Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79593) > Seite 1298 nach 1327
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
ADTC144EUAQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry Quantity in set/package: 10000pcs. |
auf Bestellung 7140 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
DMN10H220L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.22Ω Drain current: 1.3A Power dissipation: 1.3W Pulsed drain current: 8A Gate-source voltage: ±16V Drain-source voltage: 100V Kind of package: 7 inch reel; tape Case: SOT23 Kind of channel: enhancement |
auf Bestellung 532 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
DMN10H220LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 1.3A Power dissipation: 1.3W Gate-source voltage: ±16V Drain-source voltage: 100V Kind of package: 7 inch reel; tape Application: automotive industry Case: SOT23 Kind of channel: enhancement |
auf Bestellung 1113 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
BAT54JW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double independent Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
1N4933-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns Case: DO41 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Capacitance: 15pF Reverse recovery time: 200ns Load current: 1A Max. forward voltage: 1.2V Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
APX803L20-32SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Mounting: SMD Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Kind of package: reel; tape Case: SOT23 Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C DC supply current: 1µA Maximum output current: 20mA Delay time: 220ms Supply voltage: 0.9...5.5V DC Threshold on-voltage: 3.2V Integrated circuit features: ±1,5% accuracy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
ZXTD2090E6TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 1A Power dissipation: 1.7W Case: SOT26 Pulsed collector current: 2A Current gain: 20...450 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 215MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
ADTA144ECAQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 Application: automotive industry Quantity in set/package: 10000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
ADTA144EUAQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 Application: automotive industry Quantity in set/package: 10000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
DFLS240L-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape Case: PowerDI®123 Capacitance: 90pF Max. off-state voltage: 40V Max. forward voltage: 0.5V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Power dissipation: 556mW Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
auf Bestellung 14973 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
ABS10B-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Case: SOPA4 Kind of package: reel; tape Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
ABS10M-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4 Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Max. forward impulse current: 24A Case: SOPA4 Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() +1 |
DSS5240T-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23 Type of transistor: PNP Case: SOT23 Frequency: 100MHz Collector-emitter voltage: 40V Collector current: 2A Power dissipation: 0.73W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Mounting: SMD |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
DSS5160T-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23 Polarisation: bipolar Type of transistor: PNP Case: SOT23 Mounting: SMD Power dissipation: 725mW Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...200 Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 2963 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
![]() |
KBJ406G | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
GBJ2506-F | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A Kind of package: tube Leads: flat pin Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 25A Max. forward impulse current: 350A Max. off-state voltage: 0.6kV Case: GBJ |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
KBJ408G | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
1N4148WS-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
1N4148WSQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
SMBJ8.0CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 8.89...10.23V Max. forward impulse current: 44.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
![]() |
SMCJ12A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
![]() |
AP2127K-3.0TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3V Output current: 0.4A Case: SOT23-5 Mounting: SMD Manufacturer series: AP2127 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
![]() |
DDZ5V6B-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±2.5% Semiconductor structure: single diode Leakage current: 50nA |
auf Bestellung 3887 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
UDZ5V6B-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD323 Mounting: SMD Semiconductor structure: single diode |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
AZ23C5V6-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
auf Bestellung 2130 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
AP2171DWG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Active logical level: high Mounting: SMD Kind of package: reel; tape On-state resistance: 95mΩ Output current: 1A Number of channels: 1 Supply voltage: 2.7...5.5V DC Kind of integrated circuit: high-side; USB switch Case: SOT25 Kind of output: P-Channel Type of integrated circuit: power switch |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
ZVN4525GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.31A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±40V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.44A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
D3V3S1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Max. off-state voltage: 3.3V Breakdown voltage: 3.8V Max. forward impulse current: 200A Case: 0201; 0603 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
D5V0M5B6LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Capacitance: 40pF Leakage current: 0.1µA Max. off-state voltage: 5V Breakdown voltage: 5.5V Number of channels: 5 Max. forward impulse current: 12A Case: U-DFN1616-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
![]() |
ZTX453 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1W Case: TO92 Current gain: 40...200 Mounting: THT Kind of package: bulk Frequency: 150MHz Quantity in set/package: 4000pcs. |
auf Bestellung 2541 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
ZTX453STZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1W Case: TO92 Current gain: 40...200 Mounting: THT Kind of package: Ammo Pack Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
DT2042-04TS-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; 10A; TSOT26; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 10A Mounting: SMD Case: TSOT26 Max. off-state voltage: 5.5V Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Capacitance: 1.5pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
DMP1045U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD Version: ESD Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.1A On-state resistance: 75mΩ Power dissipation: 0.8W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
1N5407G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD Case: DO201AD Mounting: THT Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Capacitance: 40pF Reverse recovery time: 2µs Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 125A Max. off-state voltage: 0.8kV Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
BCX38C | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 1W Case: TO92 Pulsed collector current: 2A Current gain: 5000...10000 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk |
auf Bestellung 3924 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
SMBJ100A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
RS1G-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
RS1GB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
AP61302QZ6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Kind of integrated circuit: DC/DC converter Case: SOT563 Type of integrated circuit: PMIC Kind of package: reel; tape Operating temperature: -40...85°C Output current: 3A Output voltage: 0.6...5.5V DC Input voltage: 2.4...5.5V DC Efficiency: 84% Application: automotive industry Topology: buck |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
1N5401G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 125A; DO201AD; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Capacitance: 40pF Reverse recovery time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
DFLZ24-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode Power dissipation: 1W Case: PowerDI®123 Mounting: SMD Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Zener voltage: 24V Tolerance: ±5% |
auf Bestellung 2315 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
DDTC123YE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 33 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
DDTC123YUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 33 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
KBP304G | DIODES INCORPORATED |
![]() ![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat Leads: flat pin Version: flat Case: KBP Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 1.1V Load current: 3A Max. off-state voltage: 0.4kV Max. forward impulse current: 90A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
1SMB5927B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 417 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
B350B-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape Mounting: SMD Load current: 3A Case: SMB Leakage current: 20mA Type of diode: Schottky rectifying Max. off-state voltage: 50V Kind of package: reel; tape Max. forward impulse current: 100A Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SMAJ60AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
P4SMAJ60ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
P6SMAJ60ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
ZXT12N50DXTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.87W Case: MSOP8 Pulsed collector current: 10A Current gain: 50...900 Mounting: SMD Kind of package: reel; tape Frequency: 132MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
US1K-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 2399 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
BAV19WS-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2210 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
BAV19W-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
ZTX651QSTZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 1.5W Case: TO92 Current gain: 40...300 Mounting: THT Kind of package: Ammo Pack Frequency: 175MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
ZTX651STZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 1.5W Case: TO92 Current gain: 40...300 Mounting: THT Kind of package: Ammo Pack Frequency: 175MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
DMN63D8LV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.45W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3145 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
FZT658TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 400V; 0.5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Quantity in set/package: 1000pcs. |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
74AHC1G126W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; AHC; -40÷125°C Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SOT25 Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of integrated circuit: buffer; non-inverting Kind of output: 3-state Manufacturer series: AHC |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
AP74700QW6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; OR controller; Ch: 1; SMD; SOT26; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: OR controller Number of channels: 1 Mounting: SMD Case: SOT26 Kind of package: reel; tape Active logical level: high Supply voltage: 3.2...65V |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
AL5802-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; LED driver; SOT26; 120mA; Ch: 2 Kind of package: reel; tape Kind of integrated circuit: LED driver Type of integrated circuit: driver Mounting: SMD Case: SOT26 Topology: single transistor Operating temperature: -40...125°C Output current: 0.12A Number of channels: 2 Operating voltage: 4.5...30V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
ADTC144EUAQ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
auf Bestellung 7140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1520+ | 0.047 EUR |
2070+ | 0.035 EUR |
2340+ | 0.031 EUR |
2370+ | 0.03 EUR |
2505+ | 0.029 EUR |
2605+ | 0.027 EUR |
DMN10H220L-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.22Ω
Drain current: 1.3A
Power dissipation: 1.3W
Pulsed drain current: 8A
Gate-source voltage: ±16V
Drain-source voltage: 100V
Kind of package: 7 inch reel; tape
Case: SOT23
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.22Ω
Drain current: 1.3A
Power dissipation: 1.3W
Pulsed drain current: 8A
Gate-source voltage: ±16V
Drain-source voltage: 100V
Kind of package: 7 inch reel; tape
Case: SOT23
Kind of channel: enhancement
auf Bestellung 532 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
178+ | 0.4 EUR |
217+ | 0.33 EUR |
237+ | 0.3 EUR |
532+ | 0.13 EUR |
DMN10H220LQ-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.3A
Power dissipation: 1.3W
Gate-source voltage: ±16V
Drain-source voltage: 100V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.3A
Power dissipation: 1.3W
Gate-source voltage: ±16V
Drain-source voltage: 100V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
Kind of channel: enhancement
auf Bestellung 1113 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
200+ | 0.36 EUR |
234+ | 0.31 EUR |
317+ | 0.23 EUR |
538+ | 0.13 EUR |
676+ | 0.11 EUR |
715+ | 0.1 EUR |
BAT54JW-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4933-T |
![]() |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 15pF
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 15pF
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APX803L20-32SA-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.2V
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.2V
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXTD2090E6TA |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ADTA144ECAQ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ADTA144EUAQ-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DFLS240L-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Case: PowerDI®123
Capacitance: 90pF
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Power dissipation: 556mW
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Case: PowerDI®123
Capacitance: 90pF
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Power dissipation: 556mW
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 14973 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
163+ | 0.44 EUR |
178+ | 0.4 EUR |
360+ | 0.2 EUR |
382+ | 0.19 EUR |
3000+ | 0.18 EUR |
ABS10B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Case: SOPA4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Case: SOPA4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ABS10M-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 24A
Case: SOPA4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 24A
Case: SOPA4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSS5240T-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Type of transistor: PNP
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.73W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Type of transistor: PNP
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.73W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
265+ | 0.27 EUR |
479+ | 0.15 EUR |
1011+ | 0.071 EUR |
1069+ | 0.067 EUR |
DSS5160T-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Mounting: SMD
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...200
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Mounting: SMD
Power dissipation: 725mW
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...200
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 2963 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
233+ | 0.31 EUR |
365+ | 0.2 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
KBJ406G |
![]() |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
49+ | 1.46 EUR |
GBJ2506-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Kind of package: tube
Leads: flat pin
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 350A
Max. off-state voltage: 0.6kV
Case: GBJ
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Kind of package: tube
Leads: flat pin
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 350A
Max. off-state voltage: 0.6kV
Case: GBJ
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.96 EUR |
53+ | 1.37 EUR |
56+ | 1.29 EUR |
75+ | 0.96 EUR |
KBJ408G |
![]() |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.5 EUR |
69+ | 1.04 EUR |
76+ | 0.94 EUR |
102+ | 0.71 EUR |
107+ | 0.67 EUR |
1N4148WS-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4148WSQ-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ8.0CA-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMCJ12A-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP2127K-3.0TRG1 |
![]() |
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2127
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2127
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDZ5V6B-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Leakage current: 50nA
auf Bestellung 3887 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
544+ | 0.13 EUR |
618+ | 0.12 EUR |
745+ | 0.096 EUR |
1027+ | 0.07 EUR |
1525+ | 0.047 EUR |
2243+ | 0.032 EUR |
2370+ | 0.03 EUR |
3000+ | 0.029 EUR |
UDZ5V6B-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
596+ | 0.12 EUR |
672+ | 0.11 EUR |
870+ | 0.082 EUR |
1695+ | 0.042 EUR |
1793+ | 0.04 EUR |
AZ23C5V6-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
633+ | 0.11 EUR |
839+ | 0.085 EUR |
940+ | 0.076 EUR |
1401+ | 0.051 EUR |
1480+ | 0.048 EUR |
AP2171DWG-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Active logical level: high
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
Case: SOT25
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Active logical level: high
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
Case: SOT25
Kind of output: P-Channel
Type of integrated circuit: power switch
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
220+ | 0.33 EUR |
247+ | 0.29 EUR |
288+ | 0.25 EUR |
400+ | 0.18 EUR |
424+ | 0.17 EUR |
ZVN4525GTA |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.31A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.31A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.44A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D3V3S1U2LP1610-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 200A
Case: 0201; 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 200A
Case: 0201; 0603
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D5V0M5B6LP16-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 40pF
Leakage current: 0.1µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Number of channels: 5
Max. forward impulse current: 12A
Case: U-DFN1616-6
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 40pF
Leakage current: 0.1µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Number of channels: 5
Max. forward impulse current: 12A
Case: U-DFN1616-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZTX453 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Quantity in set/package: 4000pcs.
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Quantity in set/package: 4000pcs.
auf Bestellung 2541 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
116+ | 0.62 EUR |
195+ | 0.37 EUR |
206+ | 0.35 EUR |
1000+ | 0.33 EUR |
ZTX453STZ |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DT2042-04TS-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 10A
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 10A
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP1045U-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Version: ESD
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Version: ESD
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
1N5407G-T |
![]() |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD
Case: DO201AD
Mounting: THT
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Reverse recovery time: 2µs
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD
Case: DO201AD
Mounting: THT
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Reverse recovery time: 2µs
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCX38C |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 2A
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 2A
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
auf Bestellung 3924 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
84+ | 0.86 EUR |
99+ | 0.73 EUR |
195+ | 0.37 EUR |
206+ | 0.35 EUR |
SMBJ100A-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
281+ | 0.25 EUR |
321+ | 0.22 EUR |
391+ | 0.18 EUR |
516+ | 0.14 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
RS1G-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RS1GB-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AP61302QZ6-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Case: SOT563
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.6...5.5V DC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Application: automotive industry
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Case: SOT563
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.6...5.5V DC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Application: automotive industry
Topology: buck
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5401G-T |
![]() |
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 125A; DO201AD; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 125A; DO201AD; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DFLZ24-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Power dissipation: 1W
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 24V
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Power dissipation: 1W
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 24V
Tolerance: ±5%
auf Bestellung 2315 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
278+ | 0.26 EUR |
428+ | 0.17 EUR |
569+ | 0.13 EUR |
603+ | 0.12 EUR |
DDTC123YE-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DDTC123YUA-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KBP304G |
![]() ![]() ![]() |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Leads: flat pin
Version: flat
Case: KBP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 90A
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Leads: flat pin
Version: flat
Case: KBP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 90A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SMB5927B-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
307+ | 0.23 EUR |
417+ | 0.17 EUR |
B350B-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Case: SMB
Leakage current: 20mA
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Case: SMB
Leakage current: 20mA
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ60AQ-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P4SMAJ60ADF-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMAJ60ADF-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXT12N50DXTA |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
US1K-13-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
432+ | 0.17 EUR |
496+ | 0.14 EUR |
1112+ | 0.064 EUR |
1163+ | 0.061 EUR |
BAV19WS-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2210 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
463+ | 0.15 EUR |
562+ | 0.13 EUR |
1171+ | 0.061 EUR |
1563+ | 0.046 EUR |
2210+ | 0.033 EUR |
BAV19W-7-F |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
511+ | 0.14 EUR |
652+ | 0.11 EUR |
968+ | 0.074 EUR |
1902+ | 0.038 EUR |
2009+ | 0.036 EUR |
ZTX651QSTZ |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZTX651STZ |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN63D8LV-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3145 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
334+ | 0.21 EUR |
480+ | 0.15 EUR |
565+ | 0.13 EUR |
1211+ | 0.059 EUR |
1283+ | 0.056 EUR |
FZT658TA |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 1000pcs.
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
93+ | 0.77 EUR |
74AHC1G126W5-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; AHC; -40÷125°C
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: AHC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; AHC; -40÷125°C
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: AHC
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
AP74700QW6-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; OR controller; Ch: 1; SMD; SOT26; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: OR controller
Number of channels: 1
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Active logical level: high
Supply voltage: 3.2...65V
Category: Power switches - integrated circuits
Description: IC: power switch; OR controller; Ch: 1; SMD; SOT26; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: OR controller
Number of channels: 1
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Active logical level: high
Supply voltage: 3.2...65V
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
117+ | 0.61 EUR |
130+ | 0.55 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
AL5802-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT26; 120mA; Ch: 2
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Case: SOT26
Topology: single transistor
Operating temperature: -40...125°C
Output current: 0.12A
Number of channels: 2
Operating voltage: 4.5...30V DC
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT26; 120mA; Ch: 2
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Case: SOT26
Topology: single transistor
Operating temperature: -40...125°C
Output current: 0.12A
Number of channels: 2
Operating voltage: 4.5...30V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH