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FCX493TA FCX493TA DIODES INCORPORATED FCX493.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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BC857BFA-7B DIODES INCORPORATED BC857BFA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
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74LVC1G00W5-7 74LVC1G00W5-7 DIODES INCORPORATED 74LVC1G00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FW4-7 DIODES INCORPORATED 74LVC1G00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FZ4-7 DIODES INCORPORATED 74LVC1G00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00SE-7 DIODES INCORPORATED 74LVC1G00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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DMP2004K-7 DMP2004K-7 DIODES INCORPORATED DMP2004K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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417+0.17 EUR
579+0.12 EUR
673+0.11 EUR
1211+0.06 EUR
1283+0.06 EUR
3000+0.05 EUR
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DMN2040LTS-13 DMN2040LTS-13 DIODES INCORPORATED ds31941.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Case: TSSOP8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 0.89W
Polarisation: unipolar
Gate charge: 5.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
auf Bestellung 2016 Stücke:
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136+0.53 EUR
325+0.22 EUR
343+0.21 EUR
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BAS16WQ-7-F DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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MSB30KH-13 DIODES INCORPORATED MSB30KH.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 3A; Ifsm: 110A
Load current: 3A
Max. forward impulse current: 110A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: MSBL
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
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SMAJ200CA-13-F SMAJ200CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZT52C2V0-7-F BZT52C2V0-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±4.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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486+0.15 EUR
926+0.08 EUR
1374+0.05 EUR
2476+0.03 EUR
2605+0.03 EUR
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SMBJ22A-13-F SMBJ22A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMG3404L-7 DMG3404L-7 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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269+0.27 EUR
385+0.19 EUR
422+0.17 EUR
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DMG3406L-13 DMG3406L-13 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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DMG3402LQ-7 DMG3402LQ-7 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 11.7nC
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DMG3401LSN-7 DIODES INCORPORATED DMG3401LSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
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DMG3401LSNQ-7 DIODES INCORPORATED DMG3401LSNQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
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DMG3407SSN-7 DIODES INCORPORATED DMG3407SSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
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DMG3402LQ-13 DMG3402LQ-13 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 11.7nC
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DMG3404L-13 DMG3404L-13 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 13.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
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MMBTA56-7-F MMBTA56-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
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658+0.11 EUR
995+0.07 EUR
2051+0.03 EUR
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MMBTA56Q-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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SMCJ28A-13-F SMCJ28A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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FZT953QTA FZT953QTA DIODES INCORPORATED FZT953.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Pulsed collector current: 10A
auf Bestellung 469 Stücke:
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79+0.92 EUR
118+0.61 EUR
125+0.57 EUR
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FZT953TA FZT953TA DIODES INCORPORATED FZT953.pdf description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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2DA1213Y-13 DIODES INCORPORATED 2DA1213O_Y.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; SOT89
Pulsed collector current: 2.5A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Mounting: SMD
Case: SOT89
Frequency: 160MHz
Collector-emitter voltage: 50V
Current gain: 20...240
Collector current: 2A
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SMAJ51AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DMP2035U-7 DMP2035U-7 DIODES INCORPORATED DMP2035U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1412 Stücke:
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242+0.30 EUR
338+0.21 EUR
459+0.16 EUR
848+0.08 EUR
893+0.08 EUR
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DMP2035UVT-7 DMP2035UVT-7 DIODES INCORPORATED DMP2035UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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158+0.45 EUR
201+0.36 EUR
271+0.26 EUR
459+0.16 EUR
486+0.15 EUR
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SBR10U45SP5-13 SBR10U45SP5-13 DIODES INCORPORATED SBR10U45SP5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
Technology: SBR®
auf Bestellung 4900 Stücke:
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95+0.76 EUR
182+0.39 EUR
192+0.37 EUR
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US1K-13-F US1K-13-F DIODES INCORPORATED ds16008.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. forward voltage: 1.7V
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394+0.18 EUR
618+0.12 EUR
1112+0.06 EUR
1191+0.06 EUR
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MMSZ5231BS-7-F MMSZ5231BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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MMSZ5231BQ-7-F MMSZ5231BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DGD21814S14-13 DIODES INCORPORATED DGD21814.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
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DMN6075S-7 DMN6075S-7 DIODES INCORPORATED DMN6075S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.12Ω
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 844 Stücke:
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248+0.29 EUR
307+0.23 EUR
506+0.14 EUR
603+0.12 EUR
794+0.09 EUR
807+0.09 EUR
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RS1D-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
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RS1DB-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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B0540W-7-F B0540W-7-F DIODES INCORPORATED B0540W.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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DESD5V0S1BLD-7B DIODES INCORPORATED DESD5V0S1BLD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Type of diode: TVS
Mounting: SMD
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BZT52C11SQ-7-F DIODES INCORPORATED ds30093.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BSN20Q-7 BSN20Q-7 DIODES INCORPORATED BSN20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 415 Stücke:
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249+0.29 EUR
319+0.22 EUR
415+0.17 EUR
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BAS70-06Q-13-F BAS70-06Q-13-F DIODES INCORPORATED BAS70-05Q-BAS70-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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BAS70-06Q-7-F BAS70-06Q-7-F DIODES INCORPORATED BAS70-05Q-BAS70-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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AP3125BKTR-G1 AP3125BKTR-G1 DIODES INCORPORATED AP3125B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.35A
Frequency: 20...70kHz
Number of channels: 1
Case: SOT26
Mounting: SMD
Topology: flyback
Supply voltage: 10...25V
Duty cycle factor: 0...80%
Application: SMPS
Operating temperature: -20...125°C
Produkt ist nicht verfügbar
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SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 280 Stücke:
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280+0.26 EUR
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BZT52HC9V1WF-7 DIODES INCORPORATED BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 9.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 9.1V
Power dissipation: 0.83W
Produkt ist nicht verfügbar
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AP7375-33W5-7 AP7375-33W5-7 DIODES INCORPORATED AP7375.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.35A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...45V
Kind of package: reel; tape
Manufacturer series: AP7375
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
auf Bestellung 2076 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.80 EUR
149+0.48 EUR
182+0.39 EUR
371+0.19 EUR
394+0.18 EUR
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AP7375-33Y-13 DIODES INCORPORATED AP7375.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Operating temperature: -40...85°C
Case: SOT89
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.35A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...45V
Kind of package: reel; tape
Manufacturer series: AP7375
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Produkt ist nicht verfügbar
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KBP04G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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74AHCT595T16-13 DIODES INCORPORATED 74AHCT595.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: AHCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Kind of input: with Schmitt trigger
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AZ23C15-7-F AZ23C15-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 15V
auf Bestellung 5806 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
582+0.12 EUR
1067+0.07 EUR
1397+0.05 EUR
1480+0.05 EUR
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BC846B-13-F BC846B-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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74HCT08S14-13 74HCT08S14-13 DIODES INCORPORATED 74HCT08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
auf Bestellung 913 Stücke:
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97+0.74 EUR
160+0.45 EUR
196+0.37 EUR
265+0.27 EUR
521+0.14 EUR
550+0.13 EUR
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74HCT08T14-13 DIODES INCORPORATED 74HCT08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74LVC2G06FX4-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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74LVC2G06FZ4-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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74LVC2G06W6-7 74LVC2G06W6-7 DIODES INCORPORATED 74LVC2G06.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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DGD2110S16-13 DIODES INCORPORATED DGD2110-2113.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Supply voltage: 3.3...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 25ns
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FZT1049ATA FZT1049ATA DIODES INCORPORATED FZT1049A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 300...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 801 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
116+0.62 EUR
132+0.54 EUR
152+0.47 EUR
161+0.45 EUR
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FCX493TA FCX493.pdf
FCX493TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
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BC857BFA-7B BC857BFA.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
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74LVC1G00W5-7 74LVC1G00.pdf
74LVC1G00W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FW4-7 74LVC1G00.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FZ4-7 74LVC1G00.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00SE-7 74LVC1G00.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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DMP2004K-7 DMP2004K.pdf
DMP2004K-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
417+0.17 EUR
579+0.12 EUR
673+0.11 EUR
1211+0.06 EUR
1283+0.06 EUR
3000+0.05 EUR
Mindestbestellmenge: 209
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DMN2040LTS-13 ds31941.pdf
DMN2040LTS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Case: TSSOP8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 0.89W
Polarisation: unipolar
Gate charge: 5.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
auf Bestellung 2016 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
136+0.53 EUR
325+0.22 EUR
343+0.21 EUR
Mindestbestellmenge: 84
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BAS16WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MSB30KH-13 MSB30KH.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 3A; Ifsm: 110A
Load current: 3A
Max. forward impulse current: 110A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: MSBL
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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SMAJ200CA-13-F SMAJ_ser.pdf
SMAJ200CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BZT52C2V0-7-F BZT52Cxx_ser.pdf
BZT52C2V0-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±4.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 4187 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
486+0.15 EUR
926+0.08 EUR
1374+0.05 EUR
2476+0.03 EUR
2605+0.03 EUR
Mindestbestellmenge: 313
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SMBJ22A-13-F SMBJ_ser.pdf
SMBJ22A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMG3404L-7 DMG3404L.pdf
DMG3404L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 422 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
213+0.34 EUR
269+0.27 EUR
385+0.19 EUR
422+0.17 EUR
Mindestbestellmenge: 132
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DMG3406L-13 DMG3406L.pdf
DMG3406L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMG3402LQ-7 DMG3402LQ.pdf
DMG3402LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 11.7nC
Produkt ist nicht verfügbar
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DMG3401LSN-7 DMG3401LSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
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DMG3401LSNQ-7 DMG3401LSNQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
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DMG3407SSN-7 DMG3407SSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
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DMG3402LQ-13 DMG3402LQ.pdf
DMG3402LQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 11.7nC
Produkt ist nicht verfügbar
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DMG3404L-13 DMG3404L.pdf
DMG3404L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 13.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
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MMBTA56-7-F MMBTA55Q_MMBTA56Q.pdf
MMBTA56-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
auf Bestellung 2051 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
658+0.11 EUR
995+0.07 EUR
2051+0.03 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA56Q-7-F MMBTA55Q_MMBTA56Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMCJ28A-13-F SMCJ_ser.pdf
SMCJ28A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FZT953QTA FZT953.pdf
FZT953QTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Pulsed collector current: 10A
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.30 EUR
79+0.92 EUR
118+0.61 EUR
125+0.57 EUR
Mindestbestellmenge: 55
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FZT953TA description FZT953.pdf
FZT953TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
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2DA1213Y-13 2DA1213O_Y.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; SOT89
Pulsed collector current: 2.5A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Mounting: SMD
Case: SOT89
Frequency: 160MHz
Collector-emitter voltage: 50V
Current gain: 20...240
Collector current: 2A
Produkt ist nicht verfügbar
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SMAJ51AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMP2035U-7 DMP2035U.pdf
DMP2035U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1412 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
242+0.30 EUR
338+0.21 EUR
459+0.16 EUR
848+0.08 EUR
893+0.08 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
DMP2035UVT-7 DMP2035UVT.pdf
DMP2035UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
101+0.71 EUR
158+0.45 EUR
201+0.36 EUR
271+0.26 EUR
459+0.16 EUR
486+0.15 EUR
Mindestbestellmenge: 101
Im Einkaufswagen  Stück im Wert von  UAH
SBR10U45SP5-13 SBR10U45SP5.pdf
SBR10U45SP5-13
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
Technology: SBR®
auf Bestellung 4900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
95+0.76 EUR
182+0.39 EUR
192+0.37 EUR
Mindestbestellmenge: 66
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US1K-13-F ds16008.pdf
US1K-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. forward voltage: 1.7V
auf Bestellung 2184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
394+0.18 EUR
618+0.12 EUR
1112+0.06 EUR
1191+0.06 EUR
Mindestbestellmenge: 295
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MMSZ5231BS-7-F mmsz52xxbs_ser.pdf
MMSZ5231BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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MMSZ5231BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5231BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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DGD21814S14-13 DGD21814.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Produkt ist nicht verfügbar
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DMN6075S-7 DMN6075S.pdf
DMN6075S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.12Ω
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 844 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
248+0.29 EUR
307+0.23 EUR
506+0.14 EUR
603+0.12 EUR
794+0.09 EUR
807+0.09 EUR
834+0.09 EUR
Mindestbestellmenge: 179
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RS1D-13-F ds15002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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RS1DB-13-F ds15002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B0540W-7-F B0540W.pdf
B0540W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
596+0.12 EUR
760+0.09 EUR
855+0.08 EUR
2058+0.04 EUR
2184+0.03 EUR
Mindestbestellmenge: 455
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DESD5V0S1BLD-7B DESD5V0S1BLD.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Type of diode: TVS
Mounting: SMD
Produkt ist nicht verfügbar
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BZT52C11SQ-7-F ds30093.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BSN20Q-7 BSN20.pdf
BSN20Q-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
249+0.29 EUR
319+0.22 EUR
415+0.17 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BAS70-06Q-13-F BAS70-05Q-BAS70-06Q.pdf
BAS70-06Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAS70-06Q-7-F BAS70-05Q-BAS70-06Q.pdf
BAS70-06Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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AP3125BKTR-G1 AP3125B.pdf
AP3125BKTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.35A
Frequency: 20...70kHz
Number of channels: 1
Case: SOT26
Mounting: SMD
Topology: flyback
Supply voltage: 10...25V
Duty cycle factor: 0...80%
Application: SMPS
Operating temperature: -20...125°C
Produkt ist nicht verfügbar
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SMBJ40CA-13-F SMBJ_ser.pdf
SMBJ40CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
280+0.26 EUR
Mindestbestellmenge: 280
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BZT52HC9V1WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 9.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 9.1V
Power dissipation: 0.83W
Produkt ist nicht verfügbar
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AP7375-33W5-7 AP7375.pdf
AP7375-33W5-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.35A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...45V
Kind of package: reel; tape
Manufacturer series: AP7375
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
auf Bestellung 2076 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
149+0.48 EUR
182+0.39 EUR
371+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 90
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AP7375-33Y-13 AP7375.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Operating temperature: -40...85°C
Case: SOT89
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.35A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...45V
Kind of package: reel; tape
Manufacturer series: AP7375
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Produkt ist nicht verfügbar
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KBP04G ds21203.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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74AHCT595T16-13 74AHCT595.pdf
Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: AHCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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AZ23C15-7-F AZ23C_ser.pdf
AZ23C15-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 15V
auf Bestellung 5806 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
582+0.12 EUR
1067+0.07 EUR
1397+0.05 EUR
1480+0.05 EUR
Mindestbestellmenge: 385
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BC846B-13-F
BC846B-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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74HCT08S14-13 74HCT08.pdf
74HCT08S14-13
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
160+0.45 EUR
196+0.37 EUR
265+0.27 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 97
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74HCT08T14-13 74HCT08.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC2G06FX4-7 74LVC2G06.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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74LVC2G06FZ4-7 74LVC2G06.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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74LVC2G06W6-7 74LVC2G06.pdf
74LVC2G06W6-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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DGD2110S16-13 DGD2110-2113.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Supply voltage: 3.3...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 25ns
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FZT1049ATA FZT1049A.pdf
FZT1049ATA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 300...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 801 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
116+0.62 EUR
132+0.54 EUR
152+0.47 EUR
161+0.45 EUR
Mindestbestellmenge: 76
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