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DFLZ24-7 DFLZ24-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2315 Stücke:
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186+0.39 EUR
264+0.27 EUR
414+0.17 EUR
569+0.13 EUR
603+0.12 EUR
Mindestbestellmenge: 186
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DGD0590AFU-7 DIODES INCORPORATED DGD0590A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
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DGD0507AFN-7 DIODES INCORPORATED DGD0507A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
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DDZ20ASF-7 DDZ20ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; single diode; 70nA
Power dissipation: 0.5W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 70nA
Type of diode: Zener
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DMHT6016LFJ-13 DIODES INCORPORATED DMHT6016LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: V-DFN5045-12
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DDTC123YE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC123YUA-7-F DIODES INCORPORATED ds30322.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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KBP304G DIODES INCORPORATED KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Electrical mounting: THT
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Max. off-state voltage: 0.4kV
Case: KBP
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
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AL3644CH12-7 DIODES INCORPORATED AL3644.pdf Category: LED drivers
Description: IC: driver; boost; LED driver; I2C; U-WLB1713-12; Ch: 2; 2.5÷5VDC
Interface: I2C
Kind of integrated circuit: LED driver
Operating temperature: -40...85°C
Type of integrated circuit: driver
Number of channels: 2
Case: U-WLB1713-12
Efficiency: 85%
Kind of package: reel; tape
Mounting: SMD
Topology: boost
Operating voltage: 2.5...5V DC
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AL3644TTCH12-7 DIODES INCORPORATED AL3644.pdf Category: LED drivers
Description: IC: driver; boost; LED driver; I2C; U-WLB1713-12; Ch: 2; 2.5÷5VDC
Interface: I2C
Kind of integrated circuit: LED driver
Operating temperature: -40...85°C
Type of integrated circuit: driver
Number of channels: 2
Case: U-WLB1713-12
Efficiency: 85%
Kind of package: reel; tape
Mounting: SMD
Topology: boost
Operating voltage: 2.5...5V DC
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GBU8005 GBU8005 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC713906BD8748&compId=gbu8005-gbu810.pdf?ci_sign=b3d92291c686ef4b0377879590787a104b2f295a Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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1SMB5927B-13 1SMB5927B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 417 Stücke:
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200+0.36 EUR
300+0.24 EUR
407+0.18 EUR
417+0.17 EUR
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BAV756DW-7-F BAV756DW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE701F80BC09820&compId=BAV756DW.pdf?ci_sign=0bed8e73a71c122ee1e828e7b17dc8e962465199 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; common cathode; double x2
Capacitance: 2pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
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B350B-13-F DIODES INCORPORATED B320B-B360B_Rev10-2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Case: SMB
Leakage current: 20mA
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Produkt ist nicht verfügbar
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FZT1151ATA FZT1151ATA DIODES INCORPORATED FZT1151A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 3W; SOT223
Power dissipation: 3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Frequency: 145MHz
Collector-emitter voltage: 40V
Collector current: 3A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
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SMAJ60AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P4SMAJ60ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ60ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZXT12N50DXTA DIODES INCORPORATED ZXT12N50DX.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
Produkt ist nicht verfügbar
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ZVN3306ASTZ DIODES INCORPORATED ZVN3306A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 3A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Produkt ist nicht verfügbar
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US1K-13-F US1K-13-F DIODES INCORPORATED ds16008.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. forward voltage: 1.7V
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
432+0.17 EUR
496+0.14 EUR
1112+0.064 EUR
1191+0.06 EUR
Mindestbestellmenge: 385
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BAV19WS-7-F BAV19WS-7-F DIODES INCORPORATED BAV19WS-BAV21WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2210 Stücke:
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385+0.19 EUR
463+0.15 EUR
562+0.13 EUR
1171+0.061 EUR
1563+0.046 EUR
2210+0.033 EUR
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BAV19W-7-F BAV19W-7-F DIODES INCORPORATED BAV19W-BAV21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
511+0.14 EUR
652+0.11 EUR
968+0.074 EUR
1902+0.038 EUR
2009+0.036 EUR
Mindestbestellmenge: 358
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DDTD142JC-7-F DIODES INCORPORATED DDTD_LO-R1_C.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 0.47kΩ
Case: SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 0.47kΩ
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Produkt ist nicht verfügbar
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ZTX651QSTZ DIODES INCORPORATED ZTX651.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
Produkt ist nicht verfügbar
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ZTX651STZ DIODES INCORPORATED ZTX650.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Produkt ist nicht verfügbar
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DMN63D8LV-7 DMN63D8LV-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FDAD26A10D9C745&compId=DMN63D8LV.pdf?ci_sign=dd288f3fd2488c2c7eabedd204bade00f1368026 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 145 Stücke:
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145+0.49 EUR
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APX803L20-17SA-7 APX803L20-17SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.7V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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ZTX949 DIODES INCORPORATED ZTX949.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 4.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 4.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
Produkt ist nicht verfügbar
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ZTX949STZ DIODES INCORPORATED ZTX949.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 4.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 4.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 100MHz
Produkt ist nicht verfügbar
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ZXMN4A06KTC ZXMN4A06KTC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC0BFBEB8B58BF&compId=ZXMN4A06K.pdf?ci_sign=ea4615c4bb8496297a4f60758b57b0c0d5dcf850 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.9A; 4.2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.9A
Power dissipation: 4.2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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S5JC-13-F S5JC-13-F DIODES INCORPORATED ds16007.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: SMC
auf Bestellung 2869 Stücke:
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109+0.66 EUR
138+0.52 EUR
219+0.33 EUR
232+0.31 EUR
500+0.3 EUR
Mindestbestellmenge: 109
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FZT658TA FZT658TA DIODES INCORPORATED FZT658.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 93 Stücke:
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71+1.02 EUR
93+0.77 EUR
Mindestbestellmenge: 71
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74AHC1G126W5-7 74AHC1G126W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEDD4617FA47E28&compId=74AHC1G126.pdf?ci_sign=7bf009c7c2fbce5b9d4850b1720fb946452c8462 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; AHC; -40÷125°C
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: AHC
auf Bestellung 4 Stücke:
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4+17.88 EUR
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MMSZ5239B-7-F MMSZ5239B-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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1000+0.072 EUR
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AP74700QW6-7 DIODES INCORPORATED AP74700Q.pdf Category: Power switches - integrated circuits
Description: IC: power switch; OR controller; Ch: 1; SMD; SOT26; reel,tape
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Kind of integrated circuit: OR controller
Supply voltage: 3.2...65V
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AP2281-3WG-7 AP2281-3WG-7 DIODES INCORPORATED AP2281-3WG-7.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 80mΩ
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
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BC56-16PA-7 DIODES INCORPORATED BC56_16PA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 520mW; U-DFN2020-3
Mounting: SMD
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Case: U-DFN2020-3
Power dissipation: 0.52W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 125MHz
Collector-emitter voltage: 80V
Current gain: 25...250
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B2100Q-13-F DIODES INCORPORATED B270Q_B2100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Leakage current: 2mA
Capacitance: 75pF
Kind of package: reel; tape
Application: automotive industry
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AL5802-13 DIODES INCORPORATED Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT26; 120mA; Ch: 2
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Case: SOT26
Topology: single transistor
Operating temperature: -40...125°C
Output current: 0.12A
Number of channels: 2
Operating voltage: 4.5...30V DC
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DMG4413LSS-13 DMG4413LSS-13 DIODES INCORPORATED ds31754.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Pulsed drain current: -45A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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74AHC1G00W5-7 74AHC1G00W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02620D3&compId=74AHC1G00.pdf?ci_sign=52e8df188cbc6aafe31b56e76eddfab03810bf75 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74AHC1G00SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02520D3&compId=74AHC1G00.pdf?ci_sign=0dbadd451621537d772998d719c1ec3a81e36664 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
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DMT2004UFV-7 DIODES INCORPORATED DMT2004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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DMP2004UFG-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Gate charge: 83nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -180A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -20V
Drain current: -95A
On-state resistance: 7mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
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DMP2004UFG-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Gate charge: 83nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -180A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -20V
Drain current: -95A
On-state resistance: 7mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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DMT2004UFDF-7 DIODES INCORPORATED DMT2004UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: 24V
Drain current: 11.2A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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DMT2004UFG-7 DIODES INCORPORATED DMT2004UFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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BAS21Q-7-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
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SBR10U45SP5-13 SBR10U45SP5-13 DIODES INCORPORATED SBR10U45SP5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
Technology: SBR®
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ZXTP4003ZTA ZXTP4003ZTA DIODES INCORPORATED ZXTP4003Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT89
Current gain: 60...133
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
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SMCJ18CA-13-F SMCJ18CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ18CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMAJ60CA-13-F SMAJ60CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ60CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AP2210N-2.5TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
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AL5809-25P1-7 AL5809-25P1-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B289DAE47426BE27&compId=AL5809-DTE.pdf?ci_sign=d0cfdabb918c811eac2ba2da19a1cc43c8739a51 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 25mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 25mA
Operating voltage: 2.5...60V DC
Number of channels: 1
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230+0.31 EUR
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AL5809-15S1-7 AL5809-15S1-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B289DAE47426BE27&compId=AL5809-DTE.pdf?ci_sign=d0cfdabb918c811eac2ba2da19a1cc43c8739a51 Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15mA
Operating voltage: 2.5...60V DC
Number of channels: 1
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250+0.29 EUR
500+0.27 EUR
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AL5809-90P1-7 AL5809-90P1-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B289DAE47426BE27&compId=AL5809-DTE.pdf?ci_sign=d0cfdabb918c811eac2ba2da19a1cc43c8739a51 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 90mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 90mA
Operating voltage: 2.5...60V DC
Number of channels: 1
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AL5809-25S1-7 AL5809-25S1-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B289DAE47426BE27&compId=AL5809-DTE.pdf?ci_sign=d0cfdabb918c811eac2ba2da19a1cc43c8739a51 Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 25mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 25mA
Operating voltage: 2.5...60V DC
Number of channels: 1
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DFLZ24-7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1
DFLZ24-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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414+0.17 EUR
569+0.13 EUR
603+0.12 EUR
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DGD0590AFU-7 DGD0590A.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
Produkt ist nicht verfügbar
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DGD0507AFN-7 DGD0507A.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
Produkt ist nicht verfügbar
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DDZ20ASF-7 ds31987.pdf
DDZ20ASF-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; single diode; 70nA
Power dissipation: 0.5W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 70nA
Type of diode: Zener
Produkt ist nicht verfügbar
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DMHT6016LFJ-13 DMHT6016LFJ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: V-DFN5045-12
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DDTC123YE-7-F ds30314.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDTC123YUA-7-F ds30322.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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KBP304G KBP304G-KBP310G.pdf KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Electrical mounting: THT
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Max. off-state voltage: 0.4kV
Case: KBP
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
Produkt ist nicht verfügbar
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AL3644CH12-7 AL3644.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; boost; LED driver; I2C; U-WLB1713-12; Ch: 2; 2.5÷5VDC
Interface: I2C
Kind of integrated circuit: LED driver
Operating temperature: -40...85°C
Type of integrated circuit: driver
Number of channels: 2
Case: U-WLB1713-12
Efficiency: 85%
Kind of package: reel; tape
Mounting: SMD
Topology: boost
Operating voltage: 2.5...5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL3644TTCH12-7 AL3644.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; boost; LED driver; I2C; U-WLB1713-12; Ch: 2; 2.5÷5VDC
Interface: I2C
Kind of integrated circuit: LED driver
Operating temperature: -40...85°C
Type of integrated circuit: driver
Number of channels: 2
Case: U-WLB1713-12
Efficiency: 85%
Kind of package: reel; tape
Mounting: SMD
Topology: boost
Operating voltage: 2.5...5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU8005 pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC713906BD8748&compId=gbu8005-gbu810.pdf?ci_sign=b3d92291c686ef4b0377879590787a104b2f295a
GBU8005
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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1SMB5927B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5927B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
300+0.24 EUR
407+0.18 EUR
417+0.17 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BAV756DW-7-F pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE701F80BC09820&compId=BAV756DW.pdf?ci_sign=0bed8e73a71c122ee1e828e7b17dc8e962465199
BAV756DW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; common cathode; double x2
Capacitance: 2pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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B350B-13-F B320B-B360B_Rev10-2.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Case: SMB
Leakage current: 20mA
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Produkt ist nicht verfügbar
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FZT1151ATA FZT1151A.pdf
FZT1151ATA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 3W; SOT223
Power dissipation: 3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Frequency: 145MHz
Collector-emitter voltage: 40V
Collector current: 3A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ60AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4SMAJ60ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMAJ60ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXT12N50DXTA ZXT12N50DX.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
Produkt ist nicht verfügbar
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ZVN3306ASTZ ZVN3306A.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 3A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Produkt ist nicht verfügbar
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US1K-13-F ds16008.pdf
US1K-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. forward voltage: 1.7V
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
432+0.17 EUR
496+0.14 EUR
1112+0.064 EUR
1191+0.06 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAV19WS-7-F BAV19WS-BAV21WS.pdf
BAV19WS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
463+0.15 EUR
562+0.13 EUR
1171+0.061 EUR
1563+0.046 EUR
2210+0.033 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAV19W-7-F BAV19W-BAV21W.pdf
BAV19W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
511+0.14 EUR
652+0.11 EUR
968+0.074 EUR
1902+0.038 EUR
2009+0.036 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
DDTD142JC-7-F DDTD_LO-R1_C.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 0.47kΩ
Case: SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 0.47kΩ
Base-emitter resistor: 10kΩ
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZTX651QSTZ ZTX651.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZTX651STZ ZTX650.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN63D8LV-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FDAD26A10D9C745&compId=DMN63D8LV.pdf?ci_sign=dd288f3fd2488c2c7eabedd204bade00f1368026
DMN63D8LV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
145+0.49 EUR
Mindestbestellmenge: 145
Im Einkaufswagen  Stück im Wert von  UAH
APX803L20-17SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L20-17SA-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.7V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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ZTX949 ZTX949.pdf
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 4.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 4.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZTX949STZ ZTX949.pdf
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 4.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 4.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN4A06KTC pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC0BFBEB8B58BF&compId=ZXMN4A06K.pdf?ci_sign=ea4615c4bb8496297a4f60758b57b0c0d5dcf850
ZXMN4A06KTC
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.9A; 4.2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.9A
Power dissipation: 4.2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S5JC-13-F ds16007.pdf
S5JC-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: SMC
auf Bestellung 2869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
138+0.52 EUR
219+0.33 EUR
232+0.31 EUR
500+0.3 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
FZT658TA FZT658.pdf
FZT658TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
93+0.77 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
74AHC1G126W5-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEDD4617FA47E28&compId=74AHC1G126.pdf?ci_sign=7bf009c7c2fbce5b9d4850b1720fb946452c8462
74AHC1G126W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; AHC; -40÷125°C
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: AHC
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5239B-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa
MMSZ5239B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 3130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
746+0.096 EUR
1000+0.072 EUR
1150+0.062 EUR
1866+0.038 EUR
2874+0.025 EUR
3049+0.023 EUR
Mindestbestellmenge: 746
Im Einkaufswagen  Stück im Wert von  UAH
AP74700QW6-7 AP74700Q.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; OR controller; Ch: 1; SMD; SOT26; reel,tape
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Kind of integrated circuit: OR controller
Supply voltage: 3.2...65V
auf Bestellung 1970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
117+0.61 EUR
130+0.55 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
AP2281-3WG-7 AP2281-3WG-7.pdf
AP2281-3WG-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 80mΩ
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
353+0.2 EUR
491+0.15 EUR
521+0.14 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BC56-16PA-7 BC56_16PA.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 520mW; U-DFN2020-3
Mounting: SMD
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Case: U-DFN2020-3
Power dissipation: 0.52W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 125MHz
Collector-emitter voltage: 80V
Current gain: 25...250
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B2100Q-13-F B270Q_B2100Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Leakage current: 2mA
Capacitance: 75pF
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL5802-13
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT26; 120mA; Ch: 2
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Mounting: SMD
Case: SOT26
Topology: single transistor
Operating temperature: -40...125°C
Output current: 0.12A
Number of channels: 2
Operating voltage: 4.5...30V DC
Produkt ist nicht verfügbar
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DMG4413LSS-13 ds31754.pdf
DMG4413LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Pulsed drain current: -45A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74AHC1G00W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02620D3&compId=74AHC1G00.pdf?ci_sign=52e8df188cbc6aafe31b56e76eddfab03810bf75
74AHC1G00W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Produkt ist nicht verfügbar
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74AHC1G00SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02520D3&compId=74AHC1G00.pdf?ci_sign=0dbadd451621537d772998d719c1ec3a81e36664
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Produkt ist nicht verfügbar
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DMT2004UFV-7 DMT2004UFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMP2004UFG-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Gate charge: 83nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -180A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -20V
Drain current: -95A
On-state resistance: 7mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMP2004UFG-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Gate charge: 83nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -180A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -20V
Drain current: -95A
On-state resistance: 7mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMT2004UFDF-7 DMT2004UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: 24V
Drain current: 11.2A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMT2004UFG-7 DMT2004UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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BAS21Q-7-F Ds12004.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Produkt ist nicht verfügbar
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SBR10U45SP5-13 SBR10U45SP5.pdf
SBR10U45SP5-13
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
Technology: SBR®
auf Bestellung 2471 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
95+0.76 EUR
181+0.4 EUR
192+0.37 EUR
Mindestbestellmenge: 66
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ZXTP4003ZTA ZXTP4003Z.pdf
ZXTP4003ZTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT89
Current gain: 60...133
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
auf Bestellung 989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
185+0.39 EUR
307+0.23 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 143
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SMCJ18CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ18CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMCJ18CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ60CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ60CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ60CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AP2210N-2.5TRE1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Produkt ist nicht verfügbar
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AL5809-25P1-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B289DAE47426BE27&compId=AL5809-DTE.pdf?ci_sign=d0cfdabb918c811eac2ba2da19a1cc43c8739a51
AL5809-25P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 25mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 25mA
Operating voltage: 2.5...60V DC
Number of channels: 1
auf Bestellung 1002 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
149+0.48 EUR
217+0.33 EUR
230+0.31 EUR
Mindestbestellmenge: 122
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AL5809-15S1-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B289DAE47426BE27&compId=AL5809-DTE.pdf?ci_sign=d0cfdabb918c811eac2ba2da19a1cc43c8739a51
AL5809-15S1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15mA
Operating voltage: 2.5...60V DC
Number of channels: 1
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
203+0.35 EUR
216+0.33 EUR
239+0.3 EUR
250+0.29 EUR
500+0.27 EUR
Mindestbestellmenge: 203
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AL5809-90P1-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B289DAE47426BE27&compId=AL5809-DTE.pdf?ci_sign=d0cfdabb918c811eac2ba2da19a1cc43c8739a51
AL5809-90P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 90mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 90mA
Operating voltage: 2.5...60V DC
Number of channels: 1
auf Bestellung 508 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
143+0.5 EUR
150+0.48 EUR
200+0.36 EUR
211+0.34 EUR
Mindestbestellmenge: 99
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AL5809-25S1-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B289DAE47426BE27&compId=AL5809-DTE.pdf?ci_sign=d0cfdabb918c811eac2ba2da19a1cc43c8739a51
AL5809-25S1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 25mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Output current: 25mA
Operating voltage: 2.5...60V DC
Number of channels: 1
auf Bestellung 2454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
162+0.44 EUR
241+0.3 EUR
254+0.28 EUR
264+0.27 EUR
Mindestbestellmenge: 85
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