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SMBJ33AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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MURS360B-13-F DIODES INCORPORATED MURS360B.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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SMCJ33CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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MMBT4403T-7-F DIODES INCORPORATED ds30273.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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BC847AQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC847AW-7-F DIODES INCORPORATED BC846AW-BC848CW.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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SMAJ18AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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GBJ3510-F DIODES INCORPORATED GBJ3510.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
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MMBTA42-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
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MMBTA42Q-7-F DIODES INCORPORATED DS_31_MMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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ES2BA-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; reel,tape
Case: SMA
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 25ns
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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ES2B-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMB; reel,tape
Case: SMB
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 25ns
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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BAS21DW-7 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT363
Kind of package: reel; tape
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BAS21DWAQ-7 DIODES INCORPORATED BAS21DWA.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT353
Kind of package: reel; tape
Application: automotive industry
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ES2A-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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ES2AA-13-F DIODES INCORPORATED ds14002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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BAS16HLP-7B DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HLPQ-7B DIODES INCORPORATED BAS16HLPQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTW-13 DIODES INCORPORATED BAS16HTW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13 DIODES INCORPORATED BAS16HTWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS16HTWQ-13R DIODES INCORPORATED BAS16HTWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BC856B-13-F DIODES INCORPORATED ds11207.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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BC856BQ-7-F DIODES INCORPORATED BC856AQ-BC857BQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC856BW-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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BC856BWQ-7 DIODES INCORPORATED BC856BWQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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SMAJ10AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
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P4SMAJ10ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: glass passivated
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BAV23AQ-7-F DIODES INCORPORATED BAV23AQ_CQ_SQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.625A
Application: automotive industry
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74LVC1G08W5-7 74LVC1G08W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726B00D3&compId=74LVC1G08.pdf?ci_sign=27b1c9820a075aadbf516c5042119fb4b65b3766 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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1087+0.066 EUR
Mindestbestellmenge: 358
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74LVC1G08FS3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EB820D3&compId=74LVC1G08.pdf?ci_sign=4a91346335e695bdb5a0781cbbe979375e2f33e8 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G08FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EB920D3&compId=74LVC1G08.pdf?ci_sign=ab7e20ebd73b6063eb33b33365d9bb1b8014a755 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G08FW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EBA20D3&compId=74LVC1G08.pdf?ci_sign=140acdb69251bb5150cc2bbcaa1e23ee8c679269 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X1-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G08FX4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EBB20D3&compId=74LVC1G08.pdf?ci_sign=42b10d5cb60e34463d56fa8baea40e5556c56989 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1409-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G08FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726A00D3&compId=74LVC1G08.pdf?ci_sign=2e4b523ccae539314c3cab1654675629e464ff09 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G08Z-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726C00D3&compId=74LVC1G08.pdf?ci_sign=31883187a6ba3503cce528579f237fb4a939f070 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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BFS17NTA DIODES INCORPORATED ds32160.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Produkt ist nicht verfügbar
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BFS17NQTA DIODES INCORPORATED ds32160.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Application: automotive industry
Produkt ist nicht verfügbar
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BAV23SQ-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.625A
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AZ431LANTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LANTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LARTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LAZTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBKTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBNTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBZTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZXTD718MCTA DIODES INCORPORATED ZXTD718MC.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
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SMBJ5.0AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DPLS350E-13 DIODES INCORPORATED ds31230.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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BC857BSQ-7-F DIODES INCORPORATED ds30373.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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SMBJ30CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DPLS160-7 DIODES INCORPORATED ds31389.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
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DPLS160V-7 DIODES INCORPORATED ds31251.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT563
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
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DMN2016UTS-13 DIODES INCORPORATED ds31995.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 5.73A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.88W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 36A
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DMN2019UTS-13 DIODES INCORPORATED DMN2019UTS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.78W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
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DMN21D2UFB-7 DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Power dissipation: 570mW
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 3Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Gate charge: 930pC
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 1A
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DMN21D2UFB-7B DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Power dissipation: 570mW
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 3Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Gate charge: 930pC
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 1A
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ES3BB-13-F ES3BB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985819C4B2E9878BF&compId=ES3x_ES3xB.pdf?ci_sign=bbc971ad2c666e0fafd28a26eff929f9f2d9aefd Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
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ES3B-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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GBJ2010-F DIODES INCORPORATED GBJ20005%7EGBJ2010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
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RS1JDFQ-13 DIODES INCORPORATED RS1JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: D-FLAT
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SMBJ33AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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MURS360B-13-F MURS360B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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SMCJ33CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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MMBT4403T-7-F ds30273.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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BC847AQ-7-F ds11108.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC847AW-7-F BC846AW-BC848CW.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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SMAJ18AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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GBJ3510-F GBJ3510.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
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MMBTA42-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
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MMBTA42Q-7-F DS_31_MMBTA42.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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ES2BA-13-F ds14002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; reel,tape
Case: SMA
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 25ns
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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ES2B-13-F ds14002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMB; reel,tape
Case: SMB
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 25ns
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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BAS21DW-7 Ds30617.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT363
Kind of package: reel; tape
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BAS21DWAQ-7 BAS21DWA.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT353
Kind of package: reel; tape
Application: automotive industry
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ES2A-13-F ds14002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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ES2AA-13-F ds14002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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BAS16HLP-7B
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HLPQ-7B BAS16HLPQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTW-13 BAS16HTW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS16HTWQ-13 BAS16HTWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS16HTWQ-13R BAS16HTWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BC856B-13-F ds11207.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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BC856BQ-7-F BC856AQ-BC857BQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC856BW-13-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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BC856BWQ-7 BC856BWQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMAJ10AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P4SMAJ10ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BAV23AQ-7-F BAV23AQ_CQ_SQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.625A
Application: automotive industry
Produkt ist nicht verfügbar
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74LVC1G08W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726B00D3&compId=74LVC1G08.pdf?ci_sign=27b1c9820a075aadbf516c5042119fb4b65b3766
74LVC1G08W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
auf Bestellung 1894 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
491+0.15 EUR
589+0.12 EUR
667+0.11 EUR
747+0.096 EUR
1042+0.069 EUR
1087+0.066 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G08FS3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EB820D3&compId=74LVC1G08.pdf?ci_sign=4a91346335e695bdb5a0781cbbe979375e2f33e8
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G08FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EB920D3&compId=74LVC1G08.pdf?ci_sign=ab7e20ebd73b6063eb33b33365d9bb1b8014a755
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G08FW5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EBA20D3&compId=74LVC1G08.pdf?ci_sign=140acdb69251bb5150cc2bbcaa1e23ee8c679269
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X1-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G08FX4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EBB20D3&compId=74LVC1G08.pdf?ci_sign=42b10d5cb60e34463d56fa8baea40e5556c56989
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1409-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G08FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726A00D3&compId=74LVC1G08.pdf?ci_sign=2e4b523ccae539314c3cab1654675629e464ff09
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G08Z-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726C00D3&compId=74LVC1G08.pdf?ci_sign=31883187a6ba3503cce528579f237fb4a939f070
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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BFS17NTA ds32160.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Produkt ist nicht verfügbar
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BFS17NQTA ds32160.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 0.05A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT23
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
Application: automotive industry
Produkt ist nicht verfügbar
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BAV23SQ-7-F BAV23A_C_S.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.625A
Produkt ist nicht verfügbar
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AZ431LANTR-G1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AZ431LANTR-E1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AZ431LARTR-G1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AZ431LAZTR-E1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AZ431LBKTR-G1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AZ431LBNTR-E1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AZ431LBZTR-G1 AZ431L.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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ZXTD718MCTA ZXTD718MC.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
auf Bestellung 2676 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
81+0.89 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ5.0AQ-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DPLS350E-13 ds31230.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Power dissipation: 1W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 100...200
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
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BC857BSQ-7-F ds30373.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Produkt ist nicht verfügbar
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SMBJ30CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DPLS160-7 ds31389.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
Produkt ist nicht verfügbar
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DPLS160V-7 ds31251.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT563
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
Produkt ist nicht verfügbar
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DMN2016UTS-13 ds31995.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 5.73A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.88W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 36A
Produkt ist nicht verfügbar
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DMN2019UTS-13 DMN2019UTS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.78W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
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DMN21D2UFB-7 DMN21D2UFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Power dissipation: 570mW
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 3Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Gate charge: 930pC
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 1A
Produkt ist nicht verfügbar
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DMN21D2UFB-7B DMN21D2UFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Power dissipation: 570mW
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 3Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Gate charge: 930pC
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 1A
Produkt ist nicht verfügbar
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ES3BB-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE985819C4B2E9878BF&compId=ES3x_ES3xB.pdf?ci_sign=bbc971ad2c666e0fafd28a26eff929f9f2d9aefd
ES3BB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
auf Bestellung 1741 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
123+0.58 EUR
141+0.51 EUR
233+0.31 EUR
247+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
ES3B-13-F ds14003.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GBJ2010-F GBJ20005%7EGBJ2010.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
Produkt ist nicht verfügbar
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RS1JDFQ-13 RS1JDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: D-FLAT
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