Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78554) > Seite 1275 nach 1310
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MMBTA64-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Current gain: 10000...20000 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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SMAJ15CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
Produkt ist nicht verfügbar |
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SMAJ15AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
Produkt ist nicht verfügbar |
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DXT2907A-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.2W Case: SOT89 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 2500pcs. Pulsed collector current: 0.8A |
Produkt ist nicht verfügbar |
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SMBJ36CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 40÷46V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMBJ36AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 40÷46V; 10.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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FZT653QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 140...175MHz Application: automotive industry Pulsed collector current: 6A Current gain: 25...300 |
Produkt ist nicht verfügbar |
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SBR20100CT | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Technology: SBR® Max. load current: 20A |
Produkt ist nicht verfügbar |
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SBR20100CT-G | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Technology: SBR® Max. load current: 20A |
Produkt ist nicht verfügbar |
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SBR20100CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube Technology: SBR® Max. load current: 20A |
Produkt ist nicht verfügbar |
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SBR20A60CTB | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube Case: D2PAK Mounting: SMD Kind of package: tube Technology: SBR® Max. off-state voltage: 60V Max. load current: 20A Load current: 10A x2 Semiconductor structure: common cathode; double Type of diode: rectifying |
Produkt ist nicht verfügbar |
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SBR20A60CTBQ-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Technology: SBR® Max. off-state voltage: 60V Max. load current: 20A Load current: 10A x2 Semiconductor structure: common cathode; double Application: automotive industry Type of diode: rectifying |
Produkt ist nicht verfügbar |
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SBR20A60CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR® Case: ITO220AB Mounting: THT Kind of package: tube Technology: SBR® Max. off-state voltage: 60V Max. load current: 20A Load current: 10A x2 Semiconductor structure: common cathode; double Type of diode: rectifying |
Produkt ist nicht verfügbar |
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SMBJ30AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMBJ24AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 26.7÷30.7V; 15.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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FMMT558QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23 Quantity in set/package: 3000pcs. Frequency: 50MHz Collector-emitter voltage: 400V Current gain: 15...300 Collector current: 0.15A Type of transistor: PNP Application: automotive industry Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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FMMTA42TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23 Quantity in set/package: 3000pcs. Collector-emitter voltage: 300V Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.35W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 |
auf Bestellung 2498 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU402 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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FMMT634QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.9A Power dissipation: 0.806W Case: SOT23 Current gain: 0.6k...60k Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 140MHz Application: automotive industry Pulsed collector current: 5A |
Produkt ist nicht verfügbar |
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DMP10H4D2S-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.21A Power dissipation: 0.38W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 261mA Pulsed drain current: 1.1A Power dissipation: 0.45W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 1.04nC |
Produkt ist nicht verfügbar |
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2N7002DWQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Pulsed drain current: 0.8A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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2N7002DWS-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 247mA Pulsed drain current: 1.8A Power dissipation: 0.37W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 0.4nC |
Produkt ist nicht verfügbar |
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BAV99Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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MMDT3904-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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BAW56DW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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BAW56DWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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BAW56HDW-13 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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BAW56HDWQ-13 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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RS1MDFQ-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: D-FLAT Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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RS1MEWFQ-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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FRS1ME-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: DO219AA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FRS1MEQ-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: DO219AA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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MUR120-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 25ns |
Produkt ist nicht verfügbar |
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MMDT2222A-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT363 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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SMBJ18CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMBJ15CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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DDTC144VCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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DXT2222A-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.2W Case: SOT89 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 2500pcs. Pulsed collector current: 0.8A |
Produkt ist nicht verfügbar |
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DZT2222A-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.83W Case: SOT223 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 2500pcs. |
Produkt ist nicht verfügbar |
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SMAJ24CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMAJ24CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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ULN2002AS16-13 | DIODES INCORPORATED |
![]() Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...105°C Application: for inductive load Input voltage: 30V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SMAJ26AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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P6SMAJ26ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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DMC2038LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.1/-4.5A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.035/0.074Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2778 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC2038LVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Drain-source voltage: 20/-20V Drain current: 3/-2.1A On-state resistance: 0.056/0.168Ω Type of transistor: N/P-MOSFET Application: automotive industry Power dissipation: 0.5W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: TSOT26 |
auf Bestellung 2897 Stücke: Lieferzeit 14-21 Tag (e) |
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SB380-T | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 80V; 3A; DO201AD; Ufmax: 0.79V Max. forward impulse current: 100A Max. off-state voltage: 80V Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: THT Case: DO201AD Max. forward voltage: 0.79V Load current: 3A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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ES3DB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMB Features of semiconductor devices: superfast switching Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BCP5510TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2305UX-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23 Drain-source voltage: -20V Drain current: -3.3A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SOT23 |
auf Bestellung 2793 Stücke: Lieferzeit 14-21 Tag (e) |
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PAM2305AABADJ | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz Frequency: 1.5MHz Output current: 1A Type of integrated circuit: PMIC Input voltage: 2.5...5.5V DC Efficiency: 96% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Operating temperature: -40...85°C Case: TSOT25 |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ15AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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APX803L20-27SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 0.9...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 1µA Maximum output current: 20mA Threshold on-voltage: 2.7V Kind of package: reel; tape Delay time: 220ms Integrated circuit features: ±1,5% accuracy |
Produkt ist nicht verfügbar |
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APX803S00-31SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 10µA Maximum output current: 20mA Threshold on-voltage: 3.08V Kind of package: reel; tape Delay time: 1.7ms |
Produkt ist nicht verfügbar |
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APX803L05-39SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 0.9...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 1µA Maximum output current: 20mA Threshold on-voltage: 3.9V Kind of package: reel; tape Delay time: 55ms Integrated circuit features: ±1,5% accuracy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DDTC114EUAQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Application: automotive industry Current gain: 30 |
Produkt ist nicht verfügbar |
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ZXMS6005N8-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BCX5316QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Application: automotive industry Power dissipation: 2W Pulsed collector current: 2A |
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MMBTA64-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 10000...20000
Quantity in set/package: 3000pcs.
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 10000...20000
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ15CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ15AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DXT2907A-13 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ36CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ36AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FZT653QTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Application: automotive industry
Pulsed collector current: 6A
Current gain: 25...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Application: automotive industry
Pulsed collector current: 6A
Current gain: 25...300
Produkt ist nicht verfügbar
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SBR20100CT |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR20100CT-G |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SBR20100CTFP |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Produkt ist nicht verfügbar
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SBR20A60CTB |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SBR20A60CTBQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Application: automotive industry
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Application: automotive industry
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBR20A60CTFP |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ30AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ24AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷30.7V; 15.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷30.7V; 15.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FMMT558QTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Collector-emitter voltage: 400V
Current gain: 15...300
Collector current: 0.15A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Collector-emitter voltage: 400V
Current gain: 15...300
Collector current: 0.15A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.70 EUR |
147+ | 0.49 EUR |
397+ | 0.18 EUR |
421+ | 0.17 EUR |
FMMTA42TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
355+ | 0.20 EUR |
396+ | 0.18 EUR |
528+ | 0.14 EUR |
1593+ | 0.05 EUR |
1684+ | 0.04 EUR |
GBU402 |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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FMMT634QTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Pulsed collector current: 5A
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Pulsed collector current: 5A
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DMP10H4D2S-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.21A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.21A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
421+ | 0.17 EUR |
496+ | 0.14 EUR |
633+ | 0.11 EUR |
782+ | 0.09 EUR |
834+ | 0.09 EUR |
2N7002DWK-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Pulsed drain current: 1.1A
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.04nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Pulsed drain current: 1.1A
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.04nC
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2N7002DWQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Pulsed drain current: 0.8A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Pulsed drain current: 0.8A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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2N7002DWS-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Pulsed drain current: 1.8A
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.4nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Pulsed drain current: 1.8A
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.4nC
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BAV99Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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MMDT3904-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BAW56DW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56DWQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAW56HDW-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56HDWQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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RS1MDFQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Kind of package: reel; tape
Application: automotive industry
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RS1MEWFQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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FRS1ME-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
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FRS1MEQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Application: automotive industry
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MUR120-T |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
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MMDT2222A-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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SMBJ18CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ15CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DDTC144VCA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
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DXT2222A-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
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DZT2222A-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
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SMAJ24CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ24CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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ULN2002AS16-13 |
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Hersteller: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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SMAJ26AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P6SMAJ26ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMC2038LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2778 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
250+ | 0.29 EUR |
348+ | 0.21 EUR |
404+ | 0.18 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
DMC2038LVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Drain-source voltage: 20/-20V
Drain current: 3/-2.1A
On-state resistance: 0.056/0.168Ω
Type of transistor: N/P-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: TSOT26
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Drain-source voltage: 20/-20V
Drain current: 3/-2.1A
On-state resistance: 0.056/0.168Ω
Type of transistor: N/P-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: TSOT26
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.70 EUR |
158+ | 0.45 EUR |
203+ | 0.35 EUR |
400+ | 0.18 EUR |
424+ | 0.17 EUR |
1000+ | 0.16 EUR |
SB380-T |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 3A; DO201AD; Ufmax: 0.79V
Max. forward impulse current: 100A
Max. off-state voltage: 80V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO201AD
Max. forward voltage: 0.79V
Load current: 3A
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 3A; DO201AD; Ufmax: 0.79V
Max. forward impulse current: 100A
Max. off-state voltage: 80V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO201AD
Max. forward voltage: 0.79V
Load current: 3A
Semiconductor structure: single diode
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ES3DB-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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BCP5510TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 387 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.20 EUR |
387+ | 0.19 EUR |
BCP55TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.46 EUR |
DMG2305UX-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Drain-source voltage: -20V
Drain current: -3.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Drain-source voltage: -20V
Drain current: -3.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
auf Bestellung 2793 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
459+ | 0.16 EUR |
629+ | 0.11 EUR |
718+ | 0.10 EUR |
1104+ | 0.07 EUR |
1166+ | 0.06 EUR |
2500+ | 0.06 EUR |
PAM2305AABADJ |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Frequency: 1.5MHz
Output current: 1A
Type of integrated circuit: PMIC
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOT25
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Frequency: 1.5MHz
Output current: 1A
Type of integrated circuit: PMIC
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOT25
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.70 EUR |
124+ | 0.58 EUR |
220+ | 0.33 EUR |
233+ | 0.31 EUR |
SMBJ15AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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APX803L20-27SA-7 |
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Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 2.7V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 2.7V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
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APX803S00-31SA-7 |
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Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Delay time: 1.7ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Delay time: 1.7ms
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APX803L05-39SA-7 |
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Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 3.9V
Kind of package: reel; tape
Delay time: 55ms
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 3.9V
Kind of package: reel; tape
Delay time: 55ms
Integrated circuit features: ±1,5% accuracy
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DDTC114EUAQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
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ZXMS6005N8-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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BCX5316QTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Power dissipation: 2W
Pulsed collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Power dissipation: 2W
Pulsed collector current: 2A
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