Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79020) > Seite 1275 nach 1317
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BC846ASQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Quantity in set/package: 3000pcs. Pulsed collector current: 0.2A |
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BC847CDLP-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 350mW; X2-DFN1310-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: X2-DFN1310-6 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
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BC857CQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Application: automotive industry Quantity in set/package: 3000pcs. Pulsed collector current: 0.2A |
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BC807-25W-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Pulsed collector current: 1A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817-25Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Quantity in set/package: 3000pcs. Pulsed collector current: 1A |
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BAV21HWF-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD123F Kind of package: reel; tape Application: automotive industry |
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BAV21HWFQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD123F Kind of package: reel; tape Application: automotive industry |
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BAV21WQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 5pF Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Application: automotive industry Max. load current: 0.625A |
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BAV21WS-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Max. load current: 0.625A |
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SBR10U300CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.92V Max. forward impulse current: 150A Kind of package: tube Max. load current: 10A Technology: SBR® |
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ES1J-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; reel,tape Type of diode: rectifying Case: SMA Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Reverse recovery time: 30ns Kind of package: reel; tape Features of semiconductor devices: superfast switching Mounting: SMD |
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1SS361LP3-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape Type of diode: switching Case: X3-DFN0603-2 Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: small signal Reverse recovery time: 4ns |
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1SS361LPH4-7B | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; reel,tape Type of diode: switching Case: X2-DFN1006-2 Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: small signal Reverse recovery time: 4ns |
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1SS361UDJ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape Type of diode: switching Case: SOT963 Mounting: SMD Max. off-state voltage: 80V Load current: 0.25A Semiconductor structure: double independent Kind of package: reel; tape Features of semiconductor devices: small signal Reverse recovery time: 4ns |
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AZ431AZ-ATRE1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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AZ431AZ-ATRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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MMBT3904FA-7B | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 435mW Case: X2-DFN0806-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.5A |
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MMBT3904FZ-7B | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 925mW Case: X2-DFN0606-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.5A |
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MMBT3904LP-7B | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.2A |
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MMBT3904Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
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MMBT3906LP-7B | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.2A |
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MMBT3906-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.2A |
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MMBT3906FA-7B | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 435mW Case: X2-DFN0806-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.5A |
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MMBT3906FZ-7B | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 925mW Case: X2-DFN0606-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.5A |
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MMBT3906LP-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. Pulsed collector current: 0.2A |
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MMBT3906T-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT523 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 10000pcs. |
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AZ431AN-ATRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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AZ431AR-ATRE1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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SMAJ5.0AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 1.6mA |
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P4SMAJ5.0ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 0.4mA |
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MUR160-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Reverse recovery time: 75ns |
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US1GWF-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SBR10100CT | DIODES INCORPORATED |
![]() ![]() Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. load current: 10A Technology: SBR® |
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SBR10100CTB-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. load current: 10A Technology: SBR® |
Produkt ist nicht verfügbar |
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SBR10100CTB | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Kind of package: tube Max. load current: 10A Technology: SBR® |
Produkt ist nicht verfügbar |
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SBR10100CTFP-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube Max. load current: 10A Technology: SBR® |
Produkt ist nicht verfügbar |
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SBR10100CTL-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: DPAK Kind of package: reel; tape Max. load current: 10A Technology: SBR® |
Produkt ist nicht verfügbar |
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BCP5416QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 100...150MHz Application: automotive industry Quantity in set/package: 1000pcs. Pulsed collector current: 2A Power dissipation: 2W |
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BAV199TQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.125A x2 Reverse recovery time: 3µs Semiconductor structure: double series Case: SOT523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
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AZ431LBRTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
Produkt ist nicht verfügbar |
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MCR100-8 | DIODES INCORPORATED |
![]() ![]() Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Gate current: 50µA Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9A Features of semiconductor devices: sensitive gate Load current: 0.25A |
Produkt ist nicht verfügbar |
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DSS4140U-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 200...900 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 0.4W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT323 |
Produkt ist nicht verfügbar |
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DSS4140V-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 75...900 Collector current: 1A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 0.6W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT563 |
Produkt ist nicht verfügbar |
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DSS4160DS-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26 Mounting: SMD Frequency: 150...220MHz Collector-emitter voltage: 60V Current gain: 100...420 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN x2 Power dissipation: 1.7W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT26 |
Produkt ist nicht verfügbar |
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DSS4160FDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6 Mounting: SMD Frequency: 90...175MHz Collector-emitter voltage: 60V Current gain: 70...430 Collector current: 1A Pulsed collector current: 1.5A Type of transistor: NPN x2 Power dissipation: 2.47W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
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DSS4160T-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 725mW Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT23 |
Produkt ist nicht verfügbar |
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DSS4160TQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Application: automotive industry Power dissipation: 725mW Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT23 |
Produkt ist nicht verfügbar |
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DSS4160U-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 0.4W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT323 |
Produkt ist nicht verfügbar |
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DSS4160V-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 0.6W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT563 |
Produkt ist nicht verfügbar |
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BC847BSQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Pulsed collector current: 0.2A Application: automotive industry |
Produkt ist nicht verfügbar |
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SMBT70A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape Max. off-state voltage: 70V Semiconductor structure: unidirectional Max. forward impulse current: 5.3A Breakdown voltage: 77.8...89.5V Leakage current: 5µA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.6kW Mounting: SMD Case: SMB |
Produkt ist nicht verfügbar |
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MB10F-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 30A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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RS2M-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
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RS2MA-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
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MMBT4401-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 10000pcs. Pulsed collector current: 1A |
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MMBT4401T-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT523 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 3000pcs. |
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SMAJ30AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
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P4SMAJ30ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 1µA |
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P6SMAJ30ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 1µA |
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SMBJ33AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
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BC846ASQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
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BC847CDLP-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 350mW; X2-DFN1310-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: X2-DFN1310-6
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 350mW; X2-DFN1310-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: X2-DFN1310-6
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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BC857CQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
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BC807-25W-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
424+ | 0.17 EUR |
679+ | 0.11 EUR |
953+ | 0.075 EUR |
2315+ | 0.031 EUR |
2440+ | 0.029 EUR |
BC817-25Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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BAV21HWF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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BAV21HWFQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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BAV21WQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
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BAV21WS-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
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SBR10U300CTFP |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.92V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.92V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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ES1J-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; reel,tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; reel,tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Mounting: SMD
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1SS361LP3-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape
Type of diode: switching
Case: X3-DFN0603-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape
Type of diode: switching
Case: X3-DFN0603-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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1SS361LPH4-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; reel,tape
Type of diode: switching
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; reel,tape
Type of diode: switching
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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1SS361UDJ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape
Type of diode: switching
Case: SOT963
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape
Type of diode: switching
Case: SOT963
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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AZ431AZ-ATRE1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431AZ-ATRG1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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MMBT3904FA-7B |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.5A
Produkt ist nicht verfügbar
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MMBT3904FZ-7B |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.5A
Produkt ist nicht verfügbar
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MMBT3904LP-7B |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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MMBT3904Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMBT3906LP-7B |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
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MMBT3906-13-F |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
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MMBT3906FA-7B |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.5A
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MMBT3906FZ-7B |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.5A
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MMBT3906LP-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
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MMBT3906T-13-F |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
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AZ431AN-ATRG1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431AR-ATRE1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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SMAJ5.0AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 1.6mA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 1.6mA
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P4SMAJ5.0ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 0.4mA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 0.4mA
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MUR160-T |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 75ns
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US1GWF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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SBR10100CT |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTB-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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SBR10100CTB |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTFP-G |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTL-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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BCP5416QTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
Pulsed collector current: 2A
Power dissipation: 2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
Pulsed collector current: 2A
Power dissipation: 2W
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BAV199TQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
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AZ431LBRTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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MCR100-8 | ![]() |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 50µA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Features of semiconductor devices: sensitive gate
Load current: 0.25A
Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 50µA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Features of semiconductor devices: sensitive gate
Load current: 0.25A
Produkt ist nicht verfügbar
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DSS4140U-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 200...900
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.4W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 200...900
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.4W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
Produkt ist nicht verfügbar
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DSS4140V-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 75...900
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT563
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 75...900
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT563
Produkt ist nicht verfügbar
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DSS4160DS-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Frequency: 150...220MHz
Collector-emitter voltage: 60V
Current gain: 100...420
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN x2
Power dissipation: 1.7W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT26
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Frequency: 150...220MHz
Collector-emitter voltage: 60V
Current gain: 100...420
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN x2
Power dissipation: 1.7W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT26
Produkt ist nicht verfügbar
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DSS4160FDB-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Frequency: 90...175MHz
Collector-emitter voltage: 60V
Current gain: 70...430
Collector current: 1A
Pulsed collector current: 1.5A
Type of transistor: NPN x2
Power dissipation: 2.47W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: U-DFN2020-6
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Frequency: 90...175MHz
Collector-emitter voltage: 60V
Current gain: 70...430
Collector current: 1A
Pulsed collector current: 1.5A
Type of transistor: NPN x2
Power dissipation: 2.47W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: U-DFN2020-6
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DSS4160T-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 725mW
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 725mW
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT23
Produkt ist nicht verfügbar
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DSS4160TQ-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 725mW
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 725mW
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT23
Produkt ist nicht verfügbar
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DSS4160U-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.4W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.4W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
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DSS4160V-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT563
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT563
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BC847BSQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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SMBT70A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
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MB10F-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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RS2M-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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RS2MA-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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MMBT4401-13-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
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MMBT4401T-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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SMAJ30AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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P4SMAJ30ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P6SMAJ30ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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SMBJ33AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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