Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79035) > Seite 1269 nach 1318
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DMT6011LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 8.5A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 85A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMT6012LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 8.4A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.84W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 65A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DMT6015LFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 7.6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 18.9nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 60A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BC847CQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC847CT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
auf Bestellung 1163 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847CW-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC847CW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
auf Bestellung 2058 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54STQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOT523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Application: automotive industry |
Produkt ist nicht verfügbar |
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BAT54SW-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAT54SW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54SWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Application: automotive industry |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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B240-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
auf Bestellung 19058 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6004SK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252 Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.9W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 1153 Stücke: Lieferzeit 14-21 Tag (e) |
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PAM8620TR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC Operating temperature: -40...125°C Integrated circuit features: low distortion THD; low noise; stereo Kind of package: reel; tape Amplifier class: D Voltage supply range: 8...26V DC Mounting: SMD Case: QFN32 Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 15W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAV99Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAV99T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.155A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT523 Kind of package: reel; tape Features of semiconductor devices: small signal |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3098LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8 Case: SO8 Drain-source voltage: -30V Drain current: -3.3A On-state resistance: 65mΩ Type of transistor: P-MOSFET x2 Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -15A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MBRD20100CT-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO252/DPAK Max. forward voltage: 0.84V Max. forward impulse current: 150A Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SMBJ12CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2533 Stücke: Lieferzeit 14-21 Tag (e) |
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HD01-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP Max. off-state voltage: 100V Load current: 0.8A Max. forward impulse current: 30A Kind of package: reel; tape Electrical mounting: SMT Type of bridge rectifier: single-phase Case: MiniDIP |
auf Bestellung 3133 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54AWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
Produkt ist nicht verfügbar |
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ZTL431AQFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry |
auf Bestellung 2835 Stücke: Lieferzeit 14-21 Tag (e) |
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LMV358M8G-13 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1MHz Open-loop gain: 10dB Operating voltage: 2.7...5.5V Mounting: SMT Number of channels: 2 Case: MSOP8 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT600TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 140V Collector current: 2A Type of transistor: NPN Power dissipation: 3W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 1000pcs. Case: SOT223 |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTX653STZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO92 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 175MHz |
auf Bestellung 1624 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6402LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26 Case: TSOT26 Drain-source voltage: 30V Drain current: 5A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
auf Bestellung 2330 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTL432AFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
auf Bestellung 1542 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ58CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3235 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT3020LFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDBQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDFQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDFQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DMT3020LSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 32mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.5W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DMT3020UFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 35A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT30M9LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 160.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74HCT138S16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Operating temperature: -40...150°C Case: SO16 Number of inputs: 6 Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS; TTL Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Family: HCT Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74HCT138T16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Operating temperature: -40...150°C Case: TSSOP16 Number of inputs: 6 Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS; TTL Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Family: HCT Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BC857BT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
auf Bestellung 7957 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857BW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel Frequency: 200MHz Quantity in set/package: 3000pcs. |
auf Bestellung 5313 Stücke: Lieferzeit 14-21 Tag (e) |
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ADTC114EUAQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Application: automotive industry Current gain: 30 |
Produkt ist nicht verfügbar |
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DDTC114EUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. |
auf Bestellung 4864 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2138N-3.0TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD Mounting: SMD Operating temperature: -40...85°C Case: SOT23 Tolerance: ±2% Output voltage: 3V Output current: 0.25A Voltage drop: 0.6V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...6V Kind of package: reel; tape Manufacturer series: AP2138 Kind of voltage regulator: fixed; LDO; linear |
auf Bestellung 1472 Stücke: Lieferzeit 14-21 Tag (e) |
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DMMT3904W-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Kind of package: reel; tape Quantity in set/package: 3000pcs. Frequency: 300MHz Collector-emitter voltage: 40V Current gain: 30...300 Collector current: 0.2A Type of transistor: NPN x2 Power dissipation: 0.2W Polarisation: bipolar Mounting: SMD Case: SOT363 |
auf Bestellung 3030 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC2G14DW-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Operating temperature: -40...150°C Case: SOT363 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
74LVC2G14FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...150°C Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC2G14FX4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...150°C Case: X2-DFN1409-6 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC2G14FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...150°C Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74LVC2G14W6-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Operating temperature: -40...150°C Case: SOT26 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMP4015SK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Power dissipation: 3.5W Case: TO252 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 2166 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4015SSSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.8A Power dissipation: 1.45W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 2082 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G17FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC1G17FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74LVC1G17SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SOT353 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 200µA Kind of input: with Schmitt trigger Manufacturer series: LVC Kind of output: push-pull |
auf Bestellung 543 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G17W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SOT25 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 200µA Kind of input: with Schmitt trigger Manufacturer series: LVC Kind of output: push-pull |
auf Bestellung 1621 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G17Z-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; CMOS; SMD; SOT553; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT553 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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B140-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Capacitance: 110pF Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 5812 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT6011LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 85A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 85A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT6012LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.4A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.84W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 65A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.4A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.84W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 65A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT6015LFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 60A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 60A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847CQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847CT-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
491+ | 0.15 EUR |
633+ | 0.11 EUR |
1163+ | 0.061 EUR |
BC847CW-13-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847CW-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
625+ | 0.11 EUR |
758+ | 0.094 EUR |
1446+ | 0.049 EUR |
2058+ | 0.034 EUR |
BAT54STQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT54SW-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT54SW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
575+ | 0.12 EUR |
695+ | 0.1 EUR |
958+ | 0.075 EUR |
2273+ | 0.031 EUR |
2404+ | 0.03 EUR |
BAT54SWQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
500+ | 0.14 EUR |
B240-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
283+ | 0.25 EUR |
447+ | 0.16 EUR |
910+ | 0.079 EUR |
962+ | 0.074 EUR |
BC847BT-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 19058 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
715+ | 0.1 EUR |
1038+ | 0.069 EUR |
1247+ | 0.057 EUR |
2128+ | 0.034 EUR |
2977+ | 0.024 EUR |
3145+ | 0.023 EUR |
DMTH6004SK3Q-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1153 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
58+ | 1.24 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
500+ | 1 EUR |
PAM8620TR |
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Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; stereo
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 8...26V DC
Mounting: SMD
Case: QFN32
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; stereo
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 8...26V DC
Mounting: SMD
Case: QFN32
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Produkt ist nicht verfügbar
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BAV99Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BAV99T-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
348+ | 0.21 EUR |
692+ | 0.1 EUR |
1914+ | 0.037 EUR |
2024+ | 0.035 EUR |
DMP3098LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Case: SO8
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Case: SO8
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A
Mounting: SMD
Produkt ist nicht verfügbar
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MBRD20100CT-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO252/DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO252/DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
Produkt ist nicht verfügbar
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SMBJ12CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2533 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
237+ | 0.3 EUR |
350+ | 0.2 EUR |
667+ | 0.11 EUR |
705+ | 0.1 EUR |
HD01-T |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: MiniDIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: MiniDIP
auf Bestellung 3133 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
206+ | 0.35 EUR |
305+ | 0.23 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
BAT54AWQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZTL431AQFTA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 2835 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
214+ | 0.33 EUR |
248+ | 0.29 EUR |
309+ | 0.23 EUR |
459+ | 0.16 EUR |
486+ | 0.15 EUR |
LMV358M8G-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
99+ | 0.73 EUR |
118+ | 0.61 EUR |
382+ | 0.19 EUR |
407+ | 0.18 EUR |
FZT600TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 140V
Collector current: 2A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Case: SOT223
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 140V
Collector current: 2A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Case: SOT223
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
ZTX653STZ |
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Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 175MHz
auf Bestellung 1624 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
79+ | 0.92 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
1000+ | 0.43 EUR |
DMG6402LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
233+ | 0.31 EUR |
293+ | 0.24 EUR |
414+ | 0.17 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
ZTL432AFTA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
253+ | 0.28 EUR |
391+ | 0.18 EUR |
511+ | 0.14 EUR |
544+ | 0.13 EUR |
SMAJ58CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3235 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
254+ | 0.28 EUR |
338+ | 0.21 EUR |
532+ | 0.13 EUR |
863+ | 0.083 EUR |
926+ | 0.077 EUR |
DMT3020LFDB-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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Stück im Wert von UAH
DMT3020LFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
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Stück im Wert von UAH
DMT3020LFDBQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDFQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDFQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020UFDB-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT30M9LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 160.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 160.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
Im Einkaufswagen
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74HCT138S16-13 |
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Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74HCT138T16-13 |
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Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC857BT-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 7957 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
610+ | 0.12 EUR |
758+ | 0.094 EUR |
1553+ | 0.046 EUR |
2858+ | 0.025 EUR |
3031+ | 0.024 EUR |
BC857BW-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
auf Bestellung 5313 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
834+ | 0.086 EUR |
1153+ | 0.062 EUR |
1330+ | 0.054 EUR |
1880+ | 0.038 EUR |
3106+ | 0.023 EUR |
3290+ | 0.022 EUR |
ADTC114EUAQ-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC114EUA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
auf Bestellung 4864 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
511+ | 0.14 EUR |
794+ | 0.09 EUR |
953+ | 0.075 EUR |
1323+ | 0.054 EUR |
2370+ | 0.03 EUR |
2500+ | 0.029 EUR |
3000+ | 0.028 EUR |
AP2138N-3.0TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT23
Tolerance: ±2%
Output voltage: 3V
Output current: 0.25A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of package: reel; tape
Manufacturer series: AP2138
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT23
Tolerance: ±2%
Output voltage: 3V
Output current: 0.25A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of package: reel; tape
Manufacturer series: AP2138
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 1472 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
196+ | 0.37 EUR |
234+ | 0.31 EUR |
305+ | 0.23 EUR |
596+ | 0.12 EUR |
633+ | 0.11 EUR |
DMMT3904W-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
auf Bestellung 3030 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
309+ | 0.23 EUR |
391+ | 0.18 EUR |
428+ | 0.17 EUR |
650+ | 0.11 EUR |
685+ | 0.1 EUR |
74LVC2G14DW-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT363
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT363
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC2G14FW4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC2G14FX4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC2G14FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC2G14W6-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT26
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT26
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP4015SK3Q-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Power dissipation: 3.5W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Power dissipation: 3.5W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2166 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.87 EUR |
60+ | 1.19 EUR |
120+ | 0.6 EUR |
126+ | 0.57 EUR |
1000+ | 0.55 EUR |
DMP4015SSSQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.8A
Power dissipation: 1.45W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.8A
Power dissipation: 1.45W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2082 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
51+ | 1.43 EUR |
85+ | 0.85 EUR |
89+ | 0.81 EUR |
500+ | 0.77 EUR |
74LVC1G17FW4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G17FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G17SE-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Manufacturer series: LVC
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Manufacturer series: LVC
Kind of output: push-pull
auf Bestellung 543 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
358+ | 0.2 EUR |
439+ | 0.16 EUR |
543+ | 0.13 EUR |
74LVC1G17W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Manufacturer series: LVC
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Manufacturer series: LVC
Kind of output: push-pull
auf Bestellung 1621 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
309+ | 0.23 EUR |
391+ | 0.18 EUR |
863+ | 0.083 EUR |
1397+ | 0.051 EUR |
1480+ | 0.048 EUR |
74LVC1G17Z-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; SOT553; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; SOT553; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B140-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 5812 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
432+ | 0.17 EUR |
592+ | 0.12 EUR |
684+ | 0.1 EUR |
1454+ | 0.049 EUR |
1539+ | 0.046 EUR |