INCORPORATED DMP34M4SPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -350A
Drain-source voltage: -30V
Drain current: -17A
Gate charge: 127nC
On-state resistance: 6mΩ
Power dissipation: 3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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ZLLS1000TA ZLLS1000TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EECF7698CBD0143&compId=ZLLS1000.pdf?ci_sign=a68b1d6095be364b2e9e1ca995e031d881d8792c Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
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BAS16T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
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BAS16TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
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BAS16TWQ-13R-F BAS16TWQ-13R-F DIODES INCORPORATED BAS16TWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Reverse recovery time: 4ns
Capacitance: 2pF
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DMP213DUFA-7B DIODES INCORPORATED DMP213DUFA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X2-DFN0806-3
Polarisation: unipolar
Drain-source voltage: -25V
Pulsed drain current: -0.5A
Drain current: -125mA
Gate charge: 0.35nC
On-state resistance: 13Ω
Power dissipation: 0.36W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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D24V0S1U2TQ-7 D24V0S1U2TQ-7 DIODES INCORPORATED D24V0S1U2TQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
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374+0.19 EUR
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505+0.14 EUR
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SMBJ20A-13-F SMBJ20A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ20AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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BC857BFA-7B DIODES INCORPORATED BC857BFA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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74LVC1G00W5-7 74LVC1G00W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9CA0D3&compId=74LVC1G00.pdf?ci_sign=28b1816bdbcacac5ade0f1871e28b56dfc2ef59b Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F861C0D3&compId=74LVC1G00.pdf?ci_sign=2f4c57e4b3bd1ba3cd783fc5f3f9dc79487a9adf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F862C0D3&compId=74LVC1G00.pdf?ci_sign=c8b2ab1224b299feb4e567f2022566859f5a29c7 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9BA0D3&compId=74LVC1G00.pdf?ci_sign=6d393f324f1157640058f9214df18d5651ce1511 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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SMAJ200CA-13-F SMAJ200CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMG3404L-7 DMG3404L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C792BBE452F8BF&compId=DMG3404L.pdf?ci_sign=43c53fa63d912c6c8705a561a042cce84bd89e51 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMG3406L-13 DMG3406L-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C79BBF7A2078BF&compId=DMG3406L.pdf?ci_sign=32d58b8a920b330699f73edcb454730fa26ea4a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMG3402LQ-7 DMG3402LQ-7 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Application: automotive industry
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DMG3401LSN-7 DIODES INCORPORATED DMG3401LSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
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DMG3401LSNQ-7 DIODES INCORPORATED DMG3401LSNQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Application: automotive industry
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DMG3407SSN-7 DIODES INCORPORATED DMG3407SSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -3.6A
Gate charge: 16nC
On-state resistance: 72mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMG3402LQ-13 DMG3402LQ-13 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMG3404L-13 DMG3404L-13 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 30A
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 13.2nC
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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MMBTA56-7-F MMBTA56-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1941 Stücke:
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618+0.12 EUR
1036+0.069 EUR
1450+0.049 EUR
1941+0.037 EUR
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DMP2035UVT-7 DMP2035UVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3ED50524A748&compId=DMP2035UVT.pdf?ci_sign=9f296fb25f5c4370bc860ca04444f942409f1a72 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
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154+0.46 EUR
196+0.37 EUR
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459+0.16 EUR
463+0.15 EUR
3000+0.14 EUR
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B0540W-7-F B0540W-7-F DIODES INCORPORATED B0540W.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
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838+0.085 EUR
1104+0.065 EUR
2085+0.034 EUR
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DESD5V0S1BLD-7B DIODES INCORPORATED DESD5V0S1BLD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Case: DFN1006-2
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AP7375-33W5-7 AP7375-33W5-7 DIODES INCORPORATED AP7375.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.35A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7375
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...45V
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AP7375-33Y-13 DIODES INCORPORATED AP7375.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.35A
Case: SOT89
Mounting: SMD
Manufacturer series: AP7375
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...45V
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BC846B-13-F BC846B-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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DZT5401-13 DIODES INCORPORATED DZT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT223
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Produkt ist nicht verfügbar
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DXT5401-13 DIODES INCORPORATED ds31226.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT89
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Produkt ist nicht verfügbar
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MMST5401-7-F MMST5401-7-F DIODES INCORPORATED MMST5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMDT5401Q-7-F DIODES INCORPORATED MMDT5401Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMST5401Q-7-F DIODES INCORPORATED MMST5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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AS358P-E1 AS358P-E1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B79C079C6B164143&compId=AS358-358A-358B.pdf?ci_sign=eb1db62d9d0f3d6c05364836e9f10525722211c3 Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 2; DIP8; 3÷36VDC; tube
Type of integrated circuit: operational amplifier
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Voltage supply range: 3...36V DC
Kind of package: tube
Input offset voltage: 7mV
Power dissipation: 0.83W
Open-loop gain: 100dB
Number of channels: 2
auf Bestellung 116 Stücke:
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AS358GTR-G1 AS358GTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B79C079C6B164143&compId=AS358-358A-358B.pdf?ci_sign=eb1db62d9d0f3d6c05364836e9f10525722211c3 Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; TSSOP8; 3÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: TSSOP8
Operating temperature: -40...85°C
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Input offset voltage: 2mV
Power dissipation: 0.5W
Open-loop gain: 100dB
Number of channels: 2
auf Bestellung 37 Stücke:
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ZHCS400TA ZHCS400TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EED02F9DFDE8143&compId=ZHCS400.pdf?ci_sign=a7c92cab916dc5a8aec33f0d8372397be0595b5f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.4A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.4A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 0.25W
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
155+0.46 EUR
174+0.41 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 122
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DMPH2040UVTQ-7 DMPH2040UVTQ-7 DIODES INCORPORATED DMPH2040UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -3.9A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.5W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Produkt ist nicht verfügbar
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SDT30A100CT DIODES INCORPORATED SDT30A100CT-SDT30A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.73V
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Leakage current: 20mA
Max. forward voltage: 0.73V
Load current: 15A x2
Max. off-state voltage: 100V
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Case: TO220AB
Produkt ist nicht verfügbar
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SBR30A100CTB-13 DIODES INCORPORATED SBR30A100CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 15Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Kind of package: reel; tape
Technology: SBR®
Mounting: SMD
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
Case: D2PAK
Produkt ist nicht verfügbar
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SBR30A100CTFP DIODES INCORPORATED SBR30A100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 15Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Kind of package: tube
Technology: SBR®
Mounting: THT
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
Case: ITO220AB
Produkt ist nicht verfügbar
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SBR30A100CTE-G DIODES INCORPORATED SBR30A100CTE.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 15Ax2; tube; I2PAK; SBR®
Type of diode: rectifying
Kind of package: tube
Technology: SBR®
Mounting: THT
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
Case: I2PAK
Produkt ist nicht verfügbar
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SDT30A100CTFP DIODES INCORPORATED SDT30A100CT-SDT30A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Leakage current: 20mA
Max. forward voltage: 0.73V
Load current: 15A x2
Max. off-state voltage: 100V
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Case: TO220FP
Produkt ist nicht verfügbar
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BAS21TW-7 DIODES INCORPORATED BAS21TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ADA114EUQ-7 DIODES INCORPORATED ADA114EUQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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ADA114YUQ-13 ADA114YUQ-13 DIODES INCORPORATED ADA114YUQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 10000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA113TU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 1kΩ
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114EH-7 DIODES INCORPORATED ds30420.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; 10kΩ
Case: SOT563
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114EU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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DDA114TU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 10kΩ
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114TUQ-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114YH-7 DIODES INCORPORATED ds30420.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Case: SOT563
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 68
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114YU-7-F DDA114YU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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FMMT619 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=E1FC15F52B7B84F1A303005056AB0C4F&compId=FMMT619.pdf?ci_sign=0d2eb2a80031a7c927a1ec3bcec7b77e144a9419 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 625mW; SOT23
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Power dissipation: 0.625W
Collector current: 2A
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Produkt ist nicht verfügbar
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FMMT619QTA DIODES INCORPORATED FMMT619.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 806mW; SOT23
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Power dissipation: 0.806W
Collector current: 2A
Pulsed collector current: 6A
Current gain: 40...450
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Application: automotive industry
Frequency: 100...165MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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74LVCH244AT20-13 74LVCH244AT20-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEED684B8565E28&compId=74LVCH244A.pdf?ci_sign=66a0927eba355b3a6af69d202cea05b50343d9cd Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of output: 3-state
Quiescent current: 40µA
Supply voltage: 1.65...3.6V DC
Kind of package: reel; tape
Manufacturer series: LVC
Produkt ist nicht verfügbar
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BZT52C3V3T-7 BZT52C3V3T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 384 Stücke:
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384+0.19 EUR
Mindestbestellmenge: 384
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MJD31CUQ-13 MJD31CUQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
Produkt ist nicht verfügbar
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AP61200Z6-7 AP61200_AP61201_AP61202_AP61203.pdf
AP61200Z6-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Topology: buck
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Integrated circuit features: PFM switching mode
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: SOT563
Operating temperature: -40...125°C
Output voltage: 0.6...3.6V DC
Output current: 2A
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Frequency: 1.3MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
197+0.36 EUR
222+0.32 EUR
325+0.22 EUR
343+0.21 EUR
Mindestbestellmenge: 136
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DMP34M4SPS-13 DMP34M4SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -350A
Drain-source voltage: -30V
Drain current: -17A
Gate charge: 127nC
On-state resistance: 6mΩ
Power dissipation: 3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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ZLLS1000TA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EECF7698CBD0143&compId=ZLLS1000.pdf?ci_sign=a68b1d6095be364b2e9e1ca995e031d881d8792c
ZLLS1000TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
auf Bestellung 2731 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
137+0.52 EUR
302+0.24 EUR
319+0.22 EUR
Mindestbestellmenge: 97
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BAS16T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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BAS16TW-7-F ds30154.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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BAS16TWQ-13R-F BAS16TWQ.pdf
BAS16TWQ-13R-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Reverse recovery time: 4ns
Capacitance: 2pF
Produkt ist nicht verfügbar
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DMP213DUFA-7B DMP213DUFA.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X2-DFN0806-3
Polarisation: unipolar
Drain-source voltage: -25V
Pulsed drain current: -0.5A
Drain current: -125mA
Gate charge: 0.35nC
On-state resistance: 13Ω
Power dissipation: 0.36W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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D24V0S1U2TQ-7 D24V0S1U2TQ.pdf
D24V0S1U2TQ-7
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
374+0.19 EUR
417+0.17 EUR
505+0.14 EUR
682+0.1 EUR
957+0.075 EUR
1013+0.071 EUR
1053+0.068 EUR
Mindestbestellmenge: 313
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SMBJ20A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ20A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
213+0.33 EUR
Mindestbestellmenge: 193
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SMBJ20AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BC857BFA-7B BC857BFA.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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74LVC1G00W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9CA0D3&compId=74LVC1G00.pdf?ci_sign=28b1816bdbcacac5ade0f1871e28b56dfc2ef59b
74LVC1G00W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F861C0D3&compId=74LVC1G00.pdf?ci_sign=2f4c57e4b3bd1ba3cd783fc5f3f9dc79487a9adf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F862C0D3&compId=74LVC1G00.pdf?ci_sign=c8b2ab1224b299feb4e567f2022566859f5a29c7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G00SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9BA0D3&compId=74LVC1G00.pdf?ci_sign=6d393f324f1157640058f9214df18d5651ce1511
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ200CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ200CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMG3404L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C792BBE452F8BF&compId=DMG3404L.pdf?ci_sign=43c53fa63d912c6c8705a561a042cce84bd89e51
DMG3404L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
205+0.35 EUR
253+0.28 EUR
338+0.21 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
DMG3406L-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C79BBF7A2078BF&compId=DMG3406L.pdf?ci_sign=32d58b8a920b330699f73edcb454730fa26ea4a0
DMG3406L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMG3402LQ-7 DMG3402LQ.pdf
DMG3402LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMG3401LSN-7 DMG3401LSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMG3401LSNQ-7 DMG3401LSNQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
Gate charge: 25.1nC
On-state resistance: 85mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMG3407SSN-7 DMG3407SSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -3.6A
Gate charge: 16nC
On-state resistance: 72mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMG3402LQ-13 DMG3402LQ.pdf
DMG3402LQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DMG3404L-13 DMG3404L.pdf
DMG3404L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 30A
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 13.2nC
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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MMBTA56-7-F MMBTA55Q_MMBTA56Q.pdf
MMBTA56-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1941 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
618+0.12 EUR
1036+0.069 EUR
1450+0.049 EUR
1941+0.037 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
DMP2035UVT-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3ED50524A748&compId=DMP2035UVT.pdf?ci_sign=9f296fb25f5c4370bc860ca04444f942409f1a72
DMP2035UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
auf Bestellung 4157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
136+0.53 EUR
154+0.46 EUR
196+0.37 EUR
298+0.24 EUR
459+0.16 EUR
463+0.15 EUR
3000+0.14 EUR
Mindestbestellmenge: 117
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B0540W-7-F B0540W.pdf
B0540W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
auf Bestellung 2085 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
546+0.13 EUR
642+0.11 EUR
838+0.085 EUR
1104+0.065 EUR
2085+0.034 EUR
Mindestbestellmenge: 546
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DESD5V0S1BLD-7B DESD5V0S1BLD.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Case: DFN1006-2
Produkt ist nicht verfügbar
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AP7375-33W5-7 AP7375.pdf
AP7375-33W5-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.35A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7375
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...45V
Produkt ist nicht verfügbar
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AP7375-33Y-13 AP7375.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.35A
Case: SOT89
Mounting: SMD
Manufacturer series: AP7375
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...45V
Produkt ist nicht verfügbar
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BC846B-13-F
BC846B-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DZT5401-13 DZT5401.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT223
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Produkt ist nicht verfügbar
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DXT5401-13 ds31226.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT89
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Produkt ist nicht verfügbar
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MMST5401-7-F MMST5401.pdf
MMST5401-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMDT5401Q-7-F MMDT5401Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMST5401Q-7-F MMST5401.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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AS358P-E1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B79C079C6B164143&compId=AS358-358A-358B.pdf?ci_sign=eb1db62d9d0f3d6c05364836e9f10525722211c3
AS358P-E1
Hersteller: DIODES INCORPORATED
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 2; DIP8; 3÷36VDC; tube
Type of integrated circuit: operational amplifier
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Voltage supply range: 3...36V DC
Kind of package: tube
Input offset voltage: 7mV
Power dissipation: 0.83W
Open-loop gain: 100dB
Number of channels: 2
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
116+0.61 EUR
Mindestbestellmenge: 116
Im Einkaufswagen  Stück im Wert von  UAH
AS358GTR-G1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B79C079C6B164143&compId=AS358-358A-358B.pdf?ci_sign=eb1db62d9d0f3d6c05364836e9f10525722211c3
AS358GTR-G1
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; TSSOP8; 3÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: TSSOP8
Operating temperature: -40...85°C
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Input offset voltage: 2mV
Power dissipation: 0.5W
Open-loop gain: 100dB
Number of channels: 2
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ZHCS400TA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EED02F9DFDE8143&compId=ZHCS400.pdf?ci_sign=a7c92cab916dc5a8aec33f0d8372397be0595b5f
ZHCS400TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.4A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.4A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 0.25W
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
155+0.46 EUR
174+0.41 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 122
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DMPH2040UVTQ-7 DMPH2040UVTQ.pdf
DMPH2040UVTQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -3.9A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.5W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Produkt ist nicht verfügbar
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SDT30A100CT SDT30A100CT-SDT30A100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.73V
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Leakage current: 20mA
Max. forward voltage: 0.73V
Load current: 15A x2
Max. off-state voltage: 100V
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Case: TO220AB
Produkt ist nicht verfügbar
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SBR30A100CTB-13 SBR30A100CTB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 15Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Kind of package: reel; tape
Technology: SBR®
Mounting: SMD
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
Case: D2PAK
Produkt ist nicht verfügbar
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SBR30A100CTFP SBR30A100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 15Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Kind of package: tube
Technology: SBR®
Mounting: THT
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
Case: ITO220AB
Produkt ist nicht verfügbar
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SBR30A100CTE-G SBR30A100CTE.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 15Ax2; tube; I2PAK; SBR®
Type of diode: rectifying
Kind of package: tube
Technology: SBR®
Mounting: THT
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
Case: I2PAK
Produkt ist nicht verfügbar
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SDT30A100CTFP SDT30A100CT-SDT30A100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Leakage current: 20mA
Max. forward voltage: 0.73V
Load current: 15A x2
Max. off-state voltage: 100V
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Case: TO220FP
Produkt ist nicht verfügbar
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BAS21TW-7 BAS21TW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ADA114EUQ-7 ADA114EUQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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ADA114YUQ-13 ADA114YUQ.pdf
ADA114YUQ-13
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 10000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA113TU-7-F DDA_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 1kΩ
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114EH-7 ds30420.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; 10kΩ
Case: SOT563
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114EU-7-F DDA_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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DDA114TU-7-F DDA_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 10kΩ
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114TUQ-7-F DDA_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114YH-7 ds30420.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Case: SOT563
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 68
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDA114YU-7-F DDA_XXXX_U.pdf
DDA114YU-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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FMMT619 pVersion=0046&contRep=ZT&docId=E1FC15F52B7B84F1A303005056AB0C4F&compId=FMMT619.pdf?ci_sign=0d2eb2a80031a7c927a1ec3bcec7b77e144a9419
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 625mW; SOT23
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Power dissipation: 0.625W
Collector current: 2A
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Produkt ist nicht verfügbar
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FMMT619QTA FMMT619.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 806mW; SOT23
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Power dissipation: 0.806W
Collector current: 2A
Pulsed collector current: 6A
Current gain: 40...450
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Application: automotive industry
Frequency: 100...165MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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74LVCH244AT20-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEED684B8565E28&compId=74LVCH244A.pdf?ci_sign=66a0927eba355b3a6af69d202cea05b50343d9cd
74LVCH244AT20-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of output: 3-state
Quiescent current: 40µA
Supply voltage: 1.65...3.6V DC
Kind of package: reel; tape
Manufacturer series: LVC
Produkt ist nicht verfügbar
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BZT52C3V3T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C3V3T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
384+0.19 EUR
Mindestbestellmenge: 384
Im Einkaufswagen  Stück im Wert von  UAH
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