Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79040) > Seite 1284 nach 1318
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SMBJ75A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ7.5A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Max. off-state voltage: 7.5V Max. forward impulse current: 46.5A Breakdown voltage: 8.33...9.58V Leakage current: 0.1mA Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.6kW |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ7.5CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2140 Stücke: Lieferzeit 14-21 Tag (e) |
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S5MC-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A Mounting: SMD Capacitance: 40pF Max. off-state voltage: 1kV Max. forward voltage: 1.15V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: reel; tape Type of diode: rectifying Case: SMC |
auf Bestellung 2878 Stücke: Lieferzeit 14-21 Tag (e) |
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AP61302Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Case: SOT563 Mounting: SMD Kind of package: reel; tape Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of integrated circuit: DC/DC converter Topology: buck Operating temperature: -40...85°C Frequency: 2.2MHz |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AP61300Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Operating temperature: -40...85°C Case: SOT563 Frequency: 2.2MHz Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD |
Produkt ist nicht verfügbar |
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AP61300QZ6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Operating temperature: -40...85°C Case: SOT563 Frequency: 2.2MHz Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Application: automotive industry Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD |
Produkt ist nicht verfügbar |
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MJD31C-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
Produkt ist nicht verfügbar |
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MJD31CQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
Produkt ist nicht verfügbar |
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MJD31CUQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 16W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
Produkt ist nicht verfügbar |
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AP61200Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.3...5.5V DC Output voltage: 0.6...3.6V DC Output current: 2A Case: SOT563 Mounting: SMD Frequency: 1.3MHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Integrated circuit features: PFM switching mode Efficiency: 89% |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP34M4SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: -30V Drain current: -17A On-state resistance: 6mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 127nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -350A |
Produkt ist nicht verfügbar |
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DMN3023L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 0.6W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT23 |
auf Bestellung 4278 Stücke: Lieferzeit 14-21 Tag (e) |
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ZLLS1000TA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 1.16A Semiconductor structure: single diode Capacitance: 28pF Max. forward impulse current: 6.4A Kind of package: reel; tape Power dissipation: 0.8W |
auf Bestellung 2821 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.155A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SOT523 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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BAS16TW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Semiconductor structure: triple independent Features of semiconductor devices: small signal Kind of package: reel; tape Case: SOT363 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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BAS16TWQ-13R-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: triple independent Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 0.5A Case: SOT363 Max. forward voltage: 1.25V Application: automotive industry Capacitance: 2pF Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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FZT968TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 6A Power dissipation: 3W Case: SOT223 Pulsed collector current: 20A Current gain: 50...1000 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 80MHz |
Produkt ist nicht verfügbar |
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AP2115M-3.3TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 3.3V Output current: 1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2113KTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Number of channels: 1 Application: fans; motors Input voltage: 2.5...5.5V Kind of package: reel; tape Kind of voltage regulator: adjustable; LDO; linear Mounting: SMD Operating temperature: -40...85°C Case: SOT25 Tolerance: ±3% Output voltage: 1.6...5.3V Output current: 0.6A |
Produkt ist nicht verfügbar |
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AP2115R5-1.2TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2115R5-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2115R5A-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2111MPG-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: MSOP8EP Supply voltage: 2.7...5.5V DC On-state resistance: 90mΩ Output current: 2A Type of integrated circuit: power switch Number of channels: 1 |
Produkt ist nicht verfügbar |
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DMP213DUFA-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW Mounting: SMD Case: X2-DFN0806-3 Drain-source voltage: -25V Drain current: -125mA On-state resistance: 13Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 0.35nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -0.5A |
Produkt ist nicht verfügbar |
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D5V0P1B2LP-7B | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape |
auf Bestellung 8935 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2022LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 13mΩ Mounting: SMD Kind of channel: enhancement Kind of package: 13 inch reel; tape |
auf Bestellung 2435 Stücke: Lieferzeit 14-21 Tag (e) |
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D24V0S1U2TQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 24V Breakdown voltage: 27V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2402 Stücke: Lieferzeit 14-21 Tag (e) |
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D5V0F1U2S9-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Max. forward impulse current: 1.5A |
auf Bestellung 9973 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP32D9UFZ-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100mA Pulsed drain current: -0.7A Power dissipation: 0.39W Case: X2-DFN0606-3 Gate-source voltage: ±10V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.35nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SMBJ20A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 388 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ20AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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BC857BFA-7B | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 435mW Case: X2-DFN0806-3 Current gain: 200...470 Mounting: SMD Kind of package: reel; tape Frequency: 100...340MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.2A |
Produkt ist nicht verfügbar |
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74LVC1G00W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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74LVC1G00FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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74LVC1G00FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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74LVC1G00SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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DMP2004K-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -600mA Power dissipation: 0.55W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3260 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2040LTS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8 Mounting: SMD Case: TSSOP8 Drain-source voltage: 20V Drain current: 4.9A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 0.89W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 5.2nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 30A |
auf Bestellung 2011 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16WQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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SMAJ200CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 200V Breakdown voltage: 224...248V Max. forward impulse current: 1.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMBJ22A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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DMG3404L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 4.8A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.33W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 412 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3406L-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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DMG3402LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 11.7nC Kind of channel: enhancement Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
DMG3401LSN-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Mounting: SMD Case: SC59 Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 25.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMG3401LSNQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Mounting: SMD Case: SC59 Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 85mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.2W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 25.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DMG3407SSN-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59 Mounting: SMD Case: SC59 Drain-source voltage: -30V Drain current: -3.6A On-state resistance: 72mΩ Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DMG3402LQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 11.7nC Kind of channel: enhancement Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMG3404L-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.33W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 13.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBTA56-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23 Case: SOT23 Mounting: SMD Frequency: 50MHz Kind of package: reel; tape Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.31W Polarisation: bipolar Quantity in set/package: 3000pcs. Collector-emitter voltage: 80V |
auf Bestellung 2041 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA56Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23 Case: SOT23 Mounting: SMD Frequency: 50MHz Kind of package: reel; tape Collector current: 0.5A Type of transistor: PNP Application: automotive industry Power dissipation: 0.31W Polarisation: bipolar Quantity in set/package: 3000pcs. Collector-emitter voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SMCJ28A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FZT953QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 3W Case: SOT223 Current gain: 15...200 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 125MHz Application: automotive industry Pulsed collector current: 10A |
auf Bestellung 463 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT953TA | DIODES INCORPORATED |
![]() ![]() Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 1.6W Case: SOT223 Current gain: 100...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMP2035U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD Case: SOT23 Drain-source voltage: -20V Drain current: -2.9A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 0.81W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD |
auf Bestellung 772 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2035UVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD Case: TSOT26 Drain-source voltage: -20V Drain current: -4.8A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD |
auf Bestellung 4159 Stücke: Lieferzeit 14-21 Tag (e) |
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B0540W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.46V Max. forward impulse current: 5.5A Kind of package: reel; tape Capacitance: 170pF |
auf Bestellung 3358 Stücke: Lieferzeit 14-21 Tag (e) |
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DESD5V0S1BLD-7B | DIODES INCORPORATED |
![]() Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape Case: DFN1006-2 Max. off-state voltage: 5V Semiconductor structure: bidirectional Max. forward impulse current: 12A Breakdown voltage: 5.5V Leakage current: 0.1µA Kind of package: reel; tape Type of diode: TVS Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AP3125BKTR-G1 | DIODES INCORPORATED |
![]() Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback Operating temperature: -20...125°C Case: SOT26 Supply voltage: 10...25V Frequency: 20...70kHz Output current: 0.35A Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Duty cycle factor: 0...80% Kind of integrated circuit: PWM controller Topology: flyback Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
SMBJ75A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
274+ | 0.26 EUR |
343+ | 0.21 EUR |
500+ | 0.14 EUR |
676+ | 0.11 EUR |
715+ | 0.1 EUR |
736+ | 0.097 EUR |
1000+ | 0.096 EUR |
SMBJ7.5A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 7.5V
Max. forward impulse current: 46.5A
Breakdown voltage: 8.33...9.58V
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 7.5V
Max. forward impulse current: 46.5A
Breakdown voltage: 8.33...9.58V
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
228+ | 0.31 EUR |
290+ | 0.25 EUR |
443+ | 0.16 EUR |
625+ | 0.11 EUR |
1000+ | 0.1 EUR |
SMBJ7.5CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
221+ | 0.32 EUR |
334+ | 0.21 EUR |
506+ | 0.14 EUR |
532+ | 0.13 EUR |
S5MC-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
auf Bestellung 2878 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
169+ | 0.42 EUR |
275+ | 0.26 EUR |
291+ | 0.25 EUR |
1000+ | 0.24 EUR |
AP61302Z6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Frequency: 2.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Frequency: 2.2MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
157+ | 0.46 EUR |
293+ | 0.24 EUR |
309+ | 0.23 EUR |
AP61300Z6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP61300QZ6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Operating temperature: -40...85°C
Case: SOT563
Frequency: 2.2MHz
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD31C-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD31CQ-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD31CUQ-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP61200Z6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.3...5.5V DC
Output voltage: 0.6...3.6V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PFM switching mode
Efficiency: 89%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.3...5.5V DC
Output voltage: 0.6...3.6V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: PFM switching mode
Efficiency: 89%
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
138+ | 0.52 EUR |
169+ | 0.42 EUR |
325+ | 0.22 EUR |
343+ | 0.21 EUR |
3000+ | 0.2 EUR |
DMP34M4SPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN3023L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
auf Bestellung 4278 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
235+ | 0.3 EUR |
323+ | 0.22 EUR |
371+ | 0.19 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
ZLLS1000TA |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
auf Bestellung 2821 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
126+ | 0.57 EUR |
164+ | 0.44 EUR |
302+ | 0.24 EUR |
319+ | 0.22 EUR |
BAS16T-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
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BAS16TW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
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BAS16TWQ-13R-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
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FZT968TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
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AP2115M-3.3TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2113KTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Application: fans; motors
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±3%
Output voltage: 1.6...5.3V
Output current: 0.6A
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Application: fans; motors
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±3%
Output voltage: 1.6...5.3V
Output current: 0.6A
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AP2115R5-1.2TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5-2.5TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5A-2.5TRG1 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111MPG-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Produkt ist nicht verfügbar
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DMP213DUFA-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Produkt ist nicht verfügbar
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D5V0P1B2LP-7B |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
auf Bestellung 8935 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
327+ | 0.22 EUR |
429+ | 0.17 EUR |
710+ | 0.1 EUR |
1793+ | 0.04 EUR |
1894+ | 0.038 EUR |
DMP2022LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: 13 inch reel; tape
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
106+ | 0.68 EUR |
202+ | 0.35 EUR |
214+ | 0.33 EUR |
D24V0S1U2TQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
348+ | 0.21 EUR |
658+ | 0.11 EUR |
749+ | 0.096 EUR |
957+ | 0.075 EUR |
1013+ | 0.071 EUR |
D5V0F1U2S9-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
auf Bestellung 9973 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
212+ | 0.34 EUR |
506+ | 0.14 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
DMP32D9UFZ-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100mA
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100mA
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ20A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
246+ | 0.29 EUR |
332+ | 0.22 EUR |
388+ | 0.19 EUR |
SMBJ20AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BC857BFA-7B |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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74LVC1G00W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FW4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
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74LVC1G00FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G00SE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2004K-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3260 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
417+ | 0.17 EUR |
579+ | 0.12 EUR |
673+ | 0.11 EUR |
1214+ | 0.059 EUR |
1283+ | 0.056 EUR |
3000+ | 0.054 EUR |
DMN2040LTS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.89W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 5.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.89W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 5.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
auf Bestellung 2011 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
136+ | 0.53 EUR |
323+ | 0.22 EUR |
343+ | 0.21 EUR |
BAS16WQ-7-F |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ200CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ22A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG3404L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
213+ | 0.34 EUR |
269+ | 0.27 EUR |
385+ | 0.19 EUR |
412+ | 0.17 EUR |
DMG3406L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG3402LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG3401LSN-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG3401LSNQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG3407SSN-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG3402LQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMG3404L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 13.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 13.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBTA56-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Kind of package: reel; tape
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.31W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 80V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Kind of package: reel; tape
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.31W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 80V
auf Bestellung 2041 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
658+ | 0.11 EUR |
995+ | 0.072 EUR |
2041+ | 0.034 EUR |
MMBTA56Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Kind of package: reel; tape
Collector current: 0.5A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.31W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 80V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Kind of package: reel; tape
Collector current: 0.5A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.31W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMCJ28A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FZT953QTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Pulsed collector current: 10A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Pulsed collector current: 10A
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
79+ | 0.92 EUR |
118+ | 0.61 EUR |
125+ | 0.58 EUR |
FZT953TA | ![]() |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2035U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.81W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.81W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 772 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
242+ | 0.3 EUR |
338+ | 0.21 EUR |
459+ | 0.16 EUR |
772+ | 0.093 EUR |
DMP2035UVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Case: TSOT26
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Case: TSOT26
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
auf Bestellung 4159 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
101+ | 0.71 EUR |
158+ | 0.45 EUR |
201+ | 0.36 EUR |
271+ | 0.26 EUR |
459+ | 0.16 EUR |
486+ | 0.15 EUR |
B0540W-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
auf Bestellung 3358 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
650+ | 0.11 EUR |
823+ | 0.087 EUR |
925+ | 0.077 EUR |
1263+ | 0.057 EUR |
2243+ | 0.032 EUR |
2381+ | 0.03 EUR |
DESD5V0S1BLD-7B |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP3125BKTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Operating temperature: -20...125°C
Case: SOT26
Supply voltage: 10...25V
Frequency: 20...70kHz
Output current: 0.35A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: SMD
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Operating temperature: -20...125°C
Case: SOT26
Supply voltage: 10...25V
Frequency: 20...70kHz
Output current: 0.35A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH