Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78551) > Seite 1273 nach 1310
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ADTC124ECAQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Quantity in set/package: 3000pcs. Application: automotive industry Current gain: 56 |
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SMAJ5.0AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 1.6mA |
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P4SMAJ5.0ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 0.4mA |
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MUR160-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 75ns |
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US1GWF-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape |
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SBR10100CT | DIODES INCORPORATED |
![]() ![]() Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. load current: 10A Technology: SBR® |
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SBR10100CTB-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. load current: 10A Technology: SBR® |
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SBR10100CTB | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Kind of package: tube Max. load current: 10A Technology: SBR® |
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SBR10100CTFP-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube Max. load current: 10A Technology: SBR® |
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SBR10100CTL-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: DPAK Kind of package: reel; tape Max. load current: 10A Technology: SBR® |
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BCP5416QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 100...150MHz Application: automotive industry Quantity in set/package: 1000pcs. Pulsed collector current: 2A Power dissipation: 2W |
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DST3904DJ-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 300mW; SOT963 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.3W Case: SOT963 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
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DXT3904-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.2W Case: SOT89 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 2500pcs. |
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BAV199TQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 125mAx2; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 125mA x2 Reverse recovery time: 3µs Semiconductor structure: double series Case: SOT523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
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AZ431LBRTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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MCR100-8 | DIODES INCORPORATED |
![]() ![]() Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Gate current: 50µA Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9A Features of semiconductor devices: sensitive gate Load current: 0.25A |
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DSS4140U-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 200...900 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 0.4W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT323 |
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DSS4140V-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 75...900 Collector current: 1A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 0.6W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT563 |
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DSS4160DS-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26 Mounting: SMD Frequency: 150...220MHz Collector-emitter voltage: 60V Current gain: 100...420 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN x2 Power dissipation: 1.7W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT26 |
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DSS4160FDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6 Mounting: SMD Frequency: 90...175MHz Collector-emitter voltage: 60V Current gain: 70...430 Collector current: 1A Pulsed collector current: 1.5A Type of transistor: NPN x2 Power dissipation: 2.47W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: U-DFN2020-6 |
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DSS4160T-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 725mW Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT23 |
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DSS4160TQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Application: automotive industry Power dissipation: 725mW Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT23 |
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DSS4160U-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 0.4W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT323 |
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DSS4160V-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563 Mounting: SMD Frequency: 150MHz Collector-emitter voltage: 60V Current gain: 100...250 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 0.6W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT563 |
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BC847BSQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Pulsed collector current: 0.2A Application: automotive industry |
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SMBT70A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape Max. off-state voltage: 70V Semiconductor structure: unidirectional Max. forward impulse current: 5.3A Breakdown voltage: 77.8...89.5V Leakage current: 5µA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.6kW Mounting: SMD Case: SMB |
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MB10F-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 30A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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RS2M-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
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RS2MA-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
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MMBT4401-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 10000pcs. Pulsed collector current: 1A |
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MMBT4401T-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT523 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Quantity in set/package: 3000pcs. |
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SMAJ30AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Leakage current: 5µA Features of semiconductor devices: glass passivated |
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P4SMAJ30ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 1µA |
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P6SMAJ30ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 1µA |
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SMBJ33AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 36.7÷42.2V; 11.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
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MURS360B-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape Type of diode: rectifying Case: SMB Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape |
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SMCJ33CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
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ZTX603 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: TO92 Pulsed collector current: 4A Current gain: 500...100000 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 250MHz |
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ZTX601 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 1W Case: TO92 Pulsed collector current: 4A Current gain: 1000...100000 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 250MHz |
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ZTX603STZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: TO92 Pulsed collector current: 4A Current gain: 500...100000 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 250MHz |
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ZTX605 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 1A Power dissipation: 1W Case: TO92 Pulsed collector current: 4A Current gain: 500...100000 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 150MHz |
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ZTX601B | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 1W Case: TO92 Pulsed collector current: 4A Current gain: 5000...100000 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 250MHz |
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ZTX601BSTZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 1W Case: TO92 Pulsed collector current: 4A Current gain: 5000...100000 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 250MHz |
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ZTX601STZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 1W Case: TO92 Pulsed collector current: 4A Current gain: 1000...20000 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 250MHz |
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ZTX605STZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 1A Power dissipation: 1W Case: TO92 Pulsed collector current: 4A Current gain: 500...100000 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 150MHz |
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MMBT4403T-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT523 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
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BC847AQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. Pulsed collector current: 0.2A |
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BC847AW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Quantity in set/package: 3000pcs. Pulsed collector current: 0.2A |
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SMAJ18AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
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GBJ3510-F | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Electrical mounting: THT Version: flat Max. forward voltage: 1.1V Leads: flat pin Case: GBJ Features of semiconductor devices: glass passivated Kind of package: tube |
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MMBTA42-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Current gain: 25...40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Quantity in set/package: 10000pcs. |
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MMBTA42Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Current gain: 25...40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry Quantity in set/package: 3000pcs. |
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ES2BA-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; reel,tape Case: SMA Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 25ns Kind of package: reel; tape Type of diode: rectifying Mounting: SMD |
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ES2B-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMB; reel,tape Case: SMB Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 25ns Kind of package: reel; tape Type of diode: rectifying Mounting: SMD |
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AP2553W6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Output current: 2.1A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Case: SOT26 Mounting: SMD Kind of integrated circuit: high-side; USB switch On-state resistance: 135mΩ |
auf Bestellung 1310 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTD2090E6TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 1A Power dissipation: 1.7W Case: SOT26 Pulsed collector current: 2A Current gain: 20...450 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 215MHz |
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BAS21DW-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: double independent Features of semiconductor devices: small signal Case: SOT363 Kind of package: reel; tape |
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BAS21DWAQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Features of semiconductor devices: small signal Case: SOT353 Kind of package: reel; tape Application: automotive industry |
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ES2A-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
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ES2AA-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
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ADTC124ECAQ-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 56
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 56
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SMAJ5.0AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 1.6mA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 1.6mA
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P4SMAJ5.0ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 0.4mA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 0.4mA
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MUR160-T |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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US1GWF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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SBR10100CT |
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Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTB-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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SBR10100CTB |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; D2PAK; SBR®; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTFP-G |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 10A
Technology: SBR®
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SBR10100CTL-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5Ax2; DPAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. load current: 10A
Technology: SBR®
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BCP5416QTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
Pulsed collector current: 2A
Power dissipation: 2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
Pulsed collector current: 2A
Power dissipation: 2W
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DST3904DJ-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 300mW; SOT963
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT963
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 300mW; SOT963
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT963
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DXT3904-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
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BAV199TQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 125mAx2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 125mA x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 125mAx2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 125mA x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
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AZ431LBRTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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MCR100-8 | ![]() |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 50µA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Features of semiconductor devices: sensitive gate
Load current: 0.25A
Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 50µA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Features of semiconductor devices: sensitive gate
Load current: 0.25A
Produkt ist nicht verfügbar
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DSS4140U-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 200...900
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.4W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 200...900
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.4W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
Produkt ist nicht verfügbar
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DSS4140V-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 75...900
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT563
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 75...900
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT563
Produkt ist nicht verfügbar
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DSS4160DS-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Frequency: 150...220MHz
Collector-emitter voltage: 60V
Current gain: 100...420
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN x2
Power dissipation: 1.7W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT26
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Frequency: 150...220MHz
Collector-emitter voltage: 60V
Current gain: 100...420
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN x2
Power dissipation: 1.7W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT26
Produkt ist nicht verfügbar
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DSS4160FDB-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Frequency: 90...175MHz
Collector-emitter voltage: 60V
Current gain: 70...430
Collector current: 1A
Pulsed collector current: 1.5A
Type of transistor: NPN x2
Power dissipation: 2.47W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: U-DFN2020-6
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Mounting: SMD
Frequency: 90...175MHz
Collector-emitter voltage: 60V
Current gain: 70...430
Collector current: 1A
Pulsed collector current: 1.5A
Type of transistor: NPN x2
Power dissipation: 2.47W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: U-DFN2020-6
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DSS4160T-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 725mW
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 725mW
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT23
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DSS4160TQ-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 725mW
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 725mW; SOT23
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 725mW
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT23
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DSS4160U-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.4W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 400mW; SOT323
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.4W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT323
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DSS4160V-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT563
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT563
Mounting: SMD
Frequency: 150MHz
Collector-emitter voltage: 60V
Current gain: 100...250
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT563
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BC847BSQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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SMBT70A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
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MB10F-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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RS2M-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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RS2MA-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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MMBT4401-13-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
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MMBT4401T-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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SMAJ30AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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P4SMAJ30ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P6SMAJ30ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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SMBJ33AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷42.2V; 11.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷42.2V; 11.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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MURS360B-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
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SMCJ33CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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ZTX603 |
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Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX601 |
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Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX603STZ |
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Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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ZTX605 |
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Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
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ZTX601B |
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Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX601BSTZ |
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Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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ZTX601STZ |
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Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...20000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...20000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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ZTX605STZ |
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Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
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MMBT4403T-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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BC847AQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
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BC847AW-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
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SMAJ18AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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GBJ3510-F |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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MMBTA42-13-F |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 10000pcs.
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MMBTA42Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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ES2BA-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; reel,tape
Case: SMA
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; reel,tape
Case: SMA
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
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ES2B-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMB; reel,tape
Case: SMB
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMB; reel,tape
Case: SMB
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
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AP2553W6-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Output current: 2.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Case: SOT26
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
On-state resistance: 135mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Output current: 2.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Case: SOT26
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
On-state resistance: 135mΩ
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
211+ | 0.34 EUR |
227+ | 0.32 EUR |
355+ | 0.20 EUR |
376+ | 0.19 EUR |
ZXTD2090E6TA |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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BAS21DW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT363
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT363
Kind of package: reel; tape
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BAS21DWAQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT353
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT353
Kind of package: reel; tape
Application: automotive industry
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ES2A-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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ES2AA-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 25ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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