Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79036) > Seite 1296 nach 1318
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DFLS1150-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; reel,tape Case: PowerDI®123 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 150V Max. forward voltage: 0.82V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Type of diode: Schottky rectifying |
auf Bestellung 2780 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC2G86HD4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...150°C Case: X2-DFN2010-8 Number of inputs: 2 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: XOR Technology: CMOS Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
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74LVC2G86HK3-7 | DIODES INCORPORATED |
![]() Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...150°C Case: X2-DFN1410-8 Number of inputs: 2 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: XOR Technology: CMOS Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
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ZXMP6A13GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A Pulsed drain current: -7.8A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.595Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 414 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH3002LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W Mounting: SMD Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Drain-source voltage: 30V Drain current: 240A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 77nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
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DMTH3004LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W Mounting: SMD Kind of package: 13 inch reel; tape Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 10A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 250A |
Produkt ist nicht verfügbar |
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FZT489QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 1.2W Case: SOT223 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry Quantity in set/package: 1000pcs. |
auf Bestellung 922 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT589TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 3W Case: SOT223 Pulsed collector current: 2A Current gain: 40...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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FCX589TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 2.3W Case: SOT89 Pulsed collector current: 2A Current gain: 40...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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MMSZ5232BQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37/0.5W; 5.6V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 5.6V Application: automotive industry Power dissipation: 0.37/0.5W Type of diode: Zener Tolerance: ±5% |
Produkt ist nicht verfügbar |
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MMBZ5232B-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode Case: SOT23 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 5.6V Power dissipation: 0.35W Type of diode: Zener Tolerance: ±5% |
Produkt ist nicht verfügbar |
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MMBZ5232BW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323; single diode Case: SOT323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 5.6V Power dissipation: 0.2W Type of diode: Zener Tolerance: ±5% |
Produkt ist nicht verfügbar |
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S1M-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Capacitance: 10pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 12360 Stücke: Lieferzeit 14-21 Tag (e) |
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BC848CQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Application: automotive industry Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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BZX84C4V3-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C4V3Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C4V3S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT363 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
Produkt ist nicht verfügbar |
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BZX84C4V3W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SBR6100CTL-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 3Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SBR® Mounting: SMD Max. off-state voltage: 100V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.74V Max. forward impulse current: 78A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SBR6100CTLQ-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 6A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SBR® Mounting: SMD Max. off-state voltage: 100V Load current: 6A Semiconductor structure: common cathode; double Max. forward voltage: 0.74V Max. forward impulse current: 78A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BAT760Q-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A; reel,tape; 235mW Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Capacitance: 25pF Max. forward voltage: 0.55V Leakage current: 50µA Max. forward impulse current: 5.5A Kind of package: reel; tape Power dissipation: 235mW Application: automotive industry |
Produkt ist nicht verfügbar |
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ZVP3306FTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1529 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTP08400BFFTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.2A Power dissipation: 0.84W Case: SOT23F Current gain: 100...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 70MHz |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3061SWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 22A; 650mW; SOT323 Case: SOT323 Drain-source voltage: 30V Drain current: 2.7A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 0.65W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 3.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 22A Mounting: SMD |
Produkt ist nicht verfügbar |
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DMP10H400SE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2.1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 271 Stücke: Lieferzeit 14-21 Tag (e) |
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PI4ULS5V202XVEX | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2200UDW-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.7A Power dissipation: 0.6W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
74HCT594S16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Family: HCT Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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74HCT594T16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Supply voltage: 4.5...5.5V DC Family: HCT Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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DMG2305UXQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMG2305UX-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMG2305UXQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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BAT54TW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: triple independent Reverse recovery time: 5ns Max. forward impulse current: 0.6A Power dissipation: 0.2W Type of diode: Schottky rectifying Capacitance: 10pF Max. off-state voltage: 30V Max. forward voltage: 0.24V Load current: 0.2A |
auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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74AUP2G34DW-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Case: SOT363 Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 0.8...3.6V DC Kind of output: push-pull Quiescent current: 0.9µA Manufacturer series: AUP |
auf Bestellung 1969 Stücke: Lieferzeit 14-21 Tag (e) |
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74AUP2G17DW-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Case: SOT363 Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 0.8...3.6V DC Kind of output: push-pull Quiescent current: 0.9µA Kind of input: with Schmitt trigger Manufacturer series: AUP |
auf Bestellung 2830 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013TQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW Mounting: SMD Application: automotive industry Power dissipation: 0.27W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 580pC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -6A Drain-source voltage: -20V Drain current: -330mA On-state resistance: 1.3Ω Type of transistor: P-MOSFET Case: SOT523 |
Produkt ist nicht verfügbar |
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DMG1013UWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Mounting: SMD Application: automotive industry Power dissipation: 0.31W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 622.4pC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -3A Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Case: SOT323 |
Produkt ist nicht verfügbar |
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SMCJ64CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 14.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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DMP2078LCA3-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Case: X4-DSN1006-3 Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 1.6nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -13A Mounting: SMD |
Produkt ist nicht verfügbar |
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AP22816BKAWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 95mΩ Output current: 1A Number of channels: 1 Active logical level: low Kind of integrated circuit: high-side; USB switch Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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AP22816BKBWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 95mΩ Output current: 1A Number of channels: 1 Active logical level: low Kind of integrated circuit: high-side; USB switch Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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AP22816BKEWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25 Type of integrated circuit: power switch Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 95mΩ Output current: 1A Number of channels: 1 Active logical level: low Kind of integrated circuit: high-side; USB switch Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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DDTC123JE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. Current gain: 80 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MBRB20150CT-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward voltage: 0.9V Leakage current: 10mA Max. forward impulse current: 170A |
Produkt ist nicht verfügbar |
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MBRB20150CT | DIODES INCORPORATED |
![]() ![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward voltage: 0.9V Leakage current: 10mA Max. forward impulse current: 170A |
Produkt ist nicht verfügbar |
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SDT3060VCT | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V Max. off-state voltage: 60V Max. forward voltage: 0.6V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 200A Leakage current: 50mA Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220AB |
auf Bestellung 224 Stücke: Lieferzeit 14-21 Tag (e) |
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SDT3060VCTFP | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V Max. off-state voltage: 60V Max. forward voltage: 0.6V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 200A Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220FP |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3036SFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Drain-source voltage: -30V Drain current: -7A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 16.5nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTA114YCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DDTA114YE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DDTA114YLP-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: X1-DFN1006-3 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DDTA114YUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP2311FGEG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN3030-8 On-state resistance: 70mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP2152AFGEG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD Type of integrated circuit: power switch Mounting: SMD Number of channels: 2 Case: U-DFN3030-8 Kind of package: reel; tape Output current: 0.5A On-state resistance: 85mΩ Supply voltage: 2.7...5.5V DC Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP2142AFGEG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD Type of integrated circuit: power switch Mounting: SMD Number of channels: 2 Case: U-DFN3030-8 Kind of package: reel; tape Output current: 0.5A On-state resistance: 85mΩ Supply voltage: 2.7...5.5V DC Kind of output: P-Channel Active logical level: low Kind of integrated circuit: high-side; USB switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP2162AFGEG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD Type of integrated circuit: power switch Mounting: SMD Number of channels: 2 Case: U-DFN3030-8 Kind of package: reel; tape Output current: 1A On-state resistance: 85mΩ Supply voltage: 2.7...5.5V DC Kind of output: P-Channel Active logical level: low Kind of integrated circuit: high-side; USB switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP2172AFGEG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD Supply voltage: 2.7...5.5V DC On-state resistance: 85mΩ Output current: 1A Type of integrated circuit: power switch Number of channels: 2 Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: U-DFN3030-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP2182AFGEG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD Type of integrated circuit: power switch Mounting: SMD Number of channels: 2 Case: U-DFN3030-8 Kind of package: reel; tape Output current: 1.5A On-state resistance: 85mΩ Supply voltage: 2.7...5.5V DC Kind of output: P-Channel Active logical level: low Kind of integrated circuit: high-side; USB switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AP2192AFGEG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD Type of integrated circuit: power switch Mounting: SMD Number of channels: 2 Case: U-DFN3030-8 Kind of package: reel; tape Output current: 1.5A On-state resistance: 85mΩ Supply voltage: 2.7...5.5V DC Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DDZ9702T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.15W; 15V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
DFLS1150-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; reel,tape
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 150V
Max. forward voltage: 0.82V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; reel,tape
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 150V
Max. forward voltage: 0.82V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Type of diode: Schottky rectifying
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
175+ | 0.41 EUR |
244+ | 0.29 EUR |
527+ | 0.14 EUR |
556+ | 0.13 EUR |
74LVC2G86HD4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN2010-8
Number of inputs: 2
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: XOR
Technology: CMOS
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN2010-8
Number of inputs: 2
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: XOR
Technology: CMOS
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC2G86HK3-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1410-8
Number of inputs: 2
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: XOR
Technology: CMOS
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1410-8
Number of inputs: 2
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: XOR
Technology: CMOS
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXMP6A13GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Pulsed drain current: -7.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.595Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Pulsed drain current: -7.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.595Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
133+ | 0.54 EUR |
213+ | 0.34 EUR |
225+ | 0.32 EUR |
400+ | 0.31 EUR |
DMTH3002LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W
Mounting: SMD
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Drain-source voltage: 30V
Drain current: 240A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 77nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W
Mounting: SMD
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Drain-source voltage: 30V
Drain current: 240A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 77nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMTH3004LFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 250A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FZT489QTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 1.2W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 1.2W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
auf Bestellung 922 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FZT589TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCX589TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 2.3W
Case: SOT89
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 2.3W
Case: SOT89
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ5232BQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Application: automotive industry
Power dissipation: 0.37/0.5W
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Application: automotive industry
Power dissipation: 0.37/0.5W
Type of diode: Zener
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBZ5232B-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Power dissipation: 0.35W
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Power dissipation: 0.35W
Type of diode: Zener
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBZ5232BW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323; single diode
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Power dissipation: 0.2W
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323; single diode
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.6V
Power dissipation: 0.2W
Type of diode: Zener
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S1M-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 12360 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
603+ | 0.12 EUR |
815+ | 0.088 EUR |
940+ | 0.076 EUR |
1819+ | 0.039 EUR |
1924+ | 0.037 EUR |
BC848CQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C4V3-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
440+ | 0.16 EUR |
BZX84C4V3Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C4V3S-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C4V3W-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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SBR6100CTL-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. forward impulse current: 78A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. forward impulse current: 78A
Kind of package: reel; tape
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SBR6100CTLQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. forward impulse current: 78A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. forward impulse current: 78A
Kind of package: reel; tape
Application: automotive industry
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BAT760Q-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A; reel,tape; 235mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 235mW
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A; reel,tape; 235mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 235mW
Application: automotive industry
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ZVP3306FTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1529 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
167+ | 0.43 EUR |
213+ | 0.34 EUR |
325+ | 0.22 EUR |
343+ | 0.21 EUR |
ZXTP08400BFFTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 70MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 70MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
161+ | 0.44 EUR |
290+ | 0.25 EUR |
305+ | 0.23 EUR |
DMN3061SWQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 22A; 650mW; SOT323
Case: SOT323
Drain-source voltage: 30V
Drain current: 2.7A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.65W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 3.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 22A; 650mW; SOT323
Case: SOT323
Drain-source voltage: 30V
Drain current: 2.7A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.65W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 3.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22A
Mounting: SMD
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DMP10H400SE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
126+ | 0.57 EUR |
157+ | 0.46 EUR |
228+ | 0.31 EUR |
241+ | 0.3 EUR |
PI4ULS5V202XVEX |
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Hersteller: DIODES INCORPORATED
Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.48 EUR |
DMP2200UDW-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.6W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.6W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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74HCT594S16-13 |
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Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
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74HCT594T16-13 |
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Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
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DMG2305UXQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMG2305UX-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG2305UXQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BAT54TW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 30V
Max. forward voltage: 0.24V
Load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Type of diode: Schottky rectifying
Capacitance: 10pF
Max. off-state voltage: 30V
Max. forward voltage: 0.24V
Load current: 0.2A
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
300+ | 0.24 EUR |
496+ | 0.14 EUR |
735+ | 0.097 EUR |
74AUP2G34DW-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Manufacturer series: AUP
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Manufacturer series: AUP
auf Bestellung 1969 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1087+ | 0.066 EUR |
1137+ | 0.063 EUR |
1180+ | 0.061 EUR |
1250+ | 0.057 EUR |
74AUP2G17DW-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Manufacturer series: AUP
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT363; AUP; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SOT363
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Manufacturer series: AUP
auf Bestellung 2830 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
173+ | 0.41 EUR |
210+ | 0.34 EUR |
397+ | 0.18 EUR |
569+ | 0.13 EUR |
603+ | 0.12 EUR |
DMG1013TQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 580pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Case: SOT523
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 580pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Case: SOT523
Produkt ist nicht verfügbar
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DMG1013UWQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 622.4pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -3A
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.31W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 622.4pC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: -3A
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Case: SOT323
Produkt ist nicht verfügbar
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SMCJ64CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP2078LCA3-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Case: X4-DSN1006-3
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Case: X4-DSN1006-3
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
Produkt ist nicht verfügbar
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AP22816BKAWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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AP22816BKBWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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AP22816BKEWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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DDTC123JE-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80
Produkt ist nicht verfügbar
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MBRB20150CT-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
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MBRB20150CT |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
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SDT3060VCT |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Max. off-state voltage: 60V
Max. forward voltage: 0.6V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Leakage current: 50mA
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Max. off-state voltage: 60V
Max. forward voltage: 0.6V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Leakage current: 50mA
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
90+ | 0.8 EUR |
157+ | 0.46 EUR |
166+ | 0.43 EUR |
SDT3060VCTFP |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Max. off-state voltage: 60V
Max. forward voltage: 0.6V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Max. off-state voltage: 60V
Max. forward voltage: 0.6V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
85+ | 0.85 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
DMP3036SFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
115+ | 0.62 EUR |
262+ | 0.27 EUR |
277+ | 0.26 EUR |
2000+ | 0.25 EUR |
DDTA114YCA-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTA114YE-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTA114YLP-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTA114YUA-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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AP2311FGEG-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN3030-8
On-state resistance: 70mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN3030-8
On-state resistance: 70mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Produkt ist nicht verfügbar
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AP2152AFGEG-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Produkt ist nicht verfügbar
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AP2142AFGEG-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 0.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Produkt ist nicht verfügbar
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AP2162AFGEG-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Produkt ist nicht verfügbar
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AP2172AFGEG-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 85mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN3030-8
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 85mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN3030-8
Produkt ist nicht verfügbar
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AP2182AFGEG-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Produkt ist nicht verfügbar
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AP2192AFGEG-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 2
Case: U-DFN3030-8
Kind of package: reel; tape
Output current: 1.5A
On-state resistance: 85mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Produkt ist nicht verfügbar
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DDZ9702T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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