Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79421) > Seite 1274 nach 1324
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FMMT620TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23 Quantity in set/package: 3000pcs. Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Case: SOT23 Collector current: 1.5A Power dissipation: 0.625W Current gain: 10...900 Collector-emitter voltage: 80V Frequency: 160MHz Polarisation: bipolar |
auf Bestellung 1354 Stücke: Lieferzeit 14-21 Tag (e) |
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FMMT634TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23 Quantity in set/package: 3000pcs. Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Case: SOT23 Collector current: 0.9A Power dissipation: 0.625W Current gain: 0.6k...60k Collector-emitter voltage: 100V Frequency: 140MHz Polarisation: bipolar Kind of transistor: Darlington |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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FMMT722TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23 Quantity in set/package: 3000pcs. Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23 Collector current: 1.5A Power dissipation: 0.625W Current gain: 300...470 Collector-emitter voltage: 70V Frequency: 200MHz Polarisation: bipolar |
auf Bestellung 2996 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16LP-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DFN2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry |
auf Bestellung 5550 Stücke: Lieferzeit 14-21 Tag (e) |
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AL5801W6-7 | DIODES INCORPORATED |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Integrated circuit features: PWM Mounting: SMD Operating temperature: -40...125°C Output current: 0.35A Operating voltage: 5...100V DC Number of channels: 1 |
auf Bestellung 773 Stücke: Lieferzeit 14-21 Tag (e) |
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BC846BW-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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BC846BW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
auf Bestellung 3528 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2903QS-13 | DIODES INCORPORATED |
![]() Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA Kind of comparator: universal Case: SO8 Kind of output: open collector Type of integrated circuit: comparator Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 200nA Input offset voltage: 15mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 |
auf Bestellung 2302 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV199WQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.16A Reverse recovery time: 3µs Semiconductor structure: double series Capacitance: 2pF Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54AW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
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BAS21Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape Application: automotive industry Max. load current: 0.4A |
auf Bestellung 3098 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT6009LCT | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3 Case: TO220-3 Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 14.5mΩ Power dissipation: 2.2W Drain current: 29.8A Gate-source voltage: ±16V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT6009LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 90A Power dissipation: 2.08W Case: PowerDI3333-8 Gate-source voltage: ±16V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT6009LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10.6A Pulsed drain current: 90A Power dissipation: 2.6W Case: TO252 Gate-source voltage: ±16V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT6009LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12mΩ Power dissipation: 2.3W Drain current: 9.1A Gate-source voltage: ±16V Pulsed drain current: 160A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMT6009LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12mΩ Power dissipation: 1.6W Drain current: 11.5A Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DMT6010LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 25A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT6010LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT6010LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 12mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 125A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DMT6011LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 22.2nC On-state resistance: 14.5mΩ Power dissipation: 2.1W Drain current: 8.5A Gate-source voltage: ±20V Pulsed drain current: 85A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMT6012LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 22.2nC On-state resistance: 14mΩ Power dissipation: 1.84W Drain current: 8.4A Gate-source voltage: ±20V Pulsed drain current: 65A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DMT6015LFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 18.9nC On-state resistance: 22mΩ Power dissipation: 2.2W Drain current: 7.6A Gate-source voltage: ±16V Pulsed drain current: 60A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BC847CQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC847CT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
auf Bestellung 533 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847CW-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC847CW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
auf Bestellung 2058 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54STQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOT523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAT54SW-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
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BAT54SW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54SWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Application: automotive industry |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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B240-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
auf Bestellung 19058 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6004SK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252 Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.9W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) |
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PAM8620TR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC Operating temperature: -40...125°C Mounting: SMD Number of channels: 2 Output power: 15W Voltage supply range: 8...26V DC Amplifier class: D Integrated circuit features: low distortion THD; low noise; stereo Case: QFN32 Type of integrated circuit: audio amplifier Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAV99Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV99T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.155A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT523 Kind of package: reel; tape Features of semiconductor devices: small signal |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3098LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8 Kind of channel: enhancement Mounting: SMD Case: SO8 Type of transistor: P-MOSFET x2 Drain-source voltage: -30V Pulsed drain current: -15A Drain current: -3.3A On-state resistance: 65mΩ Power dissipation: 1.8W Gate-source voltage: ±20V Polarisation: unipolar Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
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MBRD20100CT-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO252/DPAK Max. forward voltage: 0.84V Max. forward impulse current: 150A Kind of package: reel |
Produkt ist nicht verfügbar |
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SMBJ12CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2523 Stücke: Lieferzeit 14-21 Tag (e) |
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HD01-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP Case: MiniDIP Kind of package: reel; tape Electrical mounting: SMT Load current: 0.8A Max. forward impulse current: 30A Max. off-state voltage: 100V Type of bridge rectifier: single-phase |
auf Bestellung 2886 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54AWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
Produkt ist nicht verfügbar |
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ZTL431AQFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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LMV358M8G-13 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1MHz Open-loop gain: 10dB Operating voltage: 2.7...5.5V Mounting: SMT Number of channels: 2 Case: MSOP8 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape |
auf Bestellung 2499 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT600TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6402LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: 7 inch reel; tape Power dissipation: 1.1W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 5A On-state resistance: 42mΩ Type of transistor: N-MOSFET |
auf Bestellung 2330 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTL432AFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
auf Bestellung 1542 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ58CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
auf Bestellung 2448 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT3020LFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDBQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDFQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 0.4W Drain current: 6.7A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT3020LFDFQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DMT3020LSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Case: SO8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.5W Drain current: 13A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
DMT3020UFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±12V Gate charge: 8.8nC On-state resistance: 30mΩ Power dissipation: 1.3W Drain current: 5.2A Drain-source voltage: 30V Pulsed drain current: 35A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DMT30M9LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Case: PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 160.5nC On-state resistance: 1.6mΩ Power dissipation: 2.6W Drain current: 100A Drain-source voltage: 30V Pulsed drain current: 400A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74HCT138S16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Operating temperature: -40...150°C Case: SO16 Number of inputs: 6 Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS; TTL Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Family: HCT Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74HCT138T16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Operating temperature: -40...150°C Case: TSSOP16 Number of inputs: 6 Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS; TTL Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Family: HCT Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
FMMT620TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 10...900
Collector-emitter voltage: 80V
Frequency: 160MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 10...900
Collector-emitter voltage: 80V
Frequency: 160MHz
Polarisation: bipolar
auf Bestellung 1354 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
189+ | 0.38 EUR |
215+ | 0.33 EUR |
317+ | 0.23 EUR |
334+ | 0.21 EUR |
FMMT634TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 0.9A
Power dissipation: 0.625W
Current gain: 0.6k...60k
Collector-emitter voltage: 100V
Frequency: 140MHz
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 0.9A
Power dissipation: 0.625W
Current gain: 0.6k...60k
Collector-emitter voltage: 100V
Frequency: 140MHz
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.17 EUR |
FMMT722TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 300...470
Collector-emitter voltage: 70V
Frequency: 200MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 300...470
Collector-emitter voltage: 70V
Frequency: 200MHz
Polarisation: bipolar
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
191+ | 0.37 EUR |
283+ | 0.25 EUR |
298+ | 0.24 EUR |
500+ | 0.23 EUR |
BAS16LP-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
110+ | 0.64 EUR |
BAS16Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
auf Bestellung 5550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1600+ | 0.045 EUR |
2150+ | 0.033 EUR |
2275+ | 0.031 EUR |
2775+ | 0.026 EUR |
2950+ | 0.024 EUR |
AL5801W6-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.35A
Operating voltage: 5...100V DC
Number of channels: 1
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.35A
Operating voltage: 5...100V DC
Number of channels: 1
auf Bestellung 773 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
168+ | 0.43 EUR |
188+ | 0.38 EUR |
236+ | 0.3 EUR |
250+ | 0.29 EUR |
BC846BW-13-F |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC846BW-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 3528 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
643+ | 0.11 EUR |
736+ | 0.097 EUR |
1058+ | 0.068 EUR |
1624+ | 0.044 EUR |
3087+ | 0.023 EUR |
3268+ | 0.022 EUR |
LM2903QS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
223+ | 0.32 EUR |
278+ | 0.26 EUR |
385+ | 0.19 EUR |
496+ | 0.14 EUR |
538+ | 0.13 EUR |
BAV199WQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
511+ | 0.14 EUR |
749+ | 0.096 EUR |
852+ | 0.084 EUR |
1656+ | 0.043 EUR |
1749+ | 0.041 EUR |
BAT54AW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS21Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
auf Bestellung 3098 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1425+ | 0.051 EUR |
1950+ | 0.037 EUR |
2200+ | 0.033 EUR |
2400+ | 0.03 EUR |
2525+ | 0.028 EUR |
DMT6009LCT |
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Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT6009LFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 2.08W
Case: PowerDI3333-8
Gate-source voltage: ±16V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 2.08W
Case: PowerDI3333-8
Gate-source voltage: ±16V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT6009LK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10.6A
Pulsed drain current: 90A
Power dissipation: 2.6W
Case: TO252
Gate-source voltage: ±16V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10.6A
Pulsed drain current: 90A
Power dissipation: 2.6W
Case: TO252
Gate-source voltage: ±16V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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DMT6009LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
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Im Einkaufswagen
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DMT6009LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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DMT6010LFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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DMT6010LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT6010LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT6011LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT6012LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT6015LFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847CQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847CT-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
455+ | 0.16 EUR |
521+ | 0.14 EUR |
533+ | 0.13 EUR |
BC847CW-13-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847CW-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
695+ | 0.1 EUR |
820+ | 0.087 EUR |
1309+ | 0.055 EUR |
1719+ | 0.042 EUR |
2058+ | 0.034 EUR |
BAT54STQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT54SW-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT54SW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
603+ | 0.12 EUR |
711+ | 0.1 EUR |
942+ | 0.076 EUR |
1330+ | 0.054 EUR |
2591+ | 0.028 EUR |
2748+ | 0.026 EUR |
BAT54SWQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
481+ | 0.15 EUR |
500+ | 0.14 EUR |
B240-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
283+ | 0.25 EUR |
447+ | 0.16 EUR |
600+ | 0.12 EUR |
BC847BT-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 19058 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
715+ | 0.1 EUR |
1038+ | 0.069 EUR |
1247+ | 0.057 EUR |
2128+ | 0.034 EUR |
2995+ | 0.024 EUR |
3165+ | 0.023 EUR |
DMTH6004SK3Q-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1125 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
50+ | 1.43 EUR |
55+ | 1.3 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
100+ | 1.03 EUR |
PAM8620TR |
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Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Output power: 15W
Voltage supply range: 8...26V DC
Amplifier class: D
Integrated circuit features: low distortion THD; low noise; stereo
Case: QFN32
Type of integrated circuit: audio amplifier
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Output power: 15W
Voltage supply range: 8...26V DC
Amplifier class: D
Integrated circuit features: low distortion THD; low noise; stereo
Case: QFN32
Type of integrated circuit: audio amplifier
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAV99Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BAV99T-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
455+ | 0.16 EUR |
491+ | 0.15 EUR |
679+ | 0.11 EUR |
1916+ | 0.037 EUR |
2025+ | 0.035 EUR |
DMP3098LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -3.3A
On-state resistance: 65mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -3.3A
On-state resistance: 65mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBRD20100CT-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO252/DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO252/DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ12CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2523 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
212+ | 0.34 EUR |
243+ | 0.29 EUR |
397+ | 0.18 EUR |
676+ | 0.11 EUR |
715+ | 0.1 EUR |
HD01-T |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 0.8A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 0.8A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
148+ | 0.48 EUR |
165+ | 0.43 EUR |
277+ | 0.26 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
BAT54AWQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZTL431AQFTA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.59 EUR |
LMV358M8G-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2499 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
162+ | 0.44 EUR |
182+ | 0.39 EUR |
210+ | 0.34 EUR |
382+ | 0.19 EUR |
407+ | 0.18 EUR |
FZT600TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
DMG6402LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
180+ | 0.4 EUR |
212+ | 0.34 EUR |
281+ | 0.25 EUR |
451+ | 0.16 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
ZTL432AFTA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
317+ | 0.23 EUR |
358+ | 0.2 EUR |
421+ | 0.17 EUR |
511+ | 0.14 EUR |
538+ | 0.13 EUR |
SMAJ58CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
278+ | 0.26 EUR |
329+ | 0.22 EUR |
424+ | 0.17 EUR |
863+ | 0.083 EUR |
910+ | 0.079 EUR |
DMT3020LFDB-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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Stück im Wert von UAH
DMT3020LFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDBQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDFQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LFDFQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020LSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT3020UFDB-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMT30M9LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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74HCT138S16-13 |
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Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
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74HCT138T16-13 |
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Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH