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ZXMS6004SGTA ZXMS6004SGTA DIODES INCORPORATED ZXMS6004SG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
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ZXMS6004DT8TA DIODES INCORPORATED ZXMS6004DT8.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.2A; Ch: 2; N-Channel; SMD; SM8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SM8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004DGQ-13 DIODES INCORPORATED ZXMS6004DGQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004N8-13 DIODES INCORPORATED ZXMS6004N8.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004N8Q-13 DIODES INCORPORATED ZXMS6004N8Q.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
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ZXMS6004SGQTA DIODES INCORPORATED ZXMS6004SGQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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DMP3026SFDE-13 DIODES INCORPORATED DMP3026SFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDE-7 DIODES INCORPORATED DMP3026SFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-13 DIODES INCORPORATED DMP3026SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-7 DIODES INCORPORATED DMP3026SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAV99DWQ-7-F BAV99DWQ-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985810758EC4D98BF&compId=BAV99DWQ.pdf?ci_sign=8da9c6050e753815a52fd50d5ee8e3caf08c9700 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Capacitance: 2pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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311+0.23 EUR
396+0.18 EUR
625+0.11 EUR
1070+0.067 EUR
1132+0.063 EUR
3000+0.061 EUR
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ZXMN10A07ZTA ZXMN10A07ZTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C36EB8460EE749&compId=ZXMN10A07Z.pdf?ci_sign=d3abad8da629bc52d1e832144338ba29f2605247 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.5W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FCX1047ATA DIODES INCORPORATED FCX1047A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 10V
Collector current: 4A
Case: SOT89
Current gain: 60...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 20A
Power dissipation: 2W
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FCX1051ATA DIODES INCORPORATED FCX1051A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 155MHz
Pulsed collector current: 10A
Power dissipation: 2W
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FCX1053ATA DIODES INCORPORATED FCX1053A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Pulsed collector current: 10A
Power dissipation: 2W
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AP7365-10YG-13 AP7365-10YG-13 DIODES INCORPORATED AP7365.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2%
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1V
Output current: 0.6A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7365
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±2%
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ZXTP19100CZTA DIODES INCORPORATED ZXTP19100CZ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 142MHz
Pulsed collector current: 3A
Power dissipation: 4.46W
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BAT54LP-7 BAT54LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E731098CB34143&compId=BAT54LP.pdf?ci_sign=e935419e32d10145da12ed6f57f2facde4c361fc Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
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239+0.3 EUR
355+0.2 EUR
652+0.11 EUR
1255+0.057 EUR
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SMAJ20A-13-F SMAJ20A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ200A-13-F SMAJ200A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ200AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P4SMAJ20ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P6SMAJ20ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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DMG2301L-7 DIODES INCORPORATED DMG2301L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
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BZT52C10T-7 BZT52C10T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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432+0.17 EUR
496+0.14 EUR
731+0.098 EUR
870+0.082 EUR
1856+0.039 EUR
1962+0.036 EUR
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BZT52C10LP-7 BZT52C10LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 10V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C10Q-7-F BZT52C10Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C10SQ-7-F DIODES INCORPORATED ds30093.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C10TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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SMAJ78CA-13-F SMAJ78CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 86.7÷95.8V; 2.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ78CA-13-F SMBJ78CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ78CA-13-F SMCJ78CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ78CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SDM40E20LA-7 SDM40E20LA-7 DIODES INCORPORATED SDM40E20L_S_C_A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.4A
Semiconductor structure: common anode; double
Capacitance: 120pF
Max. forward voltage: 0.43V
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 0.25mA
Produkt ist nicht verfügbar
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SDM40E20LAQ-7 SDM40E20LAQ-7 DIODES INCORPORATED SDM40E20LSQ-AQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.4A
Semiconductor structure: common anode; double
Capacitance: 120pF
Max. forward voltage: 0.43V
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 0.25mA
Application: automotive industry
Produkt ist nicht verfügbar
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DMN3010LK3-13 DIODES INCORPORATED DMN3010LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.5A
Pulsed drain current: 90A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H170SFDE-7 DIODES INCORPORATED DMN10H170SFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 10A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DDZ30ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Zener voltage: 30V
Produkt ist nicht verfügbar
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DDTB113ZC-7-F DIODES INCORPORATED DDTB_XXXX_C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Current gain: 56
Produkt ist nicht verfügbar
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DDTB114EC-7-F DIODES INCORPORATED DDTB_XXXX_C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Current gain: 56
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DDTD114EC-7-F DIODES INCORPORATED DDTD_XXXX_C.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
Produkt ist nicht verfügbar
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ZDT6753TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F41A8636E0D2&compId=ZDT6753.pdf?ci_sign=40eb497d0bec14052cf7ffef147444255b323d97 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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ZDT6753TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F41A8636E0D2&compId=ZDT6753.pdf?ci_sign=40eb497d0bec14052cf7ffef147444255b323d97 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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AP2125KS-1.8TRG1 AP2125KS-1.8TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.36A; SC70; SMD
Output voltage: 1.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Kind of package: reel; tape
Manufacturer series: AP2125
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: SC70
Tolerance: ±2%
Produkt ist nicht verfügbar
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DMG2307L-7 DMG2307L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA348EC9082748&compId=DMG2307L.pdf?ci_sign=352537f1d7e959733ec1c2b5d06657d785f0104c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Case: SOT23
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Type of transistor: P-MOSFET
Power dissipation: 0.76W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
293+0.24 EUR
373+0.19 EUR
418+0.17 EUR
750+0.096 EUR
Mindestbestellmenge: 167
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DMG2307LQ-7 DMG2307LQ-7 DIODES INCORPORATED DMG2307LQ_Rev2.3_Feb2022.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Case: SOT23
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 0.134Ω
Type of transistor: P-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 8.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
auf Bestellung 2766 Stücke:
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179+0.4 EUR
290+0.25 EUR
463+0.15 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 179
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DMP4065S-7 DMP4065S-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1BC5F71D738BF&compId=DMP4065S.pdf?ci_sign=4b4667a6162feb97eecdbb433462fbd1c588da01 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
262+0.27 EUR
365+0.2 EUR
424+0.17 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 179
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ZXMS6005DGTA ZXMS6005DGTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC3B1B3B3118BF&compId=ZXMS6005DG.pdf?ci_sign=5504f62be868729aef97012db3267bb1b3cb1d73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 1.3W
Case: SOT223
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
auf Bestellung 49 Stücke:
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ZXMS6001N3TA DIODES INCORPORATED ZXMS6001N3.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.1A; Ch: 1; SMD; SOT223; reel,tape
Case: SOT223
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...6V DC
Output current: 1.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of integrated circuit: low-side
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ZXMS6005N8-13 DIODES INCORPORATED ZXMS6005N8.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6005DN8Q-13 DIODES INCORPORATED ZXMS6005DN8Q.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.8A; Ch: 2; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.8A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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ZXMS6006SGTA ZXMS6006SGTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC4989B3A798BF&compId=ZXMS6006SG.pdf?ci_sign=1bc3e2533ecabe88f1ecd1bedb288d5423b4ecc7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2.8A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.8A
Power dissipation: 1W
Case: SOT223
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
Produkt ist nicht verfügbar
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PI7C9X7958BNBE DIODES INCORPORATED PI7C9X7958.pdf Category: Unclassified
Description: PI7C9X7958BNBE
auf Bestellung 567 Stücke:
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189+26.17 EUR
Mindestbestellmenge: 189
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AP22653W6-7 AP22653W6-7 DIODES INCORPORATED AP22652_53_52A_53A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 65mΩ
Output current: 2.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
auf Bestellung 2967 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
101+0.71 EUR
123+0.58 EUR
360+0.2 EUR
382+0.19 EUR
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B140HW-7 B140HW-7 DIODES INCORPORATED B140HW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 16A
Kind of package: reel; tape
auf Bestellung 2566 Stücke:
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239+0.3 EUR
365+0.2 EUR
601+0.12 EUR
1247+0.057 EUR
1320+0.054 EUR
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B140HB-13-F B140HB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E5010D36DD0143&compId=B140HB.pdf?ci_sign=6032fcbb51223fd8fbc516cc2a28a64cd6281e39 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Capacitance: 80pF
Max. off-state voltage: 40V
Max. forward voltage: 0.49V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
auf Bestellung 2311 Stücke:
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334+0.21 EUR
569+0.13 EUR
603+0.12 EUR
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BZT52C4V3-7-F BZT52C4V3-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
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770+0.093 EUR
1017+0.07 EUR
1507+0.047 EUR
3000+0.024 EUR
Mindestbestellmenge: 500
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BZT52C4V3S-7-F BZT52C4V3S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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BZT52C4V3Q-7-F DIODES INCORPORATED Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C4V3LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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ZXMS6004SGTA ZXMS6004SG.pdf
ZXMS6004SGTA
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
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ZXMS6004DT8TA ZXMS6004DT8.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.2A; Ch: 2; N-Channel; SMD; SM8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SM8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004DGQ-13 ZXMS6004DGQ.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6004N8-13 ZXMS6004N8.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004N8Q-13 ZXMS6004N8Q.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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ZXMS6004SGQTA ZXMS6004SGQ.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.59 EUR
Mindestbestellmenge: 1000
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DMP3026SFDE-13 DMP3026SFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDE-7 DMP3026SFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3026SFDF-13 DMP3026SFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3026SFDF-7 DMP3026SFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAV99DWQ-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE985810758EC4D98BF&compId=BAV99DWQ.pdf?ci_sign=8da9c6050e753815a52fd50d5ee8e3caf08c9700
BAV99DWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Capacitance: 2pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
311+0.23 EUR
396+0.18 EUR
625+0.11 EUR
1070+0.067 EUR
1132+0.063 EUR
3000+0.061 EUR
Mindestbestellmenge: 239
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ZXMN10A07ZTA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C36EB8460EE749&compId=ZXMN10A07Z.pdf?ci_sign=d3abad8da629bc52d1e832144338ba29f2605247
ZXMN10A07ZTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.5W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
130+0.55 EUR
164+0.44 EUR
227+0.32 EUR
240+0.3 EUR
500+0.29 EUR
Mindestbestellmenge: 84
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FCX1047ATA FCX1047A.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 10V
Collector current: 4A
Case: SOT89
Current gain: 60...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 20A
Power dissipation: 2W
Produkt ist nicht verfügbar
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FCX1051ATA FCX1051A.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 155MHz
Pulsed collector current: 10A
Power dissipation: 2W
Produkt ist nicht verfügbar
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FCX1053ATA FCX1053A.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Pulsed collector current: 10A
Power dissipation: 2W
Produkt ist nicht verfügbar
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AP7365-10YG-13 AP7365.pdf
AP7365-10YG-13
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2%
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1V
Output current: 0.6A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7365
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±2%
Produkt ist nicht verfügbar
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ZXTP19100CZTA ZXTP19100CZ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 142MHz
Pulsed collector current: 3A
Power dissipation: 4.46W
Produkt ist nicht verfügbar
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BAT54LP-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E731098CB34143&compId=BAT54LP.pdf?ci_sign=e935419e32d10145da12ed6f57f2facde4c361fc
BAT54LP-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
auf Bestellung 1255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
355+0.2 EUR
652+0.11 EUR
1255+0.057 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ20A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ20A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
Mindestbestellmenge: 55
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SMAJ200A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ200A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
374+0.19 EUR
589+0.12 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ200AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P4SMAJ20ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Produkt ist nicht verfügbar
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P6SMAJ20ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Produkt ist nicht verfügbar
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DMG2301L-7 DMG2301L.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 171000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.046 EUR
Mindestbestellmenge: 3000
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BZT52C10T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C10T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 2424 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
496+0.14 EUR
731+0.098 EUR
870+0.082 EUR
1856+0.039 EUR
1962+0.036 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C10LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
BZT52C10LP-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 10V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
222+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C10Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C10Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C10SQ-7-F ds30093.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C10TQ-7-F ds30502.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ78CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ78CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 86.7÷95.8V; 2.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ78CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ78CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ78CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ78CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMCJ78CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SDM40E20LA-7 SDM40E20L_S_C_A.pdf
SDM40E20LA-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.4A
Semiconductor structure: common anode; double
Capacitance: 120pF
Max. forward voltage: 0.43V
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 0.25mA
Produkt ist nicht verfügbar
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SDM40E20LAQ-7 SDM40E20LSQ-AQ.pdf
SDM40E20LAQ-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.4A
Semiconductor structure: common anode; double
Capacitance: 120pF
Max. forward voltage: 0.43V
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 0.25mA
Application: automotive industry
Produkt ist nicht verfügbar
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DMN3010LK3-13 DMN3010LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.5A
Pulsed drain current: 90A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN10H170SFDE-7 DMN10H170SFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 10A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DDZ30ASF-7 ds31987.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Zener voltage: 30V
Produkt ist nicht verfügbar
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DDTB113ZC-7-F DDTB_XXXX_C.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Current gain: 56
Produkt ist nicht verfügbar
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DDTB114EC-7-F DDTB_XXXX_C.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Current gain: 56
Produkt ist nicht verfügbar
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DDTD114EC-7-F DDTD_XXXX_C.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
Produkt ist nicht verfügbar
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ZDT6753TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F41A8636E0D2&compId=ZDT6753.pdf?ci_sign=40eb497d0bec14052cf7ffef147444255b323d97
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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ZDT6753TC pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F41A8636E0D2&compId=ZDT6753.pdf?ci_sign=40eb497d0bec14052cf7ffef147444255b323d97
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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AP2125KS-1.8TRG1 AP2125.pdf
AP2125KS-1.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.36A; SC70; SMD
Output voltage: 1.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Kind of package: reel; tape
Manufacturer series: AP2125
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: SC70
Tolerance: ±2%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG2307L-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA348EC9082748&compId=DMG2307L.pdf?ci_sign=352537f1d7e959733ec1c2b5d06657d785f0104c
DMG2307L-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Case: SOT23
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Type of transistor: P-MOSFET
Power dissipation: 0.76W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
293+0.24 EUR
373+0.19 EUR
418+0.17 EUR
750+0.096 EUR
Mindestbestellmenge: 167
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DMG2307LQ-7 DMG2307LQ_Rev2.3_Feb2022.pdf
DMG2307LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Case: SOT23
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 0.134Ω
Type of transistor: P-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 8.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
auf Bestellung 2766 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
290+0.25 EUR
463+0.15 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 179
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DMP4065S-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1BC5F71D738BF&compId=DMP4065S.pdf?ci_sign=4b4667a6162feb97eecdbb433462fbd1c588da01
DMP4065S-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
262+0.27 EUR
365+0.2 EUR
424+0.17 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
ZXMS6005DGTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC3B1B3B3118BF&compId=ZXMS6005DG.pdf?ci_sign=5504f62be868729aef97012db3267bb1b3cb1d73
ZXMS6005DGTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 1.3W
Case: SOT223
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.46 EUR
Mindestbestellmenge: 49
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ZXMS6001N3TA ZXMS6001N3.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.1A; Ch: 1; SMD; SOT223; reel,tape
Case: SOT223
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...6V DC
Output current: 1.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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ZXMS6005N8-13 ZXMS6005N8.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ZXMS6005DN8Q-13 ZXMS6005DN8Q.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.8A; Ch: 2; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.8A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMS6006SGTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC4989B3A798BF&compId=ZXMS6006SG.pdf?ci_sign=1bc3e2533ecabe88f1ecd1bedb288d5423b4ecc7
ZXMS6006SGTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2.8A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.8A
Power dissipation: 1W
Case: SOT223
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
Produkt ist nicht verfügbar
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PI7C9X7958BNBE PI7C9X7958.pdf
Hersteller: DIODES INCORPORATED
Category: Unclassified
Description: PI7C9X7958BNBE
auf Bestellung 567 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
189+26.17 EUR
Mindestbestellmenge: 189
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AP22653W6-7 AP22652_53_52A_53A.pdf
AP22653W6-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 65mΩ
Output current: 2.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
auf Bestellung 2967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
101+0.71 EUR
123+0.58 EUR
360+0.2 EUR
382+0.19 EUR
Mindestbestellmenge: 71
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B140HW-7 B140HW.pdf
B140HW-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 16A
Kind of package: reel; tape
auf Bestellung 2566 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
365+0.2 EUR
601+0.12 EUR
1247+0.057 EUR
1320+0.054 EUR
Mindestbestellmenge: 239
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B140HB-13-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E5010D36DD0143&compId=B140HB.pdf?ci_sign=6032fcbb51223fd8fbc516cc2a28a64cd6281e39
B140HB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Capacitance: 80pF
Max. off-state voltage: 40V
Max. forward voltage: 0.49V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
auf Bestellung 2311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
244+0.29 EUR
334+0.21 EUR
569+0.13 EUR
603+0.12 EUR
Mindestbestellmenge: 167
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BZT52C4V3-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C4V3-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
770+0.093 EUR
1017+0.07 EUR
1507+0.047 EUR
3000+0.024 EUR
Mindestbestellmenge: 500
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BZT52C4V3S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C4V3S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C4V3Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C4V3LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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