Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78495) > Seite 1286 nach 1309
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SMBJ75A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3080 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ7.5A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 46.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ7.5CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2135 Stücke: Lieferzeit 14-21 Tag (e) |
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AP8801SG-13 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92% Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Input voltage: 0.8...48V DC Efficiency: 92% Kind of integrated circuit: DC/DC converter Topology: buck Case: SO8 Frequency: 700kHz Output current: 0.5A Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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S5MC-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A Capacitance: 40pF Max. off-state voltage: 1kV Max. forward voltage: 1.15V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Case: SMC |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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AP61302Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Operating temperature: -40...85°C Case: SOT563 |
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AP61300Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Operating temperature: -40...85°C Case: SOT563 |
Produkt ist nicht verfügbar |
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AP61300QZ6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Application: automotive industry Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Operating temperature: -40...85°C Case: SOT563 |
Produkt ist nicht verfügbar |
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MJD31C-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
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MJD31CQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
Produkt ist nicht verfügbar |
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MJD31CUQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 16W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
Produkt ist nicht verfügbar |
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AP61200Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD Mounting: SMD Operating temperature: -40...125°C Case: SOT563 Frequency: 1.3MHz Output voltage: 0.6...3.6V DC Output current: 2A Type of integrated circuit: PMIC Input voltage: 2.3...5.5V DC Efficiency: 89% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck |
Produkt ist nicht verfügbar |
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ZVN2110GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 961 Stücke: Lieferzeit 14-21 Tag (e) |
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S1N-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1.2kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 30A Mounting: SMD Capacitance: 6pF Max. off-state voltage: 1.2kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: SMA Kind of package: reel; tape Type of diode: rectifying |
auf Bestellung 4990 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP34M4SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: -30V Drain current: -17A On-state resistance: 6mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 127nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -350A |
Produkt ist nicht verfügbar |
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DMN3023L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD Mounting: SMD Drain current: 5.8A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 0.6W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±20V Case: SOT23 Drain-source voltage: 30V |
auf Bestellung 4798 Stücke: Lieferzeit 14-21 Tag (e) |
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ZLLS1000TA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 1.16A Semiconductor structure: single diode Capacitance: 28pF Max. forward impulse current: 6.4A Kind of package: reel; tape Power dissipation: 0.8W |
auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.155A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SOT523 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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BAS16TW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Semiconductor structure: triple independent Features of semiconductor devices: small signal Kind of package: reel; tape Case: SOT363 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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BAS16TWQ-13R-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: triple independent Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 0.5A Case: SOT363 Max. forward voltage: 1.25V Application: automotive industry Capacitance: 2pF Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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FZT968TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 6A Power dissipation: 3W Case: SOT223 Pulsed collector current: 20A Current gain: 50...1000 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 80MHz |
Produkt ist nicht verfügbar |
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SMAJ40A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
auf Bestellung 2685 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ40AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
Produkt ist nicht verfügbar |
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AP22652W6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 65mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
Produkt ist nicht verfügbar |
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AP22652AW6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 65mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
Produkt ist nicht verfügbar |
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AP22652FDZ-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WDFN6 On-state resistance: 65mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
Produkt ist nicht verfügbar |
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AP2111H-1.8TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 1.8V Output current: 0.6A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2115M-3.3TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 3.3V Output current: 1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2111H-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 2.5V Output current: 0.6A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2113KTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 1.6...5.3V Output current: 0.6A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±3% Number of channels: 1 Input voltage: 2.5...5.5V Application: fans; motors |
Produkt ist nicht verfügbar |
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AP2115R5-1.2TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2115R5-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2115R5A-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2111MPG-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 2A Case: MSOP8EP Mounting: SMD Kind of package: reel; tape Number of channels: 1 Active logical level: high On-state resistance: 90mΩ Supply voltage: 2.7...5.5V DC Kind of output: P-Channel Kind of integrated circuit: high-side; USB switch |
Produkt ist nicht verfügbar |
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DMP213DUFA-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW Mounting: SMD Case: X2-DFN0806-3 Drain-source voltage: -25V Drain current: -125mA On-state resistance: 13Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 0.35nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -0.5A |
Produkt ist nicht verfügbar |
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DMT4002LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 116.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD |
Produkt ist nicht verfügbar |
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D5V0P1B2LP-7B | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; bidirectional; DFN1006-2 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA |
auf Bestellung 8935 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2022LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 13mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2499 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 2663 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.79A Pulsed drain current: 6.6A Power dissipation: 1.07W Case: TSOT26 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMN10H220LPDW-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.4A Pulsed drain current: 32A Power dissipation: 2.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMN10H220LE-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMN10H220LFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.7A Pulsed drain current: 8.8A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 6.7nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMN10H220LFVW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 44A Power dissipation: 2.4W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMN10H220L-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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D24V0S1U2TQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 27V; unidirectional; SOD523 Type of diode: TVS Max. off-state voltage: 24V Breakdown voltage: 27V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD |
auf Bestellung 2752 Stücke: Lieferzeit 14-21 Tag (e) |
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D5V0F1U2S9-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Max. forward impulse current: 1.5A |
auf Bestellung 9973 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP32D9UFZ-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.1A Pulsed drain current: -0.7A Power dissipation: 0.39W Case: X2-DFN0606-3 Gate-source voltage: ±10V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.35nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SMBJ20A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2773 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ20AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SBRT3U40P1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.49V Max. forward impulse current: 75A Kind of package: reel; tape |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SBRT3U60SAF-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 60V; 3A Type of diode: Schottky rectifying Case: SMA flat Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.53V Leakage current: 0.5mA Max. forward impulse current: 40A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SBRT3M40P1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.53V Leakage current: 8µA Max. forward impulse current: 70A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SBRT3M30LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; U-DFN3030-8; Trench SBR®; SMD; 30V; 3A Type of diode: Schottky rectifying Case: U-DFN3030-8 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.49V Leakage current: 5µA Max. forward impulse current: 30A Kind of package: reel; tape Reverse recovery time: 16ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SBRT3M60P1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Leakage current: 0.1mA Max. forward impulse current: 70A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SBRT3U60P1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.56V Leakage current: 0.15mA Max. forward impulse current: 70A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SBRT3U40P1Q-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.49V Leakage current: 30µA Max. forward impulse current: 75A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SBRT3U45SA-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; Trench SBR®; SMD; 45V; 3A Type of diode: Schottky rectifying Case: SMA Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 45V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.48V Leakage current: 30µA Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SBRT3U45SAF-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 45V; 3A Type of diode: Schottky rectifying Case: SMA flat Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 45V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.48V Leakage current: 30µA Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SBRT3U60P1Q-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.56V Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
SMBJ75A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3080 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
230+ | 0.31 EUR |
290+ | 0.25 EUR |
421+ | 0.17 EUR |
650+ | 0.11 EUR |
695+ | 0.10 EUR |
SMBJ7.5A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
216+ | 0.33 EUR |
275+ | 0.26 EUR |
421+ | 0.17 EUR |
596+ | 0.12 EUR |
633+ | 0.11 EUR |
SMBJ7.5CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2135 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
221+ | 0.32 EUR |
332+ | 0.22 EUR |
506+ | 0.14 EUR |
538+ | 0.13 EUR |
AP8801SG-13 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Input voltage: 0.8...48V DC
Efficiency: 92%
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: SO8
Frequency: 700kHz
Output current: 0.5A
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Input voltage: 0.8...48V DC
Efficiency: 92%
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: SO8
Frequency: 700kHz
Output current: 0.5A
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S5MC-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: SMC
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
169+ | 0.42 EUR |
275+ | 0.26 EUR |
293+ | 0.24 EUR |
AP61302Z6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP61300Z6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP61300QZ6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD31C-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD31CQ-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD31CUQ-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP61200Z6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT563
Frequency: 1.3MHz
Output voltage: 0.6...3.6V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT563
Frequency: 1.3MHz
Output voltage: 0.6...3.6V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZVN2110GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
73+ | 0.99 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
S1N-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 6pF
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 6pF
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Type of diode: rectifying
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
400+ | 0.18 EUR |
735+ | 0.10 EUR |
1097+ | 0.07 EUR |
1161+ | 0.06 EUR |
2500+ | 0.06 EUR |
DMP34M4SPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
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DMN3023L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Mounting: SMD
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Mounting: SMD
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 30V
auf Bestellung 4798 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
235+ | 0.30 EUR |
323+ | 0.22 EUR |
371+ | 0.19 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
ZLLS1000TA |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
126+ | 0.57 EUR |
164+ | 0.44 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
BAS16T-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
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BAS16TW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
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BAS16TWQ-13R-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
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FZT968TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
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SMAJ40A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
562+ | 0.13 EUR |
626+ | 0.11 EUR |
819+ | 0.09 EUR |
866+ | 0.08 EUR |
SMAJ40AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Produkt ist nicht verfügbar
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AP22652W6-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 65mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 65mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22652AW6-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 65mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 65mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22652FDZ-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WDFN6
On-state resistance: 65mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WDFN6
On-state resistance: 65mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2111H-1.8TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.8V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.8V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115M-3.3TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111H-2.5TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2113KTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.6...5.3V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 2.5...5.5V
Application: fans; motors
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.6...5.3V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 2.5...5.5V
Application: fans; motors
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AP2115R5-1.2TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5-2.5TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5A-2.5TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111MPG-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Case: MSOP8EP
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Active logical level: high
On-state resistance: 90mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Case: MSOP8EP
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Active logical level: high
On-state resistance: 90mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Kind of integrated circuit: high-side; USB switch
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DMP213DUFA-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
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DMT4002LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D5V0P1B2LP-7B |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
auf Bestellung 8935 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
327+ | 0.22 EUR |
429+ | 0.17 EUR |
710+ | 0.10 EUR |
1793+ | 0.04 EUR |
1894+ | 0.04 EUR |
DMP2022LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2499 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
106+ | 0.68 EUR |
202+ | 0.35 EUR |
214+ | 0.33 EUR |
DMN10H220LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2663 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
183+ | 0.39 EUR |
237+ | 0.30 EUR |
397+ | 0.18 EUR |
662+ | 0.11 EUR |
700+ | 0.10 EUR |
1000+ | 0.10 EUR |
DMN10H220LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN10H220LPDW-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN10H220LE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN10H220LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN10H220LFVW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN10H220L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D24V0S1U2TQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
auf Bestellung 2752 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
348+ | 0.21 EUR |
658+ | 0.11 EUR |
749+ | 0.10 EUR |
957+ | 0.08 EUR |
1013+ | 0.07 EUR |
D5V0F1U2S9-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
auf Bestellung 9973 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
212+ | 0.34 EUR |
506+ | 0.14 EUR |
725+ | 0.10 EUR |
770+ | 0.09 EUR |
DMP32D9UFZ-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.1A
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.1A
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ20A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2773 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
246+ | 0.29 EUR |
332+ | 0.22 EUR |
544+ | 0.13 EUR |
SMBJ20AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRT3U40P1-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 75A
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
262+ | 0.27 EUR |
424+ | 0.17 EUR |
532+ | 0.13 EUR |
1000+ | 0.12 EUR |
SBRT3U60SAF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.5mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.5mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRT3M40P1-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 8µA
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 8µA
Max. forward impulse current: 70A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRT3M30LP-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN3030-8; Trench SBR®; SMD; 30V; 3A
Type of diode: Schottky rectifying
Case: U-DFN3030-8
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 5µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 16ns
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN3030-8; Trench SBR®; SMD; 30V; 3A
Type of diode: Schottky rectifying
Case: U-DFN3030-8
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 5µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 16ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRT3M60P1-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Leakage current: 0.1mA
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Leakage current: 0.1mA
Max. forward impulse current: 70A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRT3U60P1-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Leakage current: 0.15mA
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Leakage current: 0.15mA
Max. forward impulse current: 70A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRT3U40P1Q-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 30µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 30µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRT3U45SA-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U45SAF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRT3U60P1Q-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH