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FMMT620TA FMMT620TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF0651C037D820&compId=FMMT620.pdf?ci_sign=2c617d69f79f8aa09ce5c6a1d446f0f0df43a9a1 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 10...900
Collector-emitter voltage: 80V
Frequency: 160MHz
Polarisation: bipolar
auf Bestellung 1354 Stücke:
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76+0.94 EUR
189+0.38 EUR
215+0.33 EUR
317+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 76
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FMMT634TA FMMT634TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF14AB1922F820&compId=FMMT634.pdf?ci_sign=aa3c94e409f11812273fe9d20d00a2e4dd115584 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 0.9A
Power dissipation: 0.625W
Current gain: 0.6k...60k
Collector-emitter voltage: 100V
Frequency: 140MHz
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 61 Stücke:
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61+1.17 EUR
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FMMT722TA FMMT722TA DIODES INCORPORATED FMMT722.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 300...470
Collector-emitter voltage: 70V
Frequency: 200MHz
Polarisation: bipolar
auf Bestellung 2996 Stücke:
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129+0.56 EUR
191+0.37 EUR
283+0.25 EUR
298+0.24 EUR
500+0.23 EUR
Mindestbestellmenge: 129
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BAS16LP-7 BAS16LP-7 DIODES INCORPORATED BAS16LP.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 110 Stücke:
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110+0.64 EUR
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BAS16Q-7-F BAS16Q-7-F DIODES INCORPORATED BAS16_MMBD4148_MMBD914.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
auf Bestellung 5550 Stücke:
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1600+0.045 EUR
2150+0.033 EUR
2275+0.031 EUR
2775+0.026 EUR
2950+0.024 EUR
Mindestbestellmenge: 1600
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AL5801W6-7 AL5801W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEFB04372C15A143&compId=AL5801.pdf?ci_sign=dc9cf076da6c16d6766433467bdf6b49eb24ffab Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.35A
Operating voltage: 5...100V DC
Number of channels: 1
auf Bestellung 773 Stücke:
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117+0.61 EUR
168+0.43 EUR
188+0.38 EUR
236+0.3 EUR
250+0.29 EUR
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BC846BW-13-F BC846BW-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BC846BW-7-F BC846BW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 3528 Stücke:
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643+0.11 EUR
736+0.097 EUR
1058+0.068 EUR
1624+0.044 EUR
3087+0.023 EUR
3268+0.022 EUR
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LM2903QS-13 LM2903QS-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F45220708D1E28&compId=LM290xxQ.pdf?ci_sign=88e6b8aa5aebe2707e3e1fb40dcbc356183c21f0 Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
auf Bestellung 2302 Stücke:
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136+0.53 EUR
223+0.32 EUR
278+0.26 EUR
385+0.19 EUR
496+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 136
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BAV199WQ-7 BAV199WQ-7 DIODES INCORPORATED BAV199WQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 2950 Stücke:
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455+0.16 EUR
511+0.14 EUR
749+0.096 EUR
852+0.084 EUR
1656+0.043 EUR
1749+0.041 EUR
Mindestbestellmenge: 455
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BAT54AW-7-F BAT54AW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAS21Q-13-F BAS21Q-13-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
auf Bestellung 3098 Stücke:
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1425+0.051 EUR
1950+0.037 EUR
2200+0.033 EUR
2400+0.03 EUR
2525+0.028 EUR
Mindestbestellmenge: 1425
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DMT6009LCT DIODES INCORPORATED DMT6009LCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LFG-13 DIODES INCORPORATED DMT6009LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 2.08W
Case: PowerDI3333-8
Gate-source voltage: ±16V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT6009LK3-13 DIODES INCORPORATED DMT6009LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10.6A
Pulsed drain current: 90A
Power dissipation: 2.6W
Case: TO252
Gate-source voltage: ±16V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LPS-13 DIODES INCORPORATED DMT6009LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LSS-13 DMT6009LSS-13 DIODES INCORPORATED DMT6009LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-13 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-7 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LPS-13 DIODES INCORPORATED DMT6010LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6011LSS-13 DMT6011LSS-13 DIODES INCORPORATED DMT6011LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6012LSS-13 DMT6012LSS-13 DIODES INCORPORATED DMT6012LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6015LFV-7 DIODES INCORPORATED DMT6015LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
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BC847CQ-7-F BC847CQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CT-7-F BC847CT-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
455+0.16 EUR
521+0.14 EUR
533+0.13 EUR
Mindestbestellmenge: 385
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BC847CW-13-F BC847CW-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BC847CW-7-F BC847CW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
695+0.1 EUR
820+0.087 EUR
1309+0.055 EUR
1719+0.042 EUR
2058+0.034 EUR
Mindestbestellmenge: 417
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BAT54STQ-7-F BAT54STQ-7-F DIODES INCORPORATED BAT54TQ-STQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Produkt ist nicht verfügbar
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BAT54SW-13-F BAT54SW-13-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAT54SW-7-F
+1
BAT54SW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
603+0.12 EUR
711+0.1 EUR
942+0.076 EUR
1330+0.054 EUR
2591+0.028 EUR
2748+0.026 EUR
Mindestbestellmenge: 500
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BAT54SWQ-7-F BAT54SWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
481+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 417
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B240-13-F B240-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED875B2BD648A18&compId=B220A_B260A.pdf?ci_sign=6f5691aed402e8f101ce43ea1c2ccec074342381 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 600 Stücke:
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600+0.12 EUR
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BC847BT-7-F BC847BT-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 19058 Stücke:
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455+0.16 EUR
715+0.1 EUR
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1247+0.057 EUR
2128+0.034 EUR
2995+0.024 EUR
3165+0.023 EUR
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CAA0E62B1A38BF&compId=DMTH6004SK3Q.pdf?ci_sign=44945004b091d05cf2809c979a26c92b13976565 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1125 Stücke:
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45+1.6 EUR
50+1.43 EUR
55+1.3 EUR
65+1.1 EUR
69+1.04 EUR
100+1.03 EUR
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PAM8620TR DIODES INCORPORATED PAM8620.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Output power: 15W
Voltage supply range: 8...26V DC
Amplifier class: D
Integrated circuit features: low distortion THD; low noise; stereo
Case: QFN32
Type of integrated circuit: audio amplifier
Kind of package: reel; tape
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BAV99Q-13-F BAV99Q-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
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BAV99T-7-F BAV99T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 3000 Stücke:
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385+0.19 EUR
455+0.16 EUR
491+0.15 EUR
679+0.11 EUR
1916+0.037 EUR
2025+0.035 EUR
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DMP3098LSD-13 DMP3098LSD-13 DIODES INCORPORATED ds31448.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -3.3A
On-state resistance: 65mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: 13 inch reel; tape
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MBRD20100CT-13 DIODES INCORPORATED MBRD20100CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO252/DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
Produkt ist nicht verfügbar
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SMBJ12CA-13-F SMBJ12CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2523 Stücke:
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173+0.41 EUR
212+0.34 EUR
243+0.29 EUR
397+0.18 EUR
676+0.11 EUR
715+0.1 EUR
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HD01-T HD01-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 0.8A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
auf Bestellung 2886 Stücke:
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129+0.56 EUR
148+0.48 EUR
165+0.43 EUR
277+0.26 EUR
439+0.16 EUR
463+0.15 EUR
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BAT54AWQ-7-F BAT54AWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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ZTL431AQFTA ZTL431AQFTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 45 Stücke:
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45+1.59 EUR
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LMV358M8G-13 LMV358M8G-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF3ADA67AEC746&compId=LMV321_358.pdf?ci_sign=8bc5fa44121e5e1b26868b38723c8ee77bb42ffc Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2499 Stücke:
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132+0.54 EUR
162+0.44 EUR
182+0.39 EUR
210+0.34 EUR
382+0.19 EUR
407+0.18 EUR
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FZT600TA FZT600TA DIODES INCORPORATED FZT600A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 38 Stücke:
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38+1.89 EUR
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DMG6402LVT-7 DMG6402LVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C7F77FBE5CD8BF&compId=DMG6402LVT.pdf?ci_sign=84d9abf52e5fbfce0da2efa148b9958860131e35 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
180+0.4 EUR
212+0.34 EUR
281+0.25 EUR
451+0.16 EUR
715+0.1 EUR
758+0.094 EUR
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ZTL432AFTA ZTL432AFTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
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209+0.34 EUR
317+0.23 EUR
358+0.2 EUR
421+0.17 EUR
511+0.14 EUR
538+0.13 EUR
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SMAJ58CA-13-F SMAJ58CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
278+0.26 EUR
329+0.22 EUR
424+0.17 EUR
863+0.083 EUR
910+0.079 EUR
Mindestbestellmenge: 193
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DMT3020LFDB-13 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020LFDB-7 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDBQ-13 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-13 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-7 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-13 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-7 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LSDQ-13 DMT3020LSDQ-13 DIODES INCORPORATED DMT3020LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020UFDB-13 DIODES INCORPORATED DMT3020UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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DMT30M9LPS-13 DIODES INCORPORATED DMT30M9LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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74HCT138S16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F7C0D3&compId=74HCT138.pdf?ci_sign=5049214ed0155bd6174afa4cdfbf87e78716a93a Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
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74HCT138T16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F8C0D3&compId=74HCT138.pdf?ci_sign=50ca252984f838069f1cdd7bc362472180881949 Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
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FMMT620TA pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF0651C037D820&compId=FMMT620.pdf?ci_sign=2c617d69f79f8aa09ce5c6a1d446f0f0df43a9a1
FMMT620TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 10...900
Collector-emitter voltage: 80V
Frequency: 160MHz
Polarisation: bipolar
auf Bestellung 1354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
189+0.38 EUR
215+0.33 EUR
317+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 76
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FMMT634TA pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF14AB1922F820&compId=FMMT634.pdf?ci_sign=aa3c94e409f11812273fe9d20d00a2e4dd115584
FMMT634TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 0.9A
Power dissipation: 0.625W
Current gain: 0.6k...60k
Collector-emitter voltage: 100V
Frequency: 140MHz
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
Mindestbestellmenge: 61
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FMMT722TA FMMT722.pdf
FMMT722TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 1.5A
Power dissipation: 0.625W
Current gain: 300...470
Collector-emitter voltage: 70V
Frequency: 200MHz
Polarisation: bipolar
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
191+0.37 EUR
283+0.25 EUR
298+0.24 EUR
500+0.23 EUR
Mindestbestellmenge: 129
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BAS16LP-7 BAS16LP.pdf
BAS16LP-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
110+0.64 EUR
Mindestbestellmenge: 110
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BAS16Q-7-F BAS16_MMBD4148_MMBD914.pdf
BAS16Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
auf Bestellung 5550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1600+0.045 EUR
2150+0.033 EUR
2275+0.031 EUR
2775+0.026 EUR
2950+0.024 EUR
Mindestbestellmenge: 1600
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AL5801W6-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEFB04372C15A143&compId=AL5801.pdf?ci_sign=dc9cf076da6c16d6766433467bdf6b49eb24ffab
AL5801W6-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.35A
Operating voltage: 5...100V DC
Number of channels: 1
auf Bestellung 773 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
168+0.43 EUR
188+0.38 EUR
236+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 117
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BC846BW-13-F
BC846BW-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC846BW-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7
BC846BW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 3528 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
643+0.11 EUR
736+0.097 EUR
1058+0.068 EUR
1624+0.044 EUR
3087+0.023 EUR
3268+0.022 EUR
Mindestbestellmenge: 643
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LM2903QS-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F45220708D1E28&compId=LM290xxQ.pdf?ci_sign=88e6b8aa5aebe2707e3e1fb40dcbc356183c21f0
LM2903QS-13
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
223+0.32 EUR
278+0.26 EUR
385+0.19 EUR
496+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 136
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BAV199WQ-7 BAV199WQ.pdf
BAV199WQ-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
511+0.14 EUR
749+0.096 EUR
852+0.084 EUR
1656+0.043 EUR
1749+0.041 EUR
Mindestbestellmenge: 455
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BAT54AW-7-F BAT54W_AW_CW_SW.pdf
BAT54AW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAS21Q-13-F Ds12004.pdf
BAS21Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
auf Bestellung 3098 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1425+0.051 EUR
1950+0.037 EUR
2200+0.033 EUR
2400+0.03 EUR
2525+0.028 EUR
Mindestbestellmenge: 1425
Im Einkaufswagen  Stück im Wert von  UAH
DMT6009LCT DMT6009LCT.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LFG-13 DMT6009LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 2.08W
Case: PowerDI3333-8
Gate-source voltage: ±16V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LK3-13 DMT6009LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10.6A
Pulsed drain current: 90A
Power dissipation: 2.6W
Case: TO252
Gate-source voltage: ±16V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LPS-13 DMT6009LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-13 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LFG-7 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010LPS-13 DMT6010LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6011LSS-13 DMT6011LSS.pdf
DMT6011LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6012LSS-13 DMT6012LSS.pdf
DMT6012LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6015LFV-7 DMT6015LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.9nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC847CQ-7-F ds11108.pdf
BC847CQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CT-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d
BC847CT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
455+0.16 EUR
521+0.14 EUR
533+0.13 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BC847CW-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7
BC847CW-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847CW-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7
BC847CW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
695+0.1 EUR
820+0.087 EUR
1309+0.055 EUR
1719+0.042 EUR
2058+0.034 EUR
Mindestbestellmenge: 417
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BAT54STQ-7-F BAT54TQ-STQ.pdf
BAT54STQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Produkt ist nicht verfügbar
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BAT54SW-13-F BAT54W_AW_CW_SW.pdf
BAT54SW-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAT54SW-7-F BAT54W_AW_CW_SW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
603+0.12 EUR
711+0.1 EUR
942+0.076 EUR
1330+0.054 EUR
2591+0.028 EUR
2748+0.026 EUR
Mindestbestellmenge: 500
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BAT54SWQ-7-F SWQ.pdf
BAT54SWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
481+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
B240-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED875B2BD648A18&compId=B220A_B260A.pdf?ci_sign=6f5691aed402e8f101ce43ea1c2ccec074342381
B240-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
283+0.25 EUR
447+0.16 EUR
600+0.12 EUR
Mindestbestellmenge: 179
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BC847BT-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d
BC847BT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 19058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
1038+0.069 EUR
1247+0.057 EUR
2128+0.034 EUR
2995+0.024 EUR
3165+0.023 EUR
Mindestbestellmenge: 455
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DMTH6004SK3Q-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986CAA0E62B1A38BF&compId=DMTH6004SK3Q.pdf?ci_sign=44945004b091d05cf2809c979a26c92b13976565
DMTH6004SK3Q-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
50+1.43 EUR
55+1.3 EUR
65+1.1 EUR
69+1.04 EUR
100+1.03 EUR
Mindestbestellmenge: 45
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PAM8620TR PAM8620.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Output power: 15W
Voltage supply range: 8...26V DC
Amplifier class: D
Integrated circuit features: low distortion THD; low noise; stereo
Case: QFN32
Type of integrated circuit: audio amplifier
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAV99Q-13-F BAV99.pdf
BAV99Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
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BAV99T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV99T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
455+0.16 EUR
491+0.15 EUR
679+0.11 EUR
1916+0.037 EUR
2025+0.035 EUR
Mindestbestellmenge: 385
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DMP3098LSD-13 ds31448.pdf
DMP3098LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -3.3A
On-state resistance: 65mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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MBRD20100CT-13 MBRD20100CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO252/DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
Produkt ist nicht verfügbar
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SMBJ12CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ12CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2523 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
212+0.34 EUR
243+0.29 EUR
397+0.18 EUR
676+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 173
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HD01-T HD01.pdf
HD01-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 0.8A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
148+0.48 EUR
165+0.43 EUR
277+0.26 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 129
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BAT54AWQ-7-F SWQ.pdf
BAT54AWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZTL431AQFTA pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded
ZTL431AQFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.59 EUR
Mindestbestellmenge: 45
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LMV358M8G-13 pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF3ADA67AEC746&compId=LMV321_358.pdf?ci_sign=8bc5fa44121e5e1b26868b38723c8ee77bb42ffc
LMV358M8G-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2499 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
162+0.44 EUR
182+0.39 EUR
210+0.34 EUR
382+0.19 EUR
407+0.18 EUR
Mindestbestellmenge: 132
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FZT600TA FZT600A.pdf
FZT600TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
Mindestbestellmenge: 38
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DMG6402LVT-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C7F77FBE5CD8BF&compId=DMG6402LVT.pdf?ci_sign=84d9abf52e5fbfce0da2efa148b9958860131e35
DMG6402LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
180+0.4 EUR
212+0.34 EUR
281+0.25 EUR
451+0.16 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 152
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ZTL432AFTA pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded
ZTL432AFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
317+0.23 EUR
358+0.2 EUR
421+0.17 EUR
511+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 209
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SMAJ58CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ58CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
278+0.26 EUR
329+0.22 EUR
424+0.17 EUR
863+0.083 EUR
910+0.079 EUR
Mindestbestellmenge: 193
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DMT3020LFDB-13 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDB-7 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDBQ-13 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-13 DMT3020LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-7 DMT3020LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-13 DMT3020LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-7 DMT3020LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LSDQ-13 DMT3020LSDQ.pdf
DMT3020LSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020UFDB-13 DMT3020UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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DMT30M9LPS-13 DMT30M9LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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74HCT138S16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F7C0D3&compId=74HCT138.pdf?ci_sign=5049214ed0155bd6174afa4cdfbf87e78716a93a
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
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74HCT138T16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F8C0D3&compId=74HCT138.pdf?ci_sign=50ca252984f838069f1cdd7bc362472180881949
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
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