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GBU608 GBU608 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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RS1JDFQ-13 DIODES INCORPORATED RS1JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: D-FLAT
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FRS1JE DIODES INCORPORATED FRS1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; DO219AA; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: DO219AA
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SMBJ33CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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MMBTA63-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Quantity in set/package: 3000pcs.
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
511+0.14 EUR
1062+0.067 EUR
1598+0.045 EUR
2526+0.028 EUR
2660+0.027 EUR
Mindestbestellmenge: 334
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MMBTA64-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 10000...20000
Quantity in set/package: 3000pcs.
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SMAJ15CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ15AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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DXT2907A-13 DIODES INCORPORATED ds30944.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
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SMBJ36CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ36AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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FZT653QTA DIODES INCORPORATED FZT653Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Application: automotive industry
Pulsed collector current: 6A
Current gain: 25...300
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SBR20100CT DIODES INCORPORATED SBR20100CT%20N0911%20REV.A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20100CT-G DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20100CTFP DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20A60CTB DIODES INCORPORATED SBR20A60CT_CTB_CTFP.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
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SBR20A60CTBQ-13 DIODES INCORPORATED SBR20A60CTBQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Application: automotive industry
Type of diode: rectifying
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SBR20A60CTFP DIODES INCORPORATED SBR20A60CT_CTB_CTFP.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
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SMBJ30AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ24AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FMMT558QTA FMMT558QTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC9E62AF7978BF&compId=FMMT558.pdf?ci_sign=b8f509e86752ba26b9313c887dac3914a0b3869b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
147+0.49 EUR
394+0.18 EUR
417+0.17 EUR
Mindestbestellmenge: 103
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FMMTA42TA FMMTA42TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA4DA1303E90D20D6&compId=FMMTA42.pdf?ci_sign=0f407f16b47547f7b3d2a46babda81b20e5c48ef Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
385+0.19 EUR
430+0.17 EUR
574+0.12 EUR
1701+0.042 EUR
1750+0.041 EUR
Mindestbestellmenge: 278
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GBU402 GBU402 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D71195BF740D2&compId=GBU4_ser.pdf?ci_sign=0398007d0535d95d97c2eba676c71bae9770bb88 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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FMMT634QTA DIODES INCORPORATED FMMT634Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Pulsed collector current: 5A
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2N7002DWK-7 DIODES INCORPORATED 2N7002DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
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2N7002DWQ-7-F 2N7002DWQ-7-F DIODES INCORPORATED 2N7002DW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
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2N7002DWS-7 DIODES INCORPORATED 2N7002DWS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
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BAV99Q-7-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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MMDT3904-7-F DIODES INCORPORATED ds30088.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BAW56DW-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56DWQ-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAW56HDW-13 DIODES INCORPORATED BAW56HDW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56HDWQ-13 DIODES INCORPORATED BAW56HDWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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RS1MDFQ-13 DIODES INCORPORATED RS1MDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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RS1MEWFQ-7 DIODES INCORPORATED RS1MEWFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FRS1ME-7 DIODES INCORPORATED FRS1ME.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
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FRS1MEQ-7 DIODES INCORPORATED FRS1MEQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MUR120-T DIODES INCORPORATED ds30178.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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MMDT2222A-7-F DIODES INCORPORATED ds30125.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMBJ18CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ15CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DXT2222A-13 DIODES INCORPORATED DXT2222A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
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DZT2222A-13 DIODES INCORPORATED ds30481.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Produkt ist nicht verfügbar
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SMAJ24CA-13-F SMAJ24CA-13-F DIODES INCORPORATED SMAJ5.0CA-SMAJ200CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ24CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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ULN2002AS16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDFAAE0FE318FF3E0D6&compId=ULN200xA.pdf?ci_sign=b483eb8926ced65e8c451ebaf3cfd9e9f5e5f87a Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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SMAJ26AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P6SMAJ26ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMC2038LVT-7 DMC2038LVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B3693C22231BF&compId=DMC2038LVT-7.pdf?ci_sign=4537bfeb30579b43a5c636b126c347ecd8e8c93d Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1258 Stücke:
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250+0.29 EUR
348+0.21 EUR
404+0.18 EUR
610+0.12 EUR
642+0.11 EUR
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BCP5510TA BCP5510TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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BCP55TA BCP55TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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DMG2305UX-7 DMG2305UX-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA30F091E90748&compId=DMG2305UX.pdf?ci_sign=b2aee761d96502e454a9031a06ee1790bb085110 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Drain-source voltage: -20V
Drain current: -3.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
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718+0.1 EUR
1102+0.065 EUR
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PAM2305AABADJ PAM2305AABADJ DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98693F079AAD9D8BF&compId=PAM2305.pdf?ci_sign=7da08b3002ef5fb133e8e77a67b0ce132becac42 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Frequency: 1.5MHz
Output current: 1A
Type of integrated circuit: PMIC
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOT25
auf Bestellung 332 Stücke:
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218+0.33 EUR
231+0.31 EUR
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SMBJ15AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DDTC114EUAQ-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
Produkt ist nicht verfügbar
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BCX5316QTA DIODES INCORPORATED BCX5216Q_BCX5316Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Pulsed collector current: 2A
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SMBJ16AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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ZVP3310FTA ZVP3310FTA DIODES INCORPORATED ZVP3310F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.2A; 0.33W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.2A
On-state resistance: 20Ω
Type of transistor: P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 193 Stücke:
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84+0.86 EUR
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AP22815AWT-7 AP22815AWT-7 DIODES INCORPORATED AP22815-615.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT5
On-state resistance: 40mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
93+0.77 EUR
104+0.69 EUR
130+0.55 EUR
137+0.52 EUR
1000+0.51 EUR
3000+0.5 EUR
Mindestbestellmenge: 74
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E27836A9B598BF&compId=ZXMHC10A07N8.pdf?ci_sign=d45da52fa173af0a6bbffdf7ee5dcfbf562892fc Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2074 Stücke:
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59+1.22 EUR
82+0.88 EUR
87+0.83 EUR
500+0.8 EUR
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GBU608 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42
GBU608
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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RS1JDFQ-13 RS1JDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: D-FLAT
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FRS1JE FRS1JE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; DO219AA; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: DO219AA
Produkt ist nicht verfügbar
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SMBJ33CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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MMBTA63-7-F ds30055.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Quantity in set/package: 3000pcs.
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
511+0.14 EUR
1062+0.067 EUR
1598+0.045 EUR
2526+0.028 EUR
2660+0.027 EUR
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MMBTA64-7-F ds30055.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 10000...20000
Quantity in set/package: 3000pcs.
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SMAJ15CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Produkt ist nicht verfügbar
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SMAJ15AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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DXT2907A-13 ds30944.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
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SMBJ36CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ36AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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FZT653QTA FZT653Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Application: automotive industry
Pulsed collector current: 6A
Current gain: 25...300
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SBR20100CT SBR20100CT%20N0911%20REV.A.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
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SBR20100CT-G SBR20100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
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SBR20100CTFP SBR20100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
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SBR20A60CTB SBR20A60CT_CTB_CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Produkt ist nicht verfügbar
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SBR20A60CTBQ-13 SBR20A60CTBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Application: automotive industry
Type of diode: rectifying
Produkt ist nicht verfügbar
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SBR20A60CTFP SBR20A60CT_CTB_CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Produkt ist nicht verfügbar
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SMBJ30AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ24AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FMMT558QTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC9E62AF7978BF&compId=FMMT558.pdf?ci_sign=b8f509e86752ba26b9313c887dac3914a0b3869b
FMMT558QTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
147+0.49 EUR
394+0.18 EUR
417+0.17 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
FMMTA42TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA4DA1303E90D20D6&compId=FMMTA42.pdf?ci_sign=0f407f16b47547f7b3d2a46babda81b20e5c48ef
FMMTA42TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
