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SMBJ75A-13-F SMBJ75A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2980 Stücke:
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193+0.37 EUR
274+0.26 EUR
343+0.21 EUR
500+0.14 EUR
676+0.11 EUR
715+0.1 EUR
736+0.097 EUR
1000+0.096 EUR
Mindestbestellmenge: 193
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SMBJ7.5A-13-F SMBJ7.5A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 7.5V
Max. forward impulse current: 46.5A
Breakdown voltage: 8.33...9.58V
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
auf Bestellung 3000 Stücke:
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179+0.4 EUR
228+0.31 EUR
290+0.25 EUR
443+0.16 EUR
625+0.11 EUR
1000+0.1 EUR
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SMBJ7.5CA-13-F SMBJ7.5CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2140 Stücke:
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173+0.41 EUR
221+0.32 EUR
334+0.21 EUR
506+0.14 EUR
532+0.13 EUR
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S5MC-13-F S5MC-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B983543627B4C143&compId=S5AC_ser.pdf?ci_sign=78a844e5c7496fd8adffaaf94ae8d3c0f76d60d5 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
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112+0.64 EUR
169+0.42 EUR
275+0.26 EUR
291+0.25 EUR
1000+0.24 EUR
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AP61302Z6-7 DIODES INCORPORATED AP61300_AP61302.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Frequency: 2.2MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
157+0.46 EUR
293+0.24 EUR
309+0.23 EUR
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AP61300Z6-7 DIODES INCORPORATED AP61300_AP61302.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
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AP61300QZ6-7 DIODES INCORPORATED AP61300Q_AP61302Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
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MJD31C-13 DIODES INCORPORATED ds31625.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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MJD31CQ-13 DIODES INCORPORATED MJD31CQ_Rev3-3_Nov2016.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
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MJD31CUQ-13 DIODES INCORPORATED MJD31CUQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
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AP61200Z6-7 AP61200Z6-7 DIODES INCORPORATED AP61200_AP61201_AP61202_AP61203.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.3...5.5V DC
Output voltage: 0.6...3.6V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PFM switching mode
Efficiency: 89%
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
138+0.52 EUR
169+0.42 EUR
325+0.22 EUR
343+0.21 EUR
3000+0.2 EUR
Mindestbestellmenge: 84
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DMP34M4SPS-13 DIODES INCORPORATED DMP34M4SPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
Produkt ist nicht verfügbar
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DMN3023L-7 DMN3023L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C94DB7D02698BF&compId=DMN3023L.pdf?ci_sign=4cecbfc42c6179a99a781b626d4b95877d0c15ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
auf Bestellung 4278 Stücke:
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136+0.53 EUR
235+0.3 EUR
323+0.22 EUR
371+0.19 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 136
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ZLLS1000TA ZLLS1000TA DIODES INCORPORATED ZLLS1000.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
auf Bestellung 2821 Stücke:
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88+0.82 EUR
126+0.57 EUR
164+0.44 EUR
302+0.24 EUR
319+0.22 EUR
Mindestbestellmenge: 88
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BAS16T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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BAS16TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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BAS16TWQ-13R-F BAS16TWQ-13R-F DIODES INCORPORATED BAS16TWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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FZT968TA DIODES INCORPORATED FZT968.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
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AP2115M-3.3TRG1 AP2115M-3.3TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2113KTR-G1 AP2113KTR-G1 DIODES INCORPORATED AP2113.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Application: fans; motors
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±3%
Output voltage: 1.6...5.3V
Output current: 0.6A
Produkt ist nicht verfügbar
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AP2115R5-1.2TRG1 AP2115R5-1.2TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2115R5-2.5TRG1 AP2115R5-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2115R5A-2.5TRG1 AP2115R5A-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111MPG-13 DIODES INCORPORATED AP2101_2111.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Produkt ist nicht verfügbar
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DMP213DUFA-7B DIODES INCORPORATED DMP213DUFA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Produkt ist nicht verfügbar
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D5V0P1B2LP-7B D5V0P1B2LP-7B DIODES INCORPORATED D5V0P1B2LP.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
auf Bestellung 8935 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
327+0.22 EUR
429+0.17 EUR
710+0.1 EUR
1793+0.04 EUR
1894+0.038 EUR
Mindestbestellmenge: 239
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DMP2022LSS-13 DMP2022LSS-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89D48BCEAF3FE27&compId=DMP2022LSS-DTE.pdf?ci_sign=828f8cb9ddb0e2a63369f379de5cb43a06cda914 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: 13 inch reel; tape
auf Bestellung 2435 Stücke:
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70+1.03 EUR
106+0.68 EUR
202+0.35 EUR
214+0.33 EUR
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D24V0S1U2TQ-7 D24V0S1U2TQ-7 DIODES INCORPORATED D24V0S1U2TQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
348+0.21 EUR
658+0.11 EUR
749+0.096 EUR
957+0.075 EUR
1013+0.071 EUR
Mindestbestellmenge: 157
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D5V0F1U2S9-7 D5V0F1U2S9-7 DIODES INCORPORATED D5V0F1U2S9.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
auf Bestellung 9973 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
212+0.34 EUR
506+0.14 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 117
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DMP32D9UFZ-7B DIODES INCORPORATED DMP32D9UFZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100mA
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ20A-13-F SMBJ20A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 388 Stücke:
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179+0.4 EUR
246+0.29 EUR
332+0.22 EUR
388+0.19 EUR
Mindestbestellmenge: 179
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SMBJ20AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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BC857BFA-7B DIODES INCORPORATED BC857BFA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
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74LVC1G00W5-7 74LVC1G00W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9CA0D3&compId=74LVC1G00.pdf?ci_sign=28b1816bdbcacac5ade0f1871e28b56dfc2ef59b Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F861C0D3&compId=74LVC1G00.pdf?ci_sign=2f4c57e4b3bd1ba3cd783fc5f3f9dc79487a9adf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F862C0D3&compId=74LVC1G00.pdf?ci_sign=c8b2ab1224b299feb4e567f2022566859f5a29c7 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9BA0D3&compId=74LVC1G00.pdf?ci_sign=6d393f324f1157640058f9214df18d5651ce1511 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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DMP2004K-7 DMP2004K-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3CA5FD6FE748&compId=DMP2004K.pdf?ci_sign=0f2e2648481c019baa8fd6e1a50e7a79e6d3eaa4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3260 Stücke:
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DMN2040LTS-13 DMN2040LTS-13 DIODES INCORPORATED ds31941.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.89W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 5.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
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BAS16WQ-7-F DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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SMAJ200CA-13-F SMAJ200CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ22A-13-F SMBJ22A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMG3404L-7 DMG3404L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C792BBE452F8BF&compId=DMG3404L.pdf?ci_sign=43c53fa63d912c6c8705a561a042cce84bd89e51 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 412 Stücke:
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DMG3406L-13 DMG3406L-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C79BBF7A2078BF&compId=DMG3406L.pdf?ci_sign=32d58b8a920b330699f73edcb454730fa26ea4a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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DMG3402LQ-7 DMG3402LQ-7 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
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DMG3401LSN-7 DIODES INCORPORATED DMG3401LSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
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DMG3401LSNQ-7 DIODES INCORPORATED DMG3401LSNQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
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DMG3407SSN-7 DIODES INCORPORATED DMG3407SSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
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DMG3402LQ-13 DMG3402LQ-13 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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DMG3404L-13 DMG3404L-13 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 13.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
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MMBTA56-7-F MMBTA56-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Kind of package: reel; tape
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.31W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 80V
auf Bestellung 2041 Stücke:
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417+0.17 EUR
658+0.11 EUR
995+0.072 EUR
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MMBTA56Q-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Kind of package: reel; tape
Collector current: 0.5A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.31W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 80V
Produkt ist nicht verfügbar
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SMCJ28A-13-F SMCJ28A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FZT953QTA FZT953QTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8DB7BF3F8520CE&compId=FZT953.pdf?ci_sign=8f57b6558ce292302c3ba3435fdd65b77bc82c45 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Pulsed collector current: 10A
auf Bestellung 463 Stücke:
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125+0.58 EUR
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FZT953TA FZT953TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8DB7BF3F8520CE&compId=FZT953.pdf?ci_sign=8f57b6558ce292302c3ba3435fdd65b77bc82c45 description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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DMP2035U-7 DMP2035U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED89A9967C2CA18&compId=DMP2035U.pdf?ci_sign=cabb7bd9788d193bfd681e481be2f6257b4bb2ad Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.81W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 772 Stücke:
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459+0.16 EUR
772+0.093 EUR
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DMP2035UVT-7 DMP2035UVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3ED50524A748&compId=DMP2035UVT.pdf?ci_sign=9f296fb25f5c4370bc860ca04444f942409f1a72 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Case: TSOT26
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
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B0540W-7-F B0540W-7-F DIODES INCORPORATED B0540W.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
auf Bestellung 3358 Stücke:
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500+0.14 EUR
650+0.11 EUR
823+0.087 EUR
925+0.077 EUR
1263+0.057 EUR
2243+0.032 EUR
2381+0.03 EUR
Mindestbestellmenge: 500
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DESD5V0S1BLD-7B DIODES INCORPORATED DESD5V0S1BLD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Produkt ist nicht verfügbar
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AP3125BKTR-G1 AP3125BKTR-G1 DIODES INCORPORATED AP3125B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Operating temperature: -20...125°C
Case: SOT26
Supply voltage: 10...25V
Frequency: 20...70kHz
Output current: 0.35A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: SMD
Produkt ist nicht verfügbar
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SMBJ75A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ75A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2980 Stücke:
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Anzahl Preis
193+0.37 EUR
274+0.26 EUR
343+0.21 EUR
500+0.14 EUR
676+0.11 EUR
715+0.1 EUR
736+0.097 EUR
1000+0.096 EUR
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SMBJ7.5A-13-F SMBJ_ser.pdf
SMBJ7.5A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 7.5V
Max. forward impulse current: 46.5A
Breakdown voltage: 8.33...9.58V
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
228+0.31 EUR
290+0.25 EUR
443+0.16 EUR
625+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 179
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SMBJ7.5CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ7.5CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
221+0.32 EUR
334+0.21 EUR
506+0.14 EUR
532+0.13 EUR
Mindestbestellmenge: 173
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S5MC-13-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B983543627B4C143&compId=S5AC_ser.pdf?ci_sign=78a844e5c7496fd8adffaaf94ae8d3c0f76d60d5
S5MC-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
auf Bestellung 2878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
169+0.42 EUR
275+0.26 EUR
291+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
AP61302Z6-7 AP61300_AP61302.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Frequency: 2.2MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
157+0.46 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 129
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AP61300Z6-7 AP61300_AP61302.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
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AP61300QZ6-7 AP61300Q_AP61302Q.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
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MJD31C-13 ds31625.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
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MJD31CQ-13 MJD31CQ_Rev3-3_Nov2016.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
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MJD31CUQ-13 MJD31CUQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
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AP61200Z6-7 AP61200_AP61201_AP61202_AP61203.pdf
AP61200Z6-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.3...5.5V DC
Output voltage: 0.6...3.6V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PFM switching mode
Efficiency: 89%
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
138+0.52 EUR
169+0.42 EUR
325+0.22 EUR
343+0.21 EUR
3000+0.2 EUR
Mindestbestellmenge: 84
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DMP34M4SPS-13 DMP34M4SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
Produkt ist nicht verfügbar
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DMN3023L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C94DB7D02698BF&compId=DMN3023L.pdf?ci_sign=4cecbfc42c6179a99a781b626d4b95877d0c15ab
DMN3023L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
auf Bestellung 4278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
235+0.3 EUR
323+0.22 EUR
371+0.19 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
ZLLS1000TA ZLLS1000.pdf
ZLLS1000TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
auf Bestellung 2821 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
126+0.57 EUR
164+0.44 EUR
302+0.24 EUR
319+0.22 EUR
Mindestbestellmenge: 88
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BAS16T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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BAS16TW-7-F ds30154.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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BAS16TWQ-13R-F BAS16TWQ.pdf
BAS16TWQ-13R-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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FZT968TA FZT968.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
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AP2115M-3.3TRG1 AP2115.pdf
AP2115M-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2113KTR-G1 AP2113.pdf
AP2113KTR-G1
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Application: fans; motors
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±3%
Output voltage: 1.6...5.3V
Output current: 0.6A
Produkt ist nicht verfügbar
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AP2115R5-1.2TRG1 AP2115.pdf
AP2115R5-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2115R5-2.5TRG1 AP2115.pdf
AP2115R5-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2115R5A-2.5TRG1 AP2115.pdf
AP2115R5A-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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AP2111MPG-13 AP2101_2111.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Produkt ist nicht verfügbar
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DMP213DUFA-7B DMP213DUFA.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Produkt ist nicht verfügbar
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D5V0P1B2LP-7B D5V0P1B2LP.pdf
D5V0P1B2LP-7B
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
auf Bestellung 8935 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
327+0.22 EUR
429+0.17 EUR
710+0.1 EUR
1793+0.04 EUR
1894+0.038 EUR
Mindestbestellmenge: 239
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DMP2022LSS-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89D48BCEAF3FE27&compId=DMP2022LSS-DTE.pdf?ci_sign=828f8cb9ddb0e2a63369f379de5cb43a06cda914
DMP2022LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: 13 inch reel; tape
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
106+0.68 EUR
202+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
D24V0S1U2TQ-7 D24V0S1U2TQ.pdf
D24V0S1U2TQ-7
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
348+0.21 EUR
658+0.11 EUR
749+0.096 EUR
957+0.075 EUR
1013+0.071 EUR
Mindestbestellmenge: 157
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D5V0F1U2S9-7 D5V0F1U2S9.pdf
D5V0F1U2S9-7
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
auf Bestellung 9973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
212+0.34 EUR
506+0.14 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
DMP32D9UFZ-7B DMP32D9UFZ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100mA
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ20A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ20A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
246+0.29 EUR
332+0.22 EUR
388+0.19 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ20AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BC857BFA-7B BC857BFA.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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74LVC1G00W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9CA0D3&compId=74LVC1G00.pdf?ci_sign=28b1816bdbcacac5ade0f1871e28b56dfc2ef59b
74LVC1G00W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F861C0D3&compId=74LVC1G00.pdf?ci_sign=2f4c57e4b3bd1ba3cd783fc5f3f9dc79487a9adf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F862C0D3&compId=74LVC1G00.pdf?ci_sign=c8b2ab1224b299feb4e567f2022566859f5a29c7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9BA0D3&compId=74LVC1G00.pdf?ci_sign=6d393f324f1157640058f9214df18d5651ce1511
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2004K-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3CA5FD6FE748&compId=DMP2004K.pdf?ci_sign=0f2e2648481c019baa8fd6e1a50e7a79e6d3eaa4
DMP2004K-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
417+0.17 EUR
579+0.12 EUR
673+0.11 EUR
1214+0.059 EUR
1283+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 209
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DMN2040LTS-13 ds31941.pdf
DMN2040LTS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.89W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 5.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
auf Bestellung 2011 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
136+0.53 EUR
323+0.22 EUR
343+0.21 EUR
Mindestbestellmenge: 84
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BAS16WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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SMAJ200CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ200CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ22A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ22A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG3404L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C792BBE452F8BF&compId=DMG3404L.pdf?ci_sign=43c53fa63d912c6c8705a561a042cce84bd89e51
DMG3404L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
213+0.34 EUR
269+0.27 EUR
385+0.19 EUR
412+0.17 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
DMG3406L-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C79BBF7A2078BF&compId=DMG3406L.pdf?ci_sign=32d58b8a920b330699f73edcb454730fa26ea4a0
DMG3406L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMG3402LQ-7 DMG3402LQ.pdf
DMG3402LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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DMG3401LSN-7 DMG3401LSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
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DMG3401LSNQ-7 DMG3401LSNQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
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DMG3407SSN-7 DMG3407SSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
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DMG3402LQ-13 DMG3402LQ.pdf
DMG3402LQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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DMG3404L-13 DMG3404L.pdf
DMG3404L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 13.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
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MMBTA56-7-F MMBTA55Q_MMBTA56Q.pdf
MMBTA56-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Kind of package: reel; tape
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.31W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 80V
auf Bestellung 2041 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
658+0.11 EUR
995+0.072 EUR
2041+0.034 EUR
Mindestbestellmenge: 417
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MMBTA56Q-7-F MMBTA55Q_MMBTA56Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Kind of package: reel; tape
Collector current: 0.5A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.31W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ28A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ28A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZT953QTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8DB7BF3F8520CE&compId=FZT953.pdf?ci_sign=8f57b6558ce292302c3ba3435fdd65b77bc82c45
FZT953QTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Pulsed collector current: 10A
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
79+0.92 EUR
118+0.61 EUR
125+0.58 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
FZT953TA description pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8DB7BF3F8520CE&compId=FZT953.pdf?ci_sign=8f57b6558ce292302c3ba3435fdd65b77bc82c45
FZT953TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2035U-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED89A9967C2CA18&compId=DMP2035U.pdf?ci_sign=cabb7bd9788d193bfd681e481be2f6257b4bb2ad
DMP2035U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.81W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 772 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
242+0.3 EUR
338+0.21 EUR
459+0.16 EUR
772+0.093 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
DMP2035UVT-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3ED50524A748&compId=DMP2035UVT.pdf?ci_sign=9f296fb25f5c4370bc860ca04444f942409f1a72
DMP2035UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Case: TSOT26
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
auf Bestellung 4159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
101+0.71 EUR
158+0.45 EUR
201+0.36 EUR
271+0.26 EUR
459+0.16 EUR
486+0.15 EUR
Mindestbestellmenge: 101
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B0540W-7-F B0540W.pdf
B0540W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
auf Bestellung 3358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
650+0.11 EUR
823+0.087 EUR
925+0.077 EUR
1263+0.057 EUR
2243+0.032 EUR
2381+0.03 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
DESD5V0S1BLD-7B DESD5V0S1BLD.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Produkt ist nicht verfügbar
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AP3125BKTR-G1 AP3125B.pdf
AP3125BKTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Operating temperature: -20...125°C
Case: SOT26
Supply voltage: 10...25V
Frequency: 20...70kHz
Output current: 0.35A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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