Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79599) > Seite 1283 nach 1327
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| BAV21WS-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Max. load current: 0.625A |
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| SBR10U300CTFP | DIODES INCORPORATED |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube Technology: SBR® Reverse recovery time: 35ns Max. forward voltage: 0.92V Max. load current: 10A Max. forward impulse current: 150A |
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| ES1J-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape |
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| 1SS361LP3-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape Type of diode: switching Case: X3-DFN0603-2 Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Semiconductor structure: single diode Kind of package: reel; tape Reverse recovery time: 4ns Features of semiconductor devices: small signal |
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| 1SS361LPH4-7B | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; reel,tape Type of diode: switching Case: X2-DFN1006-2 Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Semiconductor structure: single diode Kind of package: reel; tape Reverse recovery time: 4ns Features of semiconductor devices: small signal |
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| 1SS361UDJ-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape Type of diode: switching Case: SOT963 Mounting: SMD Max. off-state voltage: 80V Load current: 0.25A Semiconductor structure: double independent Kind of package: reel; tape Reverse recovery time: 4ns Features of semiconductor devices: small signal |
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| AZ431AZ-ATRE1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| AZ431AZ-ATRG1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| MMBT3904FA-7B | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3 Polarisation: bipolar Type of transistor: NPN Case: X2-DFN0806-3 Mounting: SMD Collector current: 0.2A Power dissipation: 435mW Pulsed collector current: 0.5A Current gain: 30...300 Collector-emitter voltage: 40V Quantity in set/package: 10000pcs. Kind of package: reel; tape Frequency: 300MHz |
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| MMBT3904FZ-7B | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3 Polarisation: bipolar Type of transistor: NPN Case: X2-DFN0606-3 Mounting: SMD Collector current: 0.2A Power dissipation: 925mW Pulsed collector current: 0.5A Current gain: 30...300 Collector-emitter voltage: 40V Quantity in set/package: 10000pcs. Kind of package: reel; tape Frequency: 300MHz |
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| MMBT3904LP-7B | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3 Polarisation: bipolar Type of transistor: NPN Case: X1-DFN1006-3 Mounting: SMD Collector current: 0.2A Power dissipation: 1W Pulsed collector current: 0.2A Current gain: 30...300 Collector-emitter voltage: 40V Quantity in set/package: 10000pcs. Kind of package: reel; tape Frequency: 300MHz |
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| MMBT3904Q-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23 Application: automotive industry Polarisation: bipolar Type of transistor: NPN Case: SOT23 Mounting: SMD Collector current: 0.2A Power dissipation: 0.35W Current gain: 30...300 Collector-emitter voltage: 40V Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 300MHz |
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| MMBT3906LP-7B | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
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| MMBT3906-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
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| MMBT3906FA-7B | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 435mW Case: X2-DFN0806-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Pulsed collector current: 0.5A Quantity in set/package: 10000pcs. |
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| MMBT3906FZ-7B | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 925mW Case: X2-DFN0606-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Pulsed collector current: 0.5A Quantity in set/package: 10000pcs. |
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| MMBT3906LP-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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| MMBT3906T-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT523 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 10000pcs. |
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| AZ431AN-ATRG1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| AZ431AR-ATRE1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| SMAJ5.0AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Leakage current: 1.6mA Features of semiconductor devices: glass passivated |
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| P4SMAJ5.0ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Leakage current: 0.4mA Features of semiconductor devices: glass passivated |
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| MUR160-T | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 75ns |
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| US1GWF-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape |
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| SBR10100CT | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. load current: 10A Technology: SBR® |
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| SBR10100CTB-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. load current: 10A Technology: SBR® |
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| SBR10100CTB | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Kind of package: tube Max. load current: 10A Technology: SBR® |
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| SBR10100CTFP-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube Max. load current: 10A Technology: SBR® |
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| SBR10100CTL-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: DPAK Kind of package: reel; tape Max. load current: 10A Technology: SBR® |
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| BCP5416QTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 100...150MHz Application: automotive industry Pulsed collector current: 2A Power dissipation: 2W Quantity in set/package: 1000pcs. |
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| BAV199TQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.125A x2 Reverse recovery time: 3µs Semiconductor structure: double series Case: SOT523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal Max. load current: 0.5A |
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| AZ431LBRTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| MCR100-8 | DIODES INCORPORATED |
 Category: SMD/THT thyristorsDescription: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Gate current: 50µA Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9A Features of semiconductor devices: sensitive gate Load current: 0.25A |
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| DSS4140U-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323 Mounting: SMD Case: SOT323 Type of transistor: NPN Power dissipation: 0.4W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 40V Current gain: 200...900 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4140V-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563 Mounting: SMD Case: SOT563 Type of transistor: NPN Power dissipation: 0.6W Collector current: 1A Pulsed collector current: 3A Collector-emitter voltage: 40V Current gain: 75...900 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160DS-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26 Mounting: SMD Case: SOT26 Type of transistor: NPN x2 Power dissipation: 1.7W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...420 Quantity in set/package: 3000pcs. Frequency: 150...220MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160FDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Type of transistor: NPN x2 Power dissipation: 2.47W Collector current: 1A Pulsed collector current: 1.5A Collector-emitter voltage: 60V Current gain: 70...430 Quantity in set/package: 3000pcs. Frequency: 90...175MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160T-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Power dissipation: 725mW Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160TQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Power dissipation: 725mW Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Application: automotive industry Polarisation: bipolar |
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| DSS4160U-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323 Mounting: SMD Case: SOT323 Type of transistor: NPN Power dissipation: 0.4W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| DSS4160V-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563 Mounting: SMD Case: SOT563 Type of transistor: NPN Power dissipation: 0.6W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
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| BC847BSQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. Application: automotive industry |
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SMBT70A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape Features of semiconductor devices: glass passivated Kind of package: reel; tape Mounting: SMD Case: SMB Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 5µA Max. forward impulse current: 5.3A Max. off-state voltage: 70V Breakdown voltage: 77.8...89.5V Peak pulse power dissipation: 0.6kW |
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| MB10F-13 | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 30A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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| RS2M-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
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| RS2MA-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
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| MMBT4401-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Pulsed collector current: 1A Quantity in set/package: 10000pcs. |
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| MMBT4401T-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT523 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 3000pcs. |
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| SMAJ30AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Leakage current: 5µA Features of semiconductor devices: glass passivated |
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| P4SMAJ30ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Leakage current: 1µA Features of semiconductor devices: glass passivated |
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| P6SMAJ30ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Leakage current: 1µA Features of semiconductor devices: glass passivated |
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| SMBJ33AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
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| MURS360B-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
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| SMCJ33CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
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| MMBT4403T-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT523 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
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| BC847AQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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| BC847AW-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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| SMAJ18AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Leakage current: 5µA Features of semiconductor devices: glass passivated |
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| GBJ3510-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Electrical mounting: THT Version: flat Max. forward voltage: 1.1V Leads: flat pin Case: GBJ Kind of package: tube Features of semiconductor devices: glass passivated |
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| MMBTA42-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Current gain: 25...40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Quantity in set/package: 10000pcs. |
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| BAV21WS-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
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| SBR10U300CTFP |
|
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Reverse recovery time: 35ns
Max. forward voltage: 0.92V
Max. load current: 10A
Max. forward impulse current: 150A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Reverse recovery time: 35ns
Max. forward voltage: 0.92V
Max. load current: 10A
Max. forward impulse current: 150A
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| ES1J-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
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| 1SS361LP3-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape
Type of diode: switching
Case: X3-DFN0603-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape
Type of diode: switching
Case: X3-DFN0603-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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| 1SS361LPH4-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; reel,tape
Type of diode: switching
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; reel,tape
Type of diode: switching
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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| 1SS361UDJ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape
Type of diode: switching
Case: SOT963
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: double independent
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape
Type of diode: switching
Case: SOT963
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: double independent
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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| AZ431AZ-ATRE1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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Stück im Wert von UAH
| AZ431AZ-ATRG1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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| MMBT3904FA-7B |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Polarisation: bipolar
Type of transistor: NPN
Case: X2-DFN0806-3
Mounting: SMD
Collector current: 0.2A
Power dissipation: 435mW
Pulsed collector current: 0.5A
Current gain: 30...300
Collector-emitter voltage: 40V
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Polarisation: bipolar
Type of transistor: NPN
Case: X2-DFN0806-3
Mounting: SMD
Collector current: 0.2A
Power dissipation: 435mW
Pulsed collector current: 0.5A
Current gain: 30...300
Collector-emitter voltage: 40V
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 300MHz
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Stück im Wert von UAH
| MMBT3904FZ-7B |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Polarisation: bipolar
Type of transistor: NPN
Case: X2-DFN0606-3
Mounting: SMD
Collector current: 0.2A
Power dissipation: 925mW
Pulsed collector current: 0.5A
Current gain: 30...300
Collector-emitter voltage: 40V
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Polarisation: bipolar
Type of transistor: NPN
Case: X2-DFN0606-3
Mounting: SMD
Collector current: 0.2A
Power dissipation: 925mW
Pulsed collector current: 0.5A
Current gain: 30...300
Collector-emitter voltage: 40V
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 300MHz
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Stück im Wert von UAH
| MMBT3904LP-7B |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Polarisation: bipolar
Type of transistor: NPN
Case: X1-DFN1006-3
Mounting: SMD
Collector current: 0.2A
Power dissipation: 1W
Pulsed collector current: 0.2A
Current gain: 30...300
Collector-emitter voltage: 40V
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Polarisation: bipolar
Type of transistor: NPN
Case: X1-DFN1006-3
Mounting: SMD
Collector current: 0.2A
Power dissipation: 1W
Pulsed collector current: 0.2A
Current gain: 30...300
Collector-emitter voltage: 40V
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBT3904Q-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Case: SOT23
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.35W
Current gain: 30...300
Collector-emitter voltage: 40V
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Case: SOT23
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.35W
Current gain: 30...300
Collector-emitter voltage: 40V
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBT3906LP-7B |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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| MMBT3906-13-F |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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| MMBT3906FA-7B |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBT3906FZ-7B |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBT3906LP-7 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBT3906T-13-F |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AZ431AN-ATRG1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AZ431AR-ATRE1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ5.0AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ5.0ADF-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
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| MUR160-T |
|
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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| US1GWF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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| SBR10100CT |
|
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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| SBR10100CTB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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| SBR10100CTB |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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| SBR10100CTFP-G |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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| SBR10100CTL-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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| BCP5416QTA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...150MHz
Application: automotive industry
Pulsed collector current: 2A
Power dissipation: 2W
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...150MHz
Application: automotive industry
Pulsed collector current: 2A
Power dissipation: 2W
Quantity in set/package: 1000pcs.
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| BAV199TQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Max. load current: 0.5A
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| AZ431LBRTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| MCR100-8 | |
|
Hersteller: DIODES INCORPORATED
Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 50µA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Features of semiconductor devices: sensitive gate
Load current: 0.25A
Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 50µA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Features of semiconductor devices: sensitive gate
Load current: 0.25A
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| DSS4140U-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 200...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 200...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DSS4140V-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DSS4160DS-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Case: SOT26
Type of transistor: NPN x2
Power dissipation: 1.7W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...420
Quantity in set/package: 3000pcs.
Frequency: 150...220MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Case: SOT26
Type of transistor: NPN x2
Power dissipation: 1.7W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...420
Quantity in set/package: 3000pcs.
Frequency: 150...220MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DSS4160FDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: NPN x2
Power dissipation: 2.47W
Collector current: 1A
Pulsed collector current: 1.5A
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Frequency: 90...175MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: NPN x2
Power dissipation: 2.47W
Collector current: 1A
Pulsed collector current: 1.5A
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Frequency: 90...175MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DSS4160T-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DSS4160TQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
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| DSS4160U-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSS4160V-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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Stück im Wert von UAH
| BC847BSQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Application: automotive industry
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| SMBT70A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Mounting: SMD
Case: SMB
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 5µA
Max. forward impulse current: 5.3A
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Mounting: SMD
Case: SMB
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 5µA
Max. forward impulse current: 5.3A
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Peak pulse power dissipation: 0.6kW
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| MB10F-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 4998 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 158+ | 0.45 EUR |
| 281+ | 0.25 EUR |
| 569+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| RS2M-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| RS2MA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MMBT4401-13-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
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| MMBT4401T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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| SMAJ30AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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| P4SMAJ30ADF-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: glass passivated
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| P6SMAJ30ADF-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: glass passivated
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| SMBJ33AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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| MURS360B-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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| SMCJ33CAQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| MMBT4403T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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| BC847AQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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| BC847AW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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| SMAJ18AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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| GBJ3510-F |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
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| MMBTA42-13-F |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
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