385+0.19 EUR
430+0.17 EUR
574+0.12 EUR
1701+0.042 EUR
1750+0.041 EUR
Mindestbestellmenge: 278
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GBU402 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D71195BF740D2&compId=GBU4_ser.pdf?ci_sign=0398007d0535d95d97c2eba676c71bae9770bb88
GBU402
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FMMT634QTA FMMT634Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Pulsed collector current: 5A
Produkt ist nicht verfügbar
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2N7002DWK-7 2N7002DWK.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Produkt ist nicht verfügbar
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2N7002DWQ-7-F 2N7002DW.pdf
2N7002DWQ-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
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2N7002DWS-7 2N7002DWS.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Produkt ist nicht verfügbar
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BAV99Q-7-F BAV99.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMDT3904-7-F ds30088.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BAW56DW-7-F ds30146.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAW56DWQ-7-F ds30146.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAW56HDW-13 BAW56HDW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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BAW56HDWQ-13 BAW56HDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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RS1MDFQ-13 RS1MDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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RS1MEWFQ-7 RS1MEWFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FRS1ME-7 FRS1ME.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FRS1MEQ-7 FRS1MEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MUR120-T ds30178.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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MMDT2222A-7-F ds30125.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMBJ18CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ15CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DXT2222A-13 DXT2222A.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
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DZT2222A-13 ds30481.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Produkt ist nicht verfügbar
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SMAJ24CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ24CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Produkt ist nicht verfügbar
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SMAJ24CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Produkt ist nicht verfügbar
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ULN2002AS16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFAAE0FE318FF3E0D6&compId=ULN200xA.pdf?ci_sign=b483eb8926ced65e8c451ebaf3cfd9e9f5e5f87a
Hersteller: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ26AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P6SMAJ26ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMC2038LVT-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B3693C22231BF&compId=DMC2038LVT-7.pdf?ci_sign=4537bfeb30579b43a5c636b126c347ecd8e8c93d
DMC2038LVT-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
250+0.29 EUR
348+0.21 EUR
404+0.18 EUR
610+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
BCP5510TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046
BCP5510TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
265+0.27 EUR
Mindestbestellmenge: 265
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BCP55TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046
BCP55TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.52 EUR
Mindestbestellmenge: 47
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DMG2305UX-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA30F091E90748&compId=DMG2305UX.pdf?ci_sign=b2aee761d96502e454a9031a06ee1790bb085110
DMG2305UX-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Drain-source voltage: -20V
Drain current: -3.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
auf Bestellung 2077 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
459+0.16 EUR
629+0.11 EUR
718+0.1 EUR
1102+0.065 EUR
1166+0.061 EUR
Mindestbestellmenge: 295
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PAM2305AABADJ pVersion=0046&contRep=ZT&docId=005056AB82531EE98693F079AAD9D8BF&compId=PAM2305.pdf?ci_sign=7da08b3002ef5fb133e8e77a67b0ce132becac42
PAM2305AABADJ
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Frequency: 1.5MHz
Output current: 1A
Type of integrated circuit: PMIC
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOT25
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
124+0.58 EUR
218+0.33 EUR
231+0.31 EUR
Mindestbestellmenge: 103
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SMBJ15AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DDTC114EUAQ-7-F ds30321.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
Produkt ist nicht verfügbar
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BCX5316QTA BCX5216Q_BCX5316Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Pulsed collector current: 2A
Produkt ist nicht verfügbar
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SMBJ16AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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ZVP3310FTA ZVP3310F.pdf
ZVP3310FTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.2A; 0.33W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.2A
On-state resistance: 20Ω
Type of transistor: P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
146+0.49 EUR
193+0.37 EUR
Mindestbestellmenge: 84
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AP22815AWT-7 AP22815-615.pdf
AP22815AWT-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT5
On-state resistance: 40mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
93+0.77 EUR
104+0.69 EUR
130+0.55 EUR
137+0.52 EUR
1000+0.51 EUR
3000+0.5 EUR
Mindestbestellmenge: 74
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ZXMHC10A07N8TC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E27836A9B598BF&compId=ZXMHC10A07N8.pdf?ci_sign=d45da52fa173af0a6bbffdf7ee5dcfbf562892fc
ZXMHC10A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2074 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
59+1.22 EUR
82+0.88 EUR
87+0.83 EUR
500+0.8 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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