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AP1507-D5-13
+1
 		AP1507-D5-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA65B307171E28&compId=AP1507x-DTE.pdf?ci_sign=0e526be04fea4d506015f29cfd8c103a08d92e62 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A; SMD
Output voltage: 1.23...18V DC
Case: TO252-5
Frequency: 150kHz
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 4.5...22V DC
Efficiency: 74%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -20...85°C
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
59+1.23 EUR
148+0.48 EUR
157+0.46 EUR
Mindestbestellmenge: 47
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DFLS240L-7 DFLS240L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E75403E7FBC143&compId=DFLS240L.pdf?ci_sign=4d4aa0af18f85d6420295ea5489e36253b69080b Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Mounting: SMD
Capacitance: 90pF
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Power dissipation: 556mW
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
auf Bestellung 15177 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
182+0.39 EUR
363+0.2 EUR
385+0.19 EUR
3000+0.18 EUR
Mindestbestellmenge: 122
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ZLLS350TA ZLLS350TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EECE7691BF34143&compId=ZLLS350.pdf?ci_sign=1586333b18cc3912fa68f27f17aba8b35cc37469 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 40V; 0.38A; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.38A
Semiconductor structure: single diode
Max. forward impulse current: 1.3A
Kind of package: reel; tape
Power dissipation: 0.357W
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
168+0.43 EUR
211+0.34 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 120
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BSN20-7 BSN20-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F932E7357D0748&compId=BSN20.pdf?ci_sign=cf5651a055afec12770548153c4b376545ed43d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3597 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
298+0.24 EUR
360+0.2 EUR
556+0.13 EUR
690+0.1 EUR
977+0.073 EUR
999+0.072 EUR
1034+0.069 EUR
1073+0.067 EUR
Mindestbestellmenge: 209
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BSN20Q-7 BSN20Q-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F932E7357D0748&compId=BSN20.pdf?ci_sign=cf5651a055afec12770548153c4b376545ed43d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 415 Stücke:
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179+0.4 EUR
269+0.27 EUR
355+0.2 EUR
415+0.17 EUR
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ABS10B-13 DIODES INCORPORATED ABS10B.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Features of semiconductor devices: glass passivated
Case: SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Produkt ist nicht verfügbar
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ABS10M-13 DIODES INCORPORATED ABS10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4
Features of semiconductor devices: glass passivated
Case: SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 24A
Kind of package: reel; tape
Electrical mounting: SMT
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DMT64M2LPSW-13 DIODES INCORPORATED DMT64M2LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Mounting: SMD
Gate charge: 46.7nC
Drain-source voltage: 60V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.8W
Type of transistor: N-MOSFET
On-state resistance: 6.4mΩ
Drain current: 16.6A
Produkt ist nicht verfügbar
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DMT67M8LPSW-13 DIODES INCORPORATED DMT67M8LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W
Mounting: SMD
Gate charge: 37.5nC
Drain-source voltage: 60V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 320A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.8W
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Drain current: 13.8A
Produkt ist nicht verfügbar
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DMTH47M2LPSW-13 DIODES INCORPORATED DMTH47M2LPSW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W
Mounting: SMD
Gate charge: 12.6nC
Drain-source voltage: 40V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 292A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 3.8W
Type of transistor: N-MOSFET x2
On-state resistance: 12mΩ
Drain current: 51A
Produkt ist nicht verfügbar
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DMTH6012LPSW-13 DIODES INCORPORATED DMTH6012LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.1A; Idm: 200A; 2.8W
Mounting: SMD
Gate charge: 13.6nC
Drain-source voltage: 60V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.8W
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 8.1A
Produkt ist nicht verfügbar
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DMTH8028LPSW-13 DIODES INCORPORATED DMTH8028LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Gate charge: 10.4nC
Drain-source voltage: 80V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 166.8A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 3.9W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 29.5A
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DMT15H017LPSW-13 DIODES INCORPORATED DMT15H017LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.5A; Idm: 230A; 2.3W
Mounting: SMD
Gate charge: 50nC
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 230A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.3W
Type of transistor: N-MOSFET
On-state resistance: 25.5mΩ
Drain current: 7.5A
Produkt ist nicht verfügbar
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DMTH10H003SPSW-13 DIODES INCORPORATED DMTH10H003SPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 664A; 2.6W
Mounting: SMD
Gate charge: 85nC
Drain-source voltage: 100V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 664A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.6W
Type of transistor: N-MOSFET
On-state resistance: 5mΩ
Drain current: 117A
Produkt ist nicht verfügbar
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DMTH6002LPSW-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.57 EUR
Mindestbestellmenge: 2500
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DFLS2100-7 DIODES INCORPORATED DFLS2100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 36pF
Max. forward voltage: 0.86V
Leakage current: 1µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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DMP6050SFG-7 DIODES INCORPORATED DMP6050SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Pulsed drain current: -32A
Case: PowerDI®3333-8
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP6050SPS-13 DIODES INCORPORATED DMP6050SPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Pulsed drain current: -45A
Case: PowerDI5060-8
Drain-source voltage: -60V
Drain current: -4.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 30nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP6050SFG-13 DIODES INCORPORATED DMP6050SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.34 EUR
Mindestbestellmenge: 3000
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ZXTP2029FTA ZXTP2029FTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD948FE0375D1B80D3&compId=ZXTP2029F.pdf?ci_sign=da805549b075ea2c7f65befd3d784ba828bea927 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT23
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 5A
auf Bestellung 2259 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
83+0.86 EUR
173+0.41 EUR
183+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 52
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DSS5240T-7
+1
 		DSS5240T-7 DIODES INCORPORATED DSS5240T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 40V
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.73W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
auf Bestellung 1610 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
397+0.18 EUR
612+0.12 EUR
1005+0.071 EUR
1062+0.067 EUR
Mindestbestellmenge: 239
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DSS5160T-7 DIODES INCORPORATED DSS5160T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 725mW
Case: SOT23
Current gain: 100...200
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
auf Bestellung 2974 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
221+0.32 EUR
345+0.21 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 139
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KBJ406G KBJ406G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 64 Stücke:
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46+1.57 EUR
64+1.12 EUR
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GBJ2506-F GBJ2506-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB2E1F1154D63E0D6&compId=GBJ25_ser.pdf?ci_sign=92e996aa69040eb55685153c969914b7434799a7 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBJ
auf Bestellung 85 Stücke:
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31+2.36 EUR
56+1.29 EUR
80+0.9 EUR
84+0.86 EUR
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KBJ408G KBJ408G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
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KBP005G KBP005G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8E613AAA733D7&compId=KBP005G_ser.pdf?ci_sign=471abe1c817507136ba76f3ade949bcde4486439 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
auf Bestellung 28 Stücke:
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28+2.56 EUR
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KBP02G KBP02G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8E613AAA733D7&compId=KBP005G_ser.pdf?ci_sign=471abe1c817507136ba76f3ade949bcde4486439 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
auf Bestellung 237 Stücke:
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91+0.79 EUR
154+0.46 EUR
177+0.4 EUR
237+0.3 EUR
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1N4148WS-13-F DIODES INCORPORATED 1N4148WS_BAV16WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
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1N4148WSQ-13-F DIODES INCORPORATED 1N4148WS_BAV16WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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74AUP1G02FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C02DD2C40D3&compId=74AUP1G02.pdf?ci_sign=43b471a321375db651015c825545c9ea9aa183b6 Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1010-6
Number of inputs: 2
Produkt ist nicht verfügbar
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74AUP1G02FX4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A689B40D3&compId=74AUP1G02.pdf?ci_sign=0d2002c063407c97acb788a86888e16b872a653e Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1409-6
Number of inputs: 2
Produkt ist nicht verfügbar
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74AUP1G02FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A689C40D3&compId=74AUP1G02.pdf?ci_sign=9cf6335d47f597522ffe99a09894ad73552bc658 Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1410-6
Number of inputs: 2
Produkt ist nicht verfügbar
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74AUP1G02SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A689D40D3&compId=74AUP1G02.pdf?ci_sign=3c2f01b304eb5f74e5c17d12b992fafab9330504 Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: SOT353
Number of inputs: 2
Produkt ist nicht verfügbar
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SBR3060CTB-13 SBR3060CTB-13 DIODES INCORPORATED SBR3060CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 15Ax2; D2PAK; Ufmax: 0.56V; Ifsm: 200A
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 30A
Max. forward impulse current: 200A
Kind of package: reel; tape
Technology: SBR®
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.34 EUR
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FZT949TA FZT949TA DIODES INCORPORATED FZT949.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 639 Stücke:
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39+1.84 EUR
61+1.18 EUR
118+0.61 EUR
125+0.58 EUR
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SMAJ85A-13-F SMAJ85A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
319+0.22 EUR
562+0.13 EUR
834+0.086 EUR
878+0.082 EUR
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SMAJ85CA-13-F SMAJ85CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ8.0A-13-F SMBJ8.0A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
560+0.13 EUR
625+0.11 EUR
710+0.1 EUR
Mindestbestellmenge: 325
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SMBJ8.0CA-13-F SMBJ8.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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LM4040C30FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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LM4040C30QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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MMST2907A-7-F DIODES INCORPORATED ds30081.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMCJ12A-13-F SMCJ12A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AP2210N-3.0TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Mounting: SMD
Number of channels: 1
Case: SOT23
Output voltage: 3V
Output current: 0.3A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Input voltage: 2.5...13.2V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Tolerance: ±1%
Produkt ist nicht verfügbar
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DDZX30D-7 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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DMN32D2LDF-7 DMN32D2LDF-7 DIODES INCORPORATED ds31238.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Mounting: SMD
Semiconductor structure: common source
Case: SOT353
Power dissipation: 0.28W
Kind of package: 7 inch reel; tape
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Drain-source voltage: 30V
Drain current: 0.4A
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
311+0.23 EUR
472+0.15 EUR
807+0.089 EUR
863+0.083 EUR
Mindestbestellmenge: 157
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UMC5N-7 DIODES INCORPORATED ds31205.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT353
Power dissipation: 0.15W
Kind of package: reel; tape
Current gain: 30...68
Collector current: 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Kind of transistor: BRT; complementary pair
Base resistor: 47/4.7kΩ
Base-emitter resistor: 47/10kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
225+0.32 EUR
319+0.22 EUR
569+0.13 EUR
603+0.12 EUR
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D5V0L4B5S-7 D5V0L4B5S-7 DIODES INCORPORATED D5V0L4B5S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SC70,SOT353; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5V
Case: SC70; SOT353
Kind of package: reel; tape
Number of channels: 4
Capacitance: 20pF
Breakdown voltage: 6V
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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D1213A-02S-7 DIODES INCORPORATED D1213A-02S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SC70,SOT353; Ch: 2; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 3.3V
Case: SC70; SOT353
Kind of package: reel; tape
Number of channels: 2
Capacitance: 1.2pF
Breakdown voltage: 6V
Leakage current: 1µA
Produkt ist nicht verfügbar
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AL8400QSE-7 DIODES INCORPORATED AL8400.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT353; 0.3÷15mA; Ch: 1
Mounting: SMD
Case: SOT353
Output current: 0.3...15mA
Type of integrated circuit: driver
Number of channels: 1
Application: automotive industry
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Operating temperature: -40...125°C
Operating voltage: 0.2...18V DC
Produkt ist nicht verfügbar
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74AHCT1G14QSE-7 DIODES INCORPORATED 74AHCT1G14Q.pdf Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Technology: CMOS
Family: AHCT
Operating temperature: -40...150°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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SMBJ22CA-13-F SMBJ22CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
313+0.23 EUR
402+0.17 EUR
Mindestbestellmenge: 209
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SMBJ22CAQ-13-F DIODES INCORPORATED SMBJ6.5CAQ-SMBJ100CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ24CA-13-F SMCJ24CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
166+0.43 EUR
190+0.37 EUR
Mindestbestellmenge: 152
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SMCJ26CA-13-F SMCJ26CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2272 Stücke:
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76+0.94 EUR
117+0.61 EUR
128+0.56 EUR
305+0.23 EUR
321+0.22 EUR
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S1D-13-F S1D-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 3982 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
589+0.12 EUR
889+0.081 EUR
1866+0.038 EUR
1969+0.036 EUR
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S1DB-13-F S1DB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 1429 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
625+0.11 EUR
838+0.085 EUR
1194+0.06 EUR
1263+0.057 EUR
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US1D-13-F US1D-13-F DIODES INCORPORATED ds16008.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 2585 Stücke:
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250+0.29 EUR
353+0.2 EUR
410+0.17 EUR
439+0.16 EUR
848+0.084 EUR
893+0.08 EUR
Mindestbestellmenge: 250
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MMST3904Q-7-F DIODES INCORPORATED MMST3904.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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AP2125K-3.0TRG1 AP2125K-3.0TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.36A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.36V
Output voltage: 3V
Output current: 0.36A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...6V
Manufacturer series: AP2125
Produkt ist nicht verfügbar
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AP1507-D5-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA65B307171E28&compId=AP1507x-DTE.pdf?ci_sign=0e526be04fea4d506015f29cfd8c103a08d92e62
AP1507-D5-13
+1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A; SMD
Output voltage: 1.23...18V DC
Case: TO252-5
Frequency: 150kHz
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 4.5...22V DC
Efficiency: 74%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -20...85°C
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
59+1.23 EUR
148+0.48 EUR
157+0.46 EUR
Mindestbestellmenge: 47
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DFLS240L-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E75403E7FBC143&compId=DFLS240L.pdf?ci_sign=4d4aa0af18f85d6420295ea5489e36253b69080b
DFLS240L-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Mounting: SMD
Capacitance: 90pF
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Power dissipation: 556mW
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
auf Bestellung 15177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
182+0.39 EUR
363+0.2 EUR
385+0.19 EUR
3000+0.18 EUR
Mindestbestellmenge: 122
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ZLLS350TA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EECE7691BF34143&compId=ZLLS350.pdf?ci_sign=1586333b18cc3912fa68f27f17aba8b35cc37469
ZLLS350TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 40V; 0.38A; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.38A
Semiconductor structure: single diode
Max. forward impulse current: 1.3A
Kind of package: reel; tape
Power dissipation: 0.357W
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
168+0.43 EUR
211+0.34 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 120
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BSN20-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F932E7357D0748&compId=BSN20.pdf?ci_sign=cf5651a055afec12770548153c4b376545ed43d4
BSN20-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3597 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
298+0.24 EUR
360+0.2 EUR
556+0.13 EUR
690+0.1 EUR
977+0.073 EUR
999+0.072 EUR
1034+0.069 EUR
1073+0.067 EUR
Mindestbestellmenge: 209
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BSN20Q-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F932E7357D0748&compId=BSN20.pdf?ci_sign=cf5651a055afec12770548153c4b376545ed43d4
BSN20Q-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
269+0.27 EUR
355+0.2 EUR
415+0.17 EUR
Mindestbestellmenge: 179
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ABS10B-13 ABS10B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Features of semiconductor devices: glass passivated
Case: SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Produkt ist nicht verfügbar
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ABS10M-13 ABS10M.pdf
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4
Features of semiconductor devices: glass passivated
Case: SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 24A
Kind of package: reel; tape
Electrical mounting: SMT
Produkt ist nicht verfügbar
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DMT64M2LPSW-13 DMT64M2LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Mounting: SMD
Gate charge: 46.7nC
Drain-source voltage: 60V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.8W
Type of transistor: N-MOSFET
On-state resistance: 6.4mΩ
Drain current: 16.6A
Produkt ist nicht verfügbar
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DMT67M8LPSW-13 DMT67M8LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W
Mounting: SMD
Gate charge: 37.5nC
Drain-source voltage: 60V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 320A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.8W
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Drain current: 13.8A
Produkt ist nicht verfügbar
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DMTH47M2LPSW-13 DMTH47M2LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W
Mounting: SMD
Gate charge: 12.6nC
Drain-source voltage: 40V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 292A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 3.8W
Type of transistor: N-MOSFET x2
On-state resistance: 12mΩ
Drain current: 51A
Produkt ist nicht verfügbar
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DMTH6012LPSW-13 DMTH6012LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.1A; Idm: 200A; 2.8W
Mounting: SMD
Gate charge: 13.6nC
Drain-source voltage: 60V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.8W
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 8.1A
Produkt ist nicht verfügbar
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DMTH8028LPSW-13 DMTH8028LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Gate charge: 10.4nC
Drain-source voltage: 80V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 166.8A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 3.9W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 29.5A
Produkt ist nicht verfügbar
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DMT15H017LPSW-13 DMT15H017LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.5A; Idm: 230A; 2.3W
Mounting: SMD
Gate charge: 50nC
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 230A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.3W
Type of transistor: N-MOSFET
On-state resistance: 25.5mΩ
Drain current: 7.5A
Produkt ist nicht verfügbar
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DMTH10H003SPSW-13 DMTH10H003SPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 664A; 2.6W
Mounting: SMD
Gate charge: 85nC
Drain-source voltage: 100V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 664A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.6W
Type of transistor: N-MOSFET
On-state resistance: 5mΩ
Drain current: 117A
Produkt ist nicht verfügbar
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DMTH6002LPSW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.57 EUR
Mindestbestellmenge: 2500
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DFLS2100-7 DFLS2100.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 36pF
Max. forward voltage: 0.86V
Leakage current: 1µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMP6050SFG-7 DMP6050SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Pulsed drain current: -32A
Case: PowerDI®3333-8
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP6050SPS-13 DMP6050SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Pulsed drain current: -45A
Case: PowerDI5060-8
Drain-source voltage: -60V
Drain current: -4.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 30nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMP6050SFG-13 DMP6050SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.34 EUR
Mindestbestellmenge: 3000
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ZXTP2029FTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD948FE0375D1B80D3&compId=ZXTP2029F.pdf?ci_sign=da805549b075ea2c7f65befd3d784ba828bea927
ZXTP2029FTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT23
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 5A
auf Bestellung 2259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
83+0.86 EUR
173+0.41 EUR
183+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 52
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DSS5240T-7 DSS5240T.pdf
DSS5240T-7
+1
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 40V
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.73W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
auf Bestellung 1610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
397+0.18 EUR
612+0.12 EUR
1005+0.071 EUR
1062+0.067 EUR
Mindestbestellmenge: 239
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DSS5160T-7 DSS5160T.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 725mW
Case: SOT23
Current gain: 100...200
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
auf Bestellung 2974 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
221+0.32 EUR
345+0.21 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 139
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KBJ406G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ406G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
64+1.12 EUR
Mindestbestellmenge: 46
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GBJ2506-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB2E1F1154D63E0D6&compId=GBJ25_ser.pdf?ci_sign=92e996aa69040eb55685153c969914b7434799a7
GBJ2506-F
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBJ
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
56+1.29 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 31
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KBJ408G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ408G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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KBP005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8E613AAA733D7&compId=KBP005G_ser.pdf?ci_sign=471abe1c817507136ba76f3ade949bcde4486439
KBP005G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
Mindestbestellmenge: 28
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KBP02G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8E613AAA733D7&compId=KBP005G_ser.pdf?ci_sign=471abe1c817507136ba76f3ade949bcde4486439
KBP02G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
154+0.46 EUR
177+0.4 EUR
237+0.3 EUR
Mindestbestellmenge: 91
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1N4148WS-13-F 1N4148WS_BAV16WS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Produkt ist nicht verfügbar
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1N4148WSQ-13-F 1N4148WS_BAV16WS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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74AUP1G02FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C02DD2C40D3&compId=74AUP1G02.pdf?ci_sign=43b471a321375db651015c825545c9ea9aa183b6
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1010-6
Number of inputs: 2
Produkt ist nicht verfügbar
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74AUP1G02FX4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A689B40D3&compId=74AUP1G02.pdf?ci_sign=0d2002c063407c97acb788a86888e16b872a653e
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1409-6
Number of inputs: 2
Produkt ist nicht verfügbar
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74AUP1G02FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A689C40D3&compId=74AUP1G02.pdf?ci_sign=9cf6335d47f597522ffe99a09894ad73552bc658
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1410-6
Number of inputs: 2
Produkt ist nicht verfügbar
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74AUP1G02SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A689D40D3&compId=74AUP1G02.pdf?ci_sign=3c2f01b304eb5f74e5c17d12b992fafab9330504
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: SOT353
Number of inputs: 2
Produkt ist nicht verfügbar
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SBR3060CTB-13 SBR3060CTB.pdf
SBR3060CTB-13
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 15Ax2; D2PAK; Ufmax: 0.56V; Ifsm: 200A
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 30A
Max. forward impulse current: 200A
Kind of package: reel; tape
Technology: SBR®
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.34 EUR
Mindestbestellmenge: 53
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FZT949TA FZT949.pdf
FZT949TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
61+1.18 EUR
118+0.61 EUR
125+0.58 EUR
Mindestbestellmenge: 39
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SMAJ85A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ85A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
319+0.22 EUR
562+0.13 EUR
834+0.086 EUR
878+0.082 EUR
Mindestbestellmenge: 209
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SMAJ85CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ85CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ8.0A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ8.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
325+0.22 EUR
560+0.13 EUR
625+0.11 EUR
710+0.1 EUR
Mindestbestellmenge: 325
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SMBJ8.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ8.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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LM4040C30FTA LM4040.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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LM4040C30QFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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MMST2907A-7-F ds30081.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMCJ12A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ12A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AP2210N-3.0TRE1 AP2210.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Mounting: SMD
Number of channels: 1
Case: SOT23
Output voltage: 3V
Output current: 0.3A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Input voltage: 2.5...13.2V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Tolerance: ±1%
Produkt ist nicht verfügbar
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DDZX30D-7 ds30408.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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DMN32D2LDF-7 ds31238.pdf
DMN32D2LDF-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Mounting: SMD
Semiconductor structure: common source
Case: SOT353
Power dissipation: 0.28W
Kind of package: 7 inch reel; tape
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Drain-source voltage: 30V
Drain current: 0.4A
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
311+0.23 EUR
472+0.15 EUR
807+0.089 EUR
863+0.083 EUR
Mindestbestellmenge: 157
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UMC5N-7 ds31205.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT353
Power dissipation: 0.15W
Kind of package: reel; tape
Current gain: 30...68
Collector current: 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Kind of transistor: BRT; complementary pair
Base resistor: 47/4.7kΩ
Base-emitter resistor: 47/10kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
225+0.32 EUR
319+0.22 EUR
569+0.13 EUR
603+0.12 EUR
Mindestbestellmenge: 139
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D5V0L4B5S-7 D5V0L4B5S.pdf
D5V0L4B5S-7
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SC70,SOT353; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5V
Case: SC70; SOT353
Kind of package: reel; tape
Number of channels: 4
Capacitance: 20pF
Breakdown voltage: 6V
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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D1213A-02S-7 D1213A-02S.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SC70,SOT353; Ch: 2; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 3.3V
Case: SC70; SOT353
Kind of package: reel; tape
Number of channels: 2
Capacitance: 1.2pF
Breakdown voltage: 6V
Leakage current: 1µA
Produkt ist nicht verfügbar
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AL8400QSE-7 AL8400.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT353; 0.3÷15mA; Ch: 1
Mounting: SMD
Case: SOT353
Output current: 0.3...15mA
Type of integrated circuit: driver
Number of channels: 1
Application: automotive industry
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Operating temperature: -40...125°C
Operating voltage: 0.2...18V DC
Produkt ist nicht verfügbar
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74AHCT1G14QSE-7 74AHCT1G14Q.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Technology: CMOS
Family: AHCT
Operating temperature: -40...150°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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SMBJ22CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ22CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
313+0.23 EUR
402+0.17 EUR
Mindestbestellmenge: 209
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SMBJ22CAQ-13-F SMBJ6.5CAQ-SMBJ100CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ24CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ24CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
166+0.43 EUR
190+0.37 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ26CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ26CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
117+0.61 EUR
128+0.56 EUR
305+0.23 EUR
321+0.22 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
S1D-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1D-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 3982 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
589+0.12 EUR
889+0.081 EUR
1866+0.038 EUR
1969+0.036 EUR
Mindestbestellmenge: 455
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S1DB-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 1429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
625+0.11 EUR
838+0.085 EUR
1194+0.06 EUR
1263+0.057 EUR
Mindestbestellmenge: 455
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US1D-13-F ds16008.pdf
US1D-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 2585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
353+0.2 EUR
410+0.17 EUR
439+0.16 EUR
848+0.084 EUR
893+0.08 EUR
Mindestbestellmenge: 250
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MMST3904Q-7-F MMST3904.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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AP2125K-3.0TRG1 AP2125.pdf
AP2125K-3.0TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.36A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.36V
Output voltage: 3V
Output current: 0.36A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...6V
Manufacturer series: AP2125
Produkt ist nicht verfügbar
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